IT8921582A0 - Sistema per controllare velocita' di crescita epitassiale in reattori verticali muniti di suscettore troncopiramidale. - Google Patents
Sistema per controllare velocita' di crescita epitassiale in reattori verticali muniti di suscettore troncopiramidale.Info
- Publication number
- IT8921582A0 IT8921582A0 IT8921582A IT2158289A IT8921582A0 IT 8921582 A0 IT8921582 A0 IT 8921582A0 IT 8921582 A IT8921582 A IT 8921582A IT 2158289 A IT2158289 A IT 2158289A IT 8921582 A0 IT8921582 A0 IT 8921582A0
- Authority
- IT
- Italy
- Prior art keywords
- truncopyramidal
- susceptor
- epitaxial growth
- growth speed
- reactors equipped
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8921582A IT1231547B (it) | 1989-08-31 | 1989-08-31 | Sistema per controllare velocita' di crescita epitassiale in reattori verticali muniti di suscettore troncopiramidale |
EP90115689A EP0415191A1 (en) | 1989-08-31 | 1990-08-21 | System for controlling epitaxial grow rate in vertical provided with a frustum pyramid susceptor |
JP2228482A JP3058434B2 (ja) | 1989-08-31 | 1990-08-31 | 截頭角錐体状サセプタを備えた垂直反応器内のエピタキシャル成長速度制御系 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8921582A IT1231547B (it) | 1989-08-31 | 1989-08-31 | Sistema per controllare velocita' di crescita epitassiale in reattori verticali muniti di suscettore troncopiramidale |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8921582A0 true IT8921582A0 (it) | 1989-08-31 |
IT1231547B IT1231547B (it) | 1991-12-17 |
Family
ID=11183924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8921582A IT1231547B (it) | 1989-08-31 | 1989-08-31 | Sistema per controllare velocita' di crescita epitassiale in reattori verticali muniti di suscettore troncopiramidale |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0415191A1 (it) |
JP (1) | JP3058434B2 (it) |
IT (1) | IT1231547B (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1312150B1 (it) | 1999-03-25 | 2002-04-09 | Lpe Spa | Perfezionata camera di reazione per reattore epitassiale |
ITMI20011881A1 (it) * | 2001-09-07 | 2003-03-07 | L P E S P A | Suscettori dotato di dispositivi di controllo della crescita epitassiale e reattore epitassiale che utilizza lo stesso |
US20130239894A1 (en) * | 2012-03-19 | 2013-09-19 | Pinecone Material Inc. | Chemical vapor deposition apparatus |
CN106906455A (zh) * | 2017-03-30 | 2017-06-30 | 河北普兴电子科技股份有限公司 | 硅外延反应腔用梯形基座 |
CN114086157B (zh) * | 2021-09-30 | 2023-12-22 | 华灿光电(浙江)有限公司 | 锥形结构的石墨基板 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4322592A (en) * | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
US4496828A (en) * | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
US4638762A (en) * | 1985-08-30 | 1987-01-27 | At&T Technologies, Inc. | Chemical vapor deposition method and apparatus |
NL8602357A (nl) * | 1985-10-07 | 1987-05-04 | Epsilon Ltd Partnership | Inrichting en werkwijze voor het chemisch uit damp neerslaan met gebruik van een axiaal symmetrische gasstroming. |
JPH01125923A (ja) * | 1987-11-11 | 1989-05-18 | Sumitomo Chem Co Ltd | 気相成長装置 |
-
1989
- 1989-08-31 IT IT8921582A patent/IT1231547B/it active
-
1990
- 1990-08-21 EP EP90115689A patent/EP0415191A1/en not_active Withdrawn
- 1990-08-31 JP JP2228482A patent/JP3058434B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03116928A (ja) | 1991-05-17 |
EP0415191A1 (en) | 1991-03-06 |
JP3058434B2 (ja) | 2000-07-04 |
IT1231547B (it) | 1991-12-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970825 |