JP2000100788A - Resist solution and formation of pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a method for forming a pattern, which surely forms a pattern having a stencil shape by a simple method, without being effected due to exposure systems, a high-step substrate, or a resist solution, which is used for the method. SOLUTION: A first resist solution formed by a method, wherein a sensitizer within a resist solution is previously made to be decomposed with light irradiation, and the sensitiaer is turned into an indene ketene to put the indene ketene in a soluble state to alkali, is applied on a substrate 1 as a resist film 11, a second resist solution is applied on the film 11 as a resist film 12, ultraviolet rays are irradiated on the film 12 via a mask 3, and the films 11 and 12 are developed with an alkaline developing solution so as to form a pattern having a stencil shape 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a resist solution and a pattern forming method used in a process for producing an electronic device or an optical device.

[0002]

2. Description of the Related Art As a method of forming a metal film on a substrate such as a semiconductor, there is a lift-off method using a resist having a stencil shape. The `` lift-off method '' is a method in which a metal is evaporated on a substrate using a diagrammatic resist film formed on the substrate as a mask, the resist film is dissolved in a solvent, and the resist film and the metal deposited on the resist film are dissolved. It means a method of removing from the substrate and leaving a metal film of a figure shape on the substrate. The “stencil shape” is the shape of the opening of the resist film, and is characterized in that the periphery of the opening protrudes like an eave. This stencil shape forms a portion where metal is not deposited on the resist wall surface of the opening, and enables removal of the resist film by a solvent, that is, a lift-off process.

The lift-off method includes a method using a single-layer resist and a method using a two-layer resist.

In an optical device process such as a semiconductor laser, it is necessary to form a thick metal film on a semiconductor substrate. In such a case, a lift-off method is more effective than an etching method for a metal film. The single-layer resist method has a simple process, but has little overhang of the eaves, and the stencil shape differs greatly depending on the exposure method such as contact exposure or reduction projection exposure. In addition, there is often a problem that an unnecessary portion of the metal film remains on the substrate when the lift-off process is performed. On the other hand, the two-layer resist method is an effective method for removing an unnecessary portion of the metal film without being affected by the difference in the exposure method.

FIG. 2 shows an example of a basic stencil forming method using a single-layer resist by a contact exposure method. (A)
A resist film 2 is formed on a semiconductor substrate 1 and exposed to ultraviolet light 4 through a photomask 3 for exposure. (B) dipping in an organic solvent (such as bromobenzene and monochlorobenzene) to form a hardly soluble layer 5 on the surface of the resist film 2; (C) A stencil shape 6 is formed by performing a developing process. This method is simple in process, but in the contact exposure method, if the adhesion between the resist and the photomask is poor, even if the stencil shape 6 can be formed, the width of the opening is limited to the substrate 1.
In this case, a metal is vapor-deposited on the resist at the interface and the metal film at that portion remains on the substrate during the lift-off process.

FIG. 3 shows an example of a basic stencil forming method using a two-layer resist method which solves this problem.
(A) PMG as a lower resist film 7 on a semiconductor substrate 1
I (poly (dimethylglutarimide))
Heat treatment at ℃ or more. (B) Apply an upper resist film 8 (photoresist) on the PMGI film 7 and
After pre-baking at a temperature of about 10 ° C., pattern exposure is performed by ultraviolet rays 4 through a photomask 3.
(C) After the upper resist film 8 is developed, exposure with far ultraviolet rays 9 is performed using the upper resist film 8 as a photomask.
(D) The stencil shape 6 can be formed by developing the lower resist film 7 using a solution in which the upper resist film 8 is not developed. (E) If a metal film is deposited on the entire surface and the two resist films are removed, the metal film 10 is formed only on necessary portions of the semiconductor substrate 1.
Can be formed.

In FIG. 3, the PMGI film is used as the lower resist film. However, a heat treatment at a high temperature of 200 ° C. or more is required, and the lower resist film cannot be easily dissolved by an organic solvent such as acetone in the lift-off process. , Was developed to solve these problems,
This is a two-layer resist method shown in FIG. 4 (see Japanese Patent Application No. 10-7523). Here, (a) the lower resist film 11 (photoresist) is applied, and heat treatment (120 ° C. to 130 ° C.) is performed to irradiate the entire surface of the lower resist film 11 with sufficient ultraviolet rays 4. (B) The upper resist film 12 is applied and heat treated (90
(° C. to 110 ° C.), and then pattern exposure with ultraviolet light 4 is performed via the photomask 3. (C) In the developing process, (a)
Resist film 11 sufficiently irradiated with ultraviolet light
Has a high developing speed, and the development is accelerated.
Is formed.

[0008]

The basic two-layer resist method disclosed in Japanese Patent Application No. 10-7523, which has been previously filed, includes a lower resist film on a semiconductor substrate 1. After the formation of 11, heat treatment or whole-surface exposure treatment with ultraviolet light 4 is performed, so that two heat treatment steps and two exposure steps are required before stencil formation, and the problem to be solved is that the process becomes complicated. is there.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and the process can be shortened, a stencil shape can be surely formed without being affected by an exposure method or a high-step substrate, and a lift-off process can be performed. It is an object of the present invention to provide a pattern forming method capable of easily performing the above.

[0010]

In order to solve the above-mentioned problems, according to the present invention, the lower resist film 11 is formed in advance.
UV light 4 is irradiated at the stage of the resist solution to be used to decompose the photosensitizer (naphthoquinonediazide) in the resist,
In this method, indene ketene having the effect of increasing the dissolution rate of the resist is used, and the resist is stored in this state. As a result, since the resist has been exposed in advance, the upper resist film 12 can be applied as it is without the need for a heat treatment step after forming the lower resist film 11 on the semiconductor substrate 1 or a whole-surface exposure step with the ultraviolet light 4. Also, in the development process performed after the pattern formation exposure, the dissolution rate of the lower resist film 11 is increased, and a good stencil shape can be formed.

In the conventional method shown in FIG. 4, it is necessary to irradiate the lower resist film 11 with ultraviolet rays to increase the alkali solubility of the resist. Need quantity. On the other hand, in the present invention, since the lower resist film 11 is already in the state after the irradiation of the ultraviolet rays, there is no problem even if the resist film 11 is thick. Also, the formation of the metal film can be easily performed.

[0012]

FIG. 1 shows an embodiment of a pattern forming method according to the present invention. In FIG. 1, (a) a commercially available resist solution (eg, Shipley S183)
In step 0), a resist which is made sufficiently soluble by absorbing ultraviolet rays to decompose a photosensitizer to make indene ketene into an alkali-soluble state is prepared, and is applied as a lower resist film 11 on the semiconductor substrate 1 by a spin coater. (B) The upper resist film 12 (for example, SJR5 manufactured by Shipley Co.)
440) by a spin coater and heat treatment (90 ° C.)
After that, pattern exposure is performed using ultraviolet light 4 through the photomask 3. (C) The stencil shape 6 can be formed by developing the upper resist film 12 and the lower resist film 11 in a single step using an alkaline developer (for example, MP Developer: MP Developer).

According to the present invention, the exposure step is omitted because a resist solution which has already been decomposed in the resist solution before being applied onto the semiconductor substrate 1 is used. Further, since the upper resist film 12 is formed thick so as to be able to cope with a large substrate step, and furthermore, a material having a different absorption characteristic with respect to the light wavelength from the lower resist film 11 is used. The difference increases, and a good stencil shape can be formed.

In the above description, the case where a semiconductor substrate is used as a substrate has been described, but it goes without saying that the present invention can be applied to substrates other than semiconductors. In addition, in addition to ultraviolet light, visible light, for example, g-ray (wavelength 436 nm) from a mercury lamp or the like can be used for light irradiation to decompose the photosensitizer in the resist solution into indenketene.

[0015]

According to the present invention, a stencil shape suitable for the lift-off method can be reliably formed by a simple method, and the stencil shape can be used to form a thick metal film or a high step on a substrate. In such a case, the metal film can be easily formed.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing an embodiment according to the present invention.

FIG. 2 is a conceptual diagram showing a conventional single-layer resist method.

FIG. 3 is a conceptual diagram showing a conventional two-layer resist method.

FIG. 4 is a conceptual diagram showing a conventional two-layer resist method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate 2 ... Resist film 3 ... Photo mask 4 ... Ultraviolet light 5 ... Refractory layer 6 ... Stencil shape 7 ... Lower resist film 8 ... Upper resist film 9 ... Far ultraviolet light 10 ... Metal film 11 ... Lower resist film 12 ... Upper layer Resist film

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Isamu Odaka 20-1, Sakuragaoka-cho, Shibuya-ku, Tokyo Inside NTT Electronics Corporation (72) Inventor Kunihiko Onike 20-1 Sakuragaoka-cho, Shibuya-ku, Tokyo NTT Electronics F term in the company (reference) 5F004 AA16 DB08 EA17 5F046 AA20 JA04 JA22 KA01 LA12 NA05

Claims (2)

[Claims] 1. A resist solution characterized in that a photosensitizer in the resist solution is decomposed by light irradiation to make indenketene into an alkali-soluble state. 2. A pattern forming method for forming a stencil shape on a substrate by using a two-layer resist, wherein a photosensitive agent in a resist solution is previously decomposed by light irradiation to make indene ketene into an alkali-soluble state. Applying a solution on the substrate to form a first resist film; applying a second resist solution on the first resist film to form a second resist film; 2. A pattern forming method, comprising the steps of: transferring a pattern by exposure to a second resist film; and developing the first and second resist films with an alkaline developer.