IT1232299B - Tiristore del tipo gate turn-off a condizione inversa - Google Patents

Tiristore del tipo gate turn-off a condizione inversa

Info

Publication number
IT1232299B
IT1232299B IT8967792A IT6779289A IT1232299B IT 1232299 B IT1232299 B IT 1232299B IT 8967792 A IT8967792 A IT 8967792A IT 6779289 A IT6779289 A IT 6779289A IT 1232299 B IT1232299 B IT 1232299B
Authority
IT
Italy
Prior art keywords
thyristor
reverse
gate turn
condition gate
condition
Prior art date
Application number
IT8967792A
Other languages
English (en)
Other versions
IT8967792A0 (it
Inventor
Futoshi Tokunoh
Katsumi Sato
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of IT8967792A0 publication Critical patent/IT8967792A0/it
Application granted granted Critical
Publication of IT1232299B publication Critical patent/IT1232299B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
IT8967792A 1989-01-31 1989-09-26 Tiristore del tipo gate turn-off a condizione inversa IT1232299B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1021673A JPH02202061A (ja) 1989-01-31 1989-01-31 逆導通ゲートターンオフサイリスタ

Publications (2)

Publication Number Publication Date
IT8967792A0 IT8967792A0 (it) 1989-09-26
IT1232299B true IT1232299B (it) 1992-01-28

Family

ID=12061569

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8967792A IT1232299B (it) 1989-01-31 1989-09-26 Tiristore del tipo gate turn-off a condizione inversa

Country Status (4)

Country Link
US (1) US5047824A (it)
JP (1) JPH02202061A (it)
DE (1) DE4002040A1 (it)
IT (1) IT1232299B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JPH05152564A (ja) * 1991-12-02 1993-06-18 Mitsubishi Electric Corp 逆導通ゲートターンオフサイリスタおよびその製造方法
US5835985A (en) * 1993-09-14 1998-11-10 Kabushiki Kaisha Toshiba Reverse conducting gate-turnoff thyristor
EP0863553B1 (en) * 1996-09-24 2003-02-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and production method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
DE3542570A1 (de) * 1985-12-02 1987-06-04 Siemens Ag Gate-turnoff-thyristor mit integrierter antiparalleler diode
JPS6287457A (ja) * 1986-09-19 1987-04-21 河原工業株式会社 火山灰を主成分とした建築材料の製造方法

Also Published As

Publication number Publication date
IT8967792A0 (it) 1989-09-26
JPH02202061A (ja) 1990-08-10
DE4002040A1 (de) 1990-08-02
US5047824A (en) 1991-09-10

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929