JP2015162265A - Charged particle beam apparatus using electrostatic type rotation field deflector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus using an electrostatic type rotation field deflector that can achieve an image having little distortion by scanning a sample with a low distortion over a broad range.SOLUTION: A charged particle beam apparatus has: an objective lens for narrowing a generated charged particle beam and irradiating a sample with the narrowed charged particle beam; an electrostatic type rotation field deflector which is provided between the generated charged particle beam and the objective lens or in the objective lens, has electrodes confronting each other at least in an X-direction and a Y-direction perpendicular to the X-direction in a circumferential direction, and is shaped so that each of the electrodes is rotated in the axial direction by a predetermined angle in at least the range from 30 degrees to 180 degrees, or and then rotated to an original angle position in the opposite direction; and a scan power source for applying a predetermined scanning voltage to each of the confronting electrodes of the electrostatic type rotation field deflector to deflect a charged particle beam, thereby performing surface scanning using the charged particle beam on the sample.

Description

  The present invention relates to a charged particle beam apparatus in which aberration is reduced using an electrostatic rotating field deflector.

  In recent years, as the pattern formed on the semiconductor has been miniaturized, the mask pattern for drawing the pattern becomes complicated, and the conventional one-dimensional dimensional inspection is insufficient, and the two-dimensional accurate dimensional inspection is performed. is necessary.

  A so-called “lithography simulation” method or the like is used for two-dimensional inspection of a mask having a complicated pattern, and this requires an image with a relatively wide field of view of about 10 μm square and a small distortion. The Therefore, there is a need for a scanning electron microscope (SEM) that can obtain a high-resolution image with a small distortion and a relatively wide field of view.

Further, as an electrostatic rotary field deflector, there is a pattern yoke (Non-patent Document 1 and Non-patent Document 2 below) which has been tried as a deflection electrode of a CRT. These pattern yokes described in Non-Patent Documents 1 and 2 have a shape in which a development pattern is a pattern formed of a curve represented by a trigonometric function and is wound around a cylinder, and is intended to improve deflection sensitivity.
Katsumi Ura, Nano Electron Optics, page 147, Kyoritsu Publishing Co., Ltd. (2005) K. Schlesinger: Post-Acceleration and Electrostatic Deflection, PROCEEDINGS OF THE IRE.44.p659-p667 (1956)

  Conventionally, in a SEM, a two-stage magnetic deflector using a coil is used before an objective lens.

  However, it is difficult to manufacture a magnetic field deflector by mechanically winding a coil, causing image distortion due to mechanical asymmetry of the deflector, and it is difficult to acquire an image with a wide field of view and small distortion. There was a problem.

  In SEM and focused ion beam apparatus, an electrostatic scanning deflector (electrostatic deflector) composed of a quadrupole or an octupole in which a cylinder is divided into four or eight in the direction of the axis of symmetry is used. . An electrostatic deflector can easily obtain mechanical accuracy compared to a magnetic deflector. However, the quadrupole deflector has a drawback that image distortion tends to increase. Further, in the octupole deflector, the image distortion can be made relatively small, but there is a problem that the scanning control system becomes more complicated than the scanning control system of the quadrupole deflector.

  Further, data (image) having a certain wide field of view is required for lithography simulation (for example, about 10 μm × 10 μm to 16 μm × 16 μm).

  However, in the SEM, there is a problem that it is very difficult to photograph this wide-field image without distortion (with low distortion). Therefore, conventionally, there is a problem that the efficiency is poor because an image is divided and captured in a narrow region of about 3 μm × 3 μm, and the images are connected and used for lithography simulation. Furthermore, since each image is captured with overlapping margins between the images so that there is no defect, the efficiency is further deteriorated.

  Therefore, there is a need for a charged particle beam apparatus (for example, SEM) that scans a wide field of view without distortion (with low distortion) and acquires an image.

  Further, the above-described conventional pattern yoke is intended to improve deflection sensitivity, not to reduce distortion aberration of the present invention described later, but to reduce image distortion in a charged particle beam apparatus. There is no description of the applied examples or suggestions.

  The present invention is generated in a charged particle beam apparatus that scans a sample by deflecting a charged particle beam using an electrostatic deflector and detects an emitted, reflected, or absorbed charged particle to generate an image. An objective lens for finely squeezing the charged particle beam to irradiate the sample, and between the generated charged particle beam and the objective lens or in the objective lens, and at least the X direction in the circumferential direction and the Y direction perpendicular thereto Electrostatic rotation with each electrode facing each other and having a shape in which each electrode rotates at a predetermined angle of at least 30 degrees and within 180 degrees in the axial direction, or then rotates to the original angle in the opposite direction And a scanning power source that applies a predetermined scanning voltage to the opposing electrodes of the electrostatic rotating field deflector, deflects the charged particle beam, and scans the surface of the sample with the charged particle beam. It is configured.

  At this time, each electrode is combined with a shape that rotates at a predetermined angle of at least 30 degrees and within 180 degrees in the axial direction, or a shape that rotates to the original angle in the opposite direction, one or each in combination. ing.

  In addition, two stages of electrostatic rotating field deflectors are provided on the axis, and the charged particle beam on the axis is deflected off-axis at the first stage, and from the off-axis to the axial direction at the second stage, or at the center of the objective lens. It is designed to deflect in the opposite direction toward

  Also, the axial length of the electrostatic rotating field deflector is increased to reduce the voltage applied to the opposing electrodes in the X and Y directions, or the axial length of the electrostatic rotating field deflector. The length is shortened to reduce the size.

  In addition, the electrostatic rotary field deflector is formed from a conductive cylindrical tube, in the shape of electrodes facing each other in the circumferential direction at least in the X direction and the Y direction in the direction perpendicular thereto, and each electrode is in the axial direction. It is created by cutting into a shape that rotates at a predetermined angle of at least 30 degrees and within 180 degrees, or a shape that rotates in the opposite direction to the original angle.

  In addition, after attaching a jig to a conductive cylinder and making an incision to create an electrostatic rotary field deflector, an electrostatic rotary field deflector with an incision created inside a cylindrical tube Is fixed through an insulating terminal.

  Further, the number of poles of the electrodes constituting the electrostatic rotating field deflector is set to be an integral multiple of 4 poles (including 1).

  In addition, when each electrode constituting the electrostatic rotating field deflector is rotated by a predetermined angle in the axial direction or thereafter rotated to the original angle in the opposite direction, the electrostatic rotating The length of the field deflector in the axial direction is set to be an integral multiple (including 1 time) thereof.

  Further, the objective lens is a magnetic lens, and has a structure in which the upper magnetic pole and the lower magnetic pole face the sample, or a structure in which only the lower magnetic pole faces.

  According to the present invention, a charged particle beam is deflected by using an electrostatic rotating field deflector and the sample is scanned in a plane, whereby the sample can be scanned with a low distortion over a wide range to obtain an image with a small distortion. .

  As a result, a high resolution image with a strain of 1 nm or less can be obtained with a relatively wide field of view (10 μm × 10 μm or more) (see FIG. 7), and an SEM suitable for lithography simulation can be provided.

  FIG. 1 shows a block diagram of an embodiment of the present invention. Here, as a charged particle beam (a beam having a negative or positive charge such as an electron beam or an ion beam), an electron beam is taken as an example, and the configuration of the embodiment is described in detail under the configuration shown in FIG. Explained.

  In FIG. 1, an objective lens 1 irradiates a sample 5 with a finely focused electron beam, and is a well-known lens, between an upper pole (upper magnetic pole) 2 and a lower pole (lower magnetic pole) 3. Further, here, a magnetic field is applied to act as a lens (schematically expressed) as shown by a dotted line in the figure. In FIG. 1, the upper pole (upper magnetic pole) 2 of the objective lens 1 faces the sample 5, and the lower pole (lower magnetic pole) 3 also faces the sample 5. As shown by the dotted line in FIG. 1, the lower pole (lower magnetic pole) 3 may be brought closer to the upper pole (upper magnetic pole) 2 so that the objective lens magnetic field generated on the upper surface of the sample is relatively localized near the optical axis. . FIG. 12 described later describes an example in which the upper pole (upper magnetic pole) 2 of the objective lens 1 does not face the sample 5 but the lower pole (lower magnetic pole) 3 faces the sample 5.

  Here, the objective lens 1 of FIG. 1 is configured as an immersion lens in which a large magnetic field is generated on the upper surface of the sample 5 to reduce spherical aberration and chromatic aberration. At this time, distortion aberration occurs due to the rotational field deflector (1) 11, the rotational field deflector (2) 12, and the objective lens 1 on the upper surface of the sample 5, and the image is distorted. However, the amount of distortion aberration is less than that of the conventional magnetic field type deflector by configuring the scanning deflection system with the electrostatic rotating field deflector (1) 11 and the rotating field deflector (2) 12 of the present invention. Can be significantly reduced (to be described later with reference to FIGS. 5 to 7).

  The secondary electron detector 4 detects secondary electrons emitted when the electron beam 10 scans the sample 5 in a plane, and is a secondary electron detector such as MCP. The secondary electron detector 4 or another detector may be attached to detect reflected electrons, X-rays, light, and the like.

  The sample 5 is deflected and scanned by the rotating field deflector (1) 11 and the rotating field deflector (2) 12 while irradiating the electron beam 10 narrowed down by the objective lens 1, and emitted secondary electrons. Is a target sample for acquiring an image by detecting with a secondary electron detector, such as a mask or a wafer.

  The electron beam 10 is an electron beam generated and focused by an electron gun and a focusing lens (not shown).

  The rotating field deflector (1) 11 and the rotating field deflector (2) 12 are electrostatic rotating field deflectors that scan the electron beam 10 in a plane with low distortion over a wide field of view, and are electrostatic quadrupoles. A deflector having a shape obtained by rotating an electrode (or an integer multiple of 4 poles) (described later with reference to FIGS. 2 to 11).

  Here, an operation of acquiring an image under the configuration of FIG. 1 will be briefly described.

  (1) The electron beam 10 is narrowed down by the objective lens 1 and irradiated on the sample 5, for example, a mask, and is shown in the electrostatic rotating field deflector (1) 11 and rotating field deflector (2) 12. A scanning deflection voltage is applied from an external power source, and the surface of the sample 5 is planarly scanned.

  (2) The secondary electrons emitted from the sample 5, for example, travel in the direction returning to the direction in which the electron beam 10 comes while spiraling in the magnetic field of the objective lens 1, and the secondary shown in the region where the magnetic field is reduced. It is attracted to a positive voltage applied to the electron detector 4 and irradiates and detects and amplifies the detection surface of the secondary electron detector 4 to generate a known secondary electron image.

  Hereinafter, the configuration and effects of FIG. 1 will be described in detail with reference to FIGS.

  FIG. 2 is an explanatory diagram of the rotary field deflector according to the present invention. FIG. 2 shows an example of the shape in the case of one set of four-pole rotary field deflectors. Here, FIG. 2A shows an example of an electrode of a rotating field deflector in the X and Y directions, and FIG. 2B shows an example of an electrode of a rotating field deflector only in the X direction.

In FIG. 2A,
The electrode described as + Vx is an electrode that deflects in the X direction, and here, a positive voltage is applied to the electrode.

    -The electrode described as -Vx is an electrode which deflects to a X direction, and is an electrode which applies a negative voltage here.

    -The electrode described as + Vy is an electrode which deflects in a Y direction, and is an electrode which applies a positive voltage here.

    -The electrode described as -Vy is an electrode which deflects in a Y direction, and is an electrode which applies a positive voltage here.

  As shown in the figure, by applying a voltage deflecting in the X direction (scanning deflection voltage) to + Vx and −Vx, and applying a voltage deflecting in the Y direction (scanning deflection voltage) to + Vy and −Vy, The electron beam 10 of FIG. 1 is deflected (two-stage deflection) by the rotating field deflector (1) 11 and the rotating field deflector (2) 12, respectively. As a result, the surface of the sample 5 is made to be in the X direction and the Y direction. Scanning (planar scanning) can be performed. The details will be described in detail below.

  In FIG. 2B, the + Vx and −Vx electrodes are obtained by extracting the + Vx and −Vx electrodes in FIG. The shape of the illustrated electrode rotates in the clockwise direction (the axial direction (downward direction) of the objective lens 1 in FIG. 1) from 0 degrees in the clockwise direction to 120 degrees in this case, and counterclockwise. This is an electrode having a shape that is returned from 120 degrees to 0 degrees and is repeated twice (for details, see FIGS. 3 and 11).

  Here, (1) (a) and (b) in FIG. 2 show that each electrode rotates at a predetermined angle of at least 30 degrees and within 180 degrees in the axial direction (either clockwise or counterclockwise), and thereafter It has a shape that rotates in the opposite direction to the original angle (referred to as “shape A”). However, (2) the shape is not limited to this, and each electrode rotates in a predetermined angle (either clockwise or counterclockwise) within at least 30 degrees and within 180 degrees in the axial direction (“shape B”). (It is not always necessary to have a shape that rotates in the opposite direction to the original angle).

  Further, (3) the shape A and the shape B may be combined one by one, or (4) the shape A and the shape B may be combined in an arbitrary number.

  FIG. 3 is an explanatory diagram (part 2) of the rotary field deflector according to the present invention.

  FIG. 3A shows an example of the overall configuration of the rotating field deflector. Here, a state is schematically shown in which one cycle of rotating from 0 to 120 degrees counterclockwise and returning from 120 to 0 degrees is repeated twice. Since the electrode rotates in this way, when the electron beam 10 passes therewith, it is deflected by a deflection electric field in a different direction.

  3 (b) to 3 (f) show the electric fields (+ Vy and V +) applied to the electrodes + Vx and −Vx at 0 °, 60 °, 120 °, 60 °, and 0 ° in FIG. -Vy is a simulation result example of a state of 0V applied). As a whole deflection direction, the electron beam 10 is deflected in a direction synthesized by these electric fields.

  FIG. 4 is an explanatory diagram (part 3) of the rotary field deflector according to the present invention.

  FIG. 4 (a) schematically shows the state of an electric field by simulation of a conventional quadrupole deflector (having a structure in which a cylinder is divided into four in the axial direction), and FIG. 4 (b) is a conventional octupole deflection. FIG. 4 (c) schematically shows the state of the electric field by the simulation of the quadrupole rotating field deflector of the present invention. Indicate.

  The conventional quadrupole deflector shown in FIG. 4A has a simple structure and simple application of a control voltage, but the electric field (potential) distribution is not so good and image distortion tends to occur.

  The conventional octupole deflector shown in FIG. 4B has a relatively wide electric field distribution parallel to the conventional quadrupole deflector shown in FIG. 4A. It is easy to reduce distortion. However, as described above, there is a problem that the scanning control system is more complicated than the scanning control system of the quadrupole deflector.

  The quadrupole rotating field deflector of the present invention shown in FIG. 4C can reduce image distortion over a wide range of 10 μm × 10 μm or more (see FIGS. 5 to 7). In addition, the octupole rotating field deflector can further have a parallel electric field distribution over a wide range.

FIG. 5 is an explanatory diagram (part 4) of the rotary field deflector according to the present invention. This shows a simulation result of the hexapole component of each deflection electrode that causes distortion aberration. Here, the horizontal axis is the distance mm from the central axis, the left side of the vertical axis is the electric field (V / m ³ ) of (a), (c), and the right side of (b).

  In FIG. 5, (a) a quadrupole deflector has a larger hexapole component than (b) an octupole deflector, and (c) a rotating field deflector has positive and negative values, which is zero on average, and has low distortion. Become.

  FIG. 6 is an explanatory diagram of a conventional deflector. This is different from the rotating field deflector (1) -rotating field deflector (2) -OL (objective lens 1) shown in FIG. 1 in the conventional (a) and (b) of FIG. An example of a simulation result in the case of using an electrostatic type quadrupole or octupole deflector (1) or deflector (2) is shown. Here, the horizontal axis indicates the strain (nm) in a 12 μm square field (12 μm × 12 μm field). The vertical axis represents a configuration example of the deflector.

  FIG. 6A shows an example of a simulation result in the case of combining 4-pole DEF1 (FIG. 4A) and 4-pole DEF2 (FIG. 4A) -OL (objective lens 1).

  FIG. 6B shows an example of a simulation result in the case of combining 4-pole DEF1 (FIG. 4A) -8-pole DEF2 (FIG. 4B) -OL (objective lens 1).

  FIG. 6C shows an example of a simulation result in the case of combining 8-pole DEF1 (FIG. 4B) −8-pole DEF2 (FIG. 4B) —OL (objective lens 1).

  Here, the system composed of (DEF1; octupole)-(DEF2; octupole)-(OL) in FIG. 6C has the smallest distortion aberration. Next, in FIG. 6B, the distortion is slightly large, and in FIG. 6A, the distortion aberration is 10 times or more. As can be seen from FIG. 6 (b), it can be seen from the configuration of FIG. 6 (a) that even if only DEF1 is configured by a quadrupole, the distortion does not increase so much. That is, if DEF with small distortion is used for DEF2 where the beam is away from the optical axis, it is effective in reducing distortion.

  From the above, although it is not easy to simulate distortion aberration with the rotary field deflector according to the present invention, small distortion aberration was obtained from FIGS. 3 to 5 and the experimental result FIG. 7 (described later).

  FIG. 7 shows an example of the results of the present invention. This shows an actual measurement example of distortion aberration in the configuration of FIG.

  (A) in FIG. 7 is a diagram in which the entire visual field of 7.2 μm × 7.2 μm is divided by 7 × 7, and the values obtained by multiplying the amount of deviation due to distortion of 49 points in total by 50 times are indicated by black circles, respectively. It is. The black circle having a value obtained by multiplying the shift amount due to the distortion shown at each lattice point or its vicinity by 50 times was extremely small as shown in the illustrated black circles and was 1 nm or less. The numerical values of the deviation amounts (maximum and minimum numerical values) are shown in FIG.

  FIG. 7B shows the maximum and minimum deviation amounts (SHIFT). The amount of deviation was obtained as an experimental result as shown below.

Shift (deviation amount) X (nm) Y (nm)
Max 0.66 0.42
Min -0.63 -0.45
here,
In FIG. 7A, the lattice spacing is 1.2 μm, and the outermost contour of the lattice points is 7.2 μm square (1.2 × 6 = 7.2 μm square).

    One grid point is an average of 10 chips, and the table in FIG. 7B shows the maximum and minimum values for 49 points.

  FIG. 8 shows a flowchart for manufacturing the rotating field deflector of the present invention.

  In FIG. 8, S1 performs the process except a cut. This is because, for example, when the quadrupole rotating field deflector shown in FIGS. 2 and 3 is formed, the processing except the notch of the rotating field deflector is performed, that is, the cutting of the rotating field deflector shown in FIG. The cylindrical cylindrical electrode material (no cut) 21 excluding the cut is processed.

  S2 is set on a jig. For example, the cylindrical electrode material (without cutting) 21 shown in FIG. 9 excluding the cut processed in S1 is set on a jig composed of a flange 22, a shaft 23, etc. No) 21 is fixed to a jig).

  S3 makes a notch. As shown in FIG. 9, in a state where the jig is set in S2, a predetermined cut is made in the cylindrical electrode material 21 by machining, and each pole of the rotary field deflector (here, a quadrupole is used). Therefore, cuts are made so that there are four poles (+ Vx, -Vx, + Vy, -Vy) (because they are fixed to the jig, they do not fall apart).

  In S4, the jig is removed for cleaning.

  S5 is set on a jig.

  S6 is insulated by the peak component and set inside the conductive cylindrical member (see FIG. 10). This will be described later with reference to FIG.

  In S7, the jig is removed.

  As described above, the cylindrical electrode material (without incision) 21 is cut to produce a rotating field deflector, cleaned, reset to the jig, set inside the conductive cylindrical member, and the jig is removed. Thus, the rotating field deflector (1) 10 and the rotating field deflector (2) 11 of FIG. 1 can be attached to the illustrated position of the objective lens 1.

  FIG. 9 shows a structural example of the rotary field deflector of the present invention. Here, a perspective view of a quadrupole rotating field deflector is shown for ease of explanation and drawing. Note that octupoles other than quadrupoles can be similarly produced. In the experiment, a quadrupole rotating field deflector was fabricated and the experimental result was obtained (see FIG. 7).

  In FIG. 9, the cylindrical electrode material 21 is a conductive cylindrical material that is a material of the rotating field deflector, and is any material as long as it is a conductive and easy-to-cut material such as aluminum. Good. The cylindrical electrode material 21 is fixed to a flange 22 and a shaft 23 serving as jigs with screws, and screws are used so that the respective electrodes do not fall apart even if a predetermined cut is made in the cylindrical electrode material 21 by machining or the like. It is fixed to the jig.

  The flange 22 and the shaft 23 hold the cylindrical electrode material 21 and hold (fix) the cylindrical electrode material 21 so that the cylindrical electrode material 21 does not fall apart even if it is cut and separated into each electrode.

  FIG. 10 shows a detailed set explanatory diagram of the rotary field deflector of the present invention. This is the detailed flowchart of S6 in FIG. 8 and the explanatory diagram thereof.

  In FIG. 10A, S11 fixes a peak component (cylindrical shape) whose outer side is threaded to a cylindrical member (conductive). As shown in FIG. 10B on the right side, this fixes a peak component (insulating, cylindrical) 31 having an external thread to a cylindrical member (conductive) 34.

  In S12, the rotating field deflector is inserted inside the cylindrical member. This is done by inserting a rotating field deflector 35 inside the cylindrical member 34 as shown in FIG.

  In step S13, the rotary field deflector is pulled and fixed through the peak part with a screw (conductive). Tighten the connection terminals with screws. This is because, as shown in FIG. 10B on the right side, the rotating field deflector 35 is pulled and fixed via the peak component 31 by the screw (conductive) 32 and the connection terminal 33 is shared by the screw 32. Tighten.

  As described above, the produced rotating field deflector is attached to a predetermined position inside the cylindrical member (conductive) 34 with high accuracy as shown in FIG. It becomes possible to fix the rotary field deflector (1) 11 and the rotary field deflector (2) 12 shown in FIG. Then, a predetermined scanning voltage is supplied from an external power source through the connection terminal 33, the electron beam 10 is deflected in two stages as shown by a dotted line in FIG. 1, and the wide field of view on the sample 5 is reduced in distortion (10 to 16 μm square). It is possible to scan the entire field of view with a distortion of 1 nm or less (see FIG. 7).

  FIG. 11 is a diagram illustrating the shape of the rotary field deflector according to the present invention. This shows an example of a quadrupole rotating field deflector for ease of explanation.

  11A shows a perspective view, and FIG. 11B shows a developed view.

  In FIG. 11A, the cylindrical electrode material 21 is a conductive cylindrical electrode material, and is a quadrupole in this example by making the notch 26 shown in the figure. Each of the electrodes is divided (because it is fixed with a jig made up of the flange 22, the shaft 23, etc. in FIG. 9, the electrodes do not fall apart even if the cuts 26 are made).

  The tap (for jig attachment) 24 is a tap for attaching to a jig comprising the flange 22 and the shaft 23 in FIG.

  The tap (for rotating field deflector fixing) 25 is for fixing the rotating field deflector 35 of FIG.

  In FIG. 11B, the developed cylindrical electrode material (with cut) 21 shown in FIG. 11 is a state where the cylindrical electrode material (with cut) 21 shown in the perspective view of FIG. This is shown schematically. The horizontal axis is the rotational direction (circumferential direction), and one round is 2πR (R is a radius). The vertical axis is the axial direction of the objective lens 1 of FIG.

  Here, since the cylindrical electrode material (with cut) 21 in FIG. 11B is a quadrupole, 2πR in the circumferential direction (rotation direction) is divided into four, and each electrode is here in the axial direction. Then, 0 degree-120 degrees ((2/3) πR) -0 degree is one period, and two periods are developed.

  (1) The length in the axial direction may be arbitrary. To increase the deflection sensitivity, the axial size is lengthened. On the other hand, to reduce the axial size, the axial size is shortened.

  (2) In addition, the period in the axial direction is 0 degree-120 degrees-0 degree here as one period, but 0 degree-120 degrees may be one period, and may be an integer multiple thereof.

  (3) Although the folding is performed at 0 to 120 degrees, the folding is not limited to 120 degrees, and may be in the range of 30 to 180 degrees.

  FIG. 12 is a block diagram showing another embodiment of the present invention. In FIGS. 1 to 11, the upper pole (upper magnetic pole) and the lower pole (lower magnetic pole) of the objective lens 1 of FIG. 1 are both facing the sample 5. Only the magnetic pole) may face the sample 5 as shown in FIG.

  In FIG. 12, this configuration is composed of an objective lens 1-1 in which the generation of a magnetic field by the objective lens on the surface of the sample 5 is reduced and two stages of rotary field deflectors 11 and 12 and a secondary electron detector 4 in front of the objective lens 1-1. ing. In the out-lens system OL of FIG. 12, the focal length is relatively large, and the distance from the axis (optical axis) of the electron beam 10 in the rotary field deflectors 11 and 12 can be reduced, so that image distortion due to deflection can be further reduced. There is a feature.

1 is a configuration diagram of one embodiment of the present invention. It is explanatory drawing of the rotation field deflector of this invention. It is explanatory drawing (the 2) of the rotation field deflector of this invention. It is explanatory drawing (the 3) of the rotation field deflector of this invention. It is explanatory drawing (the 4) of the rotation field deflector of this invention. It is explanatory drawing of the conventional deflector. It is an example of a result of the present invention. It is a preparation flowchart of the rotation field deflector of the present invention. It is a structural example of the rotary field deflector of this invention. It is detailed set explanatory drawing of the rotation field deflector of this invention. It is shape explanatory drawing of the rotation field deflector of this invention. It is another Example block diagram of this invention.

1, 1-1: Objective lens 2, 2-1: Upper pole (upper pole)
3, 3-1: Lower pole (lower pole)
4: Secondary electron detector 5: Sample 10: Electron beams 11, 12, 35: Rotating field deflector 21: Cylindrical electrode material 22: Flange 23: Shaft 24, 25: Tap 26: Cut 31: Peak component (cylindrical) Status)
32: Screw 33: Connection terminal 34: Cylindrical member

Claims (10)

In a charged particle beam apparatus that scans a sample by deflecting a charged particle beam using an electrostatic deflector and detects an emitted, reflected, or absorbed charged particle to generate an image,
An objective lens for narrowing the generated charged particle beam and irradiating the sample;
Provided between the generated charged particle beam and the objective lens or in the objective lens, electrodes provided in the circumferential direction are opposed to at least the X direction and the Y direction perpendicular thereto, respectively, An electrostatic rotary field deflector having a shape that rotates at a predetermined angle of at least 30 degrees and within 180 degrees in the axial direction, or a shape that rotates to the original angle in the opposite direction;
A scanning power source for applying a predetermined scanning voltage to the opposing electrodes of the electrostatic rotating field deflector, deflecting the charged particle beam, and scanning the surface of the sample with the charged particle beam. A charged particle beam apparatus using an electrostatic rotating field deflector.  Each electrode has a shape that rotates at a predetermined angle of at least 30 degrees and within 180 degrees in the axial direction, or a shape that rotates to the original angle in the opposite direction, each one or a combination of any number. The electrostatic rotary field deflector according to claim 1.   The electrostatic rotary field deflector is provided in two stages on the axis, and the charged particle beam on the axis is deflected off-axis in the first stage, and from the off-axis to the axial direction or on the center of the objective lens in the second stage. 3. A charged particle beam device using an electrostatic rotating field deflector according to claim 1, wherein the charged particle beam device deflects in a reverse direction.   4. A charged particle beam apparatus using an electrostatic rotary field deflector according to claim 3, wherein the first stage is a quadrupole deflector and the second stage is a rotary field deflector.   The axial length of the electrostatic rotary field deflector is increased to reduce the voltage applied to the opposing electrodes in the X and Y directions, or the axial length of the electrostatic rotary field deflector. The charged particle beam apparatus using the electrostatic rotating field deflector according to claim 1, wherein the size is reduced by reducing the length.   The electrostatic rotary field deflector is formed from a conductive cylindrical tube, in the shape of an electrode facing the circumferential direction at least in the X direction and the Y direction in the direction perpendicular thereto, and each electrode is in the axial direction. 2. The device according to claim 1, wherein the cut is made so as to form a shape that rotates at a predetermined angle of at least 30 degrees and within 180 degrees, or a shape that rotates in the reverse direction to the original angle. A charged particle beam apparatus using the electrostatic rotating field deflector according to claim 5.   In Claim 6, after attaching a jig | tool to the said conductive cylinder and making the said notch | incision and producing an electrostatic rotary field deflector, the static in which the said notch | incision made into the inside of a cylindrical cylinder was put in A charged particle beam apparatus using an electrostatic rotating field deflector, wherein the electric rotating field deflector is fixed via an insulating material.   8. The electrostatic according to claim 1, wherein the number of poles of the electrode constituting the electrostatic rotating field deflector is an integral multiple of 4 poles (including 1 times). 9. Charged particle beam device using a rotating field deflector.   When each electrode constituting the electrostatic rotating field deflector is rotated by a predetermined angle in the axial direction or thereafter rotated in the opposite direction to the original angle as one cycle, the electrostatic rotating 9. The charge using the electrostatic rotating field deflector according to claim 1, wherein the axial length of the field deflector is an integral multiple (including 1) thereof. Particle beam device.   10. The objective lens according to claim 1, wherein the objective lens is a magnetic lens and has a structure in which an upper magnetic pole and a lower magnetic pole face the sample, or a structure in which only the lower magnetic pole faces the sample. A charged particle beam apparatus using the electrostatic rotating field deflector according to any one of the above.