JP2000091124A - Integrated magnetic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an integrated magnetic device capable of providing little leakage of magnetic field, small size and high L- and Q-values. SOLUTION: To achieve little leakage of magnetic field by forming a closed magnetic circuit in the relative positioning of a conductor 1 and a magnetic material 2 in an integrated magnetic device, the conductor 1 is positioned close to regions 2a and 2b opposite to each other via a gap 3 so that the direction 5 of magnetic field due to electromagnetic induction in the regions is directed as indicated by 5a and 5b. While maintaining an occupied volume to a minimum, main properties as small sized inductance device can be improved, such as inductance (L) value, factor of quality (Q) value for small size, high gain and low power consumption, and the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated magnetic element structure used as an ultra-compact high-performance inductor element in an integrated circuit operating in a high-frequency region such as mobile communication, satellite communication, and satellite broadcasting.

[0002]

2. Description of the Related Art Conventionally, in order to realize a high-frequency integrated circuit, an active element operating at a high frequency and a passive element composed of an inductor element, a capacitance element, and the like are separated as an independent element through an insulating substrate. In some cases, for example, the passive element itself is assembled by combining some inductor elements and the like as individual components. But,
In such a method, electric characteristics such as matching characteristics change depending on an assembling position, so that it is difficult to mass-produce with a high yield, and the performance of existing monolithically manufacturable inductor elements is insufficient. Therefore, the degree of freedom in circuit design is limited, and if individual components with a large element volume are used instead to avoid this, not only the above-mentioned change in electrical characteristics but also high integration and miniaturization can be achieved. There was a problem that it became difficult. In order to solve this problem, individual elements must be monolithically constructed on a minimum substrate, and ultimately, an element configuration oriented to high-density and high-density integrated circuits called system-on-chip. It is essential to achieve. Among them, the inductor element is downsized to improve the integration degree of the high frequency circuit, and the quality factor (Q) value and the inductance (L) value are increased and the loss is reduced for higher gain and lower power consumption. However, there is a major problem in that progress of performance improvement and miniaturization are delayed most among integrated circuit elements. In an integrated magnetic element, which is an integrated inductor element, there are roughly the following two configuration methods when roughly classified based on the winding method (coil pattern) of the conductor.
One is a planar integrated magnetic element in which a conductor is bent (bent) in a plane or wired in a spiral shape, such as a serpentine type or a spiral type, or a combination of these, a serpentine-spiral composite type. The other is a three-dimensional integrated magnetic element represented by a solenoid type in which a conductor is wound in a cylindrical shape. Of the planar coil patterns, the L value can be maximized, for example, in a spiral type as shown in FIG. 6A, so that the same electrical characteristics such as L value and Q value can be obtained. It can be said that the spiral type is the configuration method that can be most miniaturized in plan view. However, in the spiral type, as a method of providing an external lead-out terminal, 2
It is necessary to connect the spiral conductors (coils) of the layers with through-hole conductors or separately form the terminal leading conductors 60, which complicates the manufacturing process as compared with other planar coil patterns. From the viewpoint of the entire integrated circuit, there is an essential problem that the area occupied by the planar coil pattern is considerably large, the area utilization efficiency is very low, and the degree of freedom in layout design is greatly restricted.
In addition, the planar coil pattern has a magnetic field at the center of the coil having the highest magnetic flux density [in the plan view shown in FIG.
The direction perpendicular to the plane of the paper (not shown)] is open to the outside as it is, and does not have a so-called closed magnetic circuit structure. Therefore, a parasitic signal (magnetically induced parasitic signal) induced by the released magnetic field (leakage magnetic field) is superimposed on an operation signal of another neighboring element, and adversely affects the overall circuit performance. Under the area, it was difficult to obtain practical required L values and Q values. That is,
In order to obtain the required L value and Q value, it is necessary to increase the planar size of the conductor (coil) or to increase the size three-dimensionally by lamination, and the accompanying increase in the conductor length (coil length) results in In addition, the electric resistance, the parasitic capacitance, the current path (deterioration in efficiency), the magnetically induced parasitic signal, and the like are increased. Also, if a magnetic material is provided inside and outside the coil to reduce the effect of the L- and Q-values and the magnetically induced parasitic signal, the occupied volume increases and the process becomes extremely complicated. It could not be a practical manufacturing method. Further, from a more practical point of view, it is preferable to have a trimming function for adjusting circuit characteristics such as the magnitude of inductance (circuit adjustment) after forming the element, but it is difficult to add a function structurally to a planar coil pattern. Therefore, the final performance of the circuit remarkably depends on the characteristics of conductors and magnetic materials, structural parameters of elements, etc.
It has the essential drawback that it is difficult to secure and improve yield and reliability, which are important requirements, and has been a major obstacle to practical application. On the other hand, for example, as shown in FIG. 6B, the three-dimensional type is a magnetic core type solenoid in which a magnetic body 2 is installed in a linear solenoid coil 1c. It is promising in that relatively higher L and Q values can be achieved relatively easily than air-core solenoids without a magnetic body. Moreover, since it is structurally possible to add a function such as making the magnetic body 2 movable and changeable, it is necessary to add a trimming function for circuit adjustment, which is difficult with the above-mentioned flat type. Is relatively easy, and the performance of the integrated magnetic element
Since the dependence on the characteristics of the conductor and the magnetic material, the structural parameters of the element, and the like can be reduced, it is easy to realize the yield and reliability, which are important requirements in practical use, and it is an extremely promising element structure. However, in the linear solenoid coil (magnetic core solenoid) 1c, the magnetic field at the center of both ends of the solenoid having a higher magnetic flux density (direction 5 of the electromagnetic induction magnetic field at a certain moment) is open to the outside as it is, so-called closed magnetic field. Since it does not have a path structure, the leakage magnetic field causes a magnetically induced parasitic signal to be generated. To avoid this, if a closed magnetic field structure such as covering the entire solenoid with a magnetic material or forming a closed magnetic circuit with a circular solenoid (toroidal) structure is adopted, the volume occupied by the coated magnetic material and its formation can be reduced. And the process complexity increased, and the occupied area increased considerably due to the dead space in the center of the ring. As described above, the three-dimensional magnetic core integrated magnetic element is extremely important for practical use in that it is small and can realize high L and Q values, and has the possibility of adding a trimming function. regardless of,
Since the magnetic field at the center of both ends of the magnetic core with the highest magnetic flux density is not open to the outside as it is, it does not have a so-called closed magnetic circuit structure. There is a serious problem in practical use that it has a bad effect on other element circuits and it is difficult to realize a highly reliable and stable integrated circuit with high density and high integration.

[0003]

In the above-mentioned prior art, a three-dimensional magnetic core integrated magnetic element having a so-called closed magnetic circuit structure in which the magnetic field at the center of both ends of the magnetic core having the highest magnetic flux density is opened to the outside as it is. Because the structure was used,
There is an obstacle that the leakage magnetic field becomes a source of the magnetically induced parasitic signal and adversely affects the operation of other element circuits in the vicinity. In addition, with the generation and propagation of the magnetically induced contribution signal, the entire integrated circuit becomes Since characteristics, operation stability, reliability, and the like decrease, it has been difficult to realize a small-sized and high-performance integrated circuit having required performance.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems in the prior art, and to reduce the leakage magnetic field, reduce the size and increase the inductance (L) value, and reduce the size of the high-frequency circuit to improve the degree of integration. Another object of the present invention is to provide an integrated magnetic element structure capable of further improving a quality factor (Q) value for high gain and low power consumption.

[0005]

Means for Solving the Problems In order to achieve the object of the present invention, the present invention is configured as described in the claims. That is, as described in claim 1, a conductor capable of generating an electromagnetic induction magnetic field, and a magnetic body disposed in close proximity to the conductor and capable of controlling the intensity of the electromagnetic induction magnetic field,
An integrated circuit comprising at least a power supply signal receiving means for supplying power to the conductor and receiving an electromagnetic induction signal, and a substrate on which the conductor, the magnetic body and the power supply signal receiving means are constructed as an electronic circuit. In the magnetic element, the conductor is an integrated magnetic element having a structure in which the conductors are arranged near an area facing each other via a gap in the magnetic body so that directions of electromagnetic induction magnetic fields generated in the area are opposite to each other. is there. With the element structure according to the first aspect, the electromagnetic induction magnetic field generated by the conductor is controlled by the magnetic material, and the directions of the electromagnetic induction magnetic fields generated in the region of the magnetic material are opposed to each other. As a result, the magnetic flux in the magnetic body becomes a closed magnetic path, and the generation of the leakage magnetic field can be suppressed, so that the adverse effect on the integrated circuit performance due to the magnetically induced parasitic signal caused by the leakage magnetic field in the related art can be significantly reduced. In addition, since the magnetic material has a high magnetic permeability even in a high frequency range and is made of a high magnetic permeability soft magnetic material having a high electric resistance, the magnetic material is generated in the magnetic material even in a high frequency range of the G (giga) Hz class. Loss due to eddy current or the like is reduced, and as a result, there is an effect that extremely large L value and Q value can be realized. Also, as described in claim 2,
2. The integrated magnetic element according to claim 1, wherein the conductor is configured to be electrically connectable to the power supply signal receiving means from both ends of the conductor or a required position other than the both ends.
Alternatively, the integrated magnetic element has a structure that can be electrically connected to the power supply signal receiving means from both ends of the conductor and required positions other than the both ends. By adopting the element structure as described in the second aspect, the magnetic flux in the magnetic body becomes a closed magnetic circuit, and the effect of realizing extremely large L value and Q value while suppressing the generation of the leakage magnetic field can be obtained. Same as above, but since it can be electrically connected to the power supply signal receiving means from both ends of the conductor or positions other than both ends of the conductor, select and adjust the number of windings of the conductor to the required number It is possible to change the required L value smaller than the L value defined by the number of windings at both ends of the conductor into a complicated change of a manufacturing process, a position of an integrated magnetic element, a occupied area, and the like. There is an effect that can be easily realized without any. According to a third aspect of the present invention, there is provided the integrated magnetic element according to the first or second aspect, wherein an outer peripheral surface layer of a conductor cross section that intersects the longitudinal direction of the conductor has an uneven structure. It is. With the element structure according to the third aspect, in addition to the common effect according to the first aspect, the surface layer (skin) where the current distribution is concentrated is formed by the uneven structure provided on the outer peripheral surface layer of the conductor. 2) The effect of increasing the area of the region makes it possible to reduce the increase in parasitic resistance in the high-frequency region due to the decrease in the effective current density, so that power can be supplied and signals can be received efficiently, and as a result, the extremely large L value and Q This has the effect of realizing the value. According to a fourth aspect of the present invention, in the integrated magnetic element according to the first or second aspect, the integrated magnetic element has a structure in which a part of the magnetic body has a region having a large electric resistance of the magnetic body. It is an element. With the element structure according to the fourth aspect, in addition to the common effect according to the first aspect, the electric resistance of a partial region of the magnetic body is increased, so that the electromagnetic induction magnetic field is increased. As a result, generation and propagation of eddy currents induced in the magnetic material are suppressed, and performance degradation such as deterioration of efficiency and L-value frequency characteristics of the inductor element due to the eddy current loss can be reduced. As a result, In particular, there is an effect that extremely large L value and Q value can be realized even in a high frequency range. According to a fifth aspect of the present invention, in the integrated magnetic element according to the first or second aspect, the integrated magnetic element has a structure in which a cross-sectional area reduction region of the magnetic body is formed in a part of the magnetic body. It is assumed that. According to the element structure of the fifth aspect, in addition to the common effect of the first aspect, the sectional area of a part of the magnetic body is reduced, so that the electromagnetic induction magnetic field is reduced. As a result, generation and propagation of eddy currents induced in the magnetic material are suppressed, and performance degradation such as deterioration of efficiency and L-value frequency characteristics of the inductor element due to the eddy current loss can be reduced. As a result, In particular, there is an effect that extremely large L value and Q value can be realized even in a high frequency range.

The present invention maintains the occupied volume to a minimum by making the relative arrangement structure of the conductor and the magnetic body of the integrated magnetic element capable of realizing a state in which the leakage magnetic field is small due to the closed magnetic circuit. However, it improves the main characteristics of the small inductor element such as the L value and the Q value. That is, a conductor that can generate an electromagnetic induction magnetic field, and a magnetic body that can control the intensity of the electromagnetic induction magnetic field that is arranged close to the conductor,
An integrated magnetic element comprising: a power supply signal receiving means for supplying power to the conductor and receiving an electromagnetic induction signal; and a substrate for constructing the conductor, the magnetic body, and the power supply signal receiving means as an electronic circuit. , An integrated magnetic element having a structure in which the conductors are arranged near an area facing each other via a gap in the magnetic body so that the directions of electromagnetic induction magnetic fields generated in the area are opposite to each other. . The present invention maintains the occupied volume to a minimum by making the relative arrangement structure of the conductor and the magnetic body in the integrated magnetic element a structure capable of realizing a state with a small leakage magnetic field due to the closed magnetic circuit. However, since the main characteristics as a small inductor element such as L value and Q value can be improved,
In an integrated circuit, particularly, an integrated circuit operating in a high-frequency region, there is an effect that a very small high-performance inductor element can be realized.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS As an embodiment of the present invention, Si
The configuration of the integrated magnetic element of the present invention will be described by taking as an example a case where the configuration is limited to the components of the inductor element in the structure of the integrated circuit using the substrate. Note that, in this embodiment, an element configuration in the case where the element is employed in a high-frequency circuit in the range of several hundred M (mega) Hz to G (giga) Hz will be described. <First Embodiment> FIG. 1A is a schematic view showing an example of the structure of an integrated magnetic element of the present invention. In FIG. 1A, 1 is a conductor, 2 is a magnetic material, 3 is a gap in the magnetic material, 4
Is the direction of the current at a certain moment, and 5 is the direction of the electromagnetic induction magnetic field at a certain moment. Conductor 1 supplies power to conductor 1;
In addition, it is electrically connected to a power supply signal receiving means (for example, an electronic circuit including a high-frequency power supply and another inductor element, a capacitance element, a resistance element, and the like) capable of receiving an electromagnetic induction signal, and has a mouth-shaped shape. The one region 2a facing through the gap 3 in the magnetic body 2 and the other region 2b facing through the gap 3 in the magnetic body 2
a and 2b are arranged in a winding state such that they correspond to the respective magnetic cores of the two magnetic core solenoids 1a and 1b. Moreover, assuming the direction 4 of the current flowing through the conductor 1 at a certain moment as shown in FIG.
The direction 5 of the electromagnetic induction magnetic field at a moment at a and 2b is generated in the regions 2a and 2b of the magnetic body 2 so as to be the directions indicated by 5a and 5b according to the so-called Bio-Savart law. The directions 5 of the electromagnetic induction magnetic fields are arranged so as to face each other as shown by 5a and 5b. FIG. 1A shows only a schematic structure of a main part of the integrated magnetic element of the present invention. Actually, an oxide or a nitride such as silicon dioxide or silicon nitride is provided around the conductor 1. Or insulating material made of polymer or the like (not shown)
, And is constructed on an Si substrate (not shown) as an integrated circuit. The conductor 1 is made of Ag,
It is made of a low electric resistance material made of Cu, Au, Al, alloy or the like. The magnetic body 2 is (Fe, Co)-(Si, C)-(B, P) which is a (Fe, Co) -metalloid material.
Based material or (Fe, Co) -transition metal based material (F
e, Co)-(Zr, Hf, Nb, Ti, V, Ta,
Rare earth elements such as W, Y, Ce)-(B, O) nano (na
no) crystalline materials, metal-nonmetallic materials (Fe, C
o)-(B, Si, Hf, Zr, Al)-(F, O,
N) Based on a magnetically permeable soft magnetic material such as nano-granular crystal, it has high saturation magnetic flux density and high soft magnetic characteristics by controlling crystal magnetic anisotropy. It maintains high magnetic permeability even in a high frequency range, and at the same time has high electric resistance. As described above, the electromagnetic induction magnetic field generated by the conductor 1 is
While being controlled by the magnetic body 2, the directions of the electromagnetic induction magnetic fields generated in the regions 2a and 2b of the magnetic body 2 are 5a and 5b.
As shown by b, the magnetic flux in the magnetic body 2 becomes a closed magnetic circuit and can suppress the generation of the above-described leakage magnetic field. The adverse effects on integrated circuit performance could be significantly reduced. Moreover, the magnetic body 2 has a high magnetic permeability even in a high frequency range and is made of a high magnetic permeability soft magnetic material having a high electric resistance. The loss due to the generated eddy current was reduced, and as a result, extremely large L value and Q value could be realized. Here, an example of a method of further increasing the L value of the integrated magnetic element of the present invention will be described based on the embodiment shown in FIG. FIG. 1B is a schematic diagram showing another example of the integrated magnetic element structure of the present invention.
It has a structure in which the integrated magnetic element shown in FIG. In FIG. 1B, 1 is a conductor, 2 is a magnetic material, 3 is a gap in the magnetic material, 4 is the direction of current at a certain moment,
5 indicates the direction of the electromagnetic induction magnetic field at a certain moment. FIG. 1 (a)
As in the embodiment shown in FIG. 1, the conductor 1 is electrically connected to a power supply signal receiving means (not shown) capable of supplying power to the conductor 1 and receiving an electromagnetic induction signal. Regions 2a opposed to each other via three voids 3 in
2b, 2c, 2d, as if areas 2a, 2b, 2
The windings are arranged in such a manner that c and 2d correspond to the respective magnetic cores of the four magnetic core solenoids. Moreover, conductor 1
Assuming the direction 4 of the current flowing through the conductor 1 at a certain moment as shown in the figure, the regions 2a, 2b,
The direction 5 of the electromagnetic induction magnetic field at a certain moment in 2c and 2d is
The directions 5 of the electromagnetic induction magnetic fields generated in the regions 2a, 2b, 2c and 2d of the magnetic material are arranged so as to face each other as shown by 5a, 5b, 5c and 5d. FIG. 1B shows only the configuration of the main part of the present invention, and basically uses the same material configuration as that of the integrated magnetic element shown in FIG. 1A. As described above, the conductor 1
The electromagnetic induction magnetic field generated by the magnetic material 2 is controlled by the magnetic material 2 and the regions 2a, 2b, 2
The direction 5 of the electromagnetic induction magnetic field generated in c and 2d is 5a, 5
As shown by b, 5c, and 5d, the magnetic flux in the magnetic body 2 becomes a closed magnetic path, and the generation of the above-described leakage magnetic field can be suppressed. The adverse effect on the performance of the integrated circuit due to the magnetically induced parasitic signal was significantly reduced. Moreover,
Since the magnetic body 2 has a high magnetic permeability even in a high frequency range and is made of a high magnetic permeability soft magnetic material having a high electric resistance, the magnetic substance 2 is generated in the magnetic body 2 even in a high frequency range of GHz class. The loss due to the eddy current was reduced, and as a result, extremely large L value and Q value could be realized. In particular, in the present embodiment, since the winding portion of the conductor 1 functioning as an inductor element is doubled, the L value can be increased as compared with the embodiment shown in FIG. As described above, by increasing the number of voids 3 in the magnetic body 2, the required L can be easily adjusted without increasing the complexity of the manufacturing process.
Value could be increased. As described above, with the integrated magnetic element structure of the present invention, a state in which a leakage magnetic field is small due to the closed magnetic circuit can be realized, so that the process volume is not increased and the occupied volume is kept to a minimum. However, the main characteristics of the small inductor element such as the L value and the Q value can be improved, and a highly reliable and high-performance high-frequency integrated circuit can be realized. It should be noted that the results described here are only examples of the effectiveness of the present invention, and by implementing the present invention, it is possible to realize other high-performance integrated circuits that require an inductor element function. Becomes

Embodiment 2 Another embodiment of the integrated magnetic element of the present invention will be described with reference to FIG. FIG. 2 is a schematic plan view of the perspective view showing the configuration of the integrated magnetic element of the present invention shown in FIG. 1A of the first embodiment. In FIG. 2, 1 is a conductor, 2 is a magnetic body, 3 is a gap in the magnetic body, 20 is both ends of the conductor 1, and 21a and 21b are:
This is a lead conductor. As in the embodiment shown in FIG. 1A, the conductor 1 supplies power to the conductor 1 and
A power supply signal receiving means (not shown) capable of receiving an electromagnetic induction signal is electrically connected via both ends 20 of the conductor 1 so that the magnetic field relationship described above is realized in the mouth-shaped magnetic body 2. They are arranged in a winding state. Also, from a required position other than both end portions 20 of the conductor 1 (only two places are illustrated in the present embodiment), a lead-out conductor 21a electrically connectable to the power supply signal receiving means (not shown). , 2
1b (only two are illustrated in the present embodiment). FIG. 2 shows only a schematic configuration of a main part of the present invention, and basically uses the same material configuration as that of the embodiment shown in FIG. As described above, the electromagnetic induction magnetic field generated by the conductor 1 is controlled by the magnetic body 2 and the magnetic flux in the magnetic body 2 becomes a closed magnetic path, thereby suppressing the above-described generation of the leakage magnetic field. As in the first embodiment, extremely large L values and Q values can be realized. However, in the present embodiment, since the lead-out conductors 21a and 21b (only two are illustrated in the present embodiment) are provided, the required number of turns of the conductor 1 can be selected. A required L value smaller than the L value defined by the number of windings at both ends 20 of the conductor 1 can be realized without changing the manufacturing process or changing the position or occupied area of the integrated magnetic element. We were able to. By configuring the integrated magnetic element of the present invention as described above, a state in which the leakage magnetic field is small due to the closed magnetic path can be realized, without increasing the complexity of the process, and
While keeping the occupied volume to a minimum, not only can the main characteristics of the small inductor element such as the L value and the Q value be improved, but it is also possible to realize a plurality of required L values, which makes it extremely reliable. A high-performance high-frequency integrated circuit was realized. Note that the results described here are only examples of the effectiveness of the present invention, and by implementing the present invention, other high-performance integrated circuits requiring the inductor element function can be realized.

<Embodiment 3> FIG. 3 is a perspective view showing the structure of a conductor 1 of an integrated magnetic element according to the present invention, in which a part of the conductor 1 shown in FIG. .
In FIG. 3, 1 is a conductor, 30 is a longitudinal direction of the conductor 1, and 3 is a conductor.
1 is a cross section of the conductor 1 intersecting in the longitudinal direction 30 of the conductor 1;
Reference numeral 2 denotes a peripheral surface layer of the cross section 31 of the conductor 1. As shown in the drawing, the outer peripheral surface layer 31 of the conductor 1 has a concavo-convex structure, that is, a concavo-convex pattern in the longitudinal direction 30 so as to increase the perimeter without changing the area of the cross section 31. FIG.
Merely shows the configuration of the main part of the present invention, and basically uses the same material configuration as that of the embodiment shown in FIG. In general, the resistance of a conductor tends to increase as the frequency increases, due to a skin effect in which the current distribution becomes non-uniform at high frequencies and flows intensively in the surface layer (skin) region of the conductor. That is, it is known that the parasitic resistance as the inductor element increases almost in proportion to the square root of the frequency due to the skin effect. Therefore, in order to reduce the resistance by reducing the resistance of the conductor, it is effective to increase the sectional area of the surface layer region where the current distribution is concentrated. However, it is desirable to increase the surface layer cross-sectional area without increasing the occupied volume in the integrated circuit as much as possible. The embodiment shown in FIG. 3 realizes an increase in the outer peripheral layer 32 without increasing the cross-sectional area of the conductor 1,
Moreover, the striped structure is formed in the same direction as the longitudinal direction 30 so as not to extend the current (propagation) path which causes the efficiency deterioration. As described above, the outer surface layer 3 of the conductor 1
Due to the effect of increasing the area of the surface layer (skin) region where the current distribution is concentrated by the uneven structure provided in 2, it is possible to reduce the increase in the parasitic resistance in the high frequency region due to the decrease in the effective current density.
Power can be efficiently supplied and signals can be received efficiently, and as a result, extremely large L and Q values can be realized. By configuring the integrated magnetic element described in the present embodiment, the loss due to the parasitic resistance of the conductor can be reduced.
The main characteristics of the small inductor element such as the value and the Q value can be improved, and a highly reliable high-performance high-frequency integrated circuit can be realized. Note that the results described here are only examples of the effectiveness of the present invention, and by implementing the present invention, other high-performance integrated circuits requiring an inductor element function can be realized. .

<Embodiment 4> FIG. 4 is a schematic view showing an example of the structure of an integrated magnetic element according to the present invention, in which a part of the embodiment shown in FIG. . In FIG. 4, 2 is a magnetic material, 40 is a high electric resistance region formed on the surface layer of the magnetic material 2, and 41 is a high electric resistance region formed from the surface layer of the magnetic material 2 to the center of the cross section. That is, as shown in FIG.
The structure has high electric resistance regions 40 and 41 which are larger than the average specific resistance value of the magnetic body 2. FIG. 4 merely shows a schematic configuration of a main part of the present invention, and basically uses the same material configuration as that of the embodiment shown in FIG. 1A. In general, eddy currents are induced in a magnetic material that has received an electromagnetic induction magnetic field, resulting in performance degradation such as deterioration of the efficiency of an inductor element and the frequency characteristics of an L value. There is. It is known that the eddy current loss relating to the magnetic material can be reduced by suppressing the flow of the eddy current in the magnetic material, that is, by increasing the electric resistance. Therefore, in order to reduce the eddy current loss by increasing the resistance of the magnetic material, the specific resistance value (specific resistance value) of the magnetic material is increased, or the path cross-sectional area in the magnetic material serving as the eddy current path is reduced. That is effective. The present invention implements the former measure of increasing the specific resistance value, and minimizes the influence on the magnetic performance of the magnetic body 2 such as high permeability and soft magnetism, and efficiently reduces the eddy current loss. For this purpose, a high electric resistance region limited to a part of the magnetic body 2 was formed. The high electric resistance regions 40 and 41 are irradiated with reactive active particles such as radicals composed of oxygen or nitrogen or charged particles such as ions even at the same time as the formation of the magnetic body 2 or after the formation of the magnetic body 2. It can be realized without problems by existing techniques, such as performing compounding treatment with high electrical resistance by injecting. Needless to say, it is important to select and combine the most appropriate material, shape, number, arrangement, and forming method for such a high electric resistance region depending on the shape and arrangement of the conductor and the magnetic material. As described above, since the electric resistance in a part of the magnetic body 2 is increased, generation and propagation of the eddy current induced in the magnetic body 2 by the electromagnetic induction magnetic field are suppressed, and the eddy current loss is reduced. It is possible to reduce the performance degradation such as the deterioration of the efficiency of the inductor element and the frequency characteristic of the L value, and as a result, it was possible to realize extremely large L value and Q value especially in a high frequency range. As described above, the integrated magnetic element structure exemplified in the present embodiment can reduce the loss due to the eddy current generation in the magnetic material, and can efficiently reduce the L value and the Q value. The main characteristics as an inductor element can be improved, and a highly reliable and high-performance high-frequency integrated circuit can be realized. It should be noted that the results described in the present embodiment are merely examples of the effectiveness of the present invention, and by implementing the present invention, other high-performance integrated circuits requiring an inductor element function can be obtained. It can be realized.

Embodiment 5 FIG. 5 is a schematic view showing an example of the configuration of an integrated magnetic element according to the present invention, in which a part of the integrated magnetic element shown in FIG. is there. In FIG. 5, reference numeral 2 denotes a magnetic body, and reference numerals 50 and 51 denote cross-sectional area reduction regions formed in the magnetic body 2. As shown in the drawing, a part of the magnetic body 2 is configured to have cross-sectional area reduction regions 50 and 51 which are reduced as compared with the average cross-sectional area of the magnetic body 2. FIG. 4 merely shows a schematic configuration of a main part of the present invention, and basically uses the same material configuration as that of the embodiment shown in FIG. 1A. As described above, in general, an eddy current is induced in a magnetic material that has received an electromagnetic induction magnetic field, and as a result, performances such as deterioration of the efficiency of the inductor element and the frequency characteristics of the L value are deteriorated. There are significant losses that cannot be ignored. It is known that the eddy current loss relating to the magnetic material can be reduced by suppressing the flow of the eddy current in the magnetic material, that is, by increasing the electric resistance. Therefore, in order to reduce the eddy current loss by increasing the resistance of the magnetic material, the specific resistance value (specific resistance value) of the magnetic material is increased, or the path cross-sectional area in the magnetic material serving as the eddy current path is reduced. That is effective. The present invention implements the latter measure of reducing the cross-sectional area of the path, and minimizes the influence on the magnetic performance of the magnetic body 2 such as high permeability soft magnetism, and efficiently reduces the eddy current loss. In order to do so, a cross-sectional area reduction region limited to a partial region of the magnetic body 2 was formed. The cross-sectional area reduction areas 50 and 51
Can be realized without any problem both at the time of forming the magnetic body 2 and after the formation of the magnetic body 2 by applying an existing technique such as embedding using a mask pattern or etching. Needless to say, it is important to select and combine the most appropriate shape, number, arrangement, and formation method of such cross-sectional area reduction regions according to the shape and arrangement of the conductor and the magnetic material. As described above, since the cross-sectional area of a part of the magnetic body 2 is reduced, the generation and propagation of the eddy current induced in the magnetic body 2 by the electromagnetic induction magnetic field are suppressed. Thus, it is possible to reduce the performance degradation such as the deterioration of the efficiency of the inductor element and the frequency characteristic of the L value, and as a result, it was possible to realize extremely large L value and Q value, especially even in a high frequency range. As described above, the integrated magnetic element structure according to the present invention can reduce the loss due to the eddy current generation in the magnetic body, and can efficiently reduce the main characteristics as a small inductor element such as L value and Q value. , And a highly reliable and high-performance high-frequency integrated circuit can be realized. It should be noted that the results described here are only examples of the effectiveness of the present invention, and by implementing the present invention, it is possible to realize other high-performance integrated circuits that require an inductor element function. It is. The above-described first to fifth embodiments have been described taking an example of application to a high-frequency integrated circuit.
In addition to this, the present invention can be applied to an integrated circuit in a wider frequency range, and the present invention can be applied to micro-machining related devices such as a magnetic recording device and a magnetic drive mechanism and other various fine drive components. It goes without saying that it can be applied. In addition, even when the substrate is changed to a compound semiconductor substrate such as SiC or GaAs other than Si or an insulating substrate, or when a conductor or a magnetic material is formed of a plurality of materials, characteristics such as inductance are trimmed. Even if the function is added and improved, it does not depart from the gist of the present invention.

[0012]

As is clear from the first to fifth embodiments, the integrated magnetic element of the present invention can realize an electric circuit including an inductor element having extremely high characteristics. Further, the integrated magnetic element of the present invention is extremely effective in realizing various integrated circuit elements including a high-performance high-frequency integrated circuit with high controllability and reliability. Therefore, the industrial utility value by implementing the present invention is extremely large.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an example of a configuration of an integrated magnetic element exemplified in Embodiment 1 of the present invention.

FIG. 2 is a schematic diagram illustrating an example of a configuration of an integrated magnetic element exemplified in Embodiment 2 of the present invention.

FIG. 3 is a schematic diagram illustrating an example of a configuration of an integrated magnetic element exemplified in Embodiment 3 of the present invention.

FIG. 4 is a schematic view showing an example of a configuration of an integrated magnetic element exemplified in Embodiment 4 of the present invention.

FIG. 5 is a schematic diagram showing an example of a configuration of an integrated magnetic element exemplified in a fifth embodiment of the present invention.

FIG. 6 is a schematic view showing an example of a configuration of a conventional integrated magnetic element.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Conductor 1a ... Magnetic-core solenoid 1b ... Magnetic-core solenoid 1c ... Linear solenoid coil (magnetic-core solenoid) 2 ... Magnetic body 2a, 2b, 2c, 2d ... The area | region which opposes through the space | gap in a magnetic body 3 ... air gap in the magnetic body 4 ... direction of current at a certain moment 5 ... direction of electromagnetic induction magnetic field at a certain moment 5a, 5b, 5c, 5d ... direction of electromagnetic induction magnetic field at a certain moment 20 ... both ends 21a, 21b of a conductor Conductor for use 30 ... Longitudinal direction of conductor 31 ... Cross section of conductor intersecting in the longitudinal direction 32 ... Outer peripheral surface layer of conductor cross section intersecting in the longitudinal direction 40 ... High electric resistance region formed on surface layer of magnetic material 41 ... Cross section of magnetic material High electric resistance regions formed up to the center 50, 51: reduced cross-sectional area formed in the magnetic material 60: terminal lead-out conductor

Claims (5)

[Claims] 1. A conductor capable of generating an electromagnetic induction magnetic field, a magnetic body disposed close to the conductor and capable of controlling the intensity of the electromagnetic induction magnetic field, and capable of supplying power to the conductor and receiving an electromagnetic induction signal. A power supply signal receiving means, and an integrated magnetic element configured at least by a substrate that constructs the conductor, the magnetic body, and the power supply signal receiving means as an electronic circuit, wherein the conductor is connected through a gap in the magnetic body. An integrated magnetic element, wherein an electromagnetic induction magnetic field generated in the region is arranged near the facing region so that the directions of the electromagnetic induction magnetic fields are opposite to each other. 2. The integrated magnetic element according to claim 1, wherein
From both ends of the conductor or a required position other than the both ends, a structure capable of electrically connecting to the power supply signal receiving means, or from both ends of the conductor and a required position other than the both ends, An integrated magnetic element having a structure that can be electrically connected to the power supply signal receiving means. 3. The integrated magnetic element according to claim 1, wherein the outer peripheral surface layer of the conductor cross section that intersects the longitudinal direction of the conductor has an uneven structure. 4. The integrated magnetic element according to claim 1, wherein a part of the magnetic body has a region where the electric resistance of the magnetic body is large. . 5. The integrated magnetic element according to claim 1, wherein a part of the magnetic material is provided with a reduced area of the cross-sectional area of the magnetic material.