ITMI20111445A1 - Transistor organico elettroluminescente a doppio gate - Google Patents
Transistor organico elettroluminescente a doppio gate Download PDFInfo
- Publication number
- ITMI20111445A1 ITMI20111445A1 IT001445A ITMI20111445A ITMI20111445A1 IT MI20111445 A1 ITMI20111445 A1 IT MI20111445A1 IT 001445 A IT001445 A IT 001445A IT MI20111445 A ITMI20111445 A IT MI20111445A IT MI20111445 A1 ITMI20111445 A1 IT MI20111445A1
- Authority
- IT
- Italy
- Prior art keywords
- layer
- semiconductor material
- thickness
- semiconductor
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT001445A ITMI20111445A1 (it) | 2011-07-29 | 2011-07-29 | Transistor organico elettroluminescente a doppio gate |
| KR1020147005277A KR101820786B1 (ko) | 2011-07-29 | 2012-07-26 | 일렉트로루미네선트 유기 이중 게이트 트랜지스터 |
| US14/233,865 US20140374708A1 (en) | 2011-07-29 | 2012-07-26 | Electroluminescent organic double gate transistor |
| CN201280038511.1A CN103782408B (zh) | 2011-07-29 | 2012-07-26 | 电致发光有机双栅晶体管 |
| JP2014522201A JP5872038B2 (ja) | 2011-07-29 | 2012-07-26 | 電界発光有機二重ゲートトランジスタ |
| EP12759234.3A EP2737559B1 (en) | 2011-07-29 | 2012-07-26 | Electroluminescent organic double gate transistor |
| PCT/IB2012/053814 WO2013017999A1 (en) | 2011-07-29 | 2012-07-26 | Electroluminescent organic double gate transistor |
| US14/827,116 US9343707B2 (en) | 2011-07-29 | 2015-08-14 | Electroluminescent organic double gate transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT001445A ITMI20111445A1 (it) | 2011-07-29 | 2011-07-29 | Transistor organico elettroluminescente a doppio gate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITMI20111445A1 true ITMI20111445A1 (it) | 2013-01-30 |
Family
ID=44545837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT001445A ITMI20111445A1 (it) | 2011-07-29 | 2011-07-29 | Transistor organico elettroluminescente a doppio gate |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20140374708A1 (https=) |
| EP (1) | EP2737559B1 (https=) |
| JP (1) | JP5872038B2 (https=) |
| KR (1) | KR101820786B1 (https=) |
| CN (1) | CN103782408B (https=) |
| IT (1) | ITMI20111445A1 (https=) |
| WO (1) | WO2013017999A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2911214B1 (en) * | 2014-02-20 | 2018-08-08 | Amorosi, Antonio | Multilayer structure of an OLET transistor |
| EP2960280A1 (en) | 2014-06-26 | 2015-12-30 | E.T.C. S.r.l. | Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices |
| EP2978035A1 (en) * | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| EP2978037A1 (en) | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| EP2978038A1 (en) | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| CN111146352B (zh) * | 2014-07-24 | 2022-10-21 | 飞利斯有限公司 | 有机电致发光晶体管 |
| EP3021373A1 (en) | 2014-11-14 | 2016-05-18 | E.T.C. S.r.l. | Display containing improved pixel architectures |
| WO2016100983A1 (en) | 2014-12-19 | 2016-06-23 | Polyera Corporation | Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices |
| JP6546400B2 (ja) * | 2015-02-05 | 2019-07-17 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN116096118A (zh) | 2021-11-03 | 2023-05-09 | 京东方科技集团股份有限公司 | 发光器件及其控制方法、发光基板 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202006003360U1 (de) * | 2006-03-03 | 2006-06-01 | Schön, Hendrik | Lichtemittierender Feldeffekttransistor |
| US20090008628A1 (en) * | 2007-07-04 | 2009-01-08 | Samsung Electronics Co., Ltd. | Light-emitting device and light-receiving device using transistor structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0407739D0 (en) * | 2004-04-05 | 2004-05-12 | Univ Cambridge Tech | Dual-gate transistors |
| JP4408903B2 (ja) * | 2007-01-24 | 2010-02-03 | セイコーエプソン株式会社 | トランジスタ、トランジスタ回路、電気光学装置および電子機器 |
| EP2340576A2 (en) * | 2008-10-29 | 2011-07-06 | Koninklijke Philips Electronics N.V. | Dual gate field-effect transistor and method of producing a dual gate field-effect transistor |
| WO2010068619A1 (en) * | 2008-12-08 | 2010-06-17 | The Trustees Of The University Of Pennsylvania | Organic semiconductors capable of ambipolar transport |
| ITMI20111446A1 (it) * | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
-
2011
- 2011-07-29 IT IT001445A patent/ITMI20111445A1/it unknown
-
2012
- 2012-07-26 KR KR1020147005277A patent/KR101820786B1/ko not_active Expired - Fee Related
- 2012-07-26 CN CN201280038511.1A patent/CN103782408B/zh not_active Expired - Fee Related
- 2012-07-26 EP EP12759234.3A patent/EP2737559B1/en not_active Not-in-force
- 2012-07-26 WO PCT/IB2012/053814 patent/WO2013017999A1/en not_active Ceased
- 2012-07-26 US US14/233,865 patent/US20140374708A1/en not_active Abandoned
- 2012-07-26 JP JP2014522201A patent/JP5872038B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202006003360U1 (de) * | 2006-03-03 | 2006-06-01 | Schön, Hendrik | Lichtemittierender Feldeffekttransistor |
| US20090008628A1 (en) * | 2007-07-04 | 2009-01-08 | Samsung Electronics Co., Ltd. | Light-emitting device and light-receiving device using transistor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140056303A (ko) | 2014-05-09 |
| KR101820786B1 (ko) | 2018-01-22 |
| JP2014522113A (ja) | 2014-08-28 |
| WO2013017999A1 (en) | 2013-02-07 |
| CN103782408A (zh) | 2014-05-07 |
| EP2737559A1 (en) | 2014-06-04 |
| JP5872038B2 (ja) | 2016-03-01 |
| EP2737559B1 (en) | 2015-01-21 |
| CN103782408B (zh) | 2016-08-31 |
| US20140374708A1 (en) | 2014-12-25 |
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