IT981611B - Elemento di memorizzazione non volatile - Google Patents

Elemento di memorizzazione non volatile

Info

Publication number
IT981611B
IT981611B IT22098/73A IT2209873A IT981611B IT 981611 B IT981611 B IT 981611B IT 22098/73 A IT22098/73 A IT 22098/73A IT 2209873 A IT2209873 A IT 2209873A IT 981611 B IT981611 B IT 981611B
Authority
IT
Italy
Prior art keywords
storage element
volatile storage
volatile
storage
Prior art date
Application number
IT22098/73A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT981611B publication Critical patent/IT981611B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
IT22098/73A 1972-06-21 1973-03-26 Elemento di memorizzazione non volatile IT981611B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26510372A 1972-06-21 1972-06-21

Publications (1)

Publication Number Publication Date
IT981611B true IT981611B (it) 1974-10-10

Family

ID=23009011

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22098/73A IT981611B (it) 1972-06-21 1973-03-26 Elemento di memorizzazione non volatile

Country Status (7)

Country Link
US (1) US3769559A (it)
JP (1) JPS5314428B2 (it)
CA (1) CA1023856A (it)
DE (1) DE2322198A1 (it)
FR (1) FR2197238B1 (it)
GB (1) GB1421817A (it)
IT (1) IT981611B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606781A (en) * 1984-10-18 1986-08-19 Motorola, Inc. Method for resistor trimming by metal migration
JPS63299956A (ja) * 1987-05-30 1988-12-07 Tokyo Electric Co Ltd ラインプリンタ付電子キャッシュレジスタ
KR100657944B1 (ko) * 2005-01-12 2006-12-14 삼성전자주식회사 상전이 램 동작 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519999A (en) * 1964-11-20 1970-07-07 Ibm Thin polymeric film memory device
US3324531A (en) * 1965-03-29 1967-06-13 Gen Electric Solid state electronic devices, method and apparatus
US3480843A (en) * 1967-04-18 1969-11-25 Gen Electric Thin-film storage diode with tellurium counterelectrode
DE2023219C3 (de) * 1970-05-12 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Programmierbarer Halbleiter-Festwertspeicher

Also Published As

Publication number Publication date
JPS4958791A (it) 1974-06-07
JPS5314428B2 (it) 1978-05-17
FR2197238B1 (it) 1977-07-29
US3769559A (en) 1973-10-30
FR2197238A1 (it) 1974-03-22
CA1023856A (en) 1978-01-03
GB1421817A (en) 1976-01-21
DE2322198A1 (de) 1974-01-17

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