JPH0590349A - Film with electrode, film carrier, and semiconductor device using them - Google Patents

Abstract

PURPOSE:To obtain a film with an electrode and a film carrier which facilitate positioning of a semiconductor chip. CONSTITUTION:A recess 2 flat-shaped or multistep-shaped in the bottom is formed in one face of an insulating film 1, and this recess 2 is bottomed with a predetermined number of microthroughholes 3 in the thickness direction, where arbitrary microthroughholes 3 are filled with a conductive substance to form conduction paths 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film with an electrode, a film carrier, and a semiconductor device using them.

[0002]

2. Description of the Related Art In recent years, the number of electrodes of a semiconductor device has increased with the progress of semiconductor high integration technology and its high-density packaging technology.
The pitch is increasing every year. Also, the resolution of the printer or display device obtained using this semiconductor device,
The wiring density of printed circuit boards is also shifting to a high level. Moreover, it is desired that the semiconductor device be formed thinner and lighter. Under such circumstances, the film carrier method has been conventionally adopted as one of the mounting methods of the semiconductor element that constitutes the semiconductor device. Various methods have been proposed as a bonding method (inner lead bonding) between the finger-shaped leads and the semiconductor element in the film carrier method, but bump-shaped electrodes (protruding electrodes) are formed on the electrode surface of the semiconductor element, A method of bonding to a lead on a film carrier by using this bump-shaped electrode (hereinafter abbreviated as "bump") is partially implemented. However, such a bonding method has the following drawbacks.

It is difficult to align the bumps of the semiconductor element with the leads on the film carrier.

In the step of forming a bump on the electrode surface of the semiconductor element, an adhesive layer made of a metal such as titanium or chromium and a metal such as copper, platinum or palladium for preventing the diffusion of the bump forming metal is formed on the electrode surface. The barrier layer is formed by a method such as sputter etching or vapor deposition, and a complicated step of forming bumps made of gold or the like by a plating method is required. Further, it is difficult to control the bump shape to form a uniform height, and the semiconductor element is contaminated or damaged during the bump forming process.

As a bumpless film carrier system, a bonding method using an anisotropic conductive film has been proposed and partially implemented (Japanese Patent Laid-Open No. 63-4633). The anisotropic conductive film is obtained by dispersing conductive particles of carbon black, graphite, nickel, copper, silver or the like in the electrically insulating resin film and orienting the particles in the thickness direction of the film. However, if the orientation of the conductive particles in the anisotropic conductive film is insufficient, inner lead bonding between the electrode portion of the semiconductor element and the lead becomes uncertain, and the connection reliability may decrease.

The present invention has been made in view of the above circumstances, and an object thereof is to obtain a film with an electrode, a film carrier, and a semiconductor device having high connection reliability using the film, in which the semiconductor element can be easily positioned. ..

[0007]

In order to achieve the above object, the present invention provides a recess having a flat or multi-stepped bottom surface on one surface of an insulating film, and the bottom surface of the recess is formed in the thickness direction. The first gist is a film with an electrode in which a predetermined number of fine through holes are formed, and a conductive substance is filled in any of the fine through holes to form an electrode portion, and a concave portion is formed on one surface of the insulating film. A plurality of fine through holes are formed in the bottom surface of the recess in the thickness direction, and a circuit is formed by a conductor on the other surface of the insulating film corresponding to the bottom surface of the recess to form the circuit. A second gist is a film carrier in which a conductive material-made conductive path is formed only in a part of the fine through-hole, and a tip of the conductive path is formed on the bump-shaped electrode portion so as to project from at least one of the openings of the fine through-hole. Above electrode A semiconductor device in which a semiconductor element is housed in a recess of a film, and an electrode portion of the semiconductor element is electrically connected to an electrode portion of a film with an electrode is defined as a third gist, and a semiconductor device is provided in the recess of the film carrier. A fourth aspect is a semiconductor device in which an element is housed and the electrode portion of the semiconductor element is electrically connected to the bump-shaped electrode portion of the film carrier.

[0008]

That is, the electrode-attached film and the film carrier of the present invention have a recess for accommodating a semiconductor element or for accommodating a semiconductor element electrode formed on one side of an insulating film, and the bottom surface of this recess is electrically connected in the thickness direction. An electrode portion for establishing conduction is formed. Therefore, when mounting a semiconductor element,
Positioning can be facilitated by dropping the semiconductor element or the semiconductor element electrode into the recess. Further, the semiconductor device having the semiconductor element housed in the recess is thinner than the conventional one.
In particular, when the electrode-equipped film and the electrodes of the film carrier are formed on the bumps, the dropping ensures the conduction, and the connection reliability increases. Further, by making the fine through holes finer, it is possible to cope with the fine pitch of the semiconductor element wiring, and further, the electrode portions of the semiconductor element can be freely laid out within the element plane. Therefore, the degree of freedom in the wiring design of the semiconductor element is improved.

Next, the present invention will be described in detail.

An electrode-attached film and a film carrier of the present invention include an insulating film having a recess formed on one surface,
Using a conductive substance for forming a conductive path formed in the fine through holes on the bottom surface of the recess, for the film carrier,
Furthermore, it is obtained by using a circuit formed on the other surface of the insulating film.

The insulating film is not particularly limited as long as it is a film having electric insulating properties, and examples thereof include polyester resin, epoxy resin, urethane resin, polystyrene resin, polyethylene resin, polyamide resin. Examples thereof include thermosetting resins such as resins, polyimide resins, acrylonitrile-butadiene-styrene (ABS) copolymer resins, polycarbonate resins, silicone resins, and thermoplastic resins. Among these resins, it is particularly preferable to use a polyimide resin from the viewpoint of heat resistance and mechanical strength. The thickness of the insulating film is not particularly limited, but it has sufficient mechanical strength and flexibility as a film, and a recess is formed, and a semiconductor element or a semiconductor element electrode is dropped into this recess. Therefore, in order to expect a sufficient positioning effect, it is preferable to set in the range of 2 to 500 μm, preferably 10 to 150 μm.

The above-mentioned conductive substance which is a material for forming the electrode portion is not particularly limited as long as it has conductivity, and a conventionally known metal conductive material is used.

Examples of the circuit forming material formed on the other surface of the insulating film include gold, silver, nickel,
Examples of the conductive material include various metals such as cobalt and various alloys containing these as the main components.

Next, the present invention will be described in detail based on examples.

[0015]

EXAMPLE FIG. 1 is a sectional view showing an example of the film with electrodes of the present invention. Reference numeral 1 denotes an insulating film, and a concave portion 2 for accommodating a semiconductor element is formed on one surface of the insulating film 1 in accordance with the size of the semiconductor element to be mounted. A plurality of fine through-holes 3 are formed in the thickness direction of the insulating film 1 in a predetermined region of the bottom surface of the recess 2, and a conductive path 4 is formed by filling the fine through-holes 3 with a conductive substance. ing. The upper and lower ends of the conductive path 4 are formed as bumps 5 so as to project from the upper and lower openings of the fine through hole 3.

The electrode-attached film can be manufactured, for example, as follows. That is, first, a two-layer base material having a conductor layer formed on the back surface of the insulating film 1 is prepared. Then, as shown in FIG. 2, a recess 2 for accommodating a semiconductor element is formed on the surface of the insulating film 1 in accordance with the size of the semiconductor element to be mounted, and then, as shown in FIG.
As shown in FIG. 5, fine through holes 3 are formed in a predetermined area of the bottom surface of the recess 2 in the thickness direction of the film. The fine through holes 3 penetrate only the insulating film 1, and the conductor layer 6 below the fine through holes 3 is exposed from the openings of the fine through holes 3. Next, as shown in FIG. 4, a protective insulating layer 7 is formed on the outer surface of the conductor layer 6, and the conductor layer 6 is subjected to an excavation process from the opening side of the fine through holes 3 to form the conductor layer 6. The recess 8 is formed. Next, as shown in FIG. 5, the conductive passages 4 are formed by filling the fine through holes 3 and the recesses 8 with a conductive substance, and the openings of the fine through holes 3 and the conductive substance are formed in the recesses 8. The bumps 5 are formed. After that, the conductor layer 6 and the protective insulating layer 6 are removed. As a result, a film with an electrode as shown in FIG. 1 can be manufactured.

Conductor layer 6 on the back surface of the insulating film 1
Examples of the method of forming the include a plating method, a sputtering method, a CVD method and the like. Further, there is a method of forming a conductor layer 6 on the back surface of the insulating film 1 by using a conductor foil as the conductor layer 6 and applying an insulator on the conductor foil to solidify.

As the method for forming the recesses 2 and the fine through holes 3, there are mechanical processing, plasma processing, laser processing, lithography using an insulating film 1 having photoreactivity, or insulating film 1 and chemical resistance. Examples of the method include chemical etching using different resists.
Above all, it is preferable to perform half etching or perforation processing by irradiation of an excimer laser whose pulse number and energy amount are controlled.

As the method of forming the conductive paths 4 and the method of forming the bumps 5 in the fine through holes 3, a method of physically embedding a conductive material, a CVD method, a plating method, and a dipping bath of a conductive material are used. Then, a chemical method of depositing a conductive substance by pulling it up can be used. Therefore, in the present invention, the filling of the conductive substance is a broad concept including not only the physical filling of the conductive substance but also the above-mentioned chemical deposition and the like.

The projection height of the bump 5 is not particularly limited, but is lower than the depth of the recess 2 and is several μm so as not to impair the positioning effect of the recess 2 of the insulating film 1.
It is preferable to set in the range of to several tens of μm.

Further, as shown in FIG. 6, the protruding shape of the bump 5 is a so-called rivet tack head shape in which the protruding edge portion extends laterally beyond the opening edge of the fine through hole 3. Good. In this case, the above-mentioned head is used to connect the conduction path 4
It has the effect of preventing falling off.

Further, the conductive path 4 and the bump 5 are
It is not limited to the structure using one kind of conductive material as in the above embodiment. For example, as shown in FIG. 7, a structure using three kinds of conductive materials may be used. That is, an inexpensive metal substance such as copper is used for the central portion 4a of the fine through hole 3, and gold or the like having high connection reliability is used for the surface layer 4c of the bump 5 that is in contact with the semiconductor element electrode and the external substrate electrode. Then, for the intermediate layer 4b located between the central portion 4a and the surface layer 4c, nickel or the like is used as a barrier metal substance for preventing mutual reaction of metal substances. Alternatively, a three-layer structure as shown in FIG. 8 may be used (in this case, the circuit 9 is formed on the back surface of the insulating film 1). That is, a bump-like metal protrusion 5 which is in contact with the external connection electrode of the semiconductor element is formed as the first layer 4d by using an inexpensive metal substance such as copper in a portion of the fine through hole 3 which is in contact with the circuit 9.
The third layer 4f is made of gold or the like having high connection reliability.
Then, for the second layer 4e located between the first layer 4d and the third layer 4f, nickel or the like is used as a barrier metal substance. Further, it is not limited to the structure using the above-mentioned three kinds of conductive substances, and may be formed into a structure using two kinds or four or more kinds of conductive materials.

FIG. 9 shows another embodiment of the film with electrodes of the present invention. In this embodiment, bumps are not formed on both upper and lower ends of the conductive path 4. The other parts are the same as those in the above-mentioned embodiment, and the same parts are denoted by the same reference numerals. This film with electrodes can be reduced in thickness because there is no bump.

FIG. 10 shows still another embodiment of the electrode-attached film of the present invention. In this embodiment, a concave portion 2a is formed on one surface of the insulating film 1, and a concave portion 2b is further formed on the bottom surface of the concave portion 2a, so that the concave portion 2a has a two-step bottom surface. Then, the semiconductor element 10 is accommodated in the upper recess 2a (first step), and the semiconductor element electrode 11 is accommodated in the lower recess 2a (second step). The other parts are the same as those in the embodiment of FIG. 9, and the same parts are denoted by the same numbers. By doing so, the semiconductor element 10 is firmly fixed.

FIG. 11 shows another embodiment of the electrode-attached film of the present invention. In this example, the insulating film 1
A plurality of concave portions 2 are formed on one surface of the concave portion 2, and a pair of two fine through holes 3 are formed on the bottom surface of each concave portion 2.
A convex portion 2c for partitioning the two fine through holes 3 is formed between the fine through holes 3 of each set. By doing so, since the convex portion 2c serves as an insulating wall, a short-circuit preventing effect due to deformation contact of the semiconductor element electrode can be obtained when performing pressure bonding and heat fusion for electrical conduction. In addition, when an adhesive is used for connecting the semiconductor elements, it is possible to obtain an effect that it also serves as a barrier to prevent contamination of the peripheral portion.

FIG. 12 shows still another embodiment of the electrode-attached film of the present invention. In this embodiment, the fine through-holes 3 are formed on the entire bottom surface of the recess 2 formed on one surface of the insulating film 1, and all the fine through-holes 3 are formed in the conductive paths 4, and each of the conductive paths 4 is formed. Bumps 5 are formed on both ends. As a result, conductivity is imparted in the thickness direction to any part of the recess 2 of the film.

FIG. 13 shows another embodiment of the electrode-attached film of the present invention. In this embodiment, a recess 2 for accommodating a semiconductor element is formed on the surface of the insulating film 1 on which the conductor circuit 9 is formed in advance, opposite to the surface on which the circuit 9 is formed, and corresponds to a predetermined position of the circuit 9. Fine through-holes 3 are formed in a predetermined area of the recess 2 in the thickness direction of the film, conductive passages 4 are formed by filling the fine through-holes 3 with a conductive substance, and bumps are formed at the upper end of each conductive passage 4. 5 is formed.

FIG. 14 shows another embodiment of the film with electrodes of the present invention. In this example, the insulating film 1
The recessed portion 2 formed in 1 is formed so as to correspond to each external connection electrode of the semiconductor element. In this case,
As shown in FIG. 5, when performing pressure bonding or heat fusion for electrical conduction, even if the electrode 11 of the semiconductor element 10 and the bump 5 are deformed, it is possible to prevent a short circuit between the adjacent bumps 5, A more reliable electrical connection can be obtained. Also,
When an adhesive is used to connect the semiconductor elements, it is possible to obtain an effect that it also serves as a barrier against contamination of the peripheral portion.

Next, a semiconductor device using the above film with electrodes will be described. 16 is a sectional view showing an embodiment of a semiconductor device using the film with electrodes of FIG.
10 is a semiconductor element having an electrode 11 for external connection,
The two external connection electrodes 11 and the bumps 5 on the upper end side formed on the electrode-attached film are placed in contact with each other and housed in the recess 2 of the electrode-attached film. Reference numeral 12 is an adhesive layer for fixing the semiconductor element. This semiconductor device is electrically connected to the external substrate 14 by bringing the bump 5 on the lower end side into contact with the circuit 13 of the external substrate 14.

As the adhesive used for the adhesive layer 12, a thermoadhesive resin is usually used. Examples of such a heat-adhesive resin include a thermosetting resin such as an epoxy resin and a thermoplastic resin such as a fluororesin.

The connection between the electrode-attached film and the semiconductor element 10 using the above-mentioned heat-adhesive resin is performed, for example, by first forming a heat-adhesive resin layer on the silicon wafer before dicing or by thermally adhering the silicon chip after dicing. A resin layer is formed, and a film with an electrode is adhered and connected thereto. Alternatively, a thermo-adhesive resin layer is formed on the fine pattern formed on the semiconductor element 10 to be bonded and connected, or a film-shaped or ribbon-shaped one is sandwiched when the semiconductor element 10 and the electrode-attached film are connected. You may wear and carry out thermocompression bonding.

When the film with electrodes and the semiconductor element 10 are connected by using the heat-adhesive resin as described above, the heat-adhesive resin layer 12 is formed between the film with electrodes and the semiconductor element 10 as shown in FIG. Since they are formed, the adhesion between them is improved and the electrical connection is strengthened. Further, the surface of the semiconductor device is also protected by the thermoadhesive resin layer 12, and the manufacturing process can be simplified.

The fine through holes 3 may be formed outside the predetermined region of the recess 2. In this case, as shown in FIG. 17, at the time of semiconductor element connection, the fine through holes 3'not filled with the conductive material are provided with an adhesive injection port or an excess adhesive and an internal air exhaust port. Available as

Further, in each of the above embodiments, a plurality of fine through holes 3 are formed, but the present invention is not limited to this, and one fine through hole 3 is formed on the bottom surface of the recess 2.
The conducting path 4 may be formed in the fine through hole 3.

FIG. 18 shows another embodiment of a semiconductor device using the electrode-attached film of the present invention. In this embodiment, the recess 2 for accommodating the semiconductor element includes the recess 2d for accommodating the semiconductor element 10 and the electrode 11 for external connection of the semiconductor element 10.
Has a multi-stage structure with two recesses 2e for accommodating
A convex portion 2f is formed on each of the concave portions 2e. The other parts are substantially the same as those of the embodiment of FIG. 16, and the same parts are denoted by the same numbers.

Next, the film carrier will be described. FIG. 19 is a sectional view showing an embodiment of the film carrier of the present invention. Reference numeral 1 denotes an insulating film, and a concave portion 2 for accommodating a semiconductor element is formed on one surface of the insulating film 1 on which a semiconductor element is mounted according to the size of the semiconductor element to be mounted. A plurality of fine through holes 3 are formed in the recess 2 in the thickness direction of the insulating film 1, and two fine holes 3 are formed in the other surface area of the insulating film 1 corresponding to the area where the fine through holes 3 are formed. Two circuits 9 so as to close the fine through holes 3
Are formed. Then, the metal conduction path 4 is formed only in the fine through hole 3 in which the circuit 9 is formed, and the bump 5 is formed at the tip of the metal conduction path 4 so as to project from the opening on one side of the recess 2 forming surface. ing.

The film carrier of the present invention is produced, for example, as follows. That is, the insulating film 1
As shown in FIG. 20, a recess 2 for accommodating a semiconductor element is formed in accordance with the size of the semiconductor element to be mounted, and then a plurality of fine penetrations are made in the recess 2 in the thickness direction of the insulating film 1. The hole 3 is formed. Next, as shown in FIG. 21, two fine through holes 3 are formed on the surface opposite to the surface where the recesses 2 are formed.
Two circuits 9 are provided so as to block the above. Then, as shown in FIG. 22, a metal conduction path 4 is formed by filling a metal substance into the fine through-hole 3 whose one end is closed by the circuit 9, and then a concave portion is formed by filling the metal substance. Bumps 5 are formed in 2. A film carrier as shown in FIG. 23 is produced by passing through such steps.

In the film carrier thus obtained, a recess 2 for accommodating a semiconductor element is formed in the insulating film 1, and a plurality of fine through holes 3 are formed in the recess 2 in the thickness direction. ing. For this reason, it is easy to position the semiconductor element on the film carrier. In addition, since the semiconductor element is fitted into the recess 2 after mounting,
It can be formed thinner than before. Further, in the fine through hole 3 whose one end is closed by the circuit 9, a metal conducting path 4 is formed by filling a metal substance, and a bump 5 is formed at the tip thereof. .. Therefore, the connection between the semiconductor element and the circuit 9 is also made via the bump 5. Therefore, the positioning of both is performed with high accuracy.

Examples of methods for forming the recesses 2 and the fine through holes 3 include mechanical processing, laser processing, optical processing, and chemical etching. Among them, it is preferable to perform half etching or perforation processing by irradiation of excimer laser.

Further, it is necessary to set the size of the recess 2 to be at least equal to or larger than the outer shape of the semiconductor element to be mounted. Further, when mounting the semiconductor element on the film carrier, considering the size and the positional accuracy in which the external connection electrodes formed on the semiconductor element and the bumps 5 provided on the film carrier are not displaced. Must be set.

Further, the fine through holes 3 are important for forming the metal conduction path 4 for connecting the circuit 9 and the external connection electrode formed in the semiconductor element,
It is necessary to provide at least one through hole 3 with a hole pitch smaller than the width of the circuit 9 and in the thickness direction of the insulating film 1.

The protrusion height of the bump 5 is several μ.
It is preferable to set in the range of m to several tens of μm.

As a method of forming the metal conductive path 4, in addition to a method of simply filling a metal substance, the fine through holes 3 are formed in the metal conductive path 4 by precipitating the solder by immersing it in a solder bath. There is a way to do it.

Next, a semiconductor device using the above film carrier will be described. FIG. 24 shows an example of a semiconductor device using the above film carrier. Reference numeral 10 denotes a semiconductor element having an electrode 11 for external connection, which is for accommodating the semiconductor element so that the two electrodes 11 for external connection and the bumps 5 of the film carrier come into contact with each other so that the semiconductor element 10 and the circuit 9 are electrically connected. The semiconductor element 10 is housed in the recess 2.

A semiconductor device using the above film carrier is obtained, for example, as follows. That is, FIG.
As shown in FIG. 4, the recess 2 formed in the film carrier
The semiconductor element 10 is inserted into the bump 5 and the semiconductor element 1
It is obtained by bringing the external connection electrode 11 of 0 into contact. Then, by connecting both the film carrier and the semiconductor element 10 with an adhesive or by electrical connection or the like, a normally used semiconductor device is obtained.

When an adhesive is used to connect the film carrier and the semiconductor element 10, a thermoadhesive resin is usually used. Examples of such a heat-adhesive resin include a thermosetting resin such as an epoxy resin and a thermoplastic resin such as a fluororesin.

The connection between the film carrier and the semiconductor element 10 using the thermoadhesive resin is performed by, for example, first forming a thermoadhesive resin layer on the silicon wafer before dicing or thermally adhering to the silicon chip after dicing. A resin layer is formed, and a film carrier is adhered and connected thereto. Alternatively, a thermo-adhesive resin layer is formed on the fine pattern formed on the semiconductor element 10 to be bonded and connected, or a film-shaped or ribbon-shaped object is sandwiched when the semiconductor element 10 and the film carrier are connected. Then, it may be thermocompression bonded. Alternatively, after mounting the semiconductor element 10 on the film carrier, a thermo-adhesive resin may be injected and filled through the fine through holes 3 to form a thermo-adhesive resin layer, and the both may be connected.

As described above, when the film carrier and the semiconductor element 10 are connected by using the heat adhesive resin, the heat adhesive resin layer 12 is formed between the film carrier and the semiconductor element 10 as shown in FIG. Further, since the thermo-adhesive resin 12 is filled even in the fine through holes 3, the adhesion between the two is improved, and the electrical connection is strengthened. Further, the surface of the semiconductor device is also protected by the resin layer 12,
The manufacturing process can also be simplified. Further, after the film carrier and the semiconductor element 10 are connected, as shown in FIG. 25, excess heat-adhesive resin flows into the fine through holes 3 in which the metal conduction paths 5 are not formed, and the internal air is removed. Since the resin is extruded, voids or cracks are not generated when the semiconductor device of the present invention is resin-sealed in a later step, and reliability is high. In addition, it is possible to simultaneously perform the sealing resin together with the connection of both, which simplifies the manufacturing process,
Moreover, since a strong connection is made, the reliability is improved.

[0049]

INDUSTRIAL APPLICABILITY As described above, the electrode-attached film and the film carrier of the present invention have one side of the insulating film,
A recess for accommodating a semiconductor element or for accommodating a semiconductor element electrode is formed, and an electrode portion for electrically connecting in the thickness direction is formed on the bottom surface of this recess. Therefore, when the semiconductor element is mounted, the semiconductor element or the semiconductor element electrode can be positioned by dropping into the recess, which facilitates the positioning. Further, the semiconductor device having the semiconductor element housed in the recess is thinner than the conventional one. In particular, when the electrode-equipped film and the electrodes of the film carrier are formed on the bumps, the dropping ensures the conduction, and the connection reliability increases. And by making the fine through-holes finer, it is possible to correspond to the fine pitch of the semiconductor element wiring,
Further, the electrode portion of the semiconductor element can be freely laid out within the element plane. Therefore, the degree of freedom in the wiring design of the semiconductor element is improved.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of the electrode-attached film of the present invention.

FIG. 2 is a cross-sectional view showing a manufacturing process of the electrode-attached film.

FIG. 3 is a cross-sectional view showing a manufacturing process of the electrode-attached film.

FIG. 4 is a cross-sectional view showing a manufacturing process of the electrode-attached film.

FIG. 5 is a cross-sectional view showing a manufacturing process of the electrode-attached film.

FIG. 6 is a partial cross-sectional view showing a modified example of a bump provided on the electrode-attached film.

FIG. 7 is a partial cross-sectional view showing another modification of the bump.

FIG. 8 is a partial cross-sectional view showing still another modified example of the bump.

FIG. 9 is a cross-sectional view showing another embodiment of the electrode-attached film.

FIG. 10 is a sectional view showing still another embodiment of the electrode-attached film.

FIG. 11 is a cross-sectional view showing another embodiment of the electrode-attached film.

FIG. 12 is a cross-sectional view showing another embodiment of the electrode-attached film.

FIG. 13 is a cross-sectional view showing another example of the electrode-attached film.

FIG. 14 is a cross-sectional view showing another embodiment of the electrode-attached film.

FIG. 15 is an explanatory diagram showing a heat-sealed state of semiconductor element electrodes.

FIG. 16 is a cross-sectional view showing an example of a semiconductor device using the electrode-attached film of the present invention.

FIG. 17 is a sectional view showing a semiconductor device in which a fine through hole is formed outside a predetermined region of a recess.

FIG. 18 is a cross-sectional view showing another embodiment of a semiconductor device using the electrode-attached film of the present invention.

FIG. 19 is a cross-sectional view showing an example of the film carrier of the present invention.

FIG. 20 is a cross-sectional view showing a manufacturing process of the film carrier.

FIG. 21 is a cross-sectional view showing the manufacturing process of the film carrier.

FIG. 22 is a cross-sectional view showing the manufacturing process of the film carrier.

FIG. 23 is an explanatory view of a main part showing an example of the film carrier.

FIG. 24 is a cross-sectional view showing one embodiment of a semiconductor device using the film carrier of the present invention.

FIG. 25 is a cross-sectional view of the case where a thermoadhesive resin is used for connecting the semiconductor device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating film 2 Recess 3 Micro through hole 4 Conduction path 5 Bump 9 Circuit 10 Semiconductor element

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[Procedure amendment]

[Submission date] April 14, 1992

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Correction target item name] All drawings

[Correction method] Change

[Correction content]

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 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Atsushi Hino 1-2-2 Shimohozumi, Ibaraki City, Osaka Prefecture Nitto Denko Corporation (72) Instructor Naoji Morita 1-2-1, Shimohozumi, Ibaraki City, Osaka Prefecture Nitto Denko Corporation (72) Inventor Yoshiya Takayama 1-2-1, Shimohozumi, Ibaraki City, Osaka Prefecture Nitto Denko Corporation

Claims (9)

[Claims] 1. An insulating film is provided with a concave portion having a flat bottom surface or a multi-stepped surface on one surface, and a predetermined number of fine through holes are formed in the thickness direction on the bottom surface of the concave portion. A film with an electrode, characterized in that a hole is filled with a conductive substance and is formed in an electrode portion. 2. The film with an electrode according to claim 1, wherein the bottom surface of the recess has a two-step shape, the first step is used for mounting a semiconductor element, and the second step is used for forming a fine through hole. .. 3. The electrode-attached film according to claim 1, wherein a convex portion for partitioning the fine through holes is formed between one fine through hole and another fine through hole. 4. The electrode-attached film according to claim 1, wherein the end portion of the conductive material is formed in a bump shape so as to protrude from at least one of the openings of the fine through holes. 5. A recess is formed on one surface of the insulating film, and a plurality of fine through holes are formed in the bottom surface of the recess in the thickness direction, and a portion of the other surface of the insulating film corresponding to the bottom surface of the recess is formed. A circuit is formed by a conductor, and a conductive material conductive path is formed only in the fine through hole in the portion where the circuit is formed, and the tip of the conductive path is projected from at least one of the openings of the fine through hole to form a bump-shaped electrode portion. A film carrier characterized by being formed on. 6. The concave portion formed on one surface of the insulating film is a concave portion having a two-step bottom surface, the first step of the bottom surface is used for mounting a semiconductor element, and the second step is used for forming a fine through hole. The film carrier according to claim 5, which is used. 7. The film carrier according to claim 5, wherein a projection for partitioning the two fine through holes is formed between one fine through hole and another fine through hole. 8. A semiconductor element is housed in the recess of the electrode-attached film according to claim 1, and the electrode portion of the semiconductor element is electrically connected to the electrode portion of the electrode-attached film. A semiconductor device characterized by being provided. 9. A semiconductor element is housed in the recess of the film carrier according to claim 5, and the electrode portion of the semiconductor element is electrically connected to the bump-shaped electrode portion of the film carrier. A semiconductor device characterized in that