IT1399907B1 - Apparato di protezione contro scariche elettrostatiche per un circuito integrato e relativo circuito integrato. - Google Patents
Apparato di protezione contro scariche elettrostatiche per un circuito integrato e relativo circuito integrato.Info
- Publication number
- IT1399907B1 IT1399907B1 ITMI2010A000725A ITMI20100725A IT1399907B1 IT 1399907 B1 IT1399907 B1 IT 1399907B1 IT MI2010A000725 A ITMI2010A000725 A IT MI2010A000725A IT MI20100725 A ITMI20100725 A IT MI20100725A IT 1399907 B1 IT1399907 B1 IT 1399907B1
- Authority
- IT
- Italy
- Prior art keywords
- integrated circuit
- protection device
- electrostatic discharge
- device against
- against electrostatic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/441—Protection of an amplifier being implemented by clamping means
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI2010A000725A IT1399907B1 (it) | 2010-04-28 | 2010-04-28 | Apparato di protezione contro scariche elettrostatiche per un circuito integrato e relativo circuito integrato. |
| US13/095,697 US8432652B2 (en) | 2010-04-28 | 2011-04-27 | Protection apparatus against electrostatic discharges for an integrated circuit and related integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI2010A000725A IT1399907B1 (it) | 2010-04-28 | 2010-04-28 | Apparato di protezione contro scariche elettrostatiche per un circuito integrato e relativo circuito integrato. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ITMI20100725A1 ITMI20100725A1 (it) | 2011-10-29 |
| IT1399907B1 true IT1399907B1 (it) | 2013-05-09 |
Family
ID=42731846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ITMI2010A000725A IT1399907B1 (it) | 2010-04-28 | 2010-04-28 | Apparato di protezione contro scariche elettrostatiche per un circuito integrato e relativo circuito integrato. |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8432652B2 (it) |
| IT (1) | IT1399907B1 (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5312849B2 (ja) * | 2008-06-06 | 2013-10-09 | ルネサスエレクトロニクス株式会社 | 集積回路 |
| TWM396476U (en) * | 2010-07-06 | 2011-01-11 | Tuton Technology Co Ltd | Transformer module with multiple protection mechanisms |
| JP6272509B2 (ja) * | 2015-01-20 | 2018-01-31 | 三菱電機株式会社 | 信号伝達装置 |
| JP2016171163A (ja) * | 2015-03-12 | 2016-09-23 | ルネサスエレクトロニクス株式会社 | 半導体集積回路、通信モジュール、及びスマートメータ |
| CN111756028B (zh) | 2019-03-29 | 2022-07-01 | 北京小米移动软件有限公司 | 电子设备 |
| US11462904B2 (en) * | 2021-01-20 | 2022-10-04 | Hangzhou Geo-Chip Technology Co., Ltd. | Apparatus for protection against electrostatic discharge and method of manufacturing the same |
| US20220416751A1 (en) * | 2021-06-24 | 2022-12-29 | Intel Corporation | Impedance matching circuit and an impedance matching element |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10214068B4 (de) * | 2002-03-28 | 2009-02-19 | Advanced Micro Devices, Inc., Sunnyvale | ESD-Schutzschaltung für Radiofrequenz-Ausgangsanschlüsse in einer integrierten Schaltung |
| US7010279B2 (en) | 2002-11-27 | 2006-03-07 | Broadcom Corporation | Radio frequency integrated circuit electro-static discharge circuit |
| US7391596B2 (en) * | 2003-12-19 | 2008-06-24 | Broadcom Corporation | High frequency integrated circuit pad configuration including ESD protection circuitry |
| US7023677B2 (en) * | 2004-02-25 | 2006-04-04 | United Microelectronics Corp. | ESD protection designs with parallel LC tank for Giga-Hertz RF integrated circuits |
| DE102006019888B4 (de) * | 2006-04-28 | 2012-10-04 | Infineon Technologies Ag | Verstärker mit ESD-Schutz |
| US20070296055A1 (en) | 2006-06-23 | 2007-12-27 | Albert Kuo Huei Yen | Rf integrated circuit with esd protection and esd protection apparatus thereof |
| US8276570B2 (en) * | 2009-03-17 | 2012-10-02 | Raytheon Company | Method and apparatus for improved internal combustion of fuel/oxidizer mixtures by nanostructure injection and electromagnetic pulse ignition |
-
2010
- 2010-04-28 IT ITMI2010A000725A patent/IT1399907B1/it active
-
2011
- 2011-04-27 US US13/095,697 patent/US8432652B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI20100725A1 (it) | 2011-10-29 |
| US20110267725A1 (en) | 2011-11-03 |
| US8432652B2 (en) | 2013-04-30 |
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