IT8224911A0 - Procedimento per produrre un tetrodo semiconduttore e tetrodo semiconduttore con esso ottenuto. - Google Patents
Procedimento per produrre un tetrodo semiconduttore e tetrodo semiconduttore con esso ottenuto.Info
- Publication number
- IT8224911A0 IT8224911A0 IT8224911A IT2491182A IT8224911A0 IT 8224911 A0 IT8224911 A0 IT 8224911A0 IT 8224911 A IT8224911 A IT 8224911A IT 2491182 A IT2491182 A IT 2491182A IT 8224911 A0 IT8224911 A0 IT 8224911A0
- Authority
- IT
- Italy
- Prior art keywords
- tetrode
- semiconductor
- semiconductor tetrode
- procedure
- producing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| HU813926A HU183760B (en) | 1981-12-23 | 1981-12-23 | Method and arrangement for shaping semiconductor tetrode |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT8224911A0 true IT8224911A0 (it) | 1982-12-22 |
| IT8224911A1 IT8224911A1 (it) | 1984-06-22 |
| IT1153688B IT1153688B (it) | 1987-01-14 |
Family
ID=10966096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24911/82A IT1153688B (it) | 1981-12-23 | 1982-12-22 | Procedimento per produrre un tetrodo semiconduttore e tetrodo semiconduttore con esso ottenuto |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0096686A4 (it) |
| JP (1) | JPS58502175A (it) |
| HU (1) | HU183760B (it) |
| IT (1) | IT1153688B (it) |
| WO (1) | WO1983002369A1 (it) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58103169A (ja) * | 1981-12-15 | 1983-06-20 | Matsushita Electric Ind Co Ltd | 半導体可変抵抗素子 |
| US5717241A (en) * | 1993-12-09 | 1998-02-10 | Northern Telecom Limited | Gate controlled lateral bipolar junction transistor |
| TWI427660B (zh) * | 2011-06-16 | 2014-02-21 | Univ Nat Ilan | 高纏繞密度之四聯電極製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3271640A (en) * | 1962-10-11 | 1966-09-06 | Fairchild Camera Instr Co | Semiconductor tetrode |
| US3445734A (en) * | 1965-12-22 | 1969-05-20 | Ibm | Single diffused surface transistor and method of making same |
| US3836998A (en) * | 1969-01-16 | 1974-09-17 | Signetics Corp | High voltage bipolar semiconductor device and integrated circuit using the same and method |
| US3663869A (en) * | 1971-01-26 | 1972-05-16 | Westinghouse Electric Corp | Bipolar-unipolar transistor structure |
| GB1318856A (en) * | 1971-03-18 | 1973-05-31 | Ferranti Ltd | Semiconductor devices |
| US4167425A (en) * | 1975-09-19 | 1979-09-11 | Siemens Aktiengesellschaft | Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment |
| US4097888A (en) * | 1975-10-15 | 1978-06-27 | Signetics Corporation | High density collector-up structure |
-
1981
- 1981-12-23 HU HU813926A patent/HU183760B/hu unknown
-
1982
- 1982-12-22 IT IT24911/82A patent/IT1153688B/it active
- 1982-12-23 JP JP83500103A patent/JPS58502175A/ja active Pending
- 1982-12-23 WO PCT/HU1982/000067 patent/WO1983002369A1/en not_active Ceased
- 1982-12-23 EP EP19830900057 patent/EP0096686A4/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT8224911A1 (it) | 1984-06-22 |
| JPS58502175A (ja) | 1983-12-15 |
| HU183760B (en) | 1984-05-28 |
| IT1153688B (it) | 1987-01-14 |
| EP0096686A4 (en) | 1985-12-11 |
| EP0096686A1 (en) | 1983-12-28 |
| WO1983002369A1 (en) | 1983-07-07 |
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