ITMI20052309A1 - Procedimento per la formazione di uno strato cristallino su un substrato di silicio - Google Patents
Procedimento per la formazione di uno strato cristallino su un substrato di silicioInfo
- Publication number
- ITMI20052309A1 ITMI20052309A1 ITMI20052309A ITMI20052309A1 IT MI20052309 A1 ITMI20052309 A1 IT MI20052309A1 IT MI20052309 A ITMI20052309 A IT MI20052309A IT MI20052309 A1 ITMI20052309 A1 IT MI20052309A1
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- formation
- silicon substrate
- crystalline layer
- crystalline
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200410059651 DE102004059651A1 (de) | 2004-12-10 | 2004-12-10 | Verfahren zur Bildung einer kristallinen Schicht auf einem Silizium-Substrat |
Publications (1)
Publication Number | Publication Date |
---|---|
ITMI20052309A1 true ITMI20052309A1 (it) | 2006-06-11 |
Family
ID=36498675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI20052309 ITMI20052309A1 (it) | 2004-12-10 | 2005-12-02 | Procedimento per la formazione di uno strato cristallino su un substrato di silicio |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102004059651A1 (it) |
FR (1) | FR2879346A1 (it) |
IT (1) | ITMI20052309A1 (it) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG67458A1 (en) * | 1996-12-18 | 1999-09-21 | Canon Kk | Process for producing semiconductor article |
US6344375B1 (en) * | 1998-07-28 | 2002-02-05 | Matsushita Electric Industrial Co., Ltd | Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the same |
-
2004
- 2004-12-10 DE DE200410059651 patent/DE102004059651A1/de not_active Ceased
-
2005
- 2005-12-02 IT ITMI20052309 patent/ITMI20052309A1/it unknown
- 2005-12-08 FR FR0553768A patent/FR2879346A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2879346A1 (fr) | 2006-06-16 |
DE102004059651A1 (de) | 2006-06-14 |
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