JP2000058607A - Standard sample wafer and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To distribute and attach standard particles uniformly on a wafer surface by one-time coating, and to execute the sensitivity calibration of a surface inspection device accurately by charging the surface of a standard sample wafer under the state in which the surface of the wafer has positive potential. SOLUTION: The standard sample wafer 11 is coated with standard particles 31 for use for the sensitivity calibration of a surface inspection device and composed of a bare wafer 12 and a P-TEOS film 13 and the surface of the P-TEOS film 13 is charged under the state in which the surface of the film 13 has positive potential. Consequently, when the surface of the standard sample wafer 11 is coated with the standard particles 31 normally having negative potential, the standard particles 31 adhere without being attracted to the edge side of the standard sample wafer 11 from the surface of the standard sample wafer 11. Accordingly, when the surface of the standard sample wafer 11 is coated with the standard particles 31 so as to be uniformly distributed, the standard particles 31 can be distributed and attached equally onto the surface of the standard sample wafer 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a standard sample wafer and a method for manufacturing the same, and more particularly, to a wafer whose surface is subjected to plasma treatment, for example, a P-TEOS film [plasma C using tetraethoxysilane (TEOS) as a source gas].
The present invention relates to a standard sample wafer formed by using a wafer on which a film formed by a VD method), a P-SiN film (an SiN film formed by a plasma CVD method) and the like are formed, and a method of manufacturing the same.

[0002]

2. Description of the Related Art When a solution containing standard particles is applied to a sensitivity calibration sample wafer of a surface inspection apparatus, a bare (Bare) solution is applied.
Only on a sample wafer having a P-TEOS film formed on a silicon wafer, a relatively small particle size (for example, 2.0 μm
The following phenomenon has occurred: standard particles having the following particle size) gather near the edge of the wafer.

[0003] A method for manufacturing a standard sample wafer used for a measuring instrument such as a standard inspection apparatus has not been established. Until now, a sample in a state close to an actual process has been collected, and almost the same sample having a negative charge in pure water has been collected. Standard particles having a particle size are mixed to form a liquid mixture, and the liquid mixture is sprayed onto the wafer by a spray method and applied.

[0004]

However, as shown in FIG. 3, a P-TEO
The standard sample wafer 111 on which the S film 113 (for example, the film thickness is 300 nm) is formed is a P-TEOS film 113.
-4 V to a depth of about 100 nm from the surface of
It was charged to about 7V. When the base film (P-TEOS film 113) on which the mixed liquid containing the standard particles is sprayed has a negative charge, the standard particles 1 having the same negative charge
Numerals 31 adhere to the standard sample wafer 111 in a non-uniform manner near the edge thereof.

Therefore, in order to eliminate the deviation, standard particle application work is performed a plurality of times so as to supplement the standard particles in a portion where the distribution of the standard particles is small, and the distribution of the standard particles on the wafer surface becomes uniform. Was like that. However, in this coating method, the coating operation of the standard particles is performed a plurality of times, which requires a long time for the coating operation, and the probability that the particles are densely coated to generate a combined body of the standard particles is increased. So-called doublets and triplets were formed as double and triple conjugates. For this reason, the sensitivity calibration of the surface inspection apparatus cannot be accurately performed using the standard sample wafer, which has caused an erroneous detection.

[0006]

SUMMARY OF THE INVENTION The present invention is directed to a standard sample wafer and a method of manufacturing the same to solve the above-mentioned problems.

The standard sample wafer is used for calibration of sensitivity of a surface inspection apparatus, and has standard particles applied to the surface thereof. The surface of the standard sample wafer is charged to have a positive potential. Things.

Since the surface of the standard sample wafer is charged to have a positive potential, when standard particles having a negative potential are applied to the surface of the standard sample wafer, the standard particles are usually It adheres to the wafer surface without being drawn to the edge side of the wafer from the surface. Therefore, when the standard particles are applied so as to be uniformly distributed on the surface of the standard sample wafer, the standard particles are uniformly distributed and adhere to the wafer surface.

The method of manufacturing a standard sample wafer is a method of forming a standard sample wafer used for calibration of sensitivity of a surface inspection apparatus by applying a solution containing standard particles to the surface of a wafer. Before applying the solution containing, as a liquid having a reducing property on the surface of the wafer, for example, a step of applying an organic amine-based solution to change the potential of the surface of the wafer to positive, and a liquid having a reducing property from the surface of the wafer Removing step.

In the method for manufacturing a standard sample wafer,
Before applying a solution containing standard particles to the wafer surface, as a liquid having a reducing property on the negatively charged surface of the wafer,
For example, since the organic amine solution is applied to change the potential of the wafer surface to positive, when standard particles having a negative potential are applied to the surface of the standard sample wafer, the standard particles are repelled from the wafer surface. And adheres to the wafer surface. Therefore, when the standard particles are applied to the surface of the standard sample wafer, the standard particles are uniformly distributed and adhered to the wafer surface.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a standard sample wafer according to the present invention will be described with reference to the schematic sectional view of FIG.

As shown in FIG. 1, a standard sample wafer 1
Reference numeral 1 denotes a wafer to which standard particles are applied for use in sensitivity calibration of a surface inspection device (not shown), and a bare (Ba)
re) The wafer 12 and the PT formed on its surface
The P-TEOS film 13 is charged with a surface having a positive potential. As the bare wafer 12, for example, a silicon wafer can be used. The bare wafer 12
Surface is treated with plasma, for example, plasma CVD.
Processing, plasma etching processing, and the like. In this embodiment, P CVD is performed by plasma CVD processing.
-The TEOS film 13 is formed to a thickness of 300 nm. The standard sample wafer 11 has a P-TEOS film 1
Thus, the standard particles 31 are attached to the surface of the sample No. 3 so as to be uniformly distributed.

Since the surface of the standard sample wafer 11 is charged to have a positive potential, when the standard particles 31 having a normal negative potential are applied to the surface of the standard sample wafer 11, The particles 31 adhere without being drawn from the surface of the standard sample wafer 11 to the edge thereof. Therefore, the standard sample wafer 1
When the standard particles 31 are applied so as to be uniformly distributed on the surface of the first sample wafer 1, the standard particles 31 are uniformly distributed and adhere to the surface of the standard sample wafer 11.

Next, an embodiment of the method for manufacturing a standard sample wafer according to the present invention will be described with reference to the manufacturing process diagram of FIG. 2, the same components as those described with reference to FIG. 1 are denoted by the same reference numerals.

As shown in FIG. 2A, a bare wafer (for example, a silicon wafer) 12 is subjected to pretreatment cleaning by RCA cleaning or the like, and its surface is cleaned.

Next, as shown in FIG. 2B, a so-called P-TEOS film 13 is formed on the surface of the bare wafer 12 by a plasma CVD method using tetraethoxysilane (TEOS) as a source gas. At this point, P-TE
The OS film 13 and the surface have a negative potential.

Next, as shown in FIG.
A surface treatment of applying an organic amine solution 21 as an example of a reducing liquid on the surface of the TEOS film 13;
-Change the surface potential of the TEOS film 13 to the positive side. It has been clarified by experiments of the inventor that the potential of the wafer surface is changed from negative to positive by applying the organic amine solution 21 in this manner. It has been found that a solution containing a large organic amine tends to change the polarity of the surface potential more easily. As the organic amine solution 21, for example, a solution containing one or more of aminoethoxyethanol, monoethanolamine, diethylhydroxylamine, and hydroxylamine is used. By applying the organic amine solution 21 to the surface of the P-TEOS film 13, the surface potential changes from negative to positive.
It is considered that excess silicon having unpaired electrons of oxygen vacancies is generated on the film surface to change the surface potential to the positive side.

The method of applying the organic amine solution 21 is as follows.
An ordinary solution coating method is used. Here, for example, the spraying method was used, but a dipping method, a paddle method, or another coating method may be used. The processing time is 10 minutes to 2 minutes.
The time was set to about 0 minutes (here, 15 minutes).

After that, a rinsing treatment for removing the organic amine solution 21 using, for example, isopropyl alcohol (IPA) as an alcohol neutralizing agent is performed, followed by washing with pure water and spin drying in a nitrogen atmosphere. For the rinsing treatment, N-methylpyrrolidone (NMP), methyl ethyl ketone (MEK) or the like can be used.
Alternatively, IPA after rinsing using NMP, MEK, etc.
May be performed.

Next, as shown in FIG. 2D, a solution containing standard particles (for example, polystyrene particles) having a predetermined particle size is sprayed on the surface of the P-TEOS film 13 by, for example, a spray method, and then dried. By fixing the standard particles 31 on the surface of the P-TEOS film 13, the standard sample wafer 11 is completed. The solution containing the standard particles was a solution obtained by mixing the standard particles with pure water.

In the method for manufacturing the standard sample wafer,
Before applying the solution containing the standard particles to the surface of the P-TEOS film 13, for example, an organic amine-based solution is applied to the negatively charged surface of the P-TEOS film 13 as a reducing solution. Since the polarity of the surface of the P-TEOS film 13 is changed to be positive, the standard particles 31 having a negative polarity are changed to the P-TEOS film 13.
When applied to the surface of the TEOS film 13, the standard particles 31 adhere to the surface of the P-TEOS film 13 without being repelled. Therefore, when the standard particles 31 are applied to the surface of the P-TEOS film 13, even if the standard particles 31 have a negative potential, the standard particles are uniformly distributed on the surface of the P-TEOS film 13. Standard particles 3
This makes it possible to form the standard sample wafer 11 on which 1 is uniformly applied.

[0022]

As described above, according to the standard sample wafer of the present invention, since the surface of the standard sample wafer is charged to have a positive potential, a negative potential is applied to the surface of the standard sample wafer. When the standard particles are uniformly applied, the standard particles can be uniformly distributed and adhered to the wafer surface in a single application operation. Therefore, the sensitivity calibration of the surface inspection apparatus can be accurately performed by using the standard sample wafer of the present invention in which the standard particles are adhered.

According to the standard sample wafer manufacturing method of the present invention, an organic amine-based solution, for example, an organic amine solution is applied to the negatively charged surface of the wafer to reduce the potential on the surface of the wafer. Can be changed to Therefore, when the standard particles having a negative potential are applied to the surface of the standard sample wafer, the standard particles can be uniformly distributed and adhered to the wafer surface by a single coating operation.
Therefore, the sensitivity calibration of the surface inspection device can be accurately performed by using the standard sample wafer manufactured by the manufacturing method of the present invention.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing an example of an embodiment relating to a standard sample wafer of the present invention.

FIG. 2 is a manufacturing process diagram showing an example of an embodiment of a method for manufacturing a standard sample wafer according to the present invention.

FIG. 3 is a schematic sectional view showing a problem of a conventional standard sample wafer.

[Explanation of symbols]

 11 ... Standard sample wafer

Claims (3)

[Claims] 1. A standard sample wafer to be used for sensitivity calibration of a surface inspection apparatus and coated with standard particles, wherein the surface of the standard sample wafer is charged to have a positive potential. Sample wafer. 2. A method of manufacturing a standard sample wafer, wherein a solution containing standard particles is applied to a surface of a wafer to form a standard sample wafer used for sensitivity calibration of a surface inspection apparatus, wherein the standard particles are coated on the surface of the wafer. Applying a solution having a reducing property to a surface charged to a negative potential of the wafer to change the potential of the surface of the wafer to positive before applying the solution containing the solution; Removing a liquid having a characteristic property. 3. The method for manufacturing a standard sample wafer according to claim 2, wherein an organic amine-based solution is used as the reducing liquid.