JP2000101017A - Contact structure of lead end extended on surface of insulating layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the contact structure of the end of the lead extending or the surface of an insulating layer which can give the lead end proper elasticity while achieving the miniaturization of the lead and the contact part made at the lead end and the pitch reduction, and can effectively check the elongation by heat. SOLUTION: For the contact structure of a lead terminal, a contact part 4 is made at the end of the lead end extending on the surface of an insulating layer, and the contact part 4 is used as a pressurizing and contact means to another electronic component 5. In this case, the structure is provided with a hole 6 in the section of the insulating layer 1 right below the lead end 3, and the hole 6 is charged with an elastic material 7, and the lead end 3, that is, the contact part 4 is backed up with the elastic material 7 filled in the hole 6, thus extending the lead end on the surface of the insulating layer which gives elasticity at the time of pressurization and contact.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead end pressure contact structure extending on the surface of an insulating layer.

[0002]

2. Description of the Related Art In Japanese Patent Application No. 9-51951, in FIGS. 2 and 3, an insulating layer is formed of a base material lacking elasticity such as polyimide resin, and a lead end extending on the surface of the insulating layer is formed. A bump is formed by projecting outward, and a recess formed on the inner surface side of the bump is filled with a part of the insulating layer to reinforce the bump-shaped contact portion, and is pressed against another electronic component. A contact structure of a lead end to be brought into contact is disclosed.

However, this contact structure is effective as a means for imparting strength and rigidity to the bump, but conversely impairs the elasticity, and the elasticity required when the above-mentioned bump-shaped contact portion is brought into pressure contact with another electronic component. It has the problem of lacking contact force.

It is conceivable that the insulating layer in this conventional example is formed of rubber or the like having elasticity to obtain the elastic contact force of the bump type contact portion. However, if the insulating layer is formed of rubber or the like,
Excessive expansion and contraction due to thermal expansion not only causes a problem that it is difficult to maintain the accuracy of the contact portion, but also causes a fatal problem that it is difficult to form a wiring pattern by plating or the like and to connect the wiring pattern between layers in a rubber insulating layer.

[0005]

SUMMARY OF THE INVENTION Accordingly, the present invention provides a lead end extending on the surface of an insulating layer, which can provide an appropriate elastic contact force while reinforcing the lead end and can also suppress expansion and contraction due to thermal expansion. To provide a contact structure.

Therefore, an appropriate contact pressure between the bump and another electronic component is obtained to ensure contact reliability.

[0007]

According to a contact structure of a lead end according to the present invention, a contact portion is formed at a lead end extending on the surface of the insulating layer, and the contact portion is pressed against another electronic component. In the contact structure of the lead end used as a means, a hole is provided in the insulating layer portion immediately below the lead end, and the hole is filled with an elastic material such as silicon rubber or urethane rubber. A contact structure of a lead end is provided which is backed up by an elastic material filled in the lead and imparts elasticity at the time of the above-mentioned pressure contact.

While selecting a resin having high rigidity suitable for forming a wiring pattern as the insulating layer, a suitable elastic contact force can be applied to the lead end by the elastic material filled in the hole, and the elasticity can be increased by the inner wall of the hole. Expansion and contraction due to thermal expansion of the material can be effectively prevented.

The insulating layer is attached to a rigid plate having a smaller coefficient of thermal expansion than the insulating layer, thereby suppressing expansion and contraction of the insulating layer due to thermal expansion.

The above-mentioned insulating layer is formed on a semiconductor wafer to form a contact conversion structure of the semiconductor wafer. The present invention can impart appropriate elasticity to the lead end while achieving finer and finer pitch of the contact portion formed on the lead and the lead end,
Further, elongation due to heat can be effectively prevented, and the contact conversion structure of the semiconductor wafer can be appropriately implemented.

[0011] The contact portion is formed by a bump formed by forming a lead end outward in a mountain shape. Or, a bump is formed by raising a conductive paste on the outer surface of the lead end,
The bumps serve as the contact portions.

[0012] The lead end forming the contact portion is cantilevered by the wall defining the hole, thereby enhancing elasticity. Alternatively, the lead end forming the contact portion is supported on both sides of the hole forming wall, and the elasticity is imparted to a portion of the lead end supported and supported across the hole.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail with reference to FIGS.

A large number of leads 2 formed by plating or the like adhere to and extend on the surface of the insulating layer 1, and a contact portion 4 is formed at the lead end 3, and the contact portion 4 is connected to another wiring circuit for inspection. It serves as a pressure contact means for the electronic component 5 such as a substrate.

A large number of holes 6 are provided in the insulating layer 1, the holes 6 are arranged immediately below the lead ends 3, and the holes 6 are filled with an elastic material 7 such as silicon rubber or urethane rubber. The end 3, that is, the contact portion 4, is backed up by the elastic material 7 filled in the hole 6, and elasticity at the time of press contact with the electronic component 5 is provided.

As shown in FIGS. 1 and 3, the hole 6 is formed by a through-hole opened on the opposing surface of the insulating layer 1, and the through-hole is filled with the elastic material 7, and the lead end 3 is formed. To back up.

As shown in FIGS. 6 and 7, the hole 6 is formed as a bottomed hole opened on the outer surface of the insulating layer 1,
The elastic material 7 is filled in the bottomed hole to back up the lead end 3.

Further, as shown in FIG. 5, the elastic material filling hole 6 is formed by a groove capable of containing a plurality of lead ends 3, or is formed by a round hole independent of each lead end 3.

As shown in FIG. 3, while forming an elastic layer 8 by applying an elastic material 7 such as rubber to the inner surface of the insulating layer 1, a part of the elastic layer 8 is filled in the hole 6. A backup structure for the lead end 3 is formed. Therefore, the elastic members 7 in each hole 6 are interconnected by the elastic layer 8. Alternatively, as shown in FIG. 1, each hole 6 is filled with an elastic material 7 without forming the elastic layer 8.

As the insulating layer 1, a resin having high rigidity suitable for forming a wiring pattern can be selected. On the other hand, as the elastic material 7 filled in the hole 6, a rubber or the like which gives the lead end 3 an appropriate elastic contact force can be selected. Thus, expansion and contraction due to thermal expansion of the elastic member 7 can be effectively prevented by the inner wall of the hole 6.

As the insulating layer 1, a liquid crystal polymer having excellent hygroscopicity and dielectric constant is suitable. This liquid crystal polymer has excellent self-adhesiveness and can be firmly layered on the rigid plate 9 or the semiconductor wafer 10 without using an adhesive.

The contact portion 4 is, as shown in FIGS.
The lead base material of the lead end 3 is formed by a bump 4 ′ formed outwardly in a mountain shape.

Alternatively, as shown in FIG. 3 and FIG. 4, a bump 4 ″ is formed by raising a conductive paste on the outer surface of the lead end 3, and the bump 4 ″ is used as the contact portion 4.

As shown in FIGS. 1 and 3, the insulating layer 1 has a surface opposite to the side on which the pressure contact portion 4 is formed, and is formed on a rigid plate 9 having a smaller thermal expansion coefficient than the insulating layer 1. To prevent expansion and contraction of the insulating layer 1 due to thermal expansion. Typical examples of the rigid plate 9 include quartz glass and ceramic.

Alternatively, the insulating layer 1 is layered on a semiconductor wafer 10 on which a large number of IC chips are formed with a surface opposite to the surface on which the pressure contact portion 4 is formed.
Is formed.

In laminating the insulating layer 1 on the rigid plate 9 or the semiconductor wafer 10, a plurality of wiring circuit layers 11 can be interposed between the rigid plate 9 and the semiconductor wafer 10 and the insulating layer 1.

On the outer surface of the insulating layer 1, a lead 2 having a press contact portion 4 for another electronic component 5 is formed, and the insulating layer 1 is in close contact with the inner surface opposite to the side on which the press contact portion 4 is formed. The wiring pattern 1
The lead 2 and the lead 2 are electrically connected to each other via a connection portion 13 penetrating the insulating layer 1.

The lead 2 is electrically connected to the wiring pattern of the wiring circuit layer 11 via the wiring pattern 12.
The external contact of the semiconductor wafer 10 is connected to the wiring pattern 12 via the wiring pattern of the wiring circuit layer 11 and to the lead 2.

The present invention achieves miniaturization and fine pitch of the contact portion 4 formed on the lead 2 and the lead end 3,
Appropriate elasticity can be imparted to the lead end 3 and elongation due to heat can be effectively prevented, so that it can be properly implemented as a contact conversion structure of a semiconductor wafer.

As shown in FIGS. 1 to 3, the contact portion 4
Are cantilevered to the wall defining the hole 6. The lead end 3, that is, the contact portion 4 can be satisfactorily elastically displaced around the cantilever support portion as a fulcrum.

Alternatively, the lead end 3 forming the contact portion 4 is supported on both sides of the defining wall of the hole 6. The lead end 3 supported at both ends can be elastically displaced in a portion crossing the hole 6.

Preferably, as shown in FIG. 2 or FIG. 4, the inner surface of the lead end 3 is integrally connected with an elastic material 7 filled in the hole 6. At this time, a flange portion 14 extending from the base of the bump is formed around the bumps 4 ′ and 4 ″ formed on the lead end 3, and the flange portion 14 is embedded in the elastic material 7, and Be one.

Next, as shown in FIGS. 6 and 7, a plurality of unit rigid plates made of quartz glass or ceramic are laminated to form a rigid plate 1 ', and the rigid plates 1' of each layer are formed.
A wiring pattern 15 is formed on the surface of the
5 can be connected to the lead end 3 having the contact portion 4.

[0034]

According to the present invention, it is possible to select a resin having high rigidity suitable for forming a wiring pattern as an insulating layer and to give an appropriate elastic contact force to a lead end by an elastic material filled in a hole. In addition, expansion and contraction due to thermal expansion of the elastic material can be effectively prevented by the inner wall of the hole.

The insulating layer is attached to a rigid plate having a smaller coefficient of thermal expansion than the insulating layer, so that expansion and contraction due to thermal expansion of the insulating layer can be suppressed well.

Further, according to the present invention, a suitable elasticity can be imparted to the lead end while achieving finer and finer pitch of the contact formed on the lead and the lead end, and elongation due to heat can be effectively prevented. It can be appropriately implemented as a contact conversion structure of a semiconductor wafer.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example in which a lead end extending on the surface of an insulating layer according to the present invention has a cantilever support structure, and the lead end is backed up by an elastic material filled in a through hole to form a contact structure. .

FIG. 2 is an enlarged sectional view showing a contact structure at a lead end in FIG. 1;

FIG. 3 is a cross-sectional view showing another example in which the lead end extending to the surface of the insulating layer according to the present invention has a cantilever support structure, and the lead end is backed up by an elastic material filled in a through hole to form a contact structure. FIG.

FIG. 4 is an enlarged sectional view showing a contact structure at a lead end in FIG. 3;

FIG. 5 is a plan view of a contact structure at a lead end in FIGS. 1 to 4;

FIG. 6 is a cross-sectional view showing a contact structure in which a lead end extending to the surface of an insulating layer forming a multilayer wiring layer has a cantilever structure, and the lead end is backed up by an elastic material filled in a bottomed hole.

FIG. 7 is a cross-sectional view showing a contact structure in which a lead end extending to the surface of an insulating layer forming a multilayer wiring layer has a double-ended structure, and the lead end is backed up by an elastic material filled in a bottomed hole.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 insulating layer 1 ′ rigid plate 2 lead 3 lead end 4 contact portion 4 ′, 4 ″ bump 5 electronic component 6 hole 7 elastic material 8 elastic layer 9 rigid plate 10 semiconductor wafer 11 wiring circuit layer 12 wiring pattern 13 connection portion 14 flange Part 15 Wiring pattern

Claims (7)

[Claims] In a lead end contact structure in which a contact portion is formed at a lead end extending on a surface of an insulating layer and the contact portion is used as a pressurizing contact means for another electronic component, the insulation just below the lead end is provided. A hole is provided in the layer portion, an elastic material is filled in the hole, and the lead end, that is, the contact portion is backed up by the elastic material filled in the hole to provide elasticity at the time of the above pressure contact. A lead end contact structure extending on an insulating layer surface. 2. A lead end contact structure extending on the surface of an insulating layer according to claim 1, wherein said insulating layer is laminated on a rigid plate having a smaller thermal expansion coefficient than said insulating layer. 3. The contact structure according to claim 1, wherein said insulating layer is layered on a semiconductor wafer. 4. The lead extending to the surface of the insulating layer according to claim 1, wherein the end of the lead is formed outwardly in a mountain shape to form a bump, and the bump serves as the contact portion. Edge contact structure. 5. The lead end extending to the surface of the insulating layer according to claim 1, wherein a conductive paste is raised on the outer surface of the lead end to form a bump, and the bump is used as the contact portion. Contact structure. 6. The lead extending to the surface of the insulating layer according to claim 1, wherein a lead end forming the contact portion is cantilevered by a hole forming wall. Edge contact structure. 7. The lead extending to the surface of the insulating layer according to claim 1, wherein the lead end forming the contact portion is supported at both sides by a hole forming wall. Edge contact structure.