JP2000023466A - Inverter unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the high-speed switching elements of an inverter unit from damaging, by suppressing their current changes caused by the variations of their power supply voltages and their circuit-breaks. SOLUTION: In an inverter unit having a control portion 3, power supply portion 4, and reverse-conversion portion 2 and for converting a DC power into an AC power, the drive voltages of high-speed switching elements S1, S2,...S6 fed from their drive circuits 5a,...9b are adjusted in the cases of protecting the high-speed switching elements S1, S2,...S6 of the reverse-conversion portion 2 from their overcurrents and short-circuits. Thereby, as to not only the high-speed switching elements with generative abnormalities but also the other high-speed switching elements, their current changes caused by the variations of their power supply voltages and their circuit-breaks are suppressed quickly to make protectable the high-speed switching elements S1, S2,...S6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inverter device, and particularly to a high speed switching device for a main circuit portion of the inverter device, which is excellent in overcurrent protection and short circuit protection. The present invention relates to an inverter device having characteristics.

[0002]

2. Description of the Related Art First, a conventional inverter device will be described with reference to FIG. FIG. 5 is an explanatory diagram of a general three-phase bridge circuit inverter device. As shown in FIG. 5, the inverter device includes a three-phase converter 1 for converting AC power to DC power, a three-phase inverse converter 2 connected to the converter 1 and converting the DC output to AC power. A control unit 3 for controlling the three-phase inverse conversion unit 2;
And a AC power supply for supplying AC power to the three-phase converter unit 1.

The inverse converter 2 of the three-phase bridge circuit inverter device will be described in detail. U, V, W of the inverse converter 2
Three-phase bridge circuit consisting of a phase mainly elements S ₁ and a diode D _1, the main element S ₃ and the diode D _3, constitute the upper arm circuit with the main elements S ₅ and the diode D _5, the main elements S ₂ and the diode D _2, the main element S ₄ and the diode D _4, constitute a lower arm circuits in the main device S ₆ and the diode D _6.

[0004] As shown, high-speed switching devices of U-phase upper arm, the main element S _1, Insulated Gate Bipola
r Trasistor (IGBT) is used (hereinafter, main element S ₁
Is referred to as an IGBTS ₁ ), and the IGBTS ₁ is configured using a diode D ₁ as an FWD (abbreviation for FlyWheel Diode, hereinafter the same) connected in anti-parallel. Similarly, the high-speed switching element of the upper arm of the V and W phases is composed of the IGBTS ₃ and the diode D ₃ , and the IGBTS ₅ and the diode D ₅ .
The high-speed switching element in the lower arm of the V and W phases
TS ₂ ··· S _4, S ₆ and the diode D ₂ ··· D _4, is composed of a D _6.

Further, a high-speed switching element including the upper arm IGBTS ₁ and a diode D ₁ and a high-speed switching element including the lower arm IGBTS ₂ and a diode D ₂ are connected in series. The U-phase output terminal is drawn out. Similarly, the V and W phases are configured, and the V and W phase output terminals are drawn out. The opposite sides of the U, V, and W phase output terminals of the two sets of high-speed switching elements constituting the respective U, V, and W phases are connected to each other. Is connected to one of the external terminals of the converter unit 1, and the other connection line is connected to another of the external terminals of the converter unit.

The upper arm and the lower arm have respective I
GBTS ₁ , IGBTS ₃ , IGBTS ₅ , IGBTS ₂ ,
The IGBTS ₄ and the IGBTS ₆ are respectively connected to the driving circuit 5a,
The driving circuits 7a, 9a, 5b, 7b, and 9b are driven by the driving circuits 5a and 7b.
a, 9a, 5b, 7b, 9b each have a PWM
(Pulse Width Modulation) control unit 3 that outputs a signal
And a power supply circuit 4 for supplying a drive voltage. Although the smoothing capacitor 30 is provided in front of the inverse converter 2 in parallel with the U, V, and W phases, it may be arranged in parallel in the latter stage of the converter 1.

[0007] Conventionally, as an abnormal phenomenon of the high-speed switching element, both in-phase IGBTS ₁ and IGBTS ₂ are O
When N, the converter unit 1 is short-circuited, so that the ON and OFF of both are always reversed, and the control unit 3 controls so that a dead time occurs between the ON and OFF signals of both. Have been. However, since the inter-phase short-circuit shown in FIG. 6 cannot be covered by the control of the control unit 3, power supply protection means must be considered.

The protection of the power supply in the above-mentioned short circuit between phases will be described with reference to FIGS. 6 and 7. FIG. FIG. 6 is an explanatory diagram of an inter-phase short circuit of the inverter device of the general three-phase bridge circuit of FIG.
FIG. 8 is a VCE-Ic characteristic diagram of the IGBT of the general three-phase bridge circuit inverter device shown in FIG.
FIG. 6 is an output current diagram of the general three-phase bridge circuit inverter device of FIG. 5 when an inter-phase short circuit occurs. Now, when an interphase short circuit occurs between the V phase and the W phase, the short circuit current I is limited by the wiring inductance L, as shown in FIG.

FIG. 7A is an output current diagram of the general three-phase bridge circuit inverter device shown in FIG. 5 when the phases are short-circuited. FIG. 7B is a diagram showing the gate voltage of the IGBTS _{3 in} FIG. FIG. The gate voltage of the IGBTS ₃ is set to about 15 V, which is two to three times the threshold voltage and is equal to or lower than the rated gate-emitter.

Now, as shown in FIG. 7B, V
A short-circuit between phases occurs at time t ₁ between the phase and the W phase, and the output current increases as shown in FIG. 7A. When the output current reaches a predetermined level, the drive circuit is detected by detecting the increased output current. The gate voltage is gradually reduced through 5a.
The so-called gate voltage is squeezed, and as shown in FIG. 7A, the power supply is cut off in a state where the increase of the output current is stopped, that is, so-called soft cut-off is performed.
That is, the jump voltage (ΔVCE) shown in FIG. 6 is suppressed, and the voltage fluctuation rate (dv / dt) is made gentle.

[0011]

However, referring to FIG. 9, a description will be given of a shut-off operation in a three-phase fault phase in the prior art. FIG. 9 is an explanatory diagram of interruption of a failure phase in the related art. In order to simplify the description, one phase of the failure phase will be described. The high-speed switching element formed of FWDD ₁ connected in anti-parallel to IGBTS ₁ shown in FIG. 5 will be described in more detail with reference to FIG. Between the gate and the driving power supply circuit 4 of the IGBTs ₁ (see FIG. 5), the drive circuit 5a is connected, the the drive circuit 5a, a gate driver 13a and the overcurrent detection circuit 5D ₁ is connected . In an actual three-phase bridge type inverter circuit, _six high-speed switching elements IGBTS _1.
a, 5b... 9a, 9b, so that the driving circuits 5a, 5b.
₁ , 5D ₂ ... 5D ₆ , that is, three phases, and as shown in FIG. 1, the control unit 3 and the power supply unit 4 are configured as a common unit and provided with necessary functions. I have. Detailed illustration of these three phases is omitted because it becomes complicated.

[0012] In the description of the circuit portion, it will be described in detail overcurrent detection circuit 5D ₁ semi phase. Overcurrent detection circuit 5D ₁ includes an optical coupler 10a having a semiconductor light emitting element connected to the power supply circuit 4, and the overcurrent detection unit 11a that is connected to the optical coupler 10a, the overcurrent detection unit 11a
And a soft cutoff circuit 12a connected to the gate of the IGBTS ₁ via the gate drive unit 13a.

The overcurrent detector 11a includes a diode D
The collector current of the IGBTS ₁ is detected via _D. As an overcurrent detection method in the failure phase, the voltage of VCE when IGBTS ₁ is ON (hereinafter referred to as Vs
at) and IGBTS ₁ as overcurrent.
Although there is a method of detecting the collector current of any of the above, any method may be used.

The control unit 3, the light having a semiconductor light receiving element, wherein with the overcurrent detection circuit 5D optically coupled with the optical coupler 10a having a _first semiconductor light emitting element, are electrically connected to each other Couplers 20u ₁ , 20u ₂ ··· 20w
₁ , 20w ₂ and the respective optical couplers 20u ₁ , 20u _2.
w ₁ , 20 w and a microprocessor (hereinafter referred to as MCU) 22 connected via a latch circuit 21. The PWM output from the MCU 22 is input to the gate drive unit 13 of the overcurrent detection circuit 6, and controls the gate voltage of the IGBTS ₁ .

In the protection circuit of the IGBTS ₁ configured as described above, in the failure phase, the overcurrent detection section 11a
When an overcurrent is detected in step ( ₁₎ , the gate drive section 13a is operated by the soft cutoff circuit 12a to squeeze the gate voltage of the IGBTS ₁ and soft cutoff. The latch circuit 21 is provided with the M
The output of the PWM signal from the CU 22 is stopped so as to be stopped. In healthy phase, wherein when an abnormality signal in the overcurrent detection unit 11a is detected, the optical coupler 20u ₁ of the control unit 3 by Fuotokapura _{40, 20u 2 ·· 20w 1,} 20
Since the abnormal signal to w ₂ is transmitted, U-phase, V-phase, PWM signal to each IGBTS ₂ ··· IGBTS ₆ of the W-phase are collectively cut off.

As described above, even if the protection of the high-speed switching element in which the abnormality is detected is sufficiently protected for soft shutoff, the other high-speed switching elements are passed through the control unit 3 of the inverter device. Since the cutoff is performed without squeezing the drive voltage,
The jump voltage (ΔVCE) and the voltage fluctuation rate (dv /
dt) becomes large, the collector current of the other high-speed switching elements becomes large, and reaches several times the rated current, so that there is a problem that secondary destruction occurs.

In addition to the short-circuit between phases, an abnormal current flows due to a difference in element characteristics and a difference in electrical characteristics of the main circuit wiring and the drive circuit wiring, and the abnormal current is transferred to each of the high-speed switching elements, U, V, and W phase terminals. The overcurrent detection circuit having the above-described configuration must be provided therebetween to detect the current. Furthermore, in order to respond to the detection of abnormal current, the drive circuit of each element must be provided with a function of gently reducing the drive voltage and soft shutoff. These circuits have a problem that they are complicated and expensive.

Further, in order to prevent the secondary destruction, it is necessary to detect that an abnormal current is detected from the drive unit of the high-speed switching element that has detected the abnormality and to the drive units of the other high-speed switching elements, and that the soft cutoff is transmitted. In the case of large-capacity inverters,
There is also a distance between the elements, and when a slow speed of about μsec becomes a problem, rapid transmission becomes impossible.

An object of the present invention is to solve such a conventional problem. When an abnormality occurs in a main circuit portion of an inverter device, not only a high-speed switching element in which the abnormality is detected but also a high-speed switching element. Another object of the present invention is to provide an inverter device that quickly suppresses a power supply voltage fluctuation, suppresses a current change due to circuit interruption, and prevents damage to the high-speed switching element.

[0020]

SUMMARY OF THE INVENTION An object of the present invention is to provide an inverter device having a control unit, a power supply unit, and an inverting unit for converting DC power into AC power, wherein a high-speed switching element is used as a main element of the inverting unit. A detecting means for detecting an abnormality of either the overcurrent or the short-circuit current of the high-speed switching element, and an adjusting means for adjusting a drive voltage of the high-speed switching element by the abnormality detection signal in the power supply unit. Is achieved by Further, in the inverter device described in the preceding paragraph, the present invention is achieved by including a transmission unit that rapidly transmits an abnormality detection signal of either the overcurrent or the short-circuit current. Further, in the inverter device described in the preceding paragraph, the transmission unit at the time of the abnormality is achieved by providing an optical communication unit that couples the drive voltage adjustment unit in the power supply unit and the abnormality detection unit.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of an inverter device according to the present invention will be described with reference to FIGS. FIG. 1 is an explanatory diagram of a protection circuit in an inverter device according to an embodiment of the present invention, and FIG. 2 is a general IGBT.
FIG. 3 is a partial explanatory view of a protection circuit in an inverter device according to another embodiment of the present invention, and FIG. 4 is a protection diagram in an inverter device according to still another embodiment of the present invention. It is a partial explanatory view of a circuit.

[Embodiment 1] FIG. 6 shows a situation when a load is short-circuited as an example of an abnormal situation. As shown in FIG. 6, when a load short-circuit occurs between the V-phase and the W-phase due to the wiring inductance L, the short-circuit current I becomes I = VPN / L... (1) It is shown by the above equation (1). Here, VPN is an inter-phase voltage, and L is a wiring inductance.

The generation of an abnormal voltage at the time of interruption in the prior art will be described with reference to FIG. Drive circuit 5 on V phase
Reference numeral a denotes an overcurrent detection unit, which detects a short-circuit current flowing through the IGBT, and softly cuts off a drive voltage (hereinafter, a gate voltage) of the drive circuit 5a on the V phase. As a result, the jump voltage of VCE on the V phase (hereinafter, referred to as ΔVCE)
Is suppressed to a minimum value by soft cutoff.

Since the short-circuit current I is cut off on the V-phase in the part of FIG. 8, the short-circuit current I is caused between the part and the part, between the FWDD ₂ of the V-phase lower arm and the IGBTS _{6 of the} W-phase lower arm. Flows to On the other hand, in the section, since the occurrence of the short-circuit abnormality is transmitted from the drive circuit 5a on the V phase to the control section 3, all the phases (U, V, W) are cut off from the control section 3 by the section. Is issued. At this time, since the soft cutoff is not performed in the U and W phases other than those on the V phase, ΔVCE jumps violently and may cause secondary destruction.

A description will now be given of an inverter device which can replace the conventional soft cutoff device in the inverter device according to the present invention and can quickly protect other elements. An inverter device according to the present invention will be described with reference to FIG. In the inverter device according to the present invention, a power supply voltage fluctuation circuit is provided in place of the conventional soft cutoff circuit to suppress the output current. The power supply voltage variation circuit 50 will be described with reference to FIG.

The configuration of FIG. 1 has many parts common to the inverter device of the prior art, so that the common parts will be briefly described and the characteristic parts will be described in detail.
Also, since the circuits for three phases are complicated, they are not shown in the figure, and the one-element IGBT circuit for half-phase will be described. In Figure 1, the IGBTs ₁ which is the main element, to connect the FWDD ₁ in antiparallel with the IGBTs _1, constitutes a switching-element. The said switching-element juxtaposed driving circuit portion I _D1, the output terminal of the driving circuit portion I _D1 and is connected to the gate of the IGBTs _1, the overcurrent from the collector terminal of the IGBTs ₁ by diode D _D The drive circuit unit I detects
Input to _D1 . The driver I _D1, the drive circuit portion 5a in the prior art of FIG. 9, unlike · · · 9b, is not shown in detail, the soft cutoff circuit 12a of the overcurrent detection circuit 5D ₁ in FIG. 9 It is omitted and has a simple configuration.

A power supply circuit 4 for supplying a drive voltage is connected to the drive circuit section _ID1.
Is provided with a power supply voltage variation circuit 50. In the voltage variation circuit 50, a voltage shift circuit 51 is provided in series on a supply line of driving power to the driving circuit unit _ID1 . The voltage level shift circuit 51 includes several level shift diodes 60a ₁ , 60a _2.
And 0a _4, with respect to the diode _{60a 1, 60a 2 ·· 60a 4} , an optical coupler 61 having a semiconductor light-receiving elements are connected in parallel.

Further, optical couplers 52a, 52a,
52f, 52b, 52c,... 52f are provided for each phase, and the optical couplers 52a, 52b, 5
Regardless of which of 2c... 52f operates, a semiconductor element 53 for amplifying the operation signal is provided. The control unit 3 is the same as that of FIG. 9 and will not be described again.

These configurations correspond to FIG. 5 of the present embodiment, and correspond to the drive circuit units I _D1 , I _D2 , I _D3.
.. , Each of the driving circuits 5a, 5b,... Shown in FIG.
Six-phase distribution is provided corresponding to 9a and 9b. These of the drive circuit section _{I D1, I D2, I D3} ·· I D6, respectively overcurrent detection circuit 5D _1, 5D ₂ ··· 5D ₆ is three phases, 6
Pieces provided, overcurrent detection circuit 5D ₁ optical coupler 10a is provided with · · 5D _6, and · · 10f, the optical coupler 52a in the power supply voltage variation circuit 50, 52 b · · 52f
Means that each optically operates as a pair.

The optical couplers 52a, 52b, 5
52f and the optical coupler 61 of the voltage shift circuit 51 are optically combined with each other.
Even if one of a, 52b, 52c,... 52f operates, the optical coupler 61 of the voltage shift circuit 51 operates.

The protection of the inverter device having the above configuration will be described. When each phase is in a healthy state, the drive circuit unit I
_D1, I _D2, I _D3 respectively overcurrent detection circuit in · · I _D6 5
D _1, 5D optical coupler 10a having a semiconductor light emitting element (not shown) of ₂ · · · 5D ₆ (see FIG. 9), 10b ·· 10
f, the optical couplers 52a, 52b, 52c,.
N, and the optical couplers 52a, 52b, 5
Each of the optical couplers 52a, 52b, 52c,... 52f transmits an ON signal.
When receiving the N signals, are adapted to the optical coupler 61 of the voltage shift circuit 51 is ON, several level shift diodes 60a _1, 60a ₂ ·· 60a ₄ are short-circuited, not shown converter section 1 The DC voltage from (see FIG. 5) is applied to the IGBTS ₁ as it is.

Since the drive voltage from the power supply circuit of the IGBT is recommended by each manufacturer to be about 15 V which is two to three times the threshold voltage, each photocoupler is normally turned on in the power supply voltage fluctuation circuit. , Several level shift diodes 6
The power supply voltage V is designed to be about 15 V in a state where 0a ₁ , 60a _2, ... 60a ₄ are short-circuited.

[0033] Now, if abnormality occurs in IGBTs ₁ of U-phase, a signal indicating an abnormality from the optical coupler 10a having a semiconductor light emitting element (not shown) of the corresponding overcurrent in the detection unit I _{D 1,} the semiconductor light emitting element An optical coupler 52a having
52f, 52c,... 52f, the corresponding one of the optical couplers 52a is turned off, and the OF from the optical coupler 52a is turned off.
Upon receiving the F signal, the optical coupler 61 of the voltage shift circuit 51 is turned off. Several level shift diodes 60
the power supply voltage is applied to _{a 1, 60a 2 ·· 60a 4} , so that the voltage drop in the diode 60a _1, 60a ₂ ·· 60a ₄ occurs.

For this reason, the voltage drop of several level shift diodes 60a ₁ , 60a ₂ ... 60a ₄ is subtracted from the DC voltage of approximately 15 V from the converter unit 1 and applied to all IGBTSs ₁ respectively. Will be.
For example, if there are four level shift diodes and one voltage drop is approximately 1 V, all IGBTS ₁ ,.
The voltage applied to the GBTS ₆ is 15V-4V ≒ 11V. The optical coupler 52a, 52b, if one of the 52c · · 52f is the OFF, the signal current is amplified the semiconductor element 53, the total optical coupler 20u _1, 20u ₂ ·· 20
the w ₂ is operated, each of IGBTS _1, IGBTS ₂
..IGBTS ₆ , ie, all IGBTs consequently
S ₁ ,... IGBTS ₆ is cut off with the applied voltage lowered. In this embodiment, the high-speed switching element IGBT
In S _1, the case has been described where an abnormality occurs,
Other-phase high-speed switching element IGBTS ₂ ,... IGB
Even if an abnormality occurs anywhere in TS ₆ , it operates and functions similarly.

As described above, if the applied voltage decreases, the gate voltage necessarily decreases. At this time, if V is excessively lowered, ΔVCE jumps due to abrupt dV / dt, leading to destruction of the main element. For this reason, the standard of the voltage drop is the rated current of the main element. If breaking from the rated current,
There is no particular problem in blocking the normal PWM signal.

FIG. 2 shows VCE-Ic of a general IGBT.
Although the characteristics are shown, the voltage fluctuated at the time of abnormality is I
Since it does not matter if the rated current is about the GBT, Ic
If the voltage is set to about 11 V, as described above, the voltage may be saturated.

As described above, in the related art, a complicated circuit is formed in the drive circuit and the soft cutoff is performed. On the other hand, in the present invention, a simple circuit including a photocoupler and a diode can be formed. In addition, since the driving circuits of each phase are far apart depending on the size of the IGBT, it takes time to transmit the soft cutoff signal. However, the control unit 3
Supply voltage variation circuit to the optical coupler 20u _1, 20u ₂ ·· 20w ₂ and the power supply unit 4 within the, since they are arranged collectively each phase component, perform power fluctuation and blocking at all phases together Will take less time.

The above embodiment is one embodiment of the inverter device according to the present invention, and many modifications are conceivable.
3 and 4 show circuit diagrams of other embodiments of the power supply voltage fluctuation circuit of the inverter device according to the present invention. FIG.
Instead of the diode voltage drop of [Embodiment 1],
The winding of the transformer is connected to the intermediate terminal T and the changeover switch S.
Is provided, and the changeover switch S is operated by the abnormal signal to lower the terminal voltage V. FIG. 4 shows a configuration in which a resistor R is provided instead of the voltage drop of the diode of [Embodiment 1], and the resistor R is divided by the operation of the optical coupler P to lower the terminal voltage V. .

[0039]

As described above in detail, according to the structure of the present invention, when an abnormality occurs in the main circuit of the inverter device, the high-speed switching element in which the abnormality is detected is, of course, other high-speed switching elements. For switching elements, provide a low-cost, simple-structure inverter device that quickly suppresses power supply voltage fluctuations, suppresses current changes due to circuit interruption, prevents damage to high-speed switching elements, and quickly protects main elements. can do.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a protection circuit in an inverter device according to an embodiment of the present invention.

FIG. 2 is a VCE-Ic characteristic diagram of a general IGBT.

FIG. 3 is a partial explanatory diagram of a protection circuit in an inverter device according to another embodiment of the present invention.

FIG. 4 is a partial explanatory diagram of a protection circuit in an inverter device according to still another embodiment of the present invention.

FIG. 5 is an explanatory diagram of a general three-phase bridge circuit inverter device.

FIG. 6 is an explanatory diagram of an inter-phase short-circuit of the inverter device of the general three-phase bridge circuit of FIG. 5;

7 is a VCE-Ic characteristic diagram of an IGBT of the inverter device of the general three-phase bridge circuit in FIG. 5 when a short circuit occurs between phases.

8 is an output current diagram of the inverter device of the general three-phase bridge circuit of FIG. 5 at the time of short-circuit between phases.

FIG. 9 is an explanatory diagram of a protection circuit in a conventional inverter device.

[Explanation of symbols]

1 ... AC power source 2 ... converter unit 3 ... electrolytic capacitor 4 ... inverse transform unit _{S 1, S 3, S 5} ... IGBT D 1 of the upper arm, D _3, D ₅ ... upper arm FWD S _2, S _4, S ₆ ... of the lower arm _{IGBT D 2, D 4, D} 6 ... lower arm FWD 5a, 5b, ··· 9a, 9b ... drive circuit 51 ... voltage shift circuit 52a, 52b, 52c, 52d ... optical coupler 53 ... amplification Transistor 60: voltage level shift diode 61: optical coupler

Continued on the front page (72) Inventor Satoshi Ibori 7-11-1, Higashi Narashino, Narashino-shi, Chiba Industrial Equipment Division, Hitachi, Ltd. (72) Inventor Naoki Takada 7-1-1, Higashi-Narashino, Narashino-shi, Chiba Co., Ltd. Hitachi, Ltd.Industrial Equipment Division (72) Inventor Souko Ishii 7-1-1 Higashi Narashino, Narashino City, Chiba Prefecture Hitachi, Ltd.Industrial Equipment Division (72) Inventor Masayuki Hirota 7-1-1, Higashi Narashino, Narashino City, Chiba Prefecture Hitachi Keiyo Engineering Co., Ltd. (72) Inventor Shuichi Sekiguchi 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture F-term in Hitachi Research Laboratory, Hitachi Ltd. 5H007 AA17 CA01 CB05 CC07 DB03 DB12 EA02 FA03 FA06 FA13 FA13 FA13

Claims (3)

[Claims] 1. An inverter device having a control unit, a driving power supply unit, and an inverter, and converting DC power to AC power, wherein a high-speed switching element is used as a main element of the inverter, An inverter device provided with a detecting means for detecting an abnormality of either an overcurrent or a short-circuit current, and an adjusting means for adjusting a drive voltage of the high-speed switching element by the abnormality detection signal in the power supply unit. . 2. The inverter device according to claim 1, further comprising a transmission unit that quickly transmits an abnormality detection signal of either the overcurrent or the short-circuit current. 3. The inverter device according to claim 2, wherein the transmission unit at the time of the abnormality includes an optical communication unit that couples the drive voltage adjustment unit in the power supply unit with the abnormality detection unit. Inverter device.