IT1230849B - Metodo per drogare una fusione e cristalli accresciuti da essa. - Google Patents

Metodo per drogare una fusione e cristalli accresciuti da essa.

Info

Publication number
IT1230849B
IT1230849B IT8920592A IT2059289A IT1230849B IT 1230849 B IT1230849 B IT 1230849B IT 8920592 A IT8920592 A IT 8920592A IT 2059289 A IT2059289 A IT 2059289A IT 1230849 B IT1230849 B IT 1230849B
Authority
IT
Italy
Prior art keywords
drugging
melt
crystals increased
crystals
increased
Prior art date
Application number
IT8920592A
Other languages
English (en)
Other versions
IT8920592A0 (it
Inventor
Robert Bruce Campbell
Edgar Leonard Kochka
Paul Anthony Piotrowski
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IT8920592A0 publication Critical patent/IT8920592A0/it
Application granted granted Critical
Publication of IT1230849B publication Critical patent/IT1230849B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
IT8920592A 1988-06-02 1989-05-22 Metodo per drogare una fusione e cristalli accresciuti da essa. IT1230849B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/201,228 US4927489A (en) 1988-06-02 1988-06-02 Method for doping a melt

Publications (2)

Publication Number Publication Date
IT8920592A0 IT8920592A0 (it) 1989-05-22
IT1230849B true IT1230849B (it) 1991-11-08

Family

ID=22745006

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8920592A IT1230849B (it) 1988-06-02 1989-05-22 Metodo per drogare una fusione e cristalli accresciuti da essa.

Country Status (6)

Country Link
US (1) US4927489A (it)
JP (1) JP2727227B2 (it)
KR (1) KR0125794B1 (it)
AU (1) AU621112B2 (it)
FR (1) FR2633313B1 (it)
IT (1) IT1230849B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013872A (en) * 1997-04-25 2000-01-11 Bayer Ag Directionally solidified, multicrystalline silicon, a process for the production thereof and its use, and solar cells containing this silicon and a process for the production thereof
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
US7780052B2 (en) * 2006-05-18 2010-08-24 Curt G. Joa, Inc. Trim removal system
US8968467B2 (en) * 2007-06-27 2015-03-03 Silicor Materials Inc. Method and system for controlling resistivity in ingots made of compensated feedstock silicon
CN117702268A (zh) * 2023-02-23 2024-03-15 隆基绿能科技股份有限公司 一种单晶硅棒及其制得的硅片、电池和电池组件
CN118507556A (zh) * 2023-09-27 2024-08-16 隆基绿能科技股份有限公司 一种硅片、太阳能电池及组件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL262176A (it) * 1960-03-11 1900-01-01
FR1531730A (fr) * 1966-06-13 1968-07-05 Siemens Ag Procédé pour préparer des tiges de silicium monocristallines
DE2639563A1 (de) * 1976-09-02 1978-03-09 Wacker Chemitronic Verfahren zur herstellung von tiegelgezogenen siliciumstaeben mit gehalt an leichtfluechtigen dotierstoffen, insbesondere antimon, innerhalb enger widerstandstoleranzen
DE3049376A1 (de) * 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze

Also Published As

Publication number Publication date
KR0125794B1 (ko) 1997-12-18
AU621112B2 (en) 1992-03-05
JPH0244093A (ja) 1990-02-14
JP2727227B2 (ja) 1998-03-11
US4927489A (en) 1990-05-22
AU3500489A (en) 1989-12-07
IT8920592A0 (it) 1989-05-22
KR900000986A (ko) 1990-01-31
FR2633313B1 (fr) 1997-05-30
FR2633313A1 (fr) 1989-12-29

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970528