IT943233B - Procedimento per fissare un corpo semiconduttore su un sopporto me diante saldatura - Google Patents

Procedimento per fissare un corpo semiconduttore su un sopporto me diante saldatura

Info

Publication number
IT943233B
IT943233B IT71052/71A IT7105271A IT943233B IT 943233 B IT943233 B IT 943233B IT 71052/71 A IT71052/71 A IT 71052/71A IT 7105271 A IT7105271 A IT 7105271A IT 943233 B IT943233 B IT 943233B
Authority
IT
Italy
Prior art keywords
diante
welding
procedure
fixing
support
Prior art date
Application number
IT71052/71A
Other languages
English (en)
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT943233B publication Critical patent/IT943233B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
IT71052/71A 1970-12-15 1971-12-11 Procedimento per fissare un corpo semiconduttore su un sopporto me diante saldatura IT943233B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5943670 1970-12-15

Publications (1)

Publication Number Publication Date
IT943233B true IT943233B (it) 1973-04-02

Family

ID=10483762

Family Applications (1)

Application Number Title Priority Date Filing Date
IT71052/71A IT943233B (it) 1970-12-15 1971-12-11 Procedimento per fissare un corpo semiconduttore su un sopporto me diante saldatura

Country Status (5)

Country Link
US (1) US3786556A (OSRAM)
JP (1) JPS5013630B1 (OSRAM)
FR (1) FR2118101B1 (OSRAM)
GB (1) GB1331980A (OSRAM)
IT (1) IT943233B (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979659A (en) * 1975-01-30 1976-09-07 Texas Instruments Incorporated Automotive alternator rectifier bridges
JPS51123149A (en) * 1975-04-19 1976-10-27 Nitto Kogaku Kk Zoom lens used for close photography
FR2431900A1 (fr) * 1978-07-25 1980-02-22 Thomson Csf Systeme de soudure d'un laser a semiconducteur sur un socle metallique
US4463892A (en) * 1980-02-28 1984-08-07 Burroughs Corporation Method for manufacturing IC packages
NL8501153A (nl) * 1985-04-22 1986-11-17 Philips Nv Halfgeleiderinrichting.
US4603805A (en) * 1985-05-20 1986-08-05 Motorola, Inc. Method for enhancing the solderability of nickel layers
IT1223044B (it) * 1987-11-03 1990-09-12 Italtel Spa Procedimento per la saldatura di un componente a semiconduttore ad un elemento di supporto
JPH03120789A (ja) * 1989-10-03 1991-05-22 Mitsubishi Electric Corp プリント配線板への電子部品取付法
WO2002058876A1 (de) * 2001-01-26 2002-08-01 Robert Bosch Gmbh Verfahren zur herstellung einer verbindung, vorrichtung und leistungshalbleiterbauelement
JP2003334680A (ja) * 2002-05-22 2003-11-25 Suzuki Motor Corp 溶接方法及びこれを用いて接合された構造体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3060553A (en) * 1955-12-07 1962-10-30 Motorola Inc Method for making semiconductor device
US3204327A (en) * 1957-10-28 1965-09-07 Motorola Inc Method for making semiconductor devices employing a hollow, slotted cylindrical jig and vertical mounting posts
GB851544A (en) * 1957-10-28 1960-10-19 English Electric Valve Co Ltd Improvements in or relating to semi-conductor devices
US3217213A (en) * 1961-06-02 1965-11-09 Slater Electric Inc Semiconductor diode construction with heat dissipating housing
US3411193A (en) * 1965-08-31 1968-11-19 Marshall Ind Terminal leads for electrical devices
GB1084028A (en) * 1965-11-29 1967-09-20 Standard Telephones Cables Ltd A method of soldering a semiconductor chip to a backing plate
US3512051A (en) * 1965-12-29 1970-05-12 Burroughs Corp Contacts for a semiconductor device
FR1519854A (fr) * 1967-02-23 1968-04-05 Radiotechnique Coprim Rtc Embase composite, notamment pour dispositif semi-conducteur

Also Published As

Publication number Publication date
DE2161945A1 (de) 1972-07-13
JPS5013630B1 (OSRAM) 1975-05-21
FR2118101A1 (OSRAM) 1972-07-28
US3786556A (en) 1974-01-22
GB1331980A (en) 1973-09-26
DE2161945B2 (de) 1975-08-28
FR2118101B1 (OSRAM) 1976-06-04

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