JP2000003943A - Film carrier and its manufacture and semiconductor device using the film carrier - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film carrier which can cope enough with a reduction in semiconductor device wiring pitch and an enhancement in mounting density and be lessened in mounting density and where inner leads and outer leads can be surely bonded, a semiconductor device provided with the film carrier, and a manufacturing method of the film carrier. SOLUTION: Conductive circuits 5 are buried in an insulating layer 6 so as not to be exposed through the surfaces 6a and 6b of the insulating layer 6, and conduction paths 7 and 8 are provided to the conductive circuits 5 so as to be paired up extending from the surfaces 5a and 5b of the conductive circuits 5 and deviating from each other in position in the plane direction of the conduction circuit 5. The conduction paths 7 and 8 are each connected to bumps 9 and 10 so as to electrically connect the conductive circuits 5 to the bumps 9 and 10. The bumps 9 formed on the one edges of the conduction paths 7 are brought into contact with electrodes 12 provided to a semiconductor device 3, and the semiconductor device 3 is mounted on a film carrier 2. An insulating resin layer 4 is formed on the one side 6a of the insulating layer 6 so as to cover the semiconductor device 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a film carrier, a semiconductor device using the same, and a method of manufacturing the film carrier.

[0002]

2. Description of the Related Art Conventionally, a film carrier method has been adopted as a method for mounting a semiconductor element. A metal projection for connection (hereinafter referred to as a metal projection) is used for inner bonding between a lead on the film carrier and an electrode of the semiconductor element. "Bump") is used.

However, when the above-mentioned bump is formed on the electrode surface of the semiconductor element, usually, a metal layer for adhesion such as titanium and chromium and a diffusion of bump metal such as copper, platinum and palladium are formed on the electrode surface. It is necessary to form a barrier metal layer by a sputter etching method or a vapor deposition method, and to form a bump such as gold on the barrier metal layer, which makes the process extremely complicated. Furthermore, there is a possibility that the semiconductor element and the electrode surface may be contaminated or damaged in the bump forming step on the electrode surface.

As a bonding method that does not form a bump on the electrode surface as described above, a method using a so-called anisotropic conductive film having conductivity in the thickness direction of the film has been proposed. Specifically, an insulating film in which conductive particles such as carbon black, graphite, nickel, copper, and silver are oriented and dispersed in an insulating film is used. However, if the orientation of the dispersed conductive particles is insufficient, the electrical connection between the electrode portion of the semiconductor element and the lead portion of the film carrier becomes uncertain, and there is a problem in connection reliability. It is.

On the other hand, there has been proposed a method of forming a bump on the lead side of a film carrier and directly connecting the bump to an electrode portion of a semiconductor element. However, this method makes it difficult to form circuits and bumps corresponding to such a semiconductor element on a film carrier when the wiring of the semiconductor element has a fine pitch or has a high density. You also need to be very careful.

Further, when a conventionally used film carrier having a wiring circuit and a lead portion on the surface of an insulating film is used, the outer lead bonding area is usually larger than the inner lead bonding area. The final mounting area is larger than the size (area) of the semiconductor element, and if further miniaturization is required in the future, it may not be possible to sufficiently cope with it.

Further, in order to protect the semiconductor element after mounting, the periphery of the semiconductor element is often sealed with an insulating resin. In the conventional film carrier, since the conductive circuit is exposed, the insulating resin used for sealing directly contacts the conductive circuit. However, since the insulating resin and the metal substance forming the conductive circuit have low adhesion, moisture in the air may enter the interface to reduce the reliability of the semiconductor device.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and can sufficiently cope with fine pitch and high-density mounting of semiconductor element wiring. An object of the present invention is to provide a film carrier capable of performing a reliable connection operation even in lead bonding and reducing the mounting area as much as possible, a semiconductor device using the same, and a method of manufacturing the film carrier.

It is another object of the present invention to provide a highly reliable semiconductor device having excellent adhesion between an insulating resin used for sealing a semiconductor element and a film carrier.

[0010]

SUMMARY OF THE INVENTION The present inventors differ from conventional film carriers in that a conductive circuit is embedded in a film without forming the conductive circuit on the surface of the insulating film, and the conductive circuit is exposed on the surface of the insulating film. So that only the end of the conductive path connected to the buried conductive circuit is exposed on the film surface, and the end is used to connect to the electrode of the semiconductor element or to the land of the external substrate. As a result, they have found that a film carrier that can achieve the object of the present invention can be obtained, and have completed the film carrier of the present invention.

The present inventors can achieve the object of the present invention by mounting a semiconductor element on the semiconductor element mounting portion of the film carrier and sealing the periphery of the semiconductor element with an insulating resin. They have found that a semiconductor device can be obtained, and have completed the semiconductor device of the present invention. That is, the present invention provides a film characterized in that a conductive circuit is buried in an insulator layer so that the conductive circuit is not exposed on the surface, and a conductive path extending from the conductive circuit to both surfaces of the insulator layer is formed. Offer a career.

In particular, the present invention provides a film carrier in which the surface of the insulator layer of the semiconductor element mounting portion is processed into a concave shape.

Another object of the present invention is to provide a film carrier in which a through hole is formed in the insulator layer of the semiconductor element mounting portion.

Further, the present invention provides a semiconductor device in which an electrode of a semiconductor element is connected to one end of a conduction path of the film carrier and the semiconductor element is mounted.

In particular, the present invention provides a semiconductor device in which the semiconductor element is sealed with an insulating resin.

Another object of the present invention is to provide a semiconductor device in which the insulating resin is a low elastic elastomer resin.

In the present invention, the term "semiconductor element" refers to a semiconductor element assembly (such as a silicon chip after dicing),
Includes circuit boards for mounting semiconductor devices, circuit boards for LCDs, fine-pitch circuit boards such as hybrid ICs, etc., and "conductive circuit" is a broad concept that includes not only wiring patterns but also electrodes and leads. is there.

[0018]

According to the film carrier of the present invention, the conductive circuit is buried in the insulator layer so as not to be exposed on the surface, and the conductive path extending from the conductive circuit to both surfaces of the insulator layer is formed. Therefore, the pattern shape of the conductive circuit can be freely designed without being influenced by the pattern shape of the semiconductor element. In addition, by forming the conductive circuit in multiple layers, the three-dimensional design becomes easy, and the fine pitch is improved. Or high-density mounting. Also,
The insulating resin that seals the semiconductor element does not come into contact with the conductive circuit, and the insulating resin and the insulating layer come into direct contact to form an interface. Therefore, the adhesiveness between the insulating resin and the insulator layer is excellent, moisture is prevented from entering the interface, and the reliability as a semiconductor device is greatly improved.

In particular, when the surface of the insulator layer of the semiconductor element mounting portion is processed into a concave shape, the semiconductor element is dropped into the concave portion when the semiconductor element is mounted on the film carrier. The electrode and one end of the conductive path can be connected, which facilitates positioning and improves connection reliability.

In the case where a through hole is formed in the insulator layer of the semiconductor element mounting portion, winding of a void or the like is prevented when the semiconductor element is sealed. further,
Since the contact area between the insulating resin and the insulator layer is increased, the adhesive strength of the insulating resin is improved.

According to the semiconductor device of the present invention, the electrode of the semiconductor element is connected to one end of the conductive path of the film carrier, and the semiconductor element is mounted. It can fully cope with high-density mounting.

In particular, when the semiconductor element is sealed with an insulating resin, the adhesion between the insulating resin and the insulating layer is excellent, and moisture or the like enters the interface for the above-described reason. This significantly improves the reliability of the semiconductor device.

When the insulating resin is a low-elastic elastomer resin, adverse effects due to stress on the semiconductor element are prevented, and the reliability of the semiconductor device is greatly improved.

[0024]

EXAMPLES Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited to these Examples.

FIG. 1 is a sectional view showing a first embodiment of a semiconductor device using the film carrier of the present invention. FIG.
The semiconductor device 1 shown in FIG. 1 includes an anisotropic conductor film carrier 2, a semiconductor element 3 mounted on a semiconductor element mounting portion of the film carrier 2, and an insulating resin layer 4 for sealing the semiconductor element 3. Have been.

In the film carrier 2, the conductive circuit 5
Are provided on both sides 6 of the insulator layer 6 within the insulator layer 6 having flexibility.
a, 6b, which are buried so as not to be exposed, and extend from both surfaces 5a, 5b of the conductive circuit 5 to both surfaces 6a, 6b of the insulator layer 6, respectively, in the direction of the surface of the conductive circuit 5. It is formed in pairs with a shift. Each conduction path 7, 8
Are connected to bumps 9 and 10 formed so as to protrude outward from both surfaces 6a and 6b of the insulator layer 6, respectively.
The conductive circuit 5 is electrically connected to the bumps 9 and 10 via the conductive paths 7 and 8.

One of the conductive paths 7 of the film carrier 2
The bump 9 formed at one end of the film carrier 2 contacts and is electrically connected to the electrode 12 formed on one surface of the substrate 11 of the semiconductor element 3, and the semiconductor element 3 is mounted on the film carrier 2. Further, so as to cover the semiconductor element 3,
An insulating resin layer 4 is formed in contact with one surface 6a of the insulator layer 6.

By connecting the bumps 10 of the semiconductor device 1 thus formed to lands on an external substrate (not shown), the electrodes 12 of the semiconductor element 3 and the lands are in different directions (the thickness direction of the insulator layer 6). ).

The material for forming the conductive circuit 5 is not particularly limited as long as the material has conductivity, for example, metal. Although the thickness of the conductive circuit 5 is not particularly limited,
It is preferable to set the thickness to 1 to 200 μm, preferably 5 to 80 μm.

As a material for forming the insulator layer 6 used in the film carrier 2 of the present invention, the conductive circuit 5, the conductive paths 7, 8 and the bumps 9, 10 are stably supported, and the electric insulating property is substantially improved. It is not particularly limited as long as it has. Specifically, polyester resin, epoxy resin, urethane resin, polystyrene resin, polyethylene resin, polyamide resin, polyimide resin, acrylonitrile-butadiene-styrene (ABS) copolymer resin, polycarbonate resin, Silicone resin,
A thermosetting resin such as a fluorine-based resin or a thermoplastic resin is exemplified. Among them, a polyimide-based resin having excellent heat resistance, dimensional stability by heating, and mechanical strength is particularly preferably used.

The thickness of the insulator layer 6 is not particularly limited, but is preferably set to 2 to 500 μm, preferably 5 to 150 μm in order to have sufficient mechanical strength and flexibility.

The material for forming the conductive paths 7 and 8 and the bumps 9 and 10 is not particularly limited as long as it has conductivity, and known metal materials can be used. For example, gold, silver, copper, Single metals such as platinum, lead, tin, nickel, cobalt, indium, rhodium, chromium, tungsten, ruthenium, or various alloys containing these,
For example, solder, nickel-tin, gold-cobalt, and a conductive paste in which a conductive powder is dispersed may be used.

The material forming the conductive paths 7 and 8 may be the same or different from the material forming the bumps 9 and 10, but usually the same material is used. In this case, it is preferable that the conductive paths 7 and 8 and the bumps 9 and 10 are formed integrally. Further, as shown in FIG. 2, a structure using three types of forming materials may be employed. That is, an inexpensive metal material such as copper is used for the conductive path portion 13 connected to the conductive circuit 5, and the electrode 1 of the semiconductor element 3 is used.
Gold or the like having high connection reliability is used for the surface layer 14 of the bump 9 connected to the bump 2. For the intermediate layer 15 interposed between the conduction path portion 13 and the surface layer 14, nickel or the like is used as a barrier metal material for preventing the mutual reaction of the metal material. Furthermore, the present invention is not limited to the structure using the above three types of forming materials, but may be formed into a multilayer structure using four or more types of forming materials.

The height of the bumps 9 and 10 is not particularly limited, but is preferably about several μm to several tens μm. The shape of the bumps 9 and 10 may be a mushroom (umbrella) or hemisphere as shown in FIG. 1, or may be a prism, cylinder, sphere, or cone (cone or pyramid). Further, the shapes of the bottom surfaces of the bumps 9 and 10 are as follows.
It may be a triangle, square, rectangle, trapezoid, parallelogram, or other polygon. Protruding the bumps 9 and 10 outward from both surfaces 6a and 6b of the insulator layer 6 as described above facilitates positioning at the time of connection with the electrode 12 of the semiconductor element 3 and the land portion of the external substrate (not shown). It is effective for reliability and connection reliability. It should be noted that the present invention also encompasses an embodiment in which the conductive paths 7 and 8 are formed up to the same plane as the both surfaces 6a and 6b of the insulator layer 6 without the end of the conductive path rising in a bump shape. Needless to say. That is, it can be arbitrarily designed according to the layout of the semiconductor element to be mounted, the external board to be connected, the shape of the circuit, and the like.

As a material for forming the insulating resin layer 4 for encapsulating the semiconductor element 3, a known material such as an epoxy resin or a silicone resin can be used. In the present embodiment, since the insulating resin layer 4 for sealing the semiconductor element 3 has no portion in contact with the conductive circuit 5 such as a metal lead, and directly contacts the insulator layer 6 to form an interface. Insulator layer 6
With excellent adhesion to water, moisture does not enter the interface, and the reliability as a semiconductor device is greatly improved.

FIG. 3 is a sectional view showing a second embodiment of the semiconductor device using the film carrier of the present invention. In this embodiment, the portions denoted by reference numerals in FIG. 1 indicate the same or corresponding portions. Semiconductor device 1 shown in FIG.
It should be noted that a recess 6c for accommodating the semiconductor element 3 is formed on one surface 6a of the insulator layer 6, and a bump 9 is formed on a bottom surface 6d of the recess 6c. The recess 6c needs to be set to be equal to or larger than the outer shape of the semiconductor element 3. Furthermore, when the semiconductor element 3 is mounted on the film carrier 2, the size and the position accuracy are set so that a positional shift does not occur between the electrode 11 of the semiconductor element 3 and the bump 9 of the film carrier 2. I do.

When the electrode 12 of the semiconductor element 3 protrudes, a concave part may be formed in a multi-stage shape, and a fitting concave part for fitting the semiconductor element 3 is formed on one surface 6 a of the insulator layer 6. Further, the electrode 12 of the semiconductor element 3 is
May be formed.

By forming the recess 6c for accommodating the semiconductor element 3 on one surface 6a of the insulator layer 6 on the semiconductor element 3 side, the semiconductor element 3 is dropped into the recess 6c when the semiconductor element 3 is mounted. Electrode 11 of semiconductor element 3
And the bumps 9 of the film carrier 2 can be connected, so that the positioning and connection operation are extremely simple,
Connection reliability is improved. Further, when the semiconductor device 3 is mounted on the film carrier 2 to form the semiconductor device 1, the overall thickness is reduced, which is effective in reducing the thickness and weight.

FIG. 4 is a sectional view showing a third embodiment of the semiconductor device using the film carrier of the present invention. FIG.
It should be noted that the conductive path 8 of the outer lead bonding portion is higher than the conductive path 7 (the upper side in FIG. 4) of the inner lead bonding portion.
This is a point that the pitch (lower side in FIG. 4) is narrowed. By designing in this way, the size (area) can be reduced as compared with the conventional semiconductor device.

FIG. 5 is a sectional view showing a fourth embodiment of the semiconductor device using the film carrier of the present invention. FIG.
It should be noted that the conductive circuit 5 has a multilayer structure. That is, the conductive circuit 5 buried in the insulator layer 6 is formed by connecting the first and second conductive circuits 16 and 17 stacked apart from each other in the thickness direction via the conductive path 18. In addition, conductive paths 7 and 8 are formed to extend from the outer surfaces of the conductive circuits 16 and 17 to both surfaces 6a and 6b of the insulator layer 6, respectively. It is preferable that the conductive circuit 5 has a multi-layered structure, since the conductive circuit 5 has a greater degree of freedom in wiring design of a semiconductor element than a single-layer conductive circuit.

FIG. 6 is a sectional view showing a fifth embodiment of the semiconductor device using the film carrier of the present invention. FIG.
It should be noted that a fine through hole 19 penetrating the insulator layer 6 in the thickness direction is formed in the semiconductor device 1 shown in FIG. The diameter of the fine through-hole 19 is not particularly limited as long as no problem occurs in the strength of the insulator layer 6. Further, it is preferable to form a plurality of fine through holes 19 and arrange the arrangement as evenly as possible.

By forming the fine through holes 19,
When the semiconductor element 3 is sealed, winding of a void or the like is prevented. Furthermore, since the contact area between the resin of the insulating resin layer 4 for sealing the semiconductor element 3 and the insulator layer 6 increases, the adhesive strength of the insulating resin improves.

In FIG. 6, an adhesive layer 20 is interposed to ensure the connection between the semiconductor element 3 and the film carrier 2. As a material for forming the adhesive layer 20, an epoxy-based resin, a fluorine-based resin, a polyimide-based resin, or the like can be used, and a thermoplastic resin that exhibits adhesiveness by thermocompression bonding is preferable. In addition, the adhesive layer 20 can be used by previously laminating it on either the semiconductor element side or the film carrier side, or in the form of a film or ribbon and interposing at the time of connection.
When the adhesiveness between the material for forming the adhesive layer 20 and the insulator layer 6 is low, the adhesive may be partially peeled off, and moisture or the like may enter the interface through the fine through holes 19. Therefore, it is preferable that the sealing material 21 for sealing the adhesive layer 20 is filled in the fine through holes 19. As a material for forming the sealing material 21, a material having good adhesion is appropriately selected according to a material for forming the insulator layer 6 to be used.

In the semiconductor device 1 having the semiconductor element 3 mounted on the film carrier 2 as described above, the bump 10 on the side opposite to the semiconductor element 3 is connected to the land 23 of the external substrate 22 as shown in FIG. And implemented.

FIG. 7 is a sectional view showing a sixth embodiment of the semiconductor device using the film carrier of the present invention. FIG.
It should be noted that the semiconductor element 3 is covered with an elastomer resin layer 24, and the semiconductor element 3 and the elastomer resin are formed on an insulating resin layer 4 made of a thermosetting resin such as an epoxy resin. That is, the layer 24 is covered. As a material for forming the elastomer resin layer 24, a fluorine-based resin, a silicone-based resin, or the like is preferable, and as a sealing method, a method such as potting or casting is suitably adopted. By interposing the low-elasticity elastomer resin layer 24 between the insulating resin layer 4 and the semiconductor element 3 in this manner, adverse effects due to stress on the semiconductor element are prevented, and the elastomer resin layer 24 and the insulating resin Since the adhesion to the layer 4 is good, the layers 4 and 24 are firmly adhered to each other, and the reliability as a semiconductor element is greatly improved.

FIG. 8 is a sectional view showing a seventh embodiment of the semiconductor device using the film carrier of the present invention. FIG.
The semiconductor device 1 shown in FIG. 3 is a composite of the characteristic portions of the semiconductor devices 1 shown in FIGS. 3, 6, and 7. It should be particularly noted in the semiconductor device 1 shown in FIG. 8 that the elastomer resin extends to the inside of the fine through hole 19 and is filled, and the sealing material 21 for sealing the elastomer resin is formed of the semiconductor material of the insulator layer 6. Surface 6b opposite to element 3 side
It is a point formed in.

FIG. 9 is a sectional view showing an eighth embodiment of a semiconductor device using the film carrier of the present invention. FIG.
As shown in FIG. 2, the fitting recess 6c is formed on one surface 6a of the insulator layer 6 so as to fit the semiconductor element 3 to be mounted.
Is simply dropped into the fitting recess 6c. Further, by using solder as a conductive material of the bump 9 to be connected to the semiconductor element 3, the bump 9
Can be easily connected only by heating the substrate, and the process can be simplified.

FIG. 10 is a sectional view showing a ninth embodiment of the semiconductor device using the film carrier of the present invention. When solder bumps are used, as shown in FIG. 10, even if the size of the recess 6c formed on one surface 6a of the insulator layer 6 is somewhat larger than the size of the semiconductor element 3,
The self-alignment effect due to the fusion of the solder occurs,
The semiconductor element 3 shifts in the direction of arrow A. Therefore, precise positioning is not required.

In the film carrier 2 shown in FIGS. 1 to 10 described above, the conductive path 7 of the inner lead bonding section and the conductive path 8 of the outer lead bonding section have different pitches. Also includes a mode in which the pitch of the conductive paths 7 and 8 is the same.

FIG. 11 is a cross-sectional view showing a manufacturing process of the semiconductor device 1 shown in FIG. 1, and can be manufactured, for example, as follows.

First, as shown in FIG. 11A, a conductive circuit 5 such as a copper circuit is formed on one surface 61a of the first insulator layer 61 by a known method. First insulator layer 61
As a method for forming the conductive circuit 5 on the one surface 61a, a plating method, a sputtering method, a CVD method, or the like can be used.

Thereafter, as shown in FIG.
A first hole 63 reaching the surface 5a of the conductive circuit 5 is formed only in the first insulator layer 61 in the insulator layer 61 in a region where a conductive path is to be formed, and the conductive circuit 5 is formed at the bottom of the first hole 63.
Is exposed. Examples of the method of forming the first hole 63 include mechanical punching such as punching, photolithography, plasma processing, chemical etching, and the like.
Laser processing and the like can be mentioned. In order to cope with fine pitch, laser processing capable of fine processing is preferable, and in particular, it is preferable to use perforation processing using an ultraviolet laser having an oscillation wavelength in an ultraviolet region. The hole thus formed is 5 to 200 μm, preferably 8 to 100 μm
It is formed to the size of about.

Next, as shown in FIG. 11 (C), the second insulator layer 6 is formed by thermocompression bonding, extrusion molding, casting coating or the like so as to cover the exposed surface 5b of the conduction circuit 5.
2 and the conductive circuit 5 is buried. The second insulator layer 62 may be formed from the same resin as the first insulator layer 61 or from a different resin.

The film carrier of the present invention comprises an insulating layer 6
A conductive circuit 5 is buried therein, and the conductive circuit 5 is not exposed on both surfaces 6a and 6b of the insulator layer 6. As a method of embedding the conductive circuit 5, it is preferable that the conductive circuit 5 be laminated so as to be sandwiched between the first and second insulator layers 61 and 62 from the viewpoint of easy manufacture.

Thereafter, as shown in FIG.
In the same manner as described above, a second hole 64 reaching the surface 5b of the conductive circuit 5 is formed in the second insulator layer 62.

Next, as shown in FIG. 11E, the first and second holes 63 and 64 are filled with a conductive material, respectively, to form the conductive paths 7 and 8 and the bumps 9 and 10, A film carrier 2 is obtained.

As a method for filling the first and second holes 63 and 64 with a conductive material, a plating method such as electrolytic plating or electroless plating, a CVD method, or a method of immersing the conductive material in a molten metal bath to precipitate the conductive material. Examples thereof include a chemical filling method such as a method, and a physical filling method in which a conductive substance is injected under pressure, and a method by electrolytic plating using the conductive circuit 5 as an electrode is preferable because it is a simple method. Therefore, the filling of the conductive material in the present invention is a broad concept including not only physically embedding the conductive material but also the above-described chemical deposition.

Note that the first and second holes 63 and 64 may be formed after the first and second insulator layers 61 and 62 are laminated, or a conductive material may be filled after the first hole 63 is formed. After the formation of the conductive path 8 and the bump 10, the second hole 64 may be formed. Next, as shown in FIG. 11 (F), the semiconductor element 3 is mounted on the film carrier 2, and the bumps 9 of the film carrier 2 and the electrodes 12 of the semiconductor element 3 are bonded by thermocompression, ultrasonic waves, reflow, or the like. Connect using. The connection method is appropriately selected depending on the kind of metal constituting the electrode 12.

Finally, as shown in FIG.
The semiconductor device 1 is obtained by sealing the periphery of the semiconductor element 3 connected to the film carrier 2 with the insulating resin layer 4. As a sealing method, a known method such as transfer molding, potting, and casting is adopted.

As shown in FIG. 3 and FIGS. 8 to 10, when the recess 6c for housing the semiconductor element 3 is formed on one surface 6a of the insulator layer 6, the process shown in FIG. A method similar to the method of forming the first hole 63 is employed.

[0061]

As described above, according to the film carrier of the present invention, the pattern shape of the conductive circuit can be freely designed without being affected by the pattern shape of the semiconductor element. By forming
Dimensional design is also facilitated, and it can sufficiently cope with fine pitch and high-density mounting. Further, the adhesiveness between the insulating resin for sealing the semiconductor element and the insulator layer of the film carrier is excellent, and the intrusion of moisture or the like into the interface is prevented, and the reliability as a semiconductor device is greatly improved.

In particular, when the surface of the insulator layer of the semiconductor element mounting portion is processed into a concave shape, the semiconductor element is dropped into the concave portion when the semiconductor element is mounted on the film carrier. The electrode and one end of the conductive path can be connected, which facilitates positioning and improves connection reliability.

In the case where a through hole is formed in the insulator layer of the semiconductor element mounting portion, when the semiconductor element is sealed, winding of a void or the like is prevented. further,
Since the contact area between the insulating resin and the insulator layer is increased, the adhesive strength of the insulating resin is improved.

According to the semiconductor device of the present invention, the electrode of the semiconductor element is connected to one end of the conductive path of the film carrier, and the semiconductor element is mounted. Can respond to.

In particular, when the semiconductor element is sealed with an insulating resin, it has excellent adhesion between the insulating resin and the insulating layer, and prevents moisture and the like from entering the interface.
The reliability as a semiconductor device is greatly improved.

When the insulating resin is a low-elastic elastomer resin, adverse effects due to stress on the semiconductor element are prevented, and the reliability of the semiconductor device is greatly improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of a semiconductor device using a film carrier of the present invention.

FIG. 2 is a partial cross-sectional view showing a modified example of a bump.

FIG. 3 is a sectional view showing a second embodiment of a semiconductor device using the film carrier of the present invention.

FIG. 4 is a sectional view showing a third embodiment of the semiconductor device using the film carrier of the present invention.

FIG. 5 is a sectional view showing a fourth embodiment of the semiconductor device using the film carrier of the present invention.

FIG. 6 is a sectional view showing a fifth embodiment of the semiconductor device using the film carrier of the present invention.

FIG. 7 is a sectional view showing a sixth embodiment of the semiconductor device using the film carrier of the present invention.

FIG. 8 is a sectional view showing a seventh embodiment of a semiconductor device using the film carrier of the present invention.

FIG. 9 is a sectional view showing an eighth embodiment of a semiconductor device using the film carrier of the present invention.

FIG. 10 is a sectional view showing a ninth embodiment of a semiconductor device using the film carrier of the present invention.

11 is a cross-sectional view showing a manufacturing step of the semiconductor device 1 shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Film carrier 3 Semiconductor element 4 Insulating resin layer 5 Conductive circuit 6 Insulating layer 6a, 6b Insulating layer surface 6c Depression 7,8 Conducting path 9,10 Bump 12 Electrode 24 Elastomer resin layer 63,64 Hole Department

Claims (13)

[Claims] 1. A film carrier in which a conductive circuit is buried in an insulator layer so as not to be exposed on the surface and a conductive path extending from the conductive circuit to both surfaces of the insulator layer is formed. A film carrier, wherein a multi-stage recess is formed in a mounting portion. 2. A film carrier, wherein a conductive circuit is buried in an insulator layer so as not to be exposed on the surface and a conductive path extending from the conductive circuit to both surfaces of the insulator layer is formed. A film carrier, wherein the passage is formed in a multilayer structure. 3. A film carrier which is embedded in an insulator layer so that a conductive circuit is not exposed on the surface, and has a conduction path formed from the conductive circuit to both surfaces of the insulator layer, wherein the inner lead is provided. A film carrier, wherein the pitch of the outer lead bonding portion is smaller than the pitch of the conduction path of the bonding portion. 4. A film carrier which is embedded in an insulator layer so that a conductive circuit is not exposed on the surface, and in which a conductive path extending from the conductive circuit to both surfaces of the insulator layer is formed. A film carrier, wherein the pitch of the inner lead bonding portion is smaller than the pitch of the conduction path of the bonding portion, or the former pitch is equal to the latter pitch. 5. The film carrier according to claim 1, wherein a through hole is formed in the insulator layer of the semiconductor element mounting portion. 6. A semiconductor device comprising the semiconductor element mounted thereon, wherein an electrode of the semiconductor element is connected to one end of the conduction path of the film carrier according to claim 1, 2, 3, or 4. 7. The semiconductor device according to claim 6, wherein said semiconductor element is sealed with an insulating resin. 8. The semiconductor device according to claim 7, wherein the insulating resin is a low-elasticity elastomer resin. 9. A method for manufacturing a film carrier in which a conductive circuit is buried in an insulator layer so as not to be exposed on the surface and a conductive path extending from the conductive circuit to both surfaces of the insulator layer is formed. The conductive circuit may be configured such that the pitch of the conductive path of the inner lead bonding portion is smaller than the pitch of the conductive path of the outer lead bonding portion, or the former pitch is equal to the latter pitch. A method comprising providing a hole reaching both surfaces of a layer, and filling the hole with a conductive material to form the conductive path. 10. The method for manufacturing a film carrier according to claim 9, wherein the surface of the insulator layer of the semiconductor element mounting portion is processed into a concave shape. 11. The method for producing a film carrier according to claim 10, wherein a concave portion is further formed in the portion processed into the concave shape to form a multi-stage shape. 12. The method for manufacturing a film carrier according to claim 9, wherein the conductive path is formed in a multilayer structure using a plurality of types of conductive materials. 13. The method for manufacturing a film carrier according to claim 9, wherein a through hole is formed in said insulator layer of said semiconductor element mounting portion.