JP2000077683A - Photo semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make thin the profile of a light-emitting device and a photodetector, and to minimize a module and a set where the light-emitting device and the photo detector are incorporated. SOLUTION: A photo semiconductor device is provided with semiconductor chips 23 and 24 as a light-emitting device and a photo detector, and a resin- sealing body 25 for sealing them is made of a material that becomes transparent to light. On a region where light is emitted from the device and on a region where light enters the device, a groove 27 is formed, and a reflection surface 26 is composed in the groove 27, thus allowing light to be emitted and enter via a side surface E. Also, although a lens is formed on the side surface E for stopping down the lens, the outermost end part OS of a projection part is allowed to coincide with the junction surface of a mold, thus improving mold releasing after sealing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device and an optical semiconductor module mounting the same.
In particular, the structure of the optical semiconductor device is made thinner, and light is emitted (or made incident) from the thinner side surface, thereby realizing miniaturization and thinning of a device using the same.

[0002]

2. Description of the Related Art Recently, multimedia equipment such as a sub-notebook personal computer, a portable information terminal, and an electronic still camera has been remarkably developed.

[0003] Moreover, 7 million portable devices are sold annually, and about 80% adopt the infrared system of the IrDA (InfraredData Association) standard. That is, transmission / reception between the external device and the main body via an infrared signal is required, and a light emitting element that emits infrared light and a light receiving element that receives infrared light are required.

An optical head used in an optical recording / reproducing apparatus such as an MD or a CD irradiates a beam onto an optical recording medium to detect a modulated beam from the optical recording medium, thereby recording and reproducing information. I do. Also here, a light emitting element and a light receiving element are required.

However, these light emitting elements and light receiving elements have not been reduced in size. For example, FIG.
The semiconductor laser 1 is directly disposed on a semiconductor substrate 2, and a prism 3 having a trapezoidal cross section is fixed to the semiconductor substrate 2. FIG. 4 is an optical recording medium. The inclined surface 5 of the prism 3 facing the semiconductor laser 1 is a semi-transmissive reflecting surface, and the prism surface 6 in contact with the semiconductor substrate 2 has a portion other than the photodetector (light receiving element) 7. The prism surfaces 8 facing each other are reflection surfaces.

A beam 9 emitted from the semiconductor laser 1 and incident on the prism 3 from the inclined surface 5 is reflected by the reflecting surfaces 6 and 8 and detected by the photodetector 7.

FIG. 16 shows an infrared data communication module 11, which includes an infrared LED, an LED driver, a PIN photodiode, an amplifier, and the like. For example, the LED 12 is mounted on a substrate, and light emitted from the LED 12 is emitted to the outside via the lens 13. The photodiode 14 mounted on the substrate has a lens 15
And enters the mold 11.

[0008]

In the above-mentioned module, the optical equipment is mounted above the semiconductor substrate in FIG. 15, so that a very advanced technique is required and the price is high. .

In FIG. 16, light needs to be put in and out of the mold body, and it is necessary to set another optical semiconductor device at the opposing position. There was a problem that could not be realized.

If the light is to be taken in and out in the horizontal direction in FIG. 16, the lead 16 of the optical semiconductor device 11 must be bent at 90 degrees as shown in FIG.
Depending on how the optical semiconductor device 11 is bent,
There was a problem with stability.

[0011]

SUMMARY OF THE INVENTION The present invention has been made in view of the aforementioned problems, and has a semiconductor chip having an upper surface as a light receiving surface, a resin sealing the semiconductor chip, and a resin transparent to at least a predetermined light. A sealing member, a reflection surface provided at a position intersecting a perpendicular to the light receiving surface, a reflection surface provided on the resin sealing member, and a convex lens integrally formed on a side surface of the resin sealing member. The problem is solved by making the end portions of the upper and lower molds that seal the resin sealing body substantially coincide with the outermost portions along the direction in which the lens protrudes.

By providing a reflecting surface, light can be made incident on the side surface. In addition, the releasability of the optical semiconductor device can be improved by locating the extreme end of the lens at the joint of the mold. it can.

Second, the semiconductor chip having an upper surface as a light emitting surface, the semiconductor chip sealed, a resin sealing body transparent to at least a predetermined light, and a line intersecting a perpendicular to the light receiving surface, A reflecting surface provided on the resin sealing body, and a convex lens formed by integral molding on a side surface of the resin sealing body, and an extreme end portion along a direction in which the lens protrudes; This problem can be solved by making them substantially coincide with the joining portions of the upper and lower molds for sealing the resin sealing body.

Third, the problem is solved by providing the resin sealing body with a lead, and extending the upper surface of the lead and the outermost end on the same plane.

Both can emit light from the side by providing the reflection surface, as in the first case, and can improve the releasability of the optical semiconductor device molded in the mold. .

Fourth, the problem is solved by making a virtual line segment formed by the lowermost end of the lens and the focal point of the lens intersect with the reflection surface.

By forming the groove deeply so that the imaginary line intersects the reflection surface, efficient reflection can be realized.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.

For the sake of comprehension, the figures are made by integrating the three figures, wherein the upper left is a plan view of the optical semiconductor device, the lower left is a cross-sectional view taken along line AA of the plan view, and the upper right is the plan view. B-
It is sectional drawing in the B line.

First, there is a lead frame. This lead frame includes an island 21 and a lead 22 indicated by a two-dot chain line.
Here, a semiconductor chip 23 indicated by an alternate long and short dash line serving as a light emitting portion and a semiconductor chip 24 indicated by an alternate long and short dash line serving as a light receiving portion are fixed via Cu or other fixing means.

The semiconductor chip 23 is, for example, an infrared LE.
D, a light emitting element such as a laser, and a driving circuit may be integrated. Infrared LEDs are arranged horizontally on the island as shown in FIG. 1 because they come out from the top surface of the chip. However, in the case of a semiconductor laser, light is emitted from the side surface of the chip, so a groove as shown is necessary. And not. However, in terms of manufacturing, it is more convenient to form the groove as shown in FIG. 12 than to form the groove as shown in FIG. 3, and the groove may be formed thereon.

The semiconductor chip 24 is a photo sensor, such as a PIN diode, and the driving circuit of the PIN diode may be an integrated circuit.
Alternatively, a laser driving circuit may be integrally formed. Bonding pads are formed around these semiconductor chips. Correspondingly, a plurality of leads 22 extend from the periphery of the chips to the outside, and these are connected by thin metal wires. Here, the sealing material only needs to be transparent to light, and the material is not particularly limited. In the case of LEDs, light is generally infrared light, and any resin that transmits this infrared light may be used. In other words, it suffices to transmit at least the predetermined light, and the tip of the lead and the semiconductor chip are sealed with the sealing body 25 transparent to the light. The sealing body 25 has a groove 27 having a reflection surface 26.

A feature of the present invention resides in the reflection surface 26,
The reflecting surface is formed by forming a groove in the sealing body 25, whereby light can be emitted from the side surface E of the sealing body 25 and incident on the side surface E as indicated by a dotted arrow.

In general, a semiconductor chip constituting a light emitting section and a light receiving section constitutes a semiconductor device by constituting a prism and a lens on the semiconductor chip. Since the thickness is increased, and optical devices are arranged on and around this, it is difficult to reduce the thickness and size. However, the reflecting surface 2 which is a part of the groove of the sealing body
6 allows light to enter and exit from the side E of the sealing body, so that no prism is required, and if a lens is needed, it can be formed on this side E. That is, as shown in FIG. 3, a convex lens can be integrally molded on the side surface of the transparent sealing body, or a lens may be separately attached here. Therefore, the thickness of the device itself can be reduced.

The lead frame is made of Cu, the thickness is about 0.125 mm, and the thickness of the semiconductor chip is, for example, about 250 to 300 μm. The sealing body 25 is
It is made of a transparent epoxy material, for example, by transfer molding, and has a total thickness of about 1 mm to 1.5 mm. It goes without saying that if the thickness of the chip is reduced, it can be further reduced. The mold is also provided with a portion for forming a groove, and when the semiconductor chip is transfer-molded with a transparent resin sealing body, the groove is formed at the same time.

The groove 27 may have a reflection surface without exposing the semiconductor chip. For example, the groove 27 has a depth of about half the thickness, here about 750 μm, and constitutes at least the reflection surface 26. The part is at 45 °.
The reflecting surface here becomes a reflecting surface due to the difference in the refractive index between the air on both sides of the interface and the transparent resin. However, since not all light is reflected, a metal film may be formed on the reflection surface.

As the coating method, vapor deposition and sputter deposition used in semiconductor technology can be considered, and in addition, plating can be considered. A point to be noted here is a short circuit with the coating material formed on the sealing body 25. The former two coating methods require a mask. When the whole is dipped in a solution by, for example, electroless plating, a resin is applied to a lead 22 of a lead-out part and a sealing body 25 around the lead-out part, and thereafter, plating is performed to remove the resin. I just need. In addition to the dip, this solution may be dropped only on the groove to perform plating. As the metal material, gold, Al, nickel and the like can be considered.

Since the mold is formed by electrical discharge machining, and is matte-finished in consideration of the releasability of a molded product, the portion corresponding to the reflection surface is mirror-polished, and the above-described reflection is performed. The film may be substituted for the surface, or the surface may be subjected to a film treatment. Further, since the light is incident or emitted from the side surface E, it is preferable that this portion is also subjected to mirror finishing.

In this embodiment, the leads can be arranged on the side surfaces F, G and H excluding the side surface E where the light enters and exits (emission and incidence). However, the side surface H is preferable in consideration of reflection by a thin metal wire or a lead. In the plan view, a semiconductor chip serving as a light receiving section has a light receiving element region (first region) substantially on the right side and a drive element region (second region) for driving the light receiving element region on the left side. That is, since the second semiconductor region does not serve as a light path, this region can be used as a region from which leads are led out and a thin metal wire region, and noise due to light reflection or the like enters the first region. Has been prevented. Since the first region is shifted to the right, the groove 27 is also shifted to the right, and the region on the left from the groove can be secured as a region for extending the wire. If the first on the left or center
If there is an area, the wire may be exposed from the groove.

When the optical semiconductor device described above is mounted on a resin film such as a printed circuit board, a ceramic substrate, an insulated metal substrate, or a TAB, for example, as shown in the lower left sectional view of FIG. Modules and devices can be formed.

For example, when mounted on an IC card or the like, the thickness of the card itself can be reduced and optical signals can be exchanged in the lateral direction.

On the other hand, the island 21 is composed of two islands as shown by a two-dot chain line, but may be constituted integrally. Further, the resin sealing body 25 is formed by integrally molding two semiconductor chips, but may be individually formed. Naturally, two semiconductor chips may be fixed to one island and each of them may be individually molded, or may be separately molded like a discrete component separately from the lead frame.

The smallest rectangle surrounded by a dotted line indicates a portion where light is emitted or light is emitted.

FIG. 2 shows one reflecting surface 30 of the groove 27.
Is made vertical. In this case, as compared with FIG. 1, a left area can be secured from the groove, it is possible to extend the wire in this part, and the second area can be enlarged and arranged to the vicinity. However, if the surface is vertical, the releasability from the mold deteriorates. Therefore, it is better to incline slightly to the left.

FIG. 3 is a plan view of the optical semiconductor device actually formed. The left side of the center is a plan view seen from above, the right side of the figure is a plan view of the plan view seen from the left side, and the upper part is an AA of the plan view. It is a photo IC part in the sectional view of the line. The lower part is a plan view taken along the line BB, and shows a light emitting diode portion. Also, FIG.
It is the drawing which mounted the photodiode and LED on the lead frame.

Referring first to FIG. 4, here, the lead 22 extends only on the left side of the island 21, and a bonding extension 30 is formed at the tip thereof.
Bonding pads are formed on the left side and the lower side of the IC chip, and the extended portion 30 and the bonding pads are electrically connected by wire bonding. Reference numeral 31 denotes an LED island, which has a cup shape as shown in the lower part of FIG. This cup is formed with a slanted side surface, and condenses the light that has flown to a position other than the upper portion at the inclined portion to efficiently fly upward. For example, it is like a light collector formed around a bean ball of a portable lamp. A PIN photodiode is formed in the light receiving unit 24, and a driving IC circuit is built around the PIN photodiode. An LED driving circuit is built in the vicinity of the connection between the two wires extending from the LED. A rectangle indicated by a dotted line is a portion indicating a resin sealing region.

Referring to FIG. As can be seen from the left side of the center, two grooves having the reflection surface 26 are formed, and a wall 32 is formed between the grooves so as to block the gap. This groove may be formed continuously from one side to the other side as shown in FIG. 12, but with this structure, when an external force is applied, cracks are formed around the bottom of the groove. May occur. Therefore, a frame is formed so as to surround the photo IC and the LED, thereby improving the strength against the destruction. Except for the reflection surface of the groove, a certain angle is provided to improve the mold release after molding (pulling characteristics of the optical semiconductor device). Naturally, the outer shape is also angled so as not to be parallel to the drawing direction in order to improve the release characteristics.

A lens L having a spherical surface is provided on the side surface E. However, the lens L may be an elliptical lens. This optical semiconductor device is formed in an IrDA-like manner, and the lens L where the upper light receiving element is formed efficiently receives an external optical signal so that light shines on the light detection area of the light receiving element. Designed for The lower LED is designed so that emitted light reaches a detection area of another optical semiconductor device.

The details of the present lens will be described later with reference to FIGS.

FIG. 5 illustrates another method of forming the reflection surface, and the reflection is performed on a substantially rectangular parallelepiped resin sealing body (a tapered surface may be formed in consideration of releasability as described above). A means having a surface 26 (hereinafter, referred to as a prism body 40) is fixed thereto. The prism body 40 and the resin sealing body need to be made of a material having at least an optical path indicated by a dotted line having transparency to predetermined light. Considering refraction, it is preferable that both are integrated as shown in FIG. However, they may be fixed as individual parts. In this case, those having substantially the same refractive index including the adhesive to be fixed are preferable.

FIG. 6 describes the substrate 41. As described above, it can be mounted on a resin film such as a printed board, a ceramic substrate, an insulating metal substrate, or TAB.

These are employed as so-called hybrid substrates, and include active elements such as semiconductor bare chips,
The passive element is fixed by solder or the like, and a predetermined function including the optical semiconductor device is realized. Further, the printed circuit board may be constituted by a molded chip.

For example, a metal substrate or the like generally has a frame member formed around the substrate and filled with an epoxy resin or the like, but the area on the right side of the dotted line is at least a predetermined light. Materials that are permeable to them are preferred. In this case, the portion corresponding to the optical path of light needs to be made of a material that transmits light. Further, in the case of forming by a full mold, it is necessary that all are formed of a material that transmits light.

In many cases, the ceramic substrate is sealed with a full mold as in FIG. 2, and in this case, it is preferable that all of the material is transparent to predetermined light. Further, since a printed board or the like uses a general molded chip, only the right side from the dotted line may be sealed. However, in general, it is more reasonable to simply mount the optical semiconductor device of FIG. 1 as shown in FIG.

FIGS. 7 and 8 show a case where the present invention is applied to a can type made of a ceramic package and a metal. FIG. 43 shows a ceramic package and 44 shows a can made of a metal. It is a permeable material and the inside has a hollow structure. Therefore, in this case, prisms 45 and 46 that transmit light having a reflection surface are provided in a portion serving as a lid, and the light is bent 90 degrees as indicated by a dotted line, and is emitted or incident in the horizontal direction. Since the drawings are used for describing the sealing body, specific leads, electrodes, fine metal wires, and the like are omitted.

In FIG. 4, the lead frame has been described. However, other than this lead frame, all lead frames used in the semiconductor field can be used. However, considering the stability of the island due to the resin pressure at the time of molding, it is preferable that the suspension leads are on the opposite sides.
The so-called four-way suspension leads extending from the four corners of the island are also important structures for improving the stability of the island and keeping the light directivity of the product constant.

Also, various sealing structures can be applied. For example, Electronics (October 1997, p. 74-)
As described in the above, the type in which the lead of the package is inserted into the through hole of the substrate, that is, the lead insertion type is inline type SIP, HSIP, ZIP, dual line type DIP, HDIP, SDIP, WDI.
P, PGA (pin grid array), and surface mount types that are directly soldered to the surface of the substrate using solder cream, etc. are SVP, SOP, SSOP, TSOP, HSO
P, QFP, TQFP, HQFP, QFN, SOJ, Q
FJ, BGA, LGA, DTP, QTP and the like can be considered.

Of course, face-up and face-down can be adopted, and CSP, B
GA is also possible.

FIGS. 9, 10, and 11 illustrate the IC card. This is a case in which a printed circuit board 48 to which circuit elements are soldered is placed in a metal case 47, and the entrance of light from the case 47 is open or a transparent material such as glass or plastic. Is provided. Although the optical semiconductor device 50 is shown here molded together with the substrate,
A component as shown in FIG. 1 may be mounted. FIG.
FIG. 1 is a schematic plan view of an IC card, in which light is emitted from the right side and emitted to the outside, and light from outside is taken in, and an optical signal is converted into an electric signal by an optical IC. The converted signal is stored in a memory such as a flash memory and an FRAM.

FIG. 11 illustrates a method of using an IC card.
9 realizes IrDA. As a power source of the IC card, a power source in which a battery is built in the IC card, a power source in which electromagnetic induction is performed using a coil, and the like can be considered. In addition, light has a large amount of data and a high speed, so that high-speed optical communication is possible. Furthermore, unlike the exchange of electrical signals,
Since electrical connection for signals is not required, there is no reduction in reliability due to poor electrical connection.

FIG. 12 shows a structure in which the present optical semiconductor devices 52 and 53 are mounted on circuit boards 50 and 51, and a structure in which signals are exchanged between the boards. The optical signal is also transmitted upward using the reflection surface of FIG. 1 as a half mirror. The optical semiconductor device 55 is also mounted on the board 54, and realizes optical communication with the optical semiconductor device 56 on the back surface of the board in the vertical direction. Therefore, electrical wirings necessary for exchanging signals between circuit boards arranged horizontally and vertically are not required.

FIG. 13 is a reproduction of the reading of the optical medium of FIG. The light emitted from the laser 60 jumps once to the recording medium 62 via the reflection surface of the half mirror of the optical semiconductor device 61, and this light is reflected to the optical IC of the optical semiconductor device via the reflection surface of the half mirror. Then, the status of the recording medium 1 or 0 is determined.

FIG. 14 shows an optical semiconductor device 63 in which a laser 64 is also integrally sealed in a sealing body, and a light emitting surface, a light receiving surface and a medium are arranged on a straight line. Further, in a triangle structure in which a laser and a light receiving element are attached as shown in the upper left of FIG.

Finally, the mold will be described. First, since it is better to attach the lens L to narrow the light beam, the lens L2 was attached to the side surface of the sealing body as shown in FIG. However, there were the following problems. That is, the lens L2 passing through the center P
Of the upper mold 7 (the maximum projecting point of the lens L2)
Due to the presence on the first side, there was a problem that the sealed body could not be released after sealing.

This problem did not occur in the conventional structure shown in FIG. That is, since the portion corresponding to the end portion OS of the lens faces upward, there is no need to consider the releasability at all.

The present optical semiconductor device has an optical path positioning accuracy,
In addition, the lens L must be formed so as to straddle the upper mold 71 and the lower mold 70 due to constraints such as contact of the mounting substrate with the lower mold 70.

Therefore, as shown in FIG. 18, the end surface OS of the lens L1 and the bonding surface 72 of the upper and lower molds 70 and 71 need to be aligned. The reflecting surface 26 must be formed deeply so that a line segment R2 connecting the lower end V of the lens L1 and the focal point P intersects. In the figure, the focal point is formed so as to coincide with the surface of the semiconductor chip. However, it is necessary to move the focal point slightly from the focal point P on a spot having a certain area. Must be formed to intersect the plane. Here, R1 and R2 are the radius of the spherical surface L1.

Generally, the leads 22 are embedded in the lower mold 70 when molding. Also, in consideration of resin burrs, the surface of the lead 22 and the bonding surface need to be aligned. Accordingly, the position of the end portion OS and the surface of the lead 22 are:
It is necessary to virtually configure the same plane.

As a result, the sealed optical semiconductor device becomes
Release from the mold becomes easy.

[0060]

According to the present invention, first, by providing a reflecting surface, light can be made incident on the side surface, and furthermore, by positioning the extreme end of the lens at the joint of the mold, the present invention can be applied. The mold releasability of the optical semiconductor device can be improved.

Second, by providing a reflecting surface, light can be emitted from the side surface, and the releasability of the optical semiconductor device molded in a mold can be improved.

Third, by making a virtual line segment formed by the lowermost end of the lens and the focal point of the lens intersect with the reflection surface, efficient reflection can be realized.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a groove in FIG. 1;

FIG. 3 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

FIG. 4 is a diagram illustrating a lead frame used in FIG. 3;

FIG. 5 is a view for explaining means for forming a reflection surface.

FIG. 6 is a diagram when applied to a hybrid substrate.

FIG. 7 is a drawing when applied to a ceramic package.

FIG. 8 is a drawing when applied to a can type package.

FIG. 9 is a diagram when applied to an IC card.

FIG. 10 is a schematic plan view of FIG. 9;

FIG. 11 is a diagram illustrating a relationship between an IC card and a computer.

FIG. 12 is a diagram in which the present optical semiconductor device is mounted on a circuit board arranged three-dimensionally.

FIG. 13 is a diagram in which the optical semiconductor device of the present invention is applied to an optical pickup.

FIG. 14 is a diagram in which the optical semiconductor device of the present invention is applied to an optical pickup.

FIG. 15 is a schematic view showing a combination of a conventional optical semiconductor device and an optical device.

FIG. 16 is a schematic view of a conventional optical semiconductor device.

FIG. 17 is a diagram in which a conventional optical semiconductor device is mounted on a circuit board.

FIG. 18 is a diagram illustrating a method for sealing the optical semiconductor device.

FIG. 19 is a view for explaining a problem in the method for sealing the optical semiconductor device.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroshi Inoguchi 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Tsutomu Ishikawa 2-5-5 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Inventor Masatoshi Arai 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Pref. Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Kobori, Keihanhondori, Moriguchi-shi, Osaka 2-5-5 Sanyo Electric Co., Ltd. (72) Inventor Hiroki Seyama 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term in Sanyo Electric Co., Ltd. 5F088 AA03 BA15 BA18 BA20 BB01 EA07 EA09 JA02 JA06 JA10 JA11 JA12 LA01

Claims (5)

[Claims] 1. A semiconductor chip having an upper surface as a light receiving surface, a resin sealing member for sealing the semiconductor chip and transparent to at least a predetermined light, and provided at a position intersecting a perpendicular to the light receiving surface. A reflecting surface provided on the resin sealing body, and a convex lens formed by integral molding on a side surface of the resin sealing body, and an end portion along a direction in which the lens projects. And an upper and lower mold part for sealing the resin sealing body substantially coincides with each other. 2. A semiconductor chip having an upper surface as a light emitting surface, sealing the semiconductor chip, a resin sealing body transparent to at least a predetermined light, and intersecting a perpendicular line of the light receiving surface, and forming the resin sealing member. A reflecting surface provided on a stationary body, and a convex lens formed by integral molding on a side surface of the resin sealing body; an end portion along a direction in which the lens protrudes; An optical semiconductor device characterized in that the joining portions of the upper and lower molds for sealing the stopper substantially coincide with each other. 3. The optical semiconductor device according to claim 1, wherein the resin sealing body has a lead, and an upper surface of the substantial lead and the outermost end form the same plane. 4. The optical semiconductor device according to claim 1, wherein an imaginary line segment formed by a lowermost end of said lens and a focal point of said lens intersects with said reflection surface. 5. A mounting substrate on which at least a semiconductor chip having a light receiving surface (or a light emitting surface) is fixed is disposed in a lower die, and an upper die and a lower die are bonded to the lower die. In a method for manufacturing an optical semiconductor device for sealing a semiconductor chip by injecting a resin transparent to at least predetermined light into a space formed by an upper mold and the lower mold, Is provided at a position that intersects a perpendicular line of the light receiving surface (or light emitting surface), a portion serving as a reflection surface provided on the resin sealing body is provided, and is formed by integral molding on a side surface of the resin sealing body. The optical semiconductor device is sealed in a state where the end portion along the direction in which the lens protrudes and the joining portion of the upper mold or the lower mold are substantially matched, and thereafter, the optical semiconductor device is released from the mold. Of manufacturing an optical semiconductor device.