JP2000091300A - Washing/drying treatment method of wafer and treatment device thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method which controls sticking particles to a wafer surface, dries a wafer surface rapidly without especially heating the wafer and uses only a little amount of organic solvent for drying when the wafer is washed with pure water and its surface is dried. SOLUTION: Rising water flow is formed by supplying pure water into a washing tank 12, pure water is made to overflow from an overflow part of an upper part thereof, a wafer is immersed and washed in pure water in a washing tank, the wafer is pulled up from pure water after washing, and vapor of water soluble organic solvent with a function to lower surface tension of pure water to the wafer is supplied to a circumference of the wafer together with inert gas while the wafer is pulled up from the pure water.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing process, a liquid crystal display manufacturing process, an electronic component-related manufacturing process, and the like. The present invention relates to a substrate cleaning / drying method for drying a surface and a substrate cleaning / drying apparatus used for carrying out the method.

[0002]

2. Description of the Related Art As a method for cleaning various substrates such as silicon wafers using hot water and drying the substrate surface after the cleaning, a method disclosed in, for example, JP-A-3-30330 is conventionally known. Methods are known. In the same publication, a substrate is accommodated in a chamber, hot water is injected into the chamber, the substrate is immersed in the hot water, and then the pressure in the chamber is reduced to the vapor pressure of the hot water, and the hot water is boiled. The substrate is cleaned by boiling under reduced pressure, pure water is injected into the chamber after the cleaning, and the substrate is rinsed and cleaned with the pure water.Then, the water in the chamber is discharged, and the inside of the chamber is evacuated. A substrate cleaning / drying method for drying a cleaned substrate is disclosed. Also,
Japanese Patent Application Laid-Open No. H10-15064 discloses a technique in which, when water in a chamber is discharged, nitrogen gas is supplied into the chamber at the same time as the water is drained, thereby effectively preventing dust from adhering to the substrate by the nitrogen gas. Is disclosed.

Further, Japanese Patent Application Laid-Open No. 3-169003 discloses a method in which warm water is poured into a sealed container, a semiconductor wafer is suspended from a container, supported, immersed in warm water and washed, and then the wafer is placed in the container. While keeping it from moving, isopropyl alcohol (IP
A) Dry water is supplied from the wafer surface while drying water is discharged from the lower part of the container, and the outflow rate of water and the inflow rate of dry steam are controlled so that water droplets do not remain on the surface of the wafer. A method is disclosed in which a wafer is dried by purging the wafer surface with an inert, non-condensable gas such as nitrogen, which is then purged with dry steam from the surface of the wafer by replacing the vapor with steam. .

[0004]

SUMMARY OF THE INVENTION The above-mentioned Japanese Patent Laid-Open Publication No. Hei 3-3
In the method disclosed in Japanese Patent No. 0330, the substrate is washed with warm water, rinsed with pure water, and then drained from the chamber with the substrate kept still. In this way, the substrate is drained while the substrate is stationary, and the liquid level in the chamber is lowered to remove water from around the substrate. Particles that have been removed and diffused into the liquid concentrate near the liquid surface. For this reason, when the liquid level falls on the surface of the stationary substrate, there is a problem that particles easily adhere to the surface of the substrate.

In the method disclosed in Japanese Patent Application Laid-Open No. 3-169003, after washing a substrate with warm water in a closed container, the substrate is drained from the container with the substrate still, and IPA vapor or the like is introduced into the container. Supply dry steam,
The substrate is dried by replacing water with IPA vapor or the like. As described above, since the substrate is dried only by replacing water with IPA vapor or the like while the substrate is kept stationary in the closed container, a large amount of an organic solvent such as IPA is required. Instead, the boiling point of the organic solvent used, for example, in the case of IPA, the temperature of the substrate must be raised to around 80 ° C. There is a problem that it becomes longer.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and when a substrate such as a silicon wafer is washed with pure water and then dried, the adhesion of particles to the substrate surface is reduced. In addition to reducing the amount of organic solvent used for the drying process, it is possible to reduce the amount of organic solvent used, and the substrate is washed and dried so that drying can be performed quickly without heating the substrate. It is an object of the present invention to provide a method, and to provide a substrate cleaning / drying processing apparatus capable of suitably performing the method.

[0007]

The invention according to claim 1 is
In the method of performing the cleaning and drying processing of the substrate, pure water is supplied into the cleaning tank, a rising water flow of the pure water is formed inside the cleaning tank, and the pure water overflows from the overflow section at the top of the cleaning tank. The substrate is washed by immersing the substrate in pure water in a cleaning tank, and the substrate after the above-mentioned cleaning is pulled up from the pure water in the cleaning tank that overflows from the overflow section while an ascending water flow is formed. While the substrate is being pulled up from pure water, it is water-soluble, such as alcohols, ketones, and ethers, around the substrate and has an effect of reducing the surface tension of pure water with respect to the substrate. The organic solvent vapor is supplied together with the inert gas using the inert gas as a carrier gas.

According to a second aspect of the present invention, in the method of the first aspect, an inert gas supplied together with the vapor of the organic solvent to the periphery of the substrate pulled up from the pure water is heated.

According to a third aspect of the present invention, there is provided a pure water supply port for supplying pure water, an overflow section for flowing pure water at an upper portion, and pure water stored therein. A cleaning tank in which the substrate is immersed in the pure water, and pure water supply means for supplying pure water through the pure water supply port into the cleaning tank;
A substrate elevating means for elevating the substrate between an upper position of the cleaning tank and an inner position of the cleaning tank, and a vapor of an organic solvent which is water-soluble and has an action of reducing the surface tension of pure water with respect to the substrate. A sealed chamber that closedly surrounds the upper space of the cleaning tank, and the vapor of the organic solvent is passed through the steam supply port into the sealed chamber, and the inert gas is used as a carrier gas. A vapor supply means for supplying together with the inert gas, constituting a substrate cleaning / drying processing apparatus, and a vapor supply pipe connecting the vapor supply port of the closed chamber to an inert gas supply source. A steam generating unit that is provided in the middle of the steam supply pipe and generates steam of the organic solvent, to constitute the steam supply means.

According to a fourth aspect of the present invention, in the apparatus according to the third aspect, a heater for heating an inert gas is provided in the middle of the steam supply pipe.

According to the method of the first aspect of the present invention, the substrate is immersed in the pure water in the cleaning tank in which a rising water flow of the pure water is formed and the pure water overflows from the overflow section at the top of the cleaning tank. This removes particles from the surface. The particles that have been removed from the substrate surface and diffused into the pure water are discharged from the cleaning tank together with the pure water that overflows from the overflow section at the top of the cleaning tank.
The amount of particles contained in pure water is extremely small. The substrate thus washed is lifted from the pure water in the washing tank, which forms a rising water flow and overflows from the overflow section. Even at the time of such pulling, the particles removed from the substrate surface and diffused into pure water,
Since the particles are discharged from the cleaning tank together with the pure water overflowing from the overflow section above the cleaning tank, the amount of particles adhering to the substrate is extremely small. In addition, at least while the substrate is being lifted from the pure water, the vapor of the organic solvent such as alcohols, which is water-soluble and has an action of lowering the surface tension of the pure water with respect to the substrate, is supplied to the periphery of the substrate. The surface tension is reduced, so that no water droplets remain on the substrate surface and drying is promoted.Also, even if particles remain slightly in pure water, particles hardly adhere to the substrate surface. Absent. Furthermore, instead of draining water while keeping the substrate still, the substrate is exposed from the pure water by lifting the substrate from the pure water in the cleaning tank instead of removing water from around the substrate. Particles are further reduced. The vapor of the organic solvent is supplied to the periphery of the substrate together with the inert gas using the inert gas as a carrier gas, and not only the vapor of the organic solvent is supplied to the periphery of the substrate. Less is needed.

In the method according to the second aspect of the present invention, since the inert gas and the vapor of the organic solvent sent by the inert gas are supplied to the periphery of the substrate at a high temperature, the drying of the substrate is further promoted. .

When the apparatus for cleaning and drying a substrate according to the third aspect of the present invention is used, the method according to the first aspect of the present invention is effectively implemented.

In the apparatus according to the fourth aspect of the present invention, since the inert gas is heated by the heater interposed in the steam supply pipe, the inert gas and the organic solvent sent by the inert gas are heated. The steam will be supplied to the periphery of the substrate at a high temperature, and the drying of the substrate will be further promoted.

[0015]

Preferred embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic view showing an example of the entire configuration of an apparatus used for carrying out a method of cleaning and drying a substrate according to the present invention, and FIG. 2 is a diagram showing the cleaning and drying of the apparatus. FIG. 3 is a side sectional view illustrating a configuration of a processing unit.

First, the configuration of the cleaning / drying processing section 10 will be described. The cleaning / drying processing section 10 includes a cleaning tank 12, an overflow water receiving section 14, and a closed chamber 16. The cleaning tank 12 has a pure water supply port 18 formed at the bottom thereof, while an overflow section 20 is formed at the top thereof, and the pure water overflowing from the cleaning tank 12 beyond the overflow section 20 is formed. The cleaning tank 12 and the overflow water receiving portion 14 have a double tank structure so that the overflow water flows into the overflow water receiving portion 14. The cleaning tank 12 has an internal volume such that a cassette C containing a plurality of silicon wafers, for example, a plurality of silicon wafers, can be completely immersed in pure water contained therein. The space above the washing tank 12 and the overflow water receiving portion 14 is closed and enclosed by the closed chamber 16. On the front side of the closed chamber 16, an opening 22 for taking in and out a cassette C containing a plurality of wafers is formed.
A sealing lid 24 is provided, which can open and close the opening 22 in an airtight manner. In addition, the closed chamber 16
A steam supply port 26 is formed on the side wall surface of the hopper. Further, a rubber heater 25 is disposed on the outer wall surface of the closed chamber 16 so as to cover the outer wall surface, and a thermometer for detecting the temperature of the inner wall surface of the closed chamber 16 is provided on the closed lid 24. 27 is attached through the wall surface of the sealing lid 24.

A holding member 28 for holding a cassette C containing wafers is disposed in the closed chamber 16. The holding member 28 is vertically reciprocated to be held by the holding member 28. The lift drive mechanism for moving the cassette C moved up and down between the upper position of the cleaning tank shown by the two-dot chain line and the inner position of the cleaning tank shown by the solid line is a closed chamber 1.
6 is attached. The lifting drive mechanism includes a drive rod 30 having an upper end connected to the holding member 28,
0 and a drive pulley 34 for slidably supporting the bearing 0
And a belt 3 which is stretched between the driven pulley 36 and the two pulleys 34 and 36 and to which the lower end of the drive rod 30 is fixed.
8 and a drive motor 40 for driving the drive pulley 34 to rotate. The holding member 28
By directly holding a plurality of wafers, the cassette C can be omitted.

A pure water supply pipe 42 connected to a pure water supply source is connected to the pure water supply port 18 of the cleaning tank 12 through pipes 44 and 4.
6, and an air opening / closing valve 48, a filter device 50, and a ball valve 52 are provided in the pure water supply pipe 42. A pure water return pipe 54 is branched and connected in the middle of the pure water supply pipe 42, and an air opening / closing valve 56 is interposed in the pure water return pipe 54. The pure water supply port 18 of the cleaning tank 12 is connected to the pure water supply line 4.
Apart from 2, it is connected to a pure water discharge pipe 58 branched from the pipe 44, and the pure water discharge pipe 58 is connected to the drain via a pipe 60. On the other hand, the overflow water receiving portion 14
Is formed with a drain port 62, and the drain port 62 has a pipe 64.
The drain pipe 66 is connected to the drain via a pipe 60 and connected to the drain via a pipe 60. Air open / close valves 68 and 70 are interposed in the pure water discharge pipe 58 and the drain pipe 66, respectively.

Further, the pure water supply port 18 of the cleaning tank 12 is
The drain port 62 of the overflow water receiving portion 14 is connected to a vacuum exhaust pipe 74 branched from the pipe 64, while being connected to a vacuum exhaust pipe 72 branched from the pipe 46. Each of the vacuum exhaust pipes 72 and 74 has an air opening / closing valve 7.
6 and 78 are interposed respectively, and both evacuation lines 7
The two 74 merge and are connected to a water-sealed vacuum pump 82 through a vacuum exhaust pipe 80. Reference numeral 84 in the figure denotes a ball valve provided in the vacuum exhaust pipe 80.

The steam supply port 26 of the closed chamber 16
Includes an inert gas such as nitrogen (N ₂) For gas supply
The communicating steam supply pipe 86 is connected and connected.
The steam supply line 86 has an air opening / closing valve 88 and a heater.
90, alcohol vapor generation unit 92 and fill
A heater 94 is interposed. Alcohol vapor generation unit
To 92, methyl alcohol, ethyl alcohol, I
Vapors of alcohols such as PA are generated. In addition, Al
Other than alcohols, they are water-soluble and similar to alcohols.
Has the effect of reducing the surface tension of pure water on the plate
Ketones such as acetone and diethyl ketone
, Methyl ether, ethers such as ethyl ether,
Use polyhydric alcohols such as ethylene glycol
Can be used, but with low content of impurities such as metals
In view of the fact that IPA is offered to the market, IPA
It is most preferred to use This alcohol vapor generation
As a method for generating alcohol vapor in the unit 92,
Is a method of blowing inert gas into alcohol,
Appropriate method such as a method of performing
Should be used. Also, alcohol vapor
The raw unit 92 has a temperature control function,
A controlled alcohol vapor is generated
ing. Further, in the middle of the steam supply line 86,
Branching in the section between the air opening / closing valve 88 and the heater 90
Between the alcohol vapor generation unit 92 and the filter 94
A branch pipe line 95 that joins in the section of
The branch line 95 has an ionizer 96 and an air opening / closing valve 9.
8 are interposed. Then, the air opening / closing valve 88 opens.
Nitrogen gas from the nitrogen gas supply
And heated by the nitrogen gas.
Alcohol generated by the alcohol vapor generation unit 92
Steam is sent through steam supply line 86 and
Is cleaned by the filter 94 together with the nitrogen gas.
After that, the closed chamber 16 is passed through the steam supply port 26.
It is configured to be supplied inside. In addition, air on-off valve
By opening 98, the heat transmitted from the nitrogen gas supply
The nitrogen gas heated by the heater 90 is supplied to the ionizer 96.
Is heated and ionized by
The nitrogen gas purified by the filter 94 is supplied
Supply into the closed chamber 16 through the supply port 26
You can do it.

Further, the apparatus controls the rubber heater 25 based on the detection signal of the thermometer 27 to maintain the temperature of the inner wall surface of the closed chamber 16 at a predetermined temperature, for example, the temperature of hot pure water for a desired period. Controller 100 is provided.

Next, an example of a method for cleaning and drying a substrate, for example, a silicon wafer, using the substrate cleaning / drying apparatus having the above-described configuration will be described.

First, the air on / off valves 48 and 70 are opened, and the other air on / off valves 56, 68, 76, 78, 88,
98 with the pure water supply source connected to the pure water supply pipe 42
And pure water, for example, hot pure water, is sent through the pipes 46 and 44, and hot pure water is continuously supplied into the cleaning tank 12 from the pure water supply port 18 at the bottom thereof. Form. At this time, the hot pure water that has filled the inside of the cleaning tank 12 overflows from the overflow section 20 at the upper part thereof, and forms a horizontal overflow of the hot pure water at the upper part of the cleaning tank 12. The hot pure water that has overflowed from the overflow section 20 at the top of the washing tank 12 flows into the overflow water receiving section 14, passes through the drain port 62 from the overflow water receiving section 14, and drains through the drain pipe 66 and the pipe 60. Is discharged. At the same time, the rubber heater 25 heats the wall surface of the closed chamber 16. In this heating, the controller 100 controls the rubber heater 25 based on the detection signal of the thermometer 27 attached to the wall surface of the closed lid 24, and the temperature of the inner wall surface of the closed chamber 16 becomes a predetermined temperature, for example, the temperature of hot pure water. This is performed so as to be maintained at 60 ° or more as an example. Thus, the closed chamber 1
By heating the inner wall surface of the wafer 6, during the cleaning of the wafer, which will be described later, or in the process of pulling up the wafer from the hot pure water, condensation of water vapor on the inner wall surface of the closed chamber 16 does not occur, and alcohol vapor is removed from the wafer. When supplied to the surroundings, the heat energy of the vapor is prevented from being taken away by the condensed water droplets, and the drying efficiency of the wafer is improved. Then, a plurality of wafers stored in the cassette C are carried into the closed chamber 16 through the opening 22, and the closed cover 24 is airtightly closed.

Next, the elevating drive mechanism is operated to lower the cassette C held by the holding member 28 to the position indicated by the solid line in FIG. 2, so that the wafer is immersed in hot pure water in the cleaning tank 12.
The wafer is cleaned by placing the wafer in a rising stream of warm pure water for a predetermined time. Thereby, particles are removed from the surface of the wafer. Then, the particles removed from the wafer surface and diffused into the hot pure water are discharged from the cleaning tank 12 together with the hot pure water overflowing from the overflow section 20 above the cleaning tank 12.

When the cleaning of the wafer is completed, the elevation drive mechanism is operated to raise the cassette C held by the holding member 28 to the position shown by the two-dot chain line in FIG. Pull up from inside. Since the wafer is lifted from the hot pure water in this manner, the particles diffused into the hot pure water do not reattach to the surface of the wafer. At the same time that the wafer is started to be pulled up from the hot pure water, the air opening / closing valve 88 is opened, and nitrogen gas is sent from the nitrogen supply source through the steam supply line 86, and alcohol vapor is supplied from the steam supply port 26 into the closed chamber 16. Then, alcohol vapor is supplied to the periphery of the wafer being pulled up from the hot pure water. This supply of alcohol vapor
The process is performed until the pulling of the wafer from the hot pure water is completed. The air opening / closing valve 88 is opened before starting the wafer pulling from the hot pure water to supply the alcohol vapor into the closed chamber 16, and the pure water interface is filled with the alcohol vapor at the time of starting the wafer pulling from the hot pure water. It may be set to be in the state of being performed. When the supply of alcohol vapor to the periphery of the wafer is started, the operation of heating the wall surface of the closed chamber 16 by the rubber heater 25 is ended. Of course, the wall surface of the closed chamber 16 may be heated until the drying of the wafer is completed.

Before opening the air opening / closing valve 88 and supplying the alcohol vapor into the closed chamber 16, the air opening / closing valve 98 is opened, and the heated nitrogen gas (ionized) is supplied from the nitrogen supply source through the branch pipe 95. It is preferable that the filter 94 be heated while the filter 94 is heated. At the same time as opening the air opening / closing valve 88 and supplying alcohol vapor into the closed chamber 16, the air opening / closing valve 98 is also opened,
The heated and ionized nitrogen gas may be sent into the closed chamber 16. By feeding the heated and ionized nitrogen gas into the closed chamber 16, a large amount of static electricity is generated in the closed chamber 16 because the closed chamber 16 is formed of a corrosion resistant material and has an insulator structure ( (2 kV to 10 kV), the static electricity is electrically neutralized by the ionized nitrogen gas and disappears. Therefore, it is possible to effectively prevent particles from adhering to the surface of the wafer due to static electricity.

When the pulling of the wafer from the hot pure water is completed, the air opening / closing valve 48 is closed and the air opening / closing valve 5 is closed.
6, the supply of hot pure water to the cleaning tank 12 is stopped,
At the same time, the air opening / closing valve 68 is opened to discharge the hot pure water in the cleaning tank 12 to the drain through the pure water discharge pipe 58 and the pipe 60. When the discharge of the hot pure water from the cleaning tank 12 is completed,
The air on-off valves 68 and 70 are closed. At the same time as starting to discharge hot pure water from the cleaning tank 12, the air on-off valve 7
6. Open 6, 78 and operate the water ring vacuum pump 82,
The inside of the closed chamber 16 is evacuated through each of the vacuum exhaust pipes 72 and 74 and the vacuum exhaust pipe 80,
By reducing the pressure in the chamber 6, the alcohol condensed on the surface of the wafer and replaced with pure water is evaporated to dry the wafer. At the time when the withdrawal of the wafer from the hot pure water is completed and the decompression operation in the closed chamber 16 is started,
Although the supply of alcohol vapor into the closed chamber 16 is stopped by closing the air opening / closing valve 88, a small amount of alcohol vapor may be continuously supplied into the closed chamber 16 even during the decompression operation in the closed chamber 16. . Further, the operation of reducing the pressure in the closed chamber 16 and the operation of supplying the alcohol vapor into the closed chamber 16 may be alternately repeated.

When the drying of the wafer is completed, the vacuum pump 8
2 is stopped, and the inside of the closed chamber 16 is returned from the reduced pressure to the atmospheric pressure. As described above, when the heated and ionized nitrogen gas is fed into the closed chamber 16 concurrently with the supply of the alcohol vapor into the closed chamber 16, the drying of the wafer under reduced pressure is performed. Is continued to supply a small amount of the heated and ionized nitrogen gas into the closed chamber 16 until the process is completed. After the drying of the wafer is completed, the inside of the closed chamber 16 is returned to the atmospheric pressure after the wafer is dried. A heated nitrogen gas (it need not be ionized) may be supplied. And finally, after closing the air opening / closing valve 98 and stopping the supply of the nitrogen gas in the closed chamber 16,
The sealing lid 24 is opened, and the cassette C containing the wafer having been subjected to the cleaning and drying processing is taken out of the sealing chamber 16 through the opening 22.

FIG. 3 shows a time chart in the above series of wafer cleaning / drying processing steps.

In the above description, the nitrogen gas sent from the nitrogen gas supply source is heated by the heater, and the heated nitrogen gas is used to send the alcohol vapor generated by the alcohol vapor generation unit into the closed chamber. However, the alcohol gas may be fed into the closed chamber by the nitrogen gas without heating the nitrogen gas sent from the nitrogen gas supply source. Further, pure water may be used instead of warm pure water to clean the substrate in the cleaning tank. Further, as a means for heating the wall surface of the closed chamber, a UV lamp or the like may be used instead of the rubber heater as described above and shown in the drawings.
It is not necessary to heat the walls of the closed chamber.

[0032]

When the substrate is cleaned and dried by the method according to the first aspect of the present invention, the particles once removed from the surface of the substrate by the cleaning are reattached to the substrate surface. It can be almost eliminated, and the surface of the substrate is quickly dried without particularly heating the substrate, so that the work efficiency in a series of washing and drying processes can be improved. In addition, since the vapor of the organic solvent is supplied to the periphery of the substrate together with the inert gas using the inert gas as a carrier gas, unlike the case where only the vapor of the organic solvent is supplied to the substrate, a small amount of the organic solvent is used. Thus, the substrate can be dried.

According to the method of the present invention, the drying efficiency of the substrate can be further improved.

By using the apparatus for cleaning and drying a substrate according to the third aspect of the present invention, the method for cleaning and drying a substrate according to the first aspect of the invention can be suitably implemented.

In the apparatus according to the fourth aspect of the present invention, it is possible to supply the vapor of the inert gas and the organic solvent sent by the inert gas to the periphery of the substrate at a high temperature. Can be more enhanced.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an example of the entire configuration of an apparatus for performing a substrate cleaning / drying processing method according to the present invention.

FIG. 2 is a side sectional view illustrating a configuration of a cleaning / drying processing unit of the apparatus illustrated in FIG.

FIG. 3 is a diagram showing an example of a time chart in a series of wafer cleaning / drying processing steps according to the method of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 Cleaning / drying processing part 12 Cleaning tank 14 Overflow water receiving part 16 Sealed chamber 18 Pure water supply port 20 Overflow part 24 Sealing lid 25 Rubber heater 26 Steam supply port 27 Thermometer 28 Holding member 30 Drive rod 38 Belt 40 Drive Motor 42 Pure water supply line 48, 56, 68, 70, 76, 78, 88 Air open / close valve 58 Pure water discharge line 62 Drain outlet 66 Drainage line 72, 74, 80 Vacuum exhaust line 82 Water-sealed vacuum Pump 86 Vapor supply line 90 Heater 92 Alcohol vapor generation unit 100 Controller

Claims (4)

[Claims] 1. A pure water is supplied into a cleaning tank, a rising water flow of the pure water is formed inside the cleaning tank, and the pure water overflows from an overflow section at an upper portion of the cleaning tank. The substrate after the cleaning is lifted from the pure water in the cleaning tank in which the rising water flow is formed and overflows from the overflow portion, and the substrate after the cleaning is washed by immersing the substrate in the pure water. During the pulling, the vapor of an organic solvent that is water-soluble and has the effect of lowering the surface tension of pure water with respect to the substrate is supplied to the periphery of the substrate together with the inert gas using an inert gas as a carrier gas. A method for cleaning and drying a substrate, comprising supplying the substrate. 2. The method according to claim 1, wherein the inert gas is a heated inert gas. 3. A pure water supply port for supplying pure water and an overflow section for flowing pure water at an upper portion, containing pure water therein and storing a substrate in the pure water. A pure water supply means for supplying pure water into the cleaning tank through the pure water supply port; and moving the substrate up and down between a position above the cleaning tank and a position inside the cleaning tank. A substrate raising / lowering means, and a vapor supply port for supplying vapor of an organic solvent which is water-soluble and has a function of lowering the surface tension of pure water with respect to the substrate, and encloses a space above the cleaning tank in a closed manner. A closed chamber, a steam supply pipe connecting the steam supply port of the closed chamber to a supply source of an inert gas, and a steam provided in the middle of the steam supply pipe to generate a vapor of the organic solvent. Having a steam generating unit, The organic solvent vapor through the steam supply port to the inner, the cleaning and drying apparatus of the substrate, characterized in that a steam supply means for supplying with the inert gas an inert gas as a carrier gas. 4. The apparatus for cleaning and drying a substrate according to claim 3, wherein a heater for heating an inert gas is provided in the middle of the steam supply pipe.