IT7869937A0 - Dispositivo semiconduttore utilizzante celle di memoria con zone di immagazzinamento della carica nella parete laterale - Google Patents
Dispositivo semiconduttore utilizzante celle di memoria con zone di immagazzinamento della carica nella parete lateraleInfo
- Publication number
- IT7869937A0 IT7869937A0 IT7869937A IT6993778A IT7869937A0 IT 7869937 A0 IT7869937 A0 IT 7869937A0 IT 7869937 A IT7869937 A IT 7869937A IT 6993778 A IT6993778 A IT 6993778A IT 7869937 A0 IT7869937 A0 IT 7869937A0
- Authority
- IT
- Italy
- Prior art keywords
- side wall
- semiconductor device
- memory cells
- charge storage
- storage areas
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86453677A | 1977-12-27 | 1977-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT7869937A0 true IT7869937A0 (it) | 1978-12-22 |
Family
ID=25343489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT7869937A IT7869937A0 (it) | 1977-12-27 | 1978-12-22 | Dispositivo semiconduttore utilizzante celle di memoria con zone di immagazzinamento della carica nella parete laterale |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5492077A (it) |
| CA (1) | CA1118892A (it) |
| DE (1) | DE2842334A1 (it) |
| FR (1) | FR2413789A1 (it) |
| GB (1) | GB2011175B (it) |
| IT (1) | IT7869937A0 (it) |
| NL (1) | NL7808079A (it) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2909820A1 (de) * | 1979-03-13 | 1980-09-18 | Siemens Ag | Halbleiterspeicher mit eintransistorzellen in v-mos-technologie |
| US4252579A (en) * | 1979-05-07 | 1981-02-24 | International Business Machines Corporation | Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition |
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| US4423490A (en) * | 1980-10-27 | 1983-12-27 | Burroughs Corporation | JFET Dynamic memory |
| JPS6135554A (ja) * | 1984-07-28 | 1986-02-20 | Nippon Telegr & Teleph Corp <Ntt> | 読出し専用メモリ−およびその製造方法 |
| US4987090A (en) * | 1987-07-02 | 1991-01-22 | Integrated Device Technology, Inc. | Static ram cell with trench pull-down transistors and buried-layer ground plate |
| US4997783A (en) * | 1987-07-02 | 1991-03-05 | Integrated Device Technology, Inc. | Static ram cell with trench pull-down transistors and buried-layer ground plate |
| US6963108B1 (en) * | 2003-10-10 | 2005-11-08 | Advanced Micro Devices, Inc. | Recessed channel |
-
1978
- 1978-07-24 CA CA000308013A patent/CA1118892A/en not_active Expired
- 1978-08-01 NL NL7808079A patent/NL7808079A/xx not_active Application Discontinuation
- 1978-08-08 GB GB7832604A patent/GB2011175B/en not_active Expired
- 1978-08-30 JP JP10618578A patent/JPS5492077A/ja active Pending
- 1978-09-28 DE DE19782842334 patent/DE2842334A1/de not_active Withdrawn
- 1978-10-11 FR FR7829050A patent/FR2413789A1/fr not_active Withdrawn
- 1978-12-22 IT IT7869937A patent/IT7869937A0/it unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2842334A1 (de) | 1979-07-05 |
| GB2011175B (en) | 1982-02-10 |
| JPS5492077A (en) | 1979-07-20 |
| FR2413789A1 (fr) | 1979-07-27 |
| CA1118892A (en) | 1982-02-23 |
| NL7808079A (nl) | 1979-06-29 |
| GB2011175A (en) | 1979-07-04 |
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