JP2000075256A - Production of liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the method for producing a liq. crystal display device by which the generation of a static electricity and damage of a substrate can be prevented or suppressed in a heat treatment step where an insulated substrate is made in contact with a high temp. stage. SOLUTION: An insulated substrate 1 is held above a high temp. stage 2 by a supporter 3 before making the substrate 1 in contact with the high temp. stage 2, and in a state of generating a space between the high temp. stage 2 and the insulated substrate 1, the insulated substrate 1 is held for a specified time in a heated atmosphere being formed by the high temp. stage 2 and moisture is removed or reduced. After then, the insulated substrate 1 is taken heat- treatment by contacting with the high temp. stage 2. As preventing or inhibiting a contact/peel continuous vibration is enabled by carrying out heat treatment of the insulated substrate 1 in a stage removed or reduced the water content, generation of the static electricity and damage of the insulated substrate 1 can be prevented or suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device capable of preventing or suppressing generation of static electricity and damage to an insulating substrate in a heat treatment step of bringing the insulating substrate into contact with a high-temperature stage. is there.

[0002]

2. Description of the Related Art In general, a liquid crystal display device is manufactured by a pattern substrate manufacturing process for manufacturing a glass substrate with a transparent electrode, an alignment film, a cell manufacturing process including cell assembly and liquid crystal injection, and TAB mounting and backing. It consists of a module manufacturing process including light mounting and the like. The liquid crystal display device includes a liquid crystal material, two electrodes sandwiching the liquid crystal material, wiring for applying a voltage to each of the electrodes, a color filter including three primary colors of RGB, and the like. I have.

In the process of manufacturing a liquid crystal display device, usually, an insulating substrate of a component constituting the liquid crystal display device is brought into contact with a high-temperature stage and heat-treated, for example, to form an alignment film on the insulating substrate or to form a transparent electrode. There is a step of drying the insulating substrate on which is formed. In this step, the insulating substrate and the high-temperature stage generate contact, friction, peeling, or the like, and are charged with static electricity. This static electricity attracts surrounding dust to the insulating substrate and causes the dust to adhere to the insulating substrate, causing a failure of the liquid crystal display device. In addition, when the amount of static electricity charged on the insulating substrate increases, discharge occurs between the insulating substrate and other components, and the electronic devices formed on the surface of the insulating substrate are damaged, which causes a defect in the liquid crystal display device. Occurs. Therefore,
Preventing the generation of static electricity and quickly removing the generated static electricity are extremely useful for improving the production yield of the liquid crystal display device.

Japanese Utility Model Laid-Open No. 5-45641 discloses a substrate processing apparatus having an electrostatic removing device as a manufacturing device for quickly removing static electricity generated in a heat treatment process for manufacturing a liquid crystal display device. FIG. 16 is a perspective view showing the substrate processing apparatus. In the figure, 101 is a stage for heating an insulating substrate 107 to be processed, 102 is a guide hole arranged at a portion corresponding to four corners of the insulating substrate 107, and 103 is a lattice for holding the insulating substrate 107 by vacuum suction. A through-hole 104 is disposed immediately below the stage 101, and a table is provided with a plurality of sets of pins 105 of different lengths that can pass through the guide holes and is disposed on the table 101. A driving device 108 is capable of supporting the insulating substrate 107 from both ends thereof and carrying it into and out of the stage 101 on the stage 101. A known ion generating device 109 is attached to the longer side of the pin 105. It is a type of static eliminator. In the present apparatus, when the insulating substrate 107 is fixed to the stage 101 by suction or released, the electrostatic removal device 109 is used.
Is operated to add positive and negative ions from the sides of the insulating substrate 107 to the insulating substrate 107 and the stage 10.
1 to remove static electricity generated between the insulating substrate 107 and the stage 101.

[0005]

In a conventional method of manufacturing a liquid crystal display device having a heat treatment step, static electricity generated between a stage for performing heat treatment and an insulating substrate is removed by using a static electricity removing device. Therefore, there is a problem that it is necessary to introduce a static eliminator into a narrow space of the apparatus in the heat treatment step of treating the substrate at a high temperature, and it is difficult to introduce the static eliminator in some cases. Further, by bringing the insulating substrate into contact with the high-temperature stage, the insulating substrate may be vibrated and the insulating substrate may be damaged, but an effective solution for preventing the damage has not been provided yet. There were also points.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. A first object of the present invention is to generate static electricity on an insulating substrate in a heat treatment step in a method of manufacturing a liquid crystal display device having a heat treatment step. Is to provide a method for preventing or suppressing this. A second object is to provide a method for preventing or suppressing breakage of an insulating substrate in a heat treatment step in a method for manufacturing a liquid crystal display device having a heat treatment step. Still another object of the present invention is to provide a method for eliminating static electricity even if the static electricity is generated by minimizing the amount of the generated static electricity.

[0007]

In order to prevent the generation of static electricity on the insulating substrate in the heat treatment step, it is necessary to pay attention to the phenomenon that occurs when the insulating substrate comes into contact with the high-temperature stage.

The potential of the insulating substrate generated by the contact is
Since it is considered to correspond to the generated static electricity, after the insulating substrate was brought into contact with the high-temperature stage, the potential was measured, and the mechanism of the static electricity generation was examined.

A glass substrate was used as an example of an insulating substrate, and the potential was measured by bringing the substrate into contact with a stage heated to various temperatures. The experimental procedure is shown in FIG. 12 (FIG.
It is a side view which shows a mode that the glass substrate supported by the pin on the high temperature stage of 0 degreeC is contacted with a high temperature stage. ). (A) After heating the stage 101 to a predetermined temperature, the glass substrate 110 is placed on the pins 105. Pin 105
Can be moved up and down from inside the stage 101 through a guide hole (not shown) provided in the stage. (B) The pins 105 are lowered into the inside of the stage 101, and the glass substrate 110 is brought into contact with the stage 101. (C) The stage 101 is provided with a through-hole (not shown) for vacuum suction, and starts vacuum suction by reducing the pressure through the through-hole. (D) Stage 101 and glass substrate 110 within 10 seconds
Completely adsorbs. (E) Ten seconds after the pin 105 is lowered into the inside of the stage 101 and the contact between the glass substrate 110 and the stage 101 is started, the vacuum suction is stopped, and the pin 105 is raised from the inside of the stage 101, The contact between the substrate 110 and the stage 101 is released. (F) The potential of the glass substrate 110 on the pin 105 is measured using a surface voltmeter. Thereafter, (B) to (F) are repeated a predetermined number of times.

The time during which the insulating substrate is kept in contact with the stage (hereinafter referred to as “contact time”) is from the time when the pin 105 is lowered to start the contact between the glass substrate 110 and the stage 101, To raise the glass substrate 11
This is 10 seconds until the contact between 0 and the stage 101 is released. After the pin 105 is lifted to release the contact between the glass substrate 110 and the stage 101, the potential of the glass substrate 101 is measured. This contact operation is repeated 10 times (hereinafter, referred to as “the number of contacts”).

FIG. 11 shows the potential of the glass substrate with respect to the number of times of contact when the glass substrate is brought into contact with stages at various temperatures. Here, the potential refers to the average potential of the glass substrate, and is the average value of the measurement results of a total of three points, one point at the center and two points at the periphery of the glass substrate (hereinafter referred to as “potential” unless otherwise specified) . The potential increases as the stage temperature increases. In addition, the potential increases as the number of contacts increases, but increases remarkably at the first contact number as compared with other contact numbers. This indicates that the stage temperature is 130 ° C and 150 ° C. This is particularly noticeable.

The phenomenon observed at the first contact count when the potential of the glass substrate rises significantly will be described with reference to FIG. Here, the case where the stage temperature is 130 ° C. will be described, but the same phenomenon is usually observed when the temperature is 100 ° C. or higher. Therefore, a similar phenomenon is observed at, for example, 150 ° C. (A) The temperature of the stage 101 is set to 130 ° C., and the glass substrate 110 is set on the pins 105. (B) When the pins 105 are lowered into the stage 101, the central portion of the glass substrate 110 is convex downward, so that the entire glass substrate 110 cannot uniformly contact the stage 101, and substantially the vicinity of the central portion of the glass substrate 110 Specifically, the glass substrate 110 is in contact with the stage 101 at one point, and the periphery of the glass substrate 110 is floating from the stage 101. (C) When vacuum suction is started, the entire glass substrate 110 comes into contact with the stage 101 and repeats minute vibrations to separate. The cycle of the vibration is about twice per second. Hereinafter, this vibration is referred to as “contact / peeling continuous vibration”. (D) Within several seconds (within 10 seconds), continuous vibration of contact / peeling is substantially not observed, and the glass substrate 110 and the stage 101 come into uniform contact.

The state (B) in which the glass substrate 110 is in contact with the stage 101 at substantially one point near the center thereof and the continuous vibration of contact and peeling in (C) are clearly observed only at the first contact. And was not substantially observed from the second time. Therefore, it is considered that the behaviors (B) and (C), particularly the continuous vibration of contact and peeling, are related to a remarkable rise in the potential of the glass substrate.

In order to investigate the effect of the continuous vibration of contact and peeling on the potential of the glass substrate, the continuous vibration of contact and peeling of the glass substrate generated during the first 10 seconds at a stage temperature of 150 ° C. The number of times the glass substrate came into contact with the stage and separated therefrom (hereinafter, referred to as the “number of vibrations”) was measured. An experiment similar to that in FIG. 11 was performed using three glass substrates. After observing the number of vibrations, the potential of the glass substrates was measured. And the measurement is 10 times of contact.
I went to the first time. The contact / peeling continuous vibration is shown in FIG.
In the same manner as described above, it was clearly observed only at the first contact.

FIG. 13 shows the potential of the glass substrate with respect to the number of times of contact / peeling. The number of times of contact and peeling of the three glass substrates is 5, 9, and 11, respectively. The potential of the glass substrate on the vertical axis represents the potential of the glass substrate after the first contact (the first potential) and the potential of the glass substrate after the tenth contact (1).
(0th potential). As the number of times of contact / peeling increases, the potential of the glass substrate increases.

Since the potential of the glass substrate increases as the number of times of contact / peeling increases, it has been clarified that the continuous vibration of contact / peeling is involved in the generation of static electricity on the glass substrate. Therefore, in order to prevent or suppress the generation of static electricity on the glass substrate, it is important to prevent or suppress continuous contact / peeling vibration of the glass substrate.

In order to examine the influence of the continuous vibration of contact and peeling in more detail, the potential at the first contact of each glass substrate shown in FIG. FIG. 14 is a plot of the potential of the sample and the potential at two peripheral points with respect to the number of vibrations. The average potential is also shown for reference. The potential is high at the center of the glass substrate and low at the periphery of any of the glass substrates. Therefore, it became clear that the in-plane potential of the glass substrate was never uniform.

The phenomenon in which the potentials in the plane are different from each other can be understood as follows. In FIG. 14, as in the case of the glass substrate shown in FIG. 12, when the glass substrate supported by the pins is brought into contact with the stage, the center of the glass substrate has a downward convex shape. At substantially one point in the center, the glass substrate is in contact with the stage. Therefore, the central portion of the glass substrate repeatedly contacts and separates from the stage many times during the continuous vibration of contact and peeling of the glass substrate, while the peripheral portion of the glass substrate repeatedly contacts the stage. Does not repeat contact with the stage as much. Therefore, the central portion of the glass substrate has a high potential, and the peripheral portion has a low potential. From the above results, it is considered that the contact and separation of the glass substrate with the stage due to the occurrence of the contact / peeling continuous vibration on the glass substrate is the cause of the generation of static electricity, and as the number of vibrations in FIG. 13 increases, The result of the potential increase can be explained without contradiction. Furthermore, this result means that the distribution of static electricity generated on the glass substrate can be controlled by changing the shape of the glass substrate in contact with the stage.

Then, what causes the continuous vibration of contact and peeling on the glass substrate? The inventor paid attention to the amount of water as the cause. This is because glass easily absorbs moisture, and the properties of the glass may vary depending on the amount of moisture absorbed. Therefore, the potential of the glass substrate was measured by qualitatively changing the amount of water adsorbed on the glass substrate.

In order to change the amount of water adsorbed, the following 4
Different types of glass were used. (A) 150 ° C. heat treatment: immediately after heat treatment in a 150 ° C. oven, a glass kept hot on a 150 ° C. stage. (B) Desiccator: Glass that has been stored in the desiccator for more than one week. (C) One-day holding: Glass taken out of the desiccator and held for one day in a room having a humidity of 60 to 70% at night. (D) Water drop: Wet Bencott (light cloth),
Glass wiped with water. The water content of these glass substrates is qualitatively determined as (a) 15
0 ° C heat treatment, (b) desiccator, (c) holding for one day,
(D) It is thought that water droplets increase in order.

The temperature of the high-temperature stage is kept constant at 150 ° C.
Assuming that the contact time is 10 seconds and the number of contacts is 10 times, FIG.
An experiment similar to the above was performed, and the potential of each glass substrate was measured. The results are shown in FIG. 15 by plotting the potential of the glass substrate with respect to the number of contacts, together with the results of the stage temperatures of 150 ° C. and 23 ° C. in FIG.

The potential of the glass substrate rises in the order of (a) a heat treatment at 150 ° C., (b) a desiccator, (c) holding for one day, and (d) a water drop, which corresponds to a qualitative increase in the water content of the glass substrate. I do. The glass substrate (a) heat treatment at 150 ° C. and the (b) desiccator show an extremely low potential.
That is, it has been clarified that the generation of static electricity can be prevented or suppressed by reducing the water content.

Although not shown, it was confirmed that the number of vibrations at the first contact frequency was larger for a glass substrate having a higher moisture content. In addition, for both the glass substrate (c) holding for one day and (d) water drops, continuous vibration of contact and peeling of the glass was clearly observed, while the glass substrate (a) heat treatment at 150 ° C and the (b) desiccator In both cases, contact / peeling continuous vibration was hardly observed. Therefore, it became clear that the water content of the glass substrate affected the occurrence of contact / peeling vibration and the number of vibrations.

Incidentally, a glass substrate (b) desiccator,
Regarding (c) holding for one day and (d) water droplets, the warpage of the glass was observed in each case, but no warping of the glass was observed in the glass substrate (a) heat treatment at 150 ° C. Glass substrate (a) In the heat treatment at 150 ° C., no warpage was observed, not because of the problem of water content, but because the temperature difference between the stage and the glass substrate disappeared and the temperature distribution became uniform. .

From the above examination, it has been clarified that the moisture in the glass substrate causes continuous vibration of contact and peeling, causing static electricity. The mechanism by which moisture causes continuous vibration of contact and separation can be considered as follows: When a glass substrate containing moisture is vacuum-adsorbed to a high-temperature stage, the moisture adsorbed on the glass substrate in contact with the stage is heated. The moisture becomes steam by heating and separates from the glass substrate and expands rapidly between the glass substrate and the stage; the steam lifts the glass substrate to form a gap between the stage and the stage, and the gap or vacuum adsorption The glass substrate is again adsorbed to the stage when the water vapor is diffused and discharged; this series of steps is repeated until the glass substrate is free of moisture. That is, the moisture contained in the glass substrate is heated to become water vapor, and the expansion, diffusion and discharge of the water vapor are observed as continuous vibration of contact and separation of the glass substrate, and this vibration causes contact and friction between the stage and the glass substrate. Probably, it is generating static electricity. Further, it is considered that the continuous vibration of contact / peeling gives a large stress to the glass substrate and causes the glass substrate to be damaged in the heat treatment step.

The present invention has been completed on the basis of the above findings. In the method of manufacturing a liquid crystal display device according to the present invention, the heat treatment step of bringing the insulating substrate into contact with the high-temperature stage includes the steps of: Before bringing the insulating substrate into contact with the high-temperature stage, support the insulating substrate on the high-temperature stage using supporting means, and leave a space between the high-temperature stage and the insulating substrate. In the heating atmosphere for a certain time.

Here, the insulating substrate is a substrate having a so-called insulating property, and the degree of the insulating property is not particularly limited. Generally, the electric resistivity may be 10 ¹⁸ Ω · cm or more, preferably 10 ²¹ Ω · cm or more. The shape of the insulating substrate is not particularly limited, but may be generally rectangular, and may be generally plate-shaped. Other elements, for example, an electrode pattern or an alignment film may be formed on the surface. For example, the insulating substrate may be a glass substrate, a plastic substrate, or the like, and specifically, may be a glass substrate having a size of 500 mm × 400 mm.

The high-temperature stage is not particularly limited as long as it applies heat to the substrate to be heat-treated. For example,
The surface is smooth, and a heating means (for example, a heater or the like) is built therein.
° C, preferably 100 to 300 ° C, which is at least larger than the insulating substrate, and usually has a through hole for vacuum suction and a support means, for example, a guide hole for a pin, inside the substrate. For example, it is an aluminum member. Note that the high-temperature stage is usually horizontal.

The heat treatment step is a step of changing at least one property of the substrate by bringing the insulating substrate into contact with a high-temperature stage and heating the same. The heat treatment temperature is usually at least 100 ° C. or higher, preferably 130 ° C. or higher. ° C or higher, and this temperature can be appropriately selected depending on the heat-resistant temperature of the insulating substrate to be used. Usually, the pressure is normal pressure, but the pressure may be reduced. For example, a step of forming a polymer alignment film (for example, a polyimide alignment film) on an insulating substrate is performed by heat treatment.

The supporting means supports the insulating substrate above the high-temperature stage and prevents surface contact between the high-temperature stage and the insulating substrate, and supports the insulating substrate with dots or lines. It is not particularly limited as long as it has a form and hardness that does not damage the part supporting the
Usually, those having good electric conductivity are preferable. For example, it is a column, a pin, or a long object having a rounded tip. These support means are usually installed through the stage, but may be installed from the side of the stage.

In order to create a space, a gap is provided between the insulating substrate and the high-temperature stage so that the insulating substrate and the high-temperature stage do not make at least surface contact. Point contact or line contact may be made.

Further, the certain time means a time during which the amount of static electricity generated when the insulating substrate is brought into contact with the high-temperature stage after the holding is at an acceptable level. The tolerance depends on the intended heat treatment. Therefore, if the tolerance of the amount of static electricity is determined according to the heat treatment, those skilled in the art can easily determine the certain time. For example, it can be determined by a so-called trial and error by repeating an experiment and accumulating data.

Further, the present invention is a manufacturing method using one or more pins as a means for supporting an insulating substrate.

[0034] Further, there is provided a manufacturing method in which a central portion of the insulating substrate is supported, and the insulating substrate is supported for a predetermined time in a state where the insulating substrate is not in contact with the high temperature stage.

Further, there is provided a manufacturing method in which one edge of the insulating substrate is supported so as to be in contact with the high-temperature stage, and the insulating substrate is supported for a predetermined time.

Further, the insulating substrate is supported at three or more places, and in a state where the insulating substrate is not in contact with the high-temperature stage,
This is a manufacturing method for supporting an insulating substrate for a certain time.

Further, there is provided a manufacturing method in which the high-temperature stage is inclined.

[0038] The present invention also relates to a manufacturing method of irradiating the insulating substrate with microwaves or infrared rays.

Further, there is provided a manufacturing method in which a dry gas is blown onto an insulating substrate.

Further, there is provided a manufacturing method in which a dry gas is blown to the lower surface of the insulating substrate from a through hole for vacuum suction provided on the high-temperature stage and / or a side of the insulating substrate.

Further, after the insulating substrate is held above the high-temperature stage, when the supporting means is removed and brought into contact with the high-temperature stage, at least a part of the insulating substrate is pressed against the high-temperature stage by the pressing means. It is.

Further, after the insulating substrate was held above the high-temperature stage, or after the supporting means was removed and pressed down, the entire substrate was brought into contact with the stage and heat-treated, and then brought into contact with the high-temperature stage. This is a manufacturing method in which, when the insulating substrate is peeled off from the high-temperature stage, ions are irradiated from below the surface of the insulating substrate from an ionizer previously embedded in the high-temperature stage.

[0043]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of a method for manufacturing a liquid crystal display device of the present invention will be described with reference to the drawings.

Embodiment 1 FIG. 1 shows a method for manufacturing a liquid crystal display device according to Embodiment 1 of the present invention. In the drawing, reference numeral 1 denotes an insulating substrate, for example, a glass substrate,
Reference numeral denotes a high-temperature stage, for example, an aluminum member, and reference numeral 3 denotes support means for supporting the insulating substrate 1 and providing a space between the insulating substrate 1 and the high-temperature stage 2.

In the first embodiment, before the insulating substrate 1 is brought into contact with the high temperature stage 2, the insulating substrate 1 is supported above the high temperature stage 2 by using In the heating atmosphere generated in the above, the insulating substrate 1 is held for a certain period of time and heated to remove or reduce moisture. Thereafter, heat treatment is performed by bringing the insulating substrate 1 into contact with the high-temperature stage 2. Since the heat treatment is performed in a state where the moisture of the insulating substrate 1 is removed or reduced, it is possible to prevent or suppress the occurrence of the continuous vibration of contact and separation.
Therefore, generation of static electricity and breakage of the insulating substrate 1 can be prevented or suppressed.

FIG. 1 shows an embodiment in which only one support means 3 is provided at the center of the insulating substrate 1.
In another embodiment, one or more of the insulating substrate 1 and the peripheral portion may be provided. Further, the support means 3 may protrude from the inside of the high-temperature stage 2 through the through-hole by any method. Alternatively, they may be arranged from the side or above the high temperature stage 2. As long as a space can be provided between the insulating substrate 1 and the high-temperature stage 2, the number of the support means 3, the portion where the support means 3 supports the insulating substrate 1, the method of arranging the support means 3, and the like are not particularly limited.

Embodiment 2 FIG. 2 shows a method of manufacturing a liquid crystal display device according to a second embodiment of the present invention. Before the insulating substrate 1 is brought into contact with the high-temperature stage 2, the insulating substrate 1 Is supported, and the insulating substrate 1 is held above the high temperature stage 2 in a heating atmosphere for a certain period of time to remove or reduce the water content of the insulating substrate 1. Since the center portion of the insulating substrate is supported by using one pin 4, the insulating substrate 1 has an upwardly convex shape. After the insulating substrate 1 is dried, the pins 4 are moved to the high-temperature stage 2.
To bring the insulating substrate 1 into contact with the high-temperature stage 2. Since the insulating substrate 1 has an upwardly convex shape, the peripheral portion of the insulating substrate 1 mainly comes into contact with the high-temperature stage 2. When the insulating substrate 1 is brought into contact with the high-temperature stage 2, the upwardly convex shape is more stable than the downwardly convex shape (see FIG. 12). In addition, continuous vibration of contact and peeling is less likely to occur, and therefore, the upward convex shape is more preferable than the downward convex shape.

Embodiment 3 FIG. 3 shows a method of manufacturing a liquid crystal display device according to a third embodiment of the present invention, in which one or two or more pins 4 are used along one edge of the insulating substrate 1. Is supported above the high temperature stage 2,
In a state where the insulating substrate 1 is in contact with the high-temperature stage 2 at one edge, the insulating substrate 1 is held for a certain period of time to remove or reduce the water content of the insulating substrate 1. When the insulating substrate 1 is dried, the insulating substrate 1 and the high-temperature stage 2
Are in contact with each other, but the contact area is extremely small because they are in contact at one edge. Therefore, the contact area has substantially no effect on removing or reducing moisture from the surface of the insulating substrate 1 in contact with the high-temperature stage 2, and has little effect on the generation of static electricity.

Embodiment 4 FIG. 4 shows a method of manufacturing a liquid crystal display device according to a fourth embodiment of the present invention. Before the insulating substrate 1 is brought into contact with the high-temperature stage 2, the insulating substrate is used by using three or more pins 4. 1 is supported above the high-temperature stage 2, and the insulating substrate 1 is held for a certain period of time in a state where the insulating substrate 1 is not in contact with the high-temperature stage 2.
Is to remove or reduce the water content.

In the drawing, an embodiment is shown in which the shape of the insulating substrate 1 is substantially flat, but in the fourth embodiment, the pins 4 are insulated by changing the arrangement for supporting the insulating substrate 1. The shape of the conductive substrate 1 can be changed. That is, when the pins 4 are arranged in the peripheral portion of the insulating substrate 1, the shape of the insulating substrate 1 becomes convex downward (see:
(FIG. 12). On the other hand, when the pins 4 are arranged at the center of the insulating substrate 1, the shape of the insulating substrate 1 becomes upwardly convex (see FIGS. 1 and 2).

In the case where the shape of the insulating substrate 1 is upwardly convex, if a small amount of static electricity is generated when the heat treatment is performed while being brought into contact with the high-temperature stage 2, the insulating substrate 1 is more in the peripheral part than in the central part. Can generate static electricity. On the other hand, when the shape of the insulating substrate 1 is convex downward, more static electricity can be generated in the central portion than in the peripheral portion of the insulating substrate 1 (see FIG. 1).
4). Therefore, in this embodiment, the distribution of static electricity generated on the insulating substrate 1 can be controlled by appropriately selecting the arrangement of the pins 4 supporting the insulating substrate 1.

Embodiment 5 FIG. FIG. 5 shows a method of manufacturing a liquid crystal display device according to Embodiment 5 of the present invention. Before the insulating substrate 1 is brought into contact with the high-temperature stage 2, one line is formed along one edge of the insulating substrate 1. Alternatively, the insulating substrate 1 is supported above the inclined high-temperature stage 2 using two or more pins 4, and the insulating substrate 1 is in line contact with the high-temperature stage 2 at a portion other than the edge of the insulating substrate 2. Insulating substrate 1 for a certain time
To remove or reduce the water content of the insulating substrate 1.

The difference between the fifth embodiment and the third embodiment is that the high-temperature stage 2 is inclined. Form 3 and form 5
In each of the above, the insulating substrate 1 may have a shape in which the central portion is convex downward. In the fifth embodiment, since the high-temperature stage 2 is inclined, the insulating substrate 1 can make line contact with the high-temperature stage 2 at a portion other than its edge. In the fifth embodiment, the high-temperature stage 2 is inclined. Therefore, the gap between the insulating substrate 1 and the high-temperature stage 2 can be relatively widened even at the edge of the insulating substrate 1. Therefore, water vapor generated from the insulating substrate 1 can be efficiently removed through the widened gap.

Embodiment 6 FIG. FIG. 6 shows a method of manufacturing a liquid crystal display device according to a sixth embodiment of the present invention. In the fourth embodiment, the method further includes irradiating the insulating substrate 1 with microwaves or infrared rays. is there.
In the figure, reference numeral 5 denotes irradiation with microwaves or infrared rays. Microwave or infrared light is applied to the insulating substrate 1
In particular, by irradiating the surface of the insulating substrate 1 in contact with the high-temperature stage 2, the insulating substrate 1
Of water can be removed or reduced. The support means and the arrangement of the insulating substrate 1 shown in FIG. 6 are as shown in FIG. 4, but Embodiment 6 is not limited to this. Any of the supporting means or the arrangement of the supporting means of the first to fifth embodiments may be used. By irradiating microwaves, infrared rays, or the like, moisture in the insulating substrate 1 can be efficiently removed or reduced.

Embodiment 7 FIG. FIG. 7 shows a method of manufacturing a liquid crystal display device according to a seventh embodiment of the present invention. In the fourth embodiment, a through-hole for vacuum suction (usually moisture When the removed or reduced insulating substrate is brought into contact with the high-temperature stage,
It is used to remove the air between the insulating substrate and the high-temperature stage under reduced pressure. ) Indicates that a dry gas heated at room temperature or heated is blown to the lower surface of the insulating substrate 1. In the figure, reference numeral 6 denotes a through hole, and 7 denotes a dry gas which is heated at normal temperature or heated and does not adversely affect the heat treatment, for example, an inert gas such as air with low moisture, nitrogen or argon (hereinafter referred to as "gas"). . By blowing gas 7 from the through hole 6 to the lower surface of the insulating substrate 1,
Further, the moisture in the insulating substrate 1 can be efficiently removed or reduced in a short time.

Further, steam generated from the insulating substrate 1 by heating the insulating substrate 1 may stay between the insulating substrate 1 and the high-temperature stage 2. The retention of the water vapor hinders the drying of the insulating substrate 1. Therefore, drying of the insulating substrate 1 can be promoted by blowing the gas 7 between the insulating substrate 1 and the high-temperature stage 2 to remove the retained water vapor. The support means for the insulating substrate 1 shown in FIG. 7 and the arrangement thereof are the same as those shown in FIG.
Is not limited to this. Any of the supporting means or the arrangement of the supporting means of the first to fifth embodiments may be used. By blowing the gas 7 on the lower surface of the insulating substrate 1, moisture removal, reduction or drying of the insulating substrate 1 can be efficiently performed. Promotion can be aimed at.

Embodiment 8 FIG. FIG. 8 shows a method for manufacturing a liquid crystal display device according to an eighth embodiment of the present invention. In the fourth embodiment, a gas 7 is introduced from the side of the insulating substrate 1.
Is sprayed on the lower surface of the insulating substrate 1. The eighth embodiment and the seventh embodiment are different in that the place where the gas 7 is blown out is the through hole 6 inside the high-temperature stage 2 in the seventh embodiment, and the side of the insulating substrate 1 in the eighth embodiment. Also in the eighth embodiment, by blowing the gas 7 to the lower surface of the insulating substrate 1, moisture in the insulating substrate 1 can be efficiently removed or reduced in a shorter time, or the insulating substrate 1 and the high-temperature stage can be removed. The drying of the insulating substrate 1 can be promoted by removing or reducing the water vapor that has accumulated between the two. The supporting means for the insulating substrate 1 shown in FIG. 8 and the arrangement thereof are as shown in FIG. 4, but Embodiment 8 is not limited to this. Any of the support means or the arrangement of the support means of the embodiments 1 to 5 may be used.
Is sprayed on the lower surface of the insulating substrate 1 to efficiently remove, reduce, or promote the drying of the insulating substrate 1.

Embodiment 9 FIG. FIG. 9 shows a method for manufacturing a liquid crystal display device according to Embodiment 9 of the present invention. After the insulating substrate is held above the high-temperature stage, when the supporting means is removed and brought into contact with the high-temperature stage, This shows that at least a part of the insulating substrate is pressed against the high-temperature stage by the pressing means. In the figure,
Reference numeral 8 denotes a pressing means. The pressing means 8 may be of any material and shape that does not cause static electricity or damage to the insulating substrate 1. Mechanically pressing the insulating substrate 1 against the stage 2 using the pressing means 8 prevents or suppresses continuous vibration of contact / peeling generated on the insulating substrate 1, and generates static electricity and damages the insulating substrate 1. Can be prevented or suppressed.

Embodiment 10 FIG. FIG. 10 shows a method of manufacturing a liquid crystal display device according to Embodiment 10 of the present invention. After the insulating substrate is held above the high-temperature stage or the supporting means is removed and pressed, After performing heat treatment by bringing the entire substrate into contact with the stage, when the insulating substrate that has been in contact with the high-temperature stage is peeled off from the high-temperature stage, an ionizer embedded in the high-temperature stage in advance is placed under the insulating substrate surface. Indicates that ions are irradiated. In the figure, reference numeral 10 denotes an ionizer. According to the first to tenth embodiments of the present invention, generation of static electricity can be prevented or suppressed, but a small amount of static electricity can be generated. Also, it is necessary to completely remove static electricity. Accordingly, ions generated by the ionizer 10 can be irradiated from the lower surface of the high-temperature stage 2. In the present invention, since the ions generated by the ionizer 10 are irradiated from the through hole 6 of the high-temperature stage 2, the irradiation can be performed without waste.

[0060]

Since the present invention is configured as described above, it has the following effects.

Before the insulating substrate is brought into contact with the high-temperature stage, the insulating substrate is supported by the supporting means above the high-temperature stage, and a space is created between the high-temperature stage and the insulating substrate. After removing or reducing moisture by holding the insulating substrate for a certain period of time in the formed heating atmosphere, the insulating substrate is brought into contact with the high-temperature stage, so it is possible to prevent or suppress continuous vibration of contact and separation. Thus, generation of static electricity and damage to the insulating substrate can be prevented or suppressed.

Before the insulating substrate is brought into contact with the high-temperature stage, the insulating substrate is supported above the high-temperature stage by one or more pins, and a space is created between the high-temperature stage and the insulating substrate. After the moisture is removed or reduced by holding the insulating substrate for a certain period of time in the heating atmosphere formed by the high-temperature stage, the insulating substrate is brought into contact with the high-temperature stage, thereby preventing or suppressing continuous vibration of contact and separation. It is possible to prevent or suppress generation of static electricity and damage to the insulating substrate.

Before the insulating substrate is brought into contact with the high-temperature stage, the center of the insulating substrate is supported above the high-temperature stage, and the insulating substrate is not contacted with the high-temperature stage. After removing or reducing moisture by holding the insulating substrate for a certain period of time in the atmosphere, the insulating substrate is brought into contact with the high-temperature stage, so that continuous vibration of contact and peeling can be prevented or suppressed, and static electricity can be prevented. Generation and breakage of the insulating substrate can be prevented or suppressed.

Before the insulating substrate is brought into contact with the high-temperature stage, the insulating substrate is supported above the high-temperature stage with one edge of the insulating substrate in contact with the high-temperature stage, and the heating formed by the high-temperature stage is performed. Depending on the atmosphere, after removing or reducing moisture by holding the insulating substrate for a certain period of time, contacting the insulating substrate with the high-temperature stage makes it possible to prevent or suppress continuous contact / peeling vibration, Generation and breakage of the insulating substrate can be prevented or suppressed.

Before the insulating substrate is brought into contact with the high-temperature stage, the insulating substrate is supported above the high-temperature stage at at least three points, and is formed by the high-temperature stage in a state where the insulating substrate is not in contact with the high-temperature stage. After the moisture is removed or reduced by holding the insulating substrate for a certain period of time in a heating atmosphere, the insulating substrate is brought into contact with the high-temperature stage to prevent or suppress continuous contact / peeling vibration. In addition, generation of static electricity and damage to the insulating substrate can be prevented or suppressed.

Before the insulating substrate is brought into contact with the high-temperature stage, the insulating substrate is supported above the inclined high-temperature stage with the insulating substrate in line contact with the high-temperature stage at a portion other than the edge of the insulating substrate. After the moisture is removed or reduced by holding the insulating substrate for a certain period of time in the heating atmosphere formed by the high-temperature stage, the insulating substrate is brought into contact with the high-temperature stage to prevent continuous vibration of contact and separation. Alternatively, it is possible to suppress or suppress generation of static electricity and damage to the insulating substrate.

Further, before the insulating substrate is brought into contact with the high-temperature stage, the insulating substrate is irradiated with microwaves or infrared rays to remove or reduce the moisture of the insulating substrate. The contact with the stage makes it possible to prevent or suppress continuous vibration of contact / peeling, thereby preventing or suppressing the generation of static electricity and damage to the insulating substrate.

Furthermore, before the insulating substrate is brought into contact with the high-temperature stage, a dry gas is blown against the insulating substrate to remove water from the insulating substrate or to promote drying. By contacting with, continuous vibration of contact and peeling can be prevented or suppressed, and generation of static electricity and damage to the insulating substrate can be prevented or suppressed.

Before the insulating substrate is brought into contact with the high-temperature stage, a dry gas is blown to the lower surface of the insulating substrate from the through-hole for vacuum suction provided on the high-temperature stage and / or the side of the insulating substrate. This makes it possible to prevent or suppress continuous vibration of contact / peeling by bringing the insulating substrate into contact with the high-temperature stage after removing water or promoting drying of the insulating substrate. Breakage of the substrate can be prevented or suppressed.

Further, after holding the insulating substrate above the high-temperature stage, when the supporting means is removed and brought into contact with the high-temperature stage, at least a portion of the insulating substrate is pressed against the high-temperature stage by the pressing means. In addition, it is possible to prevent or suppress continuous vibration of contact and peeling generated on the insulating substrate, and it is possible to prevent or suppress generation of static electricity and damage to the insulating substrate.

Further, after the insulating substrate is held above the high-temperature stage, or after the supporting means is removed and pressed down, the entire insulating substrate is brought into contact with the stage and heat-treated, and then contacted with the high-temperature stage. When exfoliating the insulating substrate from the high-temperature stage, irradiating ions from below the surface of the insulating substrate with an ionizer embedded in the high-temperature stage in advance to remove the slightly generated static electricity It is possible to prevent the generation of static electricity.

[Brief description of the drawings]

FIG. 1 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 1 of the present invention.

FIG. 2 is a side view of a liquid crystal display device manufacturing method according to a third embodiment of the present invention.

FIG. 3 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 4 of the present invention.

FIG. 4 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 5 of the present invention.

FIG. 5 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 6 of the present invention.

FIG. 6 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 7 of the present invention.

FIG. 7 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 8 of the present invention.

FIG. 8 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 9 of the present invention.

FIG. 9 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 10 of the present invention.

FIG. 10 is a side view of a method for manufacturing a liquid crystal display device according to Embodiment 11 of the present invention.

FIG. 11 shows the potential of the glass substrate with respect to the number of times of contact at various stage temperatures.

FIG. 12 is a side view of continuous contact / peeling vibration of a glass substrate at a stage temperature of 130 ° C.

FIG. 13 shows the potential of the glass substrate with respect to the number of vibrations at a stage temperature of 150 ° C.

FIG. 14 shows the potential of the glass substrate with respect to the number of vibrations at a stage temperature of 150 ° C.

FIG. 15 shows potentials of glass substrates having different moisture contents at a stage temperature of 150 ° C.

FIG. 16 is a perspective view showing an apparatus in a conventional method for manufacturing a liquid crystal display device.

[Explanation of symbols]

1 insulating substrate, 2 stage, 3 support means,
4 pin, 5 microwave or infrared, 6 through hole, 7 gas, 8 pressing means, 9 ionizer.

Claims (11)

[Claims] 1. A method for manufacturing a liquid crystal display device comprising a heat treatment step of bringing an insulating substrate into contact with a high-temperature stage, wherein the insulating substrate is brought into contact with the high-temperature stage by using a supporting means before the insulating substrate is brought into contact with the high-temperature stage. A liquid crystal display device characterized in that the insulating substrate is held for a certain period of time in a heating atmosphere formed by the high-temperature stage in a state where a space is created between the high-temperature stage and the insulating substrate. Production method. 2. The method according to claim 1, wherein the support means is one or more pins. 3. The manufacturing method according to claim 1, wherein the insulating substrate is held for a predetermined time while supporting the central portion of the insulating substrate and the insulating substrate is not in contact with the high-temperature stage. . 4. The method according to claim 1, wherein one edge of the insulating substrate is supported so as to be in contact with the high-temperature stage, and the insulating substrate is held for a predetermined time. 5. An insulating substrate is supported at three or more points,
The method according to claim 1, wherein the insulating substrate is held for a predetermined time while the insulating substrate is not in contact with the high-temperature stage. 6. The method according to claim 1, wherein the high-temperature stage is inclined. 7. The method according to claim 1, wherein the insulating substrate is irradiated with microwaves or infrared rays. 8. The method according to claim 1, wherein a dry gas is blown onto the insulating substrate. 9. The manufacturing method according to claim 8, wherein a dry gas is blown onto a lower surface of the insulating substrate from a through hole for vacuum suction provided on the high temperature stage and / or a side of the insulating substrate. . 10. After the insulating substrate is held above the high-temperature stage, when the supporting means is removed and brought into contact with the high-temperature stage, the pressing means presses at least a part of the insulating substrate against the high-temperature stage. The method according to any one of claims 1 to 9, wherein: 11. After the insulating substrate is held above the high-temperature stage, or after the supporting means is removed and pressed down, the entire insulating substrate is brought into contact with the stage and heat-treated.
When the insulating substrate brought into contact with the high-temperature stage is peeled off from the high-temperature stage, ions are irradiated from below the surface of the insulating substrate from an ionizer previously embedded in the high-temperature stage. Item 11. The production method according to any one of Items 10.