IT1400750B1 - Memoria sram 5t per applicazioni a bassa tensione - Google Patents
Memoria sram 5t per applicazioni a bassa tensioneInfo
- Publication number
- IT1400750B1 IT1400750B1 ITMI2010A001196A ITMI20101196A IT1400750B1 IT 1400750 B1 IT1400750 B1 IT 1400750B1 IT MI2010A001196 A ITMI2010A001196 A IT MI2010A001196A IT MI20101196 A ITMI20101196 A IT MI20101196A IT 1400750 B1 IT1400750 B1 IT 1400750B1
- Authority
- IT
- Italy
- Prior art keywords
- sram
- memory
- low voltage
- voltage applications
- applications
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2010A001196A IT1400750B1 (it) | 2010-06-30 | 2010-06-30 | Memoria sram 5t per applicazioni a bassa tensione |
US13/173,272 US8537602B2 (en) | 2010-06-30 | 2011-06-30 | 5T SRAM memory for low voltage applications |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2010A001196A IT1400750B1 (it) | 2010-06-30 | 2010-06-30 | Memoria sram 5t per applicazioni a bassa tensione |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI20101196A1 ITMI20101196A1 (it) | 2011-12-31 |
IT1400750B1 true IT1400750B1 (it) | 2013-07-02 |
Family
ID=43063887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI2010A001196A IT1400750B1 (it) | 2010-06-30 | 2010-06-30 | Memoria sram 5t per applicazioni a bassa tensione |
Country Status (2)
Country | Link |
---|---|
US (1) | US8537602B2 (it) |
IT (1) | IT1400750B1 (it) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5676075B2 (ja) * | 2008-11-17 | 2015-02-25 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
IT1400749B1 (it) | 2010-06-30 | 2013-07-02 | St Microelectronics Srl | Cella sram configurabile dinamicamente per funzionamento a bassa tensione |
TWI500028B (zh) * | 2012-12-27 | 2015-09-11 | Univ Hsiuping Sci & Tech | 單埠靜態隨機存取記憶體 |
TWI490857B (zh) * | 2012-12-27 | 2015-07-01 | 修平學校財團法人修平科技大學 | 靜態隨機存取記憶體 |
TWI490868B (zh) * | 2012-12-27 | 2015-07-01 | 修平學校財團法人修平科技大學 | 5t靜態隨機存取記憶體 |
MX362045B (es) * | 2015-02-17 | 2019-01-07 | Hubbell Inc | Ensambles de carcasa con insertos de sujeción de cable e insertos de sujeción de cable para tales carcasas. |
US10515969B2 (en) * | 2016-11-17 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11962928B2 (en) | 2018-12-17 | 2024-04-16 | Meta Platforms Technologies, Llc | Programmable pixel array |
US11888002B2 (en) | 2018-12-17 | 2024-01-30 | Meta Platforms Technologies, Llc | Dynamically programmable image sensor |
US11935291B2 (en) | 2019-10-30 | 2024-03-19 | Meta Platforms Technologies, Llc | Distributed sensor system |
US11948089B2 (en) | 2019-11-07 | 2024-04-02 | Meta Platforms Technologies, Llc | Sparse image sensing and processing |
US11825228B2 (en) | 2020-05-20 | 2023-11-21 | Meta Platforms Technologies, Llc | Programmable pixel array having multiple power domains |
US11935575B1 (en) * | 2020-12-23 | 2024-03-19 | Meta Platforms Technologies, Llc | Heterogeneous memory system |
CN113971971B (zh) * | 2021-12-22 | 2022-05-20 | 中科南京智能技术研究院 | 一种带正负计算的存内计算单元、阵列及装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5943258A (en) * | 1997-12-24 | 1999-08-24 | Texas Instruments Incorporated | Memory with storage cells having SOI drive and access transistors with tied floating body connections |
US6998722B2 (en) * | 2002-07-08 | 2006-02-14 | Viciciv Technology | Semiconductor latches and SRAM devices |
US7092279B1 (en) | 2003-03-24 | 2006-08-15 | Sheppard Douglas P | Shared bit line memory device and method |
KR100706737B1 (ko) * | 2003-08-28 | 2007-04-12 | 가부시끼가이샤 르네사스 테크놀로지 | 반도체 기억 장치 및 그 제조 방법 |
JP4287768B2 (ja) | 2004-03-16 | 2009-07-01 | パナソニック株式会社 | 半導体記憶装置 |
US7176125B2 (en) * | 2004-07-23 | 2007-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a static random access memory with a buried local interconnect |
JP4822791B2 (ja) | 2005-10-04 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP2007193928A (ja) | 2005-12-19 | 2007-08-02 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
US7548365B2 (en) * | 2007-06-06 | 2009-06-16 | Texas Instruments Incorporated | Semiconductor device and method comprising a high voltage reset driver and an isolated memory array |
JP2009093702A (ja) * | 2007-10-04 | 2009-04-30 | Sony Corp | 半導体記憶装置及びその駆動方法 |
-
2010
- 2010-06-30 IT ITMI2010A001196A patent/IT1400750B1/it active
-
2011
- 2011-06-30 US US13/173,272 patent/US8537602B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8537602B2 (en) | 2013-09-17 |
ITMI20101196A1 (it) | 2011-12-31 |
US20120002459A1 (en) | 2012-01-05 |
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