JP2000030548A - Low noise coaxial cable and manufacture thereof - Google Patents
Low noise coaxial cable and manufacture thereofInfo
- Publication number
- JP2000030548A JP2000030548A JP10216484A JP21648498A JP2000030548A JP 2000030548 A JP2000030548 A JP 2000030548A JP 10216484 A JP10216484 A JP 10216484A JP 21648498 A JP21648498 A JP 21648498A JP 2000030548 A JP2000030548 A JP 2000030548A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- coaxial cable
- outer conductor
- around
- semiconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Communication Cables (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、低雑音同軸ケ−ブ
ルおよびその製造方法に係わり、特に良好な可撓性を有
すると共に、端末処理が容易な低雑音同軸ケ−ブルおよ
びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-noise coaxial cable and a method of manufacturing the same, and more particularly to a low-noise coaxial cable having good flexibility and easy terminal processing and a method of manufacturing the same. .
【0002】[0002]
【従来の技術】従来、例えば、同軸ケ−ブルの屈曲ある
いは機械的振動などによって同軸ケ−ブルの外部導体と
誘電体との間に摺動が生じ、その結果、静電荷が発生し
て同軸ケ−ブルの伝送特性に悪影響を与えることがあっ
た。この悪影響を防止するために、低雑音同軸ケーブル
が提案されているが、この低雑音同軸ケーブルは、同軸
ケ−ブルの外部導体層と誘電体層との間に半導電層を設
け、さらにこれらの各層間で摺動が生じないように各層
相互間を強固に密着して構成していたので同軸ケ−ブル
の可撓性が悪く、しかもその強固な密着のために、同軸
ケ−ブルの端末処理の際に行われる半導電層の除去作業
も困難で時間がかかり、その端末処理作業が煩わしかっ
た。2. Description of the Related Art Conventionally, for example, bending between a coaxial cable and mechanical vibration causes sliding between an outer conductor of the coaxial cable and a dielectric material. In some cases, the transmission characteristics of the cable were adversely affected. In order to prevent this adverse effect, a low-noise coaxial cable has been proposed. In this low-noise coaxial cable, a semiconductive layer is provided between an outer conductor layer and a dielectric layer of the coaxial cable, and furthermore, these cables are provided. In order to prevent sliding between the layers, the layers are tightly adhered to each other so that the coaxial cable is inferior in flexibility. The work of removing the semiconductive layer, which is performed during the terminal treatment, is also difficult and time-consuming, and the terminal treatment is troublesome.
【0003】上記したような低雑音同軸ケ−ブルにおい
て、例えば、これまで高速信号伝送が可能な同軸ケ−ブ
ルが提案されているが、このような同軸ケーブルでは、
内部導体を被覆する誘電体として、誘電率の低いポリテ
トラフルオロエチレンを用いて内部導体の周囲を被覆
し、この誘電体と外部導体との間に設けられる半導電層
としては、多孔質ポリテトラフルオロエチレン製テープ
の多孔部分に導電性の炭素粉末あるいは炭素繊維を混入
して半導電性にしたテープを誘電体の周囲に巻回し、そ
の後、焼結し完全に融着して低雑音同軸ケーブルを構成
しているために、誘電体と半導電性にしたテープとの間
が強固に固着し、その結果、このケーブルの可撓性が悪
く、しかもその端末処理を行う際にも、半導電層を誘電
体から削除するのに刃物あるいは切削具等を用いて時間
がかかり、その作業も困難であった。特に、上記した低
雑音同軸ケーブルの径が細いものでは、その端末処理に
非常に時間がかかり、その作業も非常に困難となるとい
う問題点を有していた。[0003] Among the low-noise coaxial cables described above, for example, coaxial cables capable of high-speed signal transmission have been proposed.
As a dielectric covering the inner conductor, polytetrafluoroethylene having a low dielectric constant is used to cover the periphery of the inner conductor, and a semiconductive layer provided between the dielectric and the outer conductor is made of porous polytetrafluoroethylene. Low-noise coaxial cable with a semi-conductive tape wound by mixing conductive carbon powder or carbon fiber into the porous portion of a fluoroethylene tape and then sintering and fusing completely. Therefore, the dielectric material and the tape made semiconductive are firmly adhered to each other. As a result, the flexibility of the cable is poor, and when the cable is subjected to the terminal treatment, the semiconductive material is hardly adhered. It took time to remove the layer from the dielectric using a blade or a cutting tool, and the operation was difficult. In particular, when the diameter of the low-noise coaxial cable is small, there is a problem that it takes a very long time to process the terminal and the operation becomes very difficult.
【0004】[0004]
【発明が解決しようとする課題】したがって、本発明
は、上記した従来技術の問題点を解決するためになされ
たもので、その目的は、高速信号伝送が可能で、可撓性
を損なうことなく、しかも端末処理が容易な低雑音同軸
ケーブルを提供することにある。SUMMARY OF THE INVENTION Accordingly, the present invention has been made to solve the above-mentioned problems of the prior art, and an object thereof is to enable high-speed signal transmission without impairing flexibility. Another object of the present invention is to provide a low-noise coaxial cable in which terminal processing is easy.
【0005】[0005]
【課題を解決するための手段】上記目的は、本願発明に
係わる低雑音同軸ケ−ブルおよびその製造方法によって
達成される。すなわち、要約すれば、本発明は、内部導
体と、この内部導体の周囲に被覆される誘電体層と、こ
の誘電体層の周囲に形成される塑性変形可能な半導電層
と、この半導電層の周囲に形成される外部導体層と、こ
の外部導体層の周囲に被覆されるジャケットを備える低
雑音同軸ケ−ブルにおいて、前記外部導体層が前記半導
電層に埋設されて前記誘電体層に密着していることを特
徴とする低雑音同軸ケ−ブルであり、また、本願発明
は、内部導体を準備する工程と、この内部導体の周囲に
誘電体層を被覆する工程と、この誘電体層の周囲に塑性
変形可能な半導電層を形成する工程と、この半導電層の
周囲に外部導体層を形成する工程と、この外部導体層を
外部からしごいて前記外部導体層を前記半導電層に埋設
して前記外部導体層および前記半導電層を前記誘電体層
に密着させる工程と、前記外部導体層の周囲にジャケッ
トを被覆する工程とを備えることを特徴とする低雑音同
軸ケ−ブルの製造方法である。The above object is achieved by a low-noise coaxial cable and a method of manufacturing the same according to the present invention. That is, in summary, the present invention provides an inner conductor, a dielectric layer coated around the inner conductor, a plastically deformable semiconductive layer formed around the dielectric layer, In a low-noise coaxial cable having an outer conductor layer formed around a layer and a jacket covered around the outer conductor layer, the outer conductor layer is embedded in the semiconductive layer to form the dielectric layer. A low-noise coaxial cable characterized by being in close contact with a conductor, a step of preparing an inner conductor, a step of coating a dielectric layer around the inner conductor, and a step of providing a dielectric layer. Forming a plastically deformable semiconductive layer around the body layer, forming an external conductor layer around the semiconductive layer, and squeezing the external conductor layer from outside to form the external conductor layer. The external conductor layer and the semiconductor layer are embedded in a semiconductive layer. A step of the conductive layer in close contact with the dielectric layer, the outer conductor layer low noise coax, characterized in that it comprises a step of coating a jacket around the - is a manufacturing method of Bull.
【0006】[0006]
【発明の実施の形態】本発明による低雑音同軸ケーブル
1では、半導電層を焼結させることなく、外部導体層を
外部からしごいて、この外部導体層を、未焼成もしくは
半焼成のEPTFE製テープのため塑性変形可能な半導
電層に埋設させ、その結果、半導電層および外部導体層
を誘電体層に密着させて、そこに維持しているので、そ
の端末処理を行う場合には、テープ巻回により形成され
ている半導電層を誘電体層から巻きほどくことにより、
特別な工具あるいは装置を必要とすることなく、容易に
除去することができ、端末処理が極めて容易に行える。
さらに、この低雑音同軸ケーブルでは、上記したよう
に、半導電層が誘電体層に融着する焼成が行われること
なく、したがって可撓性も損なわれることがない。DESCRIPTION OF THE PREFERRED EMBODIMENTS In a low-noise coaxial cable 1 according to the present invention, an external conductor layer is squeezed from outside without sintering a semiconductive layer, and this external conductor layer is unfired or semi-fired EPTFE. When embedded in a plastically deformable semiconductive layer for tape making, as a result, the semiconductive layer and the outer conductive layer are brought into close contact with the dielectric layer and are maintained there. By unwinding the semiconductive layer formed by tape winding from the dielectric layer,
It can be easily removed without the need for special tools or equipment, and terminal processing can be performed very easily.
Further, in this low-noise coaxial cable, as described above, the firing for fusing the semiconductive layer to the dielectric layer is not performed, and therefore, the flexibility is not impaired.
【0007】[0007]
【実施例】本発明を、その一実施例に基づいて添付図面
を参照しつつ以下に述べる。図1は、本発明による低雑
音同軸ケーブルの一実施例の断面図である。図1を参照
すると、この図1には、本発明による低雑音同軸ケーブ
ル10が示されており、この低雑音同軸ケーブル10
は、内部導体2(本実施例では、外径0.17mmの銀
めっき銅被鋼線の7本撚り)の周囲に誘電率の低いポリ
テトラフルオロエチレンを押出し被覆して形成された誘
電体層3を備えている(本実施例では、外径1.3m
m)。BRIEF DESCRIPTION OF THE DRAWINGS The invention will be described below on the basis of an embodiment with reference to the accompanying drawings. FIG. 1 is a sectional view of one embodiment of a low noise coaxial cable according to the present invention. Referring to FIG. 1, there is shown a low noise coaxial cable 10 according to the present invention.
Is a dielectric layer formed by extruding and coating polytetrafluoroethylene having a low dielectric constant around the inner conductor 2 (in this embodiment, seven stranded silver-plated copper-coated steel wires having an outer diameter of 0.17 mm). 3 (in this embodiment, the outer diameter is 1.3 m).
m).
【0008】この誘電体層3の周囲には多孔質ポリテト
ラフルオロエチレン(EPTFE)製テープの多孔部分
に導電性の炭素粉末あるいは炭素繊維を混入して半導電
性にした未焼成もしくは半焼成のEPTFE製テープ
(本実施例では、幅5mm、厚さ0.1mm)を巻回す
ることによって半導電層4(本実施例では、厚さ0.2
mm)が形成され、この半導電層4の周囲には導体素線
を横巻きにした横巻きシールドの外部導体層5(本実施
例では、外径0.12mmの銀めっき軟銅線43本を用
い、外径1.84mm)が形成されている。Around the dielectric layer 3, an unfired or semi-fired semiconductive carbon fiber or carbon fiber is mixed into a porous portion of a porous polytetrafluoroethylene (EPTFE) tape to make it semiconductive. By winding an EPTFE tape (5 mm in width and 0.1 mm in thickness in this embodiment), the semiconductive layer 4 (0.2 mm in thickness in this embodiment) is formed.
mm), and around the semiconductive layer 4, an outer conductor layer 5 (in this embodiment, 43 silver-plated soft copper wires having an outer diameter of 0.12 mm) of a horizontally wound shield in which a conductor element wire is horizontally wound. Used and an outer diameter of 1.84 mm).
【0009】その後、ダイス(図示せず)等を用いて、
この形成された外部導体層5を外部からしごいて、この
外部導体層5を、未焼成もしくは半焼成のEPTFE製
テープのため塑性変形可能な半導電層4に埋設させ、そ
の結果、半導電層4および外部導体層5を誘電体層3に
密着させて、そこに維持し、その後、さらにこの外部導
体層5の周囲にテトラフルオロエチレンーヘキサフルオ
ロプロピレン共重合体(FEP)を被覆してジャケット
6(本実施例では、厚さ0.2mm)を形成することに
よって低雑音同軸ケーブル10を構成している。Then, using a die (not shown) or the like,
The formed outer conductor layer 5 is squeezed from the outside, and the outer conductor layer 5 is embedded in the plastically deformable semiconductive layer 4 for an unfired or semi-fired EPTFE tape. The layer 4 and the outer conductor layer 5 are adhered to and maintained on the dielectric layer 3, and then the outer conductor layer 5 is further covered with a tetrafluoroethylene-hexafluoropropylene copolymer (FEP). The low-noise coaxial cable 10 is formed by forming the jacket 6 (in this embodiment, the thickness is 0.2 mm).
【0010】このようにして構成された上記低雑音同軸
ケーブル10において、その端末処理を行う場合には、
ケーブル10の端部から所望する所定長さのジャケット
6を除去した後、半導電層4に埋設されている外部導体
層5を半導電層4から取り除いて束ね、そして所定方向
へ折り返し、その後、テープ巻回により形成されている
半導電層4を巻きほどくことにより、埋設された外部導
体5によって誘電体層3に押しつけられ密着していた、
所謂生テープ、すなわち焼成されていない未焼成もしく
は半焼成のEPTFE製テープの半導電層4を誘電体層
3から、特別な工具あるいは装置を必要とすることな
く、容易に除去することができ、端末処理が極めて容易
に行える。When the terminal processing is performed in the low noise coaxial cable 10 configured as described above,
After removing the jacket 6 of a desired length from the end of the cable 10, the outer conductor layer 5 embedded in the semiconductive layer 4 is removed from the semiconductive layer 4 and bundled, and then folded in a predetermined direction. By unwinding the semiconductive layer 4 formed by tape winding, the semiconductive layer 4 was pressed against and adhered to the dielectric layer 3 by the embedded external conductor 5.
The semiconductive layer 4 of a so-called green tape, ie, an unfired or unfired EPTFE tape, can be easily removed from the dielectric layer 3 without requiring any special tools or equipment, Terminal processing can be performed very easily.
【0011】さらに、この低雑音同軸ケーブル10で
は、未焼成もしくは半焼成のEPTFE製テープの半導
電層4が、外部導体層5の外部からのしごきにより、外
部導体層5と共に、誘電体層3に密着されて、そこに維
持されるので、誘電体層3に融着する焼成が行われるこ
となく、したがって可撓性も損なわれることがない。Further, in the low-noise coaxial cable 10, the semiconductive layer 4 of the unfired or semi-fired EPTFE tape is fixed to the dielectric layer 3 together with the outer conductor layer 5 by ironing from the outside of the outer conductor layer 5. , And is maintained there, so that firing for fusing to the dielectric layer 3 is not performed, and therefore, flexibility is not impaired.
【0012】なお、本願発明による上記構成の低雑音同
軸ケーブルの雑音電荷量を測定するために、ケーブル長
さ2mを試料として、これに振幅5mm、周波数20H
zの振動を加えたところ、雑音電荷量は7pC(ピコ
クーロン)であった。比較例として、本願発明の半導電
層4を備えないものを、同条件下で雑音電荷量の測定を
行ったところ、雑音電荷量は1000pC(ピコ クー
ロン)であり、本願発明による低雑音同軸ケーブルの雑
音電荷量が充分低減されていることが理解されるであろ
う。In order to measure the noise charge of the low-noise coaxial cable having the above-described structure according to the present invention, a cable having a length of 2 m was used as a sample, and an amplitude of 5 mm and a frequency of 20 H were used.
When a vibration of z was applied, the noise charge was 7 pC (pico
Coulomb). As a comparative example, when the noise charge amount was measured under the same conditions for a device without the semiconductive layer 4 of the present invention, the noise charge amount was 1000 pC (pico-coulomb). It can be understood that the noise charge amount of the .sigma.
【0013】[0013]
【発明の効果】以上説明してきたように、本発明の低雑
音同軸ケーブルによれば、誘電体層および半導電層に誘
電率の低いポリテトラフルオロエチレンを用いているの
で高速信号伝送が可能であり、しかも半導電層を誘電体
層に焼成することがないので、半導電層を誘電体層か
ら、特別な工具あるいは装置を必要とすることなく、容
易に除去することができ、端末処理が極めて容易に行え
ると共に、可撓性も損なわれることがないという効果を
奏する。As described above, according to the low-noise coaxial cable of the present invention, high-speed signal transmission is possible because polytetrafluoroethylene having a low dielectric constant is used for the dielectric layer and the semiconductive layer. In addition, since the semiconductive layer is not fired into the dielectric layer, the semiconductive layer can be easily removed from the dielectric layer without requiring any special tools or equipment, and the terminal treatment can be performed. This is very easy to perform, and also has the effect of not impairing the flexibility.
【0014】[0014]
【図1】本発明による低雑音同軸ケーブルの一実施例の
断面図である。FIG. 1 is a sectional view of one embodiment of a low noise coaxial cable according to the present invention.
2:内部導体、 3:誘電体層、
4:半導電層、 5:外部導体層、
6:ジャケット、 10:低雑音同軸ケ
ーブル。2: internal conductor, 3: dielectric layer,
4: semiconductive layer, 5: outer conductive layer,
6: jacket, 10: low noise coaxial cable.
Claims (2)
される誘電体層と、この誘電体層の周囲に形成される塑
性変形可能な半導電層と、この半導電層の周囲に形成さ
れる外部導体層と、この外部導体層の周囲に被覆される
ジャケットを備える低雑音同軸ケ−ブルにおいて、前記
外部導体層が前記半導電層に埋設されて前記誘電体層に
密着していることを特徴とする低雑音同軸ケ−ブル。1. An inner conductor, a dielectric layer coated around the inner conductor, a plastically deformable semiconductive layer formed around the dielectric layer, and a semiconductive layer formed around the semiconductive layer. In the low-noise coaxial cable provided with an outer conductor layer to be formed and a jacket covered around the outer conductor layer, the outer conductor layer is embedded in the semiconductive layer and is in close contact with the dielectric layer. A low-noise coaxial cable characterized in that:
体の周囲に誘電体層を被覆する工程と、この誘電体層の
周囲に塑性変形可能な半導電層を形成する工程と、この
半導電層の周囲に外部導体層を形成する工程と、この外
部導体層を外部からしごいて前記外部導体層を前記半導
電層に埋設して前記外部導体層および前記半導電層を前
記誘電体層に密着させる工程と、前記外部導体層の周囲
にジャケットを被覆する工程とを備えることを特徴とす
る低雑音同軸ケ−ブルの製造方法。2. A step of preparing an inner conductor, a step of coating a dielectric layer around the inner conductor, a step of forming a plastically deformable semiconductive layer around the dielectric layer, Forming an outer conductor layer around the conductive layer, and squeezing the outer conductor layer from outside to embed the outer conductor layer in the semi-conductive layer to form the outer conductor layer and the semi-conductive layer into a dielectric material. A method for producing a low-noise coaxial cable, comprising the steps of: adhering to a layer; and coating a jacket around the outer conductor layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21648498A JP4136097B2 (en) | 1998-07-14 | 1998-07-14 | Low noise coaxial cable and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21648498A JP4136097B2 (en) | 1998-07-14 | 1998-07-14 | Low noise coaxial cable and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000030548A true JP2000030548A (en) | 2000-01-28 |
JP4136097B2 JP4136097B2 (en) | 2008-08-20 |
Family
ID=16689162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21648498A Expired - Fee Related JP4136097B2 (en) | 1998-07-14 | 1998-07-14 | Low noise coaxial cable and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4136097B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005098874A1 (en) * | 2004-04-06 | 2005-10-20 | Junkosha Inc. | Coaxial cable |
JP2010149467A (en) * | 2008-12-26 | 2010-07-08 | Seiko Epson Corp | Ejection inspection device, fluid ejector, and method of working shielded cable |
-
1998
- 1998-07-14 JP JP21648498A patent/JP4136097B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005098874A1 (en) * | 2004-04-06 | 2005-10-20 | Junkosha Inc. | Coaxial cable |
JP2005302309A (en) * | 2004-04-06 | 2005-10-27 | Junkosha Co Ltd | Coaxial cable |
JP4729751B2 (en) * | 2004-04-06 | 2011-07-20 | 株式会社潤工社 | coaxial cable |
JP2010149467A (en) * | 2008-12-26 | 2010-07-08 | Seiko Epson Corp | Ejection inspection device, fluid ejector, and method of working shielded cable |
Also Published As
Publication number | Publication date |
---|---|
JP4136097B2 (en) | 2008-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5107076A (en) | Easy strip composite dielectric coaxial signal cable | |
JP2017004905A (en) | High speed transmission cable and production method thereof | |
JP3671729B2 (en) | High frequency coaxial cable | |
JP2000030548A (en) | Low noise coaxial cable and manufacture thereof | |
JPH11176527A (en) | Connector connection structure | |
JP3032624U (en) | Coaxial cable with shape retention | |
US4006286A (en) | High-voltage cable joint with conductive means to decrease electric field intensity therein | |
JP2976816B2 (en) | Semi-rigid coaxial cable | |
JP3592083B2 (en) | Fine coaxial cable with good terminal workability and method of manufacturing the same | |
JP3293913B2 (en) | Manufacturing method of high frequency coaxial cable | |
JP3618809B2 (en) | Shielded thin-diameter insulating tube and manufacturing method thereof | |
JP3596726B2 (en) | Coaxial cable with easy terminal processing | |
JP2004119240A (en) | Flexible high-frequency coaxial cable | |
JP3018917B2 (en) | Multiple shielded wires | |
JP7097277B2 (en) | How to form a power cable termination connection and a power cable termination connection | |
JP2003257258A (en) | Coaxial cable | |
JP2639649B2 (en) | Method of forming connection part of power cable | |
JP4491971B2 (en) | Interface cable and manufacturing method thereof | |
JP2804688B2 (en) | Processing method of terminal connection part of compact type CV cable | |
JPH06333762A (en) | Choke coil, its manufacturing method, and hybrid integrated circuit | |
JP3042164B2 (en) | Heat resistant thin coaxial cable | |
JP2003174718A (en) | Tape-wound joint of plastic insulated power cable | |
JPH11213776A (en) | Thin coaxial cable | |
JPH069382Y2 (en) | Speaker cord | |
JPH0877843A (en) | High frequency insulated cable |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050523 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080115 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080314 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080527 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080603 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110613 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120613 Year of fee payment: 4 |
|
LAPS | Cancellation because of no payment of annual fees |