JP2000035831A - Low skew clock tree circuit using variable threshold voltage transistor - Google Patents

Low skew clock tree circuit using variable threshold voltage transistor

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Publication number
JP2000035831A
JP2000035831A JP10205309A JP20530998A JP2000035831A JP 2000035831 A JP2000035831 A JP 2000035831A JP 10205309 A JP10205309 A JP 10205309A JP 20530998 A JP20530998 A JP 20530998A JP 2000035831 A JP2000035831 A JP 2000035831A
Authority
JP
Japan
Prior art keywords
clock
circuit
threshold voltage
skew
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10205309A
Other languages
Japanese (ja)
Inventor
Masaharu Mizuno
雅春 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP10205309A priority Critical patent/JP2000035831A/en
Publication of JP2000035831A publication Critical patent/JP2000035831A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a clock tree circuit capable of controlling clock skew of a clock tree circuit, reduced in power consumption and low in clock skew. SOLUTION: This clock tree circuit uses a transistor having a threshold voltage variable well structure for a clock element. Here, it has phase comparator circuits 31 to 33 which perform comparison observation of skew values among respective elements 21 to 24 and output differential voltage and charge pump circuits 41 to 43 which make the differential voltage of the circuits 31 to 33 inputs and supply them as well potential to each well terminal of the elements 21 to 24, controls the switching speed of a clock tree circuit by adjusting the threshold voltage of each element 21 to 24 and reduces clock skew.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】クロックを分配するクロック
ツリー回路に関し、特に可変閾値電圧トランジスタを用
いたクロックツリー回路の素子間のクロックスキューに
関する。
The present invention relates to a clock tree circuit for distributing clocks, and more particularly to a clock skew between elements of a clock tree circuit using variable threshold voltage transistors.

【0002】[0002]

【従来の技術】LSIの高集積化と共に回路規模の増大
と、動作速度の高速化が行われている。従来、クロック
を分配するクロックツリー回路の各クロック素子のウエ
ル電位は、図7に示すように共通であり、製造条件等に
依存してクロックツリー回路のチップ内各クロック素子
のスイッチングスピードがばらついた場合、クロックツ
リー回路のクロックスキューが大きくなる欠点を持って
いた。
2. Description of the Related Art As the degree of integration of LSIs increases, the circuit scale increases and the operating speed increases. Conventionally, the well potential of each clock element of a clock tree circuit for distributing clocks is common as shown in FIG. 7, and the switching speed of each clock element in a chip of the clock tree circuit varies depending on manufacturing conditions and the like. In this case, the clock skew of the clock tree circuit is disadvantageously increased.

【0003】[0003]

【発明が解決しようとする課題】各クロック素子のスイ
ッチングスピードが個別に制御ができず、各クロック素
子間のスイッチングスピードが製造条件等に依存してチ
ップ内でばらついた場合、各クロック素子のウエル電位
が共通であり、各クロック素子の閾値電圧、すなわち、
スイッチングスピードを個別に制御することが不可能で
あるので、クロックスキューが大きくなる欠点を持って
いる。
When the switching speed of each clock element cannot be individually controlled and the switching speed between the clock elements varies within a chip depending on manufacturing conditions and the like, the well of each clock element is changed. The potential is common, and the threshold voltage of each clock element, that is,
Since it is impossible to individually control the switching speed, there is a disadvantage that the clock skew increases.

【0004】上記の欠点を解決する半導体装置として特
開平9−92723号公報が開示されている。開示され
た半導体装置は、内部クロック間のスキュー観測回路
と、クロック間で相対的に位相の進んだクロックの負荷
を増加させる負荷増減回路を有し、ばらつき観測回路の
観測値のクロック源の値に近いものから順次検出状態を
固定し、負荷増減回路による内部クロックの負荷を固定
する順序維持回路を有するものである。
Japanese Patent Application Laid-Open No. 9-92723 discloses a semiconductor device which solves the above-mentioned disadvantages. The disclosed semiconductor device has a skew observation circuit between internal clocks, and a load increasing / decreasing circuit for increasing a load of a clock whose phase is relatively advanced between clocks, and a clock source value of an observation value of the variation observation circuit. And a sequence maintaining circuit for fixing the detection state in order from the closest one and fixing the load of the internal clock by the load increasing / decreasing circuit.

【0005】しかし、特開平9−92723号公報に開
示されている半導体装置は、従来のクロックツリー回路
に比較し、付加される回路群が多く、消費電力の点で問
題を有する。
However, the semiconductor device disclosed in Japanese Unexamined Patent Application Publication No. 9-92723 has a problem in terms of power consumption as compared with a conventional clock tree circuit in that a larger number of circuits are added.

【0006】本発明の目的は、 クロックツリー回路の
クロックスキューを制御して、消費電力の少なく、クロ
ックスキューの低いクロックツリー回路を提供すること
である。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a clock tree circuit with low power consumption and low clock skew by controlling the clock skew of the clock tree circuit.

【0007】[0007]

【課題を解決するための手段】本発明の可変閾値電圧ト
ランジスタを用いた低スキュークロックツリー回路は、
クロック素子に閾値電圧可変なウエル構造を持つトラ
ンジスタを用いるクロックツリー回路であって、各クロ
ック素子間のスキュー値を比較観測する比較観測手段
と、比較観測結果から各クロック素子のウエル電位を制
御する制御手段を有し、ウエル電位を制御し閾値電圧を
調整することで、クロックツリー回路のスイッチングス
ピードを制御し、クロックスキューを低減することを特
徴とする。また、各クロック素子間のスキュー値を比較
観測する比較観測手段は、クロック素子間の位相を比較
し、差電圧を出力する位相比較回路であって良い。
According to the present invention, a low skew clock tree circuit using a variable threshold voltage transistor is provided.
A clock tree circuit using a transistor having a well structure with a variable threshold voltage as a clock element, comprising: comparison observation means for comparing and observing a skew value between clock elements; and controlling a well potential of each clock element from the comparison observation result. It has a control means, in which the switching speed of the clock tree circuit is controlled and the clock skew is reduced by controlling the well potential and adjusting the threshold voltage. Further, the comparison and observation means for comparing and observing the skew value between the clock elements may be a phase comparison circuit that compares the phases between the clock elements and outputs a difference voltage.

【0008】また、比較観測結果から各クロック素子の
ウエル電位を制御する制御手段は、位相比較回路の差電
圧を入力としクロック素子のP型MOSトランジスタの
Nウエル端子にウエル電位として供給するチャージポン
プ回路と、位相比較回路の差電圧を入力としクロック素
子のN型MOSトランジスタのPウエル端子にウエル電
位として供給するチャージポンプ回路であって良い。
The control means for controlling the well potential of each clock element based on the comparison observation result is a charge pump which receives the difference voltage of the phase comparison circuit as an input and supplies it as a well potential to the N-well terminal of the P-type MOS transistor of the clock element. It may be a circuit and a charge pump circuit that receives the differential voltage of the phase comparison circuit and supplies the P-well terminal of the N-type MOS transistor of the clock element as a well potential.

【0009】本発明の可変閾値電圧トランジスタを用い
た低スキュークロックツリー回路は、閾値電圧可変なウ
エル構造を持つトランジスタで構成されたクロックツリ
ー回路と、各クロック素子間のクロックスキュー値を比
較観測するクロックスキュー比較観測回路と、前記クロ
ックスキュー比較観測回路の測定結果から各クロック素
子のウエル電位を個別に制御するウエル電位制御回路と
で構成された半導体集積回路で、各クロック素子間のク
ロックスキュー値を比較観測し、その測定結果から各ク
ロック素子のウエル電位をウエル電位制御回路で個別に
制御し閾値電圧を調整することで、各クロック素子のス
イッチングスピードを制御し、他クロック素子とのクロ
ックスキューを低減させる。
A low skew clock tree circuit using a variable threshold voltage transistor according to the present invention compares and observes a clock skew value between clock elements with a clock tree circuit composed of a transistor having a well structure with a variable threshold voltage. A clock skew comparison / observation circuit, and a well potential control circuit for individually controlling a well potential of each clock element based on a measurement result of the clock skew comparison / observation circuit; The switching speed of each clock element is controlled by adjusting the threshold voltage by individually controlling the well potential of each clock element by a well potential control circuit based on the measurement results, and controlling the clock skew with other clock elements. To reduce.

【0010】[0010]

【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。
Next, embodiments of the present invention will be described with reference to the drawings.

【0011】図1は本発明の原理を示す機能ブロック図
で、閾値電圧可変なウエル構造を持つトランジスタで構
成されたクロックツリー回路1と、各クロック素子間の
クロックスキュー値を比較し、電圧に変換するクロック
スキュー比較観測回路2と、クロックスキュー比較観測
回路2の測定結果から各クロック素子のウエル電位を個
別に制御するウエル電位制御回路3とで構成される。
FIG. 1 is a functional block diagram showing the principle of the present invention. A clock tree circuit 1 composed of a transistor having a well structure with a variable threshold voltage is compared with a clock skew value between respective clock elements, and a voltage is calculated. The clock skew comparison / observation circuit 2 for conversion and a well potential control circuit 3 for individually controlling the well potential of each clock element based on the measurement result of the clock skew comparison / observation circuit 2.

【0012】図2は図1の閾値電圧可変なウエル構造を
持つトランジスタで構成されたクロックツリー回路1の
構成を表す論理回路図である。図2において、クロック
供給元25はクロック素子21、22、23、24にク
ロックを分配している。クロック素子21は、図に示す
ように、更に4個のクロック素子にクロックを分配して
いる。ここでは4個のクロック素子にクロックを分配し
ているが、その数に制限されるものではない。
FIG. 2 is a logic circuit diagram showing the configuration of the clock tree circuit 1 composed of transistors having a well structure with variable threshold voltage shown in FIG. In FIG. 2, a clock supply source 25 distributes a clock to clock elements 21, 22, 23, and 24. The clock element 21 distributes a clock to four clock elements as shown in FIG. Here, clocks are distributed to four clock elements, but the number is not limited.

【0013】図3は図2の各クロック素子のトランジス
タレベルの回路図である。本発明のクロックツリーに使
われるクロック素子のウエル電位は、 P型MOSトラ
ンジスタのNウエル端子CTR*Aと、 N型MOSト
ランジスタのPウエル端子CTR*Bとに分離されてお
り、そのウエル電位は個別に制御できるものである。次
に、本発明の実施例を図を参照して説明する。図4は本
発明の第1の実施例の回路構成を示すブロック図、図5
は本発明の第2の実施例の回路構成を示すブロック図、
図6は本発明の第3の実施例の回路構成を示すブロック
図である。
FIG. 3 is a circuit diagram at the transistor level of each clock element of FIG. The well potential of the clock element used in the clock tree of the present invention is separated into an N-well terminal CTR * A of a P-type MOS transistor and a P-well terminal CTR * B of an N-type MOS transistor. It can be controlled individually. Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 4 is a block diagram showing a circuit configuration of the first embodiment of the present invention.
Is a block diagram showing a circuit configuration of a second embodiment of the present invention,
FIG. 6 is a block diagram showing the circuit configuration of the third embodiment of the present invention.

【0014】図4は比較対象となるクロック素子の内の
クロック素子24をベースにして残りの各クロック素子
21、22、23との素子間の位相を比較し、差電圧を
出力する位相比較回路31、32、33と、位相比較回
路の差電圧を入力としクロック素子のP型MOSトラン
ジスタのNウエル端子にウエル電位として供給するチャ
ージポンプ回路41、42、43とにより構成されてい
る。
FIG. 4 shows a phase comparison circuit for comparing the phases between the remaining clock elements 21, 22, and 23 based on the clock element 24 among the clock elements to be compared, and outputting a difference voltage. 31, 32, and 33, and charge pump circuits 41, 42, and 43 that receive the difference voltage of the phase comparison circuit as an input and supply the N-well terminal of the P-type MOS transistor of the clock element as a well potential.

【0015】また、図5は比較対象となるクロック素子
の内のクロック素子24をベースにして残りの各クロッ
ク素子21、22、23との素子間の位相を比較し、差
電圧を出力する位相比較回路31、32、33と、位相
比較回路の差電圧を入力としクロック素子のN型MOS
トランジスタのPウエル端子にウエル電位として供給す
るチャージポンプ回路41、42、43とにより構成さ
れている。
FIG. 5 shows a phase in which the phases between the remaining clock elements 21, 22, and 23 are compared based on the clock element 24 among the clock elements to be compared, and a difference voltage is output. An N-type MOS of a clock element which receives the difference voltage of the comparison circuits 31, 32, 33 and the phase comparison circuit as an input.
It comprises charge pump circuits 41, 42 and 43 for supplying a P-well terminal of the transistor as a well potential.

【0016】更にまた、図6は比較対象となるクロック
素子の内クロック素子24をベースにして残りの各クロ
ック素子21、22、23との素子間の位相を比較し、
差電圧を出力する位相比較回路31〜36と、位相比較
回路31、33、35の差電圧を入力としクロック素子
21、22、23のP型MOSトランジスタのNウエル
端子にウエル電位として供給するチャージポンプ回路4
1、43、45と、位相比較回路32、34、36の差
電圧を入力としクロック素子21、22、23のN型M
OSトランジスタのPウエル端子にウエル電位として供
給するチャージポンプ回路42、44、46により構成
されている。
Further, FIG. 6 compares the phases between the remaining clock elements 21, 22, and 23 based on the clock element 24 among the clock elements to be compared.
The phase comparators 31 to 36 for outputting a differential voltage, and the charge supplied with the differential voltage of the phase comparators 31, 33, and 35 to be supplied as well potential to the N-well terminals of the P-type MOS transistors of the clock elements 21, 22, and 23. Pump circuit 4
1, 43, 45 and the differential voltages of the phase comparison circuits 32, 34, 36 as inputs, and the N-type M of the clock elements 21, 22, 23
The charge pump circuit 42, 44, 46 supplies a P-well terminal of the OS transistor as a well potential.

【0017】上記で説明した構成を持つクロックツリー
回路1は、図1に戻り、各クロック素子間のクロックス
キュー値を位相比較回路に相当するクロックスキュー比
較観測回路2で観測し、その測定結果から各クロック素
子のウエル電位をチャージポンプ回路に相当するウエル
電位制御回路3で個別に制御し閾値電圧の調整を行うこ
とで各クロック素子のスイッチングスピードを制御し、
他のクロック素子とのクロックスキューを低減させる。
Returning to FIG. 1, the clock tree circuit 1 having the configuration described above observes the clock skew value between the clock elements with the clock skew comparison observation circuit 2 corresponding to the phase comparison circuit, and from the measurement result. The switching speed of each clock element is controlled by individually controlling the well potential of each clock element by a well potential control circuit 3 corresponding to a charge pump circuit and adjusting the threshold voltage.
Clock skew with another clock element is reduced.

【0018】[0018]

【発明の効果】本発明によれば、閾値電圧可変なウエル
構造を持つトランジスタで構成したクロックツリー回路
は、各クロック素子間のクロックスキュー値を比較観測
し、その測定結果から各クロック素子のウエル電位を個
別に制御し閾値電圧を調整することで、各クロック素子
のスイッチングスピードを制御し、他クロック素子との
クロックスキューを低減させることができる効果があ
る。
According to the present invention, a clock tree circuit composed of a transistor having a well structure with a variable threshold voltage compares and observes a clock skew value between clock elements, and from the measurement result, the well of each clock element is measured. By individually controlling the potential and adjusting the threshold voltage, the switching speed of each clock element can be controlled, and the clock skew with other clock elements can be reduced.

【0019】また、本発明によれば、閾値電圧可変なウ
エル構造を持つトランジスタで構成したクロックツリー
回路は、直接クロックスキューを測定し、制御するた
め、製造条件の変動等にも依存しない、低スキューなク
ロックツリー回路を実現することができる効果がある。
Further, according to the present invention, a clock tree circuit composed of a transistor having a well structure with a variable threshold voltage directly measures and controls the clock skew. There is an effect that a skewed clock tree circuit can be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示す機能ブロック図であ
る。
FIG. 1 is a functional block diagram showing one embodiment of the present invention.

【図2】図1の閾値電圧可変なウエル構造を持つトラン
ジスタで構成されたクロックツリー回路1の構成を表す
論理回路図である。
FIG. 2 is a logic circuit diagram illustrating a configuration of a clock tree circuit 1 including a transistor having a well structure with a variable threshold voltage in FIG.

【図3】図2の各クロック素子のトランジスタレベルの
回路図である。
FIG. 3 is a circuit diagram of a transistor level of each clock element of FIG. 2;

【図4】本発明の第1の実施例の回路構成を示すブロッ
ク図である。
FIG. 4 is a block diagram showing a circuit configuration of the first embodiment of the present invention.

【図5】本発明の第2の実施例の回路構成を示すブロッ
ク図である。
FIG. 5 is a block diagram showing a circuit configuration of a second embodiment of the present invention.

【図6】本発明の第3の実施例の回路構成を示すブロッ
ク図である。
FIG. 6 is a block diagram showing a circuit configuration according to a third embodiment of the present invention.

【図7】従来の一実施例を示す機能ブロック図である。FIG. 7 is a functional block diagram showing a conventional example.

【符号の説明】[Explanation of symbols]

1 VT−CMOSを用いたクロックツリー回路 2 クロックスキュー比較観測回路 3 ウエル電位制御回路 21、22、23、24 クロック素子 25 クロック供給元クロック素子 31、32、33、34、35、36 位相比較回路 41、42、43、44、45、46 チャージポン
プ回路
Reference Signs List 1 Clock tree circuit using VT-CMOS 2 Clock skew comparison observation circuit 3 Well potential control circuit 21, 22, 23, 24 Clock element 25 Clock supply source clock element 31, 32, 33, 34, 35, 36 Phase comparison circuit 41, 42, 43, 44, 45, 46 charge pump circuit

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 クロック素子に閾値電圧可変なウエル構
造を持つトランジスタを用い、クロックツリーによって
クロックを分配するクロックツリー回路において、 各クロック素子間のスキュー値を比較観測する比較観測
手段と、 前記比較観測結果から各クロック素子のウエル電位を制
御する制御手段を有し、 前記制御手段によりウエル電位を制御し閾値電圧を調整
することで、クロックツリー回路のスイッチングスピー
ドを制御し、クロックスキューを低減することを特徴と
する可変閾値電圧トランジスタを用いた低スキュークロ
ックツリー回路。
1. A clock tree circuit that uses a transistor having a well structure with a variable threshold voltage as a clock element and distributes clocks according to a clock tree, wherein the comparison and observation means compares and observes a skew value between the clock elements. A control means for controlling a well potential of each clock element from the observation result; controlling the well potential by the control means to adjust a threshold voltage, thereby controlling a switching speed of the clock tree circuit and reducing clock skew; A low skew clock tree circuit using a variable threshold voltage transistor.
【請求項2】 前記各クロック素子間のスキュー値を比
較観測する比較観測手段が、 クロック素子間の位相を比較し、差電圧を出力する位相
比較回路である請求項1記載の可変閾値電圧トランジス
タを用いた低スキュークロックツリー回路。
2. The variable threshold voltage transistor according to claim 1, wherein said comparison and observation means for comparing and observing a skew value between each clock element is a phase comparison circuit for comparing phases between clock elements and outputting a difference voltage. Low skew clock tree circuit using.
【請求項3】 前記各クロック素子間のスキュー値を比
較観測する比較観測手段が、 比較対象となるクロック素子の内の任意のクロック素子
をベースにして残りの各クロック素子との素子間の位相
を比較し、差電圧を出力することを特徴とする請求項1
または2記載の可変閾値電圧トランジスタを用いた低ス
キュークロックツリー回路。
3. A comparison / observation means for comparing and observing a skew value between the clock elements, wherein a phase between the clock elements based on an arbitrary clock element among the clock elements to be compared is determined. 2. The method according to claim 1, wherein a difference voltage is output.
Or a low skew clock tree circuit using the variable threshold voltage transistor according to 2.
【請求項4】 前記比較観測結果から各クロック素子の
ウエル電位を制御する制御手段が、 前記位相比較回路の差電圧を入力としクロック素子のP
型MOSトランジスタのNウエル端子にウエル電位とし
て供給するチャージポンプ回路である請求項1乃至3の
何れかに記載の可変閾値電圧トランジスタを用いた低ス
キュークロックツリー回路。
4. A control means for controlling a well potential of each clock element based on the comparison observation result, wherein the difference voltage of the phase comparison circuit is input and the P element of the clock element is controlled.
4. A low skew clock tree circuit using a variable threshold voltage transistor according to claim 1, which is a charge pump circuit for supplying a well potential to an N-well terminal of a type MOS transistor.
【請求項5】 前記比較観測結果から各クロック素子の
ウエル電位を制御する制御手段が、 前記位相比較回路の差電圧を入力としクロック素子のN
型MOSトランジスタのPウエル端子にウエル電位とし
て供給するチャージポンプ回路である請求項1、乃至3
の何れかに記載の可変閾値電圧トランジスタを用いた低
スキュークロックツリー回路。
5. A control means for controlling a well potential of each clock element based on the comparison observation result, comprising:
4. A charge pump circuit for supplying a well potential to a P-well terminal of a type MOS transistor.
A low skew clock tree circuit using the variable threshold voltage transistor according to any one of the above.
【請求項6】 前記比較観測結果から各クロック素子の
ウエル電位を制御する制御手段が、 前記位相比較回路の差電圧を入力としクロック素子のP
型MOSトランジスタのNウエル端子にウエル電位とし
て供給するチャージポンプ回路と、 前記位相比較回路の差電圧を入力としクロック素子のN
型MOSトランジスタのPウエル端子にウエル電位とし
て供給するチャージポンプ回路を有する請求項1乃至3
の何れかに記載の可変閾値電圧トランジスタを用いた低
スキュークロックツリー回路。
6. A control means for controlling a well potential of each clock element based on the comparison observation result, comprising:
A charge pump circuit for supplying a well potential to an N-well terminal of a type MOS transistor;
4. A charge pump circuit for supplying a well potential to a P-well terminal of a type MOS transistor.
A low skew clock tree circuit using the variable threshold voltage transistor according to any one of the above.
JP10205309A 1998-07-21 1998-07-21 Low skew clock tree circuit using variable threshold voltage transistor Pending JP2000035831A (en)

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JP10205309A JP2000035831A (en) 1998-07-21 1998-07-21 Low skew clock tree circuit using variable threshold voltage transistor

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JP2000035831A true JP2000035831A (en) 2000-02-02

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