JP2000049560A - Crystal oscillator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a crystal oscillator which is economically very inexpensive and also whose oscillation characteristic does not fluctuate even if it is surface mounted on a printed circuit board. SOLUTION: This crystal oscillator is configured by forming a cavity part 19 on which an IC chip 4 is arranged on one principal plane of a housing-shaped ceramic container and housing a crystal resonator in a space area surrounded with a seal ring and a metallic cover on the other principal plane and monitor electrodes 15a and 15b which detect the oscillation characteristics of the crystal resonator are arranged on the bottom of the part 19 and also under the chip 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface mountable crystal oscillator used for mobile communication equipment and the like.

[0002]

2. Description of the Related Art Conventionally, a crystal oscillator comprises an IC chip in which all or a part of a crystal oscillator and an oscillation circuit are integrated, and various electronic components which cannot be integrated in the IC chip as required. It had been.

In such a crystal oscillator, structures shown in FIGS. 7 and 8 have already been proposed as a structure for surface mounting on a printed wiring board via reflow soldering or the like.

The crystal oscillator 70 includes a crystal oscillator 75, an IC
A ceramic container 71 containing a chip 76 and the like inside;
And a metal lid 72 for sealing the opening of the ceramic container 71 by seam welding.

[0005] The ceramic container 71 includes, for example, a first ceramic layer 71a and a second ceramic layer 71 from the lid side.
b, third ceramic layer 71c, fourth ceramic layer 7
1d.

The first ceramic layer 71 a is formed in a ring shape, and mainly has a cavity 73 for accommodating the crystal unit 75.
And a sealing conductor film for fixing the seal ring 77 is formed around the upper surface opening.

The second ceramic layer 71b is formed in a ring shape and mainly has a cavity 7 for accommodating an IC chip 76 and the like.
4, a crystal resonator 75 is arranged on the upper surface thereof, and crystal resonator pads 78, 78 to which the vibration electrodes of the crystal resonator 75 are connected are formed.

The third ceramic layer 71c has a substantially flat plate shape, forms a bottom surface of the cavity 74, and has
An IC pad 79... On which the chip 76 is arranged and electrically connected to the IC chip 76 is formed.

The fourth ceramic layer 71d has a substantially flat plate shape with a through hole or the like formed therein, and mainly serves as a leg of the ceramic container. On the lower surface of the fourth ceramic layer 71d, a conductor film having a substantially ground potential is applied.

A power supply voltage terminal, a ground terminal, an oscillation output terminal and the like of the crystal oscillator 70 are distributed to respective terminal electrodes formed at four corners of the container.

On the upper surface of the third ceramic layer 71c, a wiring pattern constituting a predetermined oscillation circuit, IC pads 79, etc. are formed.
Crystal oscillator frequency monitor electrodes 80 and 80 are formed on the lower surface of the third ceramic layer 71c exposed from the through hole 1d, and a wiring pattern forming a predetermined oscillation circuit is formed on the upper surface side.

The crystal oscillator pads 78, 78 formed on the second ceramic layer 71b are connected to a crystal oscillator on the lower surface of the third ceramic layer 71c via a predetermined oscillation circuit on the upper surface of the third ceramic layer 71c. Slave frequency monitor electrode 80,
80.

In the quartz resonator 75, a vibrating electrode formed by vapor deposition of Ag or the like is formed on both main surfaces of the quartz substrate, and an extension electrode extending from each vibrating electrode is formed at one end. I have.

The IC chip 76 is made of silicon or the like, and has an input / output electrode made of aluminum on one main surface.

The metal lid 72 is made of the same material as the seal ring 77, for example, Kovar or phosphor bronze, and is tightly adhered to the seal ring 77 by seam welding or the like. The seam ring 77 is formed of a sealing conductor film made of a tungsten, molybdenum base layer, a Ni plating layer, an Au plating layer, or the like formed around the opening of the first ceramic layer 71a of the ceramic container 71, and a brazing material. It is firmly fixed through.

The crystal oscillator having such a structure is manufactured by the following steps.

First, a ceramic container 71 to which a seal ring 77 is fixed, a quartz oscillator 75, an IC chip 76, and the like are prepared.

Next, an IC chip 76 is mounted in the lower cavity 74 of the ceramic container 71. Specifically, the IC chip 76 is bonded and connected between the input / output pads of the IC chip 76 and the IC pads 79... In addition, A on the input / output pad of the IC chip 76
U bumps are formed and bonded to the IC pads 79... through ultrasonic fusion or conductive paste.

Next, a quartz oscillator 75 is mounted in the upper cavity 73 of the ceramic container 71. Specifically, the extraction electrodes of the crystal unit 75 are arranged on the crystal unit pads 78, 78 formed on the upper surface of the second ceramic layer 71b so as to fit therewith, and are electrically connected via an Ag-based conductive resin paste. Mechanically joined.

Next, a probe of a frequency measuring device is applied to the crystal oscillator frequency monitor electrodes 80, 80 exposed from the bottom side of the ceramic container 71, and the oscillation frequency of the crystal oscillator 75 mounted on the ceramic container 71 is measured. ,at the same time,
In order to correct the frequency deviation, if necessary, an adherend for frequency adjustment is formed on the surface of the vibrating electrode of the crystal resonator 75 by vapor deposition. Thereby, the oscillation frequency of the crystal unit 75 mounted on the ceramic container 71 can be set to the design value.

Next, in the case of an oscillator using a quartz oscillator, an indispensable frequency stabilizing step (annealing step) is performed. Specifically, the oscillator is left in an atmosphere of about 150 to 250 ° C. to stabilize the deposited film deposited on the vibrating electrode of the crystal unit 75.

Next, both cavities 73 and 74 are sealed with a metal lid 72. Specifically, the metal lid 72 is placed on the seal ring 77 on the upper surface of the ceramic container 71, and a welding current is applied between the metal lid 72 and the seal ring 77 to weld them together.

[0023]

In the above-described structure, the quartz oscillator 7 is provided in the substantially same cavity portions 73, 73.
5. An IC chip 76 is provided. For this reason, when a defective oscillation or the like occurs, the entire oscillator including the crystal resonator 75 and the IC chip 76 must be discarded.

In connection with the IC chip, an Al input / output electrode and an Au wire or an Au bump are joined to one main surface of the IC chip 76. Then, as described above, since the oscillator mounting step is performed later, a heating history of several hours at 200 ° C. or more is required in the annealing step for stabilizing the deposited film and the like. Due to this high-temperature heat treatment, a cargental void is generated on the connection surface between the Al input / output electrode of the IC chip and the Au wire (bump) joined thereto, due to a difference in the diffusion speed of Al and Au, and the connection strength is significantly deteriorated. In some cases.

In order to measure the oscillation frequency of the mounted crystal unit 75, the frequency is externally monitored.
Since the crystal oscillator frequency monitor electrodes 80, 80 exposed from the bottom side of the ceramic container 71 are formed,
When a crystal oscillator is surface-mounted on a printed circuit board,
A stray capacitance is generated between the crystal oscillator frequency monitor electrodes 80 and 80 and a predetermined wiring pattern on the printed wiring board. As a result, the extremely stable frequency characteristics after the frequency adjustment step and the annealing step change the stray capacitance.

The present invention has been made in view of the above-mentioned problems, and has as its object the purpose of being economically very inexpensive, and of achieving oscillation characteristics even when surface-mounted on a printed wiring board. It is to provide a crystal oscillator that does not fluctuate.

[0027]

According to the present invention, there is provided a semiconductor device comprising:
A quartz oscillator is arranged on the other main surface of the ceramic container having the cavity in which the C chip is arranged,
A quartz oscillator, wherein the quartz oscillator is hermetically sealed with a seal ring and a metal lid, wherein the quartz oscillator is connected to the quartz oscillator in an IC chip arrangement area on the bottom surface of the cavity. A crystal oscillator characterized in that a monitor electrode for detecting oscillation characteristics of a crystal resonator is formed.

[0028]

According to the present invention, a monitor electrode for measuring the oscillation characteristics of the crystal unit during the manufacturing process is formed on the bottom surface of the cavity in the area where the IC chip is arranged. Therefore, when the crystal oscillator is mounted on the printed circuit board, there is an IC chip whose chip is substantially at the ground potential between the wiring pattern on the printed circuit board and the monitor electrode. Does not generate stray capacitance. Thereby, the frequency stabilization step (thermal annealing step)
Since there is no element that can change the oscillation characteristics of the crystal resonator after performing the above, the oscillation characteristics do not change even if the surface mounting is performed on the printed wiring board.

Further, the water oscillator and the IC chip are separately arranged in spaces (cavities, housing areas) on different main surfaces of the ceramic container. Therefore, if the oscillation characteristics of the crystal unit are monitored and an oscillation failure occurs, the IC chip does not need to be mounted, and the cost is very low economically.

Further, since the IC chip can be arranged in the cavity portion of the ceramic container after the frequency adjustment and the annealing step of the crystal oscillator, the bonding interface between the Al electrode of the IC chip and the Au wire (bump) is provided. The Cargendall void phenomenon does not occur. Further, unnecessary heat history is not added to the IC chip. This also provides a crystal oscillator with stable characteristics.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a crystal oscillator according to the present invention will be described with reference to the drawings.

FIG. 1 is an external perspective view of a crystal oscillator according to the present invention, FIG. 2 is a cross-sectional view taken along line XX of FIG. 1, and FIG. 3 is a top view in a state where a metal cover is omitted. FIG. 4 is a bottom view. FIG. 5A is a wiring pattern diagram on the upper surface side of the second ceramic layer, FIG. 5B is a wiring pattern diagram on the lower surface side of the second ceramic layer, and FIG. It is a flowchart for explaining the method.

The crystal oscillator 10 of the present invention includes, for example, a ceramic container 1 having four ceramic layers laminated, a metal cover 2, a crystal oscillator 3, an IC chip 4, an electronic component element 5, an IC coating resin 6, And a seal ring 7.

The ceramic container 1 is composed of, for example, four alumina ceramic layers 1a to 1d. For example, the first ceramic layer from the upper surface side has a substantially planar shape, and a sealing conductor film for fixing the seal ring 7 is formed on the outer periphery of the surface. Also, the first
The mounting member 11 of the crystal unit 3 is formed in the accommodation region Y of the ceramic layer 1a fixed to the seal ring 7. The mounting member 11 is a base such as a ceramic,
A crystal resonator electrode pad 12 is formed on the surface. When the end portion of the crystal unit 3 is disposed, the mounting member 11 is located between the upper surface of the crystal unit 3 and the metal cover 2 and between the lower surface of the crystal unit 3 and the surface of the first ceramic layer 1a. A predetermined space is formed between them. In the drawing, two mounting members 11 (11a, 11b) are formed.

The second ceramic layer 1b has a substantially planar shape, and a predetermined wiring pattern as shown in FIG. 6 is arranged between the second ceramic layer 1b and the first ceramic layer 1a. Also, the second
On the lower surface side of the ceramic layer 1b, a predetermined wiring pattern shown in FIG. 7, a mounting electrode pad 13 of the IC chip 4, a mounting electrode pad 14 of the electronic component element 5, a monitor electrode 15a for measuring a crystal oscillator frequency. , 15b are formed.

The third ceramic layer 1c has a substantially ring shape. Further, the fourth ceramic layer 1d has a substantially ring shape having an opening shape larger than the opening shape of the third ceramic layer 1c. In addition, a conductor film 16 having a ground potential is formed on the lower surface of the fourth ceramic layer 1d.

The first ceramic layer 1 a and the second ceramic layer 1 b are provided on the mounting electrode pads 1 of the electronic component element 5.
, Via the predetermined wiring pattern from the monitor electrode 1
Via-hole conductors 17a and 18a are formed to electrically connect 5a and 15b.

The sealing conductor film, the predetermined wiring pattern, the mounting electrode pads 13 and 14, the monitor electrodes 15a and 1
5b, the conductor film 16 at the ground potential is made of a metallized conductor film such as molybdenum or tungsten.
A Ni plating layer and a flash plating layer of Au are formed on the conductor film exposed from the surface of the ceramic layer 1a, the lower surface of the second ceramic layer 1B, and the lower surface of the fourth ceramic layer 1d. The via-hole conductors 17a, 17b,
18a and 18b are substantially filled with a metal material such as molybdenum or tungsten.

The four corners of the ceramic container 1 have terminal portions 10a to 10 made of the above-mentioned conductive film and plating layer formed on the concave portion extending in the thickness direction and the inner wall of the concave portion.
0d is formed. For example, this terminal electrode is connected to a bias voltage and a ground voltage of a predetermined oscillation circuit, and is a terminal for outputting an oscillation output signal.

Such a ceramic container 1 is, for example,
A through hole serving as a via hole conductor or a through hole serving as a ring is formed in the green sheet serving as the first to fourth ceramic layers, and a conductive paste is filled in the through hole serving as the via hole conductor of each green sheet. Accordingly, a conductive film to be used as a wiring pattern or the like may be printed on one main surface of the green sheet using a conductive paste, such green sheets may be laminated, integrally fired, and plated.

The sealing conductor film 1 on the surface of the ceramic container 1
On 0x, a seal ring 7 made of, for example, Kovar or phosphor bronze is fixed by brazing or the like.

The storage area Y surrounded by the seal ring 7
The crystal oscillator 2 is joined on the mounting members 11a and 11b.

In order to enable oscillation in a predetermined vibration mode, the crystal resonator 2 is formed by forming a strip-shaped crystal substrate 20 cut into predetermined cuts and depositing Ag or the like on both main surfaces of the crystal substrate 20. Vibrating electrodes 21 and 22 and lead electrodes 21 a and 22 a extending from the pair of vibrating electrodes 21 and 22 to one end of the quartz substrate 20. After mounting the quartz oscillator 2 on the ceramic container 1, a conductor for frequency adjustment is deposited on the vibrating electrode as necessary.

The above-described quartz oscillator 2 is a ceramic container 1
Are mounted and joined to the mounting members 11a and 11b. Specifically, the crystal oscillator electrode pads 12a and 12b of the mounting members 11a and 11b and the extraction electrode 21 of the crystal oscillator 2
a and 22a are aligned with each other, and these portions are joined by conductive resin adhesive members 23a and 23b containing a powder such as Ag.

The metal lid 3 is made of the same material as the seal ring 7, for example, Kovar or phosphor bronze, and its outer peripheral portion is integrated with the seal ring 7 by seam welding. As a result, the crystal resonator 2 is hermetically sealed in the space X between the surface of the ceramic container 1, the seal ring 7 and the metal lid 3.

The IC chip 4 is configured by integrating an inverter and the like constituting an oscillation circuit. In particular,
The silicon member 41 is formed by injecting a predetermined doping material to form a predetermined circuit. On one main surface of the silicon member 41, an input / output electrode 42 made of aluminum for wire bonding or bump bonding is formed.

Such an IC chip 4 is arranged in a cavity 19 (formed by the third and fourth ceramic layers 1c and 1d) formed on the lower surface side of the ceramic container 1. For example, it is bonded to the mounting electrode pad 13 formed on the lower surface side of the second ceramic layer 1b corresponding to the bottom surface of the cavity portion 19. In addition, bonding is IC
Au bumps 43 are formed on the input / output electrodes 42 of the chip 4 and the Au bumps 43 and the mounting electrode pads 13 are achieved by fusion. Alternatively, the IC chip 4 may be bonded to the lower surface of the second ceramic layer 1b and connected to the input / output electrode 42, the mounting electrode pad 13, and the Au wire.

The electronic component element 5 is, for example, a resistor or a large-capacity capacitor which is difficult to be integrated in an oscillation circuit, and is a bottom surface of the cavity portion 19 (a lower surface of the second ceramic layer 1b).
Is electrically connected to the mounting electrode pad 14 formed through a solder or the like, and is mechanically bonded. If a resistor, a large-capacity capacitor, or the like, which is difficult to integrate, is mounted on an external printed circuit board, the crystal oscillator can be omitted.

The IC coating resin 6 is formed by filling and curing the cavity 19 in which the IC chip 4 and the electronic component element 5 are arranged so that at least the IC chip 4 is completely covered. Examples of the IC coating resin 6 include a resin such as an epoxy resin and a silicon resin. The IC coating resin 6 is filled in the cavity 19.
In order to arrange the ceramic container 1 on the printed wiring board, it is important that the ceramic container 1 does not protrude from the cavity 19.

In the crystal oscillator 10 having such a structure, the monitor electrode 1 for measuring the frequency characteristics of the crystal unit 2
Reference numerals 5a and 15b denote bottom surfaces of the cavity 19 on which the IC chip 4 is mounted, and are formed below the IC chip 4.
That is, in the plan view on the back surface side of the ceramic container 1 in FIG. 4, monitor electrodes 15a and 15b indicated by dashed lines are arranged in the mounting area of the IC chip 4 in the mounting area of the IC chip 4 indicated by the dotted line. I have.

Next, a method of manufacturing the above-described crystal oscillator will be described with reference to FIG.
It will be described based on.

First, as shown in FIG. 6A, a ceramic container 1 on which a mounting member 11, various electrodes (conductors, electrode pads, via-hole conductors) 12 to 18 are formed, and a seal ring 7 is attached. Then, a quartz oscillator 2, a metal cover 3, for example, an IC chip 4 on which an Au bump 43 is adhered, and an electronic component element 5 are prepared.

Next, as shown in FIG. 6B, the crystal oscillator 2 is mounted. Specifically, a conductive paste is applied to the mounting members 11 and 11 in a region surrounded by the seal ring 7, and thereafter, one end of the crystal unit 2, that is, the extraction electrode 22 a of the crystal unit 2, 22b, the mounting members 11, 1
The first crystal resonator electrode pads 12a and 12b are aligned with each other.
A conductive paste is applied on 2a and 22b and mounted by a predetermined curing method (thermal curing or ultraviolet curing).

Thus, the vibrating pole 2 of the crystal unit 2
1 and 22 are led out to the monitor electrodes 15a and 15b exposed on the bottom surface of the cavity portion 19 of the ceramic container 1 via the crystal resonator electrode pads 12a and 12b and the via-hole conductors 17a, 17b, 18a and 18b. Become.

Next, as shown in FIG. 6C, the frequency of the crystal unit 2 is adjusted. Specifically, the measurement terminals (probes) of the frequency measuring device are brought into contact with the monitor electrodes 15a and 15b exposed on the bottom surface of the cavity portion 19 of the ceramic container 1, and the quartz oscillator 2 is oscillated at a predetermined frequency. Measure. Based on the result, a metal such as silver is vapor-deposited on the vibrating electrode 21 of the crystal resonator 2 from the upper surface side of the ceramic container 1, and the oscillation frequency is set to a predetermined value while substantially weighting the vibrating electrode 21. To Next, FIG.
(D), the frequency of the crystal unit 2 hermetically sealed with the metal lid 3 is stabilized. Specifically, the quartz resonator 2 is sealed, and the entire ceramic
Heat treatment at ~ 250 ° C. This heat treatment is generally called thermal aging. Due to this thermal aging, the vibrating electrode 21
This stabilizes the frequency-adjusted deposit deposited on the top and volatilizes impurities such as a solvent contained in the conductive paste and the like.

Next, as shown in FIG. 6E, the metal lid 3 is sealed. Specifically, the metal cover 3 is placed on the seal ring 7 in a predetermined atmosphere in the region X, and the capacity current is applied around the metal cover 3 by a roller electrode (not shown) for seam welding. Are applied to each other to move them in contact with each other to weld them.

Next, as shown in FIG. 6F, the electronic component element 5 is mounted. Specifically, A is applied to the electrode pad 14.
Then, a conductive resin paste containing g powder or the like is applied, and the electronic component element 5 is placed and cured. If it is not necessary to use the electronic component element 5, this step can be omitted.

Next, the IC chip 4 is mounted as shown in FIG. Specifically, an IC chip 4 in which an Au bump 43 is formed on an aluminum input / output electrode 42
Are positioned and mounted such that the mounting electrode pads 13 arranged on the bottom surface of the cavity portion 19 of the ceramic container 1 and the Au bumps 43 are in contact with each other, and thereafter, ultrasonic waves or the like are applied to the IC chip 4 to fuse them together. To wear. Regarding the mounting direction of the IC chip 4, the IC chip 4 is bonded to the bottom surface of the cavity portion 19 with an insulating resin or the like, and the aluminum input / output electrode 42 is connected to the mounting mounting electrode pad 13 with an Au wire. I do not care.

Thus, by mounting the IC chip 4,
The monitor electrodes 15a and 15b are concealed by the IC chip 4 when viewed from the back side of the ceramic container 1.
When connection is made using the Au bump 43, a gap corresponding to the height of the bump is formed between the cavity 19 and the IC chip 4, so that the monitor electrode 1
5a, 15b and IC chip 4 do not short-circuit.

Next, as shown in FIG. 6H, the IC chip 4 is covered with a resin or the like. Specifically, the IC coating resin 6 disposed in the cavity 19 and the electronic component element 5 as necessary are filled with a thermosetting or ultraviolet-curing resin resin such as an epoxy resin or a silicon resin. Curing is performed by a predetermined curing method.

In the crystal oscillator manufactured by the above-described manufacturing method, monitor electrodes 15 a and 15 b for measuring the frequency characteristics in a mounted state of the crystal resonator 2 are formed on the bottom surface of the cavity 19. Therefore, since the IC chip 4 is exposed before and after mounting, the frequency can be measured from the back side of the ceramic container 1 using the monitor electrodes 15a and 15b, and the upper surface side of the ceramic container 1 can be measured. Thus, vapor deposition for frequency adjustment can be performed.

The monitor electrodes 15a and 15b are eventually covered by the IC chip 4. Generally, the silicon chip 41 of the IC chip 4 is at the ground potential. That is, a structure having a ground potential exists outside the monitor electrodes 15a and 15b.

Therefore, the predetermined wiring of the printed wiring board
When this crystal oscillator 10 is mounted, predetermined wiring on a printed wiring board (particularly, wiring passing through the lower surface of the crystal oscillator 10)
Unnecessary stray capacitance does not occur between the monitor electrodes 15a and 15b.

Therefore, the load capacity of the crystal unit 2 does not fluctuate, and a very stable operation of the crystal unit 2 can be ensured.

Further, since the thermal aging process for stabilizing the frequency of the crystal unit 2 is performed before the mounting of the IC chip 4 in the manufacturing process, the number of heat histories added to the IC chip 4 decreases. In addition, the aluminum input / output electrode 42 of the IC chip 4 and the connecting member (Au bump 4
No Au-Al eutectic reaction (Cargendall void phenomenon) occurs at the connection portion with the Au wire or Au wire. That is, even if the annealing process is performed under the condition of focusing only on stabilizing the frequency of the crystal resonator 2, the operation of the IC chip 4 and the connection failure do not occur at all.

[0066]

As described above, according to the present invention, the monitor electrode for measuring the crystal oscillator frequency is exposed from the main surface (bottom surface of the cavity) opposite to the surface of the ceramic container in which the crystal oscillator is arranged. Therefore, measurement and adjustment operations for adjusting the frequency of the crystal unit can be performed very easily.

Further, the crystal unit and the IC chip are arranged separately on the front side and the back side of the ceramic container, and during the frequency stabilization step (thermal annealing step) of the crystal unit,
Since the structure can be performed in a state where the IC chip is not attached to the ceramic container, it is possible to prevent a malfunction due to a heat history of the IC chip and a failure of a connection portion. In addition, since defective products are discarded when the crystal resonator is mounted, the manufacturing method is economically very inexpensive as a whole.

Thus, a crystal oscillator whose oscillation characteristics do not fluctuate even when surface-mounted on a printed wiring board is obtained.

[Brief description of the drawings]

FIG. 1 is an external perspective view of a crystal oscillator according to the present invention.

FIG. 2 is a sectional view taken along line XX shown in FIG.

FIG. 3 is a top view of the crystal oscillator of the present invention in a state where a metal cover is omitted.

FIG. 4 is a bottom view of the crystal oscillator of the present invention.

5A and 5B are diagrams illustrating a wiring structure of the crystal oscillator of the present invention, wherein FIG. 5A is a wiring pattern diagram on the upper surface side of a second ceramic layer, and FIG. 5B is a wiring pattern diagram on a lower surface side of the second ceramic layer. It is.

FIG. 6 is a process diagram illustrating a method for manufacturing a crystal oscillator according to the present invention.

FIG. 7 is an external perspective view of a conventional crystal oscillator.

FIG. 8 is a sectional view of a conventional crystal oscillator.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Ceramic container 2 ... Crystal oscillator 3 ... Metal lid 4 ... IC chip 5 ... Electronic component element 6 ... Coating resin 7 ... Seal ring 15a, 15b ...・ Monitor electrode

Claims (1)

[Claims] A quartz resonator is disposed on the other main surface of a ceramic container having a cavity in which an IC chip is disposed on one main surface, and the crystal resonator is hermetically sealed by a seal ring and a metal lid. A monitor electrode that is connected to the crystal oscillator and detects oscillation characteristics of the crystal oscillator, in a region where an IC chip is disposed at a bottom surface of the cavity portion. A crystal oscillator characterized by the following.