JP2000064959A - Exhaust system - Google Patents

Exhaust system

Info

Publication number
JP2000064959A
JP2000064959A JP10231287A JP23128798A JP2000064959A JP 2000064959 A JP2000064959 A JP 2000064959A JP 10231287 A JP10231287 A JP 10231287A JP 23128798 A JP23128798 A JP 23128798A JP 2000064959 A JP2000064959 A JP 2000064959A
Authority
JP
Japan
Prior art keywords
exhaust
pressure
gas
control valve
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10231287A
Other languages
Japanese (ja)
Other versions
JP3560476B2 (en
Inventor
Toru Nagasawa
亨 長澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Machinery Inc
Original Assignee
Nichiden Machinery Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichiden Machinery Ltd filed Critical Nichiden Machinery Ltd
Priority to JP23128798A priority Critical patent/JP3560476B2/en
Publication of JP2000064959A publication Critical patent/JP2000064959A/en
Application granted granted Critical
Publication of JP3560476B2 publication Critical patent/JP3560476B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To enlarge a regulation range of an exhaust speed by a method wherein an exhaust impedance regulator and an exhaust pump varying an exhaust speed through drive of an inverter are arranged in series, in an exhaust device to regulate a container to a given internal pressure by effecting exhaust as gas is fed in the container. SOLUTION: When carrier gas is fed from a gas introduction pipe 12 to a reaction container 11 and exhaust operation is started, an exhaust pump 16 communicated with an exhaust pipe 14 through a control valve (an exhaust impedance regulator) 15 is started. In this case, the opening of the control valve 15 is fixed to a set value, and the frequency of an inverter 18 to drive the exhaust pump 16 is linearly increased. When the output value of a pressure gauge 13 attains a set value, a control valve 15 is slightly closed trough a pressure control part 17b by the main control part 17a of a controller 17 and a pressure value is regulated to the set value. Thereafter, when a container is brought into a steady control state, reaction gas is also introduced through a gas introduction pipe 12 to effect formation of a film.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明はスパッタ装置とか
CVD装置のように容器内にガスを供給しつつその供給
にバランスした排気を行なって容器内を所定の圧力に制
御する排気装置に関し、特にMO−VPE(有機金属気
相エピタキシャル成長)装置は多層膜の成長に使用され
るので条件の幅が広くしたがって排気速度の広い範囲で
の調節が求められるが、このような広いレンジで排気速
度を調節して安定な圧力調節が得られる排気装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust system which supplies gas into a vessel and controls the pressure in the vessel to a predetermined pressure while supplying gas into the vessel, such as a sputtering apparatus or a CVD apparatus. Since the -VPE (metal-organic vapor phase epitaxy) apparatus is used for growing a multilayer film, the conditions are wide, and therefore it is required to adjust the pumping speed in a wide range. The present invention relates to an exhaust device capable of obtaining stable pressure regulation.

【0002】[0002]

【従来の技術】従来装置の例を図面を用いて説明する。
図3はそれを概念的に示す図面である。図において1は
例えばCVD装置の反応容器であり所定の温度に加熱さ
れるものであるが本発明の要点には関係がないので説明
を省略する。反応容器1はガス導入管2を備え、材料ガ
スやキャリアガスが導入される。更に圧力計3を備え設
定値と比較するようになっている。又、排気管4を備え
る。排気管4の先には排気インピーダンスを調節するコ
ントロールバルブ5と排気ポンプ6とが直列につながっ
た排気装置がつながっている。そして圧力計3の値と設
定した値と比較してその結果によりコントロールバルブ
5を制御するコントローラ7を備えている。
2. Description of the Related Art An example of a conventional apparatus will be described with reference to the drawings.
FIG. 3 is a diagram conceptually showing the above. In the figure, reference numeral 1 denotes, for example, a reaction vessel of a CVD apparatus, which is heated to a predetermined temperature, but has no relation to the gist of the present invention, so that the description is omitted. The reaction vessel 1 is provided with a gas introduction pipe 2, and a material gas and a carrier gas are introduced. Further, a pressure gauge 3 is provided to compare with a set value. Further, an exhaust pipe 4 is provided. At the end of the exhaust pipe 4, an exhaust device in which a control valve 5 for adjusting exhaust impedance and an exhaust pump 6 are connected in series is connected. A controller 7 is provided for controlling the control valve 5 based on the result of comparing the value of the pressure gauge 3 with the set value.

【0003】膜成長時にはガス導入管2より材料ガスや
キャリアガスを所定流量供給し、排気管4より未反応ガ
ス、反応により生成されたガス、キャリアガス等がコン
トロールバルブ5を介して排気ポンプ6により排気され
る。そして反応容器1内の圧力は導入されるガスの流
量、反応による増減、排気速度、反応容器1内の温度等
のバランスで定まる。そして圧力の設定は成長させる膜
の種類や材料ガス等に応じて適当な値に選ばれる。そこ
で、圧力計3の値が設定値より高い時にはコントローラ
7はコントロールバルブ5を開き排気速度を上げる。そ
して、圧力計3の値が設定値より低い時にはコントロー
ラ7はコントロールバルブ5を閉じ排気速度を小さくす
る。
At the time of film growth, a material gas and a carrier gas are supplied at a predetermined flow rate from a gas introduction pipe 2, and an unreacted gas, a gas generated by the reaction, a carrier gas and the like are supplied from an exhaust pipe 4 via a control valve 5 to an exhaust pump 6. Exhausted by The pressure in the reaction vessel 1 is determined by the balance of the flow rate of the introduced gas, the increase / decrease due to the reaction, the pumping speed, the temperature in the reaction vessel 1, and the like. The pressure is set to an appropriate value according to the type of the film to be grown, the material gas, and the like. Therefore, when the value of the pressure gauge 3 is higher than the set value, the controller 7 opens the control valve 5 to increase the pumping speed. When the value of the pressure gauge 3 is lower than the set value, the controller 7 closes the control valve 5 to reduce the exhaust speed.

【0004】この装置における排気ポンプ6はほぼ一定
のパワーで排気していて、コントロールバルブ5により
見かけの排気速度を制御するものである。
An exhaust pump 6 in this apparatus exhausts gas with almost constant power, and controls an apparent exhaust speed by a control valve 5.

【0005】[0005]

【発明が解決しようとする課題】例えば種々の材質の化
合物半導体の多層膜を形成するMO−VPE装置のよう
に材料ガスの種類が種々あり、成膜する膜も種々あり、
従って供給する材料ガスの流量や成膜時の圧力も幅の広
い調整範囲を要求され設備に上記したような構成を適用
しようとすると調整範囲が十分でない。そこでこの発明
は排気速度の調整範囲を拡大した排気装置を提供する。
There are various types of material gases, for example, MO-VPE apparatuses for forming multi-layer films of compound semiconductors of various materials, and various films are formed.
Therefore, the flow rate of the supplied material gas and the pressure at the time of film formation are required to have a wide adjustment range, and the adjustment range is not sufficient when applying the above-described configuration to equipment. Therefore, the present invention provides an exhaust device in which the adjustment range of the exhaust speed is expanded.

【0007】[0007]

【課題を解決するための手段】上記の課題を解決するた
めにこの発明の排気装置は容器にガスを供給しつつ排気
して容器内を所定の圧力に調節する排気装置であって、
排気インピーダンス調節器とインバータ駆動による排気
速度可変な排気ポンプとを直列に配置した事をを特徴と
する。この構成によれば排気速度の大きい状態で制御す
る場合は排気ポンプの回転を高めてた状態で維持して排
気インピーダンス調整器で容器の圧力を制御するとか、
逆に排気インピーダンス調整器を開いた(抵抗の低い)
状態で維持し排気ポンプの回転速度で制御しても良い。
排気速度の小さい状態で制御する場合は排気ポンプの回
転を低く維持して排気インピーダンス調整器で容器の圧
力を制御するとか、逆に排気インピーダンス調整器を絞
った(抵抗の高い)状態で維持し圧力を排気ポンプの回
転速度で制御しても良い。そのようにすれば排気速度の
制御を広い範囲とすることが出来る。
In order to solve the above-mentioned problems, an exhaust device according to the present invention is an exhaust device which exhausts gas while supplying gas to the container and adjusts the inside of the container to a predetermined pressure.
The invention is characterized in that an exhaust impedance controller and an exhaust pump whose inverter-driven variable exhaust speed is variable are arranged in series. According to this configuration, when controlling in a state where the exhaust speed is high, maintaining the state where the rotation of the exhaust pump is increased and controlling the pressure of the container with the exhaust impedance adjuster,
Conversely, the exhaust impedance adjuster was opened (low resistance)
The state may be maintained and controlled by the rotation speed of the exhaust pump.
When controlling at a low pumping speed, keep the rotation of the pump low and control the pressure of the vessel with the pump impedance adjuster, or conversely, keep the pump impedance regulator squeezed (high resistance). The pressure may be controlled by the rotation speed of the exhaust pump. By doing so, it is possible to control the exhaust speed in a wide range.

【0008】[0008]

【発明の実施の形態】この発明の一実施例を図面を用い
て説明する。図1はそれを概念的に示す図面である。図
において11はMO−VPE装置反応容器であり所定の
温度に加熱されるものであるが本発明の要点には関係が
ないので説明を省略する。反応容器11はガス導入管1
2を備え、材料ガスやキャリアガスが導入される。更に
圧力計13を備え設定値と比較するようになっている。
又、排気管14を備える。排気管14の先には排気イン
ピーダンスを調節するコントロールバルブ15と排気ポ
ンプ16とが直列につながった排気装置がつながってい
る。この排気ポンプ16はインバータ18により駆動制
御され回転速度可変である。そしてコントローラ17が
インバータ18に排気ポンプの回転速度(排気速度)を
指示するとともに圧力計13の値と設定された値と比較
してその結果によりコントロールバルブ15を制御す
る。即ちコントローラ17は主制御部17aと圧力制御
部17bとを含んでいる。主制御部17aは圧力制御部
17b、インバータ18を制御すると共に全体的な制御
を行ない、圧力制御部17bは時々刻々の圧力計の値と
設定値とを比較してその結果によりコントロールバルブ
15を制御するものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a drawing conceptually showing this. In the figure, reference numeral 11 denotes a reaction vessel of an MO-VPE apparatus which is heated to a predetermined temperature, but has no relation to the gist of the present invention, so that the description is omitted. The reaction vessel 11 is a gas introduction pipe 1
2 and a material gas and a carrier gas are introduced. Further, a pressure gauge 13 is provided to compare with a set value.
Further, an exhaust pipe 14 is provided. At the end of the exhaust pipe 14 is connected an exhaust device in which a control valve 15 for adjusting exhaust impedance and an exhaust pump 16 are connected in series. The exhaust pump 16 is driven and controlled by an inverter 18 and has a variable rotation speed. Then, the controller 17 instructs the inverter 18 on the rotation speed (exhaust speed) of the exhaust pump, compares the value of the pressure gauge 13 with the set value, and controls the control valve 15 based on the result. That is, the controller 17 includes a main controller 17a and a pressure controller 17b. The main control unit 17a controls the pressure control unit 17b and the inverter 18 and performs overall control. The pressure control unit 17b compares the value of the pressure gauge with the set value every moment, and controls the control valve 15 based on the result. To control.

【0009】次に、この装置の排気条件の設定に付いて
説明する。図2(a)はコントロールバルブ15の開度
の時間的経緯を示すグラフであり、図2(b)はインバ
ータ18の出力周波数(排気ポンプ16の回転数)の時
間的経緯を示すグラフであり、図2(c)は圧力計13
の出力値の時間的経緯を示すグラフである。これらのグ
ラフに示す以下の各条件を予め設定しておかねばならな
い。なお、説明の順番に設定する必要はない。 a)コントロールバルブ15の排気立ち上げ時の開度
F:極端に開いたり、閉じすぎたりしない程度に中間的
な値で良い。 b)排気開始時T0のインバータ周波数A:これは当初
急激に排気すると風により反応容器11内に風が起こり
ダストが舞い上がるような不都合が生じるので低い値に
設定する。 c)コントロールする圧力値B:この設定値と圧力計1
3の出力値とを比較して制御が行なわれる。 d)コントロール時のインバータ周波数C:圧力を一定
にコントロールしている時は一定にして(従って排気ポ
ンプの能力を固定して)コントロールバルブ15により
制御する。この値は供給するガスの流量やコントロール
する圧力値等を考慮してこの時コントロールバルブ15
の開度が制御性の良い20〜30%になるように選ぶ。 e)インバータ周波数立ち上げ時の変曲点D(T0から
の時間tDと周波数Df):想定した減圧のカーブに応
じて設定する。 f)インバータが定周波C動作に入る点Eまでの時間t
E:設定圧力Bに到達する時刻T1は点Dより後で点E
より前になるように設定する。 g)排気ストップ信号時T2から排気ポンプ16が止ま
るまでの時間toff
Next, the setting of the exhaust conditions of the apparatus will be described. FIG. 2A is a graph showing the time history of the opening degree of the control valve 15, and FIG. 2B is a graph showing the time history of the output frequency of the inverter 18 (the rotation speed of the exhaust pump 16). FIG. 2C shows the pressure gauge 13.
6 is a graph showing the time course of the output values of FIG. The following conditions shown in these graphs must be set in advance. It is not necessary to set in the order of description. a) The opening F of the control valve 15 when the exhaust gas is started up: An intermediate value may be used so as not to open or close too much. b) Inverter frequency A at the start of evacuation T0: This is set to a low value because abrupt initial evacuation causes inconveniences such as winds in the reaction vessel 11 caused by air and dust soaring. c) Pressure value B to be controlled: this set value and pressure gauge 1
The control is performed by comparing with the output value of No. 3. d) Inverter frequency C at the time of control: When the pressure is controlled to be constant, it is kept constant (therefore, the capacity of the exhaust pump is fixed) and controlled by the control valve 15. At this time, the control valve 15 is used in consideration of the flow rate of the supplied gas and the pressure value to be controlled.
Is selected such that the opening degree of the control is 20 to 30% with good controllability. e) Inflection point D (time tD from T0 and frequency Df) at the start of inverter frequency: Set according to the assumed pressure reduction curve. f) Time t until point E where the inverter enters constant frequency C operation
E: Time T1 at which set pressure B is reached is later than point D at point E
Set to be earlier. g) Time toff from exhaust stop signal time T2 until exhaust pump 16 stops.

【0010】次に動作に付いて説明する。ガス導入管1
2よりキャリアガスを所定流量供給して排気動作をスタ
ートさせると、排気管14よりコントロールバルブ15
を介して排気ポンプ16により排気されはじめる。その
際コントロールバルブ15の開度は設定値Fに固定さ
れ、排気ポンプ16を駆動するインバータ18の周波数
は当初設定値Aで始まりD点の周波数Dfに向けリニア
に上昇する。その後E点に向けてより緩やかな上昇勾配
で周波数が増大する。E点に到達前の時刻T1に圧力計
13の出力値が設定値Bに達すると主制御部17aは圧
力制御部17bを働かせ圧力コントロールが始まる。そ
うすると圧力制御部17bに制御されてコントロールバ
ルブ15が少し閉まって圧力を設定値Bにコントロール
する。以後は刻々の圧力計13の出力値に応じてコント
ロールバルブ15の開度が調節される。その後点Eに達
して以後は排気ポンプの回転は一定となって圧力調整は
コントロールバルブの開度調節のみとなって定常制御状
態に入る。そうするとガス導入管12よりキャリアガス
に加えて反応ガスも導入して成膜が行われる。反応ガス
の量はキャリアガスの量に比較して少ないので導入当初
においても圧力の乱れは小さくて制御はすぐに回復す
る。
Next, the operation will be described. Gas inlet pipe 1
When the exhaust operation is started by supplying a predetermined flow rate of the carrier gas from the control valve 15, the control valve 15
Through the exhaust pump 16 via the pump. At this time, the opening of the control valve 15 is fixed at the set value F, and the frequency of the inverter 18 for driving the exhaust pump 16 starts at the initial set value A and linearly increases toward the frequency Df at the point D. Thereafter, the frequency increases with a gentler rising gradient toward the point E. When the output value of the pressure gauge 13 reaches the set value B at time T1 before reaching the point E, the main control unit 17a activates the pressure control unit 17b to start pressure control. Then, the pressure is controlled by the pressure control unit 17b, the control valve 15 is slightly closed, and the pressure is controlled to the set value B. Thereafter, the opening of the control valve 15 is adjusted according to the output value of the pressure gauge 13 every moment. Thereafter, after reaching point E, the rotation of the exhaust pump becomes constant, and the pressure adjustment is performed only by adjusting the opening of the control valve, thereby entering a steady control state. Then, a reaction gas is introduced from the gas introduction pipe 12 in addition to the carrier gas to form a film. Since the amount of the reaction gas is smaller than the amount of the carrier gas, the disturbance of the pressure is small even at the beginning of the introduction, and the control is restored immediately.

【0011】所定の成膜が終わって時刻T2にストップ
信号が与えられると反応ガスは止められ、設定したto
ff時間の間にインバータ18の周波数が排気ポンプ1
6が機能しない所までリニアに下がる。そうすると排気
ポンプ16排気能力が低くなって行くので圧力制御部1
7bの制御によりコントロールバルブ15は全開となる
が、さらに排気ポンプ16の排気量が低くなると反応容
器の圧力は上昇して行く。そして排気ポンプ16が停止
して動作を終える。
When a stop signal is given at time T2 after the completion of the predetermined film formation, the reaction gas is stopped and the set to
During the time ff, the frequency of the inverter 18 is changed to the exhaust pump 1
6 drops linearly to the point where it does not work. Then, since the exhaust capacity of the exhaust pump 16 decreases, the pressure control unit 1
The control valve 15 is fully opened by the control of 7b, but the pressure in the reaction vessel increases as the exhaust amount of the exhaust pump 16 further decreases. Then, the exhaust pump 16 stops and the operation ends.

【0012】上記実施例の説明は1種類の成膜に付いて
説明したが、この装置で種々の成膜を行なうにそれぞれ
排気条件を異ならせる必要があればそれぞれの設定を記
憶させ、切り替え適用するようにすれば良い。また、多
層膜の形成に用いる場合も同様である。
Although the above embodiment has been described with reference to one type of film formation, if it is necessary to use different exhaust conditions for performing various types of film formation with this apparatus, the respective settings are stored and the switching application is performed. You should do it. The same applies to the case where it is used for forming a multilayer film.

【0013】この装置によれば排気ポンプの能力を可変
に設定できるので、コントロールバルブによる圧力制御
をもっとも制御性の良い開度の当たりで行なえるので安
定した制御が行なえる。また、制御出来る範囲が格段に
広くなる。
According to this device, the capacity of the exhaust pump can be variably set, so that the pressure control by the control valve can be performed at the opening with the best controllability, so that stable control can be performed. Further, the controllable range is significantly widened.

【0014】[0014]

【発明の効果】以上説明したようにこの発明の排気装置
によれば広い排気速度の可変範囲が得られ、容器内の圧
力を制御するのにより広い条件に対応できる。
As described above, according to the exhaust system of the present invention, a wide variable range of the exhaust speed can be obtained, and a wider range of conditions can be controlled by controlling the pressure in the container.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 この発明の一実施例を示すブロック図であ
る。
FIG. 1 is a block diagram showing one embodiment of the present invention.

【図2】 その動作状態をグラフ(タイムチャート)で
あり、(a)はコントロールバルブの開度の時間的経緯
を示す。(b)はインバータ18出力周波数(排気ポン
プ16の回転数)の時間的経緯を示す。(c)は圧力計
13の出力値の時間的経緯を示す。
FIG. 2 is a graph (time chart) showing the operation state, and FIG. 2 (a) shows the time course of the opening degree of the control valve. (B) shows the time history of the output frequency of the inverter 18 (the rotation speed of the exhaust pump 16). (C) shows the time history of the output value of the pressure gauge 13.

【図3】 従来の装置を示すブロック図である。FIG. 3 is a block diagram showing a conventional device.

【符号の説明】[Explanation of symbols]

11 反応容器(容器) 12 ガス供給管 13 圧力計 14 排気管 15 コントロールバルブ(排気インピーダンス調節
器) 16 排気ポンプ 17 コントローラ 17a 主制御部 17b 圧力制御部 18 インバータ
Reference Signs List 11 reaction vessel (vessel) 12 gas supply pipe 13 pressure gauge 14 exhaust pipe 15 control valve (exhaust impedance adjuster) 16 exhaust pump 17 controller 17a main control section 17b pressure control section 18 inverter

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】容器にガスを供給しつつ排気して容器内を
所定の圧力に調節する排気装置であって、排気インピー
ダンス調節器とインバータ駆動による排気速度可変な排
気ポンプとを直列に配置した排気装置。
1. An exhaust device for adjusting the inside of a container to a predetermined pressure by exhausting gas while supplying gas to the container, wherein an exhaust impedance controller and an exhaust pump having a variable exhaust speed driven by an inverter are arranged in series. Exhaust device.
【請求項2】一定圧力に制御する定常制御状態におい
て、前記排気ポンプの排気速度は固定した運転とし、前
記排気インピーダンス調節器により制御する請求項1に
記載の排気装置。
2. The exhaust device according to claim 1, wherein in a steady control state in which the pressure is controlled to be constant, the exhaust speed of the exhaust pump is fixed, and the exhaust pump is controlled by the exhaust impedance adjuster.
【請求項3】一定圧力に制御する定常制御状態におい
て、前記排気インピーダンス調節器は固定した運転と
し、前記排気ポンプの排気速度を調節して制御する請求
項1に記載の排気装置。
3. The exhaust device according to claim 1, wherein in a steady control state in which the pressure is controlled to be constant, the exhaust impedance adjuster operates in a fixed manner, and controls the exhaust speed of the exhaust pump by adjusting the exhaust speed.
JP23128798A 1998-08-18 1998-08-18 Exhaust device Expired - Fee Related JP3560476B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23128798A JP3560476B2 (en) 1998-08-18 1998-08-18 Exhaust device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23128798A JP3560476B2 (en) 1998-08-18 1998-08-18 Exhaust device

Publications (2)

Publication Number Publication Date
JP2000064959A true JP2000064959A (en) 2000-03-03
JP3560476B2 JP3560476B2 (en) 2004-09-02

Family

ID=16921249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23128798A Expired - Fee Related JP3560476B2 (en) 1998-08-18 1998-08-18 Exhaust device

Country Status (1)

Country Link
JP (1) JP3560476B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007071200A (en) * 2005-08-12 2007-03-22 Ebara Corp Evacuating device and method, and substrate processing apparatus and method
CN106435520A (en) * 2016-11-22 2017-02-22 上海华力微电子有限公司 Furnace tube tail gas treatment pipeline
CN109037117A (en) * 2018-09-04 2018-12-18 长江存储科技有限责任公司 Pressure regulation device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6385268A (en) * 1986-09-26 1988-04-15 Hitachi Ltd Vacuum exhausting device
JPH01161836A (en) * 1987-12-18 1989-06-26 Nec Corp Vacuum treatment device
JPH0267472A (en) * 1988-09-02 1990-03-07 Nippon Soken Inc Pressure control method for vacuum equipment
JPH03982A (en) * 1989-05-29 1991-01-07 Hitachi Electron Eng Co Ltd Vacuum chamber pressure control system
JPH03107599A (en) * 1989-09-20 1991-05-07 Ntn Corp Control system of axial-flow pump device
JPH0441991A (en) * 1990-06-01 1992-02-12 Hitachi Ltd Instantly stopping/restarting device and vacuum pump device with the same
JPH06137269A (en) * 1992-10-28 1994-05-17 Furukawa Electric Co Ltd:The Pressure regulating method for vacuum pump

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6385268A (en) * 1986-09-26 1988-04-15 Hitachi Ltd Vacuum exhausting device
JPH01161836A (en) * 1987-12-18 1989-06-26 Nec Corp Vacuum treatment device
JPH0267472A (en) * 1988-09-02 1990-03-07 Nippon Soken Inc Pressure control method for vacuum equipment
JPH03982A (en) * 1989-05-29 1991-01-07 Hitachi Electron Eng Co Ltd Vacuum chamber pressure control system
JPH03107599A (en) * 1989-09-20 1991-05-07 Ntn Corp Control system of axial-flow pump device
JPH0441991A (en) * 1990-06-01 1992-02-12 Hitachi Ltd Instantly stopping/restarting device and vacuum pump device with the same
JPH06137269A (en) * 1992-10-28 1994-05-17 Furukawa Electric Co Ltd:The Pressure regulating method for vacuum pump

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007071200A (en) * 2005-08-12 2007-03-22 Ebara Corp Evacuating device and method, and substrate processing apparatus and method
CN106435520A (en) * 2016-11-22 2017-02-22 上海华力微电子有限公司 Furnace tube tail gas treatment pipeline
CN109037117A (en) * 2018-09-04 2018-12-18 长江存储科技有限责任公司 Pressure regulation device
CN109037117B (en) * 2018-09-04 2023-11-28 长江存储科技有限责任公司 Pressure adjusting device

Also Published As

Publication number Publication date
JP3560476B2 (en) 2004-09-02

Similar Documents

Publication Publication Date Title
US6142163A (en) Method and apparatus for pressure control in vacuum processors
US8297311B2 (en) Controlling gas partial pressures for process optimization
JP4865948B2 (en) Method and apparatus for stabilizing plasma
US7381650B2 (en) Method and apparatus for process control in time division multiplexed (TDM) etch processes
JPH0231408B2 (en)
JP2000064959A (en) Exhaust system
US11774989B2 (en) Pulse shot-type flow rate control device, pulse shot-type flow rate control method, and program
JP2008248395A (en) Plasma treating apparatus and pressure control method of plasma treating apparatus
JPS6317520A (en) Pressure controller for chemical vapor growth device
JPH1015378A (en) Method for controlling pressure of vacuum treatment chamber
JPH0969515A (en) Vacuum processing system for semiconductor production system
JPH09317641A (en) Vacuum exhauster
JP2002363755A (en) Plasma treating apparatus and pressure control method of plasma treating apparatus
JPS6278615A (en) Pressure control method
JPS6369227A (en) Pressure controlling method and device in etching equipment
JPS6332180A (en) Vacuum pump controlling method
JPH0574719A (en) Vapor growth device
JP2003002787A (en) Device for evacuating single crystal pulling vessel
JP2002316035A (en) Evacuation apparatus and method, semiconductor and manufacturing method for liquid crystal substrate
JPH05198513A (en) Method for supplying gas into low pressure treatment device
JP2001241841A (en) Method and apparatus for controlling pressure for air separator
JPS6025232A (en) Pressure regulation of semiconductor manufacturing device
JP2003278681A (en) Vacuum exhaust system and its operation method
CN116149399A (en) Temperature control device and temperature control method of refrigerating system
JPH0799481B2 (en) Semiconductor wafer processing method and processing apparatus used in the method

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20040428

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20040525

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080604

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090604

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100604

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees