BE776423A - Spinelle ameliore ayant cru par la methode czochralski et procede de preparation de celui-ci a partir de masses fondues non stoechiometriques - Google Patents

Spinelle ameliore ayant cru par la methode czochralski et procede de preparation de celui-ci a partir de masses fondues non stoechiometriques

Info

Publication number
BE776423A
BE776423A BE776423A BE776423A BE776423A BE 776423 A BE776423 A BE 776423A BE 776423 A BE776423 A BE 776423A BE 776423 A BE776423 A BE 776423A BE 776423 A BE776423 A BE 776423A
Authority
BE
Belgium
Prior art keywords
stoechiometric
melts
grown
preparation
same
Prior art date
Application number
BE776423A
Other languages
English (en)
Inventor
G W Cullen
S R Bolin
A D Morrison
C C Wang
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE776423A publication Critical patent/BE776423A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE776423A 1971-03-19 1971-12-08 Spinelle ameliore ayant cru par la methode czochralski et procede de preparation de celui-ci a partir de masses fondues non stoechiometriques BE776423A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12611371A 1971-03-19 1971-03-19

Publications (1)

Publication Number Publication Date
BE776423A true BE776423A (fr) 1972-04-04

Family

ID=22423055

Family Applications (1)

Application Number Title Priority Date Filing Date
BE776423A BE776423A (fr) 1971-03-19 1971-12-08 Spinelle ameliore ayant cru par la methode czochralski et procede de preparation de celui-ci a partir de masses fondues non stoechiometriques

Country Status (10)

Country Link
US (1) US3736158A (fr)
AU (1) AU461195B2 (fr)
BE (1) BE776423A (fr)
CA (1) CA956214A (fr)
DE (1) DE2162897A1 (fr)
FR (1) FR2129338A5 (fr)
GB (1) GB1370790A (fr)
IT (1) IT944100B (fr)
NL (1) NL7116731A (fr)
YU (1) YU34261B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
NL7606482A (nl) * 1976-06-16 1977-12-20 Philips Nv Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm.
US4370739A (en) * 1980-06-09 1983-01-25 Rca Corporation Spinel video disc playback stylus
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
RU2336372C2 (ru) * 2003-09-23 2008-10-20 Сэнт-Гобэн Керамикс Энд Пластикс, Инк. Изделия из шпинели
US7919815B1 (en) * 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
JP5346189B2 (ja) 2007-08-27 2013-11-20 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 多結晶性モノリシックアルミン酸マグネシウムスピネル
DE102011080378A1 (de) * 2011-08-03 2013-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transparente Komposit-Scheibe für Sicherheitsanwendungen
CN103864452B (zh) * 2012-12-10 2015-10-21 富泰华精密电子（郑州）有限公司 面板及其制造方法

Also Published As

Publication number Publication date
FR2129338A5 (fr) 1972-10-27
YU315071A (en) 1978-10-31
AU461195B2 (en) 1975-05-22
YU34261B (en) 1979-04-30
IT944100B (it) 1973-04-20
NL7116731A (fr) 1972-09-21
US3736158A (en) 1973-05-29
CA956214A (en) 1974-10-15
GB1370790A (en) 1974-10-16
DE2162897A1 (de) 1972-09-28
AU3685971A (en) 1973-06-21

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