ITTO20050478A1 - Procedimento per la realizzazione di cavita' sepolte all'interno di un corpo semiconduttore e corpo semiconduttore cosi' realizzato - Google Patents

Procedimento per la realizzazione di cavita' sepolte all'interno di un corpo semiconduttore e corpo semiconduttore cosi' realizzato

Info

Publication number
ITTO20050478A1
ITTO20050478A1 IT000478A ITTO20050478A ITTO20050478A1 IT TO20050478 A1 ITTO20050478 A1 IT TO20050478A1 IT 000478 A IT000478 A IT 000478A IT TO20050478 A ITTO20050478 A IT TO20050478A IT TO20050478 A1 ITTO20050478 A1 IT TO20050478A1
Authority
IT
Italy
Prior art keywords
semiconductor body
buried
cavities
realization
procedure
Prior art date
Application number
IT000478A
Other languages
English (en)
Inventor
Gabriele Barlocchi
Pietro Corona
Dino Faralli
Flavio Francesco Villa
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT000478A priority Critical patent/ITTO20050478A1/it
Priority to US11/486,387 priority patent/US7811848B2/en
Publication of ITTO20050478A1 publication Critical patent/ITTO20050478A1/it
Priority to US12/873,685 priority patent/US8420428B2/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
    • B01L2200/12—Specific details about manufacturing devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/06—Auxiliary integrated devices, integrated components
    • B01L2300/0627—Sensor or part of a sensor is integrated
    • B01L2300/0636—Integrated biosensor, microarrays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/06—Auxiliary integrated devices, integrated components
    • B01L2300/0627—Sensor or part of a sensor is integrated
    • B01L2300/0645—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/08—Geometry, shape and general structure
    • B01L2300/0809—Geometry, shape and general structure rectangular shaped
    • B01L2300/0816—Cards, e.g. flat sample carriers usually with flow in two horizontal directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/18—Means for temperature control
    • B01L2300/1805—Conductive heating, heat from thermostatted solids is conducted to receptacles, e.g. heating plates, blocks
    • B01L2300/1827—Conductive heating, heat from thermostatted solids is conducted to receptacles, e.g. heating plates, blocks using resistive heater
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L7/00—Heating or cooling apparatus; Heat insulating devices
    • B01L7/52—Heating or cooling apparatus; Heat insulating devices with provision for submitting samples to a predetermined sequence of different temperatures, e.g. for treating nucleic acid samples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0116—Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Dispersion Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Hematology (AREA)
  • Clinical Laboratory Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
IT000478A 2005-07-12 2005-07-12 Procedimento per la realizzazione di cavita' sepolte all'interno di un corpo semiconduttore e corpo semiconduttore cosi' realizzato ITTO20050478A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT000478A ITTO20050478A1 (it) 2005-07-12 2005-07-12 Procedimento per la realizzazione di cavita' sepolte all'interno di un corpo semiconduttore e corpo semiconduttore cosi' realizzato
US11/486,387 US7811848B2 (en) 2005-07-12 2006-07-12 Method for forming buried cavities within a semiconductor body, and semiconductor body thus made
US12/873,685 US8420428B2 (en) 2005-07-12 2010-09-01 Method for forming buried cavities within a semiconductor body, and semiconductor body thus made

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000478A ITTO20050478A1 (it) 2005-07-12 2005-07-12 Procedimento per la realizzazione di cavita' sepolte all'interno di un corpo semiconduttore e corpo semiconduttore cosi' realizzato

Publications (1)

Publication Number Publication Date
ITTO20050478A1 true ITTO20050478A1 (it) 2007-01-13

Family

ID=37854247

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000478A ITTO20050478A1 (it) 2005-07-12 2005-07-12 Procedimento per la realizzazione di cavita' sepolte all'interno di un corpo semiconduttore e corpo semiconduttore cosi' realizzato

Country Status (2)

Country Link
US (2) US7811848B2 (it)
IT (1) ITTO20050478A1 (it)

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EP1577656B1 (en) 2004-03-19 2010-06-09 STMicroelectronics Srl Method for manufacturing a semiconductor pressure sensor
ITTO20050478A1 (it) * 2005-07-12 2007-01-13 St Microelectronics Srl Procedimento per la realizzazione di cavita' sepolte all'interno di un corpo semiconduttore e corpo semiconduttore cosi' realizzato
ITMI20080532A1 (it) * 2008-03-28 2009-09-29 St Microelectronics Srl Metodo di fabbricazione di un sensore di gas integrato su substrato semiconduttore
US8751172B2 (en) * 2009-06-29 2014-06-10 Rochester Institute Of Technology Microelectromechanical viscosity measurement devices and methods thereof
US8727504B2 (en) 2011-11-11 2014-05-20 Stmicroelectronics, Inc. Microfluidic jetting device with piezoelectric actuator and method for making the same
US8956325B2 (en) 2011-12-07 2015-02-17 Stmicroelectronics, Inc. Piezoelectric microfluidic pumping device and method for using the same
ITTO20130502A1 (it) 2013-06-18 2014-12-19 St Microelectronics Asia Dispositivo elettronico con sensore di temperatura integrato e relativo metodo di fabbricazione
ITUB20155716A1 (it) 2015-11-19 2017-05-19 St Microelectronics Srl Dispositivo micro-elettro-meccanico dotato di due cavita' sepolte e relativo procedimento di fabbricazione
DE102017101672B4 (de) 2017-01-27 2021-02-25 Infineon Technologies Austria Ag Verfahren zum Herstellen einer Isolationsstruktur mit einer gasgefüllten Kavität und Halbleiterbauelement
US10365564B2 (en) 2017-08-09 2019-07-30 Saudi Arabian Oil Company Calcite channel nanofluidics
US10170304B1 (en) 2017-10-25 2019-01-01 Globalfoundries Inc. Self-aligned nanotube structures
US10676347B2 (en) 2018-01-09 2020-06-09 Stmicroelectronics S.R.L. Micro-electro-mechanical device having two buried cavities and manufacturing process thereof
US10782196B2 (en) 2018-02-19 2020-09-22 Stmicroelectronics S.R.L. Strain gauge with mechanically decoupled temperature sensor
US10466126B2 (en) * 2018-02-27 2019-11-05 Globalfoundries Inc. MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)
US10761428B2 (en) 2018-08-28 2020-09-01 Saudi Arabian Oil Company Fabricating calcite nanofluidic channels
US11865581B2 (en) 2018-11-21 2024-01-09 Stmicroelectronics S.R.L. Ultrasonic MEMS acoustic transducer with reduced stress sensitivity and manufacturing process thereof
US10926227B2 (en) 2018-12-03 2021-02-23 Saudi Arabian Oil Company Fabricating calcite nanofluidic channels
IT201900005808A1 (it) 2019-04-15 2020-10-15 St Microelectronics Srl Dispositivo mems a micropompa per la movimentazione o eiezione di un fluido, in particolare microsoffiante o flussimetro
US11300554B2 (en) 2020-01-14 2022-04-12 Saudi Arabian Oil Company Calcite channel structures with heterogeneous wettability
US11454097B2 (en) 2021-01-04 2022-09-27 Saudi Arabian Oil Company Artificial rain to enhance hydrocarbon recovery
CN113479841B (zh) * 2021-05-24 2024-05-28 中国电子科技集团公司第五十五研究所 一种硅基微流道基板制备方法
US11961702B2 (en) 2021-12-09 2024-04-16 Saudi Arabian Oil Company Fabrication of in situ HR-LCTEM nanofluidic cell for nanobubble interactions during EOR processes in carbonate rocks
US11787993B1 (en) 2022-03-28 2023-10-17 Saudi Arabian Oil Company In-situ foamed gel for lost circulation
US11913319B2 (en) 2022-06-21 2024-02-27 Saudi Arabian Oil Company Sandstone stimulation
US12281996B2 (en) 2022-06-22 2025-04-22 Globalfoundries U.S. Inc. Semiconductor structure including photodiode-based fluid sensor and methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3762136B2 (ja) * 1998-04-24 2006-04-05 株式会社東芝 半導体装置
DE69930099T2 (de) * 1999-04-09 2006-08-31 Stmicroelectronics S.R.L., Agrate Brianza Herstellung von vergrabenen Hohlräumen in einer einkristallinen Halbleiterscheibe und Halbleiterscheibe
US7294536B2 (en) * 2000-07-25 2007-11-13 Stmicroelectronics S.R.L. Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
EP1324382B1 (en) 2001-12-28 2007-03-07 STMicroelectronics S.r.l. Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
US7069952B1 (en) * 2001-11-14 2006-07-04 Caliper Life Sciences, Inc. Microfluidic devices and methods of their manufacture
EP1427010B1 (en) * 2002-11-29 2012-01-11 STMicroelectronics Srl Manufacturing method of a semiconductor substrate comprising at least a buried cavity
ITTO20050478A1 (it) * 2005-07-12 2007-01-13 St Microelectronics Srl Procedimento per la realizzazione di cavita' sepolte all'interno di un corpo semiconduttore e corpo semiconduttore cosi' realizzato

Also Published As

Publication number Publication date
US20100330721A1 (en) 2010-12-30
US20070057355A1 (en) 2007-03-15
US8420428B2 (en) 2013-04-16
US7811848B2 (en) 2010-10-12

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