IT989842B - Procedimento per la fabbricazione di corpi di substrati monocristal lini per la produzione di disposi tivi elettronici a semiconduttori - Google Patents

Procedimento per la fabbricazione di corpi di substrati monocristal lini per la produzione di disposi tivi elettronici a semiconduttori

Info

Publication number
IT989842B
IT989842B IT51410/73A IT5141073A IT989842B IT 989842 B IT989842 B IT 989842B IT 51410/73 A IT51410/73 A IT 51410/73A IT 5141073 A IT5141073 A IT 5141073A IT 989842 B IT989842 B IT 989842B
Authority
IT
Italy
Prior art keywords
monocristal
substrates
bodies
procedure
manufacture
Prior art date
Application number
IT51410/73A
Other languages
English (en)
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT989842B publication Critical patent/IT989842B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
IT51410/73A 1972-07-14 1973-07-11 Procedimento per la fabbricazione di corpi di substrati monocristal lini per la produzione di disposi tivi elettronici a semiconduttori IT989842B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7209744A NL7209744A (OSRAM) 1972-07-14 1972-07-14

Publications (1)

Publication Number Publication Date
IT989842B true IT989842B (it) 1975-06-10

Family

ID=19816516

Family Applications (1)

Application Number Title Priority Date Filing Date
IT51410/73A IT989842B (it) 1972-07-14 1973-07-11 Procedimento per la fabbricazione di corpi di substrati monocristal lini per la produzione di disposi tivi elettronici a semiconduttori

Country Status (8)

Country Link
JP (1) JPS4964576A (OSRAM)
CA (1) CA1018439A (OSRAM)
DE (1) DE2332036C3 (OSRAM)
FR (1) FR2192869B1 (OSRAM)
GB (1) GB1432686A (OSRAM)
IT (1) IT989842B (OSRAM)
NL (1) NL7209744A (OSRAM)
SE (1) SE7608675L (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4310612C1 (de) * 1993-03-31 1994-11-10 Max Planck Gesellschaft Flüssigphasen-Heteroepitaxieverfahren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE754519A (fr) * 1969-08-06 1971-02-08 Motorola Inc Procede et appareil pour la croissance de couches epitaxiales en phase liquide sur des semi-conducteurs

Also Published As

Publication number Publication date
SE7608675L (sv) 1976-08-02
FR2192869B1 (OSRAM) 1977-05-13
CA1018439A (en) 1977-10-04
DE2332036C3 (de) 1980-07-03
JPS4964576A (OSRAM) 1974-06-22
DE2332036B2 (de) 1978-09-07
GB1432686A (en) 1976-04-22
DE2332036A1 (de) 1974-01-31
NL7209744A (OSRAM) 1974-01-16
FR2192869A1 (OSRAM) 1974-02-15

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