ITUA20161691A1 - Metodo per la produzione di elettrodi per dispositivi elettrochimici - Google Patents

Metodo per la produzione di elettrodi per dispositivi elettrochimici

Info

Publication number
ITUA20161691A1
ITUA20161691A1 ITUA2016A001691A ITUA20161691A ITUA20161691A1 IT UA20161691 A1 ITUA20161691 A1 IT UA20161691A1 IT UA2016A001691 A ITUA2016A001691 A IT UA2016A001691A IT UA20161691 A ITUA20161691 A IT UA20161691A IT UA20161691 A1 ITUA20161691 A1 IT UA20161691A1
Authority
IT
Italy
Prior art keywords
electrodes
production
electrochemical devices
electrochemical
devices
Prior art date
Application number
ITUA2016A001691A
Other languages
English (en)
Inventor
Richard Noetzel
Stefano Sanguinetti
Original Assignee
Univ Degli Studi Di Milano Bicocca
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Degli Studi Di Milano Bicocca filed Critical Univ Degli Studi Di Milano Bicocca
Priority to ITUA2016A001691A priority Critical patent/ITUA20161691A1/it
Priority to EP17717085.9A priority patent/EP3430659B1/en
Priority to PCT/EP2017/056029 priority patent/WO2017157960A1/en
Priority to US16/085,731 priority patent/US10644303B2/en
Priority to CN201780015634.6A priority patent/CN109075312B/zh
Priority to ES17717085T priority patent/ES2784436T3/es
Publication of ITUA20161691A1 publication Critical patent/ITUA20161691A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/205—Light-sensitive devices comprising a semiconductor electrode comprising AIII-BV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
    • H01M4/88—Processes of manufacture
    • H01M4/8825—Methods for deposition of the catalytic active composition
    • H01M4/8867—Vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
    • H01M4/88—Processes of manufacture
    • H01M4/8878—Treatment steps after deposition of the catalytic active composition or after shaping of the electrode being free-standing body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Inert Electrodes (AREA)
ITUA2016A001691A 2016-03-15 2016-03-15 Metodo per la produzione di elettrodi per dispositivi elettrochimici ITUA20161691A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
ITUA2016A001691A ITUA20161691A1 (it) 2016-03-15 2016-03-15 Metodo per la produzione di elettrodi per dispositivi elettrochimici
EP17717085.9A EP3430659B1 (en) 2016-03-15 2017-03-14 Method for the fabrication of indium-gallium nitride electrodes for electrochemical devices
PCT/EP2017/056029 WO2017157960A1 (en) 2016-03-15 2017-03-14 Method for the fabrication of indium-gallium nitride electrodes for electrochemical devices
US16/085,731 US10644303B2 (en) 2016-03-15 2017-03-14 Method for the fabrication of indium-gallium nitride electrodes for electrochemical devices
CN201780015634.6A CN109075312B (zh) 2016-03-15 2017-03-14 用于电化学装置的铟镓氮化物电极的制造方法
ES17717085T ES2784436T3 (es) 2016-03-15 2017-03-14 Método para la fabricación de electrodos de nitruro de galio-indio para dispositivos electroquímicos

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUA2016A001691A ITUA20161691A1 (it) 2016-03-15 2016-03-15 Metodo per la produzione di elettrodi per dispositivi elettrochimici

Publications (1)

Publication Number Publication Date
ITUA20161691A1 true ITUA20161691A1 (it) 2017-09-15

Family

ID=56084221

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUA2016A001691A ITUA20161691A1 (it) 2016-03-15 2016-03-15 Metodo per la produzione di elettrodi per dispositivi elettrochimici

Country Status (6)

Country Link
US (1) US10644303B2 (it)
EP (1) EP3430659B1 (it)
CN (1) CN109075312B (it)
ES (1) ES2784436T3 (it)
IT (1) ITUA20161691A1 (it)
WO (1) WO2017157960A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110336028B (zh) * 2019-04-30 2021-03-30 中国科学院半导体研究所 电池负极材料及其制备方法、锂电池
CN111912886B (zh) * 2019-05-08 2022-01-11 华南师范大学 外延片及其制造方法以及电化学传感器
CN110707148B (zh) * 2019-09-02 2021-08-17 华南师范大学 外延晶片、外延晶片制造方法、二极管及整流器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319250A (ja) * 2003-04-16 2004-11-11 Nippon Telegr & Teleph Corp <Ntt> 燃料電池
JP2009019233A (ja) * 2007-07-11 2009-01-29 Mitsubishi Chemicals Corp 薄膜又は粉末製造方法、薄膜又は粉末製造装置、非水電解質二次電池用電極材の製造方法、非水電解質二次電池用電極及び非水電解質二次電池
US20150236374A1 (en) * 2013-08-29 2015-08-20 Panasonic Intellectual Property Management Co., Ltd. All-solid lithium secondary battery

Family Cites Families (4)

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JP3879173B2 (ja) * 1996-03-25 2007-02-07 住友電気工業株式会社 化合物半導体気相成長方法
CN1062917C (zh) * 1998-08-12 2001-03-07 北京大学 铟镓氮单晶薄膜金属有机物气相外延生长技术
WO2006135128A1 (en) * 2005-06-13 2006-12-21 Ki Yang Hwang Mass production method of nano silver, manufacturing method of germicide fiber coated with nano silver and its products
JP2007184252A (ja) * 2005-12-05 2007-07-19 Mitsubishi Chemicals Corp 非水電解質二次電池用電極材の製造方法、非水電解質二次電池用電極及びその製造方法、非水電解質二次電池用電極集電体の製造方法、並びに非水電解質二次電池

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319250A (ja) * 2003-04-16 2004-11-11 Nippon Telegr & Teleph Corp <Ntt> 燃料電池
JP2009019233A (ja) * 2007-07-11 2009-01-29 Mitsubishi Chemicals Corp 薄膜又は粉末製造方法、薄膜又は粉末製造装置、非水電解質二次電池用電極材の製造方法、非水電解質二次電池用電極及び非水電解質二次電池
US20150236374A1 (en) * 2013-08-29 2015-08-20 Panasonic Intellectual Property Management Co., Ltd. All-solid lithium secondary battery

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KIM Y H ET AL: "Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy", CHEMICAL PHYSICS LETTERS, ELSEVIER BV, NL, vol. 412, no. 4-6, 5 September 2005 (2005-09-05), pages 454 - 458, XP027647670, ISSN: 0009-2614, [retrieved on 20050905], DOI: 10.1016/J.CPLETT.2005.06.112 *
PAUL E.D. SOTO RODRIGUEZ ET AL: "Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)", ELECTROCHEMISTRY COMMUNICATIONS, vol. 60, 9 September 2015 (2015-09-09), NL, pages 158 - 162, XP055286402, ISSN: 1388-2481, DOI: 10.1016/j.elecom.2015.09.003 *

Also Published As

Publication number Publication date
WO2017157960A1 (en) 2017-09-21
ES2784436T3 (es) 2020-09-25
US20190109319A1 (en) 2019-04-11
EP3430659A1 (en) 2019-01-23
EP3430659B1 (en) 2020-01-08
US10644303B2 (en) 2020-05-05
CN109075312A (zh) 2018-12-21
CN109075312B (zh) 2022-08-05

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