JP2000093955A5 - - Google Patents
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- JP2000093955A5 JP2000093955A5 JP1998265581A JP26558198A JP2000093955A5 JP 2000093955 A5 JP2000093955 A5 JP 2000093955A5 JP 1998265581 A JP1998265581 A JP 1998265581A JP 26558198 A JP26558198 A JP 26558198A JP 2000093955 A5 JP2000093955 A5 JP 2000093955A5
- Authority
- JP
- Japan
- Prior art keywords
- taah
- waste
- abbreviated
- solution
- waste water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002699 waste material Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 239000002351 wastewater Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
Description
【0003】
上記アルカリ現像液としては、通常、水酸化テトラアルキルアンモニウム(テトラアルキルアンモニウムヒドロオキシドで、以下、時に「TAAH」と略す)の水溶液が用いられる。従って、TAAH水溶液をアルカリ現像液として用いる現像工程から排出される廃液(「フォトレジスト現像廃液」と言い、時に「現像廃液」と略称する)には、通常、溶解したフォトレジストとTAAHが含有されている。但し、一般に、廃液(廃水)が工場によって異なってくるものであり、何が混入してくるか分からず、また、場合によっては他の廃水と混合されることがあり得るので、TAAHの水酸化物イオンの少量が他種の陰イオンに置換されてテトラアルキルアンモニウム(以下、時に「TAA」と略す)の塩となっていることもあり得るが、このような現像廃液がTAAHを含むことには変わりがない。[0003]
As the alkali developer, an aqueous solution of tetraalkylammonium hydroxide (hereinafter, sometimes abbreviated as "TAAH" for tetraalkylammonium hydroxide) is used. Therefore, the waste solution (referred to as "photoresist development waste solution" and sometimes abbreviated as "development waste solution") discharged from the development step using an aqueous solution of TAAH as an alkaline developer usually contains dissolved photoresist and TAAH. ing. However, in general, the waste water (waste water) differs depending on the factory, and it is not possible to know what will be mixed in, and in some cases, it may be mixed with other waste water, so things small amount is replaced with other types of anionic Te preparative La alkyl ammonium ion (hereinafter, sometimes abbreviated as "TAA") but may also have a salt, such waste developer contains TAAH There is no change in things.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10265581A JP2000093955A (en) | 1998-09-21 | 1998-09-21 | Method for treating spent photoresist developer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10265581A JP2000093955A (en) | 1998-09-21 | 1998-09-21 | Method for treating spent photoresist developer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000093955A JP2000093955A (en) | 2000-04-04 |
JP2000093955A5 true JP2000093955A5 (en) | 2004-07-08 |
Family
ID=17419119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10265581A Pending JP2000093955A (en) | 1998-09-21 | 1998-09-21 | Method for treating spent photoresist developer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000093955A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6217743B1 (en) * | 1997-02-12 | 2001-04-17 | Sachem, Inc. | Process for recovering organic hydroxides from waste solutions |
KR101199963B1 (en) | 2010-05-11 | 2012-11-12 | 주식회사 지에이티 | Method for purifying waste of aqueous rework chemical for lcd panel and reusing the purified rework chemical |
-
1998
- 1998-09-21 JP JP10265581A patent/JP2000093955A/en active Pending
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