JP2000049372A - Insulation substrate for solar battery and its manufacture - Google Patents
Insulation substrate for solar battery and its manufactureInfo
- Publication number
- JP2000049372A JP2000049372A JP10215773A JP21577398A JP2000049372A JP 2000049372 A JP2000049372 A JP 2000049372A JP 10215773 A JP10215773 A JP 10215773A JP 21577398 A JP21577398 A JP 21577398A JP 2000049372 A JP2000049372 A JP 2000049372A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- solar cell
- metal plate
- insulating
- surface shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、太陽電池用絶縁基
板及びその製造方法に関し、より詳細には、金属板の表
面上に絶縁層を有する太陽電池用絶縁基板及びその製造
方法に関する技術分野に属する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulating substrate for a solar cell and a method of manufacturing the same, and more particularly, to a technical field of an insulating substrate for a solar cell having an insulating layer on a surface of a metal plate and a method of manufacturing the same. Belong.
【0002】[0002]
【従来の技術】電子材料基板としては、電気絶縁性が要
求される用途においてはガラスよりなる基板(ガラス基
板)が使用されている場合があるが、割れやすいことか
ら取り扱いに充分な注意が必要であると共に、フレキシ
ブル性に欠けることから使用範囲が限定されていた。特
に太陽電池(ソーラーパネル)等の大型のものにもガラ
ス基板は使用されており、その問題が顕著である。2. Description of the Related Art As an electronic material substrate, a substrate made of glass (glass substrate) may be used in applications requiring electrical insulation, but care must be taken when handling the substrate because it is easily broken. In addition, the use range was limited due to lack of flexibility. In particular, glass substrates are also used for large-sized ones such as solar cells (solar panels), and the problem is remarkable.
【0003】最近では住宅等の建造物用の電力供給源と
して太陽電池が注目を集めており、充分な供給電力を確
保する上で太陽電池の大型化が不可欠であり、太陽電池
の大面積化を図る上で基板の軽量化が望まれている。し
かしながら、かかる軽量化を目的として、ガラス基板を
薄くすると一層割れやすくなってしまう。かかる事情か
ら、割れ難くフレキシブルであり、しかもガラス基板よ
りも軽量化を図ることのできる基板材料の開発が要望さ
れている。Recently, solar cells have attracted attention as a power supply source for buildings such as houses, and in order to secure sufficient power supply, it is essential to increase the size of the solar cells. In order to achieve this, it is desired to reduce the weight of the substrate. However, if the thickness of the glass substrate is reduced for the purpose of reducing the weight, the glass substrate is more easily broken. Under such circumstances, there is a demand for the development of a substrate material which is hard to break and is flexible, and which can be lighter than a glass substrate.
【0004】金属材料は薄くしても割れ難いが、導電体
であるため、ガラスに替わる絶縁基板材料としては殆ど
検討されていない。尚、絶縁処理を施したプリント配線
基板用金属板等は提案されている(特開平5-191001号公
報)が、これらは太陽電池用基板としての特性を考慮し
た面積、絶縁性、表面形状ではなく、太陽電池用基板と
しての必要特性を満たすものではなく、太陽電池用基板
として適用したとしても充分な性能は得られない。[0004] Although a metal material is hard to be broken even when it is thin, it is hardly considered as an insulating substrate material replacing glass because it is a conductor. Insulated metal plates for printed wiring boards and the like have been proposed (Japanese Patent Application Laid-Open No. 5-191001). However, these are not considered in terms of area, insulating property, and surface shape in consideration of the characteristics as solar cell substrates. In addition, it does not satisfy the required characteristics as a solar cell substrate, and sufficient performance cannot be obtained even when applied as a solar cell substrate.
【0005】一方、太陽電池の基板表面が微細な凹凸状
(テクスチャ構造)であると、光の散乱が生じるため太
陽電池の光の利用効率が増大することが知られている
(例えば、特開平8-18084 号公報)。ガラス基板におい
ても結晶方向性膜を形成すること等によりテクスチャ構
造としている。尚、金属板表面に微細な凹凸を付与する
技術は平板印刷版の感光層との密着性向上手段として電
気化学溶解法等が知られている(特開平10-16419号、特
開平8-179496号公報)が、この技術は光の利用効率の増
大を図るためのものではなく、金属板と感光層との密着
性の向上を図ることを目的とするものであり、この技術
を単に太陽電池用基板に適用したとしても光の利用効率
に充分な効果は得られない。On the other hand, it is known that when the substrate surface of a solar cell has a fine unevenness (texture structure), light is scattered and the light utilization efficiency of the solar cell is increased (for example, see Japanese Patent Application Laid-Open Publication No. 8-18084). A texture structure is also formed on a glass substrate by forming a crystal directional film. As a technique for providing fine irregularities on the surface of a metal plate, an electrochemical dissolution method or the like is known as a means for improving adhesion to a photosensitive layer of a lithographic printing plate (JP-A-10-16419, JP-A-8-179496). However, this technology is not intended to increase the light use efficiency, but to improve the adhesion between the metal plate and the photosensitive layer. Even if it is applied to a substrate for use, a sufficient effect on light use efficiency cannot be obtained.
【0006】[0006]
【発明が解決しようとする課題】本発明はこの様な事情
に着目してなされたものであって、その目的は、割れ難
く、可撓性を有し、ガラス基板よりも軽量化を図ること
ができ、しかも太陽電池の光の利用効率の増大が図れる
太陽電池用絶縁基板及びその製造方法を提供しようとす
るものである。SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and an object of the present invention is to make it hard to break, to have flexibility, and to reduce the weight more than a glass substrate. It is an object of the present invention to provide a solar cell insulating substrate and a method for manufacturing the same, which can increase the light use efficiency of the solar cell.
【0007】[0007]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明に係る太陽電池用絶縁基板及びその製造方
法は、請求項1〜6記載の太陽電池用絶縁基板、請求項
7〜8記載の太陽電池用絶縁基板の製造方法としてお
り、それは次のような構成としたものである。In order to achieve the above object, an insulating substrate for a solar cell and a method of manufacturing the same according to the present invention are provided. 8. The method for manufacturing an insulating substrate for a solar cell according to Item 8, which has the following configuration.
【0008】即ち、請求項1記載の太陽電池用絶縁基板
は、金属板の表面上に絶縁層を有する太陽電池用絶縁基
板であって、前記絶縁層の厚みが0.5μm 以上である
と共に、前記絶縁層の表面粗度が中心線平均粗さ(R
a)で0.5〜200μm であることを特徴とする太陽
電池用絶縁基板である(第1発明)。That is, the insulating substrate for a solar cell according to the first aspect is a solar cell insulating substrate having an insulating layer on a surface of a metal plate, wherein the thickness of the insulating layer is 0.5 μm or more, The surface roughness of the insulating layer is the center line average roughness (R
a) An insulating substrate for a solar cell, wherein the thickness is 0.5 to 200 μm in (a) (first invention).
【0009】請求項2記載の太陽電池用絶縁基板は、前
記絶縁層の表面の凹凸部傾斜面の傾斜角度が80度以下
であると共に、この傾斜面の中で傾斜角度:30度以上
80度以下の傾斜面が占める割合が投影面積比で5%以
上である請求項1記載の太陽電池用絶縁基板である(第
2発明)。According to a second aspect of the present invention, in the insulating substrate for a solar cell, the inclined surface of the uneven portion on the surface of the insulating layer has an inclination angle of 80 degrees or less, and the inclination angle in the inclined surface is 30 degrees or more and 80 degrees. 2. The solar cell insulating substrate according to claim 1, wherein a ratio of the following inclined surface is 5% or more in a projected area ratio (second invention). 3.
【0010】請求項3記載の太陽電池用絶縁基板は、前
記金属板がアルミニウムまたはアルミニウム合金からな
る請求項1又は2記載の太陽電池用絶縁基板である(第
3発明)。請求項4記載の太陽電池用絶縁基板は、前記
絶縁層が、前記金属板の陽極酸化処理によって形成され
た陽極酸化層を含む層からなる請求項3記載の太陽電池
用絶縁基板である(第4発明)。請求項5記載の太陽電
池用絶縁基板は、前記陽極酸化処理前の金属板が、酸あ
るいはアルカリ溶液を用いて表面形状調整されている請
求項4記載の太陽電池用絶縁基板である(第5発明)。
請求項6記載の太陽電池用絶縁基板は、前記陽極酸化処
理前の金属板が、濃度0.1質量%以上の塩酸水溶液、
濃度0.1質量%以上の硝酸水溶液、或いは、これらの
混合水溶液中において電流密度1〜300A/dm2 で交
流電解されて表面形状調整されている請求項4記載の太
陽電池用絶縁基板である(第6発明)。A third aspect of the present invention is the solar cell insulating substrate according to the first or second aspect, wherein the metal plate is made of aluminum or an aluminum alloy. The solar cell insulating substrate according to claim 4 is the solar cell insulating substrate according to claim 3, wherein the insulating layer is a layer including an anodized layer formed by anodizing the metal plate. 4 inventions). According to a fifth aspect of the present invention, there is provided the insulating substrate for a solar cell according to the fourth aspect, wherein the surface shape of the metal plate before the anodizing treatment is adjusted using an acid or alkali solution. invention).
The insulating substrate for a solar cell according to claim 6, wherein the metal plate before the anodizing treatment is a hydrochloric acid aqueous solution having a concentration of 0.1% by mass or more;
Concentration of 0.1 wt% or more of nitric acid aqueous solution, or is a solar cell insulating substrate of alternating current electrolysis by the surface shape adjusted to have claim 4, wherein a current density 1~300A / dm 2 in a mixed aqueous solution (Sixth invention).
【0011】請求項7記載の太陽電池用絶縁基板の製造
方法は、金属板を酸あるいはアルカリ溶液を用いて表面
形状を調整した後、この金属板に絶縁層を形成すること
を特徴とする太陽電池用絶縁基板の製造方法である(第
7発明)。請求項8記載の太陽電池用絶縁基板の製造方
法は、金属板を、濃度0.1質量%以上の塩酸水溶液、
濃度0.1質量%以上の硝酸水溶液、或いは、これらの
混合水溶液中において電流密度1〜300A/dm2 で交
流電解して表面形状を調整した後、この金属板に絶縁層
を形成することを特徴とする太陽電池用絶縁基板の製造
方法である(第8発明)。According to a seventh aspect of the present invention, there is provided a method for manufacturing an insulating substrate for a solar cell, comprising: adjusting a surface shape of a metal plate using an acid or alkali solution; and forming an insulating layer on the metal plate. This is a method for manufacturing an insulating substrate for a battery (a seventh invention). The method for manufacturing an insulating substrate for a solar cell according to claim 8, wherein the metal plate is formed by adding a hydrochloric acid aqueous solution having a concentration of 0.1% by mass or more;
After adjusting the surface shape by alternating current electrolysis in a nitric acid aqueous solution having a concentration of 0.1% by mass or more or a mixed aqueous solution thereof at a current density of 1 to 300 A / dm 2 , it is necessary to form an insulating layer on this metal plate. This is a method for manufacturing a solar cell insulating substrate, which is a feature of the present invention (eighth invention).
【0012】尚、上記質量%は重量%のことである。以
下、質量%(重量%)を%という。[0012] The above-mentioned mass% is weight%. Hereinafter, mass% (% by weight) is referred to as%.
【0013】[0013]
【発明の実施の形態】本発明は、例えば次のような形態
で実施される。Al(アルミニウム)合金板を濃度0.1 %
以上の塩酸水溶液又は硝酸水溶液、或いは、これらの混
合水溶液、例えば5%塩酸水溶液中において電流密度1
〜300A/dm2で交流電解してAl合金板の表面をRa(中心線
平均粗さ):0.5 〜200 μm の表面粗度を有する表面形
状に調整する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is embodied, for example, in the following modes. 0.1% concentration of Al (aluminum) alloy plate
A current density of 1 in the above-mentioned aqueous hydrochloric acid solution or aqueous nitric acid solution, or a mixed aqueous solution thereof, for example, a 5% aqueous hydrochloric acid solution.
The surface of the Al alloy plate is adjusted to a surface shape having a surface roughness of Ra (center line average roughness): 0.5 to 200 μm by alternating current electrolysis at 300 A / dm 2 .
【0014】上記表面形状調整後のAl合金板の表面に、
厚み0.5 μm 以上の絶縁層を形成する。このとき、絶縁
層の表面粗度がRa:0.5 〜200 μm となるようにする。
例えば、上記表面形状調整後のAl合金板を陽極酸化処理
して厚み10μm の陽極酸化皮膜(層)を形成させる。そ
うすると、厚み10μm の陽極酸化層よりなると共にRa:
0.5 〜200 μm の表面粗度を有する絶縁層が形成され
る。On the surface of the Al alloy plate after the surface shape adjustment,
An insulating layer having a thickness of 0.5 μm or more is formed. At this time, the surface roughness of the insulating layer is adjusted to Ra: 0.5 to 200 μm.
For example, the Al alloy plate after the surface shape adjustment is anodized to form an anodized film (layer) having a thickness of 10 μm. Then, an anodized layer with a thickness of 10 μm is formed and Ra:
An insulating layer having a surface roughness of 0.5 to 200 μm is formed.
【0015】このような形態で本発明に係る太陽電池用
絶縁基板の製造方法が実施され、そして本発明に係る太
陽電池用絶縁基板が得られる。In such a form, the method for manufacturing a solar cell insulating substrate according to the present invention is carried out, and the solar cell insulating substrate according to the present invention is obtained.
【0016】上記表面形状調整の際に、表面の凹凸部傾
斜面の傾斜角度が80度以下であり、且つ、傾斜角度:30
度以上80度以下の傾斜面が占める割合が投影面積比で5
%以上であるようにしておくと、かかる形状の表面形状
を有する絶縁層を形成させることができ、従って、本第
2発明に係る太陽電池用絶縁基板が得られる。In the above-mentioned surface shape adjustment, the inclination angle of the inclined surface of the uneven portion on the surface is 80 degrees or less, and the inclination angle is 30 degrees.
The ratio of the inclined surface not less than 80 degrees and not more than 80 degrees is 5 in projected area ratio.
%, The insulating layer having such a surface shape can be formed, and thus the solar cell insulating substrate according to the second invention is obtained.
【0017】以下、本発明について主にその作用効果を
説明する。Hereinafter, the function and effect of the present invention will be mainly described.
【0018】金属板はガラスに比較して極めて割れ難
く、可撓性に優れていることから、金属板に電気絶縁性
を付与すれば、割れ難く、可撓性を有し、ガラス基板よ
りも軽量化が図れる太陽電池用絶縁基板となる。かかる
金属板への電気絶縁性の付与は金属板表面に絶縁層を有
するようにすることにより実現し得る。従って、金属板
の表面上に絶縁層を有するように構成した太陽電池用絶
縁基板は、基本的に割れ難く、可撓性を有し、ガラス基
板よりも軽量化を図ることができる太陽電池用絶縁基板
である。Since a metal plate is extremely hard to break and excellent in flexibility as compared with glass, if the metal plate is provided with electrical insulation, it is hard to break, has flexibility, and is more flexible than a glass substrate. It is a solar cell insulating substrate that can be reduced in weight. The provision of electrical insulation to such a metal plate can be realized by providing an insulating layer on the surface of the metal plate. Therefore, an insulating substrate for a solar cell configured to have an insulating layer on the surface of a metal plate is basically hard to be broken, has flexibility, and can achieve a lighter weight than a glass substrate. It is an insulating substrate.
【0019】更に、かかる太陽電池用絶縁基板の表面
(即ち、絶縁層の表面)をテクスチャ構造の表面形状に
すれば、その表面形状によっては太陽電池の光の利用効
率(以降、光利用効率という)の増大が図れる太陽電池
用絶縁基板となる。Furthermore, if the surface of the insulating substrate for a solar cell (that is, the surface of the insulating layer) has a textured surface shape, depending on the surface shape, the light utilization efficiency of the solar cell (hereinafter referred to as light utilization efficiency). ) Can be obtained.
【0020】そこで、本発明者らは、金属板の表面上に
絶縁層を有する太陽電池用絶縁基板であって金属板の表
面形状、絶縁層の厚み及び表面形状等が種々異なるもの
を作製し、それらについて主に光利用効率を調べた。そ
の結果、絶縁層の表面粗度がRaで0.5 〜200 μm である
場合に光利用効率が高くなるという知見を得た。又、電
気絶縁性の確保のために絶縁層の厚みを0.5 μm 以上と
する必要があることがわかった。Therefore, the present inventors have prepared an insulating substrate for a solar cell having an insulating layer on the surface of a metal plate, which has various shapes such as the surface shape of the metal plate, the thickness and the surface shape of the insulating layer, and the like. In addition, the light utilization efficiency was mainly examined for them. As a result, it has been found that the light use efficiency increases when the surface roughness of the insulating layer is 0.5 to 200 μm in Ra. It was also found that the thickness of the insulating layer had to be 0.5 μm or more in order to ensure electrical insulation.
【0021】特には、Al合金の水溶液中の溶解現象に着
目し、化学溶解あるいは電気化学溶解によりAl合金板の
表面形状をRaで0.5 〜200 μm となるように調整した
後、この表面にこの表面形状を維持した絶縁層〔即ち、
このAl合金板表面形状と同様の表面形状(Ra:0.5 〜20
0 μm )を有する絶縁層〕を厚み0.5 μm 以上で形成さ
せたもの、例えば、上記表面形状調整後のAl合金板を陽
極酸化処理して厚み0.5μm 以上の陽極酸化層よりなる
と共にRa0.5 〜200 μm の表面粗度を有する絶縁層を形
成させたものを、太陽電池用基板として用いると、電気
絶縁性を確保し得ると共に光利用効率を高め得ることを
見出した。In particular, paying attention to the dissolution phenomenon of the Al alloy in the aqueous solution, the surface shape of the Al alloy plate is adjusted by Ra to 0.5 to 200 μm by chemical dissolution or electrochemical dissolution, Insulating layer maintaining the surface shape (ie,
Surface shape similar to this Al alloy plate surface shape (Ra: 0.5 to 20
An insulating layer having a thickness of 0.5 μm) or more, for example, an anodized aluminum alloy plate after the surface shape adjustment is performed to form an anodized layer having a thickness of 0.5 μm or more. It has been found that, when an insulating layer having a surface roughness of up to 200 μm is used as a solar cell substrate, electrical insulation can be ensured and light use efficiency can be increased.
【0022】本発明に係る太陽電池用絶縁基板は以上の
ような知見に基づき完成されたものであり、前述のよう
な構成の太陽電池用絶縁基板としている。即ち、本発明
に係る太陽電池用絶縁基板は、金属板の表面上に絶縁層
を有する太陽電池用絶縁基板であって、前記絶縁層の厚
みが0.5 μm 以上であると共に、前記絶縁層の表面粗度
がRaで0.5 〜200 μm であることを特徴とするものとし
ている。従って、本発明に係る太陽電池用絶縁基板は、
電気絶縁性を有すると共に、割れ難く、可撓性を有し、
ガラス基板よりも軽量化を図ることができ、しかも光利
用効率(太陽電池の光の利用効率)の増大を図ることが
できる。尚、光利用効率が増大すると、短絡電流値の増
加がはかれ、ひいては太陽電池のセル変換効率が向上
し、発電効率が向上する。短絡電流値は電池から取り出
せる電荷の量であり、電池特性の指標の一つである。The solar cell insulating substrate according to the present invention has been completed on the basis of the above findings, and is a solar cell insulating substrate having the above-described structure. That is, the insulating substrate for a solar cell according to the present invention is an insulating substrate for a solar cell having an insulating layer on the surface of a metal plate, wherein the thickness of the insulating layer is 0.5 μm or more and the surface of the insulating layer It is characterized in that the roughness is 0.5 to 200 μm in Ra. Therefore, the solar cell insulating substrate according to the present invention,
Has electrical insulation, is hard to crack, has flexibility,
Lighter weight than a glass substrate can be achieved, and light utilization efficiency (light utilization efficiency of a solar cell) can be increased. When the light use efficiency is increased, the short-circuit current value is increased, and as a result, the cell conversion efficiency of the solar cell is improved, and the power generation efficiency is improved. The short-circuit current value is the amount of charge that can be taken out of the battery and is one of the indicators of battery characteristics.
【0023】ここで、絶縁層の厚みを0.5 μm 以上とし
ているのは、0.5 μm 未満にすると電気絶縁性が不安定
になり、確保されなくなるからである。絶縁層の表面粗
度がRa0.5 〜200 μm であることとしているのは、Ra0.
5 μm 未満の場合には光利用効率が殆ど向上せず、不充
分であり、Ra200 μm 超の場合にはRaを大きくしても光
利用効率が殆ど変わらず、かえって光電素子積層膜の成
膜工程の不具合の原因となる(成膜の際にマスクが不充
分であることによるセルの不良等が生じる原因となる)
からである。尚、光利用効率の向上の点からはRa0.8 μ
m 以上とすることが望ましく、更にはRa1μm 以上とす
ることが好ましい。光電素子積層膜の成膜の安定性向上
の点からはRa20μm 以下とすることが望ましく、更には
Ra10μm以下とすることが好ましい。Here, the reason why the thickness of the insulating layer is 0.5 μm or more is that if the thickness is less than 0.5 μm, the electrical insulation becomes unstable and cannot be ensured. The reason that the surface roughness of the insulating layer is Ra 0.5 to 200 μm is Ra0.
When the thickness is less than 5 μm, the light utilization efficiency hardly improves and is insufficient. When the Ra is greater than 200 μm, the light utilization efficiency hardly changes even when Ra is increased. It causes process failures (it causes cell failure etc. due to insufficient mask during film formation)
Because. In addition, Ra0.8 μ
m or more, more preferably Ra 1 μm or more. From the viewpoint of improving the stability of the formation of the photoelectric element laminated film, it is desirable that the Ra be 20 μm or less, and furthermore,
Ra is preferably 10 μm or less.
【0024】前記絶縁層の表面(Ra0.5 〜200 μm )は
凹凸状であり、種々の角度の傾斜面からなる。この凹凸
部傾斜面の傾斜角度が30度未満の部分は光利用効率の向
上に殆ど寄与せず、傾斜角度30度以上の傾斜面の割合を
大きくすると光利用効率が向上する傾向がある。特に、
傾斜角度30度以上の傾斜面の割合が投影面積比で5%以
上である場合に光利用効率がより向上する。一方、傾斜
角度80度超の傾斜面があると、光電素子積層膜の厚み等
が不均一になり、太陽電池特性が低下する傾向がある。
従って、前記絶縁層の表面において傾斜角度80度超の傾
斜面はないようにすると共に、傾斜角度30度以上の傾斜
面の割合が投影面積比で5%以上となるようにすること
が望ましい。即ち、前記絶縁層の表面の凹凸部傾斜面の
傾斜角度が80度以下であると共に、この傾斜面の中で傾
斜角度:30度以上80度以下の傾斜面が占める割合が投影
面積比で5%以上であるようにすることが望ましい(第
2発明)。The surface (Ra 0.5 to 200 μm) of the insulating layer is uneven, and has inclined surfaces at various angles. The portion where the angle of inclination of the concavo-convex portion inclined surface is less than 30 degrees hardly contributes to the improvement of the light use efficiency, and the light use efficiency tends to be improved when the ratio of the inclined surface having the inclination angle of 30 degrees or more is increased. In particular,
When the ratio of the inclined surface having the inclination angle of 30 degrees or more is 5% or more in the projection area ratio, the light use efficiency is further improved. On the other hand, when there is an inclined surface having an inclination angle of more than 80 degrees, the thickness and the like of the photoelectric element laminated film become non-uniform, and the solar cell characteristics tend to deteriorate.
Therefore, it is desirable that there be no inclined surface having an inclination angle of more than 80 degrees on the surface of the insulating layer, and that the ratio of the inclined surface having an inclination angle of 30 degrees or more be 5% or more in terms of the projected area ratio. That is, the inclination angle of the uneven surface inclined surface on the surface of the insulating layer is 80 degrees or less, and the ratio of the inclined surface having an inclination angle of 30 degrees or more and 80 degrees or less in the inclined surface is 5% in projected area ratio. % Is desirable (second invention).
【0025】かかる絶縁層の表面形状の例を図1〜3に
示す。図1の場合、凹凸部傾斜面の傾斜角度は50度であ
る。図2の場合、傾斜面の傾斜角度は40度である。図3
の場合、傾斜角度20度の傾斜面、40度の傾斜面、70度の
傾斜面がある。このことからわかる如く、凹凸部傾斜面
の傾斜角度とは、絶縁層の下部の金属板の平面に対して
絶縁層の凹凸部傾斜面がなす角度のことである。Examples of the surface shape of the insulating layer are shown in FIGS. In the case of FIG. 1, the angle of inclination of the uneven portion inclined surface is 50 degrees. In the case of FIG. 2, the inclination angle of the inclined surface is 40 degrees. FIG.
In the case of, there are a slope of 20 degrees, a slope of 40 degrees, and a slope of 70 degrees. As can be seen from the above, the inclination angle of the uneven portion inclined surface is the angle formed by the uneven portion inclined surface of the insulating layer with respect to the plane of the metal plate below the insulating layer.
【0026】傾斜角度:30度以上80度以下の傾斜面が占
める割合が投影面積比で5%以上であるとは、絶縁層の
表面(凹凸部を有する)を投影したとき、即ち、表面の
上方からみた立体の形(凹凸)を平面に表したときの、
投影された部分の全長長さと単位幅との積(単位幅当た
りの面積)に対する、傾斜角度:30度以上80度以下の傾
斜面が投影された部分の長さと単位幅との積(単位幅当
たりの面積)の割合が5%以上であることをいう。例え
ば、図5の場合、投影された部分の全長長さはL0、傾斜
角度:30度以上80度以下の傾斜面が投影された部分の長
さはL1であり、傾斜角度:30度以上80度以下の傾斜面が
占める投影面積比での割合R(%)は、R=〔(L1×
1)/(L0×1)〕×100 =(L1/L0)×100 の式によ
り求められる値(%)である。このRが5%以上である
ことである。Inclination angle: The ratio of the occupied area of the inclined surface of 30 ° or more and 80 ° or less as 5% or more in terms of the projected area ratio means that the surface (having irregularities) of the insulating layer is projected, that is, When the three-dimensional shape (concavo-convex) viewed from above is represented on a plane,
Inclination angle with respect to the product of the total length of the projected portion and the unit width (the area per unit width): The product of the length and the unit width of the portion where the inclined surface of 30 ° to 80 ° is projected (unit width) Per area) is 5% or more. For example, in the case of FIG. 5, the total length the length of the projected portions L 0, the inclination angle: 30 degrees 80 degrees or less inclined surface length of the projected portion is L 1, the inclination angle: 30 degrees The ratio R (%) of the projected area ratio occupied by the inclined surface of not less than 80 degrees is R = [(L 1 ×
1) / (L 0 × 1)] × 100 = (L 1 / L 0 ) × 100 This is a value (%) obtained by the formula: This R is 5% or more.
【0027】本発明に係る太陽電池用絶縁基板の製造方
法は、前述のように、金属板を酸あるいはアルカリ溶液
を用いて表面形状を調整した後、この金属板に絶縁層を
形成するようにしている(第7発明、第5発明)。かか
る方法によれば、金属板の表面形状をRaで0.5 〜200 μ
m となるように調整し得、その後、該金属板表面に該金
属板表面形状と同様の表面形状(Ra:0.5 〜200 μm )
を有する絶縁層を厚み0.5 μm 以上で形成させ得る。従
って、本発明に係る太陽電池用絶縁基板を得ることがで
きる。In the method of manufacturing an insulating substrate for a solar cell according to the present invention, as described above, after adjusting the surface shape of a metal plate using an acid or alkali solution, an insulating layer is formed on the metal plate. (The seventh invention and the fifth invention). According to this method, the surface shape of the metal plate is 0.5 to 200 μm in Ra.
m, and then the surface shape of the metal plate is similar to the surface shape of the metal plate (Ra: 0.5 to 200 μm).
Can be formed with a thickness of 0.5 μm or more. Therefore, the solar cell insulating substrate according to the present invention can be obtained.
【0028】更には、前記の如く金属板の表面形状をRa
で0.5 〜200 μm となるように調整し得ると同時に、こ
の金属板表面の凹凸部傾斜面の傾斜角度が80度以下であ
ると共に、この傾斜面の中で傾斜角度:30度以上80度以
下の傾斜面が占める割合が投影面積比で5%以上である
ような表面形状に調整し得、その後、該金属板表面に該
金属板表面形状と同様の表面形状(Ra:0.5 〜200 μm
、凹凸部傾斜面の傾斜角度:30度以上80度以下)を有
する絶縁層を厚み0.5 μm 以上で形成させ得る。このよ
うにすると、第2発明に係る太陽電池用絶縁基板を得る
ことができる。Further, as described above, the surface shape of the metal plate is Ra
At the same time, the inclination angle of the uneven surface inclined surface of the metal plate surface is 80 degrees or less, and the inclination angle in the inclined surface: 30 degrees or more and 80 degrees or less Can be adjusted to a surface shape such that the ratio of the occupied slope surface to the projected area ratio is 5% or more, and then the surface shape of the metal plate is similar to that of the metal plate (Ra: 0.5 to 200 μm).
And an insulating layer having an inclination angle of the uneven surface inclined surface of 30 degrees or more and 80 degrees or less) with a thickness of 0.5 μm or more. By doing so, the solar cell insulating substrate according to the second invention can be obtained.
【0029】前記酸溶液としては、硝酸(0.1 〜72%HN
O3)、塩酸(0.1 〜36%HCl)、ふっ化水素酸(0.1 〜48
%HF)、これらの混合液、りん酸(0.1 〜85%H3PO4)等
が使用でき、前記アルカリ溶液としては、水酸化カリウ
ム水溶液(0.1 〜20%KOH)、水酸化ナトリウム水溶液
(0.1 〜20%NaOH)等が使用できる。例えば、金属板の
表面形状の調整を化学溶解により行う場合は、体積比で
硝酸(60%HNO3)1:塩酸(36%HCl)3の混合液(液温
30℃)を用い、これに金属板を浸漬することにより前記
の如き表面形状、即ち、Ra:0.5 〜200 μm という表面
形状や、Ra:0.5〜200 μm 、凹凸部傾斜面の傾斜角
度:30度以上80度以下という表面形状が得られる。As the acid solution, nitric acid (0.1 to 72% HN
O 3 ), hydrochloric acid (0.1-36% HCl), hydrofluoric acid (0.1-48
% HF), a mixture thereof, phosphoric acid (0.1 to 85% H 3 PO 4 ), and the like. Examples of the alkaline solution include an aqueous solution of potassium hydroxide (0.1 to 20% KOH) and an aqueous solution of sodium hydroxide (0.1 to 0.1% KOH). -20% NaOH) can be used. For example, when the surface shape of a metal plate is adjusted by chemical dissolution, a mixture of nitric acid (60% HNO 3 ) 1: hydrochloric acid (36% HCl) 3 in volume ratio (liquid temperature)
30 ° C.), and a metal plate is immersed in this to obtain the surface shape as described above, that is, Ra: 0.5 to 200 μm, Ra: 0.5 to 200 μm, and the inclination angle of the uneven portion inclined surface: 30 A surface shape of not less than 80 degrees and not more than 80 degrees is obtained.
【0030】金属板の表面形状の調整を電気化学溶解に
より行う場合は、より短時間で処理が可能であり、金属
板を濃度0.1 %以上の塩酸水溶液、濃度0.1 %以上の硝
酸水溶液、或いは、これらの混合水溶液中において電流
密度1〜300A/dm2で交流電解して表面形状を調整する
と、前記の如き表面形状、即ち、Ra:0.5 〜200 μm と
いう表面形状や、Ra:0.5 〜200 μm 、凹凸部傾斜面の
傾斜角度:30度以上80度以下という表面形状が得られる
(第8発明、第6発明)。When the surface shape of the metal plate is adjusted by electrochemical dissolution, the treatment can be performed in a shorter time, and the metal plate can be treated with an aqueous solution of hydrochloric acid having a concentration of 0.1% or more, an aqueous solution of nitric acid having a concentration of 0.1% or more, or When the surface shape is adjusted by alternating current electrolysis at a current density of 1 to 300 A / dm 2 in these mixed aqueous solutions, the surface shape as described above, that is, the surface shape of Ra: 0.5 to 200 μm or Ra: 0.5 to 200 μm Thus, a surface shape having an inclination angle of the inclined surface of the uneven portion: 30 degrees or more and 80 degrees or less can be obtained (the eighth invention and the sixth invention).
【0031】上記の如き電気化学溶解法において、塩酸
水溶液の塩酸濃度を0.1 %未満、或いは、硝酸水溶液の
硝酸濃度を0.1 %未満とした場合には、Al合金等の金属
の溶解が進まず、Ra:0.5 〜200 μm という表面形状を
得ることが困難であった。塩酸濃度及び硝酸濃度の上限
値は金属板表面形状調整の面からは特に限定する必要は
ないが、液の取り扱いの容易さを考慮すると15%以下と
することが好ましい。電流密度については、これを1A/
dm2 未満とした場合には、電解の効果が殆どなく、300A
/dm2超にした場合には、発熱が大きく均一な表面形状の
制御が困難である。塩酸濃度:1.5 〜10%、硝酸濃度:
1〜3%の混合水溶液中で電流密度15〜100A/dm2で交流
電解すると、特に光利用効率の向上に効果的な表面形状
が得られた。In the above-described electrochemical dissolution method, when the hydrochloric acid concentration of the aqueous hydrochloric acid solution is less than 0.1% or the nitric acid concentration of the aqueous nitric acid solution is less than 0.1%, the dissolution of metals such as Al alloy does not proceed. Ra: It was difficult to obtain a surface shape of 0.5 to 200 μm. The upper limits of the hydrochloric acid concentration and the nitric acid concentration need not be particularly limited from the viewpoint of adjusting the surface shape of the metal plate, but are preferably 15% or less in consideration of easy handling of the liquid. As for the current density, this is 1A /
when less than dm 2, the effect of electrolysis little, 300A
When the ratio is more than / dm 2 , it is difficult to control a uniform surface shape which generates a large amount of heat. Hydrochloric acid concentration: 1.5-10%, nitric acid concentration:
When AC electrolysis was performed at a current density of 15 to 100 A / dm 2 in a 1 to 3% mixed aqueous solution, a surface shape particularly effective for improving light use efficiency was obtained.
【0032】本発明において、絶縁層は絶縁性を有して
いる必要はあるが、その種類は特には限定されない。絶
縁層の形成方法としては、絶縁性の化合物を金属板表面
に成膜する方法が種々あるが、Ra:0.5 〜200 μm の表
面形状、或いは、Ra:0.5 〜200 μm 且つ凹凸部傾斜面
の傾斜角度:30度以上80度以下の表面形状(テクスチャ
構造)に調整した金属板表面に、該金属板表面形状と同
様の表面形状を有する絶縁層を形成させようとする場合
には、該金属板表面形状(テクスチャ構造)に大きな影
響を与えないような絶縁層形成方法を採用することが望
ましい。本発明者らはかかる絶縁層形成方法について検
討し、その結果、金属板がAl又はAl合金板である場合、
この陽極酸化処理によって陽極酸化層からなる絶縁層を
形成させ、或いは更に該層の上に該層とは別の絶縁性物
質からなる絶縁層を形成させ、これらを絶縁層とすれ
ば、下記の如き陽極酸化の特徴によりテクスチャ構造に
大きな影響を与えずに絶縁層を形成し得、絶縁性の付
与、確保が実現し得ることを見出した。In the present invention, the insulating layer needs to have insulating properties, but the type thereof is not particularly limited. There are various methods for forming the insulating layer, for example, a method of forming an insulating compound on the surface of the metal plate. The surface shape is Ra: 0.5 to 200 μm, or Ra: 0.5 to 200 μm and Inclination angle: When an insulating layer having a surface shape similar to the surface shape of the metal plate is to be formed on the surface of the metal plate adjusted to a surface shape (texture structure) of 30 degrees or more and 80 degrees or less, the metal is used. It is desirable to adopt an insulating layer forming method that does not significantly affect the plate surface shape (texture structure). The present inventors have studied such an insulating layer forming method, and as a result, when the metal plate is an Al or Al alloy plate,
By forming an insulating layer made of an anodized layer by this anodizing treatment, or further forming an insulating layer made of an insulating material different from the layer on the layer, and using these as insulating layers, It has been found that the characteristics of anodic oxidation can form an insulating layer without significantly affecting the texture structure, and can provide and secure insulating properties.
【0033】即ち、陽極酸化処理において陽極酸化は処
理液と接しているAl又はAl合金板表面からその内部方向
にAlの酸化物が形成されて進行するので、陽極酸化処理
によって陽極酸化層からなる絶縁層を形成させる方法
は、陽極酸化層とは別の絶縁性物質からなる絶縁層を形
成させる方法とは異なり、Al又はAl合金板表面形状(テ
クスチャ構造)に影響を殆ど与えず、絶縁層形成前のAl
又はAl合金板表面形状と同様の表面形状を有する絶縁層
を形成させ得る(第4発明)。That is, in the anodic oxidation treatment, the anodic oxidation proceeds from the surface of the Al or Al alloy plate which is in contact with the treatment liquid with the formation of Al oxide in the inward direction thereof. The method of forming an insulating layer is different from the method of forming an insulating layer made of an insulating material different from the anodized layer, and has almost no effect on the surface shape (texture structure) of the Al or Al alloy plate. Al before formation
Alternatively, an insulating layer having a surface shape similar to the surface shape of the Al alloy plate can be formed (fourth invention).
【0034】更に、この陽極酸化処理による方法によれ
ば、陽極酸化処理特有の微細な凹凸が重畳されるため、
薄膜太陽電池基板に適用した際に光利用効率をより高め
得る太陽電池用絶縁基板が得られるという利点がある。
かかる陽極酸化処理によって形成された陽極酸化層の一
例を図4に示す。これは、Al合金板表面を図1の如き表
面形状に調整し、これを陽極酸化処理して陽極酸化層を
形成させた後の表面形状の例である。Further, according to the method based on the anodic oxidation treatment, fine irregularities peculiar to the anodic oxidation treatment are superimposed.
When applied to a thin-film solar cell substrate, there is an advantage that an insulating substrate for a solar cell that can further enhance light use efficiency can be obtained.
FIG. 4 shows an example of the anodized layer formed by such anodizing treatment. This is an example of the surface shape after the surface of the Al alloy plate is adjusted to the surface shape as shown in FIG. 1 and anodized to form an anodized layer.
【0035】上記陽極酸化処理の条件は特には限定され
ず、処理液としては例えば硫酸系、しゅう酸系、りん酸
系、ほう酸系の処理液を用いればよい。The conditions for the above anodic oxidation treatment are not particularly limited, and as the treatment liquid, for example, a sulfuric acid-based, oxalic acid-based, phosphoric acid-based, or boric acid-based treatment liquid may be used.
【0036】絶縁層は導電性のない化合物、樹脂等から
なる層(以降、被覆絶縁層という)を塗布、蒸着等の方
法によって形成しても得られるが、この場合には絶縁層
を厚くすると金属板表面のテクスチャ構造が失われ易く
なり(即ち、このテクスチャ構造が絶縁層表面に残り難
くなり)、絶縁層形成前の金属板表面形状と同様の表面
形状を有する絶縁層を形成し難くなるという支障があ
る。即ち、絶縁層の厚みは、前述の如く、電気絶縁性の
確保のために0.5 μm 以上とする必要があり、絶縁層の
厚みが厚いほど安定した絶縁性が得られるので、その点
では絶縁層は厚いことが好ましいが、被覆絶縁層の場合
はこれを厚く形成すると、金属板表面のテクスチャ構造
が失われ易くなり、特にRa10μm 以下のテクスチャ構造
が失われる場合がある。但し、金属板がAl又はAl合金板
である場合、陽極酸化処理によって陽極酸化層からなる
絶縁層を形成した後に被覆絶縁層を形成すれば、被覆絶
縁層を直接Al又はAl合金板に形成する場合に比べて、絶
縁性の確保に必要な被覆絶縁層の厚みが1/10程度とな
り、薄くてよくなるので、Al又はAl合金板表面のテクス
チャ構造への影響が小さくなり、絶縁層形成前のAl又は
Al合金板表面形状と同様の表面形状を有する絶縁層を形
成し得る(第4発明)。例えば、厚み10μm の陽極酸化
層を形成した場合には厚み1μm の被覆絶縁層を形成す
ることで、厚み10μm の被覆絶縁層のみを直接形成した
場合と同等の絶縁性が得られる。特に、塗布法によって
陽極酸化層上に被覆絶縁層を形成する際には、陽極酸化
層のポアによる塗布材の捕捉効果により塗布処理が均一
になると共に被覆絶縁層の密着性が向上し、陽極酸化層
の1/5相当量以下の塗布量であればテクスチャ構造に
影響を与えずに極めて高い絶縁性を実現することができ
る。かかる作用効果は、硫酸150 〜250g/Lの水溶液を用
いて電極間電圧を10〜20Vにして陽極酸化処理をした場
合に特に顕著であり、溶液及び電源の取り扱いも容易で
あるが、前記例示の処理液を用いるような他の条件によ
り陽極酸化処理をした場合においても充分にかかる作用
効果を得ることができる。The insulating layer can also be obtained by forming a layer made of a compound or resin having no conductivity (hereinafter referred to as a coating insulating layer) by a method such as coating or vapor deposition. In this case, if the insulating layer is thickened, The texture structure on the surface of the metal plate is easily lost (that is, the texture structure hardly remains on the surface of the insulating layer), and it is difficult to form an insulating layer having the same surface shape as the surface shape of the metal plate before the formation of the insulating layer. There is a problem. That is, as described above, the thickness of the insulating layer needs to be 0.5 μm or more in order to secure electrical insulation, and the thicker the insulating layer, the more stable the insulating property can be obtained. Although it is preferable that the thickness of the coating insulating layer is large, the texture structure on the surface of the metal plate is easily lost, and in particular, the texture structure of Ra 10 μm or less may be lost. However, when the metal plate is an Al or Al alloy plate, if a coating insulating layer is formed after forming an insulating layer made of an anodized layer by anodizing treatment, the coating insulating layer is formed directly on the Al or Al alloy plate. In comparison with the case, the thickness of the coating insulating layer necessary for securing the insulating property is about 1/10, and it becomes thinner, so that the influence on the texture structure on the surface of the Al or Al alloy plate is reduced, and before the insulating layer is formed. Al or
An insulating layer having a surface shape similar to the surface shape of the Al alloy plate can be formed (fourth invention). For example, when an anodic oxide layer having a thickness of 10 μm is formed, by forming a coating insulating layer having a thickness of 1 μm, the same insulating properties as when directly forming a coating insulating layer having a thickness of 10 μm can be obtained. In particular, when the coating insulating layer is formed on the anodic oxide layer by the coating method, the coating process becomes uniform due to the effect of capturing the coating material by the pores of the anodic oxide layer, and the adhesion of the coating insulating layer improves, If the coating amount is less than or equal to 1/5 of the oxide layer, extremely high insulation can be realized without affecting the texture structure. Such an effect is particularly remarkable when anodizing treatment is performed by using an aqueous solution of sulfuric acid of 150 to 250 g / L and setting the voltage between the electrodes to 10 to 20 V, and the handling of the solution and the power supply is easy. Such an effect can be sufficiently obtained even when the anodic oxidation treatment is performed under other conditions such as the use of the treatment liquid.
【0037】絶縁層の厚みの上限値は特には限定されな
いが、一般に陽極酸化層等の絶縁性の無機化合物は厚く
なると割れ易くなり、その基板の金属板が有する特徴で
あるフレキシブル性を活用し得なくなるので、陽極酸化
層あるいはそれを含む層を絶縁層とする場合には、この
陽極酸化層の厚みを100 μm 以下とすることが望まし
い。樹脂等の如く柔軟性のある物質で絶縁層を形成する
場合には、所要の絶縁層表面形状が得られる限りにおい
て絶縁層の厚みを100 μm 以上とさらに厚くすることが
できる。The upper limit of the thickness of the insulating layer is not particularly limited, but generally, an insulating inorganic compound such as an anodic oxide layer is liable to be cracked when it is thick, and utilizes the flexibility characteristic of the metal plate of the substrate. When the anodized layer or a layer containing the anodized layer is used as an insulating layer, the thickness of the anodized layer is desirably 100 μm or less. When the insulating layer is formed of a flexible material such as a resin, the thickness of the insulating layer can be further increased to 100 μm or more as long as a required insulating layer surface shape is obtained.
【0038】金属板としてはその種類は特には限定され
ず、例えばAlやAl合金を用いることができる。このAlや
Al合金を用いた場合、前述の如く陽極酸化処理によって
絶縁層形成前のAl又はAl合金板表面形状と同様の表面形
状を有する陽極酸化層からなる絶縁層を形成させ得る等
の作用効果を奏し得るという利点があり、更には、鉄や
ステンレス鋼を用いた場合よりも太陽電池用絶縁基板が
軽量となり、ひいては軽量な太陽電池が得られ、又、マ
グネシウムやチタン等Al以外の非鉄金属を用いた場合よ
りも安価に太陽電池が作製できるという利点がある(第
3発明)。The type of the metal plate is not particularly limited, and for example, Al or an Al alloy can be used. This Al
When an Al alloy is used, the anodic oxidation treatment as described above has the effect of forming an insulating layer composed of an anodic oxide layer having the same surface shape as the surface shape of the Al or Al alloy plate before forming the insulating layer. In addition, there is the advantage that the solar cell insulating substrate becomes lighter than when iron or stainless steel is used, and thus a lighter solar cell is obtained.In addition, non-ferrous metals other than Al such as magnesium and titanium are used. There is an advantage that a solar cell can be manufactured at a lower cost than in the case where it is provided (third invention).
【0039】上記Al合金としては特には限定されず、例
えば1000系、3000系、5000系、6000系Al合金を用いるこ
とができ、これらのAl合金には陽極酸化処理によって陽
極酸化層からなる絶縁層を形成させることができる。The Al alloy is not particularly limited. For example, 1000 series, 3000 series, 5000 series, and 6000 series Al alloys can be used. Layers can be formed.
【0040】[0040]
【実施例】Al合金板(A5052 )を表面形状処理液中にお
いて交流電解することにより、或いは、化学溶解するこ
とにより、Al合金板の表面形状を調整した後、陽極酸化
処理して該Al合金板表面に陽極酸化層を形成させた。か
かる方法により、本発明の実施例1〜4に係る太陽電池
用絶縁基板を製作した。又、このようなAl合金板の表面
形状の調整、陽極酸化層の形成の後、被覆絶縁層を形成
させ、これにより本発明の実施例5〜9に係る太陽電池
用絶縁基板を製作した。EXAMPLE An Al alloy plate (A5052) was subjected to an alternating current electrolysis in a surface shape treatment liquid or by chemical dissolution to adjust the surface shape of the Al alloy plate, and then subjected to anodizing treatment to form the Al alloy plate. An anodized layer was formed on the plate surface. In this way, the solar cell insulating substrates according to Examples 1 to 4 of the present invention were manufactured. After the adjustment of the surface shape of the Al alloy plate and the formation of the anodic oxide layer, a coating insulating layer was formed, thereby manufacturing solar cell insulating substrates according to Examples 5 to 9 of the present invention.
【0041】ここで、上記表面形状処理液としては、酸
あるいはアルカリを含む水溶液を用いた。この酸濃度あ
るいはアルカリ濃度は表1に示す通りである。又、上記
陽極酸化処理における電解液の種類、温度、電解電圧、
及び、上記陽極酸化処理により形成された陽極酸化層の
層(膜)厚は、表1に示す通りである。又、陽極酸化層
上に形成させた被覆絶縁層の種類及び形成方法は表1に
示す通りである。Here, as the surface shape treatment liquid, an aqueous solution containing an acid or an alkali was used. The acid concentration or alkali concentration is as shown in Table 1. In addition, the type of electrolyte in the anodizing treatment, temperature, electrolytic voltage,
The layer (film) thickness of the anodized layer formed by the above anodizing treatment is as shown in Table 1. Table 1 shows the types and methods of forming the covering insulating layer formed on the anodized layer.
【0042】一方、Al合金板(A5052 )を表面形状処理
液中において交流電解あるいは化学溶解することにより
Al合金板の表面形状を調整した後、或いは更に陽極酸化
層を形成させた後、被覆絶縁層を形成させ、これにより
比較例1〜4に係る太陽電池用絶縁基板を製作した。
又、Al合金板(A5052 )を研磨あるいは切削加工して表
面形状を調整した後、陽極酸化層を形成させ、これによ
り比較例5〜6に係る太陽電池用絶縁基板を製作した。On the other hand, by subjecting an Al alloy plate (A5052) to AC electrolysis or chemical dissolution in a surface shape treatment liquid,
After adjusting the surface shape of the Al alloy plate, or after further forming an anodic oxide layer, a coating insulating layer was formed, thereby manufacturing solar cell insulating substrates according to Comparative Examples 1 to 4.
Also, after the Al alloy plate (A5052) was polished or cut to adjust the surface shape, an anodic oxide layer was formed, thereby producing solar cell insulating substrates according to Comparative Examples 5 and 6.
【0043】このようにして製作した実施例1〜9及び
比較例1〜6に係る太陽電池用絶縁基板について、基板
表面(絶縁層表面)の中心線平均粗さRa及び傾斜角度30
〜80度の凹凸部傾斜面が占める割合(投影面積比)Rを
測定した。この結果を表1に示す。ここで、Raは、表面
粗度計を用いて測定した。Rは、表面粗度計により絶縁
層表面のプロフィールを得、このプロフィールから測定
し、又、絶縁層の断面形状を光学顕微鏡及び走査型電子
顕微鏡を用いて観察することにより測定した。With respect to the solar cell insulating substrates according to Examples 1 to 9 and Comparative Examples 1 to 6 manufactured as described above, the center line average roughness Ra and the inclination angle 30 of the substrate surface (insulating layer surface) were obtained.
The ratio (projected area ratio) R occupied by the uneven surface inclined surface of -80 degrees was measured. Table 1 shows the results. Here, Ra was measured using a surface roughness meter. R was measured by obtaining a profile of the surface of the insulating layer with a surface roughness meter and measuring the profile, and observing the cross-sectional shape of the insulating layer using an optical microscope and a scanning electron microscope.
【0044】又、上記実施例1〜9及び比較例1〜6に
係る太陽電池用絶縁基板について、拡散反射率を測定
し、これより光利用効率を評価した。又、電気絶縁性の
測定を行った。これらの結果を表1に示す。Further, with respect to the insulating substrates for solar cells according to Examples 1 to 9 and Comparative Examples 1 to 6, the diffuse reflectance was measured, and the light use efficiency was evaluated based on the measured values. In addition, the electrical insulation was measured. Table 1 shows the results.
【0045】ここで、電気絶縁性の測定は、上記太陽電
池用絶縁基板の表面(絶縁層表面)に膜厚1μm のAl電
極をスパッタリングにより形成した後、パラメータアナ
ライザ(ヒューレット・パッカード社製HP4156
A)により電圧を0〜100 Vまで上昇させて上記Al電極
の表面と上記基板の裏面(絶縁層を有する面の反対側の
面、即ち絶縁層を形成していないAl合金板表面)との間
の漏れ電流を測定する方法により行った。又、拡散反射
率の測定は、上記太陽電池用絶縁基板の表面(絶縁層表
面)に真空蒸着装置を用いて金(Au)を約500 Å厚さに
なるように蒸着した後、これについて分光光度計(島津
製UV-240)を用いて拡散反射率を測定する方法により行
った。尚、拡散反射率は反射および乱反射の程度を示す
特性値であり、拡散反射率が大きいほど光利用効率が大
きいことになり、ひいては発電効率に優れていることに
なる。Here, the electrical insulation was measured by forming an Al electrode having a thickness of 1 μm on the surface of the insulating substrate for a solar cell (the surface of the insulating layer) by sputtering, and then using a parameter analyzer (HP4156 manufactured by Hewlett-Packard Company).
A) The voltage is increased from 0 to 100 V by A), and the surface of the Al electrode and the back surface of the substrate (the surface opposite to the surface having the insulating layer, that is, the surface of the Al alloy plate on which the insulating layer is not formed) The measurement was performed by a method of measuring a leakage current during the measurement. The diffuse reflectance was measured by depositing gold (Au) to a thickness of about 500 mm on the surface of the insulating substrate for a solar cell (the surface of the insulating layer) using a vacuum evaporation apparatus, and then analyzing the spectrum. The measurement was performed by a method of measuring diffuse reflectance using a photometer (UV-240 manufactured by Shimadzu). The diffuse reflectance is a characteristic value indicating the degree of reflection and irregular reflection, and the higher the diffuse reflectance, the higher the light use efficiency, and the better the power generation efficiency.
【0046】[0046]
【表1】 [Table 1]
【0047】[0047]
【表2】 [Table 2]
【0048】表1〜2の光利用効率の欄において、○は
拡散反射率:20%以上であって光利用効率に優れ、△は
拡散反射率:15%以上20%未満であって光利用効率が良
好であり、×は拡散反射率:15%未満であって光利用効
率が不良であることを示すものである。又、表1〜2の
電気絶縁性の欄において、○は電圧:100Vでの漏れ電
流:10-6A/mm2 未満であって絶縁性が良好であり、×は
電圧:100Vでの漏れ電流:10-6A/mm2 以上であって絶縁
性が不良であることを示すものである。In the column of light utilization efficiency in Tables 1 and 2, は indicates a diffuse reflectance of 20% or more and is excellent in light utilization efficiency, and Δ indicates a diffuse reflectance of 15% or more and less than 20% and indicates a light utilization. The efficiency is good, and X indicates that the diffuse reflectance is less than 15% and the light use efficiency is poor. In the column of electrical insulation in Tables 1 and 2, ○ indicates a leak current at a voltage of 100 V: less than 10 −6 A / mm 2, indicating good insulation. X indicates a leak at a voltage of 100 V. Current: 10 −6 A / mm 2 or more, indicating poor insulation.
【0049】表1からわかる如く、比較例1〜5に係る
太陽電池用絶縁基板は光利用効率及び/又は電気絶縁性
が不良であり、これに対し、本発明の実施例1〜9に係
る太陽電池用絶縁基板は、光利用効率に優れていると共
に電気絶縁性が良好である。As can be seen from Table 1, the insulating substrates for solar cells according to Comparative Examples 1 to 5 have poor light use efficiency and / or electrical insulation, whereas the insulating substrates according to Examples 1 to 9 of the present invention. The solar cell insulating substrate has excellent light use efficiency and good electrical insulation.
【0050】より詳細には、次のようなことがいえる。
実施例1〜4に係る太陽電池用絶縁基板は、絶縁層を陽
極酸化層のみで形成したものであり、又、実施例5〜7
に係る太陽電池用絶縁基板は、陽極酸化層形成後にCVD
法(化学蒸着法)によりSiO2層を形成したものであり、
いずれも絶縁層表面は絶縁層形成前のAl合金板表面形状
と同様の表面形状を有し、本発明に係る太陽電池用絶縁
基板の構成要件を満たしている。実施例8〜9に係る太
陽電池用絶縁基板は、陽極酸化層形成後にSi酸化物系の
層を塗布法で形成したものであり、このとき塗布量は通
常の金属面で1μm の厚さとなるような量としたが、塗
布材の一部が陽極酸化層中のポアに浸透して厚い層にな
らず、そのため絶縁層表面は絶縁層形成前のAl合金板表
面形状とほぼ同様の表面形状を有し、本発明に係る太陽
電池用絶縁基板の構成要件を満たしている。そのため、
これら実施例1〜9に係る太陽電池用絶縁基板は、いず
れも光利用効率に優れ、又、電気絶縁性が良好である。More specifically, the following can be said.
The insulating substrates for solar cells according to Examples 1 to 4 each have an insulating layer formed of only an anodized layer.
The insulating substrate for solar cells according to
SiO 2 layer is formed by the method (chemical vapor deposition),
In any case, the surface of the insulating layer has a surface shape similar to the surface shape of the Al alloy plate before the formation of the insulating layer, and satisfies the structural requirements of the solar cell insulating substrate according to the present invention. The insulating substrates for solar cells according to Examples 8 and 9 were obtained by forming an Si oxide-based layer by a coating method after forming an anodic oxide layer, and the coating amount was 1 μm on a normal metal surface. However, the coating material did not penetrate into the pores in the anodic oxide layer and did not become a thick layer, so the surface of the insulating layer had almost the same surface shape as the Al alloy plate before the formation of the insulating layer. And satisfies the constituent requirements of the solar cell insulating substrate according to the present invention. for that reason,
Each of the insulating substrates for solar cells according to Examples 1 to 9 has excellent light use efficiency and good electrical insulation.
【0051】これに対し、比較例1に係るものは、本発
明に係る太陽電池用絶縁基板の構成要件である表面形状
を満たしていないため、光利用効率が不良であり、不充
分である。比較例2に係るものは、光利用効率は優れて
いるが、絶縁層の厚みが薄いため、電気絶縁性が不良で
ある。比較例3に係るものは、比較例2の場合よりも被
覆絶縁層の厚みを厚くしたものであり、そのため電気絶
縁性は改善されて良好となったが、光利用効率が著しく
低下し不良となっている。比較例4に係るものは、絶縁
層の厚みが薄いため、電気絶縁性が不良である。比較例
5に係るものは、Raが小さいため、光利用効率が不良で
ある。比較例6に係るものは、光利用効率に優れ、又、
電気絶縁性が良好であるが、Raが大きすぎるため、光電
素子積層膜の成膜工程の不具合が発生するという問題点
を有する。尚、比較例4に係るものは、表面に傾斜角度
30度以上の傾斜面を有していないことに起因して、光利
用効率は各実施例と比較すれば小さいが、表面形状処理
の効果はあり、電気絶縁性が改善されれば使用して支障
はないものである。On the other hand, the device according to Comparative Example 1 does not satisfy the surface shape, which is a constituent requirement of the insulating substrate for a solar cell according to the present invention, so that the light use efficiency is poor and insufficient. The device according to Comparative Example 2 is excellent in light use efficiency, but is poor in electrical insulation because the thickness of the insulating layer is small. In the case of Comparative Example 3, the thickness of the coating insulating layer was made thicker than in the case of Comparative Example 2, so that the electrical insulation was improved and improved. Has become. In the case of Comparative Example 4, since the thickness of the insulating layer was small, the electrical insulation was poor. In the case of Comparative Example 5, since Ra is small, the light use efficiency is poor. The one according to Comparative Example 6 is excellent in light use efficiency, and
Although the electrical insulation is good, Ra is too large, which causes a problem in that a problem occurs in a process of forming a photoelectric element laminated film. In the case of Comparative Example 4, the surface has an inclination angle.
Due to not having an inclined surface of 30 degrees or more, the light use efficiency is small as compared with each embodiment, but there is an effect of surface shape treatment, and if the electric insulation property is improved, it is used. There is no hindrance.
【0052】[0052]
【発明の効果】本発明に係る太陽電池用絶縁基板は、以
上のような構成を有し作用をなすものであり、電気絶縁
性を有すると共に、割れ難く、可撓性を有し、ガラス基
板よりも軽量化を図ることができ、しかも光利用効率
(太陽電池の光の利用効率)の増大を図ることができ、
従って、種々の太陽電池用基板として好適に用いること
ができ、太陽電池のセル変換効率の向上、発電効率の向
上等の高機能化及び品質向上が図れると共に太陽電池の
用途の拡大が図れるという顕著な効果を奏し得る。本発
明に係る太陽電池用絶縁基板の製造方法は、かかる優れ
た特性を有する太陽電池用絶縁基板を製造して得ること
ができるという顕著な効果を奏し得る。The insulating substrate for a solar cell according to the present invention has the above-mentioned structure and functions, and has an electrical insulating property, is resistant to cracking, has flexibility, and has a glass substrate. It is possible to reduce the weight more and to increase the light use efficiency (light use efficiency of the solar cell),
Therefore, it can be suitably used as a substrate for various solar cells, and it is possible to improve the cell conversion efficiency of the solar cell, to enhance the functions such as the power generation efficiency, to improve the quality, and to expand the use of the solar cell. Can be achieved. The method for manufacturing a solar cell insulating substrate according to the present invention can have a remarkable effect that a solar cell insulating substrate having such excellent characteristics can be manufactured and obtained.
【図1】 絶縁層表面の凹凸部形状とこの凹凸部の傾斜
面の傾斜角度を説明するための図である。FIG. 1 is a diagram for explaining the shape of an uneven portion on the surface of an insulating layer and the inclination angle of an inclined surface of the uneven portion.
【図2】 絶縁層表面の凹凸部形状とこの凹凸部の傾斜
面の傾斜角度を説明するための図である。FIG. 2 is a diagram for explaining the shape of the uneven portion on the surface of the insulating layer and the inclination angle of the inclined surface of the uneven portion.
【図3】 絶縁層表面の凹凸部形状とこの凹凸部の傾斜
面の傾斜角度を説明するための図である。FIG. 3 is a diagram for explaining the shape of the uneven portion on the surface of the insulating layer and the inclination angle of the inclined surface of the uneven portion.
【図4】 凹凸形状の表面形状を有するAl合金板を陽極
酸化処理して形成された陽極酸化層とその表面形状の例
を示す図である。FIG. 4 is a diagram showing an example of an anodized layer formed by anodizing an Al alloy plate having an uneven surface shape and a surface shape thereof.
【図5】 絶縁層表面の凹凸部での傾斜角度:30度以上
80度以下の傾斜面が占める投影面積比での割合を説明す
るための図である。[Fig. 5] Inclination angle at irregularities on insulating layer surface: 30 degrees or more
It is a figure for explaining the ratio in the projected area ratio which the inclined surface of 80 degrees or less occupies.
フロントページの続き (72)発明者 上窪 文生 兵庫県神戸市西区高塚台1丁目5番5号 株式会社神戸製鋼所神戸総合技術研究所内 (72)発明者 増井 卓也 兵庫県神戸市西区高塚台1丁目5番5号 株式会社神戸製鋼所神戸総合技術研究所内 (72)発明者 鈴木 康平 兵庫県神戸市西区高塚台1丁目5番5号 株式会社神戸製鋼所神戸総合技術研究所内 Fターム(参考) 5F051 BA15 GA02 GA03 GA05 GA06 GA15 Continuation of the front page (72) Inventor Fumio Uebo 1-5-5 Takatsukadai, Nishi-ku, Kobe, Hyogo Prefecture Inside Kobe Research Institute, Kobe Steel Co., Ltd. (72) Inventor Takuya Masui 1 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Kobe Steel, Ltd. Kobe Institute of Technology, Kobe Steel Co., Ltd. (72) Kohei Suzuki 1-5-5, Takatsudai, Nishi-ku, Kobe, Hyogo Prefecture Kobe Steel, Ltd. Kobe Research Institute F-term (reference) 5F051 BA15 GA02 GA03 GA05 GA06 GA15
Claims (8)
池用絶縁基板であって、前記絶縁層の厚みが0.5μm
以上であると共に、前記絶縁層の表面粗度が中心線平均
粗さ(Ra)で0.5〜200μm であることを特徴と
する太陽電池用絶縁基板。1. A solar cell insulating substrate having an insulating layer on a surface of a metal plate, wherein the insulating layer has a thickness of 0.5 μm.
The insulating substrate for a solar cell as described above, wherein the surface roughness of the insulating layer is 0.5 to 200 μm in center line average roughness (Ra).
角度が80度以下であると共に、この傾斜面の中で傾斜
角度:30度以上80度以下の傾斜面が占める割合が投
影面積比で5%以上である請求項1記載の太陽電池用絶
縁基板。2. The projection area, wherein the inclination angle of the inclined surface of the uneven portion on the surface of the insulating layer is 80 degrees or less, and the ratio of the inclined surface having an inclination angle of 30 degrees or more and 80 degrees or less in the inclined surface is the projected area. The insulating substrate for a solar cell according to claim 1, wherein the ratio is 5% or more.
ウム合金からなる請求項1又は2記載の太陽電池用絶縁
基板。3. The solar cell insulating substrate according to claim 1, wherein the metal plate is made of aluminum or an aluminum alloy.
理によって形成された陽極酸化層を含む層からなる請求
項3記載の太陽電池用絶縁基板。4. The solar cell insulating substrate according to claim 3, wherein said insulating layer comprises a layer including an anodized layer formed by anodizing the metal plate.
いはアルカリ溶液を用いて表面形状調整されている請求
項4記載の太陽電池用絶縁基板。5. The insulating substrate for a solar cell according to claim 4, wherein a surface shape of the metal plate before the anodizing treatment is adjusted by using an acid or an alkali solution.
0.1質量%以上の塩酸水溶液、濃度0.1質量%以上
の硝酸水溶液、或いは、これらの混合水溶液中において
電流密度1〜300A/dm2 で交流電解されて表面形状
調整されている請求項4記載の太陽電池用絶縁基板。6. The method according to claim 1, wherein the metal plate before the anodizing treatment is a current solution having a current density of 1 to 300 A in a hydrochloric acid aqueous solution having a concentration of 0.1% by mass or more, a nitric acid aqueous solution having a concentration of 0.1% by mass or more, or a mixed aqueous solution thereof. a / dm 2 at the alternating current electrolysis by the surface shape adjusted to have claim 4 solar insulating substrate according.
て表面形状を調整した後、この金属板に絶縁層を形成す
ることを特徴とする太陽電池用絶縁基板の製造方法。7. A method for manufacturing an insulating substrate for a solar cell, comprising: adjusting the surface shape of a metal plate using an acid or alkali solution; and forming an insulating layer on the metal plate.
水溶液、濃度0.1質量%以上の硝酸水溶液、或いは、
これらの混合水溶液中において電流密度1〜300A/
dm2 で交流電解して表面形状を調整した後、この金属板
に絶縁層を形成することを特徴とする太陽電池用絶縁基
板の製造方法。8. The method according to claim 8, wherein the metal plate is a hydrochloric acid aqueous solution having a concentration of 0.1% by mass or more, a nitric acid aqueous solution having a concentration of 0.1% by mass or more, or
A current density of 1 to 300 A /
After adjusting the surface shape by alternating current electrolysis in dm 2, the method for manufacturing the solar cell insulating substrate and forming an insulating layer on the metal plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP10215773A JP2000049372A (en) | 1998-07-30 | 1998-07-30 | Insulation substrate for solar battery and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10215773A JP2000049372A (en) | 1998-07-30 | 1998-07-30 | Insulation substrate for solar battery and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000049372A true JP2000049372A (en) | 2000-02-18 |
Family
ID=16677998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP10215773A Pending JP2000049372A (en) | 1998-07-30 | 1998-07-30 | Insulation substrate for solar battery and its manufacture |
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Country | Link |
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JP (1) | JP2000049372A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299660A (en) * | 2001-03-30 | 2002-10-11 | Kyocera Corp | THIN-FILM CRYSTALLINE Si SOLAR CELL |
JP2009267332A (en) * | 2007-09-28 | 2009-11-12 | Fujifilm Corp | Substrate for solar cell, and solar cell |
EP2248662A1 (en) | 2009-05-01 | 2010-11-10 | Fujifilm Corporation | Metal composite substrate and method of producing the same |
WO2011077899A1 (en) * | 2009-12-25 | 2011-06-30 | 富士フイルム株式会社 | Insulating substrate and light emitting element |
WO2012090824A1 (en) * | 2010-12-27 | 2012-07-05 | 富士フイルム株式会社 | Light reflecting substrate |
WO2014073191A1 (en) * | 2012-11-07 | 2014-05-15 | 富士フイルム株式会社 | Electronic device manufacturing method and laminated body used in electronic device manufacturing method |
-
1998
- 1998-07-30 JP JP10215773A patent/JP2000049372A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299660A (en) * | 2001-03-30 | 2002-10-11 | Kyocera Corp | THIN-FILM CRYSTALLINE Si SOLAR CELL |
JP2009267332A (en) * | 2007-09-28 | 2009-11-12 | Fujifilm Corp | Substrate for solar cell, and solar cell |
EP2248662A1 (en) | 2009-05-01 | 2010-11-10 | Fujifilm Corporation | Metal composite substrate and method of producing the same |
WO2011077899A1 (en) * | 2009-12-25 | 2011-06-30 | 富士フイルム株式会社 | Insulating substrate and light emitting element |
WO2012090824A1 (en) * | 2010-12-27 | 2012-07-05 | 富士フイルム株式会社 | Light reflecting substrate |
WO2014073191A1 (en) * | 2012-11-07 | 2014-05-15 | 富士フイルム株式会社 | Electronic device manufacturing method and laminated body used in electronic device manufacturing method |
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