IT987426B - PERFECTED PROCEDURE FOR THE MANUFACTURE OF SEMI-CONDUCTIVE DEVICES - Google Patents
PERFECTED PROCEDURE FOR THE MANUFACTURE OF SEMI-CONDUCTIVE DEVICESInfo
- Publication number
- IT987426B IT987426B IT24074/73A IT2407473A IT987426B IT 987426 B IT987426 B IT 987426B IT 24074/73 A IT24074/73 A IT 24074/73A IT 2407473 A IT2407473 A IT 2407473A IT 987426 B IT987426 B IT 987426B
- Authority
- IT
- Italy
- Prior art keywords
- semi
- manufacture
- conductive devices
- perfected procedure
- perfected
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26777172A | 1972-06-30 | 1972-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT987426B true IT987426B (en) | 1975-02-20 |
Family
ID=23020055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT24074/73A IT987426B (en) | 1972-06-30 | 1973-05-15 | PERFECTED PROCEDURE FOR THE MANUFACTURE OF SEMI-CONDUCTIVE DEVICES |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS528229B2 (en) |
CA (1) | CA1005925A (en) |
DE (1) | DE2318912A1 (en) |
FR (1) | FR2191270B1 (en) |
GB (1) | GB1422586A (en) |
IT (1) | IT987426B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2554450A1 (en) * | 1975-12-03 | 1977-06-16 | Siemens Ag | Integrated circuit prodn. with FET in silicon substrate - with polycrystalline silicon gate electrode and planar insulating oxide film |
DE2720533A1 (en) * | 1977-05-06 | 1978-11-09 | Siemens Ag | MONOLITHIC INTEGRATED CIRCUIT ARRANGEMENT WITH SINGLE TRANSISTOR STORAGE ELEMENTS |
CA1186808A (en) * | 1981-11-06 | 1985-05-07 | Sidney I. Soclof | Method of fabrication of dielectrically isolated cmos device with an isolated slot |
JPS58100441A (en) * | 1981-12-10 | 1983-06-15 | Toshiba Corp | Manufacture of semiconductor device |
JPS58212165A (en) * | 1983-05-23 | 1983-12-09 | Nec Corp | Semiconductor device |
JPH0616549B2 (en) * | 1984-04-17 | 1994-03-02 | 三菱電機株式会社 | Semiconductor integrated circuit device |
JP2003124514A (en) * | 2001-10-17 | 2003-04-25 | Sony Corp | Semiconductor light emitting element and its manufacturing method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL153374B (en) * | 1966-10-05 | 1977-05-16 | Philips Nv | PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE PROVIDED WITH AN OXIDE LAYER AND SEMI-CONDUCTOR DEVICE MANUFACTURED ACCORDING TO THE PROCEDURE. |
FR2080849A6 (en) * | 1970-02-06 | 1971-11-26 | Radiotechnique Compelec | |
US3698966A (en) * | 1970-02-26 | 1972-10-17 | North American Rockwell | Processes using a masking layer for producing field effect devices having oxide isolation |
US3859717A (en) * | 1970-12-21 | 1975-01-14 | Rockwell International Corp | Method of manufacturing control electrodes for charge coupled circuits and the like |
US3751722A (en) * | 1971-04-30 | 1973-08-07 | Standard Microsyst Smc | Mos integrated circuit with substrate containing selectively formed resistivity regions |
-
1973
- 1973-04-14 DE DE2318912A patent/DE2318912A1/en not_active Ceased
- 1973-05-15 IT IT24074/73A patent/IT987426B/en active
- 1973-05-18 JP JP48054847A patent/JPS528229B2/ja not_active Expired
- 1973-06-01 GB GB2620873A patent/GB1422586A/en not_active Expired
- 1973-06-04 CA CA173,051A patent/CA1005925A/en not_active Expired
- 1973-06-06 FR FR7321783A patent/FR2191270B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS528229B2 (en) | 1977-03-08 |
GB1422586A (en) | 1976-01-28 |
FR2191270A1 (en) | 1974-02-01 |
JPS4945688A (en) | 1974-05-01 |
FR2191270B1 (en) | 1977-07-29 |
CA1005925A (en) | 1977-02-22 |
DE2318912A1 (en) | 1974-01-17 |
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