JPH06326009A - Displacement-error measuring method using charged beam, charged-beam plotting device and semiconductor device using displacement-error measuring mark - Google Patents

Abstract

PURPOSE:To improve the plotting accuracy by emitting a charged beam on a mark, continuously moving at least one of the charged beam and a stage, detecting the reflected beam, and measuring the relative vibration in the continuous movement based on the reflected beam signal. CONSTITUTION:The cross-sectional shape of the electron beam 9, which is emitted from an electron gun 2, is shaped. The beam is converged with an electronic lens. Then, the shape of the cross section is aligned with an orifice 4 again. The focal point of the electron beam 9 is focused on the resist film surface of a substrate 7 on a continuously moving X-Y stage 8 with an electron lens 6. A mark is used for detecting the relative vibration between the electron beam in the moving direction and the vertical direction of the stage 8 and the stage 8 itself. The line and space mark having the same width as the rectangular electron beam 9 is used. Thus, the relative vibration of the beam and the stage 8 when the stage is moved in parallel with the line and in the vertical direction can be measured.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged beam drawing technique for drawing a fine pattern of an LSI or the like on a sample, and particularly for measuring vibrations (relative displacement error) between the charged beam and the sample as they move. The present invention relates to a displacement error measuring method using a charged beam, a charged beam drawing device having a displacement error measuring function, and a semiconductor device having a displacement error measuring mark for correcting a relative displacement error and drawing a desired pattern.

[0002]

2. Description of the Related Art In recent years, semiconductor devices are becoming more and more miniaturized and integrated on a larger scale. Therefore, the patterns formed on a photoresist film are required to be further miniaturized and highly accurate. There is. In particular, when a fine and highly accurate pattern is required in a VLSI or the like, the conventional method of irradiating light to expose a photoresist film has a limitation due to the wavelength of light, etc., and a desired pattern can be obtained. Absent. One way to overcome this is to use an electron beam instead of light.

In an electron beam drawing apparatus, a method is generally used in which a stage on which a sample is placed is continuously moved in one direction and an electron beam is deflected to draw a desired pattern on the sample. In the XY stage of the electron beam writing apparatus adopting such a stage continuous movement writing method, since the vibration of the stage has a great influence on the writing accuracy, the position of the XY stage is always measured by the laser interferometer. After the measurement, when the stage reaches a desired position, the electron beam sequentially performs shot exposure on the sample for patterning.

Further, an electron beam drawing apparatus is being developed to further increase the throughput by continuously moving not only the stage but also the forming mask for forming the electron beam. This is an electron beam drawing apparatus that reduces and exposes a mask pattern onto a sample surface by using an electron beam, and an aperture that shapes the electron beam generated from an electron gun into a desired shape and a charge formed by this aperture. Means for irradiating the mask with the beam, means for reducing the area irradiated by the beam on the mask and projecting it onto the sample surface, a mask stage for holding the mask and moving in a direction orthogonal to the beam direction axis, and holding the sample A sample stage that moves in a direction orthogonal to the beam axis direction in synchronism with the mask stage is provided, and the mask pattern is sequentially transferred onto the sample surface.

However, this type of device has the following problems. That is, if there is (electrical or mechanical) relative vibration that cannot be measured by the laser interferometer between the electron beam and the stage on which the sample is placed, it cannot be corrected and the drawing accuracy deteriorates and normal It becomes impossible to draw properly.

Such unnecessary relative vibration can be measured by irradiating the edge of a minute mark made of, for example, gold on the stage with an electron beam and detecting backscattered electrons generated at that time with a detector. Furthermore, the signal is frequency analyzed,
If the frequency of the vibration peak was read, the problem could be extracted from the frequency to some extent and countermeasures could be taken. However, this is a countermeasure only for the relative vibration that occurs when the stage is stationary, and no countermeasure can be taken for the relative vibration that occurs when the stage continuously moves. The reason for this is that the relative vibration cannot be measured when the stage is moved.

[0007]

As described above, in the conventional charged beam drawing apparatus, the relative vibration due to the continuous movement of the charged beam or the stage cannot be measured, which is a factor that deteriorates the drawing accuracy. It was

The present invention has been made in consideration of the above circumstances. An object of the present invention is to make it possible to measure relative vibration caused by continuous movement of a charged beam or a stage, and to improve drawing accuracy. An object is to provide a charged beam drawing apparatus that can be improved.

Another object of the present invention is to provide a displacement error measuring method using a charged beam which can measure relative vibration between the charged beam and the sample and can contribute to countermeasures against these vibrations. is there.

Another object of the present invention is to provide a semiconductor device having a displacement error measuring mark which can be drawn by correcting the relative displacement error between the charged beam and the sample.

[0011]

SUMMARY OF THE INVENTION The essence of the present invention is to enable the measurement of the relative vibration (electrical or mechanical) generated between a continuously moving stage and an electron beam. The pattern or control power supply was devised.

That is, the present invention (claim 1) is a charged beam drawing apparatus for drawing a desired pattern on a sample by continuously moving a stage on which a sample is placed and deflecting the charged beam on the sample. Means for setting on the sample or stage marks of a line & space pattern in which a plurality of heavy metal marks having the same width as one side are arranged at the same intervals as the width, and for irradiating the marks with a charged beam and at least the charged beam and the stage One of them is continuously moved in a predetermined direction, and means for detecting the reflected beam from the mark at this time, and means for measuring the relative vibration of the charged beam and the stage during the continuous movement of the stage based on the detected reflected beam signal are provided. It is characterized by being done. Further, the present invention (Claim 2) is directed to each of a plurality of control circuits associated with the charged beam optical system in a charged beam drawing apparatus that deflects a charged beam on a sample to draw a desired pattern on the sample. The means for supplying power at a frequency (variable frequency) different from the rest of the control circuit, and means for irradiating the mark installed on the stage with the charged beam and detecting the reflected beam were detected. The reflected beam signal is frequency-analyzed, and a means for judging whether or not the control circuit is normally operating is determined by whether or not a variable frequency is found in the peak frequency.

Further, the present invention (claim 3) is a displacement error measuring method using a charged beam for measuring a relative displacement error between a charged beam and a sample, by using a molding mask on a stage on which the sample or the sample is mounted. A shape that has a graphic correlation with the formed charged beam shape is repeatedly arranged as a displacement error measurement mark, the mark is irradiated with the charged beam, and at least one of the charged beam and the sample is continuously moved. It is characterized in that a reflected beam or a secondary beam from the mark caused by the overlapping of the charged beam and the mark is detected, and a relative displacement error between the charged beam and the mark is obtained based on the detected signal.

According to the present invention (claim 4), in a charged beam drawing apparatus, a shape which is graphically correlated with a charged beam shape formed by a molding mask is provided on a sample or a stage on which the sample is placed. Means for repeatedly arranging as marks for displacement error measurement, and irradiating the mark with a charged beam, and continuously moving at least one of the charged beam and the sample, and at this time, a reflected beam from the mark generated by the overlapping of the charged beam and the mark Means for detecting the secondary beam, means for measuring the relative displacement error between the charged beam and the mark based on the detected signal, and the measured relative displacement error is fed back to the deflection system for the charged beam to perform correction control. And a means.

The present invention (claim 5) provides a semiconductor device in which a desired pattern is drawn by a charged beam,
On the surface to be drawn, a shape formed by a molding mask and having a graphic correlation with the shape of the charged beam is repeatedly arranged as a displacement error measurement mark, and at least one of the charged beam and the sample is continuously formed using this mark. A relative displacement error between the two while moving is measured, the measured relative displacement error is fed back to the deflection system of the charged beam to be correction-controlled, and a desired pattern is drawn in the correction-controlled state. It is characterized by

Here, the following are preferred embodiments of the present invention.

(1) The mark is formed by arranging a plurality of line marks having the same width as one side of the shaped beam at the same intervals. When using this mark to measure relative displacement in the direction orthogonal to the moving direction of the sample stage, use line marks aligned parallel to the moving direction of the sample stage. When measuring the relative displacement in the same direction as the moving direction of the sample stage, use line marks arranged so as to be orthogonal to the moving direction of the sample stage.

(2) The mark shall be composed of a heavy metal substance.

(3) The mark is formed of a difference in geometrical shape, that is, an uneven shape such as a step.

(4) The mark should be made of a substance having an electron reflectance or a secondary electron emission coefficient different from that of the substance around the mark.

(5) The mark should be arranged around the beam scanning deflection area on the sample surface. (6) The mark must be placed at an arbitrary position of the beam scanning deflection area on the sample surface, for example, outside the pattern area within the circuit pattern.

(7) The signal generated by the overlapping of the mark and the shaped beam should be detected by the detector at least for the overlapping time of both in synchronization with the irradiation of the beam on the mark.

(8) The detected relative displacement signal is fed back to the main deflector or the sub-deflector of the charged beam drawing apparatus to correct the beam position.

(9) The detected relative displacement signal is fed back to the drive circuit of the beam shaping mask or the sample stage to correct the beam position.

(10) The relative displacement between the beam and the mark is measured while the beam shaping mask and the sample are synchronously moving, and the relative displacement amount is returned to at least one of the main deflector and the sub deflector. The beam position is corrected and controlled.

(11) A relative displacement error between the beam shaped by the shaping mask and the moving sample is measured, and the deviation amount is fed back to at least one of the main deflector and the sub-deflector to correct the beam position. Be controlled.

(12) The relative displacement error between the round beam shaped by the aperture mask and raster-scanned and the sample being continuously moved is measured, and the deviation amount is fed back to at least one of the main deflector and the sub-deflector. The beam position is corrected and controlled.

(13) Use a part of the circuit pattern as the mark.

[0029]

According to the present invention (claims 1, 3 to 5), the relative displacement error between the charged beam formed by the mask and the sample during exposure, which cannot be measured by a measuring instrument such as a laser interferometer of the charged beam drawing apparatus. Can be measured in real time by using a displacement error measuring mark in which a shape having a graphic correlation with the charged beam shape is repeatedly arranged. as a result,
Unnecessary relative vibration components caused by continuous movement of the charged beam or the stage are clarified, and problematic points can be extracted and countermeasures can be taken, so that highly accurate drawing is possible.

Further, according to the present invention (claim 2), it is possible to easily measure the electrical relative vibration between the electron beam and the stage which is generated at the time of drawing by the charged beam drawing apparatus. As a result, unnecessary relative vibration components caused by the continuous movement of the charged beam or the stage become clear,
Since it is possible to extract problem areas and take countermeasures, highly accurate drawing is possible.

[0031]

The details of the present invention will be described below with reference to the illustrated embodiments.

(Embodiment 1) FIG. 1 is a schematic configuration diagram showing an electron beam drawing apparatus according to a first embodiment of the present invention. In the figure, 1 is a vacuum chamber, 2 is an electron gun, 3 and 4 are apertures,
Reference numerals 5 and 6 are electron lenses, 7 is a sample substrate, 8 is an XY stage, 9 is an electron beam, and 10 to 14 are control power supplies. In the vacuum chamber 1, the electron beam 9 emitted from the electron gun 2 is adjusted by the aperture 3 to have a sectional shape, and then appropriately converged by the electron lens 5. Thereafter, the electron beam 9 whose cross-sectional shape is adjusted again by the diaphragm 4 is focused by the electron lens 6 on the resist film surface on the surface of the substrate 7 on the XY stage 8 which is continuously moving.

Although not shown in the figure, the position of the XY stage 8 is always measured by a laser interferometer. Then, while the stage 8 is continuously moved, when the stage 8 reaches a desired position, the electron beam 9 sequentially performs shot exposure on the substrate 7 to perform patterning.

The structure of the mark used in this embodiment is shown in FIG. The mark shown in FIG. 2A is for detecting relative vibration between the electron beam and the stage 8 in the direction perpendicular to the moving direction of the stage 8. This mark is, for example, 1
When measuring using a beam of μm, a line made of heavy metal such as tungsten and having a side of 1 μm in the direction perpendicular to the stage continuous movement direction and a long side in the stage continuous movement direction,
At least two of the rectangular beams are arranged at the same interval as the width of the rectangular beam.

The cross-sectional structure of the mark is as shown in FIG. 2C, and the W film 24 having a thickness of 0.2 μm and the A film having a thickness of 0.02 μm used as an etching mask are formed on the Si substrate 25.
1 or Al ₂ O ₃ film 23 is laminated. The mark shown in FIG. 2B is for detecting relative vibration between the electron beam and the stage in the same direction as the moving direction of the stage, and its structure is substantially different only in the line arrangement direction. It is similar to the mark shown in FIG.

Next, the manufacturing process of the mark will be described with reference to FIG. First, as shown in FIG. 3A, a W film 24, an Al ₂ O ₃ film 23, and a C film 22 are sequentially formed on a Si substrate 25. The W film 22 and the Al ₂ O ₃ film 23 are formed by
It is performed using a magnetron sputtering device (SDH-5215RD). The W film 24 is formed by DC sputtering with a power of 1 kW by introducing Ar gas at a pressure of 0.4 Pa that minimizes the stress. The Al ₂ O ₃ film 23 is A
RF at r gas pressure 0.4 Pa and power 1.5 kW
A film is formed by the sputtering method. The reason for forming the C film 22 is that the C film 22 is
This is to prevent the l ₂ O ₃ film 23 from melting.

Next, as shown in FIG. 3B, a resist 21 is applied and formed to form a desired resist pattern. For example, an EB drawing device is used for forming the resist pattern, and SAL601-ER is used for the resist 21.
(Shipley Company) was used. Next, as shown in FIG. 3C, the C film 22 is selectively etched by RIE using the resist 21 as a mask.

Next, after removing the resist 21 as shown in FIG. 3D, the Al ₂ O ₃ film 23 is selectively etched by RIE using the C film 22 as a mask as shown in FIG. 3E. The resist 21 is peeled off by CDE using a mixed gas of O ₂ + CF ₄ . At this time, set the O ₂ flow rate to 500
sccm, CF ₄ flow rate 20 sccm, power 600 W. A magnetron R is used for etching the Al ₂ O ₃ film 23.
Using an IE device (HiRRIE200x), pressurize the BCl ₃ gas to a pressure of 2
Pa. Use with a power of 150W.

Then, as shown in FIG. 3F, the C film 22 is formed.
After removing the Al ₂ O ₃ film 2 as shown in FIG.
Using the mask 3 as a mask, the W film 24 is selectively etched by RIE.
For etching the W film 24, a parallel plate type RIE device (DE
M-451) and SF ₆ + CHF ₃ mixed gas is used.
At this time, the CHF ₃ flow rate is 26 sccm, and the SF ₆ flow rate is 10 sc
cm, pressure 1.3 to 8 Pa, RF power 30 to 100
W.

As a result, as shown in FIG. 4 (a), a line & space displacement error measuring mark basically consisting of the W film 24 is formed. Although W is used as the mark material in the embodiments, other heavy metal materials such as Au may of course be used. Further, as shown in FIG. 4B, the mark may be formed with an oxide film such as SiO ₂ often used as a semiconductor material. That is, another material may be used as long as the material has a reflected electron amount different from that of the surroundings.

For the above reason, FIG. 4 (a)
FIG. 5A and FIG. 5B instead of the uneven mark shown in FIG.
It is obvious that the embedded mark as shown in FIG. When the concave-convex mark is used, the reflected electrons collide with the concave-convex, and the amount of the reflected electrons may be affected by factors other than the relative displacement error between the electron beam and the sample. However, when the embedded mark is used, since there is no unevenness, it is possible to more accurately measure the relative displacement error between the electron beam and the sample.

Next, the mounting location of the mark thus manufactured will be described. The mark is fixed on a part of the XY stage with its surface held at the same height as the sample to be drawn. The fixed position (position) may be anywhere within the stroke area of the stage. The location of the mark is not limited to the stage.

Of course, as shown in FIG. 6, the XY stage 31
The mark 34 may be formed on the sample 32 to be drawn, which is loaded into the substrate, or a wafer having a mark formed thereon may be used instead of the sample 32. Alternatively, the mark 34 may be formed on the sample holder that holds the sample to be drawn. Then, the mark 34 is irradiated with the electron beam 33 being fixed, and the backscattered electrons are detected by the backscattered electron detector while continuously moving the stage 31 in the arrangement direction of the marks.

Next, a method of measuring relative vibration of the stage using the marks shown in FIG. 2 will be described. As shown in FIG. 2, by using a line and space mark having the same width as the rectangular electron beam, the beam and the stage relative to each other when the stage is moved in parallel (1) and in the vertical direction (2) with this line. Vibration measurements can be made.

For example, a line and space pattern of 1 μm is fixed on the stage. The pattern is irradiated with an electron beam of 1 μm having the same diameter as the line width, and a backscattered electron signal generated when the stage is continuously moved at a certain constant speed is detected. An example of frequency analysis of the detection signal is shown in FIG.

FIG. 8 shows the result of performing the same measurement with the stage stopped. 45 when you move the stage
It can be seen that a peak is seen near Hz and that the stage is clearly moved to cause relative vibration between the stage and the beam, which does not occur when the stage is stopped.

In FIGS. 7 and 8, the difference between the continuous movement and the stop of the stage is not clear due to the influence of the vacuum pump (turbo molecular pump). Therefore, FIG. 9 shows the result of measuring the relative vibration between the beam and the sample while changing the stage speed. The stage moving speed in this case is 0, 2, 4,
6, 8 mm / s. A vibration peak of 130 Hz exists in all of the samples, which is because the measurement was performed while the vacuum pump was operating. It can be seen that the vibration component exists in the low frequency range of 50 Hz or less by moving the stage. Also, it can be confirmed that this vibration component moves as the stage speed increases. That is, from FIG. 9, it is possible to confirm the relative vibration between the beam and the sample, which exists only during the continuous movement of the stage.

When the above measurement was carried out and the signals of the acceleration pickup mounted on the stage during the movement of the stage were frequency-analyzed, peaks were found at the same frequency as shown in FIG. Further, as a result of frequency analysis of the signal of the laser interferometer in the same manner, it can be seen that similar peaks do not exist as shown in FIG.

From the above, in the vibration component shown here, the vibration of the stage cannot be measured by the laser interferometer, and therefore the feedback does not work for the beam, which appears as the relative vibration between the beam and the sample. It is thought that
Therefore, by investigating and clarifying the reason why these vibration components do not appear as the vibration of the laser interferometer, the drawing error can be reduced.

By performing the measurement as described above and eliminating the cause if there is a problem, it is possible to eliminate the relative vibration between the electron beam and the stage, and thus it is possible to perform highly accurate drawing.

Next, the displacement error measuring method in this embodiment will be described in more detail. First, in order to speed up the understanding of this embodiment, a conventional mark position detection method will be described with reference to FIG.
Will be explained using. As shown in the figure, a dot mark (Au mark) made of a heavy metal such as gold is set on the sample surface, and an electron beam (rectangular beam) shaped in a quadrangle, for example, is irradiated on the mark. Since the amount of backscattered electrons and secondary electrons generated varies depending on the overlap between the electron beam and the mark, the amount of signal detected by the detector changes.

Here, during the period from the time when the electron beam and the gold mark start to overlap until the time when the gold mark completely overlaps, there is a relationship between the amount of movement of the electron beam and the amount of detection signal depending on the shape of the mark and the electron beam. Holds. Therefore, the moving amount of the electron beam can be known from the detected signal amount. If the electron beam is superposed on the mark and stopped, ideally a detection signal that does not fluctuate can be obtained, but if relative vibration is mixed between the two, there will be a difference in the way the electron beam and the gold mark overlap,
Since the amount of reflected electrons changes, the relative vibration between the electron beam and the sample can be measured.

However, in the above method, it was impossible to continue the irradiation of the electron beam onto the gold mark while the sample was moving (while drawing), so that the measurement could not be performed.

Therefore, in the present embodiment, in order to solve the above-mentioned problem, as shown in FIG. 13, for example, the mark shape is determined so that the electron beam and the mark can always be kept overlapping even if the sample moves. is doing.

FIG. 13A shows a mark shape for measuring relative displacement vibration between the electron beam and the mark in a direction parallel to the stage continuous movement direction, and FIG. 13B shows a shape perpendicular to the stage continuous movement direction. The mark shapes for measuring relative displacement vibration between the electron beam and the mark are shown respectively.

With respect to the mark size, assuming that the shape of the electron beam is rectangular (horizontal: a, vertical: b), in the case of the mark shown in FIG. 13A, the line mark width and the line mark distance are b.
Then, the line marks are repeatedly arranged for the moving distance of the stage. The length of the line mark is enough to cover the fluctuation when the stage is moved, and the electron beam and line mark do not overlap within the stage movement range even if the stage movement axis is tilted with the line mark. .

In the case of the mark shown in FIG. 13B, the width of the line mark and the distance between the line marks are a, and the length of the line mark is a length corresponding to the moving distance of the stage. The number of line marks is the number of repetitions that covers the fluctuation when the stage is moved and that the electron beam and the mark do not overlap within the moving range of the stage even if the stage moving axis is inclined with the line mark.

Next, a method of detecting relative displacement vibration between the mark and the shaped beam using the above-mentioned mark will be described.
First, a case will be described in which the relative displacement vibration between the electron beam and the mark in the direction perpendicular to the stage continuous movement direction is measured using the mark shown in FIG. A beam is shaped by an electron beam optical lens barrel to produce a rectangular beam of horizontal: a and vertical: b, and the rectangular beam is applied to the mark. In this state, the beam deflection is fixed and the stage is moved in the longitudinal direction of the mark.

When the stage ideally moves (there is no mechanical vibration other than the moving direction, other structures are not excited by the reaction force associated with the movement), and the mark is completely parallel to the moving direction of the stage. Assuming that a constant amount of backscattered electrons that does not fluctuate according to the overlap between the electron beam and the mark can be obtained regardless of the moving position of the stage.

On the other hand, when the stage is mounted so that the moving direction of the stage and the mark are tilted, the beam crosses the mark as the stage moves, so the amount of backscattered electrons is determined by the speed of the stage and the tilt of the mark. It changes in a triangular waveform at the beam crossing cycle. Further, in reality, the stage vibrates slightly in all directions along with the movement, and the reaction force causes the electron beam optical lens barrel to vibrate mechanically, and the electron beam also vibrates due to electromagnetic disturbance. The position is changing. Therefore, when the mark and the moving direction of the stage are parallel to each other, the actually detected signal is a signal of a certain level with a minute vibration superimposed thereon as shown in FIG.

On the other hand, when the relative displacement vibration between the electron beam and the mark in the direction parallel to the stage continuous movement direction is measured using the mark shown in FIG. 13A, the reflected electron signal is the moving velocity of the stage and the mark. It changes like a triangular waveform at the mark crossing cycle of the beam determined by the pitch. Then, when the stage or the electron beam is vibrating, the signal actually detected is as in the case of the vibration measurement in the orthogonal direction,
As shown in FIG. 13A ', the triangular wave is superposed with the minute vibration.

Therefore, by using the above-described method, the relative vibration between the beam and the mark can be known in real time while the stage is moving. Furthermore, the detection signal described above,
For example, by performing frequency analysis and knowing the frequency component, it is possible to search for a location that affects the relative vibration.

In the present embodiment, the description has been given of the case where the line & space mark is incorporated in the apparatus in advance, but it is clear that the mark may be added only for maintenance. It is also clear that the line & space mark may be in a signal detectable state even if it is other than tungsten.

(Embodiment 2) FIG. 14 is a schematic configuration diagram showing an electron beam drawing apparatus according to a second embodiment of the present invention. The same parts as those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

In this embodiment, the control power supplies 10 to 14 are connected to the variable frequency power supplies 10 'to 14', respectively, so that one power supply can supply power at a frequency different from that of the other power supplies.

For example, only the control power source 12 of the electronic lens 5 is connected to the variable frequency power source 12 ', and for example, the frequency 55H is used.
Drive with z. As shown in FIG. 15, the relative vibration of the electron beam and the stage is frequency-analyzed by a measuring method of detecting backscattered electrons while continuously moving the stage. In addition,
In FIG. 15, 41 is an XY stage, 42 is a laser interferometer, 43 is an Au mark, 44 is a deflection system, and 45 is a backscattered electron detector.

FIG. 16 shows an example of the measurement result. In the peak frequency, an even multiple of the variable frequency 55 Hz (2 times, 4 times
2 times higher harmonic numbers are observed. Even if the variable frequency is changed slightly, a harmonic number that is an even multiple of that frequency is observed. Therefore, it is expected that the control power supply 12 of the electron lens 5 has a problem, for example, around the ground. Therefore, it suffices to intensively investigate the control power supply 12. It is confirmed from other measurements that the other peak frequencies observed in FIG. 16 are caused by mechanical relative vibration.

The above-described measurement is carried out for all control power supplies, and if there is a problem, the cause thereof is eliminated, so that the electrical vibration of the relative vibration between the electron beam and the stage can be eliminated. Therefore, highly accurate drawing is possible. In other words, according to the present embodiment, it is possible to easily find the cause of the relative vibration between the electron beam and the stage caused by the electrical cause, and it is possible to perform highly accurate drawing.

In this embodiment, the variable frequency power source 10 'is used.
Although a description has been given of the case where the components 14 'to 14' are incorporated in the apparatus in advance, it is obvious that the variable frequency power supply may be added only for maintenance.

(Embodiment 3) Next, a third embodiment of the present invention will be described. In this embodiment, noise is detected in the earth line, signal line and power supply line of the device, and the wiring of each line is devised so that noise is not generated.

The main electron beam oscillation frequencies of the electron beam drawing apparatus are the power supply frequency (50 Hz) and its harmonics (100, 150, 200 Hz, ...). Among them, the fundamental wave, 50 Hz, is the main component.

FIG. 17 shows a configuration for detecting electron beam vibration. The electron beam 53 vibrates due to noise. The deflection amplifier 51 and the deflection electrode 52 irradiate the electron beam (rectangular) 53 to a position on the silicon substrate 55, which is half the mark 54. The mark 54 and the silicon substrate 55 have different reflectivities of the electron beam irradiated. That is, the reflectance of the mark 54 is higher than that of the silicon substrate 55. The reflectance differs depending on the material and thickness of the mark,
For simplification, the reflectance of the silicon substrate 55 is set to zero and the reflectance of the mark 54 is set to 1.

Assuming that the area of the rectangular electron beam 53 is A, FIG.
Mark the half of the rectangular electron beam 53 as indicated by the solid line 8
4 irradiates all of the rectangular electron beam 53 with the mark 5
The amount of backscattered electrons input to the backscattered electron detector 56 is 1/2 as compared with the case of being located at 4. When the edge of the mark 54 is irradiated with only half of the rectangular electron beam 53 and the rectangular electron beam 53 vibrates due to noise, the amount of reflected electrons is modulated by noise. The reflected electrons modulated by noise can be detected by the reflected electron detector 56, and its amplitude and frequency can be measured by the spectrum analyzer 58 (or oscilloscope).

When the system becomes large-scale, it is very difficult to find a noise source from which noise is mixed.
Therefore, the amplitude and frequency slightly different from the amplitude and frequency of noise are generated by the signal generator 60, and the injection probe 5
The output of the signal generator 60 is input to the signal line, the power supply line, and the ground line by 9. The output of the signal generator 60 is also sent to the spectrum analyzer 58 at the same time and compared with the output of the backscattered electron detector 56. In the unaffected line, the components (amplitude, frequency) of the signal generator 60 are not observed in the backscattered electron detector 56. Further, in the affected line, the components (amplitude, frequency) of the signal generator 60 are observed in the backscattered electron detector 56.

Now, with the injection probe 59, noise of 55 Hz close to the power source frequency is grounded in the electron beam drawing apparatus.
It is injected into the line 61 (noise current Iearth). The vibration of the rectangular electron beam 53 at this time is detected by the backscattered electron detector 56 (rectangular beam vibration Aeart of injection noise component).
h). Similarly, noise is injected into the signal line and the power supply line, and the vibration of the rectangular electron beam 53 due to the influence is measured. The noise current injected into the signal line and the vibration of the rectangular electron beam 53 (Isignal, Asignal) are measured, and the noise current injected into the power supply line and the vibration of the rectangular electron beam 53 (Isignal) are measured.
line, Aline) is measured. The ratio of the noise current injected into the earth line 61, the signal line, and the power supply line to the vibration of the rectangular electron beam 53 (Aearth / Iearth, Asignal / I
signal, Aline / Iline) are calculated respectively. The place where the ratio is large has a large influence of noise.

Although the above description is for the detection of the horizontal (X) component, the vertical (Y) component can be detected by positioning the rectangular electron beam 53 above the mark 54. Further, the rectangular electron beam 53 has been described, but the same effect can be obtained with a point electron beam. Even when the electron beam is scanned, the scanning frequency is modulated by noise, and the above-described measurement can be similarly performed by detecting the modulation component. Further, although the power source frequency is described in the present embodiment, the same measurement can be performed even when the noise is at a higher frequency.

In the case of a large-scale device such as an electron beam drawing device, the number of signal lines, power supply lines, and ground lines exceeds several hundreds. It is almost impossible to identify which of these lines is generating noise and vibrating the electron beam. By injecting noise into each line at a specific frequency as in the above method and measuring the influence of each line, the noise source can be easily specified.

(Embodiment 4) Next, an electron beam drawing apparatus according to a fourth embodiment of the present invention will be described. The present embodiment is an electron beam drawing apparatus capable of correcting the relative displacement in real time by using the relative displacement detection method described above and improving the drawing accuracy. Here, a beam forming mask and a wafer continuous movement type electron beam drawing apparatus will be described in detail as an example.

FIG. 19 is a view showing the schematic arrangement of the electron beam drawing apparatus according to this embodiment. First, the configuration of the optical system will be described. In the figure, 111 is an electron gun, and the electron beam emitted from this electron gun 111 is adjusted to an appropriate current density by a condenser lens 112, and irradiates a beam shaping aperture 113. The image of the aperture 113 is projected onto the mask 117 by the projection lens 114. The irradiation position of the aperture image is moved by the beam forming deflector 115. A plurality of rectangular holes 118 are formed in the mask 117 together with the chip pattern.
The rectangular hole 118 is a rectangular hole that is used when a vibration is measured while generating a rectangular beam when the dimensions are changed.
The image of the mask 117 illuminated with the image of the aperture 113,
Alternatively, an image formed by overlapping the image of the aperture 113 and the rectangular hole is reduced and projected on the wafer 124 by the reduction lens 119 and the objective lens 120.

In the figure, reference numeral 121 is a main deflector for positioning the image of the mask 117 on the wafer 124, and 122 is a sub deflector (high-speed deflector) used for alignment between the mask 117 and the wafer 124. . Reference numeral 123 denotes a wafer stage on which the wafer 124 is mounted and which is movable in the direction orthogonal to the beam axis.

Next, the structure of the control system will be described. The mask stage 116 is driven by a drive circuit 131 which operates according to a command from a control computer (CPU) 130, and is moved in a direction orthogonal to the beam axis direction. The moving position of the mask stage 116 is detected by the laser length measuring device 132 and the position circuit 134, and this detection information is stored in the CPU 13.
0 and the sub deflection circuit 142 described later. The laser length measuring device 132 irradiates the mask stage 116 with laser light and measures the position based on the output of the reflected light. The wafer stage 123 is driven by a drive circuit 135 that operates according to a command from a control computer (CPU) 130, and moves in a direction orthogonal to the beam axis direction. The moving position of the wafer stage 123 is detected by the laser length measuring device 136 and the position circuit 138, and this detection information is obtained by the CPU 130 and a sub-deflection circuit 145 described later.
Sent to.

The main beam deflector 115 for beam shaping has a C
A deflection voltage is applied from the main deflection circuit 141 controlled by the PU 130. Further, the beam forming sub-deflector 12
A deflection voltage is applied to 5 from a sub-deflection circuit 142 that inputs position information from the CPU 130 and the position circuit 134. As a result, the main deflector 115 moves the aperture image on the mask 113. The sub-deflector 125 corrects the position of the aperture image according to the difference between the theoretical position and the actual position of the mask stage 116. Similarly, a deflection voltage is applied from the main deflection circuit 144 to the main deflector 121, and the sub deflection circuit 14 is applied to the sub deflector 122.
A sub-deflection voltage is applied from 5. As a result, the main deflector 121 moves the mask image of the small area on the wafer 124. The sub-deflector 122 corrects the position of the mask image according to the difference between the theoretical position and the actual position of the wafer stage 123.

In the figure, 126 is a blanking deflector for turning the beam on and off, and 143 is a blanking deflector 12.
A blanking circuit for applying a blanking voltage to 6 is a reflection electron detector 146, and a signal detection circuit 147.

Next, the movement of the mask and the wafer and the exposure and vibration correction will be described. Mask stage 116
And the wafer stage 123 are moved in synchronization with each other. As shown in FIG. 20, the mask 117 has a pattern and rectangular holes 118. Here, 118 ₁ , 118 ₂ , ...
118 _n forms a rectangular beam when making vibration measurements.
Further, as shown in the figure, the pattern is divided into several stripes corresponding to the rectangular holes, and the arrow A indicates the movement of the irradiation position of the electron beam. An arrow A ₁ indicates a state in which the mask stage 116 continuously moves to form a rectangular beam to search for a mark on the sample surface, and an arrow A ₂ indicates drawing and an arrow A _2.
3 shows that the mask stage 116 moves stepwise, and arrow A ₄ shows that a rectangular beam is formed again and mark search is performed.

The movement of the irradiation position of the rectangular beam on the sample surface is shown in FIG. At the arrow C ₁ , a mark search is performed using a rectangular beam formed by the rectangular hole 118. Drawing is performed at the arrow C ₂ , step movement is performed at the arrow C ₃ , and further arrow C _{4 is performed.}
Perform mark search again. Here, 128 is the wafer 1
It is a vibration measurement mark formed on 24.

When drawing a plurality of chips, FIG.
The mark arrangement is as shown in 1 (b). That is, when the continuous movement is started, the rectangular beam formed by the rectangular hole 118 is scanned on the vibration measurement mark 128, the backscattered electrons are detected by the backscattered electron detector 146, and the x, By measuring the relative displacement in the y direction and feeding back the difference to the sub deflection circuit or the main deflection circuit that controls the electron beam, the relative vibration between the electron beam and the wafer can be corrected during writing. It is also possible to feed back to both circuits and perform the correction.

In the drawing apparatus having such a structure, the relative displacement vibration of the beam and the mark can be measured at the time of drawing, and the difference can be feedback-corrected by the sub-deflection circuit or the main deflection circuit for controlling the electron beam. Even with a beam forming mask and a wafer continuous movement type electron beam drawing apparatus having a high throughput, extremely high drawing accuracy can be achieved.

Further, in the present embodiment, the position correction is performed by the electron beam by feedback-correcting the relative displacement error to the sub-deflection circuit or the main deflection circuit. However, the relative displacement is slow low frequency such as beam drift. If the vibration is, the above relative displacement error can be fed back to the sample stage drive circuit 135 or the mask stage drive circuit 131 to perform position correction using the stage. In this case, the device configuration is simple,
The above object can be achieved at a lower cost than in the case of performing correction using a beam.

Further, although the present embodiment is an electron beam drawing apparatus which exposes while continuously moving a mask and a wafer,
Obviously, it may be a variable shaped beam drawing apparatus of a wafer table continuous movement type, in which only the stage is moved for exposure.

(Embodiment 5) FIG. 22 shows a semiconductor device according to a fifth embodiment of the present invention. This example is an example of mark arrangement of a semiconductor device when a fine circuit is manufactured using an electron beam drawing apparatus.

In the first embodiment described above, the relative displacement detecting mark is arranged around the circuit pattern. However, in the position correction with such a mark, the correction interval is long, and therefore it is necessary to perform the correction at a shorter time interval when performing high-precision drawing. FIG. 22 shows
This is to realize this. Marks for measuring relative displacement vibrations of the beam and the marks are arranged not only around the circuit pattern but also inside the circuit pattern portion. Since the layout information about the circuit pattern is known in advance,
A mark 158 is provided at a position where the circuit pattern is not arranged based on the information.

Next, an apparatus configuration for drawing a sample (wafer) having such marks will be described with reference to FIG. The same parts as those of FIG. 19 described in the fourth embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

Although it is basically the same as that of FIG. 19, a gate circuit 200 and a signal processing circuit 201 are additionally provided in this embodiment. The gate circuit 200 is a CPU
Upon receiving the signal from 130, the beam scans the mark, and at the same time, sends a trigger signal to the signal detection circuit 147 to make the backscattered electron detector 146 ready for signal detection.
The time during which the backscattered electron detector 146 can detect a signal is C
It is determined according to the signal from the PU 130. The captured signal is processed by the signal processing circuit 201, the relative displacement between the mark and the beam is calculated, and the relative displacement amount is returned to, for example, the sub deflector to correct the relative displacement.

As described above, in the present embodiment, the marks can be set not only in the peripheral area of the circuit pattern but also in the area where the pattern does not exist inside the circuit, so that the position can be corrected at a shorter interval, and the drawing accuracy is remarkable. Can be expected to improve.

(Sixth Embodiment) Next, a displacement error measuring method according to a sixth embodiment of the present invention will be described. The device configuration is the same as in FIG. The present embodiment differs from the first embodiment in the mark structure.

FIG. 24 shows the structure of the mark used in this embodiment, and the process of making it will be described. The mark is created before the first patterning of the circuit pattern. First, SiO ₂ is deposited on the Si substrate by the CVD method, and then a photoresist is applied and exposed by using light or an electron beam to form a resist pattern. RIE with SiO ₂ using the resist pattern as a mask
After etching using the method, the resist is peeled off. Finally, the Si substrate is etched using SiO ₂ as a mask, and S
The iO ₂ is removed to form the mark. That is, in the figure, 301 is the Si substrate surface and 302 is the groove created in the above process.

By forming a step on the surface of the Si substrate and forming a mark in this way, a difference occurs in the amount of backscattered electrons on the surface 301 and the surface 302. Therefore, the same function as the mark shown in the first embodiment is achieved. . Of course, the depth of the groove here can be made as small as possible within the range in which the amount of reflected electrons varies.

In this embodiment, a mark was previously formed on a part of the sample, and the circuit pattern was exposed using the mark. However, a part of the pattern can be used as a mark by the following procedure. Is.

After the first exposure of the circuit pattern, a contact made of, for example, tungsten, which has a shape which has a graphic correlation with the shape of the electron beam formed by the molding mask in a part of the circuit pattern. Use the pattern as a mark. Since the position information of this contact pattern is known in advance, a part that does not overlap the circuit pattern to be drawn can be used as a mark. By scanning the mark with a rectangular beam that matches the mark shape, the next circuit pattern is exposed while measuring and correcting the relative displacement error between the rectangular beam and the sample. Of course, not only the first circuit pattern,
Even in the second and subsequent patterns, a part of them can be used as a mark.

Since tungsten is a heavy metal, the surrounding materials have different (large) reflection electron coefficient and secondary electron emission coefficient, so that an effective mark can be used. Further, it is clear that the mark may be made of a material other than tungsten as long as it has a reflected electron coefficient and a secondary electron emission coefficient different from those of the surrounding material.

(Embodiment 7) Next, an electron beam drawing apparatus according to a seventh embodiment of the present invention will be described. In this embodiment, an electron beam drawing apparatus capable of correcting relative displacement in real time by using the above-mentioned relative displacement detection method to improve drawing accuracy is provided. An example will be described in detail.

FIG. 25 is a view showing the schematic arrangement of an electron beam drawing apparatus according to this embodiment. First, the configuration of the optical system will be described. In the figure, 111 is an electron gun, and the electron beam emitted from this electron gun 111 is adjusted to an appropriate current density by a condenser lens 112, and irradiates a beam shaping aperture 113. The image of the aperture 113 is projected onto the mask 117 by the projection lens 114. The irradiation position of the aperture image is moved by the beam forming deflector 115. The image of the mask 117 irradiated with the image of the aperture 113 is a reduction lens (not shown).
And the objective lens 120 performs reduced projection on the wafer 124.

In the figure, 121 is a main deflector for positioning the image of the mask 117 on the wafer 124, and 122 is a sub-deflector (high-speed deflector). Further, 123 is the wafer 1
A wafer stage having 24 mounted thereon and movable in a direction orthogonal to the beam axis is shown. Next, the configuration of the control system will be described. The wafer stage 123 is a control computer (C
PU) 130 drive circuit 135 operated by a command from
Driven by, and moves in the direction orthogonal to the beam axis direction. The moving position of the wafer stage 123 is detected by the laser length measuring device 136 and the position circuit 138, and this detection information is sent to the CPU 130 and the sub deflection circuit 145 described later. The main deflector 121 is supplied with a deflection voltage from the main deflection circuit 144, and the sub-deflector 122 is supplied with a sub-deflection voltage from the sub-deflection circuit 145. As a result, the main deflector 121
Moves the mask image of a small area on the wafer 124. The sub-deflector 122 corrects the position of the mask image according to the difference between the theoretical position and the actual position of the wafer stage 123.

Next, the movement of the wafer and the exposure and vibration correction in this embodiment will be described.

The movement of the irradiation position of the rectangular beam on the sample surface is shown in FIG. 21 (a). The arrow C ₁ indicates the rectangular hole 1
18 is performed mark search rectangular beams formed by the drawing, the step movement by arrow C _3, a further mark search again by arrows C ₄ carried by arrow C _2. Here, 128 is a vibration measuring mark. In case of drawing a plurality of chips, the marks are arranged as shown in FIG.

That is, when the continuous movement is started, the rectangular beam formed by the mask 117 is applied to the vibration measuring mark 12
8, the backscattered electrons are detected by the backscattered electron detector 146, the relative displacement between the rectangular beam and the mark in the x and y directions is measured, and the difference is fed back to the sub-deflection circuit that controls the electron beam. Thus, the relative vibration between the electron beam and the wafer can be corrected during drawing. Further, if the relative vibration is a slow low-frequency vibration such as beam drift, correction can be performed in the main deflection circuit, and it is also possible to perform feedback by returning to both circuits for correction.

In the drawing apparatus having such a structure, the relative displacement vibration between the beam and the mark can be measured at the time of drawing, and the difference between them can be feedback-corrected by the sub-deflection circuit or the main deflection circuit for controlling the electron beam. It is possible to achieve extremely high drawing accuracy. Although the variable shaped beam drawing apparatus is used in the present embodiment, it is obvious that a round beam raster scanning sample continuous movement type electron beam apparatus that performs exposure using a round beam may be used.

(Modification) The present invention is not limited to the above embodiments. The mark used in the embodiment is not limited to the W film, and may be a material having a large difference in electron beam reflectance from the wafer, generally a heavy metal. Further, the position where the mark is provided is not limited to the position on the wafer, and may be on the stage. Further, the present invention is not limited to the electron beam writing apparatus and can be applied to the ion beam writing apparatus. In addition, various modifications can be made without departing from the scope of the present invention.

[0109]

As described in detail above, according to the present invention, the charged beam or the stage is continuously moved by using the displacement error measuring mark in which the shape which is graphically correlated with the charged beam shape is repeatedly arranged. By doing so, the relative vibration between the charged beam and the sample can be easily measured. Then, by feeding back the result to the beam deflection system, the stage drive system, etc., it is possible to perform highly accurate drawing.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing an electron beam drawing apparatus according to a first embodiment.

FIG. 2 is a schematic diagram for explaining the shape of a mark used in the first embodiment.

FIG. 3 is a cross-sectional view showing a manufacturing process of the mark used in the first embodiment.

FIG. 4 is a perspective view showing an example in which a mark in the first embodiment is an uneven mark.

FIG. 5 is a perspective view showing an example in which the mark in the first embodiment is an embedded mark.

FIG. 6 is a diagram showing a measuring method for frequency analysis of relative vibration between an electron beam and a stage.

FIG. 7 is a diagram showing a frequency analysis result (continuous stage movement) of relative vibration between an electron beam and a stage.

FIG. 8 is a diagram showing a frequency analysis result (stage stop) of relative vibration between an electron beam and a stage.

FIG. 9 is a diagram showing a frequency analysis result (stage speed variable) of relative vibration between an electron beam and a stage.

FIG. 10 is a diagram showing a frequency analysis result measured by using an acceleration pickup attached to a stage.

FIG. 11 is a diagram showing a frequency analysis result of a signal of a laser interferometer.

FIG. 12 is a diagram for explaining a conventional mark position detection method.

FIG. 13 is a diagram showing a mark pattern for measuring a displacement error in the first embodiment.

FIG. 14 is a diagram showing a schematic configuration of an electron beam drawing apparatus according to a second embodiment.

FIG. 15 is a diagram showing a measuring method for frequency analysis of relative vibration between an electron beam and a stage.

FIG. 16 is a diagram showing an example of measurement results in the second embodiment.

FIG. 17 is a diagram showing a configuration for performing electron beam vibration detection according to the third embodiment.

FIG. 18 is a diagram showing a positional relationship between an electron beam and a mark in the third embodiment.

FIG. 19 is a diagram showing a schematic configuration of an electron beam drawing apparatus according to a fourth embodiment.

FIG. 20 is a diagram showing a relationship between a mask pattern used in the fourth embodiment and rectangular holes.

FIG. 21 is a diagram showing the movement of the irradiation position of the rectangular beam on the sample surface in the fourth example.

FIG. 22 is a diagram showing a mark arrangement example of a semiconductor device according to a fifth embodiment.

FIG. 23 is a diagram showing a schematic configuration of an electron beam drawing apparatus used in the fifth embodiment.

FIG. 24 is a diagram showing the structure of a mark used in the displacement error measuring method according to the sixth embodiment.

FIG. 25 is a diagram showing a schematic configuration of an electron beam drawing apparatus according to a seventh embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vacuum tank 2 ... Electron gun 3,4 ... Aperture 5,6 ... Electron lens 7,32 ... Sample substrate 8, 31 ... XY stage 9, 33 ... Electron beam 10-14 ... Control power supply 21 ... Resist 22 ... C film 23 ... Al ₂ O ₃ film 24, 34 ... W film (mark) 25 ... Si substrate

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuka Sugihara 1 Komukai Toshiba Town, Komukai-ku, Kawasaki City, Kanagawa Prefecture Corporate Research & Development Center, Toshiba (72) Inventor Atsushi Miyagaki Komukai, Kawasaki City, Kanagawa Prefecture TOSHIBA-Cho No. 1 in stock company Toshiba Tamagawa Plant (72) Inventor Hideo Kusakabe Komukai-komukai-ku, Kawasaki-shi, Kanagawa TOSHIBA-cho No. 1 Stock company in Toshiba R & D Center (72) Inventor Jun Takamatsu Kawasaki, Kanagawa Prefecture Komukai-Toshiba-cho 1-ku, Toshiba Research & Development Center

Claims (5)

[Claims] 1. A charged beam drawing apparatus for continuously moving a stage on which a sample is mounted and deflecting a charged beam on the sample to draw a desired pattern on the sample, wherein a heavy metal mark having the same width as one side of the beam. A means for setting a mark of a line & space pattern in which a plurality of lines are arranged at the same interval as the width on the sample or the stage, and irradiating the mark with the beam, and continuously connecting at least one of the beam and the stage in a predetermined direction And a means for detecting a reflected beam from the mark at this time, and a means for measuring a relative vibration of the beam and the stage during continuous movement based on the detected reflected beam signal. Charged beam drawing device. 2. A charged beam drawing apparatus for deflecting a charged beam on a sample to draw a desired pattern on the sample, wherein each of a plurality of control circuits associated with a charged beam optical system has a remaining control circuit independently. Means for supplying electric power at different frequencies (variable frequency), means for irradiating the mark set on the stage with the charged beam and detecting the reflected beam, and the detected reflected beam signal for the frequency. A charged beam drawing apparatus comprising: a means for analyzing and determining whether or not the control circuit is operating normally depending on whether or not the variable frequency is found in a peak frequency. 3. A sample or a stage on which the sample is mounted, a shape having a graphic correlation with the shape of the charged beam formed by a shaping mask is repeatedly arranged as displacement error measurement marks, and the charged beam Is irradiated to the mark, and at least one of the charged beam and the sample is continuously moved. At this time, a reflected beam or a secondary beam from the mark generated by the overlap between the charged beam and the mark is detected, A displacement error measuring method using a charged beam, wherein a relative displacement error between the charged beam and the mark is obtained based on a signal. 4. A means for repeatedly arranging, on a sample or a stage on which the sample is mounted, a shape which is graphically correlated with the shape of a charged beam formed by a molding mask as displacement error measuring marks, and the charged beam. Irradiating the mark with at least one of the charged particle beam and the sample, and continuously moving at least one of the charged particle beam and the sample, and detecting a reflected beam or a secondary beam from the mark caused by the overlap between the charged particle beam and the mark. Means for measuring the relative displacement error between the charged beam and the mark based on the signal, and means for returning the measured relative displacement error to the deflection system for the charged beam to correct and control the beam position. A charged beam drawing apparatus characterized by the above. 5. A shape, which is graphically correlated with the shape of a charged beam formed by a shaping mask, is repeatedly arranged on a surface to be drawn as a mark for measuring a displacement error. At least one of the samples was measured for relative displacement error during continuous movement, and the measured relative displacement error was fed back to the deflection system of the charged beam to correct and control the beam position. A semiconductor device having a displacement error measuring mark, in which a desired pattern is drawn in this state.