IT941270B - Procedimento per fabbricare contat ti metallo semiconduttore - Google Patents

Procedimento per fabbricare contat ti metallo semiconduttore

Info

Publication number
IT941270B
IT941270B IT31535/71A IT3153571A IT941270B IT 941270 B IT941270 B IT 941270B IT 31535/71 A IT31535/71 A IT 31535/71A IT 3153571 A IT3153571 A IT 3153571A IT 941270 B IT941270 B IT 941270B
Authority
IT
Italy
Prior art keywords
procedure
manufacturing semiconductor
metal contacts
semiconductor metal
contacts
Prior art date
Application number
IT31535/71A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19702058554 external-priority patent/DE2058554C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT941270B publication Critical patent/IT941270B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
IT31535/71A 1970-11-27 1971-11-24 Procedimento per fabbricare contat ti metallo semiconduttore IT941270B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702058554 DE2058554C3 (de) 1970-11-27 Verfahren zur Herstellung von Chrom-Halbleiterkontakten

Publications (1)

Publication Number Publication Date
IT941270B true IT941270B (it) 1973-03-01

Family

ID=5789336

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31535/71A IT941270B (it) 1970-11-27 1971-11-24 Procedimento per fabbricare contat ti metallo semiconduttore

Country Status (8)

Country Link
US (1) US3813762A (enExample)
BE (1) BE775909A (enExample)
CA (1) CA926522A (enExample)
FR (1) FR2115330B1 (enExample)
GB (1) GB1348811A (enExample)
IT (1) IT941270B (enExample)
LU (1) LU64341A1 (enExample)
NL (1) NL7116388A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
TW294831B (enExample) * 1995-04-26 1997-01-01 Handotai Energy Kenkyusho Kk
JPH10163468A (ja) * 1996-12-03 1998-06-19 Kagaku Gijutsu Shinko Jigyodan 膜状複合構造体
GB0013473D0 (en) * 2000-06-03 2000-07-26 Univ Liverpool A method of electronic component fabrication and an electronic component
RU207357U1 (ru) * 2021-06-09 2021-10-25 Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") Диод Шоттки

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3012920A (en) * 1959-01-05 1961-12-12 Bell Telephone Labor Inc Process of selective etching with resist preparation
US3642528A (en) * 1968-06-05 1972-02-15 Matsushita Electronics Corp Semiconductor device and method of making same
US3599323A (en) * 1968-11-25 1971-08-17 Sprague Electric Co Hot carrier diode having low turn-on voltage

Also Published As

Publication number Publication date
DE2058554B2 (de) 1976-03-25
US3813762A (en) 1974-06-04
BE775909A (fr) 1972-03-16
LU64341A1 (enExample) 1972-06-19
FR2115330B1 (enExample) 1977-04-22
DE2058554A1 (de) 1972-06-29
FR2115330A1 (enExample) 1972-07-07
NL7116388A (enExample) 1972-05-30
CA926522A (en) 1973-05-15
GB1348811A (en) 1974-03-27

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