IT7819601A0 - Dispositivo semiconduttore a porta controllata, dotato di mezzi di defocalizzazione. - Google Patents

Dispositivo semiconduttore a porta controllata, dotato di mezzi di defocalizzazione.

Info

Publication number
IT7819601A0
IT7819601A0 IT7819601A IT1960178A IT7819601A0 IT 7819601 A0 IT7819601 A0 IT 7819601A0 IT 7819601 A IT7819601 A IT 7819601A IT 1960178 A IT1960178 A IT 1960178A IT 7819601 A0 IT7819601 A0 IT 7819601A0
Authority
IT
Italy
Prior art keywords
defocalization
semiconductor device
controlled gate
gate
controlled
Prior art date
Application number
IT7819601A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7819601A0 publication Critical patent/IT7819601A0/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
IT7819601A 1977-02-07 1978-01-25 Dispositivo semiconduttore a porta controllata, dotato di mezzi di defocalizzazione. IT7819601A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4943/77A GB1558840A (en) 1977-02-07 1977-02-07 Gate controlled semiconductor device

Publications (1)

Publication Number Publication Date
IT7819601A0 true IT7819601A0 (it) 1978-01-25

Family

ID=9786786

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7819601A IT7819601A0 (it) 1977-02-07 1978-01-25 Dispositivo semiconduttore a porta controllata, dotato di mezzi di defocalizzazione.

Country Status (5)

Country Link
US (1) US4561008A (it)
JP (1) JPS5397785A (it)
DE (1) DE2804443A1 (it)
GB (1) GB1558840A (it)
IT (1) IT7819601A0 (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE53895B1 (en) * 1981-11-23 1989-04-12 Gen Electric Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US5111268A (en) * 1981-12-16 1992-05-05 General Electric Company Semiconductor device with improved turn-off capability
JPS5952875A (ja) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPS5986262A (ja) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
FR2565409B1 (fr) * 1984-05-30 1986-08-22 Silicium Semiconducteur Ssc Thyristor blocable a gachette d'anode
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
US6518604B1 (en) * 2000-09-21 2003-02-11 Conexant Systems, Inc. Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure
DE102005047409A1 (de) * 2005-10-04 2007-04-12 Infineon Technologies Ag Halbleiterbauelement mit integrierter Kapazitätsstruktur

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430115A (en) * 1966-08-31 1969-02-25 Webb James E Apparatus for ballasting high frequency transistors
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
BE755356A (fr) * 1969-08-27 1971-03-01 Westinghouse Electric Corp Interrupteur a semi conducteur a grille de commande pour courant eleve
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
US3914781A (en) * 1971-04-13 1975-10-21 Sony Corp Gate controlled rectifier
JPS5222472B2 (it) * 1973-07-26 1977-06-17
US3902188A (en) * 1973-08-15 1975-08-26 Rca Corp High frequency transistor
JPS5510143B2 (it) * 1974-05-20 1980-03-14
JPS5133987A (ja) * 1974-09-18 1976-03-23 Hitachi Ltd Handotaisochi

Also Published As

Publication number Publication date
JPS5755302B2 (it) 1982-11-24
US4561008A (en) 1985-12-24
DE2804443A1 (de) 1978-08-10
JPS5397785A (en) 1978-08-26
GB1558840A (en) 1980-01-09

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