KR890008922A
(en)
*
|
1987-11-21 |
1989-07-13 |
후세 노보루 |
Heat treatment device
|
USD423463S
(en)
*
|
1997-01-31 |
2000-04-25 |
Tokyo Electron Limited |
Quartz process tube
|
USD406113S
(en)
*
|
1997-01-31 |
1999-02-23 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus
|
USD424024S
(en)
*
|
1997-01-31 |
2000-05-02 |
Tokyo Electron Limited |
Quartz process tube
|
USD417438S
(en)
*
|
1997-01-31 |
1999-12-07 |
Tokyo Electron Limited |
Quartz outer tube
|
USD405429S
(en)
*
|
1997-01-31 |
1999-02-09 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus
|
USD405062S
(en)
*
|
1997-08-20 |
1999-02-02 |
Tokyo Electron Ltd. |
Processing tube for use in a semiconductor wafer heat processing apparatus
|
USD405431S
(en)
*
|
1997-08-20 |
1999-02-09 |
Tokyo Electron Ltd. |
Tube for use in a semiconductor wafer heat processing apparatus
|
US5948300A
(en)
*
|
1997-09-12 |
1999-09-07 |
Kokusai Bti Corporation |
Process tube with in-situ gas preheating
|
JP2000243747A
(en)
*
|
1999-02-18 |
2000-09-08 |
Kokusai Electric Co Ltd |
Substrate preparing apparatus
|
JP3985899B2
(en)
*
|
2002-03-28 |
2007-10-03 |
株式会社日立国際電気 |
Substrate processing equipment
|
JP5157100B2
(en)
*
|
2006-08-04 |
2013-03-06 |
東京エレクトロン株式会社 |
Film forming apparatus and film forming method
|
USD600659S1
(en)
*
|
2006-09-12 |
2009-09-22 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers
|
USD586768S1
(en)
*
|
2006-10-12 |
2009-02-17 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers
|
USD619630S1
(en)
*
|
2007-05-08 |
2010-07-13 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers
|
JP5096182B2
(en)
*
|
2008-01-31 |
2012-12-12 |
東京エレクトロン株式会社 |
Heat treatment furnace
|
USD611013S1
(en)
*
|
2008-03-28 |
2010-03-02 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers
|
JP4930438B2
(en)
*
|
2008-04-03 |
2012-05-16 |
東京エレクトロン株式会社 |
Reaction tube and heat treatment equipment
|
USD618638S1
(en)
*
|
2008-05-09 |
2010-06-29 |
Hitachi Kokusai Electric, Inc. |
Reaction tube
|
USD610559S1
(en)
*
|
2008-05-30 |
2010-02-23 |
Hitachi Kokusai Electric, Inc. |
Reaction tube
|
USD725053S1
(en)
*
|
2011-11-18 |
2015-03-24 |
Tokyo Electron Limited |
Outer tube for process tube for manufacturing semiconductor wafers
|
TWD167985S
(en)
*
|
2013-06-28 |
2015-05-21 |
日立國際電氣股份有限公司 |
part of reaction tube
|
TWD168774S
(en)
*
|
2013-06-28 |
2015-07-01 |
日立國際電氣股份有限公司 |
part of reaction tube
|
TWD167987S
(en)
*
|
2013-06-28 |
2015-05-21 |
日立國際電氣股份有限公司 |
part of reaction tube
|
USD739832S1
(en)
*
|
2013-06-28 |
2015-09-29 |
Hitachi Kokusai Electric Inc. |
Reaction tube
|
TWD167986S
(en)
*
|
2013-06-28 |
2015-05-21 |
日立國際電氣股份有限公司 |
part of reaction tube
|
JP1535455S
(en)
*
|
2015-02-25 |
2015-10-19 |
|
|
JP1546345S
(en)
*
|
2015-09-04 |
2016-03-22 |
|
|