IT8947928A0 - Metodo per passivare a strati gradati fotorivelatori infrarossi del gruppo ii-vi - Google Patents

Metodo per passivare a strati gradati fotorivelatori infrarossi del gruppo ii-vi

Info

Publication number
IT8947928A0
IT8947928A0 IT8947928A IT4792889A IT8947928A0 IT 8947928 A0 IT8947928 A0 IT 8947928A0 IT 8947928 A IT8947928 A IT 8947928A IT 4792889 A IT4792889 A IT 4792889A IT 8947928 A0 IT8947928 A0 IT 8947928A0
Authority
IT
Italy
Prior art keywords
graded layers
infrared photodetectors
passivating group
passivating
group
Prior art date
Application number
IT8947928A
Other languages
English (en)
Inventor
Charles A Cockrum
David R Rhiger
Eric F Schulte
Original Assignee
Santa Barbara Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center
Publication of IT8947928A0 publication Critical patent/IT8947928A0/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
IT8947928A 1988-05-11 1989-05-08 Metodo per passivare a strati gradati fotorivelatori infrarossi del gruppo ii-vi IT8947928A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/193,029 US5880510A (en) 1988-05-11 1988-05-11 Graded layer passivation of group II-VI infrared photodetectors

Publications (1)

Publication Number Publication Date
IT8947928A0 true IT8947928A0 (it) 1989-05-08

Family

ID=22712000

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8947928A IT8947928A0 (it) 1988-05-11 1989-05-08 Metodo per passivare a strati gradati fotorivelatori infrarossi del gruppo ii-vi

Country Status (6)

Country Link
US (1) US5880510A (it)
DE (1) DE3915321C1 (it)
FR (1) FR2872345B1 (it)
GB (1) GB2372375B (it)
IT (1) IT8947928A0 (it)
NL (1) NL195050C (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030001167A1 (en) * 2001-06-08 2003-01-02 Zarlink Semiconductor Ab Optical detector with integrated filter
US6803557B1 (en) * 2002-09-27 2004-10-12 Raytheon Company Photodiode having voltage tunable spectral response
US7456384B2 (en) * 2004-12-10 2008-11-25 Sony Corporation Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor
US7368762B2 (en) * 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode
JP2009538536A (ja) 2006-05-26 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 固体発光デバイス、および、それを製造する方法
JP4396684B2 (ja) * 2006-10-04 2010-01-13 ソニー株式会社 固体撮像装置の製造方法
US20090001491A1 (en) * 2006-10-30 2009-01-01 Biomimetics Technologies Inc Method for producing a microchip that is able to detect infrared light with a semiconductor at room temperature
US7638811B2 (en) * 2007-03-13 2009-12-29 Cree, Inc. Graded dielectric layer
US7755023B1 (en) * 2007-10-09 2010-07-13 Hrl Laboratories, Llc Electronically tunable and reconfigurable hyperspectral photon detector
US8178863B2 (en) * 2009-06-01 2012-05-15 Teledyne Scientific & Imaging, Llc Lateral collection architecture for SLS detectors
US8835998B2 (en) * 2009-12-14 2014-09-16 University Of Notre Dame Du Lac Compositionally graded heterojunction semiconductor device and method of making same
FR2983351B1 (fr) * 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR3020176B1 (fr) 2014-04-22 2017-09-29 Commissariat Energie Atomique Matrice de photodiodes en cdhgte
JP6265032B2 (ja) * 2014-04-28 2018-01-24 住友電気工業株式会社 半導体受光素子
FR3021807B1 (fr) * 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
FR3023976B1 (fr) 2014-07-16 2017-11-17 Commissariat Energie Atomique Matrice de photodiodes cdhgte a faible bruit
FR3042310B1 (fr) * 2015-10-12 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium
RU2611211C1 (ru) * 2015-11-20 2017-02-21 Акционерное общество "НПО "Орион" Способ пассивации поверхности теллурида кадмия-ртути
FR3044468B1 (fr) * 2015-11-27 2018-07-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de photo-detection a revetement comportant des tranchees a revetement de grande bande interdite et procede de fabrication
WO2019126463A1 (en) * 2017-12-22 2019-06-27 First Solar, Inc. Absorber layers with mercury for photovoltaic devices and methods for forming the same
US20230395735A1 (en) * 2020-10-23 2023-12-07 National Research Council Of Canada Semiconductor devices with graded interface regions

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DE1496588A1 (de) * 1963-05-06 1969-06-19 Philips Nv Traeger fuer Halbleiterschichten
FR2168934B1 (it) * 1972-01-27 1977-04-01 Telecommunications Sa
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
US4197553A (en) * 1976-09-07 1980-04-08 Hughes Aircraft Company Monolithic extrinsic silicon infrared detector structure employing multi-epitaxial layers
GB1568958A (en) * 1976-10-22 1980-06-11 Mullard Ltd Methods of manufacturing infra-red sensitive devices
US4275407A (en) * 1977-09-01 1981-06-23 Honeywell Inc. Durable insulating protective layer for hybrid CCD/mosaic IR detector array
US4286278A (en) * 1977-09-01 1981-08-25 Honeywell Inc. Hybrid mosaic IR/CCD focal plane
US4206470A (en) * 1977-09-01 1980-06-03 Honeywell Inc. Thin film interconnect for multicolor IR/CCD
US4196508A (en) * 1977-09-01 1980-04-08 Honeywell Inc. Durable insulating protective layer for hybrid CCD/mosaic IR detector array
US4137625A (en) * 1977-09-01 1979-02-06 Honeywell Inc. Thin film interconnect for multicolor IR/CCD
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
DE3033457C2 (de) * 1980-09-05 1986-05-15 N.V. Philips' Gloeilampenfabrieken, Eindhoven Verfahren zur Herstellung einer einen PN-Übergang aufweisenden Infrarot-Detektoranordnung
EP0068652B1 (en) * 1981-06-24 1988-05-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Photo diodes
EP0162367B2 (de) * 1984-05-19 1993-08-04 Rieter Ingolstadt Spinnereimaschinenbau AG Verfahren und Vorrichtung zum Vorbereiten eines abgelängten Fadenendes zum Wiederanspinnen einer Offenend-Spinnvorichtung
US4588446A (en) * 1985-02-21 1986-05-13 Texas Instruments Incorporated Method for producing graded band gap mercury cadmium telluride
US4736104A (en) * 1986-02-07 1988-04-05 Texas Instruments Incorporated Selenidization passivation
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array
US4956304A (en) * 1988-04-07 1990-09-11 Santa Barbara Research Center Buried junction infrared photodetector process

Also Published As

Publication number Publication date
NL8901178A (nl) 2001-06-01
GB2372375B (en) 2003-01-15
NL195050C (nl) 2003-06-27
GB8910337D0 (en) 2002-05-22
DE3915321C1 (de) 2000-12-28
GB2372375A (en) 2002-08-21
US5880510A (en) 1999-03-09
FR2872345A1 (fr) 2005-12-30
FR2872345B1 (fr) 2007-07-13

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