JP2000021774A - Manufacturing polycrystalline silicon film - Google Patents
Manufacturing polycrystalline silicon filmInfo
- Publication number
- JP2000021774A JP2000021774A JP10188643A JP18864398A JP2000021774A JP 2000021774 A JP2000021774 A JP 2000021774A JP 10188643 A JP10188643 A JP 10188643A JP 18864398 A JP18864398 A JP 18864398A JP 2000021774 A JP2000021774 A JP 2000021774A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- silicon thin
- polycrystalline silicon
- film
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は光を用いて物質の改
質を行う方法に関するものであり、特に、液晶ディスプ
レイ表示の駆動を行う回路を構成するシリコン薄膜にレ
ーザ光を照射して非晶質シリコン薄膜を多結晶シリコン
薄膜に改質する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for modifying a substance using light, and more particularly to a method for irradiating a silicon thin film constituting a circuit for driving a liquid crystal display display with a laser beam to form an amorphous substance. The present invention relates to a method for modifying a porous silicon thin film into a polycrystalline silicon thin film.
【０００２】[0002]
【従来の技術】近年、液晶ディスプレイにおいては、市
場の拡大に伴い、大型化、高精細化、高輝度化へと開発
が進められている。その中でも、特に画素スイッチ素
子、駆動回路を基板に組み込んだ、いわゆる一体型のア
クティブマトリックス液晶表示装置は、将来の液晶表示
装置の主流と目され、研究開発が進められている。この
基板に形成される画素スイッチ素子や駆動回路は、多結
晶シリコン薄膜を用いた薄膜トランジスタで構成されて
いる。2. Description of the Related Art In recent years, liquid crystal displays have been developed to have a larger size, higher definition, and higher brightness as the market expands. Among them, in particular, a so-called integrated type active matrix liquid crystal display device in which a pixel switch element and a driving circuit are incorporated in a substrate is considered to be a mainstream of a liquid crystal display device in the future, and research and development are being advanced. The pixel switch element and the drive circuit formed on this substrate are constituted by thin film transistors using a polycrystalline silicon thin film.
【０００３】そして上記の多結晶シリコン薄膜を作製す
るにあたっては、まず基板上に例えばシリコンを非晶質
状態で成膜し、その後、エキシマレーザなどのレーザ光
を照射し、加熱により非晶質シリコン薄膜を溶融させ、
多結晶シリコン薄膜を得ている。In producing the above-mentioned polycrystalline silicon thin film, first, for example, silicon is formed in an amorphous state on a substrate, and then a laser beam such as an excimer laser is irradiated, and the amorphous silicon is heated. Melting the thin film,
A polycrystalline silicon thin film has been obtained.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
多結晶シリコン薄膜の作製方法では、均一で大きな粒径
の多結晶シリコン薄膜を得ることが困難である場合があ
る。もし、均一な粒径の多結晶シリコン薄膜が得られな
いと、例えば液晶表示領域を構成する画素スイッチを構
成する薄膜トランジスタ（ＴＦＴ）の特性が面内で不均
一になり、その結果、表示にムラが生じたりする。ま
た、粒径が小さいことは、キャリアの移動度が低くなる
ことを意味するため、高性能な薄膜トランジスタを得る
ことができなくなってしまう。However, it is sometimes difficult to obtain a uniform polycrystalline silicon thin film having a large grain size by the conventional method for producing a polycrystalline silicon thin film. If a polycrystalline silicon thin film having a uniform particle size cannot be obtained, for example, the characteristics of a thin film transistor (TFT) constituting a pixel switch constituting a liquid crystal display area become non-uniform in a plane, resulting in uneven display. May occur. In addition, a small particle size means that the mobility of carriers is low, so that a high-performance thin film transistor cannot be obtained.
【０００５】そこで本発明は上記の問題点に鑑み、面内
において、均一で粒径の大きな多結晶シリコン薄膜を得
ることが可能な、多結晶シリコン薄膜の製造方法を提供
することを目的とする。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a method of manufacturing a polycrystalline silicon thin film capable of obtaining a polycrystalline silicon thin film having a uniform grain size in a plane. .
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の多結晶シリコン薄膜の製造方法は、非晶
質シリコン薄膜を加熱して多結晶シリコン薄膜を形成す
る多結晶シリコン薄膜の製造方法であって、加熱されて
いるシリコン薄膜の温度を計測し、その計測結果に基づ
いてシリコン薄膜の加熱温度をほぼ一定に保ちながら多
結晶シリコン薄膜を形成することを特徴とする構成とな
っている。In order to achieve the above object, a method of manufacturing a polycrystalline silicon thin film according to the present invention comprises the steps of: heating an amorphous silicon thin film to form a polycrystalline silicon thin film; Measuring the temperature of the silicon thin film being heated, and forming the polycrystalline silicon thin film while maintaining the heating temperature of the silicon thin film substantially constant based on the measurement result. Has become.
【０００７】具体的には、加熱されているシリコン薄膜
の加熱部の温度がシリコンの融点以上の一定温度を越え
ると、前記シリコン薄膜の加熱部の加熱量を低減するよ
うに制御する。そして、より具体的には、シリコン薄膜
が形成されている基板の搬送速度を制御してシリコン薄
膜の加熱部の加熱量を制御する。More specifically, when the temperature of the heating portion of the silicon thin film being heated exceeds a certain temperature equal to or higher than the melting point of silicon, the heating amount of the heating portion of the silicon thin film is controlled to be reduced. More specifically, the heating speed of the heating unit for the silicon thin film is controlled by controlling the transfer speed of the substrate on which the silicon thin film is formed.
【０００８】この構成によれば、成膜された非晶質シリ
コン薄膜の膜厚分布に関係なく、最適の熱量を与えるこ
とができる。According to this configuration, an optimum amount of heat can be given regardless of the film thickness distribution of the formed amorphous silicon thin film.
【０００９】[0009]
【発明の実施の形態】本発明者等は、上記した問題が、
非晶質シリコン薄膜の膜厚とレーザ光のエネルギー量の
マッチングを取ることが困難であることに起因して発生
していることに着目した。非晶質シリコン薄膜の膜厚は
数百ｎｍという薄膜のため、膜厚制御が難しく、面内に
おいて、膜厚分布が生じる。このような膜厚分布が存在
する非晶質シリコン薄膜に対して、一定のエネルギー量
を有するレーザ光を照射するということは、非晶質シリ
コンの膜厚に対する最適なレーザエネルギ量を照射する
ことにはならない。BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have solved the above-mentioned problems.
Attention was paid to the fact that it is difficult to match the thickness of the amorphous silicon thin film with the amount of energy of the laser light. Since the thickness of the amorphous silicon thin film is as thin as several hundred nm, it is difficult to control the thickness, and a film thickness distribution occurs in the plane. Irradiating the amorphous silicon thin film having such a film thickness distribution with a laser beam having a constant energy amount means irradiating an optimal laser energy amount with respect to the amorphous silicon film thickness. It does not become.
【００１０】そこで本発明では、レーザの加熱時に薄膜
の溶融部の温度を直接計測し、粒径の大きな多結晶膜と
なるよう薄膜の温度制御を行う構成となっている。Therefore, in the present invention, the temperature of the melted portion of the thin film is directly measured at the time of laser heating, and the temperature of the thin film is controlled so as to form a polycrystalline film having a large grain size.
【００１１】以下本発明の実施の形態における多結晶シ
リコン薄膜の製造方法について図面を参照しながら説明
する。なお、以下に示す方法は、非晶質シリコン薄膜が
形成された基板を搬送しながら、ライン状に整形された
エキシマレーザー光を照射して多結晶化を行う方法であ
る。Hereinafter, a method of manufacturing a polycrystalline silicon thin film according to an embodiment of the present invention will be described with reference to the drawings. The method described below is a method in which a substrate on which an amorphous silicon thin film is formed is irradiated with linearly shaped excimer laser light to carry out polycrystallization.
【００１２】図１に、本発明の実施の形態における多結
晶シリコン薄膜の製造方法において、エキシマレーザー
光を非晶質シリコン薄膜に照射して、加熱により多結晶
シリコン薄膜に変質している様子を示す斜視図を示す。
図１において、１はエキシマレーザー、２はミラー、３
はビームホモジナイザー（所定の光強度パターンに整形
する機能を有する）、４は放射温度計、５は基板、６は
基板送り速度制御器、７は放射温度計温度演算出力部を
示している。FIG. 1 shows a state in which an amorphous silicon thin film is irradiated with excimer laser light in a method of manufacturing a polycrystalline silicon thin film according to an embodiment of the present invention, and is transformed into a polycrystalline silicon thin film by heating. FIG.
In FIG. 1, 1 is an excimer laser, 2 is a mirror, 3
Denotes a beam homogenizer (has a function of shaping into a predetermined light intensity pattern), 4 denotes a radiation thermometer, 5 denotes a substrate, 6 denotes a substrate feed speed controller, and 7 denotes a radiation thermometer temperature calculation output unit.
【００１３】そして本発明の多結晶シリコン薄膜の製造
方法は、下記のようにして行う。まず、ガラス（６ｉｎ
角、厚さ１．１ｍｍ、コーニング＃１７３７）からなる
基板５に下地膜であるＳｉＯ2膜を常圧ＣＶＤ法により
３００ｎｍ成膜し、さらに減圧ＣＶＤ法によって膜厚５
０ｎｍとなるように非晶質シリコン膜を成膜する。次
に、エキシマレーザ光の照射により、非晶質シリコン薄
膜の溶融・再結晶を行うわけであるが、ここでは、エキ
シマレーザー１の出力は３００ｍＪ／ｃｍ2、１００Ｈ
ｚで発振させ、１回あたり２０ｎｓのレーザ照射時間と
した。The method for producing a polycrystalline silicon thin film according to the present invention is performed as follows. First, glass (6in
An SiO 2 film as a base film is formed to a thickness of 300 nm by a normal pressure CVD method on a substrate 5 having a corner, a thickness of 1.1 mm, and Corning # 1737).
An amorphous silicon film is formed to have a thickness of 0 nm. Next, the amorphous silicon thin film is melted and recrystallized by excimer laser beam irradiation. Here, the output of the excimer laser 1 is 300 mJ / cm 2 , 100 H
Oscillation was performed at z and the laser irradiation time was set to 20 ns each time.
【００１４】本発明では、加熱されているシリコン薄膜
の温度を直接計測し、その計測結果に基づいてシリコン
薄膜の加熱温度をほぼ一定に保ちながら多結晶シリコン
薄膜を形成するわけであるが、放射温度計４には、例え
ばセンサ材料としてＨｇＣｄＴｅを用いたものを用いる
と、応答時間は０．０５ｓｅｃとなる。なお、基板５は
図１の矢印方向に５ｍｍ／ｓｅｃで搬送されている（ビ
ームホモジナイザー３の通過前が非晶質シリコン膜、通
過後が多結晶シリコン膜）が、これは非晶質シリコン薄
膜が常に５０ｎｍであれば、最適な溶融温度となるよう
に決められたものとする。In the present invention, the temperature of a heated silicon thin film is directly measured, and a polycrystalline silicon thin film is formed based on the measured result while keeping the heating temperature of the silicon thin film substantially constant. For example, when a sensor using HgCdTe as a sensor material is used as the thermometer 4, the response time becomes 0.05 sec. The substrate 5 is transported at 5 mm / sec in the direction of the arrow in FIG. 1 (an amorphous silicon film before passing through the beam homogenizer 3 and a polycrystalline silicon film after passing through the beam homogenizer 3). Is always 50 nm, the melting temperature is determined to be the optimum.
【００１５】上記のように非晶質シリコン薄膜の膜厚が
一定であれば、問題は生じないが、実際には、膜厚分布
が生じ、例えば、非晶質シリコン薄膜の厚さが５０ｎｍ
より±１０％以上ずれたりする。If the thickness of the amorphous silicon thin film is constant as described above, no problem occurs, but actually, a film thickness distribution occurs, for example, when the thickness of the amorphous silicon thin film is 50 nm.
± 10% or more.
【００１６】非晶質シリコン薄膜の厚みが厚い場合に
は、十分な加熱がされないことになってしまい、多結晶
化できない領域も生じてしまう。このような場合には、
非晶質シリコン薄膜が形成されている基板５の搬送速度
を最初の設定（膜厚が５０ｎｍの場合）よりも遅くして
やることにより、十分な加熱を行う。When the thickness of the amorphous silicon thin film is large, sufficient heating is not performed, and some regions cannot be polycrystallized. In such a case,
Sufficient heating is performed by making the transport speed of the substrate 5 on which the amorphous silicon thin film is formed slower than the initial setting (when the film thickness is 50 nm).
【００１７】一方、非晶質シリコン薄膜の厚みが薄い場
合には、溶融温度が高くなりすぎるてしまう。この場合
には、十分な加熱は行えるものの、その温度が高いため
に、冷却速度が速くなってしまい、十分な結晶化時間を
得ることができず、その結果、小さな粒径の多結晶シリ
コン薄膜となってしまう。この点について、図２を参照
しながら説明する。図２は温度計算により非晶質シリコ
ン膜が溶融直後（低溶融温度のとき）に冷却された場合
と、溶融後さらに十分に加熱された（高溶融温度のと
き）後に冷却された場合のシリコンの温度変化を示した
ものである。低溶融温度のときは、高溶融温度のときに
比べ結晶化温度（Ｔｃ）、ガラス転移温度（Ｔｇ）付近
の冷却速度（時間当たりの温度変化量）が小さく、結晶
化に必要な時間が確保される。そこで、このような場合
には、基板５の搬送速度を最初の設定よりも早くする。
なお、基板５の送り速度はビームホモジナイザー３の通
過時に常にシリコンの溶融温度となるようにシリコン表
面の温度を検知しながら、フィードバックがかけられ基
板送り速度制御器６で制御されている。On the other hand, when the thickness of the amorphous silicon thin film is small, the melting temperature becomes too high. In this case, although sufficient heating can be performed, the cooling rate is increased due to the high temperature, and a sufficient crystallization time cannot be obtained. As a result, a polycrystalline silicon thin film having a small grain size is obtained. Will be. This will be described with reference to FIG. FIG. 2 shows the case where the amorphous silicon film is cooled immediately after melting (at a low melting temperature) and the case where the amorphous silicon film is cooled sufficiently after being heated (at a high melting temperature) after melting according to temperature calculation. FIG. When the melting temperature is low, the crystallization temperature (Tc) and the cooling rate (temperature change per hour) near the glass transition temperature (Tg) are smaller than when the melting temperature is high, and the time required for crystallization is secured. Is done. Therefore, in such a case, the transport speed of the substrate 5 is set faster than the initial setting.
The feed speed of the substrate 5 is controlled by the substrate feed speed controller 6 by applying feedback while detecting the temperature of the silicon surface so that the temperature of the silicon is always the melting temperature of the silicon when passing through the beam homogenizer 3.
【００１８】上記の例では、レーザの発振周波数１００
Ｈｚ（０．０１ｓｅｃ間隔で発振）に比べ、放射温度計
の応答時間が０．０５ｓｅｃと遅いが、シリコンの溶融
（融点１４００℃）が常に確認される状態での基板の送
り速度のもとでは、溶融温度の最高値は約１６００℃で
溶融温度が低く、Ｔｃ付近の冷却速度も小さく、粒径が
約１μｍの結晶ができた。In the above example, the laser oscillation frequency 100
Hz (oscillation at 0.01 sec intervals), the response time of the radiation thermometer is as slow as 0.05 sec. However, under the condition that the melting of silicon (melting point of 1400 ° C.) is always confirmed, the substrate feed speed is high. The maximum melting temperature was about 1600 ° C., the melting temperature was low, the cooling rate near Tc was low, and crystals having a particle size of about 1 μm were formed.
【００１９】[0019]
【発明の効果】以上のように本発明によれば、非晶質シ
リコン薄膜の膜厚分布に対して、基板の温度を測定し、
この測定結果に基づいて、測定温度が予め設定された所
定の温度より高くなった場合には、基板の搬送速度を速
くする一方で、測定温度が予め設定された所定の温度よ
り低くなった場合には、基板の搬送速度を遅くするとい
う制御を行うことにより、シリコン薄膜の温度をほぼ一
定に保って多結晶化処理を行うことができるため、最適
なレキシマレーザーアニールを行うことができるため、
面内で均一で、大きな結晶粒を有する多結晶薄膜トラン
ジスタを得ることができる。As described above, according to the present invention, the temperature of the substrate is measured with respect to the film thickness distribution of the amorphous silicon thin film,
Based on the measurement result, when the measured temperature is higher than a predetermined temperature, the transfer speed of the substrate is increased, and when the measured temperature is lower than the predetermined temperature. In addition, by controlling the substrate transport speed to be slow, the polycrystallizing process can be performed while keeping the temperature of the silicon thin film almost constant, so that the optimal leximer laser annealing can be performed. ,
A polycrystalline thin film transistor having in-plane uniform and large crystal grains can be obtained.
【図１】本発明の実施の形態の多結晶シリコン薄膜の製
造方法におけるエキシマレーザー光を非晶質シリコン薄
膜に照射して、加熱により多結晶シリコン薄膜に変質し
ている様子を示す斜視図FIG. 1 is a perspective view showing a state in which an amorphous silicon thin film is irradiated with excimer laser light in a method for manufacturing a polycrystalline silicon thin film according to an embodiment of the present invention, and is transformed into a polycrystalline silicon thin film by heating.
【図２】シリコンの溶融、冷却時の温度変化を示す図FIG. 2 is a diagram showing a temperature change during melting and cooling of silicon.
１ エキシマレーザー ２ ミラー ３ ビームホモジナイザー ４ 放射温度計基板 ５ 基板 ６ 基板送り速度制御器 ７ 放射温度計温度演算出力部 Reference Signs List 1 excimer laser 2 mirror 3 beam homogenizer 4 radiation thermometer substrate 5 substrate 6 substrate feed speed controller 7 radiation thermometer temperature calculation output unit
Claims (3)
コン薄膜を形成する多結晶シリコン薄膜の製造方法であ
って、加熱されているシリコン薄膜の温度を計測し、そ
の計測結果に基づいてシリコン薄膜の加熱温度をほぼ一
定に保ちながら多結晶シリコン薄膜を形成することを特
徴とする多結晶シリコン薄膜の製造方法。1. A method for manufacturing a polycrystalline silicon thin film, comprising heating an amorphous silicon thin film to form a polycrystalline silicon thin film, comprising: measuring a temperature of the heated silicon thin film; A method of manufacturing a polycrystalline silicon thin film, comprising forming a polycrystalline silicon thin film while keeping a heating temperature of the silicon thin film substantially constant.
度がシリコンの融点以上の一定温度を越えると、前記シ
リコン薄膜の加熱部の加熱量を低減するように制御する
ことを特徴とする請求項１に記載の多結晶シリコン薄膜
の製造方法。2. When the temperature of the heated portion of the silicon thin film being heated exceeds a certain temperature equal to or higher than the melting point of silicon, the heating amount of the heated portion of the silicon thin film is controlled to be reduced. Item 2. The method for producing a polycrystalline silicon thin film according to Item 1.
速度を制御して前記シリコン薄膜の加熱部の加熱量を制
御することを特徴とする請求項２に記載の多結晶シリコ
ン薄膜の製造方法。3. The method of manufacturing a polycrystalline silicon thin film according to claim 2, wherein a heating rate of a heating section of the silicon thin film is controlled by controlling a transfer speed of a substrate on which the silicon thin film is formed. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10188643A JP2000021774A (en) | 1998-07-03 | 1998-07-03 | Manufacturing polycrystalline silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10188643A JP2000021774A (en) | 1998-07-03 | 1998-07-03 | Manufacturing polycrystalline silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000021774A true JP2000021774A (en) | 2000-01-21 |
Family
ID=16227313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10188643A Pending JP2000021774A (en) | 1998-07-03 | 1998-07-03 | Manufacturing polycrystalline silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000021774A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006135232A (en) * | 2004-11-09 | 2006-05-25 | Sharp Corp | Method and apparatus for manufacturing semiconductor device |
| KR100698691B1 (en) | 2005-12-21 | 2007-03-23 | 삼성에스디아이 주식회사 | Crystallization of amorphous-Silicon film using an Excimer-Laser and Method for fabricating of poly Transparent Thin Film Transistor |
| US7881350B2 (en) | 2002-09-17 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device |
| WO2015174347A1 (en) * | 2014-05-12 | 2015-11-19 | 株式会社日本製鋼所 | Laser annealing device, serial conveyance path for laser annealing, laser beam radiation means, and laser annealing method |
-
1998
- 1998-07-03 JP JP10188643A patent/JP2000021774A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7881350B2 (en) | 2002-09-17 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device |
| JP2006135232A (en) * | 2004-11-09 | 2006-05-25 | Sharp Corp | Method and apparatus for manufacturing semiconductor device |
| KR100698691B1 (en) | 2005-12-21 | 2007-03-23 | 삼성에스디아이 주식회사 | Crystallization of amorphous-Silicon film using an Excimer-Laser and Method for fabricating of poly Transparent Thin Film Transistor |
| WO2015174347A1 (en) * | 2014-05-12 | 2015-11-19 | 株式会社日本製鋼所 | Laser annealing device, serial conveyance path for laser annealing, laser beam radiation means, and laser annealing method |
| CN105830201A (en) * | 2014-05-12 | 2016-08-03 | 株式会社日本制钢所 | Laser annealing device, serial conveyance path for laser annealing, laser beam radiation means, and laser annealing method |
| JPWO2015174347A1 (en) * | 2014-05-12 | 2017-06-01 | 株式会社日本製鋼所 | Laser annealing apparatus, continuous conveyance path for laser annealing treatment, laser light irradiation means, and laser annealing treatment method |
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