IT1403803B1 - Supporto di memorizzazione provvisto di elementi di memoria di materiale ferroelettrico e relativo metodo di programmazione - Google Patents

Supporto di memorizzazione provvisto di elementi di memoria di materiale ferroelettrico e relativo metodo di programmazione

Info

Publication number
IT1403803B1
IT1403803B1 ITTO2011A000079A ITTO20110079A IT1403803B1 IT 1403803 B1 IT1403803 B1 IT 1403803B1 IT TO2011A000079 A ITTO2011A000079 A IT TO2011A000079A IT TO20110079 A ITTO20110079 A IT TO20110079A IT 1403803 B1 IT1403803 B1 IT 1403803B1
Authority
IT
Italy
Prior art keywords
ferroelelectric
membership
support provided
programming method
memorization support
Prior art date
Application number
ITTO2011A000079A
Other languages
English (en)
Inventor
Antonio Maria Scalia
Maurizio Greco
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITTO2011A000079A priority Critical patent/IT1403803B1/it
Priority to IT000180A priority patent/ITTO20110180A1/it
Priority to US13/362,434 priority patent/US20120195094A1/en
Publication of ITTO20110079A1 publication Critical patent/ITTO20110079A1/it
Application granted granted Critical
Publication of IT1403803B1 publication Critical patent/IT1403803B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Compositions Of Oxide Ceramics (AREA)
ITTO2011A000079A 2011-02-01 2011-02-01 Supporto di memorizzazione provvisto di elementi di memoria di materiale ferroelettrico e relativo metodo di programmazione IT1403803B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITTO2011A000079A IT1403803B1 (it) 2011-02-01 2011-02-01 Supporto di memorizzazione provvisto di elementi di memoria di materiale ferroelettrico e relativo metodo di programmazione
IT000180A ITTO20110180A1 (it) 2011-02-01 2011-03-01 Supporto di memorizzazione provvisto di elementi di materiale ferroelettrico e relativo metodo di programmazione
US13/362,434 US20120195094A1 (en) 2011-02-01 2012-01-31 Memory support provided with elements of ferroelectric material and programming method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2011A000079A IT1403803B1 (it) 2011-02-01 2011-02-01 Supporto di memorizzazione provvisto di elementi di memoria di materiale ferroelettrico e relativo metodo di programmazione

Publications (2)

Publication Number Publication Date
ITTO20110079A1 ITTO20110079A1 (it) 2012-08-02
IT1403803B1 true IT1403803B1 (it) 2013-10-31

Family

ID=43976414

Family Applications (2)

Application Number Title Priority Date Filing Date
ITTO2011A000079A IT1403803B1 (it) 2011-02-01 2011-02-01 Supporto di memorizzazione provvisto di elementi di memoria di materiale ferroelettrico e relativo metodo di programmazione
IT000180A ITTO20110180A1 (it) 2011-02-01 2011-03-01 Supporto di memorizzazione provvisto di elementi di materiale ferroelettrico e relativo metodo di programmazione

Family Applications After (1)

Application Number Title Priority Date Filing Date
IT000180A ITTO20110180A1 (it) 2011-02-01 2011-03-01 Supporto di memorizzazione provvisto di elementi di materiale ferroelettrico e relativo metodo di programmazione

Country Status (2)

Country Link
US (1) US20120195094A1 (it)
IT (2) IT1403803B1 (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9281044B2 (en) 2013-05-17 2016-03-08 Micron Technology, Inc. Apparatuses having a ferroelectric field-effect transistor memory array and related method
JP2015079869A (ja) * 2013-10-17 2015-04-23 ソニー株式会社 メモリ装置、アクセス方法
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
WO2016028356A1 (en) * 2014-08-19 2016-02-25 Sabic Global Techologies B.V Non-volatile ferroelectric memory cells with multilevel operation
US10636471B2 (en) * 2016-04-20 2020-04-28 Micron Technology, Inc. Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
US10249756B2 (en) * 2016-11-29 2019-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereof
US11264073B2 (en) 2019-12-23 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Device and method for performing matrix operation
US20240064997A1 (en) * 2022-08-16 2024-02-22 International Business Machines Corporation Ferroelectric random-access memory cell

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753946A (en) * 1995-02-22 1998-05-19 Sony Corporation Ferroelectric memory
US6067244A (en) * 1997-10-14 2000-05-23 Yale University Ferroelectric dynamic random access memory
TW475267B (en) * 1999-07-13 2002-02-01 Toshiba Corp Semiconductor memory
US6411542B1 (en) * 1999-12-15 2002-06-25 Electronics And Telecommunications Research Institute Ferroelectric memory device having ferroelectric memory transistors connected to separate well lines
DE10064031A1 (de) * 2000-12-21 2002-07-18 Infineon Technologies Ag Verfahren zum Auslesen und Speichern eines Zustandes aus einem oder in einen ferroelektrischen Transistor einer Speicherzelle und Speichermatrix
JP3749851B2 (ja) * 2001-10-25 2006-03-01 株式会社東芝 強誘電体半導体メモリ
KR100449070B1 (ko) * 2001-11-23 2004-09-18 한국전자통신연구원 강유전체 메모리 셀 어레이 및 그를 이용한 데이터 저장방법
JP2003233984A (ja) * 2001-12-04 2003-08-22 Sanyo Electric Co Ltd メモリ装置
KR100529989B1 (ko) * 2003-03-07 2005-11-22 산요덴키가부시키가이샤 메모리
JP4161951B2 (ja) * 2004-09-16 2008-10-08 セイコーエプソン株式会社 強誘電体メモリ装置

Also Published As

Publication number Publication date
ITTO20110079A1 (it) 2012-08-02
ITTO20110180A1 (it) 2012-08-02
US20120195094A1 (en) 2012-08-02

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