JP2000068245A5

JP2000068245A5 -

Info

Publication number: JP2000068245A5
Application number: JP1998231727A
Authority: JP
Filing date: 1998-08-18
Publication date: 2005-10-20

Description

〔２〕上記〔１〕記載の半導体ウエハ乾燥方法において、前記ＨＦ水溶液を７０℃以上とすることにより、疎水性、親水性を問わずウエハを高速で乾燥させるようにしたものである。
〔３〕上記〔１〕記載の半導体ウエハ乾燥方法において、乾燥時の雰囲気温度をＨＦ水溶液の液温以下にして、低温ＨＦ水溶液の使用により、ウエハの膜の均一性を確保するようにしたものである。
〔４〕半導体ウエハ乾燥方法において、半導体ウエハをＨＦ水溶液に浸漬する工程と、前記ＨＦ水溶液から、１〜２ｍｍ／ｓｅｃの速度で前記半導体ウエハを引き上げる工程とを含むようにしたものである。 [2] In the semiconductor wafer drying method described in [1] above, the HF aqueous solution is set to 70 ° C. or higher to dry the wafer at high speed regardless of hydrophobicity or hydrophilicity.
[3] In the semiconductor wafer drying method described in [1] above, the atmospheric temperature at the time of drying is set to be equal to or lower than the liquid temperature of the HF aqueous solution, and the uniformity of the wafer film is ensured by using the low temperature HF aqueous solution. Is.
[4] The semiconductor wafer drying method includes a step of immersing the semiconductor wafer in the HF aqueous solution and a step of pulling up the semiconductor wafer from the HF aqueous solution at a rate of 1 to 2 mm / sec.

Claims

(A) HF aqueous solution immersion step;
(B) A method for drying a semiconductor wafer, comprising: sequentially pulling up the semiconductor wafer so that no water droplets remain on the semiconductor wafer due to the surface tension of the HF aqueous solution.

The semiconductor wafer drying method according to claim 1, wherein the wafer is dried at high speed regardless of hydrophobicity or hydrophilicity by setting the HF aqueous solution to 70 ° C. or higher.

2. The semiconductor wafer drying method according to claim 1, wherein the uniformity of the film of the wafer is ensured by using the low temperature HF aqueous solution by lowering the atmospheric temperature during drying to the liquid temperature of the HF aqueous solution. .

(A) immersing the semiconductor wafer in an HF aqueous solution;
(B) pulling up the semiconductor wafer from the aqueous HF solution at a rate of 1 to 2 mm / sec;
A method for drying a semiconductor wafer, comprising: