IT1186670B - Perfezionamento nelle cellule di memoria con capacita' di memorizzazione di piu' di due livelli di tensione - Google Patents

Perfezionamento nelle cellule di memoria con capacita' di memorizzazione di piu' di due livelli di tensione

Info

Publication number
IT1186670B
IT1186670B IT47842/82A IT4784282A IT1186670B IT 1186670 B IT1186670 B IT 1186670B IT 47842/82 A IT47842/82 A IT 47842/82A IT 4784282 A IT4784282 A IT 4784282A IT 1186670 B IT1186670 B IT 1186670B
Authority
IT
Italy
Prior art keywords
improvement
memory cells
storage capacity
voltage levels
levels
Prior art date
Application number
IT47842/82A
Other languages
English (en)
Italian (it)
Other versions
IT8247842A0 (it
Inventor
Richard Henry Adlhoch
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of IT8247842A0 publication Critical patent/IT8247842A0/it
Application granted granted Critical
Publication of IT1186670B publication Critical patent/IT1186670B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
IT47842/82A 1981-02-25 1982-02-22 Perfezionamento nelle cellule di memoria con capacita' di memorizzazione di piu' di due livelli di tensione IT1186670B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23818381A 1981-02-25 1981-02-25

Publications (2)

Publication Number Publication Date
IT8247842A0 IT8247842A0 (it) 1982-02-22
IT1186670B true IT1186670B (it) 1987-12-04

Family

ID=22896827

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47842/82A IT1186670B (it) 1981-02-25 1982-02-22 Perfezionamento nelle cellule di memoria con capacita' di memorizzazione di piu' di due livelli di tensione

Country Status (3)

Country Link
EP (1) EP0072846A1 (fr)
IT (1) IT1186670B (fr)
WO (1) WO1982002977A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122688A (en) * 1988-07-29 1992-06-16 International Business Machines Corporation Trinary check trit generator, latch, comparator and multiplexer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151603A (en) * 1977-10-31 1979-04-24 International Business Machines Corporation Precharged FET ROS array
JPS54161853A (en) * 1978-06-12 1979-12-21 Seiko Epson Corp Read-only memory
US4192014A (en) * 1978-11-20 1980-03-04 Ncr Corporation ROM memory cell with 2n FET channel widths
US4272830A (en) * 1978-12-22 1981-06-09 Motorola, Inc. ROM Storage location having more than two states
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays

Also Published As

Publication number Publication date
WO1982002977A1 (fr) 1982-09-02
IT8247842A0 (it) 1982-02-22
EP0072846A1 (fr) 1983-03-02

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