JP2000056281A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000056281A5 JP2000056281A5 JP1998224241A JP22424198A JP2000056281A5 JP 2000056281 A5 JP2000056281 A5 JP 2000056281A5 JP 1998224241 A JP1998224241 A JP 1998224241A JP 22424198 A JP22424198 A JP 22424198A JP 2000056281 A5 JP2000056281 A5 JP 2000056281A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- bonding pad
- electrode
- mesa
- pad forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 34
- 230000003287 optical effect Effects 0.000 claims description 31
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 19
- 230000031700 light absorption Effects 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10224241A JP2000056281A (ja) | 1998-08-07 | 1998-08-07 | 光変調器とその製造方法 |
| US09/245,838 US6282009B1 (en) | 1998-08-07 | 1999-02-08 | Light modulator and method of manufacturing the light modulator |
| DE19915898A DE19915898B4 (de) | 1998-08-07 | 1999-04-08 | Lichtmodulator und Verfahren zu dessen Herstellung |
| US09/839,120 US6384955B2 (en) | 1998-08-07 | 2001-04-23 | Light modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10224241A JP2000056281A (ja) | 1998-08-07 | 1998-08-07 | 光変調器とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000056281A JP2000056281A (ja) | 2000-02-25 |
| JP2000056281A5 true JP2000056281A5 (enExample) | 2004-12-16 |
Family
ID=16810711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10224241A Pending JP2000056281A (ja) | 1998-08-07 | 1998-08-07 | 光変調器とその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6282009B1 (enExample) |
| JP (1) | JP2000056281A (enExample) |
| DE (1) | DE19915898B4 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000056281A (ja) * | 1998-08-07 | 2000-02-25 | Mitsubishi Electric Corp | 光変調器とその製造方法 |
| SG102589A1 (en) * | 2000-08-16 | 2004-03-26 | Inst Materials Research & Eng | Buried hetero-structure opto-electronic device |
| US6580843B2 (en) | 2001-04-05 | 2003-06-17 | Fujitsu Limited | Optical device |
| US7449354B2 (en) | 2006-01-05 | 2008-11-11 | Fairchild Semiconductor Corporation | Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US20080070411A1 (en) * | 2006-09-20 | 2008-03-20 | John Ghekiere | Methods for uniformly etching films on a semiconductor wafer |
| US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| US8304829B2 (en) | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| US8227855B2 (en) * | 2009-02-09 | 2012-07-24 | Fairchild Semiconductor Corporation | Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same |
| US8148749B2 (en) * | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
| US8049276B2 (en) * | 2009-06-12 | 2011-11-01 | Fairchild Semiconductor Corporation | Reduced process sensitivity of electrode-semiconductor rectifiers |
| TW201426151A (zh) * | 2012-12-19 | 2014-07-01 | Hon Hai Prec Ind Co Ltd | 電光調製器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710171B2 (ja) * | 1991-02-28 | 1998-02-10 | 日本電気株式会社 | 面入出力光電融合素子 |
| JP2754957B2 (ja) * | 1991-07-10 | 1998-05-20 | 日本電気株式会社 | 半導体光制御素子およびその製造方法 |
| JP3484543B2 (ja) * | 1993-03-24 | 2004-01-06 | 富士通株式会社 | 光結合部材の製造方法及び光装置 |
| US5543957A (en) * | 1993-12-20 | 1996-08-06 | Nec Corporation | Optical modulator and method of producing the same |
| US5889913A (en) * | 1995-03-15 | 1999-03-30 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method of fabricating the same |
| JPH08316579A (ja) | 1995-05-18 | 1996-11-29 | Toshiba Corp | 光半導体素子及びその製造方法 |
| FR2748129B1 (fr) | 1996-04-29 | 1998-06-12 | Alsthom Cge Alcatel | Modulateur electro-optique a puits quantiques |
| JPH1075009A (ja) * | 1996-08-30 | 1998-03-17 | Nec Corp | 光半導体装置とその製造方法 |
| JP2000056281A (ja) * | 1998-08-07 | 2000-02-25 | Mitsubishi Electric Corp | 光変調器とその製造方法 |
-
1998
- 1998-08-07 JP JP10224241A patent/JP2000056281A/ja active Pending
-
1999
- 1999-02-08 US US09/245,838 patent/US6282009B1/en not_active Expired - Fee Related
- 1999-04-08 DE DE19915898A patent/DE19915898B4/de not_active Expired - Fee Related
-
2001
- 2001-04-23 US US09/839,120 patent/US6384955B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3936256B2 (ja) | 光半導体装置 | |
| US5901265A (en) | Optical semiconductor device and method of fabricating the same | |
| US20180136496A1 (en) | Integrated Electro-Optic Modulator | |
| JP2000056281A5 (enExample) | ||
| CN110865470A (zh) | 电光波导元件以及光模块 | |
| US20250199375A1 (en) | Electro-optical modulator and manufacturing method thereof | |
| US6384955B2 (en) | Light modulator | |
| JP2003526214A (ja) | 量子カスケードレーザーとその製造方法 | |
| JPH0451812B2 (enExample) | ||
| KR20160087960A (ko) | 전계흡수 광변조 소자 및 그 제조 방법 | |
| CN111562687B (zh) | 制作半导体器件的方法、半导体器件和半导体集成电路 | |
| CN111596473B (zh) | 制作半导体器件的方法、半导体器件和半导体集成电路 | |
| US9223088B2 (en) | Method for manufacturing semiconductor optical device | |
| US11822164B2 (en) | Electro-optical phase modulator | |
| US20250053032A1 (en) | Method for Integration of Optoelectronic Devices Comprising Pockels Materials | |
| US6473547B2 (en) | Optical components | |
| CN111562688B (zh) | 制作半导体器件的方法、半导体器件和半导体集成电路 | |
| CN111580289B (zh) | 制作半导体器件的方法、半导体器件和半导体集成电路 | |
| JP7145063B2 (ja) | 半導体装置およびその製造方法 | |
| JPS6036118B2 (ja) | 半導体レ−ザ装置 | |
| JP7786581B2 (ja) | 光変調器 | |
| US11435604B2 (en) | Hybrid EO polymer modulator with silicon photonics | |
| CN120752577A (zh) | 光调制器 | |
| CN118938519A (zh) | 半导体结构及其形成方法 | |
| WO2025057272A1 (ja) | 光変調器集積光源及びその製造方法 |