JP2000057985A - Device and method of inspecting pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the deterioration of quality of image due to the deflection noise while performing the positional correction of an area to be inspected by forming a pattern inspecting device of a main deflecting device for deflecting the electron beam at a high speed in an narrow range and an auxiliary deflecting device for performing the positional correction of the area to be inspected and for deflecting the electron beam at a low speed in a wide range. SOLUTION: Before inspecting a pattern, a sample 11 is scanned by an electron beam 9, and an inspecting device 8 detects an alignment mark on the basis of the secondary electron 12 generated by scanning. A positional correction control computer 20 computes a positional setting error on the basis of the secondary electron 12 and the coordinate value obtained by a laser interferometer 18. After starting the inspection, the position correcting computer 20 controls a stage 10 on the basis of a coordinate of an area point of the inspection obtained by the laser interferometer 18 and a value of the displaced variable of the sample. The position correcting computer 20 also sends the signal to an auxiliary deflection control circuit 25 and a converging device control circuit 22 on the basis of the coordinate of a starting point of the inspection area sent from the laser interferometer 18 and a value of the angle of rotation of the sample so as to control an auxiliary deflecting device 24 and a converging device 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of irradiating a sample with a converged charged particle beam, detecting a signal obtained from the sample in correspondence with a beam irradiation position, and imaging the signal to form a pattern formed on the sample. The present invention relates to a pattern inspection technique for performing inspection, and in particular, while deflecting the convergent beam in one direction, continuously moving a sample stage in a direction crossing the scanning direction, and transmitting a signal obtained from the sample to a beam irradiation position. In a pattern inspection technology for inspecting a pattern by a scanning image obtained by detecting in correspondence with
The present invention relates to a pattern inspection technique that is effective for correcting positional deviation of a region to be inspected due to continuous movement of a stage and performing inspection with high accuracy.

[0002]

2. Description of the Related Art Generally, inspection of a pattern formed on the surface of a sample is performed by converging a particle beam, a light beam and the like capable of detecting the pattern onto the sample and irradiating the sample with the beam. This is done by detecting the signal.
The most typical example is a scanning electron microscope (hereinafter referred to as S
There is an SEM pattern inspection using a scanning image of secondary electrons (hereinafter, referred to as SEM image) obtained by EM.

[0003] Since an SEM image can image the surface shape of a sample with high resolution, attempts to use it for inspecting a circuit pattern on a semiconductor wafer have recently been active. In manufacturing a semiconductor integrated circuit device, a circuit pattern is formed on a semiconductor wafer by a deposition process of a conductive material or a poorly conductive material, a lithography process, an etching process, or the like. Since the quality of a circuit pattern formed on a semiconductor wafer has a great effect on productivity such as the manufacturing yield of a semiconductor integrated circuit device, the circuit pattern on such a semiconductor wafer is often used in the manufacturing process of a semiconductor integrated circuit device. Inspection is important.

[0004] Today, with the high integration of semiconductor integrated circuit devices, circuit patterns formed on semiconductor wafers are rapidly becoming finer. For this reason, attention has been paid to a method of using an SEM having higher resolution than a conventionally used optical inspection device as a circuit pattern inspection unit.

As a technique related to this, for example, Japanese Patent Laid-Open Publication No. Hei 5-258703 discloses an X-ray mask or a pattern formed on a conductive substrate equivalent thereto using an SEM.
Inspection method and system using the same are disclosed.

Japanese Patent Application Laid-Open No. Sho 59-160948 discloses that an electron beam is deflected in one direction and a stage on which a semiconductor wafer is placed is continuously moved in a direction perpendicular to the direction.
Means for generating an EM image and inspecting the circuit pattern at high speed using the EM image is disclosed.

Further, Japanese Patent Application Laid-Open No. 63-218803 discloses that the time for irradiating a semiconductor wafer with an electron beam at the time of acquiring an image is precisely controlled, and the influence of charge-up and gradation drift of the semiconductor wafer on image quality is given. SE used for inspection
Means for improving the reliability and sensitivity of the M image are disclosed.

[0008]

In today's semiconductor integrated circuit device manufacturing technology field, the size of semiconductor wafers has been increasing in step with the miniaturization of circuit patterns described above. Therefore, inspection of a circuit pattern requires inspection of a wider area with higher resolution. For this purpose, it is necessary to speed up the inspection.

In pattern inspection using both electron beam scanning and continuous movement of the stage, it is necessary to correct the positional deviation of the region to be inspected due to a rotation angle (azimuth) error when the wafer is placed on the stage. In this correction, the rotational angle error of the wafer is obtained from the two alignment marks on the wafer, and control for correcting the rotational angle error is performed on the deflection device, thereby correcting the position of the inspection area.

When a pattern inspection using both electron beam scanning and continuous movement of the stage is performed by a one-stage electron beam scanning device, both the deflection of the electron beam and the position correction accompanying the stage movement are performed by the one-stage deflection device. Have to do it. However, in order to perform position correction with a single-stage deflecting device, the deflection sensitivity of the deflecting device (deflection sensitivity is defined as the applied voltage applied to the deflecting device) from the viewpoint that the deflection area of the electron beam must be wide. Or, it is a value indicating how much the electron beam is deflected with respect to the current).

With the improvement of the deflection sensitivity,
The problem of image quality degradation (deflection noise) due to the electrical noise of the deflection device itself becomes serious. Therefore, there is a limit to the range in which the position of the inspection area can be corrected with a single-stage deflection device, and in the case of pattern inspection of a large wafer, there is a problem that the position cannot be corrected completely.

An object of the present invention is to provide a continuous stage moving system.
In the SEM pattern inspection, it is an object to realize a pattern inspection in which image quality deterioration due to deflection noise does not occur while performing position correction of a region to be inspected due to continuous movement of a stage in a wide range.

[0013]

According to the present invention, in order to solve the above-mentioned problems, a pattern inspection is performed by a two-stage deflecting device. The two-stage deflecting device includes, for example, a main deflecting device for deflecting the electron beam at high speed in a narrow range and an auxiliary deflecting device for deflecting the electron beam at a low speed and wide range for the purpose of correcting the position of the inspection area. It consists of.

That is, according to one embodiment of the present invention, a charged particle generator, a stage on which a sample on which a pattern is formed can be set, and a first charged particle beam from the charged particle generator are provided. A converging device for converging on the sample, a main deflecting device for deflecting the first charged particle beam in one direction, an auxiliary deflecting device for deflecting the first charged particle beam, and a stage in the one direction within the stage plane. A stage driving device for moving in a direction intersecting with a detector, a detection device for detecting a second charged particle beam generated from the sample by irradiating the sample with the first charged particle beam,
An image generation device that generates an image corresponding to a region of the sample scanned by the first charged particle beam, based on a signal from the detection device, and calculates an installation deviation angle α ° of the sample with respect to a reference direction of the stage To offset the positional deviation between the scanning area by the main deflection device and the intended inspection area in the sample, which is caused by the sample installation angle α ° and increases or decreases as the stage moves. As a result, the first charged particle beam is deflected by the auxiliary deflection device in synchronization with the movement of the stage.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below using an example in which an electron beam generator is used as a charged particle generator.

FIG. 2 is a block diagram of a position correction control mechanism according to the present invention. In FIG. 2, the mirror 1 includes an electron beam generator 2, a blanking device 34, a fixed stop 35, an auxiliary deflection device 24, a main deflection device. It comprises a device 26, a convergence device 5 and a detection device 8.

The sample chamber 14 includes the sample 11 (including the alignment mark 23), the stage 10, the stage driving device 15, and the laser interferometer 18.

The position correction controller 19 comprises a position correction control computer 20, a blanking circuit 31, a main deflecting device control circuit 27, an auxiliary deflecting device control circuit 25, and a converging device control circuit 22.

Before starting the pattern inspection, the sample 1 is irradiated with the electron beam 9.
1, the detection device 8 detects the alignment mark 23 based on the generated secondary electrons 12. From the detected secondary electron signal 12 and the coordinate values obtained from the laser interferometer 18, the position correction control computer 20
1, the position setting error with respect to the stage 10, that is, the rotation angle α ° of the sample 11 with respect to the reference direction on the stage 10 and the amount of displacement of the sample 11 with respect to the reference point on the stage 10.
Calculate X and Y.

After the start of the inspection, the position correction control computer 20 uses the coordinates of the start point of the inspection area sent from the laser interferometer 18 and the values of the amounts of displacement X and Y of the sample so that the stage driving device 20 inspects the appropriate area. Send a signal to 15 and stage 1
Control 0.

Further, the position correction control computer 20 uses the coordinates of the starting point of the inspection area sent from the laser interferometer 18 and the value of the rotation angle α ° of the sample so that the inspection area can be properly inspected during the inspection. A signal is sent to the auxiliary deflection device control circuit 25 and the convergence device control circuit 22 to control the auxiliary deflection device 24 and the convergence device 5.

In the position correction control of the present invention, the main deflection device for deflecting the electron beam at a high speed has a low deflection sensitivity, and the auxiliary deflection device for causing the electron beam to follow the stage movement has a high deflection sensitivity. By using the deflecting devices each having a small value, the stage position correction control over a wide range can be performed with high accuracy while minimizing the influence of electric noise.

FIG. 1 is a diagram showing a device configuration according to an embodiment of the present invention.

In FIG. 1, a mirror body 1 comprises an electron generating device 2, a beam alignment device 33, a converging device comprising, for example, a magnetic lens system 3, a blanking device 34, a fixed stop 35, an auxiliary deflecting device comprising, for example, a magnetic field deflecting system. 24, for example, a main deflecting device 26 composed of an electrostatic deflecting system, for example, a converging device 5 composed of a magnetic lens system, an ExB deflecting device 6, and a reflecting plate 7.

Here, the electron generator 2 includes a Schottky field emission electron source 36, a suppressor electrode 37, an extraction electrode 38, a first anode electrode 39 and a second anode electrode 40.

The detector 28 includes a detector 8 including a semiconductor detector and an AD converter 29 including an AD conversion board at 100 MHz.
It is composed of It is assumed that the detection device section 28 can apply a high voltage to attract secondary electrons to the detection device.

The sample chamber 14 has an alignment mark 23
And a stage driving device 15 and a laser interferometer 18.

The position correction control section 19 comprises a position correction control computer 20, a blanking circuit 31, an auxiliary deflection device control circuit 25, a main deflection device control circuit 27, and a converging device control circuit 22. The electron beam 9 generated by the electron generating device 2 forms a crossover (formed in the vicinity of the fixed stop 35 in FIG. 1) once by the converging device 3 and is then deflected at high speed by the main deflecting device 26 and converged. The sample 5 is focused by the device 5.

Here, the beam alignment device 33 is used for adjusting the optical axis of the electron beam 9. The blanking device 34 is used to deflect the electron beam 9 and block the electron beam 9 with the fixed stop 35 when the sample 11 is not desired to be irradiated with the electron beam 9. The blanking device 34 performs high-speed blanking by the position correction control computer 20 and the blanking circuit 31 in order to realize high-speed electron beam scanning in only one direction by the main deflection device 26 during pattern inspection. It can be controlled as follows.

The auxiliary deflecting device 24 is used for position correction control in conjunction with the movement of the stage 10 as described above.
The sample 11 is fixed on the stage 10. further,
The electron beam generator 2 is connected to the sample 11 by a power supply 46.
Deceleration voltage for decelerating the primary electron beam 9 from
(Referred to as retarding voltage). The sample 11 moves two-dimensionally with respect to the mirror body 1 as the stage 10 moves within the plane of the stage 10 by the stage driving device 15. The movement of the stage 10
It is controlled by the stage driving device 15.

Here, of the moving directions of the stage 10, the moving direction perpendicular to the scanning direction of the primary electron beam 9 is referred to as “continuous moving direction”, and the moving direction parallel to the scanning direction of the primary electron beam 9 is referred to as “feeding direction”. ". Secondary electrons 12 generated from the sample 11 are accelerated by the retarding electric field, are separated from the primary electron beam 9 by the ExB deflecting device 6 in which a magnetic field is superimposed on the electric field, and collide with the reflecting plate 7. Secondary electrons 12 generated from the reflection plate 7 are detected by the detection device 8 to which a high voltage is applied.

An analog signal based on the secondary electrons 12 is converted into a digital signal by an AD converter 29, and then sent to a grounded image generating device 13 via an optical fiber cable 30. The acquisition of the SEM image is performed by using both the deflection of the electron beam 9 and the continuous movement of the stage 10.

For the position correction control, before the start of the pattern inspection, the electron beam 9 scans an alignment mark (not shown) on the sample 11 and the generated secondary electrons 12 are detected by the detector 8.
Is detected by From the detected secondary electron signal and the coordinate value obtained from the laser interferometer 18, the position correction control computer 20 calculates the rotation angle α ° of the sample 11 and the deviation amounts X and Y of the sample 11.
Is calculated.

After the start of the inspection, the position correction control computer 20 uses the coordinates of the starting point of the inspection area sent from the laser interferometer 18 and the values of the deviation amounts X and Y of the sample, and the stage correction control computer 20 to inspect the desired area. Send a signal to 15 and stage 1
Control 0.

Further, the position correction control computer 20 uses the coordinates of the start point of the inspection area sent from the laser interferometer 18 and the value of the rotation angle α ° of the sample so that the inspection area can be properly inspected during the inspection. A signal is sent to the auxiliary deflection device control circuit 25 and the convergence device control circuit 22 to control the auxiliary deflection device 24 and the convergence device 5.

The movement of the stage 10 in the position correction control will be described with reference to FIG. The stage 10 is moved at a constant speed (for example, 5 to 8 mm / sec) from the start point 42 to the end point in the continuous movement direction defined above (that is, the direction perpendicular to the scanning trajectory 48 of the electron beam 9 shown by the arrow in FIG. 3). After moving to 43, it returns to the starting point 42 in the continuous moving direction again, and at the same time, is fed by a fixed amount (referred to as a feeding amount S) in the above defined feeding direction (ie, a direction perpendicular to the continuous moving direction).

Here, the feed amount S of the stage is set to
When the width of the stripe pattern 50 drawn by scanning the electron beam 9 is D, control is performed so that S = D / cosα.

On the other hand, the primary electron beam 9 scans simultaneously with the continuous movement of the stage 10 while simultaneously moving the starting point of scanning by an amount corresponding to the rotation angle α of the wafer with the same deflection width as the feed amount S of the stage from beginning to end. I do.

The present invention comprises a charged particle generator 2, a stage 10 on which a pattern-formed sample 11 can be placed,
The first charged particle beam 9 from the charged particle generator 2
A first deflecting device 26 for deflecting the first charged particle beam 9 in one direction; a first deflecting device 26 for deflecting the first charged particle beam 9 in one direction;
An auxiliary deflecting device 24 for deflecting the sample, a stage driving device 15 for moving the stage 10 in a direction intersecting the one direction in the stage plane, and a first charged particle beam 9 to the sample 11.
Charged particle beam 1 generated from sample 11 by irradiation of
A detection device 8 for detecting an image of the sample 11, an image generation device 13 for generating an image corresponding to an area of the sample 11 scanned by the first charged particle beam 9 based on a signal from the detection device 8, A device 20 for calculating an installation deviation angle α ° of the sample 10 with respect to a reference direction, wherein the main deflection, which is generated due to the installation deviation angle α ° of the sample 11, increases or decreases as the stage 11 moves, The first charged particle beam 9 is deflected by the auxiliary deflecting device 24 in synchronization with the movement of the stage 10 so as to cancel the positional shift between the scanning region by the device 26 and the intended inspection region on the sample 11.

In the embodiment of the present invention, a quadrupole magnetic field deflector is used as the auxiliary deflector 24.
Since the auxiliary deflecting device 24 deflects the electron beam in a wide range, the image quality may be degraded due to the deflection aberration. As the auxiliary deflecting device 24, a multipolar magnetic field deflecting device and a multipolar electrostatic deflecting device may be used. Of course, their use does not impair the effects of the present invention.

(Embodiment 1) A specific embodiment of the present invention using the apparatus of FIG. 1 will be described with reference to the drawings. FIG.
4 is a diagram illustrating an outline of pattern inspection by the position correction control according to the present invention. In FIG. 4, the substrate 11 is the stage 1
Assuming that the pattern 41 to be inspected on the substrate 11 is rotated by α ° with respect to the feed direction of 0,
It will rotate and be fixed.

When α is small, the main deflection device 26 (see FIG. 1)
Deflects the electron beam 9 at a high speed by a constant width (D / cos α) in the same direction as the feed direction of the stage 10.

On the other hand, the auxiliary deflecting device 24
Is fixed by rotating by α ° with respect to the feed direction of the stage 10, and corrects the positional deviation between the scanning area and the intended inspection area by the main deflection device 26, which increases with the continuous movement of the stage 10. Therefore, as shown in FIG. 4, the electron beam 9 is deflected so that a scanning area 50 in which the trajectory 48 of the electron beam 9 is corrected is formed. FIG. 6 shows the relationship between the deflection signals in the auxiliary deflection device 24 and the main deflection device 26 at this time.

As shown in FIG. 6A, when the number of samplings per line is 1000 at a sampling frequency of 100 MHz, the period of the deflection signal waveform of the electron beam 9 is 10 μsec.

On the other hand, as shown in FIG. 6B, the auxiliary deflecting device 24 adds a deflection voltage corresponding to the rotation angle of the pattern in steps of 10 μsec every time the main deflecting device 26 deflects one line. I will do it. By performing this process at the time of pattern inspection, position correction control is performed.

(Embodiment 2) Another specific embodiment of the present invention using the apparatus of FIG. 1 will be described with reference to the drawings. In the case of the first embodiment, the main deflecting device 26 deflects the electron beam 9 in the same direction as the moving direction of the stage 10. However, the stage 1 of the pattern 41 to be inspected on the substrate 11
When the rotation angle α ° of the pattern with respect to the feed direction of 0 is large, the deflection width D / cos α of the main deflection device 26 becomes large, which is disadvantageous for speeding up the pattern inspection.

In this case, this problem can be solved by providing the main deflecting device 26 itself with a function of correcting a wafer rotation error. FIG. 5 explains the outline of the pattern inspection by the position correction control of the present invention when the rotation error correction function is added to the main deflection device 26 itself.

In FIG. 5, the pattern 41 to be inspected on the substrate 11 is fixed by being rotated by α ° with respect to the stage moving direction.

When α is large, the main deflecting device 26 deflects the electron beam 9 at a high speed with a constant scanning width D in a direction rotated by α ° with respect to the stage feed direction.

On the other hand, as in the first embodiment, the auxiliary deflecting device 24 determines that the pattern 41
As shown in FIG. 5, in order to correct the positional deviation between the scanning region by the main deflecting device 26 and the intended region to be inspected, which increases with the continuous movement of the stage 10 because the stage 10 is fixed by rotation. Scanning area 50 with modified trajectory 48 of line 9
The electron beam 9 is deflected so that is formed.

In each of the above embodiments, an electron beam generator is used as a charged particle generator, but the present invention is not limited to this, and an ion beam generator can be used. Needless to say.

[0052]

As described above, according to the present invention, in the pattern inspection using both the deflection of the charged particle beam and the continuous movement of the stage, the position correction control over a wide range can minimize the influence of electric noise and reduce the accuracy. It is possible to do well.

[0053]

[Brief description of the drawings]

FIG. 1 is a diagram for explaining a configuration of an embodiment of the present invention.

FIG. 2 is a block diagram for explaining an outline of a position correction control mechanism according to the present invention.

FIG. 3 is a diagram for explaining stage movement in position correction control.

FIG. 4 is a diagram for explaining an outline of pattern inspection by position correction control according to the present invention.

FIG. 5 is a diagram for explaining an outline of pattern inspection by position correction control according to the present invention.

FIG. 6 is a diagram for explaining a relationship between deflection signal waveforms of a main deflection device and an auxiliary deflection device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Mirror, 2 ... Electron generation device, 3 ... Convergence device, 4 ... Deflection device, 5 ... Convergence device, 6 ... ExB deflection device, 7 ... Reflection plate,
Reference numeral 8: detection device, 9: electron beam, 10: stage, 11: sample, 12: secondary electron, 13: image generation device, 14: sample chamber, 15: stage drive device, 16: starting point of pattern inspection, 17 ... End point of pattern inspection, 18 ... Laser interferometer, 19 ... Position correction control unit, 20 ... Position correction control computer, 21 ... Deflecting device control circuit, 22 ... Converging device control circuit, 23 ... Alignment mark, 24 ... Auxiliary deflecting device , 25 ... Auxiliary deflection device control circuit, 26 ... Main deflection device,
27: main deflection device control circuit, 28: detection device section, 19:
AD converter, 30: optical fiber cable, 31: blanking circuit, 32: movable diaphragm, 33: beam alignment device, 34: blanking device, 35: fixed diaphragm, 3
6: Schottky field emission electron source, 37: suppressor electrode, 38: extraction electrode, 39: first anode electrode,
40 ... second anode electrode, 41 ... pattern, 42 ... start point of continuous stage movement, 43 ... end point of continuous stage movement.

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Hisaya Murakoshi 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo Inside the Hitachi, Ltd. Central Research Laboratory (72) Inventor Mari Nozoe 1-280, Higashi-Koikekubo, Kokubunji, Tokyo Inside Hitachi Central Research Laboratory (72) Inventor ▲ Taka ▼ Fuji Atsuko 1-280 Higashi Koikekubo, Kokubunji, Tokyo Metropolitan Government Inside Hitachi Ltd. Central Research Laboratories (72) Kaoru Umemura 1-280 Higashi Koikebo, Kokubunji City, Tokyo (72) Inventor Yusuke Yajima 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo Tokyo, Japan Inside (72) Inventor Masaki Hasegawa 1-280, Higashi-Koikekubo, Kokubunji, Tokyo, Japan (72) Inventor Yasutoshi Usami Hitachi, Ibaraki Pref. 882 Ma, China City, Hitachi, Ltd.Measurement Instruments Division (72) Inventor Yuko Iwabuchi 882, Hitachi, Ichigo, Ibaraki Pref., Hitachi, Ltd.Measurement Instruments Division F-term (reference) 2G001 AA03 BA07 CA03 DA01 FA06 FA08 GA01 GA06 GA09 GA10 GA13 HA07 HA13 JA02 JA03 JA09 JA13 JA20 KA03 LA11 MA05 PA11 PA12 2G032 AD08 AF08 AL00 4M106 AA01 BA02 BA03 CA39 DB05 DJ03 DJ19 5C033 FF03 FF06

Claims (13)

[Claims] A charged particle generator; a stage on which a sample on which a pattern is formed can be placed; a converging device for converging a first charged particle beam from the charged particle generator on the sample; A main deflecting device for deflecting one charged particle beam in one direction; an auxiliary deflecting device for deflecting the first charged particle beam; and a stage for moving the stage in a direction crossing the one direction in the stage plane. A driving device; a detection device that detects a second charged particle generated from the sample by irradiating the sample with the first charged particle beam; and a first charged particle based on a signal from the detection device. An image generating apparatus that generates an image corresponding to the area of the sample scanned by a line; and an apparatus that calculates an angle α ° of setting the sample with respect to a reference direction of the stage. α ° Synchronously with the movement of the stage so as to offset the positional deviation between the scan area by the main deflection device and the intended inspection area on the sample, which is caused by the increase or decrease with the movement of the stage. Wherein the first charged particle beam is deflected by the auxiliary deflection device. 2. The pattern inspection apparatus according to claim 1, wherein the one direction and a reference direction of the stage are orthogonal to a moving direction of the stage. 3. The stage according to claim 1, wherein the reference direction of the stage is orthogonal to the moving direction of the stage, and the one direction intersects the moving direction of the stage at an angle of (90 ° -α °). 2. The pattern inspection apparatus according to 1. 4. The pattern inspection apparatus according to claim 1, wherein said auxiliary deflecting device performs a low-speed deflection and a wide range of deflection, and said main deflection device performs a high-speed deflection and a narrow range of deflection. A pattern inspection apparatus, characterized in that: 5. The pattern inspection apparatus according to claim 1, wherein said first charged particles are electron beams. 6. The pattern inspection apparatus according to claim 5, wherein said second charged particles are at least one of secondary electrons and reflected electrons. 7. A pattern inspection apparatus according to claim 5, wherein said charged particle generator includes a field emission type electron source. 8. A pattern inspection apparatus according to claim 5, wherein said main deflection device and said auxiliary deflection device include at least one of an electrostatic deflector and a magnetic deflector. 9. The pattern inspection apparatus according to claim 6, wherein said detection device includes a semiconductor detector. 10. A charged particle generating means, a stage on which a sample on which a pattern is formed can be set, a converging means for converging a first charged particle beam from the charged particle generating means on the sample, Main deflecting means for deflecting one charged particle beam in one direction; auxiliary deflecting means for deflecting the first charged particle beam; and a stage for moving the stage in a direction crossing the one direction in the stage plane. Driving means; detecting means for detecting second charged particles generated from the sample by irradiating the sample with the first charged particle beam; and detecting the first charged particles based on a signal from the detecting device. Image generation means for generating an image corresponding to the area of the sample scanned by a line, and means for calculating the setting shift angle α ° of the sample with respect to a reference direction of the stage, the setting shift angle of the sample α Synchronous with the movement of the stage so as to offset the positional displacement between the scanning area by the main deflection unit and the intended inspection area on the sample, which is increased or decreased with the movement of the stage, which is caused by the movement of the stage. And deflecting the first charged particle beam by the auxiliary deflecting means. 11. The pattern inspection method according to claim 10, wherein the one direction and the reference direction of the stage are orthogonal to the moving direction of the stage. 12. The apparatus according to claim 10, wherein the reference direction of the stage is orthogonal to the moving direction of the stage, and the one direction intersects the moving direction of the stage at an angle of (90 ° -α °). The pattern inspection method described. 13. The pattern inspection apparatus according to claim 1, wherein said stage driving device further includes means for moving said stage in said one direction.