JP3522120B2 - Connection structure of dielectric waveguide line - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection structure of dielectric waveguide lines for transmitting high frequency signals in the microwave band, millimeter wave band, etc. The present invention relates to a connection structure of a dielectric waveguide line formed by connecting.

[0002]

2. Description of the Related Art In recent years, research on mobile communication and inter-vehicle radar using high-frequency signals in the microwave band, millimeter wave band, etc. has been actively pursued. In these high frequency circuits, transmission lines for transmitting high frequency signals are required to be small and have low transmission loss. In particular, since it is advantageous in terms of downsizing if it can be formed on or in a substrate that constitutes a high-frequency circuit, strip line, microstrip line, coplanar line, and dielectric waveguide have been conventionally used as such transmission lines. Railroads have been used.

Among these, the strip line, microstrip line, and coplanar line are composed of a dielectric substrate, a line conductor layer, and a ground (ground) conductor layer, and the space around the line conductor layer and the ground conductor layer and the dielectric. An electromagnetic wave of a high frequency signal propagates through the body substrate. These lines have no problem for signal transmission up to the 30 GHz band, but have a problem that transmission loss tends to occur at 30 GHz or higher.

On the other hand, the waveguide type transmission line is 30 GH
It is advantageous in that the transmission loss is small even in the millimeter wave band of z or more. A dielectric waveguide line has been proposed as a transmission line that can be formed in a dielectric multilayer substrate by taking advantage of the excellent transmission characteristics of such a waveguide.

For example, in Japanese Unexamined Patent Publication No. 6-53711, a waveguide in which a dielectric substrate is sandwiched between a pair of main conductor layers and side walls are formed by a plurality of via holes arranged in two rows connecting the main conductor layers Pipelines have been proposed. In this waveguide line, a region inside the conductor wall is used as a signal transmission line by surrounding the dielectric material on four sides with a pair of main conductor layers and a pseudo conductor wall composed of via holes. According to such a configuration, the configuration is very simple and the overall size of the device can be reduced.

Furthermore, the present inventor proposed in Japanese Patent Application No. 8-229925 a dielectric waveguide line having a multilayer structure formed in a dielectric substrate. This is called a laminated waveguide, and the dielectric waveguide line as described above is formed by a dielectric layer, a pair of main conductor layers, and a through conductor group, and a sub conductor is added in addition to the through conductor group. By forming the conductor layer, the side wall as an electric wall is reinforced. In the above-mentioned dielectric waveguide line, when an electric field that is not parallel to the through conductor exists in the waveguide, the electric field leaks from the side wall, but this laminated waveguide has a sub-conductor layer. It is excellent in that no electric field leakage occurs.

[0007]

Generally, when forming a high frequency circuit using transmission lines, particularly when forming a feeder line of an array antenna, etc., the transmission lines are connected to each other in a wiring circuit of the transmission lines. Or, it is necessary to provide a branch.

However, since the line conductor layer of the strip line, the microstrip line, and the coplanar line is not completely covered by the ground conductor layer, if a branch is provided in the middle of the transmission line, radiation of electromagnetic waves occurs from the branch.
There is a problem that the transmission loss becomes large.

As the dielectric waveguide line, for example, an NRD guide having a structure in which the dielectric line is sandwiched between two ground conductor plates and the portion between the ground conductor plates other than the dielectric line is filled with air. There is. In order to provide a branch to this, a method of forming a directional coupler by connecting two bent lines is used.

However, when the line has a bent portion, different propagation modes may occur depending on the shape of the bent portion, resulting in a large transmission loss. In addition, although the dielectric line is usually made of fluororesin, etc., especially for those used in the high frequency region, the dimension of the line is small, so there is a problem that the bending part is difficult to process and mass production is difficult. It was Further, there is a problem that it is difficult to form the wiring of the high frequency circuit on or in the dielectric substrate.

In addition, a normal waveguide has a structure in which electromagnetic waves propagate in a space surrounded by a metal wall. Since there is no loss due to a dielectric material, the loss at high frequencies is small, and even if there is a branch, it is radiated. Although there is no loss, there is a problem that the size becomes larger than that of a transmission line using a dielectric. On the other hand, a dielectric waveguide in which a dielectric with a relative permittivity of ε _r is filled in the waveguide can be manufactured with a size of 1 / √ε _r of a normal waveguide, but this is also on the dielectric substrate. Alternatively, there is a problem that it is difficult to form in the substrate.

Furthermore, in a dielectric waveguide line as proposed in Japanese Patent Laid-Open No. 6-53711, a signal transmission line surrounded by a pseudo conductor wall by a pair of conductor layers and two rows of via holes is used. If the line is simply provided with a branch, the electromagnetic field is disturbed, resulting in a large transmission loss.

Therefore, in order to construct a high frequency circuit by producing a wiring circuit of a transmission line in which a branch for forming a feed line of an array antenna is formed in the dielectric substrate, it can be formed in the dielectric substrate, There has been a demand for a branched structure of a dielectric waveguide line that emits no electromagnetic waves and has a small transmission loss.

Further, the dielectric waveguide lines can be freely formed and arranged in the plane direction of the dielectric substrate, but for the purpose of downsizing and high integration, the dielectric waveguide lines are arranged one above the other. It is necessary to realize a connection that can easily connect the waveguide lines to each other.

The present invention has been devised in view of the above circumstances, and an object thereof is to provide a dielectric waveguide line which can be easily manufactured by a conventional multi-layering technique with each other in a dielectric substrate. It is an object of the present invention to provide a dielectric waveguide line connection structure capable of easily connecting dielectric waveguide lines that are vertically stacked to be orthogonal to each other.

Further, an object of the present invention is to be formed in a dielectric substrate without radiation and leakage of an electromagnetic wave of a high frequency signal, and by connecting two dielectric waveguide lines so as to cross each other.
An object of the present invention is to provide a connection structure of a dielectric waveguide line that can connect and branch three lines to three T-shaped or orthogonal lines with small transmission loss and good transmission characteristics.

[0017]

As a result of repeated studies on the above problems, the present inventor has found that the main conductor layer on the upper side of the dielectric waveguide line formed on the lower layer side in the dielectric substrate. And two dielectric waveguide lines are vertically stacked so as to share a part of the main conductor layer on the lower side of the dielectric waveguide line formed on the upper layer side so as to be orthogonal thereto. The upper and lower dielectric waveguide lines are electromagnetically coupled and connected by forming a high-frequency signal coupling window as a non-formed portion of the main conductor layer in a part of the shared main conductor layer. I found that I could do it.

According to this connection structure, a high-frequency signal input from one of the dielectric waveguide lines is bi-directional in the same phase in the other dielectric waveguide line on the output side orthogonal to each other through the coupling window. Can be propagated. As described above, the coupling window, which is the conductor non-forming portion provided between the two waveguide lines, is conventionally called a Bethe hole in the waveguide line.
It is similar to that used in the branch structure or the directional coupler.

Further, the inventor of the present invention enlarges the width or the thickness of the dielectric waveguide line at the connecting portion of the two dielectric waveguide lines to make that portion a matching part for impedance matching. It was also found that reflection of high frequency signals due to impedance discontinuity can be reduced.

The connection structure of the dielectric waveguide line of the present invention is
A pair of main conductor layers sandwiching the dielectric substrate, and a repeating interval of less than half the signal wavelength in the transmission direction of the high frequency signal,
In addition, two rows of sidewall through conductor groups formed by electrically connecting the main conductor layers with a predetermined width in a direction orthogonal to the transmission direction, and formed between the main conductor layers in parallel with the main conductor layers. A dielectric for transmitting a high-frequency signal by a region surrounded by the main conductor layer, the side wall through conductor group and the sub conductor layer, the sub conductor layer being electrically connected to the side wall through conductor group. Two body waveguide lines are arranged so that one of the main conductor layers is overlapped so that the transmission directions of the high frequency signals are orthogonal to each other, and a coupling window is formed in the main conductor layer at the overlapped portion, and From the center of the coupling window of the dielectric waveguide line to which the high frequency signal is input, to a position equal to or less than the guide wavelength of the high frequency signal in the transmission direction, and to the half of the signal wavelength in the direction orthogonal to the transmission direction. The main conductor layers are electrically connected at intervals of less than 1. And forming end faces through-conductor group,
An end face sub-conductor layer is formed between the main conductor layers in parallel with the main conductor layer and is electrically connected to the sub-conductor layer and the end face through conductor group.

[0021]

Further, the connection structure of the dielectric waveguide line of the present invention has the above-mentioned structure, wherein the two rows of through conductors for the side walls of the dielectric waveguide line in the portion where the dielectric waveguide lines are overlapped. The width of the group is made wider than the predetermined width.

In addition, the connection structure of the dielectric waveguide lines of the present invention has the above-mentioned structure, in which the distance between the pair of main conductor layers of the dielectric waveguide lines in the portion where the dielectric waveguide lines are overlapped. Is narrower than the interval in other parts.

According to the connection structure of the dielectric waveguide line of the present invention, the first dielectric waveguide line and the second dielectric waveguide line which are arranged so as to be orthogonal to the first dielectric waveguide line are provided. Provided,
A coupling window is provided as a conductor non-formation portion in the main conductor layer at the overlapping portion of both, and the wavelength is less than the guide wavelength of the high frequency signal in the transmission direction from the center of the coupling window of the dielectric waveguide line to which the high frequency signal is input. , The signal wavelength is 2 in the direction orthogonal to the transmission direction.
An end face through conductor group formed by electrically connecting the main conductor layers at intervals of less than one-half, and a sub conductor layer and an end face through conductor group formed in parallel with the main conductor layer between the main conductor layers. Since the sub conductor layer for the end face electrically connected is formed,
The two dielectric waveguide lines are coupled by an electromagnetic field, and the high frequency signal input from one of the dielectric waveguide lines propagates to the other dielectric waveguide line through the coupling window and the other. Since there are two directions that can propagate in the dielectric waveguide line of
The high frequency signal propagates in the two directions and is branched into a T shape. Further, when the end face through conductor group and the end face double conductor layer are formed on both of the dielectric waveguide lines, the high frequency signal can be propagated in an L shape.

[0025]

Further, according to the connection structure of the dielectric waveguide line of the present invention, in the above structure, at least one of the dielectric waveguide lines in the portion where the dielectric waveguide lines are superposed has the width, that is, the transmission. The width of the sidewall through conductor group in the direction orthogonal to the direction is widened, or the thickness thereof is made thin, that is, the interval between the pair of main conductor layers is narrowed, so that the impedance discontinuity of the dielectric waveguide line at the connection portion becomes discontinuous. Can be reduced to realize a connection with high frequency signal reflection and low transmission loss. Such widening and thinning may be applied to both dielectric waveguide lines or a combination of these.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION A connection structure for a dielectric waveguide line according to the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic perspective view for explaining a structural example of a dielectric waveguide line used in the present invention. In FIG. 1, 1 is a dielectric substrate, 2 and 3 are a pair of main conductor layers sandwiching the dielectric substrate 1, and 4 is a signal wavelength of 2 in the signal transmission direction.
Two rows of side wall penetrations formed to electrically connect between the pair of main conductor layers 2 and 3 with a repetition interval c of less than 1 / th and a predetermined width b in the direction orthogonal to the signal transmission direction. It is a conductor group. Further, 5 is a main conductor layer 2/3 which electrically connects the through conductors forming each row of the sidewall through conductor group 4.
Is a sub-conductor layer formed in parallel with. Reference numeral 6 denotes the pair of main conductor layers 2 and 3, the sidewall through conductor group 4 and the sub conductor layer 5.
It is a dielectric waveguide line formed by. When the sub conductor layer 5 is further formed in the region surrounded by the pair of main conductor layers 2 and 3 and the side wall through conductor group 4 as described above, when viewed from the inside of the dielectric waveguide line 6. The side wall is formed into a fine grid by the side wall through conductor group 4 and the sub conductor layer 5, and electromagnetic waves in various directions are shielded.

As shown in FIG. 1, a pair of main conductor layers 2 and 3 are formed at positions sandwiching a dielectric substrate 1 having a predetermined thickness a, and the main conductor layers 2 and 3 are formed on the dielectric substrate 1. It is formed on the upper and lower surfaces sandwiching at least the transmission line formation position. Further, a large number of through conductors such as through-hole conductors and via-hole conductors for electrically connecting the main conductor layers 2 and 3 are provided between the main conductor layers 2 and 3, and these two through conductors are used for two rows of sidewalls. The through conductor group 4 is formed.

The two rows of through conductor groups 4 are, as shown in the drawing,
The high-frequency signal is formed in the transmission direction, that is, in the line formation direction, with a predetermined repeating interval c that is less than one-half of the signal wavelength and a predetermined constant interval (width) b in the direction orthogonal to the transmission direction. As a result, this dielectric waveguide line 6
Forming an electrical side wall at.

Here, there is no particular limitation on the thickness a of the dielectric substrate 1, that is, the distance between the pair of main conductor layers 2 and 3, but when the single mode is used, the distance b is 2 times.
It is preferable to make it about one-half or about two times. In the example of FIG. 1, the portion corresponding to the H surface of the dielectric waveguide line 6 is the main conductor layers 2 and 3, and the portion corresponding to the E surface is the side wall through conductor group. 4 and the sub conductor layer 5 respectively. Further, if the thickness a is about twice as large as the distance b, the portion corresponding to the E surface of the dielectric waveguide line 6 is the main conductor layers 2 and 3, and the portion corresponding to the H surface is the sidewall through conductor group 4 and. Each of the sub conductor layers 5 will be formed.

By setting the interval c to be less than half the signal wavelength, the side wall through conductor group 4 can form an electrical wall. This spacing c is preferably less than a quarter of the signal wavelength.

Since a TEM wave can propagate between the pair of main conductor layers 2 and 3 arranged in parallel, the spacing c between the through conductors in each row of the sidewall through conductor group 4 is 1/2 the signal wavelength λ.
If it is larger than (λ / 2), the electromagnetic wave leaks from between the side wall through conductor groups 4 even if the electromagnetic wave is fed to the dielectric waveguide line 6, and the pseudo waveguide formed here. Does not propagate along the track. However, when the distance c between the sidewall through conductor groups 4 is smaller than λ / 2, an electrical sidewall is formed and electromagnetic waves can propagate in the direction perpendicular to the dielectric waveguide 6. However, it cannot be reflected and is propagated in the signal transmission direction of the dielectric waveguide line 6 while being reflected. As a result, according to the configuration as shown in FIG. 1, a region surrounded by the pair of main conductor layers 2 and 3 and the two rows of side wall through conductor groups 4 and sub conductor layers has a cross-sectional area of size a × b. Serves as the dielectric waveguide line 6.

In the embodiment shown in FIG. 1, the sidewall through conductor group 4
Is formed in two rows. By arranging the side wall through conductor groups 4 in four rows or six rows, and forming the pseudo conductor walls by the side wall through conductor groups 4 in double or triple layers. It is also possible to more effectively prevent leakage of electromagnetic waves from the conductor wall.

According to such a dielectric waveguide line 6,
Since the transmission line is a dielectric waveguide, the dielectric substrate 1
When the relative permittivity of is ε _r , the waveguide size is 1 / √ε _r of a normal waveguide. Therefore, the larger the relative permittivity ε _r of the material forming the dielectric substrate 1 is, the smaller the size of the waveguide can be, and the size of the high frequency circuit can be reduced. It is possible to use the dielectric waveguide line 6 of a size that can be used as a transmission line for a multilayer wiring board, a package for housing semiconductor elements, or an inter-vehicle radar.

As described above, the through conductors forming the sidewall through conductor group 4 are arranged at the repeating interval c which is less than one half of the signal wavelength, and this interval c realizes good transmission characteristics. In order to achieve this, it is desirable to set a constant repeating interval, but if the interval is less than ½ of the signal wavelength, it may be appropriately changed or some values may be combined.

The dielectric substrate 1 constituting such a dielectric waveguide line 6 is not particularly limited as long as it functions as a dielectric and has characteristics that do not hinder the transmission of high frequency signals. However, it is desirable that the dielectric substrate 1 be made of ceramics from the viewpoint of accuracy and ease of manufacturing when forming the transmission line.

Ceramics having various relative dielectric constants have been known as such ceramics.
In order to transmit a high frequency signal by the dielectric waveguide line according to the present invention, a paraelectric material is desirable. This is because ferroelectric ceramics generally have large dielectric loss and high transmission loss in the high frequency region. Therefore, it is suitable that the dielectric constant ε _r of the dielectric substrate 1 is about 4 to 100.

In general, since the line width of a wiring layer formed in a multilayer wiring board, a package for housing a semiconductor element, or an inter-vehicle radar is about 1 mm at the maximum, a material having a relative permittivity of 100 is used and an upper portion is H. When used so that the surface, that is, the magnetic field, has an electromagnetic field distribution that winds parallel to the upper surface,
The minimum frequency that can be used is calculated as 15 GHz, and it can be used in the microwave band region.

On the other hand, a dielectric made of resin generally used as the dielectric substrate 1 has a relative permittivity ε _r of about 2, so if the line width is 1 mm, it must be about 100 GHz or more. Will not be possible.

Although many paraelectric ceramics such as alumina and silica have a very small dielectric loss tangent, not all paraelectric ceramics can be used. In the case of the dielectric waveguide line, there is almost no loss due to the conductor, and most of the loss during signal transmission is due to the dielectric. The loss α (dB / m) due to the dielectric is expressed as follows. α = 27.3 × tan δ / [λ / {1- (λ / λc) ² }
^1/2 ] In the formula, tan δ: dielectric loss tangent of the dielectric λ: wavelength in the dielectric λc: cutoff wavelength According to the standardized rectangular waveguide (WRJ series) shape, {1- ( λ / λc) ² } ^1/2 is about 0.75.

Therefore, the transmission loss can be put to practical use-
In order to achieve 100 dB / m or less, it is necessary to select a dielectric material so that the following relationship holds. f × ε _r ^1/2 × tan δ ≦ 0.8 In the formula, f is the frequency (GHz) of the high frequency signal used.

Examples of such a dielectric substrate 1 include alumina ceramics, glass ceramics and aluminum nitride ceramics. The dielectric substrate 1 made of these is formed into a slurry form by adding and mixing an appropriate organic solvent / solvent to the ceramic raw material powder, and is formed into a sheet form by adopting the conventionally known doctor blade method, calendar roll method, or the like. By doing so, a plurality of ceramic green sheets are obtained, and then each of these ceramic green sheets is appropriately punched and laminated, and in the case of alumina ceramics, 15
00 to 1700 ℃, 850 to 1000 for glass ceramics
° C, 1600 to 1900 for aluminum nitride ceramics
It is manufactured by firing at a temperature of ℃.

The pair of main conductor layers 2 and 3 are, for example, when the dielectric substrate 1 is made of alumina ceramics,
Alumina, silica, suitable for metal powder such as tungsten
Use a thick film printing method to print on a ceramic green sheet so as to completely cover at least the transmission line, using a paste made by adding and mixing oxides such as magnesia and organic solvents / solvents. It is fired at a high temperature of 1600 ° C. and formed to have a thickness of 10 to 15 μm or more. As the metal powder, copper / gold / silver is suitable for glass ceramics, and tungsten / molybdenum is suitable for aluminum nitride ceramics. The thickness of the main conductor layers 2 and 3 is generally about 5 to 50 μm.

The penetrating conductors forming the side wall penetrating conductor group 4 may be formed of, for example, via-hole conductors or through-hole conductors. The cross-sectional shape may be a polygon such as a rectangle or a rhombus, as well as a circle which is easy to manufacture. These penetrating conductors are formed by, for example, embedding a metal paste similar to that of the main conductor layers 2 and 3 in a penetrating hole formed by punching a ceramic green sheet, and then firing the dielectric substrate 1 at the same time. The through conductor has a diameter of 50 to 300.
μm is suitable. Next, FIG. 2 shows an example of an embodiment of a connection structure for a dielectric waveguide line of the present invention, which uses such a dielectric waveguide line.

FIG. 2 shows an arrangement in which one end of one dielectric waveguide line is connected to the other end of the dielectric waveguide line so that the transmission directions of high frequency signals are orthogonal to each other. a) is an exploded perspective view showing a state before connecting the dielectric waveguide lines, FIG. 2B is a perspective view showing a state where the dielectric waveguide lines are connected, and FIG. It is a perspective view of the state where the dielectric waveguide line was displayed by the outline for simplification. In these figures, the same parts as those in FIG. 1 are designated by the same reference numerals. However, the display of the dielectric substrate is omitted. In addition, a part of the main conductor layer 2 is cut away and is shown in a see-through state.

In FIG. 2, 2 and 3 are a pair of main conductor layers, 4
Is a two-row side wall through conductor group, 5 is a sub-conductor layer, and 6A
6B is a dielectric waveguide line. These two dielectric waveguide lines 6A and 6B are arranged so that one of the main conductor layers is overlapped so that the transmission directions of high frequency signals are orthogonal to each other. In this example, the main conductor layer 2 on the upper side of the dielectric waveguide line 6A and the main conductor layer 3 on the lower side of the dielectric waveguide line 6B are arranged in an overlapping manner. Then, in the main conductor layers 2 and 3 of both of the portions arranged in an overlapping manner, a coupling window 7 is formed as a conductor layer non-formation portion.
(Shown by hatching in the main conductor layers 2 and 3).

Here, the main conductor layer 2 of the dielectric waveguide line 6A and the main conductor layer 3 of the dielectric waveguide line 6B are shared at the overlapping portions, and the shared main conductor layer. It is preferable to form the coupling window 7 in the point that good transmission characteristics of high frequency signals can be obtained at the connection portion.

Further, in this example, one end of the dielectric waveguide line 6A is connected to the other end of the dielectric waveguide line 6B, and an end face is formed on the dielectric waveguide line 6A. The end face through conductor group 8 and the end face sub-conductor layer 9 are formed. The end face penetrating conductor group 8 is disposed at a position equal to or less than the guide wavelength of the high frequency signal in the transmission direction from the center of the coupling window 7 provided in the main conductor layer 2 of the dielectric waveguide line 6A. 6A is formed by electrically connecting the main conductor layers 2 and 3 in a direction orthogonal to the transmission direction of 6A at a repeating interval of less than half the signal wavelength. In addition, the end surface sub-conductor layer 9 is the main conductor layer 2
Sub conductor layer 5 is formed between 3 and 3 in parallel with main conductor layers 2 and 3.
And the end face through conductor group 8 is electrically connected.

Thus, the two dielectric waveguide lines 6A
6B are made orthogonal to each other, one of the main conductor layers 2 and 3 of each other is overlapped and arranged vertically, and a coupling window 7 is formed in the main conductor layers 2 and 3 of the overlapped portions to form two dielectric waveguides. Pipeline 6
A and 6B are coupled by an electromagnetic field through the coupling window 7. In this example, a T-shaped dielectric waveguide line branch structure is formed, and the port of the dielectric waveguide line 6A is formed.
The high-frequency signal input from 10 propagates through the coupling window 7 to the dielectric waveguide line 6B, is branched in the two directions in the same phase, and is output to the ports 11 and 12, respectively.

It should be noted that the end face through conductor group 8 and the end face sub-conductor layer 9 are not formed in the dielectric waveguide line 6A, and the middle of the dielectric waveguide line 6A and the middle of the dielectric waveguide line 6B. By connecting with, a branch structure of a cross-shaped dielectric waveguide line is constructed. In this case, the high-frequency signal input from the port 10 of the dielectric waveguide line 6A is propagated to the dielectric waveguide line 6B via the coupling window 7 and that transmitted through the dielectric waveguide line 6A. Then, it is divided into those which are branched in the two directions in the same phase and are respectively transmitted to the ports 11 and 12, and one of the dielectric waveguide lines that can branch into three lines that intersect at right angles. It has a branched structure.

According to the above-described dielectric waveguide line connection structure of the present invention, the thickness of the dielectric substrate 1 is larger than that of the conventional waveguide line connection structure in which the coupling is performed by the feed pin. There are no restrictions on the characteristics. In addition, before stacking the green sheets to be the dielectric substrate 1, two dielectric waveguide lines 6 are formed.
Since the pattern of the coupling window 7 can be formed when printing the main conductor layers 2 and 3 at the portions where A and 6B overlap, high productivity and low cost manufacturing are possible.

Further, according to the connection structure of the dielectric waveguide line of the present invention, the electromagnetic wave energy propagated through the one dielectric waveguide line 6A is coupled to the other dielectric waveguide line by the coupling window 7. Since it is directly coupled with the electromagnetic wave energy of 6B, an energy loss such as heat generation due to a resistance component does not occur, and a connection structure having a good transmission characteristic with a small transmission loss is obtained.

In the case where the coupling window 7 is formed in the dielectric waveguide line connection structure of the present invention, the position, shape and size of the coupling window 7 are defined by the frequency characteristics required for the connection structure.
The amount of binding and the amount of reflection are complicatedly involved. Therefore, the position, shape, size, etc. of the coupling window 7 having the desired connection characteristics are determined by repeatedly performing calculations by electromagnetic field analysis so as to satisfy the required frequency characteristics.

Further, in the connection structure of the dielectric waveguide line of the present invention, the end face through conductor group 8 and the end face sub-conductor layer 9 are formed like the dielectric waveguide line 6B shown in FIG. In that case, the position may be obtained by electromagnetic field analysis according to the required characteristics, and it may be anywhere as long as the characteristics are satisfied, but there is an optimum position at the position within the guide wavelength from the center of the coupling window 7. This is because the phase at the center of the coupling window 7 is adjusted depending on the position of the end face, and the phase is repeated for each in-tube wavelength λg.

Further, the end portion of the dielectric waveguide line 6A formed by the end face penetrating conductor group 8 and the end face sub-conductor layer 9 may be formed also on the dielectric waveguide line 6B, if necessary. For example, as shown in FIG. 2, the end portion of the dielectric waveguide line 6A is formed, and the end face through conductor group 8 and the end face subconductor layer 9 are also formed on the port 11 side of the dielectric waveguide line 6B. When the end portion is formed by forming the end portion, the electromagnetic wave input from the port 10 side of the dielectric waveguide line 6A propagates to the dielectric waveguide line 6B via the coupling window 7 and the dielectric waveguide line 6B is formed. It is output from the port 12 side of the waveguide 6B. That is, in this case, the lower layer side dielectric waveguide line 6A and the upper layer side dielectric waveguide line 6B are connected in an L shape.

Next, FIG. 3 shows another example of the embodiment of the connection structure of the dielectric waveguide line of the present invention.

FIG. 3 shows that in the connection structure of the dielectric waveguide line similar to the example shown in FIG. 2, the width of the dielectric waveguide line on the lower layer side and the width of the coupling window in the connection portion are widened. 3A is an exploded perspective view showing a state before the dielectric waveguide line is connected, and FIG. 3B is a perspective view showing a state where the dielectric waveguide line is connected. FIG. 3C is a perspective view showing a state in which the dielectric waveguide line is displayed by a contour for easy understanding. In these figures, the same parts as those in FIGS. 1 and 2 are designated by the same reference numerals. Further, the dielectric substrate is not shown, and is shown in a state in which a part of the main conductor layer 2 is cut away and seen through.

In FIG. 3, reference numerals 2-3 designate a pair of main conductor layers, 4
Is a two-row side wall through conductor group, 5 is a sub-conductor layer, and 6A
6B is a dielectric waveguide line. These two dielectric waveguide lines 6A and 6B are arranged so that one of the main conductor layers is overlapped so that the transmission directions of high frequency signals are orthogonal to each other. In this example, the main conductor layer 2 on the upper side of the dielectric waveguide line 6A and the main conductor layer 3 on the lower side of the dielectric waveguide line 6B are arranged in an overlapping manner. Further, 8 is an end face through conductor group, 9 is an end face sub-conductor layer, and 10 to 12 are ports.

In this example, the dielectric waveguide lines 6A and 6B are used.
The widths of the two rows of the side wall through conductor groups 4 of the lower dielectric waveguide 6A in the overlapping portion are wider than the predetermined width (b shown in FIG. 1). Then, coupling windows 7 (shown by hatching in the main conductor layers 2 and 3) are provided in both main conductor layers 2 and 3 of the portions which are arranged so as to overlap each other as non-formation portions of the conductor layers. ing. The width of this coupling window 7,
Here, the opening size in the width direction of the two side wall through conductor groups 4 of the dielectric waveguide line 6A is also equal to that of the dielectric waveguide line 6A.
The width is widened so as to match the width of the through conductor group 4 for the side wall of the row.

As a result, the two dielectric waveguide lines 6A
6B is coupled by an electromagnetic field through the coupling window 7 and connected. As described above, the width of the connecting portion of the dielectric waveguide lines 6A and 6B, here, the widthwise interval between the sidewall through conductor groups 4 of the two rows of the dielectric waveguide lines 6A, and the coupling window 7 are formed. By appropriately changing the size of the dielectric waveguide line 6A.
The reflection of high frequency signals at the 6B connection can be reduced, and a low-loss connection structure can be obtained.

As described above, the dielectric waveguide line 6A
The configuration in which the widths of the sidewall through conductor groups 4 in the two rows in the portion where 6B are overlapped is made wider than the predetermined width b is not the lower dielectric waveguide line 6A but the upper dielectric waveguide. Track 6
B may be applied to both dielectric waveguide lines 6A and 6A.
It may be applied to B. In addition, when the widths of the two groups of sidewall through conductor groups 4 in the connecting portion are made wider than the predetermined width b, the width to be widened is 1 to the predetermined width b.
It may be set in the double range.

Next, FIG. 4 shows still another example of the embodiment of the connection structure of the dielectric waveguide line of the present invention.

FIG. 4 shows a dielectric waveguide line connection structure similar to the example shown in FIG. 2, in which the thickness of the dielectric waveguide line on the lower layer side in the connection portion is reduced.
4A is an exploded perspective view showing a state before connecting the dielectric waveguide lines, FIG. 4B is a perspective view showing a state in which the dielectric waveguide lines are connected, and FIG. FIG. 3 is a perspective view showing a state in which a dielectric waveguide line is displayed with a contour in order to facilitate the process. In these figures, the same parts as those in FIGS. 1 to 3 are designated by the same reference numerals. Further, the dielectric substrate is not shown, and is shown in a state in which a part of the main conductor layer 2 is cut away and seen through.

In FIG. 4, 2 and 3 are a pair of main conductor layers, 4
Is a two-row side wall through conductor group, 5 is a sub-conductor layer, and 6A
6B is a dielectric waveguide line. These two dielectric waveguide lines 6A and 6B are arranged so that one of the main conductor layers is overlapped so that the transmission directions of high frequency signals are orthogonal to each other. In this example, the main conductor layer 2 on the upper side of the dielectric waveguide line 6A and the main conductor layer 3 on the lower side of the dielectric waveguide line 6B are arranged in an overlapping manner. Further, 7 is a coupling window, 8 is an end face through conductor group, 9
Is a sub conductor layer for the end face, and 10 to 12 are ports.

In this example, the dielectric waveguide lines 6A and 6B are used.
By forming the main conductor layer 2 of the lower dielectric waveguide line 6A in the overlapping portion in a stepwise manner toward the main conductor layer 3 side, the thickness of the dielectric waveguide line 6A is reduced, that is, The distance between the pair of main conductor layers 2 and 3 (dielectric waveguide line 6
When the main conductor layer 2 of A and the main conductor layer 3 of the dielectric waveguide line 6B are shared, the main conductor layer 3 of the dielectric waveguide line 6A
And the distance between the main conductor layers 3 of the dielectric waveguide line 6B is narrower than the distance (a shown in FIG. 1) in other portions.

Between the main conductor layers 2 formed by changing the height in a stepwise manner (or between the main conductor layer 2 of the dielectric waveguide line 6A and the main conductor layer 2 of the dielectric waveguide line 6B). (Between)
It may be electrically connected by a conductor layer formed in the height direction as shown in FIG. 4, or may be connected by a main conductor layer connecting through conductor group described later.

As a result, the two dielectric waveguide lines 6A
6B is coupled by an electromagnetic field through the coupling window 7 and connected. In this way, the thickness of the vicinity of the connecting portion of the dielectric waveguide line, here, the main conductor layer 2 side of the dielectric waveguide line 6A is formed to have different heights so that the pair of main conductor layers 2 and 3 are formed. The gap (or the gap between the main conductor layer 3 of the dielectric waveguide line 6A and the main conductor layer 3 of the dielectric waveguide line 6B) is made narrower than the gap at other portions to appropriately change the dielectric substance. The reflection of high frequency signals at the connection between the waveguide lines 6A and 6B can be reduced, and a low-loss connection structure can be obtained.

Next, FIG. 5 shows still another example of the embodiment of the connection structure of the dielectric waveguide line of the present invention.

FIG. 5 shows a dielectric waveguide line connection structure similar to the example shown in FIG. 2, in which the thickness of the dielectric waveguide line on the upper layer side in the connection portion is reduced.
5A is an exploded perspective view showing a state before connecting the dielectric waveguide lines, FIG. 5B is a perspective view showing a state where the dielectric waveguide lines are connected, and FIG. FIG. 3 is a perspective view showing a state in which a dielectric waveguide line is displayed with a contour in order to facilitate the process. In these figures, the same parts as those in FIGS. 1 to 4 are designated by the same reference numerals. Further, the dielectric substrate is not shown, and is shown in a state in which a part of the main conductor layer 2 is cut away and seen through.

In FIG. 5, 2 and 3 are a pair of main conductor layers, 4
Is a two-row side wall through conductor group, 5 is a sub-conductor layer, and 6A
6B is a dielectric waveguide line. These two dielectric waveguide lines 6A and 6B are arranged so that one of the main conductor layers is overlapped so that the transmission directions of high frequency signals are orthogonal to each other. In this example, the main conductor layer 2 on the upper side of the dielectric waveguide line 6A and the main conductor layer 3 on the lower side of the dielectric waveguide line 6B are arranged in an overlapping manner. Further, 7 is a coupling window, 8 is an end face through conductor group, 9
Is a sub conductor layer for the end face, and 10 to 12 are ports.

In this example, the dielectric waveguide lines 6A and 6B are used.
By forming the main conductor layer 2 of the dielectric waveguide line 6B on the upper layer side in the overlapping portion so as to approach the main conductor layer 3 side in a stepwise manner, the thickness of the dielectric waveguide line 6B is reduced, that is, The distance between the pair of main conductor layers 2 and 3 is made narrower than the distance (a shown in FIG. 1) in other portions.

Here, the main conductor layer 2 is the dielectric waveguide line 6
The conductor layer is formed on the surface of the connection portion of A · 6B different from the portion of the other portion, that is, on the same plane as one of the sub-conductor layers 5 in this example, and the main conductor layer 2 and the other portion of the connection portion are formed. The main conductor layer 2 is electrically connected by the main conductor layer connecting through conductor group 13. Like the side wall through conductor group 4 and the end face through conductor group 8, the main conductor layer connecting through conductor group 13 has a signal wavelength divided into two parts in a direction orthogonal to the transmission direction of the dielectric waveguide 6B. The main conductor layers 2 having different heights may be formed so as to be electrically connected at a repeating interval of less than 1.

In place of the main conductor layer connecting through conductor group 13, main conductor layers 2 having different heights may be electrically connected by a conductor layer formed in the height direction.

As a result, the two dielectric waveguide lines 6A
6B is coupled by an electromagnetic field through the coupling window 7 and connected. In this way, the thickness of the vicinity of the connecting portion of the dielectric waveguide line, here, the main conductor layer 2 side of the dielectric waveguide line 6B is formed to have different heights so that the pair of main conductor layers 2 and 3 is formed. By appropriately changing the gap to be narrower than the gap in other parts, reflection of high-frequency signals at the connecting portions of the dielectric waveguide lines 6A and 6B can be reduced, and a low-loss connection structure can be obtained.

As described above, the dielectric waveguide lines 6A.6
The structure in which the distance between the pair of main conductor layers 2 and 3 in the portion where B is overlapped is made narrower than the distance in the other portions is such that the lower-layer side dielectric waveguide line 6A or the upper-layer side dielectric waveguide line 6B. Or both dielectric waveguide lines 6A and 6B at the same time. Further, by changing the height of the main conductor layer 3 of the lower dielectric waveguide line 6A and the height of the main conductor layer 3 of the upper dielectric waveguide line 6B, a pair of main conductor layers 2 and 3 are formed. The intervals may be changed, and these may be appropriately combined.

When the distance between the pair of main conductor layers 2 and 3 in the connecting portion is made narrower than the distance in the other portion, the narrowing distance is 1/2 of the distance a in the other portion. It may be set in the range of 1 time.

[0078]

Example 1 Regarding the connection structure of the dielectric waveguide line of the present invention having the configuration shown in FIG. 2, the transmission characteristics of the transmission line including the T-shaped branch are the S-parameter level and phase frequency. The characteristics were calculated by the finite element method.
As the conditions for calculation, pure copper having a conductivity of 5.8 × 10 ⁷ (1 / Ωm) was used as the material for the main conductor layers 2 and 3 and the through conductor, and 75% by weight of borosilicate glass was used for the dielectric substrate 1. Using a glass-ceramic sintered body having a relative dielectric constant of 5 and a dielectric loss tangent of 0.001 produced by firing alumina and 25% by weight of alumina, the thickness a of the dielectric substrate 1 is 0.62 mm, and the diameter of the through conductor is 0.1.
mm, the repetition interval c of the sidewall through conductor group 4 is 0.25 m
m, the predetermined width b of the side wall through conductor group 4 is 1.2 mm,
The length of the transmission line was 2.25 mm.

The sub conductor layer 5 is formed from the main conductor layer 3 to 0.154.
mm, 0.308 mm, 0.462 mm are provided at three positions to form a four-layer structure, and the size and shape of the coupling window 7 are 1.2 mm.
It was a square of 1.2 mm.

The end face through conductor group 8 of the dielectric waveguide line 6A is formed so as to extend one side wall through conductor group 4 of the other dielectric waveguide line 6B. The diameter and the repeating interval were the same as those of the sidewall through conductor group 4. The position of the end face sub-conductor layer 9 was the same as that of the sub-conductor layer 5.

FIG. 6 (a) shows these results in the frequency characteristic of the S parameter level, and FIG. 6 (b) shows in diagram the frequency characteristic of the S parameter phase.
In FIG. 6A, the horizontal axis represents frequency (GHz) and the vertical axis represents S.
Of the parameters, the level value of S ₁₁ , S _21, and S ₃₁ (d
B), and the characteristic curve in the figure shows the frequency characteristic of each S parameter. Further, in FIG. 6B, the horizontal axis represents frequency (GHz) and the vertical axis represents S ₂₁ · S among S parameters.
₃₁ represents the phase value (degree), and the characteristic curve in the figure shows the frequency characteristic of each S parameter.

Here, in the connection structure of the dielectric waveguide line having the configuration shown in FIG. 2, S ₁₁ is the ratio of the electric power reflected from the electric power input from the port 10 and returned to the port 10. _S21 is for port 11 with respect to the power input from port 10.
S ₃₁ indicates the ratio of the power output from the port 12, and S ₃₁ indicates the ratio of the power output from the port 12 to the power input from the port 10.

From the results shown in FIG. 6A, S ₂₁ and S ₃₁
Are almost equal, and it can be seen that high-frequency signals pass through the connection well. The ratio of S ₂₁ and S ₃₁ is almost constant within the calculated frequency range and is 1: 1. Also, the phases after branching are the same. S ₁₁ is the design center frequency 77
It has a peak in the vicinity of GHz and is about -15 dB, indicating that the reflection is small.

On the other hand, from the results shown in FIG. 6B, S ₂₁
And the characteristic curves showing the phase of S ₃₁ almost overlap,
It can be seen that they are in phase.

Example 2 Next, regarding the connection structure of the dielectric waveguide line of the present invention having the configuration shown in FIG. 5, as the transmission characteristics of the transmission line including the T-shaped branch, the S parameter level and phase The frequency characteristics of were calculated by the finite element method. As the conditions for calculation, the same material as in [Example 1] was used, the thickness a of the dielectric substrate 1 was 0.62 mm, the diameter of the through conductors was 0.1 mm, and the repetition interval c between the sidewall through conductor groups 4 was c = 0.25. mm, the predetermined width b of the through conductor group 4 for the side wall b = 1.
2 mm, distance between the pair of main conductor layers 2 and 3 of the dielectric waveguide line 6B at the connection portion (thickness of the dielectric waveguide line 6B)
Was 0.15 mm, and the main conductor layers 2 formed in a stepwise manner were connected by penetrating conductors having the same diameter and repeating spacing as the side wall penetrating conductor group 4. The length of the transmission line was 2.25 mm.

Further, the end face penetrating conductor group 8 and the end face sub-conductor layer 9 were formed in the same manner as in [Example 1], and the size and shape of the coupling window 7 were a rectangle of 1.5 mm × 1.2 mm.

These results are shown in FIG. 7 (a) for the frequency characteristics of the S parameter level and in FIG. 6 (b) for the frequency characteristics of the S parameter phase, respectively, the same lines as in FIGS. 6 (a) and 6 (b). Shown in the figure.

From the results shown in FIG. 7A, S ₂₁ and S ₃₁
Are almost equal to each other, and it can be seen that the high-frequency signal satisfactorily transmits through the connection portion in a wider band than in the case of [Example 1]. The ratio of S ₂₁ and S ₃₁ is almost constant within the calculated frequency range and is 1: 1.
Has become. Also, the phases after branching are the same. Regarding S ₁₁ , the reflection is further reduced by providing the matching portion, and it is −19.5 dB at 77 GHz. As described above, since the thickness of the dielectric waveguide line in the connecting portion is reduced and the matching portion for transmitting the high frequency signal is provided, S ₁₁ becomes smaller than the result of [Example 1], In the range of 79 GHz, S ₂₁ and S ₃₁ have almost constant values.

On the other hand, from the results shown in FIG. 7B, S ₂₁
It can be seen that and S ₃₁ are in phase.

[Example 3] Similar to [Example 1], the width of the lower dielectric waveguide 6A in the connection portion and the coupling window 7 are formed.
When the frequency characteristics of the S parameter level and the phase were obtained for the connection structure of the dielectric waveguide line of the present invention having the configuration shown in FIG. It was confirmed that the reflection of the high frequency power, that is, the peak of S ₁₁ was reduced, and the reflection was further reduced by providing the matching portion.

Further, in the same manner as in [Example 1], the thickness of the lower dielectric waveguide 6A in the connection portion is reduced.
When the frequency characteristics of the S parameter level and the phase were obtained for the connection structure of the dielectric waveguide line of the present invention shown in FIG. 4, the pass band of the high frequency signal became wider than that of the result of [Example 1]. It was confirmed to have excellent connection characteristics.

From the above results, according to the connection structure of the dielectric waveguide lines of the present invention, the dielectric waveguide lines which are vertically stacked in the dielectric substrate are formed so as to be orthogonal to each other. It was confirmed that the transmission loss was small and the connection was easy with good transmission characteristics. It was also confirmed that two dielectric waveguide lines were crossed and one line could be connected and branched in a T shape with good transmission characteristics.

The present invention is not limited to the above-mentioned embodiments, and various modifications and improvements can be made without departing from the gist of the present invention.

[0094]

As described above in detail, according to the dielectric waveguide line connection structure of the present invention, the characteristic impedance mismatch between the dielectric waveguide lines before and after the connection portion can be prevented by any structure. Since it can be made small, the reflection of high-frequency signals at the connection part will be small, and since the propagation mode at the connection part will not be disturbed, a connection structure of a dielectric waveguide line with small transmission loss and good transmission characteristics I was able to get it.

That is, according to the connection structure of the dielectric waveguide line of the present invention, the dielectric waveguide lines on the lower layer side are vertically stacked in the dielectric substrate so that the transmission directions are orthogonal to each other. At the connection part of the upper dielectric waveguide line, one of the main conductor layers, that is, the upper main conductor layer of the lower dielectric waveguide line and the lower dielectric waveguide line of the upper dielectric layer Place the main conductor layer on top of each other, form a coupling window on the main conductor layer at the overlapped portion, and at a predetermined position from the center of the coupling window of the dielectric waveguide line to which a high-frequency signal is input. Since the through conductor group for the end face and the sub conductor layer for the end face are formed in
The two dielectric waveguide lines are coupled by an electromagnetic field, and the high frequency signal input from one of the dielectric waveguide lines can be propagated to the other dielectric waveguide line through the coupling window. Since there are two directions that can be propagated in the other dielectric waveguide line, the high frequency signal can propagate in the two directions to branch the high frequency signal in a T shape. Also,
If they are formed on both dielectric waveguide lines, L
High frequency signals can be propagated in a letter shape.

[0096]

Further, according to the connection structure of the dielectric waveguide lines of the present invention, in the above structure, at least one of the dielectric waveguide lines in the portion where the dielectric waveguide lines are overlapped has the width, that is, the transmission. By widening the width of the sidewall through conductor group in the direction orthogonal to the direction, or by making the thickness thin, that is, by narrowing the interval between the pair of main conductor layers,
It is possible to reduce the discontinuity of the impedance of the dielectric waveguide line at the connection portion and realize a connection with less high frequency signal reflection and transmission loss.

As described above, according to the present invention, in the dielectric waveguide line which can be easily manufactured by the conventional multi-layering technique, the dielectric waveguide lines are formed by vertically stacking on the dielectric substrate so as to be orthogonal to each other. In addition, it is possible to provide a connection structure of dielectric waveguide lines which can easily connect the dielectric waveguide lines to each other and branch a high-frequency signal in a T-shape.

Further, according to the present invention, it can be formed in a dielectric substrate, there is no radiation / leakage of electromagnetic waves of a high frequency signal, and two dielectric waveguide lines are crossed and coupled to each other.
It has been possible to provide a connection structure of a dielectric waveguide line which can connect and branch a line of T-shape or L-shape with small transmission loss and good transmission characteristics.

[Brief description of drawings]

FIG. 1 is a schematic perspective view for explaining an example of a dielectric waveguide line used in the present invention.

FIG. 2A is an exploded perspective view showing a state before connecting the dielectric waveguide lines in the example of the embodiment of the connection structure of the dielectric waveguide lines of the present invention, and FIG. FIG. 3C is a perspective view showing a state in which the body waveguide lines are connected, and FIG. 7C is a perspective view showing a state in which the dielectric waveguide lines are indicated by outlines for easy understanding.

FIG. 3A is an exploded perspective view showing a state before the dielectric waveguide line is connected in another example of the embodiment of the connection structure of the dielectric waveguide line of the present invention, FIG. Is a perspective view showing a state in which the dielectric waveguide lines are connected, and FIG. 8C is a perspective view showing a state in which the dielectric waveguide lines are indicated by outlines for easy understanding.

FIG. 4A is an exploded perspective view showing a state before connecting the dielectric waveguide lines in still another example of the embodiment of the connection structure of the dielectric waveguide lines of the present invention, FIG. 8A is a perspective view showing a state in which the dielectric waveguide lines are connected, and FIG. 13C is a perspective view showing a state in which the dielectric waveguide lines are indicated by outlines for easy understanding.

FIG. 5A is an exploded perspective view showing a state before connecting the dielectric waveguide lines in still another example of the embodiment of the connection structure of the dielectric waveguide lines of the present invention, FIG. 8A is a perspective view showing a state in which the dielectric waveguide lines are connected, and FIG. 13C is a perspective view showing a state in which the dielectric waveguide lines are indicated by outlines for easy understanding.

FIG. 6A is a diagram showing frequency characteristics of S parameter levels in a connection structure of dielectric waveguide lines of the present invention, and FIG. 6B is a diagram showing frequency characteristics of S parameter phases. .

FIG. 7A is a diagram showing frequency characteristics of S parameter levels in a connection structure of dielectric waveguide lines of the present invention, and FIG. 7B is a diagram showing frequency characteristics of S parameter phases. .

[Explanation of symbols]

1. Dielectric substrate 2, 3 ... Main conductor layer 4 ... Side wall through conductor group 5 ... Sub conductor layer 6 ... Dielectric waveguide line 6A ... 1st (lower layer side) dielectric waveguide line 6B ... Second (upper layer side) dielectric waveguide line 7 ... window for coupling 8: Through conductor group for end face 9 ... Sub-conductor layer for end face

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01P 5/02 601 H01P 3/12 H01P 5/08 H01P 5/12 H05K 9/00

Claims (3)

(57) [Claims] 1. A pair of main conductor layers sandwiching a dielectric substrate, with a repeating interval of less than ½ of a signal wavelength in a transmission direction of a high frequency signal, and a predetermined width in a direction orthogonal to the transmission direction. Two rows of side wall through conductor groups formed by electrically connecting the main conductor layers, and between the main conductor layers in parallel with the main conductor layer, and electrically connected to the side wall through conductor groups. Two dielectric waveguide lines for transmitting a high frequency signal by the region surrounded by the main conductor layer, the side wall penetrating conductor group and the sub conductor layer. One of the main conductor layers is arranged so as to be orthogonal to each other in the transmission direction, a coupling window is formed in the main conductor layer at the overlapped portion , and the high frequency signal is input.
From the center of the coupling window of the dielectric waveguide line
In the transmission direction, the high frequency signal is transmitted to a position below the guide wavelength.
Interval less than half the signal wavelength in the direction orthogonal to the transmission direction
For end faces formed by electrically connecting the main conductor layers with each other
Formed in parallel with the main conductor layer between the through conductor group and the main conductor layer
Is electrically connected to the sub conductor layer and the end face through conductor group.
A dielectric waveguide line connection structure, characterized in that an end face sub-conductor layer that is electrically connected is formed . 2. The width of the through conductor group for side walls of the two rows of the dielectric waveguide lines in the portion where the dielectric waveguide lines are overlapped is made wider than the predetermined width. connecting structure to claim 1 Symbol placement of the dielectric waveguide line. 3. A process according to claim 1, characterized in that narrower than the interval in the interval other portion of the pair of main conductor layers of the dielectric waveguide line at the site of repeated the dielectric waveguide line connection structure of the serial mounting of the dielectric waveguide line.