JP2000011897A - Manufacture of plasma display panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma display panel barrier rib forming board provided with high-precision barrier ribs having a high yield and a high aspect ratio by forming a dielectric layer and the barrier ribs on a glass substrate on which electrodes are formed. SOLUTION: This manufacturing method of a plasma display panel includes a process to form electrodes, a dielectric precursor layer and a barrier pattern on a substrate in this order, and form a dielectric layer and barrier ribs by baking the dielectric precursor layer and the barrier pattern at the same time. In this case, the center line average roughness Ra of the dielectric precursor layer is 0.3-2 μm.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a plasma display.

[0002]

2. Description of the Related Art Since a plasma display can display at a higher speed than a liquid crystal display and can be easily enlarged, it has permeated the fields of OA equipment and public information display devices. Further, progress in the field of high-definition television is highly expected.

[0003] With the expansion of such uses, a color plasma display having a large number of fine display cells has attracted attention. The plasma display generates a plasma discharge between electrodes in a discharge space provided between a front glass substrate and a rear glass substrate, and emits ultraviolet light generated from a gas sealed in the discharge space in the discharge space. The display is performed by hitting the phosphor. In this case, a partition (also referred to as a barrier or a rib) is provided in order to suppress the spread of the discharge to a certain area and perform the display in a specified cell, and to secure a uniform discharge space.

As described above, a plasma display is constructed by laminating a front glass substrate and a rear glass substrate. On the front glass substrate, a transparent electrode (display electrode) made of ITO or tin oxide is formed inside the glass substrate. Have been. A plurality of transparent electrodes are formed in a strip shape, and a pulsed AC voltage of usually 10 kHz to several tens of kHz is applied between adjacent transparent electrodes to obtain a discharge for display, but the sheet resistance of the transparent electrodes is as high as several tens Ω / cm ^2. Therefore, the applied voltage pulse does not rise sufficiently and driving becomes difficult. So usually,
A metal bus electrode is formed on the transparent electrode to reduce the resistance value.

[0005] These electrodes are covered with a transparent dielectric layer made of low-melting glass, and a magnesium oxide layer as a protective layer is formed thereon by an electron beam evaporation method. The dielectric layer formed on the front glass substrate has a role as a capacitor for storing electric charges for discharge.

On the other hand, on the rear glass substrate, data electrodes (address electrodes) for writing display data are formed using a silver paste, and a dielectric layer is provided thereon to cover the data electrodes, thereby forming partition walls. Is formed thereon. A phosphor layer that emits red, green, and blue light is applied, dried, and fired on a side surface of the partition wall and a bottom surface surrounded by the partition wall to form a phosphor layer.

[0007] It is known that in a rear glass substrate, by adopting a structure in which a dielectric layer is formed on an electrode, a partition formed on an upper portion is less likely to peel or fall. In particular, when the partition is formed by the photosensitive paste method, the partition is likely to be peeled off due to a difference in polymerization curing between the upper part and the lower part of the partition, so that the dielectric layer is formed as an under glass layer for forming the partition layer. Is effective for improving the yield. However, if the conditions for forming the dielectric layer are not appropriate, problems such as peeling of the dielectric layer from the glass substrate and generation of cracks due to unevenness due to the thickness of the electrode occur. It is important to define the temperature and firing conditions.

In a plasma display, after the above-mentioned back glass substrate and a front glass substrate having a plurality of strip-shaped transparent electrodes are sealed so as to enable matrix driving, He-Xe, Ne-Xe, etc. And a drive circuit is mounted. When a pulsed AC voltage is applied between adjacent transparent electrodes, gas discharge occurs, and plasma is formed. The ultraviolet light generated here excites the phosphor, emits visible light, and emits display light through the front glass substrate.

A plasma display is manufactured in this manner. However, in the production of a rear glass substrate, there is a problem that when the partition is baked, the partition is easily peeled off or the dielectric layer is cracked, which lowers the yield. Was. In particular, a dielectric layer formed on the entire surface of a glass substrate, and a partition having a small pitch formed in order to obtain a high-definition plasma display, the above problem is likely to occur as the size of the substrate increases, and a countermeasure is required. is there.

In view of this, Japanese Patent Application Laid-Open No. 61-22024 proposes a gas discharge panel in which a silver electrode is covered with a dielectric material of low melting point glass. Also, JP-A-62-640
No. 20 proposes a dielectric layer containing 7 to 15% by weight of an insulating material having a higher melting point than a low melting point glass.
Japanese Patent Application Laid-Open No. 4-36923 proposes a technique for partially removing a dielectric provided on a conductor by a photolithography method.

Further, in Japanese Patent Application Laid-Open No. 3-152830, PbO—B ₂ O ₃ —SiO
_{2, PbO-B 2 O 3} , ZnO-B 2 O 3 dielectric photosensitive glass paste using -SiO ₂ based glass has been proposed. In JP-A-7-335134, a dielectric composition comprising an oxide selected from Group IIa and Group IIIa of the periodic table of elements is disclosed. Further, in JP-A-6-267429, Be, Mg, Ca, Sr, Ba, Sc, Y, T
An oxide crystal dielectric composition containing at least one selected from the group consisting of h and a lanthanide element has been proposed.

However, in any of the above techniques, when a dielectric layer is provided on an electrode layer and a partition is further formed thereon, cracking of the dielectric layer, peeling of the partition, disconnection, and meandering are eliminated. Was not enough.

Further, when the effect of alkali metal ions and the like in the dielectric, specifically, the discoloration of the dielectric due to the ion exchange reaction with silver used for the electrode and metal ions such as tin contained in the substrate occurs, There is a problem that the display quality of the display is reduced.

Further, in addition to the above-mentioned drawbacks, in addition to affinity for a photosensitive paste for forming barrier ribs which is applied on the upper part and subjected to pattern exposure, formability of a barrier rib pattern having a good shape, baking of a dielectric paste and a barrier rib pattern, There is also a problem in the influence on the subsequent steps such as the shape retention of the two and the adhesion between the two in the process.

[0015]

SUMMARY OF THE INVENTION Accordingly, the present invention is to produce a plasma display substrate having high yield, high aspect ratio and high definition partition walls without defects such as partition wall peeling and dielectric cracks. The purpose is to do so.

[0016]

According to the present invention, an electrode, a dielectric precursor layer, and a partition pattern are formed in this order on a substrate,
A method for manufacturing a plasma display comprising a step of forming a dielectric layer and a partition by simultaneously firing the dielectric precursor layer and the partition pattern, wherein the center line average roughness Ra of the dielectric precursor layer is A method for manufacturing a plasma display, which is 0.3 to 2 μm.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, when a dielectric layer and a partition are formed on electrodes of a substrate constituting a plasma display, a partition pattern is formed on a dielectric precursor layer having a specific surface roughness. And firing the partition pattern and the dielectric precursor layer simultaneously.

In the present invention, the film coated with the dielectric paste is heat-treated to a state where the organic components contained therein are thermally decomposed and removed, but the inorganic components are not completely melted. It is referred to as a “body layer”, and the one processed to a completely molten state is referred to as a “dielectric layer”.

Examples of the substrate used for the plasma display include soda glass and heat-resistant glass.

The electrode formed on the substrate should be formed using an electrode material containing 80% by weight or more of silver, and more preferably 95% by weight. It is preferable from the viewpoint of. In addition, 1
By containing ~ 5% by weight of glass frit,
An electrode layer having excellent adhesion to the substrate can be obtained.

The method of forming the electrodes is not particularly limited, and is a known technique, for example, a so-called screen printing method in which a normal conductive paste is printed using a screen plate having a desired pattern, a normal photosensitive conductive method. A so-called photolithography method or the like, in which the photosensitive conductive paste is applied to a substrate using a paste, and then the pattern exposure is performed through a photomask having a desired pattern, followed by development, can be applied.

The thickness of the electrode depends on the method of forming the electrode, but is preferably 0.1 to 10 μm. When the thickness of the electrode is within this range, the characteristics of the electrode are maintained, and the occurrence of cracks in the dielectric layer along the electrode is prevented without increasing the thickness including the dielectric layer formed thereon. It is preferable in terms of prevention.

Next, a dielectric precursor layer is formed on the substrate on which the electrodes have been formed. The dielectric precursor layer is formed, for example, by applying and drying a dielectric paste composed of an inorganic powder and an organic component to a predetermined thickness, and performing a heat treatment.

The dielectric layer covers and protects the electrodes,
This has the effect of improving the stability of the discharge voltage, eliminating the surface irregularities due to the electrodes, and further improving the yield of forming the partition formed on the upper part. In particular, when the partition is formed by the photosensitive paste method, the adhesion of the partition is improved and the disconnection and distortion are reduced as compared with the case where the partition is directly formed on the glass surface, which is effective in improving the yield. Further, if the dielectric layer is whitened, it is possible to obtain an advantage that display light emitted from the phosphor layer is well reflected and luminance can be improved.

In the present invention, the dielectric precursor layer needs to have a center line average roughness Ra of 0.3 to 2 μm on its surface.

The center line average roughness Ra is one index indicating the roughness of the target surface, and its definition is JIS B0601.
And physical properties obtained based on a roughness curve. The roughness curve is a curve obtained by removing the undulation component of the surface from the contour appearing at the cut when the target surface is cut at a plane perpendicular to the target surface. The center line is a straight line in which, when a straight line is drawn parallel to the average line of the roughness curve, the area surrounded by the straight line and the roughness curve is equal on both sides of the straight line. The center line average roughness Ra is a value obtained by dividing the area surrounded by the roughness curve and the center line by the measured length in μm, and indicates the degree of surface irregularities within the measurement range. A stylus-type roughness meter (eg, a roughness measuring instrument SE-3300 manufactured by Kosaka Laboratory Co., Ltd.) was used for the measurement.

When Ra on the surface of the dielectric precursor layer is within the above range, the adhesion to the glass paste coating film for forming a partition wall applied thereon becomes strong. This is presumed to be due to an increase in the area in contact with the glass paste coating film for forming the partition walls, that is, strong adhesion to the surface of the dielectric precursor layer due to the anchor effect.

As described above, the increase in the contact area and the improvement in the adhesion between the surface of the dielectric precursor layer and the glass paste coating film for forming the partition wall due to the anchor effect are caused by the formation of the partition wall pattern of the glass paste coating film for forming the partition wall. This can effectively contribute to suppressing the occurrence of defects such as peeling of the partition pattern and the partition caused by the resulting drying or polymerization shrinkage and shrinkage due to binder removal in the baking of the partition pattern.

When the center line average roughness Ra is smaller than 0.3 μm, this effect is not sufficient, and when the partition pattern is formed on the dielectric precursor layer or when firing is performed, the partition pattern or the partition The yield is reduced due to peeling or falling. When the thickness is larger than 2 μm, the coating property of the glass paste for forming the partition wall is reduced, and the formation of the partition wall pattern is adversely affected, thereby causing a discharge defect.

In order to form a dielectric precursor layer having a center line average roughness of 0.3 to 2 μm, two means are effective.

A first means is to add a filler component having an average particle size of 1 to 5 μm as an inorganic component of the dielectric paste, and a second means is a sintering lower limit of the inorganic component contained in the dielectric paste. Heat treatment at a temperature lower by 5 to 50 ° C. than the temperature to form a dielectric precursor layer in which sintering of glass is suppressed.

First, the first means will be described in the following description of a preferred dielectric paste in the present invention.

As the dielectric paste, one composed of an organic component and an inorganic component is preferably used. As the organic component, an organic binder is mainly used, and a plasticizer, a solvent and, if necessary, a dispersant, a leveling agent, an Those containing additives such as a thickener and a thixotropic agent are preferred. Specific examples of the organic binder include polyvinyl alcohol, polyvinyl butyral, methacrylate polymer and copolymer, acrylate polymer and copolymer, and cellulose resin. In particular, it is preferable to use a cellulosic resin from the viewpoint of debinding.

As the inorganic component of the dielectric paste, one containing glass as a main component is exemplified. The inorganic component forming the dielectric layer is preferably a low-melting glass that can be baked on a glass substrate, and at the same time, its composition is preferably inert to the electrode constituents. That is,
Since the dielectric layer is formed in contact with the electrode, if alkali metal ions are present in the glass component, an ion exchange reaction occurs with silver ions in the electrode, and the silver ions are reduced during firing of the dielectric paste, and colloids are formed. And the dielectric layer is colored. As a method of suppressing the coloring of the dielectric layer, (1) suppression or suppression of the ion exchange reaction between the glass component in the dielectric paste and silver, and (2) silver ions having undergone the ion exchange reaction have moved to the dielectric layer. Even in such a case, there are methods for suppressing or suppressing the reduction of silver ions in the dielectric layer, and these methods can be applied in the present invention.

From this point, it is preferable that the glass component in the dielectric paste contains substantially no alkali metal. The term "substantially free" means that even if it is contained, it is 0.5% by weight or less, preferably 0.1% by weight or less.

Further, it is preferable that the glass component contains substantially no alkaline earth metal. This makes it possible to prevent the substrate from warping during firing and cracking during sealing. The coefficient of thermal expansion of the glass component in the dielectric paste is important for the warpage of the substrate, but even if the coefficient of thermal expansion matches the substrate glass, the alkaline earth metal in the glass component, such as barium, calcium, etc. 0.5% by weight content
If the temperature exceeds the above, an ion exchange reaction occurs with the glass component in the glass substrate or the electrode during firing. For this reason, the thermal expansion coefficient of the surface portion of the substrate glass and the dielectric layer glass component changes, and does not match the thermal expansion coefficient of the substrate glass, and a tensile stress is generated in the substrate glass to cause substrate cracking.

In the present invention, the inorganic component in the dielectric paste is made to have a coefficient of thermal expansion α ₅₀ within the range of ₅₀ to 400 ° C.
It is preferable to use a glass having a value of ₄₀₀ of 70 to 85 × 10 ⁻⁷ / K as a main component, because it matches the coefficient of thermal expansion of the substrate glass and reduces the stress applied to the glass substrate during firing.
If the coefficient of thermal expansion is out of this range, stress is applied to the surface on which the dielectric layer is formed so that the substrate is warped, and 70 × 10 −7 / K
If the value is less than the above range, a stress such that the substrate is warped is applied to the surface having no dielectric layer. Therefore, the substrate may be cracked when the substrate is repeatedly heated and cooled. In addition, when sealing with the front glass substrate, both substrates may not be parallel and cannot be sealed due to warpage of the substrates.

In order to suppress the thermal deformation of the glass substrate on which the electrodes are formed, the firing step of the dielectric precursor layer and the partition pattern is preferably performed at 400 to 600 ° C.
The range of 00 ° C is more preferable. For this reason, it is preferable that the inorganic component in the dielectric paste is mainly composed of glass having a glass transition point of 400 to 550 ° C and a softening point of 450 to 600 ° C. If the glass transition point is lower than 400 ° C. or the softening point is lower than 450 ° C., the glass may be melted in a later step, and the thickness uniformity and characteristics of the dielectric layer may be reduced. If the glass transition point is higher than 550 ° C. or the softening point is higher than 600 ° C., sintering on a glass substrate becomes insufficient, and the dielectric layer is liable to peel off or drop off.

As glass having such thermal characteristics,
Those containing 10 to 70% by weight of bismuth oxide are preferred because the glass transition point, softening point and thermal expansion coefficient can be easily controlled. Also, bismuth oxide 10 to 7
The use of 0% by weight of glass has advantages such as improving the stability of the dielectric paste. More specifically, those containing the following composition in terms of oxides are preferable, but not limited thereto.

Bismuth oxide 10 to 70% by weight Silicon oxide 3 to 50% by weight Boron oxide 10 to 40% by weight Zinc oxide 10 to 20% by weight Further, the inorganic component has a glass transition point of 400 to 550 ° C and a softening point of 450 to 600 ° C. It is preferred that the glass comprises 50 to 95% by weight of a glass and 5 to 50% by weight of a filler. Examples of the filler include at least one selected from the group consisting of high melting point glass having a softening point of 650 to 850 ° C., titania, alumina, silica, barium titanate, zirconia, and zircon.

The filler is mixed in order to reduce shrinkage during firing when forming a dielectric layer and to suppress warpage and cracking of the substrate. In addition, the incorporation of white filler such as ceramics increases the reflectivity of the dielectric layer and contributes to the improvement of the brightness of display light. The same effect can be obtained by blending a filler with a refractive index that is significantly different from that of low-melting glass. Can be.
As described above, in the present invention, in particular, the average particle size is 1 to 5
By using a filler having a thickness of μm, it becomes easy to set the center roughness Ra of the dielectric precursor layer to a range required in the present invention.

Here, as the high melting point glass, those having the following oxide conversion composition containing 15% by weight or more of each of silicon oxide and aluminum oxide are preferably used, but are not limited thereto.

Silicon oxide 15 to 50% by weight Boron oxide 5 to 20% by weight Aluminum oxide 15 to 50% by weight Barium oxide 2 to 10% by weight Next, a dielectric precursor layer having a surface roughness required in the present invention is prepared. Another preferred forming method will be described. This method is, as described above, a method of regulating the temperature at which the dielectric paste applied film is heat-treated.

Specifically, a method of forming a dielectric precursor layer by subjecting a dielectric paste coating film to a heat treatment at a temperature 5 to 50 ° C. lower than the lower limit temperature of sintering of the inorganic powder. By performing the heat treatment under such temperature conditions, the inorganic powder in the dielectric paste is not completely melted and sintered, and the dielectric precursor layer having a rough surface required in the present invention can be easily formed. it can. In this case, if the heat treatment temperature is excessively lowered, the degree of unsintering increases, and the inorganic powder constituting the dielectric precursor layer is lost, or the denseness of the dielectric precursor layer is reduced and finally formed. There is a concern that the electrical and mechanical properties of the dielectric layer may be reduced, so check the minimum sintering temperature of the inorganic powder in advance, and grasp the relationship between the difference from the heat treatment temperature and the resulting surface roughness, etc. You need precise control.

As a means for compensating for defects in density and strength caused by lowering the heat treatment temperature during the formation of the dielectric precursor layer, the firing of the inorganic powder in the dielectric paste is performed in the firing of the dielectric precursor layer and the partition pattern. 5 from the lower limit temperature
It is preferable to bake at a temperature higher by ~ 50 ° C. This makes it possible to convert the dielectric precursor layer to a dielectric layer and return to a state where the inherent characteristics can be exhibited.

The minimum sintering temperature of the inorganic powder is the lowest temperature at which the inorganic powder contained in the dielectric paste can be made dense by sintering. As a method of confirming that the sample is dense, there is a method of observing the inside of the dielectric layer of the fractured sample using an electron microscope or the like. That is, a state in which no bubbles are present in the dielectric layer, or a state in which bubbles are closed even if there are slightly bubbles, is defined as dense. It is necessary that the lower limit of the sintering temperature of the inorganic powder be accurately determined experimentally for each inorganic powder.

The relationship between the electrode thickness and the dielectric layer thickness is as follows. If the thickness of the dielectric layer is too small compared to the thickness of the electrode, the dielectric layer swells at the electrode portion and cracks may occur in the dielectric layer on the electrode, which is not preferable. Moreover, disconnection, meandering, or peeling may occur in the partition formed on such a dielectric layer, which is not preferable. On the other hand, if the thickness of the dielectric layer is too large as compared with the thickness of the electrode, poor binder removal occurs during firing, and cracks are likely to occur in the dielectric layer. Further, the stress caused by the dielectric layer applied to the substrate is increased, so that the substrate is warped, causing problems such as cracking of the substrate when firing the substrate or sealing the panel, which is not preferable. Further, when the dielectric layer is too thick, the discharge voltage of the panel becomes high, and normal discharge characteristics may not be obtained.

From this point, the thickness of the dielectric layer is 4 to 20 μm.
m is preferable. In order to obtain a dielectric layer thickness in such a range, the thickness of the applied dielectric paste must be controlled in consideration of the glass component content of the dielectric paste and the firing temperature. The thickness of the dielectric precursor layer is
Although it varies depending on the firing conditions, the thickness is preferably 4 to 40 μm.

In the present invention, it is necessary to form a partition pattern on the electrode and the dielectric layer precursor layer on which the electrode and the dielectric layer precursor layer have been formed, but a known method such as a screen printing method, a sand blast method, a transfer method and a photosensitive paste method is used. It is possible to form by applying the method of (1). After forming the partition pattern by these methods, the dielectric and the partition are formed by firing simultaneously with the dielectric precursor layer. The firing temperature is 400
-600 ° C is preferred, and 450-600 ° C is more preferred.

After the partition walls are formed, a phosphor layer having a uniform thickness is formed on the side surfaces of the partition walls and on the bottom between the partition walls, sealed with the front glass substrate, filled with gas, and further mounted with wiring. Thus, a plasma display can be obtained.

[0051]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to embodiments. However, the present invention is not limited to this. The center line average roughness Ra of the dielectric precursor layer was measured by a stylus type surface roughness meter (SE-3300, manufactured by Kosaka Laboratory Co., Ltd.). The concentrations in the examples are% by weight unless otherwise specified.

Example 1 [Preparation of electrode-formed glass substrate] Using a photosensitive silver paste containing silver powder having an average particle diameter of 3 μm, a pitch of 150 μm was used.
Stripe electrode pattern with a line width of 40 μm (silver content:
95%) formed on a 300 mm square glass substrate (PD-200 manufactured by Asahi Glass Co., Ltd.) is baked in air at 590 ° C. for 30 minutes to form a display substrate having a 3 μm-thick electrode formed on the glass substrate. I got

[Formation of Dielectric Precursor Layer] 30 g of a terpineol solution containing 5% of ethylcellulose, an average particle diameter of 0.
An inorganic component composed of 10 g of 24 μm titania and 60 g of bismuth oxide-containing glass was mixed and kneaded with a three-roller to obtain a dielectric paste. This paste is applied on a glass substrate on which electrodes are formed by a screen printing method to a thickness of 20 μm.
And dried and then heat-treated at 530 ° C. for 30 minutes to form a dielectric precursor layer.

The bismuth oxide-containing glass used in the examples had the following characteristics, and the minimum sintering temperature of the inorganic powder contained in the dielectric paste was 565 ° C.

Composition and properties of used glass containing bismuth oxide Composition: bismuth oxide 38%, silicon oxide 7%, boron oxide 1
9%, aluminum oxide 4%, zinc oxide 20%, barium oxide 12%. Average particle size 2.5 μm, glass transition point 47
5 ° C., softening point 515 ° C., coefficient of thermal expansion 75 × 10 ⁻⁷ / K.

[Formation and baking of partition pattern] γ-butyrolactone solution 3 containing 34% of copolymer (X-4007)
2 g, photosensitive monomer (MGP400) 10.5 g, photopolymerization initiator (IC-369) 3.4 g, sensitizer (DETX)
-S) 3.4 g, benzotriazole 2.2 g, ultraviolet absorber (Sudan IV) 0.04 g, and lithium oxide-containing glass 49 g were mixed and kneaded with a three-roll mill to obtain a photosensitive glass paste for partition walls. This paste was screen-printed several times on the dielectric precursor layer so as to have a dry thickness of 130 μm, and dried. A photomask (striped pattern, pitch 150 μm, line width 20 μm) is placed on the film formed in this manner, and is set to 12 mW / cm.
600m using an ultra-high pressure mercury lamp exposure machine with ² outputs
An exposure dose of J / cm ² was given.

A 0.2% aqueous solution of monoethanolamine kept at 35 ° C. was developed by showering for 120 seconds, and then washed with water. By performing such operations, a partition pattern was formed, and the photosensitive paste film in the unexposed portion was removed, and the surface of the dielectric precursor layer was exposed in the portion. Next, firing of the dielectric precursor layer and the partition pattern,
This was performed in air at 570 ° C. for 15 minutes to produce a plasma display substrate. Table 1 shows the Ra of the dielectric precursor layer and the state of the obtained substrate.

Further, a phosphor layer having a uniform thickness is formed on the side surfaces of the partition walls and on the bottom between the partition walls, sealed with the front glass substrate, filled with gas, and mounted with a wiring to manufacture a plasma display. As a result, an excellent display quality was obtained.

Example 2 The heat treatment temperature of the dielectric paste applied film was set to 15
A substrate for a plasma display was manufactured in the same manner as in Example 1, except that the temperature was set to be higher by ° C. Table 1 shows the results.

Example 3 The heat treatment temperature of the dielectric paste applied film was set to 25
A substrate for a plasma display was manufactured in the same manner as in Example 1, except that the temperature was set to be higher by ° C. Table 1 shows the results.

Example 4 The heat treatment temperature of the dielectric paste coating film was set to 30
A substrate for a plasma display was manufactured in the same manner as in Example 1, except that the temperature was set to be higher by ° C. Table 1 shows the results.

Example 5 The electrode thickness was 2 μm and the thickness of the dielectric paste coating film was 16 μm.
A substrate for a plasma display was manufactured in the same manner as in Example 3, except that m was used. Table 1 shows the results.

Example 6 A substrate for a plasma display was manufactured in the same manner as in Example 3, except that the electrode thickness was changed to 5 μm. Table 1 shows the results.

Example 7 The inorganic powder was 10 g of titania having an average particle size of 0.24 μm, 20 g of titania having an average particle size of 4 μm, and 50 g of bismuth oxide-containing glass, and the dielectric paste was deposited on a 3 μm-thick electrode to a thickness of 16 μm. A substrate for a plasma display was manufactured in the same manner as in Example 1 except that the substrate was applied and heat-treated at 570 ° C. to form a dielectric precursor layer. The heat treatment temperature in this case was 5 ° C. higher than the lower limit temperature of sintering, and sintering was sufficiently performed, so that the thickness of the dielectric layer before and after the formation of the partition walls did not change. Table 1 shows the results.

Example 8 The inorganic powder was 10 g of titania having an average particle size of 0.24 μm, 20 g of high melting point glass having an average particle size of 2.6 μm and a softening point of 750 ° C., and 50 g of bismuth oxide-containing glass. A substrate for a plasma display was manufactured in the same manner as in Example 1 except that a 16 μm-thick coating was applied on a 3 μm-thick electrode, and this was heat-treated at 570 ° C. to form a dielectric precursor layer. Table 1 shows the results.

Example 9 A plasma display substrate was manufactured in the same manner as in Example 8 except that the heat treatment temperature was changed to 540 ° C. Table 1 shows the results
Shown in

Comparative Example 1 Example 1 was repeated except that the heat treatment temperature of the dielectric paste was set to 5 ° C. higher than the lower limit temperature of the sintering of the inorganic powder. The results are shown in Table 2. Since the heat treatment temperature at the time of forming the dielectric precursor layer is high, the center line average roughness Ra of the dielectric precursor layer is as small as 0.2 μm, and the partition walls are peeled off.

Comparative Example 2 The coating thickness of the dielectric paste was 6 with respect to the electrode thickness of 3 μm.
Example 3 was repeated except that the thickness was changed to μm. The results are shown in Table 2. The thickness of the dielectric layer with respect to the electrode thickness, the balance of the dielectric layer thickness after the formation of the barrier ribs is poor, the center line average roughness of the dielectric precursor layer surface is also large as 2.10μm,
Inconvenience of the partition and cracking of the dielectric layer occur.

[0069]

[Table 1]

[0070]

[Table 2]

Description of abbreviations X-4007: weight average molecular weight obtained by adding 0.4 equivalent of glycidyl methacrylate to a carboxyl group of a copolymer composed of 40% methacrylic acid, 30% methyl methacrylate, and 30% styrene. A polymer having a carboxyl group and an ethylenically unsaturated group in a side chain of 43,000 and an acid value of 95.

MGP400: a compound represented by the following chemical formula

Embedded image

IC-369: Irgacure-369 (manufactured by Ciba Geigy) 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) butanone-1 DETX-S: 2,4-diethylthioxanthone

[0074]

According to the present invention, an electrode, a dielectric precursor layer, and a partition pattern are formed in this order on a substrate, and the dielectric precursor layer and the partition pattern are simultaneously fired to form the dielectric layer and the partition. A method of manufacturing a plasma display including a step of forming, wherein the center line average roughness Ra of the dielectric precursor layer is 0.3 to 2 μm. The partition wall pattern formed on the body precursor layer using the partition wall forming glass paste and the partition wall formation by baking thereof can be performed with good yield without causing defects such as partition wall peeling and cracking of the dielectric layer. Such a dielectric precursor layer contains 10 to 70% by weight of bismuth oxide, a glass component having a glass transition point of 400 to 550 ° C and a softening point of 450 to 600 ° C, and a filler having an average particle size of 1 to 5 µm. Or by setting the heat treatment temperature of the dielectric paste applied film to a temperature lower by 5 to 50 ° C. than the lower limit temperature of the sintering of the inorganic powder to form the dielectric precursor layer.

By these effects, a partition wall forming substrate for a plasma display having excellent characteristics can be manufactured at a high yield, and a plasma display with excellent display quality can be obtained.

Claims (8)

[Claims] A step of forming an electrode, a dielectric precursor layer, and a partition pattern on a substrate in this order, and simultaneously firing the dielectric precursor layer and the partition pattern to form a dielectric layer and a partition. A method of manufacturing a plasma display, comprising: a dielectric precursor layer having a center line average roughness Ra of 0.
A method for manufacturing a plasma display, wherein the thickness is 3 to 2 μm. 2. The method according to claim 1, wherein the thickness of the dielectric precursor layer is 4 to 40 μm. 3. The method according to claim 1, wherein the dielectric precursor layer has a glass transition point of 400 to 400.
The method according to claim 1, wherein the main component is glass having a softening point of 550 ° C. and a softening point of 450 to 600 ° C. 4. 4. The method according to claim 3, wherein the glass contains 10 to 70% by weight of bismuth oxide. 5. The method according to claim 1, wherein the dielectric precursor layer has a glass transition point of 400 to 400.
Glass having a softening point of 550 ° C and a softening point of
The method for producing a plasma display according to any one of claims 1 to 4, wherein the method comprises 5% by weight and 5 to 50% by weight of a filler. 6. The plasma according to claim 5, wherein the filler is at least one selected from the group consisting of high melting point glass having a softening point of 650 to 850 ° C., titania, alumina, silica, barium titanate, zirconia, and zircon. Display manufacturing method. 7. The method according to claim 5, wherein the filler has an average particle size of 1 to 5 μm. 8. A step of forming a dielectric precursor layer by applying a dielectric paste containing an inorganic powder and an organic component, and performing a heat treatment at a temperature 5 to 50 ° C. lower than the lower limit of sintering of the inorganic powder. A method for manufacturing the plasma display according to claim 1.