IT8921402A0 - Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella. - Google Patents

Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella.

Info

Publication number
IT8921402A0
IT8921402A0 IT8921402A IT2140289A IT8921402A0 IT 8921402 A0 IT8921402 A0 IT 8921402A0 IT 8921402 A IT8921402 A IT 8921402A IT 2140289 A IT2140289 A IT 2140289A IT 8921402 A0 IT8921402 A0 IT 8921402A0
Authority
IT
Italy
Prior art keywords
cell
errors due
eeprom memory
improved protection
memory cell
Prior art date
Application number
IT8921402A
Other languages
English (en)
Other versions
IT1230363B (it
Inventor
Carlo Riva
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8921402A priority Critical patent/IT1230363B/it
Publication of IT8921402A0 publication Critical patent/IT8921402A0/it
Priority to DE69018893T priority patent/DE69018893T2/de
Priority to US07/549,763 priority patent/US5107461A/en
Priority to EP90113062A priority patent/EP0411347B1/en
Priority to JP2203755A priority patent/JPH0383297A/ja
Application granted granted Critical
Publication of IT1230363B publication Critical patent/IT1230363B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/74—Masking faults in memories by using spares or by reconfiguring using duplex memories, i.e. using dual copies
IT8921402A 1989-08-01 1989-08-01 Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella. IT1230363B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8921402A IT1230363B (it) 1989-08-01 1989-08-01 Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella.
DE69018893T DE69018893T2 (de) 1989-08-01 1990-07-09 EEPROM-Speicherzelle mit verbessertem Schutz gegen Fehler aufgrund von Zelldurchbruch.
US07/549,763 US5107461A (en) 1989-08-01 1990-07-09 Eeprom memory cell with improved protection against errors due to cell breakdown
EP90113062A EP0411347B1 (en) 1989-08-01 1990-07-09 Eeprom memory cell with improved protection against errors due to cell breakdown
JP2203755A JPH0383297A (ja) 1989-08-01 1990-07-31 ブレークダウンによるエラーを防御したｅｅｐｒｏｍメモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8921402A IT1230363B (it) 1989-08-01 1989-08-01 Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella.

Publications (2)

Publication Number Publication Date
IT8921402A0 true IT8921402A0 (it) 1989-08-01
IT1230363B IT1230363B (it) 1991-10-18

Family

ID=11181245

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8921402A IT1230363B (it) 1989-08-01 1989-08-01 Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella.

Country Status (5)

Country Link
US (1) US5107461A (it)
EP (1) EP0411347B1 (it)
JP (1) JPH0383297A (it)
DE (1) DE69018893T2 (it)
IT (1) IT1230363B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024993A (en) * 1990-05-02 1991-06-18 Microelectronics & Computer Technology Corporation Superconducting-semiconducting circuits, devices and systems
US5617352A (en) * 1995-12-13 1997-04-01 The United States Of America As Represented By The Secretary Of The Navy Non-volatile, bidirectional, electrically programmable integrated memory element implemented using double polysilicon
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
US6515912B1 (en) * 2000-04-14 2003-02-04 Koninklijke Philips Electronics N.V. Semiconductor device
JP4281331B2 (ja) 2002-01-21 2009-06-17 株式会社デンソー 不揮発性半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593037A (en) * 1970-03-13 1971-07-13 Intel Corp Cell for mos random-acess integrated circuit memory
US3691537A (en) * 1971-05-26 1972-09-12 Gen Electric High speed signal in mos circuits by voltage variable capacitor
IT1198109B (it) * 1986-11-18 1988-12-21 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel
JPH0640589B2 (ja) * 1987-03-16 1994-05-25 株式会社東芝 不揮発性半導体記憶装置
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.
JPS6432494A (en) * 1987-07-27 1989-02-02 Mitsubishi Electric Corp Non-volatile semiconductor storage device
US4888735A (en) * 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
FR2626401B1 (fr) * 1988-01-26 1990-05-18 Sgs Thomson Microelectronics Memoire eeprom a grille flottante avec transistor de selection de ligne de source
US4961002A (en) * 1989-07-13 1990-10-02 Intel Corporation Synapse cell employing dual gate transistor structure

Also Published As

Publication number Publication date
US5107461A (en) 1992-04-21
DE69018893T2 (de) 1995-12-21
EP0411347A2 (en) 1991-02-06
EP0411347B1 (en) 1995-04-26
DE69018893D1 (de) 1995-06-01
IT1230363B (it) 1991-10-18
EP0411347A3 (en) 1992-03-11
JPH0383297A (ja) 1991-04-09

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970829