JP2000077912A - Connection structure of dielectric waveguide line - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a connection structure having an excellent transmission characteristic about a structure which orthogonally crosses and connects laminated dielectric waveguide lines capable of being formed in a dielectric substrate. SOLUTION: In these dielectric waveguide lines 6A and 6B consisting of a pair of main conductor layers 2 and 3 inserting a dielectric substrate 1 between them, two lines of penetration conductors groups 4 for side walls formed by connecting the main conductor layers 2 and 3 with less than 1/2 signal wavelength repeated interval in the transmission direction of a high frequency signal and with prescribed width and sub-conductor layers 5 formed in parallel with the layers 2 and 3 and connected with the groups 4, one of the layers 2 and 3 is overlapped and arranged so as to orthogonally cross the transmission directions of the high frequency signals and also a window 7 for connection is formed on the layers 2 and 3 of the overlapped parts. This makes a connection structure with an excellent transmission characteristic which has small transmission loss.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection structure of a dielectric waveguide line for transmitting a high-frequency signal in a microwave band, a millimeter wave band or the like, and more particularly, to a structure for connecting two orthogonal dielectric waveguide lines. The present invention relates to a connection structure for connecting dielectric waveguide lines.

[0002]

2. Description of the Related Art In recent years, researches on mobile communication and inter-vehicle radar using a high frequency signal in a microwave band, a millimeter wave band or the like have been actively conducted. In these high-frequency circuits, transmission lines for transmitting high-frequency signals are required to be small and have small transmission loss. In particular, since it is advantageous in terms of miniaturization if it can be formed on or in a substrate constituting a high-frequency circuit, conventionally, such a transmission line is a strip line, a microstrip line, a coplanar line, or a dielectric waveguide. Tracks and the like have been used.

[0003] Of these, strip lines, microstrip lines, and coplanar lines are composed of a dielectric substrate, a line conductor layer, and a ground (ground) conductor layer. An electromagnetic wave of a high-frequency signal propagates through the body substrate. These lines have no problem for signal transmission up to the 30 GHz band, but have a problem that transmission loss easily occurs at 30 GHz or higher.

On the other hand, the transmission line of the waveguide type is 30 GHz.
This is advantageous in that the transmission loss is small even in the millimeter wave band of z or more. A dielectric waveguide line has been proposed as a transmission line that can be formed in a dielectric multilayer substrate, utilizing the excellent transmission characteristics of such a waveguide.

For example, in Japanese Patent Application Laid-Open No. 6-53711, a waveguide in which a dielectric substrate is sandwiched between a pair of main conductor layers, and a side wall is formed by a plurality of via holes arranged in two rows connecting the main conductor layers. Pipe lines have been proposed. In this waveguide line, a region in the conductor wall is used as a signal transmission line by surrounding four sides of a dielectric material with a pseudo conductor wall formed by a pair of main conductor layers and via holes. According to such a configuration, the configuration becomes very simple, and the overall size of the apparatus can be reduced.

Further, the present inventor has proposed a dielectric waveguide line having a multilayer structure formed in a dielectric substrate in Japanese Patent Application No. 8-229925. This is called a laminated waveguide, and the above-described dielectric waveguide line is formed by a dielectric layer, a pair of main conductor layers, and a group of through conductors. By forming the conductor layer, the side wall as an electric wall is reinforced. In the above-described dielectric waveguide line, when an electric field that is not parallel to the through conductor exists in the waveguide, electric field leakage occurs from the side wall. It is an excellent device that does not cause any significant electric field leakage.

[0007]

In general, when a high-frequency circuit is formed by using transmission lines, particularly when a feed line or the like of an array antenna is formed, the transmission lines are connected to each other in a wiring circuit of the transmission lines. Alternatively, it is necessary to provide a branch.

However, since the line conductor layer of the strip line, the microstrip line, and the coplanar line is not completely covered with the ground conductor layer, if a branch is provided in the middle of the transmission line, electromagnetic waves are emitted from the branch.
There is a problem that transmission loss increases.

[0009] Further, as the dielectric waveguide line, for example, an NRD guide having a structure in which a dielectric line is sandwiched between two ground conductor plates and a portion other than the dielectric line between the ground conductor plates is filled with air. There is. In order to provide a branch therefor, a method of forming a directional coupler by coupling two bent lines is used.

However, if the line has a bent portion, a different propagation mode may occur depending on the shape of the line, resulting in an increase in transmission loss. In addition, dielectric lines are usually made of fluororesin or the like, but those used in high-frequency regions have a problem that the dimensions of the line are small, so that it is difficult to process bent portions and the like and mass production is difficult. Was. Further, there is a problem that it is difficult to form a wiring for a high-frequency circuit on or in a dielectric substrate.

An ordinary waveguide has a structure in which an electromagnetic wave propagates in a space surrounded by a metal wall. Since there is no loss due to a dielectric, a loss at a high frequency is small, and even if there is a branch, radiation occurs. Although there is no loss, there is a problem that the size is larger than that of a transmission line using a dielectric. In contrast, although the dielectric constant in the waveguide can be produced at a size of 1 / √ε _r of ε dielectric dielectric waveguide filled with the _r normal waveguide, which is also a dielectric substrate Alternatively, there is a problem that it is difficult to form it in a substrate.

Further, in a dielectric waveguide line proposed in Japanese Patent Application Laid-Open No. 6-53711, a signal transmission line surrounded by pseudo conductor walls formed by a pair of conductor layers and two rows of via holes. When a branch is simply provided in a line, there is a problem that a transmission loss increases due to disturbance of an electromagnetic field.

Therefore, in order to form a high-frequency circuit by forming a wiring circuit of a transmission line provided with a branch for forming a feed line or the like of an array antenna in the dielectric substrate, the wiring circuit can be formed in the dielectric substrate. There has been a demand for a branch structure of a dielectric waveguide line which does not emit electromagnetic waves and has a small transmission loss.

Although the dielectric waveguide line can be freely formed and disposed in the plane direction of the dielectric substrate, the dielectric waveguide line is formed vertically for miniaturization and high integration. It is necessary to realize a connection that can easily connect the waveguide lines.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a dielectric waveguide line which can be easily manufactured by a conventional multilayering technique, in which a dielectric waveguide line is formed in a dielectric substrate. It is an object of the present invention to provide a connection structure of dielectric waveguide lines which can easily connect dielectric waveguide lines formed by being vertically stacked so as to be orthogonal to each other.

Another object of the present invention is to form a dielectric substrate by crossing and coupling two dielectric waveguide lines without being radiated or leaked of electromagnetic waves of a high-frequency signal.
It is an object of the present invention to provide a connection structure for a dielectric waveguide line which can be connected to three T-shaped or orthogonal three lines with small transmission loss and good transmission characteristics and can be branched.

[0017]

The present inventor has studied the above problems, and as a result, has found that the main conductor layer above the dielectric waveguide line formed on the lower layer side in the dielectric substrate. And two dielectric waveguide lines are stacked one on top of the other to share a part of the main conductor layer below the dielectric waveguide line formed on the upper layer side so as to be orthogonal to it. The upper and lower dielectric waveguide lines are electromagnetically coupled and connected by providing a window for coupling high-frequency signals as a non-formed portion of the main conductor layer in a part of the shared main conductor layer. I found what I could do.

According to this connection structure, the high-frequency signal input from one of the dielectric waveguide lines is transmitted through the coupling window in the two directions at the same phase in the other dielectric waveguide line on the other output side. Can be propagated. The coupling window, which is a conductor-free portion provided between two waveguide lines, is conventionally called a Bethe hole in a waveguide line,
This is the same as that used in a branch structure or a directional coupler.

The present inventor has proposed that the width of the dielectric waveguide line at the connecting portion between the two dielectric waveguide lines is increased or reduced so that the portion is used as a matching portion for impedance matching. It has also been found that reflection of a high-frequency signal due to impedance discontinuity can be reduced.

The connection structure of the dielectric waveguide of the present invention is as follows.
A pair of main conductor layers sandwiching the dielectric substrate, and a repetition interval of less than half the signal wavelength in the transmission direction of the high-frequency signal;
And two rows of side wall penetrating conductor groups formed by electrically connecting the main conductor layers with a predetermined width in a direction orthogonal to the transmission direction, and formed between the main conductor layers in parallel with the main conductor layers. A sub-conductor layer electrically connected to the side wall through conductor group, and a dielectric for transmitting a high frequency signal by a region surrounded by the main conductor layer, the side wall through conductor group and the sub conductor layer. Two body waveguide lines, one of the main conductor layers being overlapped so that the transmission direction of the high-frequency signal is orthogonal, and a coupling window formed in the main conductor layer in the overlapped portion. It is a feature.

Further, the connection structure of the dielectric waveguide line according to the present invention, in the above structure, is arranged such that the dielectric waveguide is located at a position not more than the guide wavelength of the high-frequency signal in the transmission direction from the center of the coupling window. A through conductor group for an end face formed by electrically connecting the main conductor layers at an interval of less than half the signal wavelength in a direction orthogonal to the transmission direction of the pipeline, and a main conductor layer between the main conductor layers And an end face sub-conductor layer electrically connected to the sub-conductor layer and the end face through conductor group.

Further, in the connection structure for a dielectric waveguide line according to the present invention, in each of the above-described structures, the two rows of side wall penetrations of the dielectric waveguide line at a portion where the dielectric waveguide lines are overlapped. The width of the conductor group is wider than the predetermined width.

Further, the connection structure of the dielectric waveguide line according to the present invention, in each of the above-described structures, is a structure of the pair of main conductor layers of the dielectric waveguide line at a portion where the dielectric waveguide line is overlapped. The interval is narrower than the intervals at other parts.

According to the connection structure of the dielectric waveguide line of the present invention, the first dielectric waveguide line and the second dielectric waveguide line which are disposed so as to be orthogonal to each other are arranged. Provided,
Since the coupling window is provided as a conductor non-formed portion in the main conductor layer at the portion where both are overlapped, the two dielectric waveguide lines are coupled by an electromagnetic field, and input from one of the dielectric waveguide lines. The high frequency signal propagates to the other dielectric waveguide line via the coupling window. Since there are two directions that can be propagated in the other dielectric waveguide line, the high-frequency signal propagates in the two directions and is branched into three directions in accordance with the transmission direction of the original dielectric waveguide line. Becomes

Further, according to the connection structure of the dielectric waveguide line of the present invention, in the above configuration, the end face through conductor group and the end face sub-conductor layer are formed at predetermined positions from the center of the coupling window. Therefore, when they are formed on one of the dielectric waveguide lines, a high-frequency signal can be branched in a T-shape. Further, when they are formed on both of the dielectric waveguide lines, a high-frequency signal can be propagated in an L-shape.

Further, according to the connection structure of the dielectric waveguide lines of the present invention, in each of the above-described configurations, the width of at least one of the dielectric waveguide lines at the portion where the dielectric waveguide lines are overlapped, that is, the width, By increasing the width of the side wall penetrating conductor group in the direction orthogonal to the transmission direction, or by reducing its thickness, that is, by narrowing the interval between the pair of main conductor layers,
By reducing the discontinuity of the impedance of the dielectric waveguide line at the connection portion, it is possible to realize connection with low reflection and transmission loss of a high-frequency signal. Such widening and thinning may be applied to both dielectric waveguide lines, or may be applied in combination.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A connection structure of a dielectric waveguide according to the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic perspective view for explaining a configuration example of a dielectric waveguide line used in the present invention. In FIG. 1, reference numeral 1 denotes a dielectric substrate, 2 and 3 denote a pair of main conductor layers sandwiching the dielectric substrate 1, and 4 denotes a signal wavelength of 2 in the signal transmission direction.
Two rows of side wall penetrations formed so as to electrically connect between the pair of main conductor layers 2 and 3 with a repetition interval c of less than 1 and a predetermined width b in a direction perpendicular to the signal transmission direction. It is a conductor group. Reference numeral 5 denotes main conductor layers 2 and 3 for electrically connecting through conductors forming each column of the side wall through conductor group 4 to each other.
The sub-conductor layer is formed in parallel with the sub-conductor layer. 6 is a pair of the main conductor layers 2 and 3, the side wall through conductor group 4, and the sub conductor layer 5
Is a dielectric waveguide line formed by: By further forming the sub-conductor layer 5 in the region surrounded by the pair of main conductor layers 2 and 3 and the through-hole conductor group 4 for the side wall, when viewed from inside the dielectric waveguide line 6, The side walls are formed into a fine lattice shape by the side wall through conductor group 4 and the sub-conductor layer 5, so that electromagnetic waves in various directions are shielded.

As shown in FIG. 1, a pair of main conductor layers 2 and 3 are formed at positions sandwiching a dielectric substrate 1 having a predetermined thickness a. It is formed on the upper and lower surfaces sandwiching at least the transmission line forming position. A large number of through conductors, such as through-hole conductors and via-hole conductors, for electrically connecting the main conductor layers 2 and 3 are provided between the main conductor layers 2 and 3, and these large number of through conductors form two rows of side walls. A through conductor group 4 is formed.

As shown, the two rows of through conductor groups 4
They are formed at a predetermined repetition interval c of less than half the signal wavelength in the transmission direction of the high-frequency signal, that is, the line forming direction, and at a predetermined constant interval (width) b in a direction orthogonal to the transmission direction. As a result, the dielectric waveguide line 6
Are formed.

Here, there is no particular limitation on the thickness a of the dielectric substrate 1, that is, the distance between the pair of main conductor layers 2 and 3.
In the example of FIG. 1, the portion corresponding to the H-plane of the dielectric waveguide line 6 is the main conductor layers 2 and 3, and the portion corresponding to the E-plane is the through-hole conductor group for the side wall. 4 and the sub-conductor layer 5. Further, if the thickness a is about twice as large as the interval b, the portion corresponding to the E surface of the dielectric waveguide line 6 is the main conductor layers 2 and 3, and the portion corresponding to the H surface is the side wall conductor group 4 and Each of the sub-conductor layers 5 is formed.

Further, by setting the interval c to be less than half the signal wavelength, an electric wall can be formed by the side wall through conductor group 4. This spacing c is preferably less than one quarter of the signal wavelength.

Since a TEM wave can propagate between the pair of main conductor layers 2 and 3 arranged in parallel, the distance c between the through conductors in each row of the group of side wall through conductors 4 is ２ of the signal wavelength λ.
If it is larger than (λ / 2), the electromagnetic wave leaks from between the side wall penetrating conductor groups 4 even if the electromagnetic wave is supplied to the dielectric waveguide line 6, and the pseudo waveguide formed here Does not propagate along the track. However, if the distance c between the side wall through conductor groups 4 is smaller than λ / 2, an electric side wall is formed, and the electromagnetic wave can propagate in a direction perpendicular to the dielectric waveguide line 6. It cannot be reflected and propagates in the signal transmission direction of the dielectric waveguide line 6 while being reflected. As a result, according to the configuration as shown in FIG. 1, the cross-sectional area surrounded by a pair of main conductor layers 2 and two rows of penetrating conductor groups 4 for side walls and sub-conductor layers 5 is a region of a × b size. Becomes the dielectric waveguide line 6.

In the embodiment shown in FIG.
Are formed in two rows, but the through conductor groups 4 for side walls are arranged in four rows or six rows, and pseudo conductor walls by the through conductor groups 4 for side walls are formed in two or three layers. Leakage of electromagnetic waves from the conductor wall can be prevented more effectively.

According to such a dielectric waveguide line 6,
Since the transmission line is formed by a dielectric waveguide, the dielectric substrate 1
Its waveguide size when the relative dielectric constant and epsilon _r is the magnitude of 1 / √ε _r of conventional waveguide. Therefore, it is possible to reduce the size of the high-frequency circuit can reduce the waveguide size enough to be larger the dielectric constant epsilon _r of the material constituting the dielectric substrate 1, high-density wiring is formed The dielectric waveguide line 6 can also be used as a multilayer wiring board, a package for storing semiconductor elements, or a transmission line of an inter-vehicle radar.

The through conductors forming the side wall through conductor group 4 are arranged at a repetition interval c of less than half the signal wavelength as described above, and this interval c realizes good transmission characteristics. In order to achieve this, it is desirable to set a constant repetition interval. However, if the interval is less than half the signal wavelength, the interval may be appropriately changed or some values may be combined.

The dielectric substrate 1 constituting such a dielectric waveguide line 6 is not particularly limited as long as it functions as a dielectric and has characteristics that do not hinder transmission of a high-frequency signal. However, the dielectric substrate 1 is desirably made of ceramics from the viewpoint of accuracy in forming the transmission line and easiness of manufacturing.

As such ceramics, ceramics having various relative dielectric constants are known.
In order to transmit a high-frequency signal by the dielectric waveguide according to the present invention, it is preferable that the dielectric waveguide is a paraelectric. This is because ferroelectric ceramics generally have large dielectric loss and high transmission loss in a high frequency range. Therefore, the relative dielectric constant ε _r of the dielectric substrate 1 is suitably about 4 to 100.

Since the line width of a wiring layer formed on a multilayer wiring board, a package for housing semiconductor elements or an inter-vehicle radar is generally at most about 1 mm, a material having a relative dielectric constant of 100 is used, and When used so that the surface, that is, the magnetic field distribution is such that the magnetic field winds parallel to the upper surface,
The minimum frequency that can be used is calculated as 15 GHz, and can be used even in the microwave band.

On the other hand, dielectric consisting of commonly resin used as the dielectric substrate 1, since the dielectric constant epsilon _r of about 2, when the line width is 1mm to use and not about 100 GHz or higher Can not be done.

Further, among such paraelectric ceramics, many have very small dielectric loss tangents, such as alumina and silica, but not all paraelectric ceramics can be used. In the case of a dielectric waveguide, there is almost no loss due to the conductor, and most of the loss during signal transmission is due to the dielectric. The loss α (dB / m) due to the dielectric is expressed as follows. α = 27.3 × tan δ / [λ / {1- (λ / λc) ² }
^1/2 ] where tan δ: dielectric loss tangent of the dielectric λ: wavelength in the dielectric λc: cut-off wavelength According to the standardized rectangular waveguide (WRJ series) shape, ｛1- ( λ / λc) ² ｝ ^1/2 is about 0.75.

Therefore, the transmission loss is practically usable.
In order to make it 100 dB / m or less, it is necessary to select a dielectric so that the following relationship is satisfied. f × ε _r ^1/2 × tan δ ≦ 0.8 In the equation, f is the frequency (GHz) of the high-frequency signal to be used.

Examples of such a dielectric substrate 1 include alumina ceramics, glass ceramics, and aluminum nitride ceramics. The dielectric substrate 1 is formed into a slurry by adding and mixing an appropriate organic solvent and a solvent to the ceramic raw material powder, for example, and forming the slurry into a sheet by employing a conventionally known doctor blade method, calender roll method, or the like. To obtain a plurality of ceramic green sheets. Thereafter, each of these ceramic green sheets is subjected to appropriate punching and laminated, and in the case of alumina ceramic, 15
00-1700 ° C, 850-1000 for glass ceramics
℃, 1600-1900 for aluminum nitride ceramics
It is manufactured by firing at a temperature of ° C.

The pair of main conductor layers 2 and 3 are formed, for example, when the dielectric substrate 1 is made of alumina ceramics.
Suitable for metal powder such as tungsten, alumina, silica,
An oxide such as magnesia, an organic solvent, a solvent, etc. are added and mixed to form a paste, which is then printed on a ceramic green sheet by a thick film printing method so as to completely cover at least the transmission line. It is formed by firing at a high temperature of 1600 ° C. to have a thickness of 10 to 15 μm or more. The metal powder is preferably copper, gold, and silver in the case of glass ceramics, and tungsten and molybdenum in the case of aluminum nitride ceramics. The thickness of the main conductor layers 2 and 3 is generally about 5 to 50 μm.

The through conductor constituting the side wall through conductor group 4 may be formed of, for example, a via hole conductor or a through hole conductor. The cross-sectional shape may be a polygon, such as a rectangle or a rhombus, in addition to a circle which is easy to manufacture. These through conductors are formed, for example, by embedding a metal paste similar to that of the main conductor layers 2 and 3 in a through hole formed by punching a ceramic green sheet and then firing the same at the same time as the dielectric substrate 1. The through conductor has a diameter of 50 to 300
μm is appropriate. Next, FIG. 2 shows an example of an embodiment of a connection structure of a dielectric waveguide line of the present invention using such a dielectric waveguide line.

FIG. 2 shows a state in which the other dielectric waveguide line is overlapped on the end of one dielectric waveguide line so that the transmission direction of the high-frequency signal is orthogonal, and FIG. FIG. 2A is an exploded perspective view showing a state before connecting a dielectric waveguide line, FIG. 2B is a perspective view showing a state connecting a dielectric waveguide line, and FIG. FIG. 5 is a perspective view of a state in which a dielectric waveguide line is indicated by an outline for facilitation. In these figures, the same parts as those in FIG. 1 are denoted by the same reference numerals. However, the display of the dielectric substrate is omitted. Also, a part of the main conductor layer 2 is shown in a cut-away and transparent state.

In FIG. 2, reference numerals 2 and 3 denote a pair of main conductor layers,
Is a through conductor group for side walls in two rows, 5 is a sub-conductor layer, and 6A
6B is a dielectric waveguide line. These two dielectric waveguide lines 6A and 6B are arranged so that one of the main conductor layers overlaps so that the transmission direction of the high-frequency signal is orthogonal. In this example, the main conductor layer 2 on the upper side of the dielectric waveguide line 6A and the main conductor layer 3 on the lower side of the dielectric waveguide line 6B are arranged so as to overlap each other. The main windows 2 and 3 of the overlapping portions are provided with coupling windows 7 as non-formed portions of the conductor layers.
(Shown by hatching in the main conductor layers 2 and 3).

Here, the main conductor layer 2 of the dielectric waveguide line 6A and the main conductor layer 3 of the dielectric waveguide line 6B are shared in the overlapping portion, and the shared main conductor layer is used. The formation of the coupling window 7 is preferable in that good transmission characteristics of a high-frequency signal can be obtained at the connection portion.

In this example, one end of one dielectric waveguide line 6A is connected to the other dielectric waveguide line 6B, and an end face is formed in the dielectric waveguide line 6A. The end face through conductor group 8 and the end face sub-conductor layer 9 are formed. The end face through conductor group 8 is located at a position below the guide wavelength of the high frequency signal in the transmission direction from the center of the coupling window 7 provided in the main conductor layer 2 of the dielectric waveguide line 6A. The main conductor layers 2 and 3 are electrically connected at a repetition interval of less than half the signal wavelength in a direction orthogonal to the transmission direction of 6A. Further, the sub-conductor layer 9 for the end face is composed of the main conductor layer 2.
3 is formed in parallel with the main conductor layers 2 and 3 and the sub conductor layer 5
And it is electrically connected with the through conductor group 8 for end faces.

As described above, the two dielectric waveguide lines 6A
6B are perpendicular to each other, one of the main conductor layers 2 and 3 is overlapped and arranged one above the other, and a coupling window 7 is formed in the main conductor layers 2 and 3 at the overlapped portion to form two dielectric waveguides. Pipe line 6
A and 6B are coupled by an electromagnetic field through a coupling window 7. In this example, a branch structure of the T-shaped dielectric waveguide line is formed, and the port of the dielectric waveguide line 6A is formed.
The high-frequency signal input from 10 propagates through the coupling window 7 to the dielectric waveguide line 6B, branches in the two directions in the same phase, and is output to the ports 11 and 12, respectively.

The end face through conductor group 8 and the end face sub-conductor layer 9 are not formed on the dielectric waveguide line 6A, and the dielectric waveguide line 6A and the dielectric waveguide line 6B are not formed. Are connected to form a branch structure of a cross-shaped dielectric waveguide line. In this case, the high-frequency signal input from the port 10 of the dielectric waveguide 6A propagates to the dielectric waveguide 6B via the coupling window 7 and the transmission through the dielectric waveguide 6A. Then, the two waveguides are branched into the same phase and transmitted to ports 11 and 12, respectively, so that one waveguide can be branched into three orthogonal waveguides. It has a branched structure.

According to such a connection structure of a dielectric waveguide line of the present invention, the thickness of the dielectric substrate 1 is smaller than that of a conventional connection structure of a waveguide line in which coupling is performed by a feed pin. There are no restrictions on characteristics due to Before the green sheets to be the dielectric substrate 1 are laminated, two dielectric waveguide lines 6 are stacked.
Since the pattern of the coupling window 7 can be formed when printing the main conductor layers 2 and 3 where the portions A and 6B overlap, high productivity and inexpensive manufacturing are possible.

Further, according to the connection structure of the dielectric waveguide line of the present invention, the electromagnetic wave energy propagating through one dielectric waveguide line 6A is transmitted through the coupling window 7 to the other dielectric waveguide line. Since it is directly coupled with the electromagnetic wave energy of 6B, energy loss such as heat generation due to the resistance component does not occur, and a connection structure having good transmission characteristics with small transmission loss is obtained.

When the coupling window 7 is formed in the connection structure of the dielectric waveguide line of the present invention, its position, shape and size are determined by the frequency characteristics required for the connection structure.
The amount of coupling and the amount of reflection are complicatedly involved. Therefore, the position, shape, size, and the like of the coupling window 7 having desired connection characteristics are determined by repeatedly performing calculations by electromagnetic field analysis so as to satisfy the required frequency characteristics.

In the connection structure of the dielectric waveguide of the present invention, the through conductor group 8 for the end face and the sub-conductor layer 9 for the end face are formed like the dielectric waveguide 6B shown in FIG. In this case, the position may be obtained by electromagnetic field analysis according to the required characteristics. Any position may be used as long as the characteristics are satisfied. However, there is an optimum position from the center of the coupling window 7 to a position which is equal to or less than the guide wavelength. This is because the phase at the center of the coupling window 7 is adjusted according to the position of the end face, and the phase is repeated for each guide wavelength λg.

The end of the dielectric waveguide line 6A formed by the end face through conductor group 8 and the end face sub-conductor layer 9 may be formed according to the purpose.
It is not always necessary to form them. Further, if necessary, it may be formed on the dielectric waveguide line 6B. For example, as shown in FIG. 2, the end portion of the dielectric waveguide line 6A is formed, and the through conductor group 8 for the end surface and the sub-conductor layer 9 for the end surface are also formed on the port 11 side of the dielectric waveguide line 6B. When the end is formed, the electromagnetic wave input from the port 10 side of the dielectric waveguide line 6A propagates through the coupling window 7 to the dielectric waveguide line 6B, It is output from the port 12 side of the waveguide 6B. In other words, in this case, the lower dielectric waveguide line 6A and the upper dielectric waveguide line 6B are L
It becomes a connection structure connected in a letter shape.

Next, FIG. 3 shows another embodiment of the connection structure of the dielectric waveguide line according to the present invention.

FIG. 3 shows a connection structure of a dielectric waveguide line similar to that shown in FIG. 2 in which the width of the lower dielectric waveguide line and the width of the coupling window in the connection portion are increased. FIG. 3A is an exploded perspective view showing a state before connecting a dielectric waveguide line, FIG. 3B is a perspective view showing a state connecting a dielectric waveguide line, FIG. 3C is a perspective view showing a state in which the dielectric waveguide line is represented by an outline for easy understanding. In these figures, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals. In addition, the illustration of the dielectric substrate is omitted, and a part of the main conductor layer 2 is broken and shown in a see-through state.

In FIG. 3, reference numerals 2 and 3 denote a pair of main conductor layers,
Is a through conductor group for side walls in two rows, 5 is a sub-conductor layer, and 6A
6B is a dielectric waveguide line. These two dielectric waveguide lines 6A and 6B are arranged so that one of the main conductor layers overlaps so that the transmission direction of the high-frequency signal is orthogonal. In this example, the main conductor layer 2 on the upper side of the dielectric waveguide line 6A and the main conductor layer 3 on the lower side of the dielectric waveguide line 6B are arranged so as to overlap each other. Reference numeral 8 denotes a through conductor group for an end face, 9 denotes a sub-conductor layer for an end face, and 10 to 12 denote ports.

In this example, the dielectric waveguide lines 6A and 6B
The width of the through-hole conductor group 4 for the side walls in the two rows of the lower dielectric waveguide line 6A at the portion where the layers are overlapped is made larger than the predetermined width (b shown in FIG. 1). In both of the main conductor layers 2 and 3 which are arranged in an overlapping manner, a coupling window 7 (shown by hatching in the main conductor layers 2 and 3) is provided as a non-formed portion of the conductor layer. ing. The width of this coupling window 7,
Here, the opening dimension in the width direction of the two rows of through-hole conductor groups 4 for the side walls of the dielectric waveguide line 6A is also equal to the width of the dielectric waveguide line 6A.
The width is increased so as to match the width of the through conductor group 4 for the side wall of the row.

As a result, the two dielectric waveguide lines 6A
6B are coupled and connected by an electromagnetic field via a coupling window 7. In this manner, the width of the connection portion of the dielectric waveguide lines 6A and 6B, in this case, the widthwise interval between the two rows of side wall through conductor groups 4 of the dielectric waveguide line 6A, and the coupling window 7 By appropriately changing the size of the dielectric waveguide line 6A
The reflection of high-frequency signals at the 6B connection portion can be reduced, and a low-loss connection structure can be obtained.

As described above, the dielectric waveguide line 6A
The configuration in which the width of the two rows of side wall through conductor groups 4 in the portion where the 6B is superimposed is wider than the predetermined width b is not the lower dielectric waveguide line 6A but the upper dielectric waveguide. Track 6
B may be applied to both dielectric waveguide lines 6A and 6A.
B may be applied. Further, when the width of the two rows of side wall through conductor groups 4 in the connecting portion is made wider than the predetermined width b, the width to be widened is 1 to 1 of the predetermined width b.
What is necessary is just to set in the range of 2 times.

Next, FIG. 4 shows still another example of the embodiment of the connection structure of the dielectric waveguide lines according to the present invention.

FIG. 4 shows a connection structure of a dielectric waveguide line similar to the example shown in FIG. 2 in which the thickness of the lower dielectric waveguide line at the connection portion is reduced.
4A is an exploded perspective view showing a state before connecting a dielectric waveguide line, FIG. 4B is a perspective view showing a state connecting a dielectric waveguide line, and FIG. FIG. 6 is a perspective view showing a state in which a dielectric waveguide line is displayed with an outline in order to facilitate the operation. In these figures, the same parts as those in FIGS. 1 to 3 are denoted by the same reference numerals. In addition, the illustration of the dielectric substrate is omitted, and a part of the main conductor layer 2 is broken and shown in a see-through state.

In FIG. 4, reference numerals 2 and 3 denote a pair of main conductor layers,
Is a through conductor group for side walls in two rows, 5 is a sub-conductor layer, and 6A
6B is a dielectric waveguide line. These two dielectric waveguide lines 6A and 6B are arranged so that one of the main conductor layers overlaps so that the transmission direction of the high-frequency signal is orthogonal. In this example, the main conductor layer 2 on the upper side of the dielectric waveguide line 6A and the main conductor layer 3 on the lower side of the dielectric waveguide line 6B are arranged so as to overlap each other. Reference numeral 7 denotes a coupling window, 8 denotes a through conductor group for an end face, 9
Is an end face sub-conductor layer, and 10 to 12 are ports.

In this example, the dielectric waveguide lines 6A and 6B
By forming the main conductor layer 2 of the lower dielectric waveguide line 6A at the portion where the layers are overlapped with each other so as to be closer to the main conductor layer 3 side in a stepwise manner, the thickness of the dielectric waveguide line 6A is reduced. The distance between the pair of main conductor layers 2 and 3 (dielectric waveguide line 6
When the main conductor layer 2 of the dielectric waveguide line 6A and the main conductor layer 3 of the dielectric waveguide line 6B are shared, the main conductor layer 3 of the dielectric waveguide line 6A is used.
And the distance between the main conductor layers 3 of the dielectric waveguide line 6B (the distance between the main conductor layers 3) is narrower than the distance between other parts (a shown in FIG. 1).

Note that the main conductor layers 2 of the dielectric waveguide line 6A and the main conductor layers 2 of the dielectric waveguide line 6B are formed between the main conductor layers 2 having the heights changed stepwise. Between)
As shown in FIG. 4, electrical connection may be made by a conductor layer formed in the height direction, or connection may be made by a main conductor layer connection through conductor group described later.

As a result, the two dielectric waveguide lines 6A
6B are coupled and connected by an electromagnetic field via a coupling window 7. Then, the thickness near the connection portion of the dielectric waveguide line, here, the main conductor layer 2 side of the dielectric waveguide line 6A is formed at a different height to form the pair of main conductor layers 2.3. By appropriately changing the interval (or the interval between the main conductor layer 3 of the dielectric waveguide line 6A and the main conductor layer 3 of the dielectric waveguide line 6B) to be narrower than other portions, the dielectric The reflection of the high-frequency signal at the connection between the waveguide lines 6A and 6B can be reduced, and a low-loss connection structure can be obtained.

FIG. 5 shows still another embodiment of the connection structure of the dielectric waveguide line according to the present invention.

FIG. 5 shows a connection structure of a dielectric waveguide line similar to the example shown in FIG. 2 in which the thickness of the upper dielectric waveguide line at the connection portion is reduced.
5A is an exploded perspective view showing a state before connecting a dielectric waveguide line, FIG. 5B is a perspective view showing a state where a dielectric waveguide line is connected, and FIG. FIG. 6 is a perspective view showing a state in which a dielectric waveguide line is displayed with an outline in order to facilitate the operation. In these figures, the same parts as those in FIGS. 1 to 4 are denoted by the same reference numerals. In addition, the illustration of the dielectric substrate is omitted, and a part of the main conductor layer 2 is broken and shown in a see-through state.

In FIG. 5, reference numerals 2 and 3 denote a pair of main conductor layers,
Is a through conductor group for side walls in two rows, 5 is a sub-conductor layer, and 6A
6B is a dielectric waveguide line. These two dielectric waveguide lines 6A and 6B are arranged so that one of the main conductor layers overlaps so that the transmission direction of the high-frequency signal is orthogonal. In this example, the main conductor layer 2 on the upper side of the dielectric waveguide line 6A and the main conductor layer 3 on the lower side of the dielectric waveguide line 6B are arranged so as to overlap each other. Reference numeral 7 denotes a coupling window, 8 denotes a through conductor group for an end face, 9
Is an end face sub-conductor layer, and 10 to 12 are ports.

In this example, the dielectric waveguide lines 6A and 6B
By forming the main conductor layer 2 of the dielectric waveguide line 6B on the upper layer side in a portion where the layers are overlapped with each other in a stepwise manner close to the main conductor layer 3 side, the thickness of the dielectric waveguide line 6B is reduced, that is, The interval between the pair of main conductor layers 2 and 3 is narrower than the interval (a shown in FIG. 1) in other portions.

Here, the main conductor layer 2 is a dielectric waveguide line 6
A portion at the connection portion of A.6B is formed on a surface different from that at the other portion, in this example, on the same plane as one of the sub-conductor layers 5, and the main conductor layer 2 and the other portion at the connection portion are formed. Are electrically connected to the main conductor layer 2 by a through conductor group 13 for connecting the main conductor layer. Like the penetrating conductor group 4 for the side wall and the penetrating conductor group 8 for the end face, the penetrating conductor group 13 for connecting the main conductor layer has a signal wavelength of two minutes in a direction orthogonal to the transmission direction of the dielectric waveguide line 6B. The main conductor layers 2 having different heights may be formed so as to be electrically connected at a repetition interval of less than 1.

In place of the main conductor layer connecting through conductor group 13, the main conductor layers 2 having different heights may be electrically connected by conductor layers formed in the height direction.

As a result, the two dielectric waveguide lines 6A
6B are coupled and connected by an electromagnetic field via a coupling window 7. In this way, the thickness near the connection portion of the dielectric waveguide line, here, the main conductor layer 2 side of the dielectric waveguide line 6B is formed at different heights to form the pair of main conductor layers 2.3. By appropriately changing the spacing to be smaller than the spacing at other portions, reflection of high-frequency signals at the connection between the dielectric waveguide lines 6A and 6B can be reduced, and a low-loss connection structure can be obtained.

As described above, the dielectric waveguide lines 6A and 6A
The structure in which the interval between the pair of main conductor layers 2 and 3 in the portion where B is overlapped is smaller than the interval in the other portions is that the lower dielectric waveguide line 6A or the upper dielectric waveguide line 6B And may be applied to both dielectric waveguide lines 6A and 6B at the same time. Further, by changing the height of the main conductor layer 3 of the lower dielectric waveguide line 6A and the height of the main conductor layer 3 of the upper dielectric waveguide line 6B, a pair of main conductor layers 2 and 3 are formed. May be changed, or these may be appropriately combined.

When the interval between the pair of main conductor layers 2 and 3 at the connection portion is made narrower than the interval at the other portion, the interval to be narrowed is 1/2 to the interval a at the other portion. What is necessary is just to set it in the range of 1 time.

[0078]

[Example 1] In the connection structure of the dielectric waveguide line according to the present invention having the structure shown in FIG. 2, the transmission characteristics of the transmission line including the T-shaped branch are the level of the S parameter and the frequency of the phase. The characteristics were calculated by the finite element method.
The conditions for the calculation are as follows. Pure copper having a conductivity of 5.8 × 10 ⁷ (1 / Ωm) is used for the material of the main conductor layers 2 and 3 and the through conductor, and borosilicate glass 75% by weight is used for the dielectric substrate 1. And a 25% by weight of alumina were sintered to produce a sintered ceramic body having a relative dielectric constant of 5 and a dielectric tangent of 0.001. The thickness a of the dielectric substrate 1 was 0.62 mm, and the diameter of the through conductor was 0.1.
mm, the repetition interval c of the side wall through conductor group 4 is 0.25 m.
m, the predetermined width b of the side wall through conductor group 4 is 1.2 mm,
The length of the transmission line was 2.25 mm.

The sub-conductor layer 5 is 0.154 from the main conductor layer 3.
mm, 0.308 mm, 0.462 mm at three positions to form a four-layer structure, and the dimensions and shape of the coupling window 7 are 1.2 mm
× 1.2 mm square.

The through conductor group 8 for the end face of the dielectric waveguide line 6A is formed by extending the through conductor group 4 requiring one side wall of the other dielectric waveguide line 6B. And the repetition interval were the same as those of the penetrating conductor group 4 for side walls. The position of the end face sub-conductor layer 9 was the same as that of the sub-conductor layer 5.

FIG. 6A is a diagram showing the frequency characteristics of the level of the S parameter, and FIG. 6B is a diagram showing the frequency characteristics of the phase of the S parameter.
In FIG. 6A, the horizontal axis is frequency (GHz), and the vertical axis is S
The value of the level of S ₁₁ · S ₂₁ · S ₃₁ of the parameters (d
B), and the characteristic curve in the figure shows the frequency characteristic of each S parameter. The horizontal axis represents the frequency (GHz) in FIG. 6 (b), the vertical axis of the S parameter S ₂₁ · S
₃₁ represents the phase value (degree), and the characteristic curve in the figure shows the frequency characteristic of each S parameter.

Here, in the connection structure of the dielectric waveguide line having the configuration shown in FIG. 2, S ₁₁ is a ratio of the power reflected from the power input from the port 10 and returned to the port 10. the, S ₂₁ port 11 to power inputted from the port 10
The ratio of the power output from, S ₃₁ shows a ratio of the power output from port 12 to power inputted from the port 10, respectively.

From the results shown in FIG. 6A, S ₂₁ and S ₃₁
Are almost equal, and it can be seen that the high-frequency signal is transmitted well through the connection. The ratio of S ₂₁ and S ₃₁ is 1 at the calculated frequency range substantially constant: 1. The phase after the branch is the same. S ₁₁ is a design center frequency 77
It has a peak near GHz and is about -15 dB, indicating that the reflection is small.

[0084] On the other hand, from the results shown in FIG. 6 (b), S ₂₁
A characteristic curve showing the phase of S ₃₁ are almost overlapped,
It can be seen that they are in phase.

Example 2 Next, regarding the connection structure of the dielectric waveguide line of the present invention having the structure shown in FIG. 5, the level and phase of the S parameter as the transmission characteristics of the transmission line including the T-shaped branch are described. Was calculated by the finite element method. The conditions for the calculation were the same materials as in [Example 1], the thickness a of the dielectric substrate 1 was 0.62 mm, the diameter of the through conductor was 0.1 mm, and the repetition interval c of the side wall through conductor group 4 was c = 0.25. mm, the predetermined width b of the through conductor group 4 for the side wall b = 1.
2 mm, distance between the pair of main conductor layers 2 and 3 of the dielectric waveguide line 6B at the connection part (thickness of the dielectric waveguide line 6B)
Was set to 0.15 mm, and the main conductor layers 2 formed in steps were connected by through conductors having the same diameter and repetition interval as the side wall through conductor group 4. The length of the transmission line was 2.25 mm.

The end face through conductor group 8 and the end face sub-conductor layer 9 were formed in the same manner as in [Example 1], and the dimensions and shape of the coupling window 7 were 1.5 mm × 1.2 mm square.

The results are shown in FIG. 7 (a) for the frequency characteristic of the level of the S parameter, and FIG. 6 (b) for the frequency characteristic of the phase of the S parameter, as shown in FIG. 7 (a) and FIG. Shown in the figure.

From the results shown in FIG. 7A, S ₂₁ and S ₃₁
Are almost equal, and it can be seen that the high-frequency signal passes through the connecting portion better in a wider band than in the case of [Example 1]. Substantially constant in the frequency range ratio calculated in S ₂₁ and S ₃₁ 1: 1
It has become. The phase after the branch is the same. For S ₁₁ is further reflected is reduced, a -19.5dB at 77GHz by providing the matching portion. Thus, since the provision of the matching portion for the transmission of high frequency signals by reducing the thickness of the dielectric waveguide line at the connecting portion, it becomes small S ₁₁ as compared to the results of EXAMPLE 1, 71 to and the S ₂₁ and S ₃₁ are substantially a constant value in the range of 79 GHz.

[0089] On the other hand, from the results shown in FIG. 7 (b), S ₂₁
It can be seen that the phase of S ₃₁ is in the same phase as the.

[Example 3] In the same manner as in [Example 1], the width of the lower dielectric waveguide line 6A at the connection portion and the coupling window 7
The level characteristics and phase frequency characteristics of the S parameter of the connection structure of the dielectric waveguide line of the present invention having the configuration shown in FIG. reflection of the high frequency power, i.e. the smaller the peak of S _11, it was confirmed that the further reflection is reduced by providing the matching portion.

Further, in the same manner as in [Example 1], the thickness of the lower dielectric waveguide line 6A at the connection portion was reduced.
When the frequency characteristics of the level and the phase of the S parameter were obtained for the connection structure of the dielectric waveguide line of the present invention shown in FIG. 4, the pass band of the high-frequency signal became wider than the result of [Example 1]. It was confirmed that it had excellent connection characteristics.

According to the above results, according to the connection structure of the dielectric waveguide lines of the present invention, the dielectric waveguide lines formed by being vertically stacked in the dielectric substrate so as to be orthogonal to each other are connected to each other. It has been confirmed that the connection can be easily performed with low transmission loss and good transmission characteristics. Also, it was confirmed that two dielectric waveguide lines could be crossed and one line could be connected in a T-shape with good transmission characteristics and branched.

The present invention is not limited to the above-described embodiment, and various changes and improvements can be made without departing from the scope of the present invention.

[0094]

As described in detail above, according to the connection structure of the dielectric waveguide line of the present invention, the mismatch of the characteristic impedance of the dielectric waveguide line before and after the connection portion is obtained by any structure. Because it can be made smaller, the reflection of high-frequency signals at the connection part is reduced, and the propagation mode at the connection part is not disturbed, so that the connection structure of the dielectric waveguide line with small transmission loss and good transmission characteristics I got it.

That is, according to the connection structure of the dielectric waveguide line of the present invention, the dielectric waveguide line of the lower layer, which is vertically arranged in the dielectric substrate so that the transmission directions are orthogonal to each other, At the connection portion of the upper dielectric waveguide line, one of the main conductor layers, that is, the upper main conductor layer above the lower dielectric waveguide line and the lower dielectric waveguide line below the upper dielectric waveguide line. The two dielectric waveguide lines are coupled by an electromagnetic field because the main conductor layer and the main conductor layer are overlapped and a coupling window is formed in the main conductor layer at the overlapped portion. The high-frequency signal input from the pipeline can be propagated to the other dielectric waveguide via the coupling window. Since there are two directions that can be propagated in the other dielectric waveguide line, the high-frequency signal is propagated in the two directions and branched in three directions in accordance with the transmission direction of the original dielectric waveguide line. Can be.

Further, according to the connection structure of the dielectric waveguide line of the present invention, in the above configuration, the end face through conductor group and the end face sub-conductor layer are formed at predetermined positions from the center of the coupling window. Therefore, when they are formed on one of the dielectric waveguide lines, high-frequency signals can be branched in a T-shape, and when they are formed on both dielectric waveguide lines, the high-frequency signals can be formed in an L-shape. Signal can be propagated.

Further, according to the connection structure of the dielectric waveguide lines of the present invention, in each of the above-described structures, the width of at least one of the dielectric waveguide lines at the portion where the dielectric waveguide lines are overlapped, that is, By increasing the width of the side wall through conductor group in the direction orthogonal to the transmission direction, or by reducing the thickness, that is, by reducing the distance between the pair of main conductor layers, the impedance of the dielectric waveguide line at the connection portion is reduced. By making the discontinuity small, it is possible to realize connection with low reflection and transmission loss of a high-frequency signal.

As described above, according to the present invention, in a dielectric waveguide line which can be easily manufactured by the conventional multi-layering technique, the dielectric waveguide lines are formed by being vertically stacked on a dielectric substrate so as to be orthogonal to each other. Thus, it is possible to provide a connection structure of the dielectric waveguide lines which can easily connect the dielectric waveguide lines.

Further, according to the present invention, there is no radiation / leakage of electromagnetic waves of a high-frequency signal, which can be formed in a dielectric substrate, so that two dielectric waveguide lines can be crossed and coupled.
It is possible to provide a connection structure of a dielectric waveguide line that can be branched by connecting the three lines to three T-shaped or orthogonal lines with low transmission loss and excellent transmission characteristics.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view for explaining an example of a dielectric waveguide line used in the present invention.

FIG. 2A is an exploded perspective view showing a state before connecting a dielectric waveguide line in an embodiment of a connection structure of a dielectric waveguide line of the present invention, and FIG. FIG. 3C is a perspective view showing a state where the body waveguide is connected, and FIG. 4C is a perspective view showing a state where the dielectric waveguide is displayed with an outline for easy understanding.

FIG. 3A is an exploded perspective view showing a state before connecting a dielectric waveguide line in another embodiment of the connection structure of the dielectric waveguide line of the present invention, and FIG. FIG. 4 is a perspective view showing a state where the dielectric waveguide lines are connected, and FIG. 4 (c) is a perspective view showing a state where the dielectric waveguide lines are displayed in outline for easy understanding.

FIG. 4A is an exploded perspective view showing a state before connecting a dielectric waveguide line in still another embodiment of the connection structure of the dielectric waveguide line of the present invention, and FIG. () Is a perspective view showing a state where the dielectric waveguide lines are connected, and (c) is a perspective view showing a state where the dielectric waveguide lines are indicated by outlines for easy understanding.

5A is an exploded perspective view showing a state before connecting a dielectric waveguide line in still another example of the embodiment of the connection structure of the dielectric waveguide line of the present invention, FIG. () Is a perspective view showing a state where the dielectric waveguide lines are connected, and (c) is a perspective view showing a state where the dielectric waveguide lines are indicated by outlines for easy understanding.

6A is a diagram illustrating frequency characteristics of S parameter levels in a connection structure of a dielectric waveguide line according to the present invention, and FIG. 6B is a diagram illustrating frequency characteristics of S parameter phases. .

FIG. 7A is a diagram illustrating a frequency characteristic of an S parameter level in a connection structure of a dielectric waveguide line according to the present invention, and FIG. 7B is a diagram illustrating a frequency characteristic of a phase of the S parameter. .

[Explanation of symbols]

 1 ... dielectric substrate 2, 3 ... main conductor layer 4 ... penetrating conductor group for side wall 5 ... sub-conductor layer 6 ... dielectric waveguide line 6A... First (lower layer side) dielectric waveguide line 6B... Second (upper layer side) dielectric waveguide line 7... Coupling window 8. .End face through-conductor group 9... End face sub-conductor layer

Claims (4)

[Claims] 1. A pair of main conductor layers sandwiching a dielectric substrate, a repetition interval of less than half of a signal wavelength in a transmission direction of a high-frequency signal, and a predetermined width in a direction orthogonal to the transmission direction. Two rows of penetrating conductor groups for side walls formed by electrically connecting the main conductor layers, and formed between the main conductor layers in parallel with the main conductor layer and electrically connected to the penetrating conductor groups for side wall; Two dielectric waveguide lines for transmitting a high-frequency signal by a region surrounded by the main conductor layer, the side wall through conductor group, and the sub-conductor layer. A connection structure for a dielectric waveguide line, wherein one of the main conductor layers is overlapped so that transmission directions are orthogonal to each other, and a coupling window is formed in the main conductor layer at the overlapped portion. 2. A signal wavelength less than half the signal wavelength in a direction orthogonal to the transmission direction of the dielectric waveguide line at a position below the guide wavelength of the high-frequency signal in the transmission direction from the center of the coupling window. An end face through conductor group formed by electrically connecting the main conductor layers at an interval of; a sub conductor layer and the end face through conductor group formed parallel to the main conductor layer between the main conductor layers; 2. The connection structure for a dielectric waveguide line according to claim 1, further comprising an end face sub-conductor layer that is electrically connected. 3. A width of the two rows of through conductor groups for the side walls of the dielectric waveguide line at a portion where the dielectric waveguide lines are overlapped is larger than the predetermined width. 3. The connection structure for a dielectric waveguide line according to claim 1 or 2. 4. The distance between said pair of main conductor layers of said dielectric waveguide line at a portion where said dielectric waveguide lines are overlapped is smaller than the distance at other portions. 3. A connection structure for a dielectric waveguide line according to claim 2.