IT944100B - Spinello accresciuto secondo il metodo czochralski e metodo di preparazione dello stesso da mas se fuse non stechiometriche - Google Patents

Spinello accresciuto secondo il metodo czochralski e metodo di preparazione dello stesso da mas se fuse non stechiometriche

Info

Publication number
IT944100B
IT944100B IT32578/71A IT3257871A IT944100B IT 944100 B IT944100 B IT 944100B IT 32578/71 A IT32578/71 A IT 32578/71A IT 3257871 A IT3257871 A IT 3257871A IT 944100 B IT944100 B IT 944100B
Authority
IT
Italy
Prior art keywords
spinello
stechiometric
mas
preparation
same
Prior art date
Application number
IT32578/71A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT944100B publication Critical patent/IT944100B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT32578/71A 1971-03-19 1971-12-17 Spinello accresciuto secondo il metodo czochralski e metodo di preparazione dello stesso da mas se fuse non stechiometriche IT944100B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12611371A 1971-03-19 1971-03-19

Publications (1)

Publication Number Publication Date
IT944100B true IT944100B (it) 1973-04-20

Family

ID=22423055

Family Applications (1)

Application Number Title Priority Date Filing Date
IT32578/71A IT944100B (it) 1971-03-19 1971-12-17 Spinello accresciuto secondo il metodo czochralski e metodo di preparazione dello stesso da mas se fuse non stechiometriche

Country Status (10)

Country Link
US (1) US3736158A (it)
AU (1) AU461195B2 (it)
BE (1) BE776423A (it)
CA (1) CA956214A (it)
DE (1) DE2162897A1 (it)
FR (1) FR2129338A5 (it)
GB (1) GB1370790A (it)
IT (1) IT944100B (it)
NL (1) NL7116731A (it)
YU (1) YU34261B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
NL7606482A (nl) * 1976-06-16 1977-12-20 Philips Nv Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm.
US4370739A (en) * 1980-06-09 1983-01-25 Rca Corporation Spinel video disc playback stylus
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
WO2005031047A1 (en) * 2003-09-23 2005-04-07 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US7919815B1 (en) * 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
JP5346189B2 (ja) * 2007-08-27 2013-11-20 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 多結晶性モノリシックアルミン酸マグネシウムスピネル
DE102011080378A1 (de) 2011-08-03 2013-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transparente Komposit-Scheibe für Sicherheitsanwendungen
CN103864452B (zh) * 2012-12-10 2015-10-21 富泰华精密电子（郑州）有限公司 面板及其制造方法

Also Published As

Publication number Publication date
AU3685971A (en) 1973-06-21
YU34261B (en) 1979-04-30
CA956214A (en) 1974-10-15
US3736158A (en) 1973-05-29
GB1370790A (en) 1974-10-16
FR2129338A5 (it) 1972-10-27
AU461195B2 (en) 1975-05-22
BE776423A (fr) 1972-04-04
DE2162897A1 (de) 1972-09-28
NL7116731A (it) 1972-09-21
YU315071A (en) 1978-10-31

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