JP2000003055A - Electrophotographic device - Google Patents
Electrophotographic deviceInfo
- Publication number
- JP2000003055A JP2000003055A JP16534598A JP16534598A JP2000003055A JP 2000003055 A JP2000003055 A JP 2000003055A JP 16534598 A JP16534598 A JP 16534598A JP 16534598 A JP16534598 A JP 16534598A JP 2000003055 A JP2000003055 A JP 2000003055A
- Authority
- JP
- Japan
- Prior art keywords
- receiving member
- light receiving
- surface layer
- electrophotographic apparatus
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、クリーニングブレ
ードによるスクレープクリーニングを行う電子写真装置
に関し、さらに詳しくは、クリーニングローラー等の光
受容部材表面の摺擦手段を設けずとも、光受容部材の表
面がムラ削れすることなく均一に削れ、かつ光受容部材
の加温手段を設けずとも如何なる環境下においても画像
ボケ、画像流れが発生することなく長期間の使用におい
ても高品質な画像を提供することが可能な光受容部材を
用いた電子写真装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrophotographic apparatus for performing scrape cleaning with a cleaning blade, and more particularly, to an electrophotographic apparatus in which the surface of a light receiving member is provided without a means for rubbing the surface of the light receiving member such as a cleaning roller. To provide a high-quality image that can be uniformly cut without uneven shaving and that can be used for a long period of time without image blurring or image deletion under any environment without providing a heating means for the light receiving member. The present invention relates to an electrophotographic apparatus using a light-receiving member capable of performing the following.
【0002】[0002]
【従来の技術】従来、電子写真法としては、米国特許第
2297692号明細書、特公昭42−23910号公
報及び特公昭43−24748号公報に記載されている
ごとく、多数の方法が知られている。一般には光受容部
材を利用し、種々の手段により光受容部材上に電気的潜
像を形成し、次いで該潜像を現像剤を用いて現像し、必
要に応じて紙等の転写材に現像剤画像を電気的に転写し
た後に、加熱、加圧、加熱加圧あるいは、溶剤蒸気等に
より定着し複写物を得るものである。2. Description of the Related Art A large number of electrophotographic methods have been known as described in U.S. Pat. No. 2,297,692, Japanese Patent Publication No. 42-23910 and Japanese Patent Publication No. 43-24748. I have. Generally, a light-receiving member is used to form an electric latent image on the light-receiving member by various means, and then the latent image is developed using a developer and, if necessary, developed on a transfer material such as paper. After electrically transferring the developer image, the image is fixed by heating, pressurizing, heating and pressurizing, or solvent vapor to obtain a copy.
【0003】上記工程において、転写材へ現像剤画像を
転写した後でも光受容部材表面には残留現像剤が残るた
め、これを除去する手段としてクリーニングブレードを
当接し、該未転写現像剤を系外に排出していた。In the above process, a residual developer remains on the surface of the light receiving member even after the transfer of the developer image to the transfer material. Therefore, as a means for removing the residual developer, a cleaning blade is brought into contact with the developer to remove the untransferred developer. Had been discharged outside.
【0004】電子写真感光体に用いる光受容部材の素材
としては、セレン、硫化カドミニウム、酸化亜鉛、アモ
ルファスシリコン(以下、a−Siと記す)等の無機材
料、あるいは有機材料等、各種の材料が提案されてい
る。これらのうちでもa−Siに代表される珪素原子を
主成分として含む非単結晶質堆積膜、例えば水素及び/
またはハロゲン(例えばフッ素、塩素等)を含む(例え
ば水素またはダングリングボンドを補償する)a−Si
等のアモルファス堆積膜は高性能、高耐久、無公害な感
光体として提案され、そのいくつかは実用化されてい
る。特開昭54−86341号公報、USP4,26
5,991号には、光導電層を主としてa−Siで形成
した電子写真感光体の技術が開示されている。また特開
昭60−12554号公報には珪素原子を含有する非晶
質シリコンからなる光導電層の表面に炭素及びハロゲン
原子を含む表面層が開示されており、さらに特開平2−
111962号公報には、a−Si:Hまたは、a−
C:H感光層上に表面保護潤滑層を設けた感光体が開示
されているが、何れも撥水性や耐摩耗性を向上させる技
術であり、電子写真プロセスと表面層の削れ性との関係
に関する記載はない。Various materials such as inorganic materials such as selenium, cadmium sulfide, zinc oxide, amorphous silicon (hereinafter referred to as a-Si), and organic materials can be used as a material of a light receiving member used for an electrophotographic photosensitive member. Proposed. Among these, non-single-crystal deposited films containing silicon atoms typified by a-Si as main components, for example, hydrogen and / or
Or a-Si containing halogen (eg, fluorine, chlorine, etc.) (eg, to compensate for hydrogen or dangling bonds)
Are proposed as high-performance, high-durability, and non-polluting photoconductors, and some of them have been put to practical use. JP-A-54-86341, USP 4,26
No. 5,991 discloses a technique of an electrophotographic photosensitive member in which a photoconductive layer is mainly formed of a-Si. JP-A-60-12554 discloses a surface layer containing carbon and halogen atoms on the surface of a photoconductive layer made of amorphous silicon containing silicon atoms.
No. 111962 discloses that a-Si: H or a-Si: H
C: H Photoreceptors having a surface protective lubricating layer provided on a photosensitive layer are disclosed, but all of these are techniques for improving water repellency and abrasion resistance, and the relationship between the electrophotographic process and the shaving property of the surface layer. There is no statement about.
【0005】a−Siに代表されるa−Si系感光体
は、半導体レーザー(770nm〜800nm)等の長
波長光に高い感度を示し、しかも繰り返し使用による劣
化もほとんど認められない等の優れた点を有するので、
例えば高速複写機やLBP(レーザービームプリンタ
ー)等の電子写真用感光体として広く使用されている。An a-Si type photoreceptor represented by a-Si exhibits excellent sensitivity to long wavelength light such as a semiconductor laser (770 nm to 800 nm) and has little deterioration due to repeated use. Because it has a point,
For example, it is widely used as a photoconductor for electrophotography such as a high-speed copying machine and an LBP (laser beam printer).
【0006】シリコン系非単結晶堆積膜の形成法として
は、スパッタリング法、熱により原料ガスを分解する方
法(熱CVD法)、光により原料ガスを分解する方法
(光CVD法)、プラズマにより原料ガスを分解する方
法(プラズマCVD法)等、多数の方法が知られてい
る。中でもプラズマCVD法、すなわち原料ガスを直流
または高周波、(RF、VHF)または、マイクロ波を
利用して発生させたグロー放電等によって分解し、ガラ
ス、石英、耐熱性合成樹脂フィルム、ステンレス、アル
ミニウム等の所望の基体上に堆積膜を形成する方法は、
電子写真用アモルファスシリコン堆積膜の形成方法等に
とどまらず、他の用途の堆積膜の形成方法を含め、現在
実用化が非常に進んでおり、そのための装置も各種提案
されている。As a method of forming a silicon-based non-single-crystal deposited film, there are a sputtering method, a method of decomposing a source gas by heat (thermal CVD method), a method of decomposing a source gas by light (photo CVD method), and a method of decomposing a source gas by plasma. Many methods are known, such as a method of decomposing gas (plasma CVD method). Among them, the plasma CVD method, that is, the raw material gas is decomposed by direct current or high frequency, (RF, VHF) or glow discharge generated by using microwaves, glass, quartz, heat-resistant synthetic resin film, stainless steel, aluminum, etc. The method of forming a deposited film on a desired substrate of
Not only the method of forming an amorphous silicon deposited film for electrophotography, but also the method of forming a deposited film for other uses has been very much in practical use, and various apparatuses for this purpose have been proposed.
【0007】さらに、電子写真用光受容部材への適用を
鑑みても近年では膜質及び処理能力の向上に対する要望
が強くなっており様々な工夫も検討されている。Further, in view of application to a light receiving member for electrophotography, in recent years, there has been a strong demand for improvement in film quality and processing ability, and various devices have been studied.
【0008】特に高周波電力を用いたプラズマプロセス
は、放電の安定性が高く酸化膜や窒化膜等の絶縁性材料
の形成にも使用できる等様々な利点により使用されてい
る。In particular, a plasma process using high-frequency power is used because of its various advantages, such as high discharge stability and its use in forming an insulating material such as an oxide film or a nitride film.
【0009】光受容部材としては、高速に対応した電子
写真特性の向上が要求されると共に、より精彩な画質を
要求される昨今においては、光受容部材特性の改善はも
とより、現像剤の小粒径化が進められ、コールターカウ
ンター等による重量平均粒径が5〜8μmであるものが
多く使われている。As the light receiving member is required to be improved in electrophotographic characteristics corresponding to high speed and to be required to have more vivid image quality, in recent years, not only the characteristics of the light receiving member but also the small particles of developer have been improved. The diameter has been advanced, and those having a weight average particle diameter of 5 to 8 μm by a Coulter counter or the like are often used.
【0010】[0010]
【発明が解決しようとする課題】a−Si系光受容部材
は、表面硬度が他の感光体に比べて極めて高いため、ク
リーニング手段としてクリーニング能力の高い、ブレー
ド式クリーニング方式が広く用いられている。Since the surface hardness of the a-Si light receiving member is extremely higher than that of other photosensitive members, a blade type cleaning system having a high cleaning ability as a cleaning means is widely used. .
【0011】しかし、このようなブレード式クリーニン
グ方式においては、a−Si系光受容部材表面の突起部
により、長期間の複写工程の繰り返しによりブレードの
エッジ面が破損し、画像上に黒スジ状のクリーニング不
良が発生する場合があった。However, in such a blade-type cleaning system, the edge surface of the blade is damaged due to the repetition of the copying process for a long period of time due to the projections on the surface of the a-Si light receiving member, and black streaks are formed on the image. Cleaning failure sometimes occurred.
【0012】上記a−Si系光受容部材の表面に発生す
る突起物の原因を観察した結果、ブレード破損部に対応
する光受容部材表面に、円形の形状をした突起(以後、
球状突起と記す)が認められた。この球状突起部の堆積
膜を基体ごと切り取り断面を顕微鏡で観察したところ基
体近傍、あるいは堆積膜の途中に、数μm〜数十μmの
大きさの異物があり、この異物を核として表面に向かい
柱状または、逆円錐状の異常成長が始まっていることが
判明した。この球状突起の凸部の高さは球状突起の核と
なる異物の大きさによって異なるが一般的には1〜30
μmである。As a result of observing the cause of the protrusions generated on the surface of the a-Si light receiving member, circular protrusions (hereinafter referred to as “protrusions”) were formed on the surface of the light receiving member corresponding to the broken portions of the blade.
Spherical protrusions) were observed. When the deposited film of the spherical projections was cut together with the substrate and the cross section was observed with a microscope, there was a foreign substance having a size of several μm to several tens μm near the substrate or in the middle of the deposited film, and the foreign substance was directed toward the surface with the nucleus as a nucleus. It was found that columnar or inverted cone-shaped abnormal growth had begun. The height of the convex portion of the spherical projection varies depending on the size of the foreign matter serving as the nucleus of the spherical projection.
μm.
【0013】この球状突起の表面を高硬度な膜で覆うこ
とによりブレードクリーニングを行った場合、表面が硬
いことによって、突起部分が割れ欠落して凹みが発生す
る場合があった。When blade cleaning is performed by covering the surface of the spherical projections with a film having high hardness, the projections are sometimes cracked and dent due to the hard surface.
【0014】従来、球状突起の頭部のみを研磨するた
め、10〜20μmの結晶炭化珪素粉をコーティングし
た研磨テープを圧接ローラーにより光受容部材表面に圧
接し球状突起頭部の高さが約5μm程度になるまで研磨
を行っていた。Conventionally, in order to polish only the head of the spherical projection, a polishing tape coated with 10 to 20 μm crystalline silicon carbide powder was pressed against the surface of the light receiving member by a pressing roller, and the height of the spherical projection head was about 5 μm. Polishing was performed until it was about the extent.
【0015】しかし、球状突起の頭部は脆く欠落する場
合がある。球状突起の頭部が欠落した場合、欠落した球
状突起の破片で光受容部材表面を傷付けてしまう場合が
ある。光受容部材表面が傷付くと、傷付いた部分は電荷
が保持できずに画像上、白スジ状の画像欠陥として現れ
る場合がある。However, the head of the spherical projection may be brittle and may be missing. When the head of the spherical projection is missing, a piece of the missing spherical projection may damage the light receiving member surface. If the surface of the light receiving member is damaged, the damaged portion may not be able to hold the electric charge and may appear as a white streak-like image defect on the image.
【0016】前述、研磨手段を用いて球状突起の頭部の
みを研磨するためには、時間及びコスト的に効率的では
ない。そこで上記の研磨手段により球状突起の頭部を研
磨する工程を行わずに、電子写真層に用いても長期にわ
たって、高品質な画像が提供可能な光受容部材を用いた
電子写真装置が求められていた。In order to polish only the head of the spherical projection using the polishing means, it is not efficient in terms of time and cost. Therefore, an electrophotographic apparatus using a light-receiving member capable of providing a high-quality image for a long period of time even when used for an electrophotographic layer without performing the step of polishing the head of the spherical projection by the above-described polishing means is required. I was
【0017】このような状態で複写工程を繰り返し行う
と、コロナ帯電器内で残留現像剤や該残留現像剤に含ま
れる外添剤(チタン酸ストロンチウム、シリカ等)の微
粒子が飛散してコロナ帯電器のワイヤー電極(以後、帯
電器ワイヤーと記す)に付着し、放電ムラの原因となる
場合がある。帯電器ワイヤー汚れによって放電ムラが発
生すると、正現像(光受容部材表面の非露光部を現像す
る方式)においては画像上にスジ状の白抜け部、画像全
面に広がるウロコ状の黒モヤ、周期性なく局部的に発生
する黒点(0.1〜0.3mmφ)等が発生して出力画
像の品質が低下する場合がある。If the copying process is repeated in such a state, the residual developer and the fine particles of the external additives (strontium titanate, silica, etc.) contained in the residual developer are scattered in the corona charger to cause corona charging. It may adhere to the wire electrode of the charger (hereinafter, referred to as a charger wire) and cause uneven discharge. If discharge unevenness occurs due to contamination of the charger wire, in normal development (a method of developing a non-exposed portion on the surface of the light receiving member), a streak-like white spot on an image, a scale-like black haze spreading over the entire image, and a period. In some cases, black spots (0.1 to 0.3 mmφ) or the like which are locally generated without causing the image quality may be reduced.
【0018】また、帯電器ワイヤー汚れが発生すると、
その汚れ部と光受容部材間で異常放電が誘発され、光受
容部材表面を破壊して画像欠陥を発生させる場合があ
る。Also, when the charger wire becomes dirty,
An abnormal discharge is induced between the contaminated portion and the light receiving member, which may destroy the surface of the light receiving member and cause image defects.
【0019】さらに、ブレード式クリーニング方式は原
稿チャートの文字パターンの差によりブレード面に滞留
する現像剤の量に差が生じ受容部材表面層に削れムラが
生ずる場合がある。このような削れムラが発生した場
合、電子写真特性として感度ムラとなり画像に濃度ムラ
として発生する。Further, in the blade-type cleaning method, the amount of the developer remaining on the blade surface may vary due to the difference in the character pattern of the document chart, and the surface layer of the receiving member may be shaved and uneven. When such shaving unevenness occurs, the sensitivity becomes uneven as an electrophotographic characteristic, and the unevenness occurs in the image.
【0020】特に、この現像は現像剤の粒径が小さいほ
ど顕著である。In particular, this development is more remarkable as the particle size of the developer is smaller.
【0021】しかし、近年では画像特性の高画質化が要
求されているのが現状であり、このような状況下におい
て現像剤の小粒径化が進んでいる。この現像剤の小粒径
化は画質面では向上する反面、摺擦力が高くなる傾向が
あり、この摺擦力のアップにより、クリーニングブレー
ドのビビリ等による残留現像剤(トナー)のすり抜けが
生じ、黒スジ状のクリーニング不良が発生する場合があ
る。However, in recent years, there has been a demand for higher image quality of image characteristics, and under such circumstances, the particle size of the developer has been reduced. The reduction in the particle size of the developer improves the image quality, but tends to increase the rubbing force. The increase in the rubbing force causes slippage of the residual developer (toner) due to chattering of the cleaning blade. In some cases, black streak-like cleaning failure may occur.
【0022】さらに、摩擦抵抗が高いと光受容部材とク
リーニングブレード間で摩擦熱が上昇し、熱定着に用い
られる残留現像剤は、この摩擦熱によって光受容部材の
表面に強固に付着する融着現象が発生する場合がある。
特にこの融着現象は、現像剤の小粒径化に比例して顕著
であり初期の段階では画像には影響しない程度の微小な
ものであるが、繰り返しの使用で微小な融着が核となり
徐々に成長し画像に黒スジ状の画像欠陥となる。Further, when the frictional resistance is high, the frictional heat increases between the light receiving member and the cleaning blade, and the residual developer used for heat fixing adheres firmly to the surface of the light receiving member due to the frictional heat. Symptoms may occur.
In particular, this fusion phenomenon is remarkable in proportion to the decrease in the particle size of the developer, and is small enough not to affect the image in the initial stage. The image gradually grows and becomes an image defect in the form of a black stripe on the image.
【0023】このような状況の解決方法として、クリー
ニングブレードの押し付け圧力を高くする方法や、光受
容部材表面に付着した現像剤を削り取る力を向上させる
ため、弾性ゴムブレードの硬度を高める等の対策が必要
であるが、ブレードの硬度を高めることは、ブレードの
特性としては、ゴム的状態からガラス状態に近付くた
め、材質としては脆くなりブレードの寿命を短くする方
向であり、これらの方法は光受容部材表面との摩擦力が
上昇する方向であるため、表面層のムラ削れが悪化する
可能性が高い。As a solution to such a situation, there are a method of increasing the pressing pressure of the cleaning blade, a measure of increasing the hardness of the elastic rubber blade in order to improve a force for scraping the developer adhered to the surface of the light receiving member, and the like. However, increasing the hardness of the blade is a characteristic of the blade that changes from a rubbery state to a glassy state, so that the material becomes brittle and the life of the blade is shortened. Since the frictional force with the surface of the receiving member is in the upward direction, there is a high possibility that uneven shaving of the surface layer is deteriorated.
【0024】このようなムラ削れの対策として従来、マ
グネットローラーあるいはウレタンゴムや、シリコンゴ
ム等のクリーニングローラーを設けクリーニングブレー
ドに達する現像剤を均一に分散し、ブレード面の現像剤
の滞留ムラを緩和する手段を設けることが必須であっ
た。As a countermeasure against such unevenness scraping, conventionally, a magnet roller or a cleaning roller made of urethane rubber, silicon rubber or the like is provided to uniformly disperse the developer reaching the cleaning blade, thereby alleviating the unevenness of the developer remaining on the blade surface. It was essential to provide a means for doing so.
【0025】コロナ放電生成物は吸湿性が強く、その吸
着を生じた光受容部材表面は付着コロナ放電生成物の吸
湿による光受容部材表面の低抵抗化で実質的に電荷保持
能力をが全面的にあるいは、部分的に低下して、画像流
れ(光受容部材表面電荷が面方向にリークして静電荷潜
像パターンが崩れるあるいは形成されない)と称される
画像欠陥を生ずる原因となる。The corona discharge product has a strong hygroscopic property, and the surface of the light receiving member that has caused the adsorption has a substantially full charge holding ability due to the low resistance of the light receiving member surface due to the moisture absorption of the attached corona discharge product. Or a partial decrease, causing an image defect called image deletion (the surface charge of the photoreceptor leaks in the surface direction and the electrostatic latent image pattern is broken or not formed).
【0026】この画像流れ現象を防止する対策として前
述、クリーニングローラー等の摺擦手段と併用して、光
受容部材を加温するためのヒーターを設けたり温風送風
装置により温風を光受容部材に送風する等の手段を設
け、光受容部材表面を約30℃〜50℃に加温する手段
を設けていた。この加温手段により相対湿度を低下させ
光受容部材表面に付着しているコロナ放電生成物やコロ
ナ放電生成物が吸着した水分を揮発させることによって
光受容部材表面の実質的な低抵抗化を抑えることが電子
写真装置設計において必須条件であった。As a countermeasure for preventing this image deletion phenomenon, a heater for heating the light receiving member is provided in combination with the rubbing means such as the cleaning roller, or the warm air is blown by the warm air blowing device. And a means for heating the surface of the light receiving member to about 30 ° C. to 50 ° C. This heating means lowers the relative humidity and volatilizes the corona discharge products adhering to the surface of the light receiving member and the water adsorbed by the corona discharge products, thereby suppressing a substantial reduction in the resistance of the surface of the light receiving member. This was an essential condition in the design of electrophotographic devices.
【0027】また、コロナ帯電器のシールド板内面に付
着したコロナ放電生成物は電子写真装置の稼働中のみな
らず夜間等の装置の休止中にも揮発遊離し、それが該帯
電器の放電開口に対応した光受容部材表面に付着する。
このコロナ放電生成物が吸湿し光受容部材表面を低抵抗
化させるために、電子写真装置の長期休止後の最稼動時
に出力される一枚目あるいは数枚のコピーに上記の装置
休止中の帯電器開口部領域に対応する光受容部材表面に
帯電器跡流れと称される画像流れが生じ易い。したがっ
て加温手段は夜間、複写工程の休止中といえどもoff
することができなかった。Further, the corona discharge products adhering to the inner surface of the shield plate of the corona charger are volatilized and released not only during the operation of the electrophotographic apparatus but also during the stoppage of the apparatus at night or the like. Adhere to the surface of the light receiving member corresponding to.
This corona discharge product absorbs moisture and lowers the resistance of the surface of the light receiving member. The image flow referred to as the trace of the charger tends to occur on the surface of the light receiving member corresponding to the opening area of the charger. Therefore, the heating means is turned off even at night, even when the copying process is stopped.
I couldn't.
【0028】この加温手段の問題点として、電子写真装
置の小型化及び低コスト化に伴い光受容部材の小径化及
び光受容部材の導電性基体の薄肉化を行った場合、回転
円筒状現像剤担持体の回転周期で部分的に画像濃度に濃
い部分と薄い部分の画像濃度ムラが発生する場合があ
る。この原因は装置の休止中に該光受容部材の熱によ
り、該回転円筒状現像剤担持体が膨張し該光受容部材対
向部との距離が短くなり、現像剤が通常よりも転移し易
くなるためである。The problem of this heating means is that when the diameter of the light receiving member is reduced and the thickness of the conductive base of the light receiving member is reduced in accordance with the reduction in size and cost of the electrophotographic apparatus, the rotating cylindrical developing device is required. In some cases, the image density unevenness occurs in a portion where the image density is high and a portion where the image density is low in the rotation cycle of the agent carrier. This is because the rotating cylindrical developer carrier expands due to the heat of the light receiving member while the apparatus is at rest, and the distance between the rotating cylindrical developer carrier and the light receiving member facing portion is shortened, so that the developer is more easily transferred than usual. That's why.
【0029】近年、複写機やプリンターのパーソナルユ
ース化に伴い小型化・低コスト・メンテナンスフリーが
重要な課題である。In recent years, miniaturization, low cost, and maintenance-free are important issues with the personal use of copiers and printers.
【0030】前述、クリーニングローラー及び、光受容
部材の加温手段を設けることは電子写真装置の小型化・
低コスト化、メンテナンスフリーに対して非常に困難な
状況であり、電子写真装置の設計段階において克服すべ
き重要な課題である。また、省エネルギー、エコロジー
といった観点からも、光受容部材を直接加温する手段を
設けない設計が望ましい。The provision of the cleaning roller and the heating means for the light-receiving member described above can reduce the size of the electrophotographic apparatus.
This is a very difficult situation for cost reduction and maintenance-free, and is an important issue to be overcome in the design stage of an electrophotographic apparatus. Further, from the viewpoints of energy saving and ecology, it is desirable that the light receiving member be designed without a means for directly heating the light receiving member.
【0031】また、画像流れの問題に加え、近年の複写
画像に対する要求の高まりから、高画質を安定して供給
する技術が切望されている。複写機の用途が文字中心の
複写原稿から写真等の画像に移り、市場のニーズとして
ハーフトーンを多用する複写原稿が増えてきたため、濃
度の安定性に関して、以前にまして厳しい基準が要求さ
れるようになってきた。Further, in addition to the problem of image deletion, the demand for copied images has been increasing in recent years, and there is an urgent need for a technique for stably supplying high image quality. As the use of copiers has shifted from text-based copy originals to images such as photographs, and the need for half-tone copy originals has increased as market needs, strict standards for density stability will be required more than before. It has become
【0032】このような状況下において、加温手段を設
けずに画像流れが発生しない光受容部材及び、如何なる
電子写真プロセス条件においても、ムラ削れが発生せず
濃度ムラのない高画質を安定して供給することが可能な
電子写真装置が求められている。Under such circumstances, a light receiving member which does not cause image deletion without providing a heating means, and a high image quality free from uneven shavings and density unevenness under any electrophotographic process conditions can be stably provided. There is a need for an electrophotographic device that can be supplied in a vacuum.
【0033】本発明は、上記問題点を解決するためにな
されてものであり、その目的とするところは、光受容部
材表面に1〜50μmの高さの球状突起が存在しても、
ブレードエッジ部分の破損を抑えることを目的とする。
さらにクリンーニング不良によって発生するトナーの飛
散、リークポチを防止することにある。The present invention has been made in order to solve the above problems, and an object of the present invention is to provide a light receiving member having a spherical projection having a height of 1 to 50 μm on its surface.
The purpose is to suppress damage to the blade edge portion.
Another object of the present invention is to prevent scattering of toner and leak spots caused by poor cleaning.
【0034】また、もう一つの目的としては、小粒径の
現像剤で現像を行いかつ、クリーニングローラー等の摺
擦手段を設けないクリーニング方法を用いた電子写真プ
ロセスにおいても本発明の光受容部材を用いることによ
って、現像剤の飛散を防止し帯電器ワイヤー汚れやクリ
ーニング不良、融着が発生しない電子写真装置を提供す
ることにある。さらには、光受容部材の加温手段や、光
受容部材の表面摺擦手段を設けずとも高湿環境下での画
像流れといった画像欠陥が発生しない電子写真装置を提
供することにより電子写真装置設計のラチチュードを大
幅に広げることにある。Another object of the present invention is to provide a light-receiving member of the present invention in an electrophotographic process using a cleaning method in which development is performed with a developer having a small particle size and no rubbing means such as a cleaning roller is provided. An object of the present invention is to provide an electrophotographic apparatus in which the developer is prevented from being scattered, and the wire of the charger is not stained, the cleaning is poor, and the fusion is not generated. Further, by providing an electrophotographic apparatus which does not cause image defects such as image deletion in a high humidity environment without providing a means for heating the light receiving member and a means for rubbing the surface of the light receiving member, the design of the electrophotographic apparatus is provided. Is to greatly expand the latitude of
【0035】[0035]
【課題を解決するための手段】本発明者らは、電子写真
プロセスと光受容部材の表面層の摩耗量との関係に着目
し、ムラ削れに厳しい電子写真プロセスにおける光受容
部材表面の摩耗性を向上させることを試みた。その結
果、本発明の電子写真プロセス及び本発明のa−Si
C:H膜を光受容部材の表面層に用いた光受容部材の組
み合わせにより、ブレードによって、光受容部材の表面
層が削られる場合、球状突起の凸部は、平滑な正常部よ
りも圧接圧が高くなり、選択的に削られるため、球状突
起部の表面層が削られ、直ちに光導電層に達する。光導
電層の削れ量は、一般的に1μm/1万枚であり、ブレ
ードに対するダメージが軽減され、ブレードの破損によ
るクリーニング不良の発生を減少させることが可能であ
ることを見出した。The present inventors have paid attention to the relationship between the electrophotographic process and the amount of wear of the surface layer of the light receiving member, and have studied the abrasion of the surface of the light receiving member in the electrophotographic process, which is severe in uneven shaving. Tried to improve. As a result, the electrophotographic process of the present invention and the a-Si
C: When the surface layer of the light-receiving member is shaved by the blade by the combination of the light-receiving member using the H film as the surface layer of the light-receiving member, the convex portion of the spherical projection has a higher pressure than the smooth normal portion. And the surface layer of the spherical protrusion is shaved and reaches the photoconductive layer immediately. The shaving amount of the photoconductive layer is generally 1 μm / 10,000 sheets, and it has been found that damage to the blade can be reduced, and occurrence of cleaning failure due to damage to the blade can be reduced.
【0036】さらに、ムラ削れに厳しい電子写真装置構
成でもムラ削れせず、クリーニング不良や、融着が発生
しない。また、如何なる環境条件においても光受容部材
の加温手段を設けずとも画像流れが発生しないことを見
出した。Further, even in an electrophotographic apparatus which is strictly resistant to uneven shaving, uneven shaving does not occur, and cleaning failure and fusion do not occur. In addition, it has been found that image deletion does not occur under any environmental conditions without providing a heating means for the light receiving member.
【0037】本発明は、光受容部材に対して、帯電、露
光、現像、転写、クリーニングを順次繰り返す電子写真
装置において、平均粒径5〜8μmの現像剤を該光受容
部材に現像、転写材へ転写し、現像剤が転写された後の
光受容部材表面を反発弾性10%以上50%以下の弾性
ゴムブレートでスクレープクリーニングする電子写真装
置でA4版の複写工程を転写紙に行った後の摩耗量が1
オングストローム/1万枚以上100オングストローム
/1万枚以下である、非単結晶質炭素化珪素膜で表面層
を構成した光受容部材を用いることを特徴とする電子写
真装置を提案するものであり、 前記、帯電、露光、現
像、転写、クリーニングを順次繰り返す電子写真装置に
おいて、クリーニングローラーによる摺擦クリーニング
手段を設けずかつ、光受容部材を直接加温する手段を設
けない構成であること、前記光受容部材が導電性基体上
にシリコン原子を母体とする非単結晶材料で構成された
光導電層及び非単結晶材料で構成された表面層からなる
光受容部材であること、前記、表面層のダイナミック硬
度が100〜950であること、前記、非単結晶質炭化
珪素膜の炭素量(C/Si+C)が5%〜90%である
こと、前記表面層が、少なくともシラン系及び、炭化水
素系のガスを1〜450MHzの高周波を用いたプラズ
マCVD法によって分解することによって堆積成膜する
こと、前記、光受容部材が、電荷注入阻止層、光導電
層、表面層の3層で構成されていること、前記、光受容
部材が、電荷輸送層、電荷発生層、表面層の3層で構成
されていることを含む。According to the present invention, there is provided an electrophotographic apparatus in which charging, exposure, development, transfer, and cleaning are sequentially repeated on a light receiving member, and a developer having an average particle size of 5 to 8 μm is developed on the light receiving member. After the A4 plate copying process is performed on transfer paper with an electrophotographic apparatus that scrapes and cleans the surface of the light receiving member after transfer of the developer and the developer is transferred with an elastic rubber plate having a rebound resilience of 10% to 50%. Quantity 1
An electrophotographic apparatus characterized by using a light-receiving member having a surface layer of a non-single-crystal silicon carbide film having a thickness of Å / 10,000 or more and 100 Å / 10,000 or less, In the electrophotographic apparatus, in which charging, exposure, development, transfer, and cleaning are sequentially repeated, the electrophotographic apparatus does not include a rubbing cleaning unit using a cleaning roller and does not include a unit that directly heats the light receiving member. The receiving member is a photoconductive layer composed of a non-single-crystal material having a silicon atom as a base material on a conductive substrate and a light-receiving member composed of a surface layer composed of a non-single-crystal material; Dynamic hardness is 100 to 950, the carbon content (C / Si + C) of the non-single-crystalline silicon carbide film is 5% to 90%, and the surface layer is Depositing a film by decomposing at least a silane-based gas and a hydrocarbon-based gas by a plasma CVD method using a high frequency of 1 to 450 MHz, wherein the light receiving member is a charge injection blocking layer, a photoconductive layer, The light receiving member includes three layers, that is, a charge transport layer, a charge generation layer, and a surface layer.
【0038】本発明の電子写真装置に用いるクリーニン
グブレードの反発弾性は10%以上50%以下が好適で
あり、ブレードの反発弾性が10%より低いとブレード
の特性としては、ゴム的状態からガラス状態に近付くた
め、材質としては脆くなりブレードの寿命を短くする方
向でありまた、クリーナーブレードの反発弾性が50%
を超えると、ブレードにビビリが発生しクリーニング性
が低下したり、ブレードが捲かれてしまい光受容部材表
面にダメージを与えてしまう等の問題が発生する場合が
ある。The rebound resilience of the cleaning blade used in the electrophotographic apparatus of the present invention is preferably from 10% to 50%, and when the rebound resilience of the blade is lower than 10%, the characteristics of the blade are changed from a rubbery state to a glassy state. , The material becomes brittle and the life of the blade is shortened, and the rebound resilience of the cleaner blade is 50%.
When the value exceeds the above, there may be a problem that the blade is chattered, the cleaning property is reduced, and the blade is rolled up to damage the surface of the light receiving member.
【0039】一方クリーニング性を向上するために、特
開昭54−143149に記載されているような溝付き
ブレードや、特開昭57−124777に記載されてい
るような突起付きブレード等が考案されているが、小粒
径の現像剤を使用し、クリーニングローラー等の摺擦手
段を設けずさらに、光受容部材の加温手段を設けない電
子写真装置と非晶質炭素化珪素膜を表面層に設けた光受
容部材表面の摩耗量との関係に関する記載はなされてい
ない。On the other hand, in order to improve the cleaning performance, a blade with a groove as described in JP-A-54-143149, a blade with a projection as described in JP-A-57-124777, and the like have been devised. However, an electrophotographic apparatus using a developer having a small particle size, not providing a rubbing means such as a cleaning roller, and further not providing a heating means for a light receiving member, and an amorphous carbonized silicon film as a surface layer. Does not describe the relationship with the amount of wear on the surface of the light receiving member provided in the above.
【0040】本発明においては、光受容部材に用いるa
−SiC:H表面層のダイナミック硬度は100〜95
0でありダイナミック硬度が100より小さい値になる
と機械的硬度が損なわれ、ダイナミック硬度の値が95
0より大きくなると表面層の摩耗量が減少するため、表
面層が削れにくくなりコロナ放電生成物を削り取る効果
が低減し画像流れが発生する場合がある。また、表面層
の膜中に含まれる炭素量はC/(Si+C)で5%〜9
0%、好適には45%〜80%が適している。炭素量が
5%以下だと感度的に電子写真装置に適さない場合があ
る。また90%を超えると膜の緻密化が損なわれ、機械
的強度が損なわれる。In the present invention, a
The dynamic hardness of the SiC: H surface layer is 100 to 95;
When the dynamic hardness is less than 0 and the dynamic hardness is less than 100, the mechanical hardness is impaired, and the dynamic hardness becomes 95.
If it is larger than 0, the abrasion amount of the surface layer is reduced, so that the surface layer is hardly abraded, the effect of scraping off the corona discharge product is reduced, and image deletion may occur. The amount of carbon contained in the surface layer film is 5% to 9 in C / (Si + C).
0%, preferably 45% to 80% is suitable. If the carbon content is less than 5%, it may not be sensitively suitable for an electrophotographic apparatus. If it exceeds 90%, the densification of the film is impaired, and the mechanical strength is impaired.
【0041】上記、炭素量及びダイナミック硬度の範囲
おいて、該表面層はA4版の複写工程を転写紙に行った
後の摩耗量が1オングストローム/1万枚以上100オ
ングストローム/1万枚以下の範囲を選択することによ
り摩擦によるブレードのビビリが少なく、ブレード面の
部分的なストレスが抑えられるため、現像剤の部分的な
滞留が緩和される。その結果、ムラ削れせず均一に表面
層が摩耗することにより、クリーニング性に優れ、トナ
ーの飛散がなく、ワイヤー汚れ及び、削れの効果により
融着を防止することが可能であることを見出した。ま
た、表面層が均一に摩耗することにより、光受容部材表
面に付着したコロナ放電生成物が効率よくムラなく削り
取られるため、光受容部材を加温する手段及び、光受容
部材表面を摺擦する手段を設けずとも、如何なる環境条
件下においても画像流れが発生しないことを見出したも
のである。Within the above ranges of the carbon content and the dynamic hardness, the surface layer has an abrasion loss of not less than 1 angstroms / 10,000 sheets and not more than 100 angstroms / 10,000 sheets after the copying process of the A4 plate is performed on the transfer paper. By selecting the range, chattering of the blade due to friction is reduced, and partial stress on the blade surface is suppressed, so that partial stagnation of the developer is reduced. As a result, it has been found that since the surface layer is uniformly worn without uneven shaving, the cleaning property is excellent, the toner is not scattered, the wire is stained, and the fusion can be prevented by the shaving effect. . In addition, since the surface layer is uniformly worn, the corona discharge products attached to the surface of the light receiving member are efficiently scraped off evenly, so that the means for heating the light receiving member and the surface of the light receiving member are rubbed. It has been found that, even if no means is provided, no image deletion occurs under any environmental conditions.
【0042】本発明に用いる光受容部材の表面層の摩耗
量が、100オングストローム/1万枚より大きい値に
なると機械的強度が損なわれる場合があり、1オングス
トローム/1万枚より小さい値になると表面層が摩耗し
にくくなりコロナ放電生成物を削り取る効果が低減し画
像流れが発生する場合がある。When the wear amount of the surface layer of the light receiving member used in the present invention is more than 100 Å / 10,000 sheets, the mechanical strength may be impaired, and when the wear amount is less than 1 Å / 10,000 sheets. The surface layer is less likely to be worn, and the effect of scraping off corona discharge products is reduced, which may cause image deletion.
【0043】さらに本発明の光受容部材に用いる表面層
の膜厚としては表面層の摩耗量と電子写真装置の寿命と
の関係から最適な膜厚が決定できるが、一般的には0.
01μm〜10μm、好適には0.1μm〜1μmの範
囲が望ましい。表面層の膜厚が0.01μm以下だと機
械的強度が損なわれ、10μm以上になると残留電位が
高くなる場合がある。Further, the optimum thickness of the surface layer used in the light receiving member of the present invention can be determined from the relationship between the wear amount of the surface layer and the life of the electrophotographic apparatus.
The range is preferably from 01 μm to 10 μm, more preferably from 0.1 μm to 1 μm. When the thickness of the surface layer is 0.01 μm or less, the mechanical strength is impaired, and when it is 10 μm or more, the residual potential may increase.
【0044】[0044]
【発明の実施の形態】以下、図面を参照して本発明を詳
細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings.
【0045】図1の(A)及び(B)は本発明による光
受容部材の模式的な断面図の一例であり図1において
(A)は光導電層が機能分離されていない単一層からな
る単層型光受容部材である。また、(B)は光導電層が
電荷発生層と電荷輸送層とに分離された機能分離型光受
容部材である。FIGS. 1A and 1B are examples of schematic cross-sectional views of a light receiving member according to the present invention. In FIG. 1, FIG. 1A shows a single layer in which the photoconductive layer is not functionally separated. It is a single-layer light receiving member. (B) is a function-separated light-receiving member in which a photoconductive layer is separated into a charge generation layer and a charge transport layer.
【0046】図1(A)に示すa−Si系光受容部材は
アルミニウム等の導電性基体101と、導電性基体10
1の表面に順次積層された電荷注入阻止層102と光導
電層103及び表面層104からなる。ここで、電荷注
入阻止層102は導電性基体101から光導電層103
への電荷の注入を阻止するものであり、必要に応じて設
けられる。また、光導電層103は少なくともシリコン
原子を含む非晶質材料で構成され、光導電性を示すもの
である。さらに表面層104は少なくともシリコン原子
及び、炭素原子と水素原子を含む非晶質材料で構成さ
れ、電子写真装置における顕像を保持する能力をもつも
のである。The a-Si light receiving member shown in FIG. 1A is made of a conductive substrate 101 such as aluminum and a conductive substrate 10.
The charge injection blocking layer 102, the photoconductive layer 103, and the surface layer 104 are sequentially laminated on the surface of the substrate 1. Here, the charge injection blocking layer 102 is formed from the conductive substrate 101 to the photoconductive layer 103.
This is to prevent the injection of electric charge into the device, and is provided as needed. In addition, the photoconductive layer 103 is made of an amorphous material containing at least silicon atoms and has photoconductivity. Further, the surface layer 104 is made of an amorphous material containing at least silicon atoms and carbon atoms and hydrogen atoms, and has a capability of maintaining a visible image in an electrophotographic apparatus.
【0047】以下では、電荷注入阻止層102の有無に
より効果が異なる場合を除いては、電荷注入阻止層10
2はあるものとして説明する。In the following, the charge injection blocking layer 10 is used except when the effect differs depending on the presence or absence of the charge injection blocking layer 102.
2 will be described as being present.
【0048】図1(B)に示すa−Si系光受容部材
は、光導電層103が少なくともシリコン原子と炭素原
子を含む非晶質材料で構成された電荷輸送層106と、
少なくともシリコン原子を含む非晶質材料で構成された
電荷発生層105が順次積層された構成の機能分離型と
した光受容部材である。この光受容部材に光照射すると
主として電荷発生層105で生成されたキャリアーが電
荷輸送層106を通過して導電性基体101に至る。The a-Si light receiving member shown in FIG. 1B has a charge transport layer 106 in which the photoconductive layer 103 is made of an amorphous material containing at least silicon atoms and carbon atoms.
This is a function-separated type light receiving member having a configuration in which charge generation layers 105 made of an amorphous material containing at least silicon atoms are sequentially stacked. When the light receiving member is irradiated with light, carriers mainly generated in the charge generation layer 105 pass through the charge transport layer 106 and reach the conductive substrate 101.
【0049】なお、表面層104の成膜ガスとしては、
SiH4 ,Si2 H6 ,Si3 H8,Si4 H10等の水
素化珪素及びCH4 ,C2 H6 ,C3 H8 ,C4 H10等
のガス、及びガス化し得る炭化水素が有効に使用される
ものとして挙げられる。また、これらの炭素供給用の原
料ガスを必要に応じてH2 ,He,Ar,Ne等のガス
により希釈して使用してもよい。The film forming gas for the surface layer 104 is as follows.
Silicon hydrides such as SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 and gases such as CH 4 , C 2 H 6 , C 3 H 8 , C 4 H 10 and hydrocarbons which can be gasified Are effectively used. Further, these raw material gases for supplying carbon may be diluted with a gas such as H 2 , He, Ar, Ne or the like as necessary.
【0050】図2は、プラズマCVD法による光受容部
材の一般的堆積装置の一例を模式的に示した図である。FIG. 2 is a diagram schematically showing an example of a general apparatus for depositing a light receiving member by a plasma CVD method.
【0051】この装置は大別すると、堆積装置210
0、原料ガスの供給装置2200、反応容器2110内
を減圧するための排気装置(図示せず)から構成されて
いる。堆積装置2100中の反応容器2110内にはア
ースに接続された円筒状被成膜基体2112、円筒状被
成膜基体の加熱用ヒーター2113、原料ガス導入管2
114が設置され、さらに高周波マッチングボックス2
115を介して高周波電源2120が接続されている。This apparatus is roughly classified into a deposition apparatus 210
0, a source gas supply device 2200, and an exhaust device (not shown) for reducing the pressure inside the reaction vessel 2110. A cylindrical deposition substrate 2112 connected to the ground, a heater 2113 for heating the cylindrical deposition substrate, a source gas introduction pipe 2 are provided in a reaction vessel 2110 in the deposition apparatus 2100.
114, and a high-frequency matching box 2
A high frequency power supply 2120 is connected via 115.
【0052】原料ガス供給装置2200は、SiH4 ,
H2 ,CH4 ,NO,B2 H6 ,CF4 等の原料ガスボ
ンベ2221〜2226とバルブ2231〜2236,
2241〜2246,2251〜2256及びマスフロ
ーコントローラー2211〜2216から構成され、各
構成ガスのボンベはバルブ2260を介して反応容器2
110内のガス導入管2114に接続されている。The raw material gas supply device 2200 includes SiH 4 ,
H 2 , CH 4 , NO, B 2 H 6 , CF 4, etc. source gas cylinders 2221-2226 and valves 2231-2236,
2241 to 2246, 2251 to 2256 and mass flow controllers 2211 to 2216, and the cylinders for the respective constituent gases are supplied to the reaction vessel 2 via a valve 2260.
It is connected to a gas introduction pipe 2114 in 110.
【0053】円筒状被成膜基体2112は導電性受け台
2123の上に設置されることによってアースに接続さ
れる。The cylindrical film-forming substrate 2112 is connected to the ground by being placed on the conductive support 2123.
【0054】以下、図2の装置を用いた、光受容部材の
形成方法の手順の一例について説明する。An example of a procedure of a method for forming a light receiving member using the apparatus shown in FIG. 2 will be described below.
【0055】反応容器2110内に円筒状被成膜基体2
112を設置し、不図示の排気装置(例えば真空ポン
プ)により反応容器2110内を排気する。続いて円筒
状被成膜基体加熱用ヒーター2113により円筒状被成
膜基体2112の温度を20℃〜500℃の所望の温度
に制御する。次いで、光受容部材形成用の原料ガスを反
応容器2110内に流入させるにはガスボンベのバルブ
2231〜2236、反応容器のリークバルブ2117
が閉じられていること確認しまた、流入バルブ2241
〜2246、流出バルブ2251〜2256、補助バル
ブ2260が開かれていることを確認し、メインバルブ
2118を開いて反応容器2110及びガス供給配管2
116を排気する。In the reaction vessel 2110, the cylindrical substrate 2 is formed.
The reactor 112 is installed, and the inside of the reaction vessel 2110 is exhausted by an exhaust device (not shown) (for example, a vacuum pump). Subsequently, the temperature of the cylindrical substrate 2112 is controlled to a desired temperature of 20 ° C. to 500 ° C. by the heater 2113 for heating the cylindrical substrate. Next, in order to allow the source gas for forming the light receiving member to flow into the reaction vessel 2110, the valves 2231 to 2236 of the gas cylinder and the leak valve 2117 of the reaction vessel are used.
Is closed and the inlet valve 2241
2246, the outflow valves 2251 to 2256, and the auxiliary valve 2260 are opened, the main valve 2118 is opened, and the reaction vessel 2110 and the gas supply pipe 2 are opened.
Exhaust 116.
【0056】その後、真空計2119の読みが0.7P
aになった時点で補助バルブ2260、流出バルブ22
51〜2256を閉じる。その後ガスボンベ2221〜
2226より各ガスをバルブ2231〜2236を開い
て導入し圧力調整器2261〜2266により各ガス圧
を2kg/cm2 に調整する。次に流入バルブ2241
〜2246を徐々に開けて各ガスをマスフローコントロ
ーラ2211〜2216内に導入する。Thereafter, the gauge 2119 reads 0.7P
a, the auxiliary valve 2260 and the outflow valve 22
Close 51-2256. Then the gas cylinder 2221
From 2226, each gas is introduced by opening valves 2231 to 2236, and each gas pressure is adjusted to 2 kg / cm 2 by pressure regulators 2261 to 2266. Next, the inflow valve 2241
2246 are gradually opened to introduce each gas into the mass flow controllers 2211 to 2216.
【0057】以上の手順によって成膜準備を完了した
後、円筒状被成膜基体2112上に、まず光導電層の形
成を行う。After the preparation for film formation is completed by the above procedure, a photoconductive layer is first formed on the cylindrical substrate 2112 for film formation.
【0058】すなわち、円筒状被成膜基体2112が所
望の温度になったところで、各流出バルブ2251〜2
256のうちの必要なものと補助バルブ2260とを徐
々に開き、各ガスボンベ2221〜2226から所望の
原料ガスをガス導入管2114を介して反応容器211
0内に導入する。次に、各マスフローコントローラー2
211〜2216によって、各原料ガスが所望の流量に
なるように調整する。その際、反応容器2110内が1
33Pa以下の所望の圧力にあるように、真空計211
9を見ながらメインバルブ2118の開口を調整する。
内圧が安定したところで、高周波電源2120を所望の
電力に設定して例えば、周波数1MHz〜450MHz
の高周波電力を高周波マッチングボックス2115を通
じてカソード電極2111に供給し高周波グロー放電を
生起させる。この放電エネルギーによって反応容器21
10内に導入させた各原料ガスが分解され、円筒状被成
膜基体2112上に所望のシリコン原子を主成分とする
光導電層が堆積される。所望の膜厚の形成が行われた
後、高周波電力の供給を止め、各流出バルブ2251〜
2256を閉じて反応容器2110への各原料ガスの流
入を止め、光導電層の形成を終える。That is, when the temperature of the cylindrical substrate 2112 reaches a desired temperature, each of the outflow valves 2251 to 2251
The necessary one of the 256 and the auxiliary valve 2260 are gradually opened, and a desired raw material gas is supplied from each of the gas cylinders 2221 to 2226 through the gas introduction pipe 2114 to the reaction vessel 211.
Introduce into 0. Next, each mass flow controller 2
According to 211 to 2216, each raw material gas is adjusted so as to have a desired flow rate. At this time, the inside of the reaction vessel 2110 is 1
Vacuum gauge 211 so as to be at a desired pressure of 33 Pa or less.
9 while adjusting the opening of the main valve 2118.
When the internal pressure is stabilized, the high-frequency power supply 2120 is set to a desired power, for example, at a frequency of 1 MHz to 450 MHz.
Is supplied to the cathode electrode 2111 through the high frequency matching box 2115 to generate a high frequency glow discharge. This discharge energy causes the reaction vessel 21
Each of the source gases introduced into 10 is decomposed, and a photoconductive layer mainly composed of desired silicon atoms is deposited on cylindrical deposition substrate 2112. After the desired film thickness is formed, the supply of the high-frequency power is stopped, and each of the outflow valves 2251 to
By closing 2256, the flow of each source gas into the reaction vessel 2110 is stopped, and the formation of the photoconductive layer is completed.
【0059】光導電層の組成や膜厚は公知のものを使用
することができる。Known compositions and thicknesses of the photoconductive layer can be used.
【0060】上記光導電層に表面層を形成する場合も基
本的には上記の操作を繰り返せばよい。When the surface layer is formed on the photoconductive layer, basically, the above operation may be repeated.
【0061】図3は、高周波電源を用いたプラズマCV
D法による光受容部材の堆積装置の別の一例を模式的に
示した図である。FIG. 3 shows a plasma CV using a high frequency power supply.
It is the figure which showed typically another example of the deposition apparatus of the light receiving member by the D method.
【0062】この装置は大別すると、堆積装置310
0、原料ガスの供給装置3200、反応容器3110内
を減圧するための排気装置(図示せず)から構成されて
いる。堆積装置3100中の反応容器3110内にアー
スに接続された円筒状被成膜基体3112、円筒状被成
膜基体の加熱用ヒーター3113、原料ガス導入管31
14が設置され、さらに高周波マッチングボックス31
15を介して高周波電源3120が接続されている。This apparatus is roughly classified into a deposition apparatus 310
0, a source gas supply device 3200, and an exhaust device (not shown) for reducing the pressure inside the reaction vessel 3110. A cylindrical film-forming substrate 3112 connected to the ground, a heater 3113 for heating the cylindrical film-forming substrate, and a source gas introducing pipe 31 in a reaction vessel 3110 in the deposition apparatus 3100.
14, and a high-frequency matching box 31
A high-frequency power supply 3120 is connected via the power supply 15.
【0063】原料ガス供給装置3200は、SiH4 ,
H2 ,CH4 ,NO,B2 H6 ,CF4 等の原料ガスボ
ンベ3221〜3226とバルブ3231〜3236,
3241〜3246,3251〜3256及びマスフロ
ーコントローラー3111〜3216から構成され、各
構成ガスのボンベハバルブ3260を介して反応容器3
110内のガス導入管3114に接続されている。The raw material gas supply device 3200 includes SiH 4 ,
Raw material gas cylinders 3221 to 226 such as H 2 , CH 4 , NO, B 2 H 6 , CF 4, etc.
3241 to 3246, 3251 to 256, and mass flow controllers 3111 to 216, and the reaction vessel 3 via a cylinder valve 3260 for each constituent gas.
It is connected to a gas introduction pipe 3114 in 110.
【0064】円筒状被成膜基体3112は導電性受け台
3123の上に設置されることによってアースに接続さ
れる。また、カソード電極3111は導電性材料からな
り、絶縁材料3121によって絶縁されている。The cylindrical film-forming substrate 3112 is connected to the ground by being placed on the conductive support 3123. In addition, the cathode electrode 3111 is made of a conductive material, and is insulated by the insulating material 3121.
【0065】導電性受け台3123に用いる導電性材料
としては、銅、アルミニウム、金、銀、白金、鉛、ニッ
ケル、コバルト、鉄、クロム、モリブデン、チタン、ス
テンレス及び、これらの材料の2種類以上の複合材料等
が使用できる。Examples of the conductive material used for the conductive support 3123 include copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel, and two or more of these materials. Can be used.
【0066】カソード電極3111を絶縁するための絶
縁材料としては、セラミックス、テフロン、マイカ、ガ
ラス、石英、シリコーンゴム、ポリエチレン、ポリプロ
ピレン等の絶縁材が使用できる。As an insulating material for insulating the cathode electrode 3111, an insulating material such as ceramics, Teflon, mica, glass, quartz, silicone rubber, polyethylene and polypropylene can be used.
【0067】使用されるマチングボックスは3115は
高周波電源3120と負荷の整合を取ることができるも
のであれば如何なる構成のものでも好適に使用できる。
また、整合を取る方法としては、自動的に調整されるも
のが好適であるが手動で調整されるものであっても本発
明の効果には全く影響はない。As the matching box 3115, any structure can be suitably used as long as it can match the load with the high frequency power supply 3120.
Further, as a method for obtaining the matching, it is preferable that the adjustment is performed automatically. However, even if the adjustment is performed manually, the effect of the present invention is not affected at all.
【0068】高周波電力が印加されるカソード電極31
11の材質としては銅、アルミニウム、金、銀、白金、
鉛、ニッケル、コバルト、鉄、クロム、モリブデン、チ
タン、ステンレス及び、これらの材料の2種類以上の複
合材料等が使用できる。また、形状は円筒形状が好まし
いが必要に応じて楕円形状、多角形状を用いてもよい。Cathode electrode 31 to which high-frequency power is applied
Materials of 11 include copper, aluminum, gold, silver, platinum,
Lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel, and composite materials of two or more of these materials can be used. The shape is preferably a cylindrical shape, but an elliptical shape or a polygonal shape may be used if necessary.
【0069】カソード電極3111は必要に応じて冷却
手段を設けてもよい。具体的な冷却手段としては水、空
気、液体窒素、ペルチェ素子等による冷却が必要に応じ
て用いられる。The cathode electrode 3111 may be provided with a cooling means if necessary. As a specific cooling means, cooling with water, air, liquid nitrogen, a Peltier element or the like is used as necessary.
【0070】本発明に用いる円筒状被成膜基体3112
は、使用目的に応じた材質や形状を有するものであれば
よい。例えば、形状に関しては、電子写真用感光体を製
造する場合には、円筒状が望ましいが、必要に応じて平
板状や、その他の形状であってもよい。また、材質にお
いては、銅、アルミニウム、金、銀、白金、鉛、ニッケ
ル、コバルト、鉄、クロム、モリブデン、チタン、ステ
ンレス及び、これらの材料を2種類以上の複合材料、さ
らにはポリエステル、ポリエチレン、ポリカーボネー
ト、セルロースアセテート、ポリプロピレン、ポリ塩化
ビニル、ポリ塩化ビニリデン、ポリスチレン、ガラス、
石英、セラミックス、紙等の絶縁材料に導電性材料を被
覆したもの等が使用できる。The cylindrical substrate 3112 used in the present invention.
May have any material or shape according to the purpose of use. For example, the shape is preferably cylindrical when an electrophotographic photoreceptor is manufactured, but may be flat or another shape if necessary. In addition, in the material, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel, and two or more composite materials of these materials, further, polyester, polyethylene, Polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, glass,
An insulating material such as quartz, ceramics, paper or the like coated with a conductive material can be used.
【0071】以下、図3の装置を用いた、光受容部材の
形成方法の手順の一例について説明する。An example of a procedure of a method for forming a light receiving member using the apparatus shown in FIG. 3 will be described below.
【0072】反応容器3110内に円筒状被成膜基体3
112を設置し、不図示の排気装置(例えば真空ポン
プ)により反応容器3110内を排気する。続いて円筒
状被成膜基体加熱用ヒーター3113により円筒状被成
膜基体3112の温度を20℃〜500℃の所定の温度
に制御する。A cylindrical film-forming substrate 3 is placed in a reaction vessel 3110.
The reactor 112 is installed, and the inside of the reaction vessel 3110 is evacuated by an exhaust device (not shown) (for example, a vacuum pump). Subsequently, the temperature of the cylindrical substrate 3112 is controlled to a predetermined temperature of 20 ° C. to 500 ° C. by the heater 3113 for heating the cylindrical substrate.
【0073】光受容部材形成用の原料ガスを反応容器3
110内に流入させるにはガスボンベのバルブ3231
〜3236、反応容器のリークバルブ2117が閉じら
れていることを確認しまた、流入バルブ3241〜32
46、流出バルブ3251〜3256、補助バルブ32
60が開かれていることを確認し、メインバルブ311
8を開いて反応容器3110及びガス供給配管3116
を排気する。The raw material gas for forming the light receiving member is supplied to the reaction vessel 3
To allow the gas to flow into 110, the valve 3231 of the gas cylinder is used.
3236, and confirmed that the leak valve 2117 of the reaction vessel was closed.
46, outflow valves 3251 to 256, auxiliary valve 32
Check that 60 is open, and
8 to open the reaction vessel 3110 and the gas supply pipe 3116
Exhaust.
【0074】次に真空系3119の読みが5×10-6T
orrになった時点で補助バルブ3260、流出バルブ
3251〜3256を閉じる。その後ガスボンベ322
1〜3226より各ガスをバルブ3231〜3236を
開いて導入し圧力調整器3261〜3266により各ガ
ス圧を2kg/cm2 に調整する。次に流入バルブ32
41〜3246を徐々に開けて各ガスをマスフローコン
トローラ3211〜3216内に導入する。Next, the reading of the vacuum system 3119 is 5 × 10 −6 T.
When it reaches orr, the auxiliary valve 3260 and the outflow valves 3251 to 256 are closed. Then gas cylinder 322
Each gas is introduced from 1 to 3226 by opening valves 3231 to 236, and each gas pressure is adjusted to 2 kg / cm 2 by pressure regulators 3261 to 2266. Next, the inflow valve 32
The gas is introduced into the mass flow controllers 3211 to 216 by gradually opening the ports 41 to 246.
【0075】以上の手順によって成膜準備を完了した
後、円筒状被成膜基体3112上に光導電層の形成を行
う。After the preparation for film formation is completed by the above procedure, a photoconductive layer is formed on the cylindrical substrate 3112 for film formation.
【0076】円筒状被成膜基体3112が所定の温度に
なったところで、各流出バルブ3251〜3256のう
ちの必要なものと補助バルブ3260とを徐々に開き、
各ガスボンベ3221〜3226から所定の原料ガスを
ガス導入管3114を介して反応容器3110内に導入
する。次に、各マスフローコントローラー3211〜3
216によって、各原料ガスが所定の流量になるように
調整する。その際、反応容器3110内が133Pa以
下の所定の圧力になるように、真空計3119を見なが
らメインバルブ3118の開口を調整する。内圧が安定
したところで、高周波電源3120を所望の電力に設定
して例えば周波数1MHz〜45MHzの高周波電力を
高周波マッチングボックス3115を通じてカソード電
極3111に供給し高周波グロー放電を生起させる。こ
の放電エネルギーによって反応容器3110内に導入さ
せた各原料ガスが分解され、円筒状被成膜基体3112
上に所定のシリコン原子を主成分とする堆積膜が形成さ
れる。所望の膜厚の形成が行われた後、高周波電力の供
給を止め、各流出バルブ3251〜3256を閉じて反
応容器3110への各原料ガスの流入を止め、堆積膜の
形成を終える。When the temperature of the cylindrical substrate 3112 reaches a predetermined temperature, a necessary one of the outflow valves 3251 to 256 and the auxiliary valve 3260 are gradually opened.
A predetermined source gas is introduced from each of the gas cylinders 3221 to 226 into the reaction vessel 3110 via the gas introduction pipe 3114. Next, each of the mass flow controllers 3211 to 3211
In step 216, each source gas is adjusted to have a predetermined flow rate. At this time, the opening of the main valve 3118 is adjusted while watching the vacuum gauge 3119 so that the inside of the reaction vessel 3110 has a predetermined pressure of 133 Pa or less. When the internal pressure is stabilized, the high-frequency power supply 3120 is set to a desired power, and high-frequency power having a frequency of 1 MHz to 45 MHz is supplied to the cathode electrode 3111 through the high-frequency matching box 3115 to generate a high-frequency glow discharge. Each source gas introduced into the reaction vessel 3110 is decomposed by this discharge energy, and the cylindrical substrate 3112 is formed.
A deposited film mainly containing predetermined silicon atoms is formed thereon. After the desired film thickness is formed, the supply of the high-frequency power is stopped, the outflow valves 3251 to 256 are closed to stop the flow of the source gases into the reaction vessel 3110, and the formation of the deposited film is completed.
【0077】また、本発明の表面層を形成する場合も基
本的には上記の操作を繰り返せばよい。Further, when the surface layer of the present invention is formed, the above operation may be basically repeated.
【0078】具体的には各流出バルブ3251〜325
6のうちの必要なものと補助バルブ3260とを徐々に
開き、各ガスボンベ3221〜3226から表面層に必
要な原料ガスをガス導入管2114を介して反応容器2
110内に導入する。次に、各マスフローコントローラ
ー3211〜3216によって、各原料ガスが所定の流
量になるように調整する。その際、反応容器3110内
が133Pa以下の所定の圧力になるように、真空系3
119を見ながらメインバルブ3118の開口を調整す
る。内圧が安定したところで、高周波電源3120を所
望の電力に設定した周波数1MHz〜450MHzの高
周波電力を高周波マッチングボックス3115を通じて
カソード電極3111に供給し高周波グロー放電を生起
させる。この放電エネルギーによって反応容器3110
内に導入させた各原料ガスが分解され、表面層が形成さ
れる。所望の膜厚の形成が行われた後、高周波電力の供
給を止め、各流出バルブ3251〜3256を閉じて反
応容器3110への各原料の流入を止め、表面層の形成
を終える。Specifically, each of the outflow valves 3251 to 325
6 and the auxiliary valve 3260 are gradually opened, and the raw material gas required for the surface layer is supplied from the gas cylinders 3221 to 226 via the gas introduction pipe 2114 to the reaction vessel 2.
Introduced into 110. Next, each of the mass flow controllers 3211 to 216 adjusts each of the raw material gases to a predetermined flow rate. At this time, the vacuum system 3 is controlled so that the inside of the reaction vessel 3110 has a predetermined pressure of 133 Pa or less.
The opening of the main valve 3118 is adjusted while looking at 119. When the internal pressure is stabilized, the high-frequency power supply 3120 is supplied with high-frequency power of a frequency of 1 MHz to 450 MHz set to a desired power to the cathode electrode 3111 through the high-frequency matching box 3115 to generate a high-frequency glow discharge. The discharge energy causes the reaction vessel 3110
Each raw material gas introduced therein is decomposed to form a surface layer. After the formation of the desired film thickness, the supply of the high-frequency power is stopped, the outflow valves 3251 to 256 are closed to stop the flow of the respective raw materials into the reaction vessel 3110, and the formation of the surface layer is completed.
【0079】なお、膜形成を行っている間は円筒状被成
膜基体3112を駆動装置(不図示)によって所定の速
度で回転させてもよい。During the film formation, the cylindrical substrate 3112 may be rotated at a predetermined speed by a driving device (not shown).
【0080】図4は電子写真装置の画像形成プロセスの
一例を説明するための電子写真装置の一例を示す概略図
であって、光受容部材401は内側に設けられた面状ヒ
ーター423によって温度コントロール可能とされ、必
要に応じて矢印X方向に回転する。光受容部材401の
周辺には、主帯電器402、静電潜像形成部位403、
現像器404、転写材供給系405、転写帯電器406
(a)、分離帯電器406(b)、クリーナー425、
搬送系408、除電光源409等が必要に応じて配設さ
れている。FIG. 4 is a schematic view showing an example of an electrophotographic apparatus for explaining an example of an image forming process of the electrophotographic apparatus. The light receiving member 401 is controlled in temperature by a sheet heater 423 provided inside. It is enabled and rotates in the direction of arrow X as needed. Around the light receiving member 401, a main charger 402, an electrostatic latent image forming portion 403,
Developing device 404, transfer material supply system 405, transfer charger 406
(A), a separation charger 406 (b), a cleaner 425,
A transport system 408, a static elimination light source 409, and the like are provided as needed.
【0081】以下、さらに具体的に画像形成プロセスの
一例を説明する。光受容部材401は+6〜8kVの高
電圧を印加した主帯電器402により一様に帯電され
る。これに静電潜像部位に、ランプ410から発した光
が原稿台ガラス411上に置かれた原稿412に反射
し、ミラー413,414,415を経由し、レンズユ
ニット417のレンズ418によって結像され、ミラー
416を経由して導かれ、情報を担った光として投影さ
れ、光受容部材401上に静電潜像が形成される。この
潜像の現像器404からネガ極性の現像剤が供給されて
現像剤像が形成される。なお、この露光は原稿が412
からの反射によらず、LEDアレーやレーザービーム、
もしくは液晶シャッター等を用いて情報を担った光を走
査露光するようにしてもよい。Hereinafter, an example of the image forming process will be described more specifically. The light receiving member 401 is uniformly charged by the main charger 402 to which a high voltage of +6 to 8 kV is applied. The light emitted from the lamp 410 is reflected on the document 412 placed on the platen glass 411 at the portion of the electrostatic latent image, passes through the mirrors 413, 414, 415, and forms an image by the lens 418 of the lens unit 417. Then, the light is guided through the mirror 416, projected as light carrying information, and an electrostatic latent image is formed on the light receiving member 401. A developer having a negative polarity is supplied from the developing device 404 for the latent image to form a developer image. In this exposure, the original is 412
Regardless of the reflection from the LED array or laser beam,
Alternatively, light carrying information may be scanned and exposed using a liquid crystal shutter or the like.
【0082】一方、紙等の転写材Pは転写材供給系40
5を通って、レジストローラー422によって先端供給
タイミングを調整され、光受容部材401方向に供給さ
れる。転写材Pは+7〜8kVの高電圧を印加した転写
帯電器406(a)と光受容部材401の間隙において
背面から、現像剤とは逆極性の正電界を与えられ、これ
によって光受容部材表面のネガ極性の現像剤像は転写材
Pに転写する。次いで、12〜14kVp−p、300
〜600Hzの高圧AC電圧を印加した分離帯電器40
6(b)により、光受容部材401から分離される。続
いて転写材Pは転写搬送系408を通って定着装置42
4に至り、現像剤像が定着されて装置外に搬出される。On the other hand, a transfer material P such as paper is transferred to a transfer material supply system 40.
5, the leading end supply timing is adjusted by the registration roller 422, and the leading end is supplied toward the light receiving member 401. The transfer material P is applied with a positive electric field having a polarity opposite to that of the developer from the back surface in the gap between the transfer charger 406 (a) to which the high voltage of +7 to 8 kV is applied and the light receiving member 401, whereby the surface of the light receiving member is Is transferred to the transfer material P. Then, 12-14 kVp-p, 300
Separation charger 40 to which high-voltage AC voltage of ~ 600 Hz is applied
6 (b), it is separated from the light receiving member 401. Subsequently, the transfer material P passes through the transfer conveyance system 408 and is fixed to the fixing device 42.
Then, the developer image is fixed and is carried out of the apparatus.
【0083】光受容部材401上に残留する現像剤はク
リーナー425のクリーニングローラー407、及びシ
リコーンゴムやウレタンゴム等の弾性材料からなるクリ
ーニングブレード421によって回収され、残留する静
電潜像は除電光源409によって消去される。The developer remaining on the light receiving member 401 is collected by a cleaning roller 407 of a cleaner 425 and a cleaning blade 421 made of an elastic material such as silicone rubber or urethane rubber. Will be erased by
【0084】なお、420はブランク露光LEDで光受
容部材401の転写材Pの幅を超える部分及び余白部分
等の非画像部領域に不要な現像剤が付着しないように必
要に応じて光受容部材401を露光するために設けられ
る。Reference numeral 420 denotes a blank exposure LED, which is a light receiving member as necessary so that unnecessary developer does not adhere to a non-image area such as a portion exceeding the width of the transfer material P of the light receiving member 401 and a blank portion. It is provided for exposing 401.
【0085】以下、本発明を実施例を用いて具体的に説
明するが、本発明はこれらにより何ら限定されるもので
はない。Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited thereto.
【0086】[0086]
【実施例】[実施例1]図2に記載のプラズマCVD装
置を用いて表1の条件により円筒状導電性基体上に阻止
層、光導電層を積層した後、表2の条件で表面層を0.
5μm堆積しA〜Cの光受容部材を製造した。ただし、
球状突起を発生させるために、予め円筒状導電性基体の
表面にダストを付着させた状態で堆積膜の形成を行っ
た。Example 1 A blocking layer and a photoconductive layer were laminated on a cylindrical conductive substrate under the conditions shown in Table 1 using the plasma CVD apparatus shown in FIG. To 0.
Light receiving members A to C were manufactured by depositing 5 μm. However,
In order to generate spherical projections, a deposited film was formed in a state where dust was previously attached to the surface of the cylindrical conductive substrate.
【0087】さらに表面層の炭素含有量を測定するため
のサンプルとして7059ガラス基板上にも表2の条件
で表面層を0.5μm堆積しA〜Cのa−SiC:H表
面層サンプルを作成した。Further, as a sample for measuring the carbon content of the surface layer, a 0.5 μm surface layer was deposited on a 7059 glass substrate under the conditions shown in Table 2 to prepare a-C a-SiC: H surface layer samples. did.
【0088】このA〜Cの表面層サンプルに対して、S
IMSによる炭素量C/(Si+C)の測定を行った
後、島津製作所社製ダイナミック超微小硬度計(DUH
−201)によりダイナミック硬さを測定した。ただ
し、ダイナミック硬さ測定に用いた圧子は、稜間角11
5°の三角すい圧子(先端曲率半径0.1μm以下)を
使用して0.1gf荷重になるまで圧子を押し込んだと
きの値である。その結果、光受容部材A〜Cに積層した
表面層の炭素量及びダイナミック硬度は、表3に示した
値であった。For the surface layer samples A to C, S
After measuring the carbon content C / (Si + C) by IMS, a dynamic ultra-micro hardness tester (DUH manufactured by Shimadzu Corporation)
-201) was used to measure the dynamic hardness. However, the indenter used for the dynamic hardness measurement had an edge-to-edge angle of 11
This is the value when the indenter is pushed down to a load of 0.1 gf using a 5 ° triangular indenter (tip radius of curvature 0.1 μm or less). As a result, the carbon content and the dynamic hardness of the surface layers laminated on the light receiving members A to C were the values shown in Table 3.
【0089】次いで、光受容部材A〜Cをキャノン製複
写機NP−6085の改造機に搭載し光受容部材の移動
速度を300mm/secでA4版の連続通紙耐久を1
0万枚行いクリーニング性の評価を行った。ただしクリ
ーニング条件はクリーニングローラー407は設けず弾
性ゴムブレード421のみでスクレープクリーニングを
行うようにセッティングした。なお、弾性ゴムブレード
421は反発弾性10%のものを使用しまた、使用する
現像剤に関しては、現像剤の粒径が小さいほど、融着が
発生し易いことから粒径が6.5μmのものを使用し
た。さらに光受容部材の表面温度を60℃にコントロー
ルすることにより融着が発生し易い条件とした。Next, the light receiving members A to C are mounted on a modified machine of a copying machine NP-6085 manufactured by Canon Inc., and the moving speed of the light receiving members is 300 mm / sec.
The cleaning performance was evaluated by performing 100,000 sheets. However, the cleaning conditions were set so that the cleaning roller 407 was not provided, and the scrape cleaning was performed using only the elastic rubber blade 421. The elastic rubber blade 421 used has a rebound resilience of 10%. The smaller the particle size of the developer, the easier the fusion occurs. It was used. Further, by controlling the surface temperature of the light receiving member to 60 ° C., conditions were set such that fusion was easily generated.
【0090】以上の評価で得られた結果を表8に示す。
また耐久後の表面層の摩耗量を表3に示す。この表面層
の摩耗量は耐久前後の表面層膜厚を反射分光式干渉計に
より測定し、この値から1万枚当りの摩耗量に換算した
ものである。Table 8 shows the results obtained by the above evaluation.
Table 3 shows the amount of wear of the surface layer after durability. The abrasion amount of the surface layer is obtained by measuring the thickness of the surface layer before and after the endurance with a reflection spectroscopic interferometer and converting the value into the abrasion amount per 10,000 sheets.
【0091】また、耐久後の表面を金属顕微鏡で観察し
た結果、球状突起の先端部の高さはいずれも5μm以下
であった。さらに、ブレードエッジ部分を観察した結
果、球状突起が存在する部分に対応して若干の破損が認
められたがクリーニング不良が発生しない程度の軽微な
ものであった。Further, as a result of observing the surface after endurance with a metallographic microscope, the height of the tip of each spherical projection was 5 μm or less. Further, as a result of observing the blade edge portion, slight damage was recognized corresponding to the portion where the spherical projections were present, but the damage was slight enough that no cleaning failure occurred.
【0092】さらにA〜Cの光受容部材を加温手段を設
けずに、35℃相対湿度90%の環境下で10万枚の耐
久を行い、画像流れの評価を行った。ただし、クリーニ
ング条件はクリーニングローラー407は設けずに弾性
ゴムブレード421のみのクリーニングとし、ブレード
の押し圧を通常の80%の圧力でスクレープクリーニン
グを行うようにセッティングした。Further, 100,000 sheets of the photoreceptors A to C were durable in an environment of 35 ° C. and 90% relative humidity without providing a heating means, and the image deletion was evaluated. However, the cleaning condition was such that only the elastic rubber blade 421 was cleaned without providing the cleaning roller 407, and the blade was set so that the scrape cleaning was performed at a pressure of 80% of the normal pressure.
【0093】以上の評価で得られた結果を表9に示す。Table 9 shows the results obtained by the above evaluation.
【0094】その結果A,B,Cいずれの光受容部材に
おいても10万枚の耐久後でもムラ削れによって発生す
る黒スジ状の画像欠陥は全くなく、クリーニング不良や
融着等の画像欠陥に関しても全く発生しなかった。さら
に、画像流れに関しても光受容部材の加温手段を設けず
とも、良好な画像特性が得られた。As a result, in any of the light receiving members A, B, and C, even after the endurance of 100,000 sheets, there is no black streak-like image defect caused by uneven shaving, and the image defect such as defective cleaning or fusion is not observed. Not at all. Further, with respect to image deletion, good image characteristics were obtained without providing a heating means for the light receiving member.
【0095】(ムラ削れ評価方法)以下、ムラ削れの評
価方法を図4を用いて説明する。(Method for Evaluating Uneven Shaving) Hereinafter, a method for evaluating uneven shaving will be described with reference to FIG.
【0096】現像器404位置における暗部電位が40
0Vになるように主帯電器402の帯電電流量を調整
し、原稿台411にベタ黒の縦ラインを設けた原稿41
2を置き、光受容部材表面の母線方向において、常に現
像剤で摺擦される部分と摺擦されない部分を設け耐久を
行った後、現像器404位置における暗部電位が400
Vになるように主帯電器402の帯電電流量を調整し、
原稿台411にベタ白原稿412を置き、明部電位が5
0Vになるようにハロゲンランプ410の点灯電圧を調
整した後、反射濃度が0.3の原稿412を置く、この
ときの電位ムラを測定し、正常部分の電位に対するムラ
削れした部分の電位が何%変化しているかを評価する。The dark portion potential at the position of the developing device 404 is 40
The amount of the charging current of the main charger 402 is adjusted so as to be 0 V, and the original 41 having a solid black vertical line
2 in the generatrix direction on the surface of the light receiving member, a portion always rubbed with the developer and a portion not rubbed are provided for durability.
V, the charging current of the main charger 402 is adjusted
Place the solid white original 412 on the original platen 411 and set the bright area potential to 5
After adjusting the lighting voltage of the halogen lamp 410 so as to be 0 V, place the original 412 having a reflection density of 0.3. Measure the potential unevenness at this time. % Is changed.
【0097】 ○・・・感度ムラがなく良好な画像 △・・・2.5%以下の電位ムラがあるが画像は実用上
問題のなりレベル ×・・・2.5%以上の電位ムラが発生し画像にスジ状
の濃度ムラが発生・ ・ ・: Good image without sensitivity unevenness Δ: Potential unevenness of 2.5% or less, but an image poses a practical problem X: Potential unevenness of 2.5% or more Occurrence of streaks in image density
【0098】(融着評価方法)以下に、融着の評価方法
を同じく図4を用いて説明する。(Method of Evaluating Fusion) A method of evaluating fusion will be described below with reference to FIG.
【0099】現像器404位置における暗部電位が40
0Vになるように主帯電器402の帯電電流量を調整
し、原稿台411にベタ白の原稿412を置き、明部電
位が50Vになるようにハロゲンランプ410の点灯電
圧を調整し、A3版のベタ白画像を作成した。この画像
によって現像剤の融着により発生する黒ポチを観察し、
さらに顕微鏡により光受容部材表面を観察する。The dark portion potential at the position of the developing device 404 is 40
The charging current amount of the main charger 402 is adjusted so as to be 0 V, the solid white document 412 is placed on the document table 411, and the lighting voltage of the halogen lamp 410 is adjusted so that the bright portion potential becomes 50 V. A solid white image was created. Observing black spots generated by the fusion of the developer with this image,
Further, the surface of the light receiving member is observed with a microscope.
【0100】 ○・・・融着がなく良好な画像 △・・・画像には黒ポチは発生しないが顕微鏡観察で1
0μm以下の微小な融着が認められる(実用上問題な
し) ×・・・画像上に黒ポチとして発生○: good image without fusing △: no black spots on the image, but 1
Fine fusion of 0 μm or less is observed (no problem in practical use) ×: Black spots appear on the image
【0101】(クリーニング不良評価方法)以下に、ク
リーニング不良の評価方法を図4を用いて説明する。(Method of Evaluating Cleaning Failure) A method of evaluating a cleaning failure will be described below with reference to FIG.
【0102】現像器404位置における暗部電位が40
0Vになるように主帯電器402の帯電電流量を調整
し、原稿台411に反射濃度0.3の原稿412を置
き、明部電位が200Vになるようにハロゲンランプ4
10の点灯電圧を調整し、A3版のハーフトーン画像を
作成した。この画像によってワイヤー汚れによって発生
するズジ状の濃度ムラを観察する。The dark portion potential at the position of the developing device 404 is 40
The charging current amount of the main charger 402 is adjusted so as to be 0 V, the document 412 having a reflection density of 0.3 is placed on the document table 411, and the halogen lamp 4 is set so that the bright portion potential becomes 200 V.
The lighting voltage of No. 10 was adjusted, and an A3-size halftone image was created. The image is used to observe streaky density unevenness caused by wire contamination.
【0103】 ○・・・クリーニング不良がない良好な画像 △・・・幅1mm長さ1cm以内のクリーニング不良が
2個所以下あるが実用上問題のないレベル ×・・・幅1mm長さ1cm以内のクリーニング不良が
2個所以上発生・ ・ ・: Good image with no defective cleaning Δ: Level of 2 or less cleaning defects within 1 mm in width and 1 cm in length but no problem in practical use X: within 1 mm in width and 1 cm in length Cleaning failure occurs in two or more places
【0104】[0104]
【表1】 [Table 1]
【0105】[0105]
【表2】 [Table 2]
【0106】[0106]
【表3】 [Table 3]
【0107】[比較例1]実施例1と同様に、図2に記
載のプラズマCVD装置を用いて表1の条件で円筒状導
電性基体上に阻止層、光導電層を積層した後、表4の条
件で表面層を0.5μm堆積しA’〜C’の光受容部材
を製造した。さらに、7059基板上にも表4の条件で
A’〜C’のa−SiC表面層サンプルを作成し、実施
例1と同様の方法によりA’〜C’の表面層の炭素量及
びダイナミック硬度を測定した。[Comparative Example 1] As in Example 1, a blocking layer and a photoconductive layer were laminated on a cylindrical conductive substrate using the plasma CVD apparatus shown in FIG. Under the conditions of 4, a surface layer was deposited to a thickness of 0.5 μm to produce light receiving members A ′ to C ′. Further, a-SiC surface layer samples A 'to C' were prepared on the 7059 substrate under the conditions shown in Table 4, and the carbon content and the dynamic hardness of the surface layers A 'to C' were obtained in the same manner as in Example 1. Was measured.
【0108】その結果、光受容部材A’〜C’の表面層
の炭素量及びダイナミック硬度は、表5に示した値であ
った。As a result, the carbon content and the dynamic hardness of the surface layers of the light receiving members A ′ to C ′ were the values shown in Table 5.
【0109】次いで、この光受容部材A’〜C’をキャ
ノン製複写機NP−6085の改造機に搭載し、実施例
1と同様の条件で耐久評価を行った。ただし、光受容部
材の移動速度を300mm/secとしブレードは反発
弾性8%のものを使用した。この耐久後の表面層の摩耗
量を表5に示す。Next, the light receiving members A ′ to C ′ were mounted on a modified machine of a copying machine NP-6085 manufactured by Canon, and the durability was evaluated under the same conditions as in Example 1. However, the moving speed of the light receiving member was 300 mm / sec, and the blade used had a rebound resilience of 8%. Table 5 shows the wear amount of the surface layer after the durability.
【0110】また、金属顕微鏡によってドラム表面の球
状突起を観察した結果、球状突起の頭部が欠落し凹が多
数発生しており凹み部分を核に融着も発生していた。さ
らに凹みに対応するブレードエッジ部に破損が観察され
た。Further, as a result of observing the spherical projections on the drum surface with a metallographic microscope, it was found that the heads of the spherical projections were missing, a number of depressions were generated, and the depressions were fused to the nuclei. Further, damage was observed at the blade edge corresponding to the dent.
【0111】以上の評価で得られた結果を表12及び表
13に示す。Tables 12 and 13 show the results obtained by the above evaluation.
【0112】その結果、10万枚耐久によってムラ削れ
によるスジ状の画像欠陥が発生した。さらに、画像流れ
に関しても光受容部材の加温手段やクリーニングローラ
ーを設けない条件での耐久では、画像流れが発生する場
合があった。As a result, a streak-like image defect due to uneven scraping was generated during the durability of 100,000 sheets. Further, with respect to image deletion, there is a case where image deletion occurs in durability under the condition that the heating means of the light receiving member and the cleaning roller are not provided.
【0113】[0113]
【表4】 [Table 4]
【0114】[0114]
【表5】 [Table 5]
【0115】[実施例2]実施例1と同様に、図2に記
載のプラズマCVD装置を用いて表1の条件で円筒状導
電性基体上に阻止層、光導電層を積層した後、表6の条
件で表面層を0.5μm堆積しD〜Fの光受容部材を製
造した。さらに、7059ガラス基板上にも表6の条件
でD〜Fのa−SiC:H表面層サンプルを作成し、実
施例1と同様の方法によりD〜Fの表面層の炭素量及び
ダイナミック硬度を測定した。Example 2 As in Example 1, a blocking layer and a photoconductive layer were laminated on a cylindrical conductive substrate using the plasma CVD apparatus shown in FIG. Under the conditions of 6, a surface layer was deposited to a thickness of 0.5 μm to produce light receiving members D to F. Further, a-SiC: H surface layer samples of DF were prepared on a 7059 glass substrate under the conditions shown in Table 6, and the carbon content and dynamic hardness of the DF surface layer were determined in the same manner as in Example 1. It was measured.
【0116】その結果、光受容部材D〜Fの表面層の炭
素量及びダイナミック硬度は、表7に示した値であっ
た。As a result, the carbon content and the dynamic hardness of the surface layers of the light receiving members DF were the values shown in Table 7.
【0117】次いで、この光受容部材D〜Fをキャノン
製複写機NP−6085の改造機に搭載し、実施例1と
同様の条件で耐久評価を行った。ただし、光受容部材の
移動速度を400mm/secとしブレードは反発弾性
17%のものを使用した。この耐久後の表面層の摩耗量
を表7に示す。Next, the light receiving members D to F were mounted on a modified machine of a copying machine NP-6085 manufactured by Canon Inc., and the durability was evaluated under the same conditions as in Example 1. However, the moving speed of the light receiving member was 400 mm / sec, and the blade used had a rebound resilience of 17%. Table 7 shows the wear amount of the surface layer after the durability.
【0118】また、耐久後の表面を金属顕微鏡で観察し
た結果、球状突起の先端高さは何れも5μm以下であっ
た。さらに、ブレードエッジ部分を観察した結果、球状
突起が存在する部分に対応して若干の破損が認められた
がクリーニング不良が発生しない程度の軽微なものであ
った。Further, as a result of observing the surface after durability with a metallographic microscope, the tip height of each of the spherical projections was 5 μm or less. Further, as a result of observing the blade edge portion, slight damage was recognized corresponding to the portion where the spherical projections were present, but the damage was slight enough that no cleaning failure occurred.
【0119】以上の評価で得られた結果を表8に示す。Table 8 shows the results obtained in the above evaluation.
【0120】さらにD〜Fの光受容部材を加温手段を設
けずに、35℃相対湿度90%の環境下で10万枚の耐
久を行い、画像流れの評価を行った。ただしクリーニン
グ条件はクリーニングローラー407は設けず弾性ゴム
ブレード421のみのクリーニングとし、ブレードの押
し圧を通常の80%の圧力でスクレープクリーニングを
行うようにセッティングした。Further, 100,000 sheets of the light receiving members D to F were subjected to durability in an environment of 35 ° C. and a relative humidity of 90% without providing a heating means, and the image deletion was evaluated. However, the cleaning condition was such that only the elastic rubber blade 421 was cleaned without providing the cleaning roller 407, and the blade pressing pressure was set so as to perform scrape cleaning at a normal pressure of 80%.
【0121】以上の評価で得られた結果を表9に示す。Table 9 shows the results obtained by the above evaluation.
【0122】その結果、光受容部材D〜F何れの光受容
部材においても10万枚の耐久後でもムラ削れによって
発生するスジ状の画像欠陥は全くなく、クリーニング不
良や融着等の画像欠陥に関しても全く発生しなかった。
さらに、画像流れに関しても光受容部材の加温手段を設
けずとも、良好な画像特性が得られた。As a result, no streak-like image defects caused by uneven shaving were found in any of the light-receiving members D to F even after 100,000 sheets of paper had been used, and image defects such as poor cleaning and fusion were found. Did not occur at all.
Further, with respect to image deletion, good image characteristics were obtained without providing a heating means for the light receiving member.
【0123】[0123]
【表6】 [Table 6]
【0124】[0124]
【表7】 [Table 7]
【0125】[0125]
【表8】 [Table 8]
【0126】[0126]
【表9】 ○・・・画像流れがない良好な画像 △・・・7本/mmのラインは見えないが6本/mmの
ラインは見える程度で実用上問題のないレベル ×・・・5本/mmのラインが見えない程の画像流れが
発生[Table 9] ・ ・ ・: Good image with no image bleeding ラ イ ン: 7 lines / mm line is not visible, but 6 lines / mm line is visible and has no practical problem. Image flow occurs so that lines cannot be seen
【0127】[比較例2]実施例1と同様に、図2に記
載のプラズマCVD装置を用いて表1の条件で円筒状導
電性基体上に阻止層、光導電層を積層した後、表10の
条件で表面層を0.5μm堆積しD’〜F’の光受容部
材を製造した。さらに、7059ガラス基板上にも表1
0の条件でD’〜F’のa−SiC:H表面層サンプル
を作成し、実施例1と同様の方法によりD’〜F’の表
面層の炭素量及びダイナミック硬度を測定した。Comparative Example 2 In the same manner as in Example 1, a blocking layer and a photoconductive layer were laminated on a cylindrical conductive substrate under the conditions shown in Table 1 using the plasma CVD apparatus shown in FIG. Under conditions of 10, the surface layer was deposited to a thickness of 0.5 μm to produce light receiving members D ′ to F ′. Further, Table 1 is also shown on a 7059 glass substrate.
Under the condition of 0, samples of the a-SiC: H surface layer of D ′ to F ′ were prepared, and the carbon content and the dynamic hardness of the surface layer of D ′ to F ′ were measured in the same manner as in Example 1.
【0128】その結果、光受容部材D’〜F’の表面層
の炭素量及びダイナミック硬度は、表11に示した値で
あった。As a result, the carbon content and the dynamic hardness of the surface layers of the light receiving members D ′ to F ′ were as shown in Table 11.
【0129】次いで、この光受容部材D’〜F’をキャ
ノン製複写機NP−6085の改造機に搭載し、実施例
1と同様の条件で耐久評価を行った。ただし、光受容部
材の移動速度を400mm/secとしブレードは反発
弾性55%のものを使用した。この耐久後の表面層の摩
耗量を表11に示す。Next, the light receiving members D ′ to F ′ were mounted on a modified machine of a copying machine NP-6085 manufactured by Canon Inc., and the durability was evaluated under the same conditions as in Example 1. However, the moving speed of the light receiving member was 400 mm / sec, and the blade used had a rebound resilience of 55%. Table 11 shows the wear amount of the surface layer after the durability.
【0130】以上の評価で得られた結果を表12及び表
13に示す。Tables 12 and 13 show the results obtained by the above evaluation.
【0131】その結果、融着及び画像流れに関しては実
用上問題のないレベルであったが、10万枚耐久によっ
て摺擦傷及びムラ削れによるスジ状の画像欠陥が発生す
る場合があった。As a result, fusing and image bleeding were at levels where there was no problem in practical use. However, there were cases where 100,000 sheets were used, and scratches and stripe-like image defects due to uneven scraping were generated.
【0132】[0132]
【表10】 [Table 10]
【0133】[0133]
【表11】 [Table 11]
【0134】[0134]
【表12】 [Table 12]
【0135】[0135]
【表13】 ○・・・画像流れがない良好な画像 △・・・7本/mmのラインは見えないが6本/mmの
ラインは見える程度で実用上問題のないレベル ×・・・5本/mmのラインが見えない程の画像流れが
発生[Table 13] ・ ・ ・: Good image with no image bleeding ラ イ ン: 7 lines / mm line is not visible, but 6 lines / mm line is visible and has no practical problem. Image flow occurs so that lines cannot be seen
【0136】[実施例3]実施例1と同様の方法で、図
3に記載のプラズマCVD装置を用いて表14の条件で
円筒状導電性基体上に阻止層、光導電層を積層した後、
表15の条件で表面層を0.5μm堆積しG〜Iの光受
容部材を製造した。さらに、7059基板上にも表15
の条件でG〜Iのa−SiC:H表面層サンプルを作成
し、実施例1と同様の方法によりG〜Iの表面層の炭素
量及びダイナミック硬度を測定した。Example 3 In the same manner as in Example 1, after a blocking layer and a photoconductive layer were laminated on a cylindrical conductive substrate under the conditions shown in Table 14 using the plasma CVD apparatus shown in FIG. ,
Under the conditions shown in Table 15, a surface layer was deposited to a thickness of 0.5 μm to produce GI light-receiving members. Further, Table 15 is also provided on the 7059 substrate.
A-SiC: H surface layer samples of GI were prepared under the conditions described above, and the carbon content and dynamic hardness of the GI surface layers were measured in the same manner as in Example 1.
【0137】その結果、光受容部材G〜Iの表面層の炭
素量及びダイナミック硬度は、表16に示した値であっ
た。As a result, the carbon content and the dynamic hardness of the surface layers of the light receiving members GI were the values shown in Table 16.
【0138】次いで、この光受容部材G〜Iをキャノン
製複写機NP−6085の改造機に搭載し、実施例1と
同様の条件で耐久評価を行った。ただし、光受容部材の
移動速度を500mm/secとしブレードは反発弾性
30%のものを使用した。この耐久後の表面層の摩耗量
を表16に示す。Next, the light receiving members GI were mounted on a modified machine of a copying machine NP-6085 manufactured by Canon Inc., and the durability was evaluated under the same conditions as in Example 1. However, the moving speed of the light receiving member was 500 mm / sec, and the blade used had a rebound resilience of 30%. Table 16 shows the abrasion loss of the surface layer after the durability.
【0139】また、耐久後の表面を金属顕微鏡で観察し
た結果、球状突起の先端高さは何れも5μm以下であっ
た。さらに、ブレードエッジ部分を観察した結果、球状
突起が存在する部分に対応して若干の破損が認められた
がクリーニング不良が発生しない程度の軽微なものであ
った。When the surface after durability was observed with a metallographic microscope, the tip height of each of the spherical projections was 5 μm or less. Further, as a result of observing the blade edge portion, slight damage was recognized corresponding to the portion where the spherical projections were present, but the damage was slight enough that no cleaning failure occurred.
【0140】以上の評価で得られた結果を表21及び表
22に示す。Tables 21 and 22 show the results obtained by the above evaluation.
【0141】その結果、光受容部材G〜I何れの光受容
部材においても10万枚の耐久後でもムラ削れによって
発生するスジ状の画像欠陥は全くなく、クリーニング不
良や融着等の画像欠陥に関しても全く発生しなかった。
さらに、画像流れに関しても光受容部材の加温手段を設
けずとも、良好な画像特性が得られた。As a result, no streak-like image defect caused by uneven scraping was found in any of the light-receiving members G to I even after the 100,000-sheet durability, and image defects such as poor cleaning and fusion were observed. Did not occur at all.
Further, with respect to image deletion, good image characteristics were obtained without providing a heating means for the light receiving member.
【0142】[0142]
【表14】 [Table 14]
【0143】[0143]
【表15】 [Table 15]
【0144】[0144]
【表16】 [Table 16]
【0145】[比較例3]実施例1と同様に、図3に記
載のプラズマCVD装置を用いて表14の条件で円筒状
導電性基体上に阻止層、光導電層を積層した後、表17
の条件で表面層を0.5μm堆積しG’〜I’の光受容
部材を製造した。さらに、7059基板上にも表17の
条件でG’〜I’のa−SiC:H表面層サンプルを作
成し、実施例1と同様の方法によりG’〜I’の表面層
の炭素量及びダイナミック硬度を測定した。[Comparative Example 3] As in Example 1, a blocking layer and a photoconductive layer were laminated on a cylindrical conductive substrate under the conditions shown in Table 14 using the plasma CVD apparatus shown in FIG. 17
Under the conditions described above, a surface layer was deposited to a thickness of 0.5 μm to produce light receiving members G ′ to I ′. Further, a-SiC: H surface layer samples of G ′ to I ′ were prepared on the 7059 substrate under the conditions shown in Table 17, and the amount of carbon in the surface layers of G ′ to I ′ and The dynamic hardness was measured.
【0146】その結果、光受容部材G’〜I’の表面層
の炭素量及びダイナミック硬度は、表18に示した値で
あった。As a result, the carbon content and the dynamic hardness of the surface layers of the light receiving members G ′ to I ′ were as shown in Table 18.
【0147】次いで、この光受容部材G’〜I’をキャ
ノン製複写機NP−6085の改造機に搭載し、実施例
1と同様の条件で耐久評価を行った。ただし、光受容部
材の移動速度を500mm/secとしブレードは反発
弾性8%のものを使用した。この耐久後の表面層の摩耗
量を表18に示す。Next, the light receiving members G ′ to I ′ were mounted on a modified machine of a copying machine NP-6085 manufactured by Canon Inc., and the durability was evaluated under the same conditions as in Example 1. However, the moving speed of the light receiving member was 500 mm / sec, and the blade used had a rebound resilience of 8%. Table 18 shows the wear amount of the surface layer after the durability.
【0148】また、金属顕微鏡によってドラム表面の球
状突起を観察した結果、球状突起の頭部が削られずに初
期の状態を維持しているため球状突起を核に融着が発生
し、さらに、球状突起に対応するブレードエッジ部に破
損が観察された。Further, as a result of observing the spherical projections on the drum surface with a metallurgical microscope, the spherical projections were fused to the nuclei because the heads of the spherical projections were not shaved and the initial state was maintained. Breakage was observed at the blade edge corresponding to the protrusion.
【0149】以上の評価で得られた結果を表25及び表
26に示す。Tables 25 and 26 show the results obtained by the above evaluation.
【0150】その結果、摩耗量が1オングストローム/
1万枚よりも小さい値を示すa−SiC:H膜では、1
0万枚耐久によって融着、画像流れが発生する場合があ
ることが判明した。As a result, the amount of wear was 1 angstrom /
In an a-SiC: H film showing a value smaller than 10,000 sheets, 1
It has been found that fusing and image deletion may occur due to the endurance of 100,000 sheets.
【0151】[0151]
【表17】 [Table 17]
【0152】[0152]
【表18】 [Table 18]
【0153】[実施例4]実施例1と同様に、図3に記
載のプラズマCVD装置を用いて表14の条件で円筒状
導電性基体上に阻止層、光導電層を積層した後、表19
の条件で表面層を0.5μm堆積しJ〜Lの光受容部材
を製造した。さらに、7059ガラス基板上にも表19
の条件でJ〜Lのa−SiC:H表面層サンプルを作成
し、実施例1と同様の方法によりJ〜Lの表面層の炭素
量及びダイナミック硬度を測定した。Example 4 In the same manner as in Example 1, a blocking layer and a photoconductive layer were laminated on a cylindrical conductive substrate under the conditions shown in Table 14 using the plasma CVD apparatus shown in FIG. 19
Under the conditions described above, a surface layer was deposited to a thickness of 0.5 μm to produce light-receiving members J to L. Further, Table 19 is also provided on a 7059 glass substrate.
Under the conditions described above, J-L a-SiC: H surface layer samples were prepared, and the carbon content and dynamic hardness of the J-L surface layer were measured in the same manner as in Example 1.
【0154】その結果、光受容部材J〜Lの表面層の炭
素量及びダイナミック硬度は、表20に示した値であっ
た。As a result, the carbon content and the dynamic hardness of the surface layers of the light receiving members J to L were as shown in Table 20.
【0155】次いで、この光受容部材J〜Lをキヤノン
製複写機NP−6085の改造機に搭載し、実施例1と
同様の条件で耐久評価を行った。ただし、光受容部材の
移動速度を200mm/secとしブレードは反発弾性
50%のものを使用した。この耐久後の表面層の摩耗量
を表20に示す。Next, the light receiving members J to L were mounted on a modified copy machine NP-6085 manufactured by Canon Inc., and the durability was evaluated under the same conditions as in Example 1. However, the moving speed of the light receiving member was 200 mm / sec, and the blade used had a rebound resilience of 50%. Table 20 shows the abrasion loss of the surface layer after the durability.
【0156】また、耐久後の表面を金属顕微鏡で観察し
た結果、球状突起の先端高さは何れも5μm以下であっ
た。さらに、ブレードエッジ部分を観察した結果、球状
突起が存在する部分に対応して若干の破損が認められた
がクリーニング不良が発生しない程度の軽微なものであ
った。When the surface after durability was observed with a metallographic microscope, the tip height of each of the spherical projections was 5 μm or less. Further, as a result of observing the blade edge portion, slight damage was recognized corresponding to the portion where the spherical projections were present, but the damage was slight enough that no cleaning failure occurred.
【0157】以上の評価で得られた結果を表21及び表
22に示す。Tables 21 and 22 show the results obtained by the above evaluation.
【0158】その結果、光受容部材J〜L何れの光受容
部材においても10万枚の耐久後でもムラ削れによって
発生するスジ状の画像欠陥は全くなく、クリーニング不
良や融着等の画像欠陥に関しても全く発生しなかった。
さらに、画像流れに関しても光受容部材の加温手段を設
けずとも、良好な画像特性が得られた。As a result, none of the light receiving members J to L had any streak-like image defects caused by uneven shaving even after the durability of 100,000 sheets. Did not occur at all.
Further, with respect to image deletion, good image characteristics were obtained without providing a heating means for the light receiving member.
【0159】[0159]
【表19】 [Table 19]
【0160】[0160]
【表20】 [Table 20]
【0161】[0161]
【表21】 [Table 21]
【0162】[0162]
【表22】 ○・・・画像流れがない良好な画像 △・・・7本/mmのラインは見えないが6本/mmの
ラインは見える程度で実用上問題のないレベル ×・・・5本/mmのラインが見えない程の画像流れが
発生[Table 22] ・ ・ ・: Good image with no image bleeding ラ イ ン: 7 lines / mm line is not visible, but 6 lines / mm line is visible and has no practical problem. Image flow occurs so that lines cannot be seen
【0163】[比較例4]実施例1と同様に、図3に記
載のプラズマCVD装置を用いて表14の条件で円筒状
導電性基体上に阻止層、光導電層を積層した後、表23
の条件で表面層を0.5μm堆積しJ’〜L’の光受容
部材を製造した。さらに、7059基板上にも表23の
条件でJ’〜L’のa−SiC:H表面層サンプルを作
成し、実施例1と同様の方法によりJ’〜L’の表面層
の炭素量及びダイナミック硬度を測定した。[Comparative Example 4] In the same manner as in Example 1, a blocking layer and a photoconductive layer were laminated on a cylindrical conductive substrate using the plasma CVD apparatus shown in FIG. 23
Under the conditions described above, a surface layer was deposited to a thickness of 0.5 μm to produce light receiving members J ′ to L ′. Further, a-SiC: H surface layer samples of J ′ to L ′ were also prepared on the 7059 substrate under the conditions shown in Table 23, and the amount of carbon in the surface layers of J ′ to L ′ and The dynamic hardness was measured.
【0164】その結果、光受容部材J’〜L’の表面層
の炭素量及びダイナミック硬度は、表24に示した値で
あった。As a result, the carbon content and the dynamic hardness of the surface layers of the light receiving members J ′ to L ′ were as shown in Table 24.
【0165】次いで、この光受容部材J’〜L’をキャ
ノン製複写機NP−6085の改造機に搭載し、実施例
1と同様の条件で耐久評価を行った。ただし、光受容部
材の移動速度を200mm/secとしブレードは反発
弾性55%のものを使用した。この耐久後の表面層の摩
耗量を表24に示す。Next, the light receiving members J ′ to L ′ were mounted on a modified machine of a copying machine NP-6085 manufactured by Canon, and durability evaluation was performed under the same conditions as in Example 1. However, the moving speed of the light receiving member was 200 mm / sec, and the blade used had a rebound resilience of 55%. Table 24 shows the abrasion loss of the surface layer after the durability.
【0166】以上の評価で得られた結果を表25及び表
26に示す。Tables 25 and 26 show the results obtained by the above evaluation.
【0167】その結果、摩耗量が100オングストロー
ム/1万枚よりも大きい値を示すa−SiC:H膜で
は、10万枚耐久によって融着、さらに画像流れは実用
上問題のないレベルであったが、機械的強度は低くムラ
削れや、白スジ状の摺擦傷が画像欠陥として発生する場
合があった。As a result, in the a-SiC: H film showing the abrasion amount larger than 100 angstroms / 10,000 sheets, it was fused by the endurance of 100,000 sheets, and the image flow was at a level causing no practical problem. However, the mechanical strength was low, and uneven scraping and white streaks were sometimes found as image defects.
【0168】[0168]
【表23】 [Table 23]
【0169】[0169]
【表24】 [Table 24]
【0170】[0170]
【表25】 [Table 25]
【0171】[0171]
【表26】 ○・・・画像流れがない良好な画像 △・・・7本/mmのラインは見えないが6本/mmの
ラインは見える程度で実用上問題のないレベル ×・・・5本/mmのラインが見えない程の画像流れが
発生[Table 26] ・ ・ ・: Good image with no image bleeding ラ イ ン: 7 lines / mm line is not visible, but 6 lines / mm line is visible and has no practical problem. Image flow occurs so that lines cannot be seen
【0172】[0172]
【発明の効果】以上詳述したように本発明は、平均粒径
5〜8μmの現像剤を反発弾性10%以上50%以下の
弾性ゴムブレードでスクレープクリーニングする構成を
有する電子写真装置において、A4版の複写工程を転写
紙に行った後の摩耗量が1オングストローム/1万枚以
上100オングストローム/1万枚以下でありかつ、炭
素含有量が5%以上90%以下であり、さらにダイナミ
ック硬度が100〜950の範囲である非単結晶質炭素
化珪素膜で表面層を構成する光受容部材を用いることに
より、光受容部材表面に1〜50μmの高さの球状突起
が存在した場合においてもクリーニングブレードによっ
て該球状突起の頭部が選択的に研磨されるためブレード
の破損を防止することが可能となった。As described above in detail, the present invention relates to an electrophotographic apparatus having a construction in which a developer having an average particle size of 5 to 8 μm is scraped and cleaned with an elastic rubber blade having a rebound resilience of 10% to 50%. After the plate copying process is performed on the transfer paper, the amount of wear is 1 Å / 10,000 to 100 Å / 10,000 sheets, the carbon content is 5% to 90%, and the dynamic hardness is By using a light receiving member constituting a surface layer with a non-single crystalline silicon carbide film having a thickness in the range of 100 to 950, cleaning can be performed even when spherical protrusions having a height of 1 to 50 μm are present on the surface of the light receiving member. Since the head of the spherical projection is selectively polished by the blade, breakage of the blade can be prevented.
【0173】さらに、該表面層のクリーニングローラー
による摺擦手段を設けずとも、表面層を均一に摩耗する
ことが可能であり、ムラ削れにより発生する画像濃度ム
ラ及び現像剤の融着を防止することが可能になった。Further, the surface layer can be uniformly worn without providing a means for rubbing the surface layer with a cleaning roller, thereby preventing image density unevenness caused by uneven shaving and fusion of the developer. It became possible.
【0174】加えて、表面層を均一に1オングストロー
ム/1万枚以上100オングストローム/1万枚以下の
範囲で摩耗させることにより、如何なる環境下でも光受
容部材表面を直接加温する手段を設けずに、画像流れや
画像ボケといった画像欠陥を効果的に防止することが可
能である。In addition, by uniformly abrading the surface layer in the range of 1 Å / 10,000 to 100 Å / 10,000 sheets, no means for directly heating the surface of the light receiving member under any environment is provided. In addition, it is possible to effectively prevent image defects such as image deletion and image blur.
【0175】さらに、使用できる現像剤の種類及び電子
写真装置のコンパクト化、コストダウン等といった電子
写真装置設計のラチチュードを大幅に広げることが可能
となった。Further, the latitude of the design of the electrophotographic apparatus, such as the types of developers that can be used and the compactness and cost reduction of the electrophotographic apparatus, can be greatly expanded.
【0176】なお、本発明の主旨の範囲内で適宜、変化
組み合わせを行うことができ、上記した各実施例に限定
されないことはいうまでもない。Incidentally, it is needless to say that various combinations can be made within the scope of the gist of the present invention, and the present invention is not limited to the above embodiments.
【図1】図1(A),(B)は本発明による、光受容部
材の一例を示す模式的断面図ある。FIGS. 1A and 1B are schematic sectional views showing an example of a light receiving member according to the present invention.
【図2】本発明に適用可能なPCVD法により光受容部
材を製造するために用いられる堆積装置の一例を示す模
式的構成図である。FIG. 2 is a schematic configuration diagram showing an example of a deposition apparatus used for manufacturing a light receiving member by a PCVD method applicable to the present invention.
【図3】本発明に適用可能なPCVD法により光受容部
材を製造するために用いられる堆積装置の一例を示す模
式的構成図である。FIG. 3 is a schematic configuration diagram illustrating an example of a deposition apparatus used for manufacturing a light receiving member by a PCVD method applicable to the present invention.
【図4】電子写真装置の一例を説明する模式的断面図で
ある。FIG. 4 is a schematic sectional view illustrating an example of an electrophotographic apparatus.
101 導電性基体 102 電荷注入阻止層 103 光導電層 104 表面層 105 電荷発生層 106 電荷輸送層 2100,3100 堆積装置 2110,3110 反応容器 2111,3111 カソード電極 2112,3112 導電性基体 2113,3113 基体加熱用ヒーター 2114,3114 ガス導入管 2115,3115 高周波マッチングボックス 2116,3116 ガス配管 2117,3117 リークバルブ 2118,3118 メインバルブ 2119,3119 真空計 2120,3120 高周波電源 2121,3121 絶縁材料 3122 絶縁シールド板 2123,3123 受け台 2200,3200 ガス供給装置 2211〜2216,3211〜3216 マスフロ
ーコントローラー 2221〜2226,3221〜3226 ボンベ 2231〜2236,3231〜6236 バルブ 2241〜2246,3241〜3246 流入バル
ブ 2251〜2256,3251〜3256 流出バル
ブ 2260,3260 補助バルブ 2261〜2266,3261〜3266 圧力調整
器 401 光受容部材 402 主帯電器 403 静電潜像形成部位 404 現像器 405 転写紙供給系 406(a) 転写帯電器 406(b) 分離帯電器 407 クリーニングローラー 408 搬送系 409 除電光源 410 ハロゲンランプ 411 原稿台 412 原稿 413 ミラー 414 ミラー 415 ミラー 416 ミラー 417 レンズユニット 418 レンズ 419 給紙ガイド 420 ブランク露光LED 421 クリーニングブレード 422 レジスタローラー 423 面状ヒーター 424 定着器 425 クリーナーReference Signs List 101 conductive substrate 102 charge injection blocking layer 103 photoconductive layer 104 surface layer 105 charge generation layer 106 charge transport layer 2100, 3100 deposition device 2110, 3110 reaction vessel 2111, 3111 cathode electrode 2112, 3112 conductive substrate 2113, 3113 substrate heating Heater 2114, 3114 Gas inlet pipe 2115, 3115 High frequency matching box 2116, 3116 Gas pipe 2117, 3117 Leak valve 2118, 3118 Main valve 2119, 3119 Vacuum gauge 2120, 3120 High frequency power supply 2121, 3121 Insulating material 3122 Insulating shield plate 2123 3123 Receiver 2200, 3200 Gas supply device 2211-2216, 3211-216 Mass flow controller 2221-2226, 32 21-2226 Cylinders 2231-2236, 3231-6236 Valves 2241-2246, 3241-3246 Inflow valve 2251-2256, 3251-256 Outflow valve 2260, 3260 Auxiliary valve 2261-2266, 3261-3266 Pressure regulator 401 Light receiving member 402 Main charging device 403 Electrostatic latent image forming portion 404 Developing device 405 Transfer paper supply system 406 (a) Transfer charging device 406 (b) Separation charging device 407 Cleaning roller 408 Transport system 409 Static elimination light source 410 Halogen lamp 411 Document table 412 Document 413 Mirror 414 Mirror 415 Mirror 416 Mirror 417 Lens unit 418 Lens 419 Feed guide 420 Blank exposure LED 421 Cleaning blade 422 Register roller 42 3 Sheet heater 424 Fixer 425 Cleaner
───────────────────────────────────────────────────── フロントページの続き (72)発明者 青木 誠 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 Fターム(参考) 2H068 DA05 DA14 DA17 DA23 DA41 DA51 EA24 EA31 FA16 FA30 FC15 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Makoto Aoki 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term (reference) 2H068 DA05 DA14 DA17 DA23 DA41 DA51 EA24 EA31 FA16 FA30 FC15
Claims (8)
像、転写、クリーニングを順次繰り返す電子写真装置に
おいて、平均粒径5〜8μmの現像剤を該光受容部材に
現像、転写材へ転写し、現像剤が転写された後の光受容
部材表面を反発弾性10%以上50%以下の弾性ゴムブ
レートでスクレープクリーニングする電子写真装置でA
4版の複写工程を転写紙に行った後の摩耗量が1オング
ストローム/1万枚以上100オングストローム/1万
枚以下である、非単結晶質炭素化珪素膜で表面層を構成
した光受容部材を用いることを特徴とする電子写真装
置。1. An electrophotographic apparatus in which charging, exposure, development, transfer and cleaning are sequentially repeated on a light receiving member, wherein a developer having an average particle size of 5 to 8 μm is developed on the light receiving member and transferred to a transfer material. Then, the surface of the light receiving member after the developer is transferred is scraped and cleaned with an elastic rubber plate having a rebound resilience of 10% or more and 50% or less.
A photoreceptor member having a surface layer made of a non-single-crystal silicon carbonized film, which has a wear amount of 1 angstrom / 10,000 sheets or more and 100 angstrom / 10,000 sheets or less after a four-plate copying process is performed on transfer paper. An electrophotographic apparatus characterized by using:
ニングを順次繰り返す電子写真装置において、クリーニ
ングローラーによる摺擦クリーニング手段を設けずか
つ、光受容部材を直接加温する手段を設けない構成であ
る請求項1に記載の電子写真装置。2. An electrophotographic apparatus in which charging, exposure, development, transfer, and cleaning are sequentially repeated, in which a rubbing cleaning unit using a cleaning roller is not provided and a unit for directly heating a light receiving member is not provided. The electrophotographic apparatus according to claim 1.
コン原子を母体とする非単結晶材料で構成された光導電
層及び非単結晶材料で構成された表面層からなる光受容
部材である請求項1または2に記載の電子写真装置。3. The light-receiving member according to claim 1, wherein the light-receiving member comprises a photoconductive layer made of a non-single-crystal material mainly composed of silicon atoms and a surface layer made of a non-single-crystal material on a conductive substrate. The electrophotographic apparatus according to claim 1 or 2.
0〜950である請求項1乃至3のうち、いずれか1項
に記載の電子写真装置。4. The dynamic hardness of the surface layer is 10
The electrophotographic apparatus according to any one of claims 1 to 3, wherein the number is 0 to 950.
(C/Si+C)が5%〜90%である請求項1乃至4
のうち、いずれか1項に記載の電子写真装置。5. The non-single-crystal silicon carbide film has a carbon content (C / Si + C) of 5% to 90%.
13. The electrophotographic apparatus according to claim 1.
び、炭化水素系のガスを1〜450MHzの高周波を用
いたプラズマCVD法によって分解することによって堆
積成膜する請求項1乃至5のうち、いずれか1項に記載
の電子写真装置。6. The method according to claim 1, wherein the surface layer is formed by decomposing at least a silane-based gas and a hydrocarbon-based gas by a plasma CVD method using a high frequency of 1 to 450 MHz. The electrophotographic apparatus according to claim 1.
光導電層、表面層の3層で構成されている請求項1乃至
6のうち、いずれか1項に記載の電子写真装置。7. The light receiving member according to claim 7, wherein the light receiving member is a charge injection blocking layer,
The electrophotographic apparatus according to any one of claims 1 to 6, comprising three layers: a photoconductive layer and a surface layer.
発生層、表面層の3層で構成されている請求項1乃至7
のうち、いずれか1項に記載の電子写真装置。8. The light-receiving member according to claim 1, wherein the light-receiving member comprises three layers: a charge transport layer, a charge generation layer, and a surface layer.
13. The electrophotographic apparatus according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16534598A JP2000003055A (en) | 1998-06-12 | 1998-06-12 | Electrophotographic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16534598A JP2000003055A (en) | 1998-06-12 | 1998-06-12 | Electrophotographic device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000003055A true JP2000003055A (en) | 2000-01-07 |
Family
ID=15810591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16534598A Pending JP2000003055A (en) | 1998-06-12 | 1998-06-12 | Electrophotographic device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000003055A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007086366A (en) * | 2005-09-21 | 2007-04-05 | Fuji Xerox Co Ltd | Electrophotographic photoreceptor, process cartridge, and image forming apparatus |
JP2010049241A (en) * | 2008-07-25 | 2010-03-04 | Canon Inc | Electrophotographic photoreceptor and electrophotographic equipment |
WO2010074099A1 (en) * | 2008-12-26 | 2010-07-01 | Canon Kabushiki Kaisha | Image-forming method |
JP2013011916A (en) * | 2008-07-25 | 2013-01-17 | Canon Inc | Electrophotographic photoreceptor and electrophotographic apparatus |
US8440377B2 (en) | 2009-11-26 | 2013-05-14 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
US8445168B2 (en) | 2009-11-26 | 2013-05-21 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
US8455163B2 (en) | 2009-11-27 | 2013-06-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
US8465891B2 (en) | 2009-11-17 | 2013-06-18 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
US8507170B2 (en) | 2008-07-25 | 2013-08-13 | Canon Kabushiki Kaisha | Image-forming method and image-forming apparatus |
US8630558B2 (en) | 2009-11-25 | 2014-01-14 | Canon Kabushiki Kaisha | Electrophotographic apparatus having an electrophotgraphic photosensitive member with an amorphous silicon carbide surface layer |
-
1998
- 1998-06-12 JP JP16534598A patent/JP2000003055A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4600230B2 (en) * | 2005-09-21 | 2010-12-15 | 富士ゼロックス株式会社 | Electrophotographic photosensitive member, process cartridge, and image forming apparatus |
JP2007086366A (en) * | 2005-09-21 | 2007-04-05 | Fuji Xerox Co Ltd | Electrophotographic photoreceptor, process cartridge, and image forming apparatus |
US8263299B2 (en) | 2005-09-21 | 2012-09-11 | Fuji Xerox Co., Ltd. | Electrophotographic photoreceptor, process cartridge, and image forming apparatus |
JP2013011916A (en) * | 2008-07-25 | 2013-01-17 | Canon Inc | Electrophotographic photoreceptor and electrophotographic apparatus |
US8323862B2 (en) | 2008-07-25 | 2012-12-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
JP2010049241A (en) * | 2008-07-25 | 2010-03-04 | Canon Inc | Electrophotographic photoreceptor and electrophotographic equipment |
US8507170B2 (en) | 2008-07-25 | 2013-08-13 | Canon Kabushiki Kaisha | Image-forming method and image-forming apparatus |
US8685611B2 (en) | 2008-07-25 | 2014-04-01 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
WO2010074099A1 (en) * | 2008-12-26 | 2010-07-01 | Canon Kabushiki Kaisha | Image-forming method |
US8758971B2 (en) | 2008-12-26 | 2014-06-24 | Canon Kabushiki Kaisha | Image-forming method |
US8465891B2 (en) | 2009-11-17 | 2013-06-18 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
US8630558B2 (en) | 2009-11-25 | 2014-01-14 | Canon Kabushiki Kaisha | Electrophotographic apparatus having an electrophotgraphic photosensitive member with an amorphous silicon carbide surface layer |
US8440377B2 (en) | 2009-11-26 | 2013-05-14 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
US8445168B2 (en) | 2009-11-26 | 2013-05-21 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
US8455163B2 (en) | 2009-11-27 | 2013-06-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3507322B2 (en) | Electrophotographic equipment | |
JPH1083091A (en) | Electrophotographic photoreceptor and its production | |
JPH112912A (en) | Light receiving member, image forming device provided therewith and image forming method using it | |
JP2000003055A (en) | Electrophotographic device | |
JP3530676B2 (en) | Method for manufacturing light receiving member, light receiving member, electrophotographic apparatus having light receiving member, and electrophotographic process using light receiving member | |
US6055404A (en) | Cleaning device for electrophotographic apparatus, electrophotographic apparatus, method for cleaning light receiving member of electrophotographic apparatus, and electrophotographic process comprising the cleaning method | |
JP2004133397A (en) | Electrophotographic photoreceptor | |
EP0962838B1 (en) | Image-forming apparatus and image-forming method | |
JP3710304B2 (en) | Electrophotographic equipment | |
JP2001337474A (en) | Method for manufacturing light-accepting member, light- accepting member and electrophotographic device | |
JP3571917B2 (en) | Electrophotographic equipment | |
JP2000162800A (en) | Electrophotographic device | |
JPH11133641A (en) | Electrophotographic photoreceptor | |
JP2000162802A (en) | Electrophotographic device | |
JPH10288852A (en) | Electrophotographic photoreceptor | |
JP2000010313A (en) | Electrophotographic device | |
JPH11133640A (en) | Electrophotographic photoreceptor | |
JP3535664B2 (en) | Electrophotographic equipment | |
EP1004945B1 (en) | Electrophotographic apparatus and electrophotographic light receiving member | |
JPH11249523A (en) | Electrophotographic system | |
JPH11133638A (en) | Electrophotographic device | |
JP3647311B2 (en) | Electrophotographic apparatus cleaning apparatus, electrophotographic apparatus, photoreceptive member cleaning method of electrophotographic apparatus, and electrophotographic method having the cleaning method | |
JPH11249328A (en) | Light accepting member | |
JP2001330977A (en) | Electrophotographic device | |
JP2002139857A (en) | Electrophotographic photoreceptor, electrophotographic device and method for manufacturing electrophotogaphic photoreceptor |